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Time domain analyses of trapping effects of AlInN/GaN HEMT devices

 Christophe Gaquière , D. Ducatteau , D. Theron , F Medjdoub , M.A. Poisson
International Microwave Symposium, IMS 2009, Workshop WWC : Advanced Measurement Techniques, Adapted for Different Memory Effects, 2009, Boston, MA, United States
Communication dans un congrès hal-00575423v1

Characterization of InxGa1-xN/GaN MQWs heterostructures for solar cells applications

 Ezgi Dogmus , Ludovic Largeau , Natalie Rolland , F Medjdoub
17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p
Communication dans un congrès hal-01018409v1
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Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

 F Medjdoub , Malek Zegaoui , N. Rolland , Paul-Alain Rolland
Applied Physics Letters, 2011, 98 (22), pp.223502-1-3. ⟨10.1063/1.3595943⟩
Article dans une revue hal-00603008v1

SiN/AlN/GaN : a promising heterostructure for millimeter wave applications

 F Medjdoub , Malek Zegaoui , N. Rolland , Paul-Alain Rolland
35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, May 2011, Catania, Italy. pp.39-40
Communication dans un congrès hal-00603112v1

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation

 Carlo de Santi , Matteo Meneghini , Alessandro Caria , Ezgi Dogmus , Malek Zegaoui , et al.
Microelectronics Reliability, 2017, 76-77, pp.575-578. ⟨10.1016/j.microrel.2017.06.072⟩
Article dans une revue hal-03028379v1

Highly stable low noise/high power AlN/GaN-on-silicon double heterostructure HEMTs operating at 40 GHz

 F Medjdoub , Y. Tagro , B. Grimbert , D. Ducatteau , N. Rolland , et al.
IEEE International Reliability Physics Symposium, IRPS 2013, 2013, Monterey, CA, United States. paper 3C.3, 6 p., ⟨10.1109/IRPS.2013.6531985⟩
Communication dans un congrès hal-00877718v1

Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates

 F Medjdoub , F. Dessenne , Jean-Luc Thobel , M. Zaknoune , D. Theron
Solid-State Electronics, 2004, 48 (5), pp.683-688. ⟨10.1016/j.sse.2003.09.011⟩
Article dans une revue istex hal-00133956v1

HEMT technology for power applications at 94 GHz and above

 F Medjdoub , M. Zaknoune , X. Wallart , F. Dessenne , Jean-Claude de Jaeger , et al.
12th European Workshop on Heterostructure Technology, heTech 2003, 2003, San Rafael, Spain
Communication dans un congrès hal-00146695v1

HEMTs with InP and InAsP channel for 94 GHz applications

 D. Theron , F Medjdoub , M. Zaknoune , Christophe Gaquière , X. Wallart
14th European Workshop on Heterostructure Technology, HeTech'05, 2005, Smolenice, Slovakia
Communication dans un congrès hal-00126469v1
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Comparison of Sub-Micron thick AlGaN/GaN and AlN/GaN HEMTs on Silicon for RF applications

 Elodie Carneiro , Stéphanie Rennesson , Fabrice Semond , F Medjdoub
46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023), May 2023, Palerme (Italie), Italy
Communication dans un congrès hal-04438164v1
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Assessment of Large Critical Electric Field in Ultra-wide Bandgap p- type Spinel ZnGa2O4

 Zeyu Chi , Tamar Tchelidze , Corinne Sartel , Tsotne Gamsakhurdashvili , Ismail Madaci , et al.
Journal of Physics D: Applied Physics, 2023, 56 (10), pp.105102. ⟨10.1088/1361-6463/acbb14⟩
Article dans une revue hal-03997451v1

Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field

 S Venkatachalam , Kathia Harrouche , François Grandpierron , Stefan Degroote , Marianne Germain , et al.
International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany
Communication dans un congrès hal-03829010v1
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Editorial for the special issue on wide bandgap based devices: design, fabrication and applications

 F Medjdoub
Micromachines, 12 (1), 2021, Wide bandgap based devices: design, fabrication and applications, ⟨10.3390/mi12010083⟩
N°spécial de revue/special issue hal-03111514v1

Carrier generation and recombination dynamics and reliability of InGaN-based photodetectors for high power densities

 C de Santi , M Meneghini , A Caria , Ezgi Dogmus , Malek Zegaoui , et al.
12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France
Communication dans un congrès hal-03298878v1

Characterization of InxGa1-xN/GaN heterostructures for x~0.30 and x~0.55 by XRD and TEM methods

 I. Dogmus , A. Addad , C. Lethien , P. Roussel , El Hadj Dogheche , et al.
3èmes Journées Nationales sur la Récupération et le Stockage d'Energie pour l'Alimentation des Microsystèmes Autonomes, JNRSE 2013, 2013, Toulouse, France. 2 p
Communication dans un congrès hal-00878378v1

[Seminar] Status and progress of GaN-based high electron mobility transistors for millimetre-wave power applications

 Farid Medjdoub
Workshop on Electrical and thermal characterization of HEMT, Jointly Organized by IEEE EDS Delhi Chapter (New Delhi, India), september 26, 2023
Autre publication scientifique hal-04218271v1

Barrier layer downscaling of InAlN/GaN HEMTs

 F Medjdoub , J.F. Carlin , M. Gonschorek , E. Feltin , M.A. Py , et al.
65th Annual Device Research Conference, DRC 2007, 2007, United States. pp.109-110, ⟨10.1109/DRC.2007.4373673⟩
Communication dans un congrès hal-00284407v1
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Barrier layer scaling of InAlN/GaN HEMTs

 F Medjdoub , M Alomari , J.-F Carlin , M Gonschorek , E Feltin , et al.
IEEE Electron Device Letters, 2008
Article dans une revue hal-03281203v1
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High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

 F Medjdoub , Riad Kabouche , Ezgi Dogmus , Astrid Linge , Malek Zegaoui
Electronics, 2016, 5 (1), pp.12. ⟨10.3390/electronics5010012⟩
Article dans une revue hal-03028337v1
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Above 70% PAE in Q-band with AlN/GaN HEMTs structures

 Kathia Harrouche , Riad Kabouche , Etienne Okada , F Medjdoub
WOCSDICE2021, Jun 2021, Bristol, United Kingdom
Communication dans un congrès hal-03279173v1
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Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs

 Zhan Gao , Matteo Meneghini , Kathia Harrouche , Riad Kabouche , Francesca Chiocchetta , et al.
Microelectronics Reliability, 2021, 123, pp.114199. ⟨10.1016/j.microrel.2021.114199⟩
Article dans une revue hal-03287632v1
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Epi-design optimization in AlN/GaN HEMTs for superior drain bias operation and reduced trapping effects

 Kathia Harrouche , Lyes Ben-Hammou , François Grandpierron , Ajay Shanbhag , Etienne Okada , et al.
14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan
Communication dans un congrès hal-04436421v1

[Invited] Design and fabrication of GaN power devices

 F Medjdoub
IEEE 52nd European Solid-State Device Research Conference, Sep 2022, Milan, Italy
Communication dans un congrès hal-03828862v1
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High Al-content AlGaN channel high electron mobility transistors on silicon substrate

 Jash Mehta , Idriss Abid , Julien Bassaler , Julien Pernot , Philippe Ferrandis , et al.
e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2023, 3, pp.100114. ⟨10.1016/j.prime.2023.100114⟩
Article dans une revue hal-03952273v1
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GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

 Ezgi Dogmus , Malek Zegaoui , F Medjdoub
Applied Physics Express, 2018, 11 (3), pp.034102. ⟨10.7567/APEX.11.034102⟩
Article dans une revue hal-02356739v1
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Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors

 Alessandro Caria , Carlo de Santi , Ezgi Dogmus , F Medjdoub , Enrico Zanoni , et al.
Electronics, 2020, 9 (11), pp.1840. ⟨10.3390/electronics9111840⟩
Article dans une revue hal-03028077v1
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C-doped AlN/GaN HEMTs for High efficiency mmW applications

 Romain Pécheux , Riad Kabouche , Etienne Okada , Malek Zegaoui , F Medjdoub
International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2018), Jul 2018, Brive La Gaillarde, France. pp.1-3, ⟨10.1109/INMMIC.2018.8430021⟩
Communication dans un congrès hal-02356756v1
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High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

 Riad Kabouche , Romain Pecheux , Kathia Harrouche , Etienne Okada , F Medjdoub , et al.
International Journal of High Speed Electronics and Systems, 2019, 28 (01n02), pp.1940003. ⟨10.1142/S0129156419400032⟩
Article dans une revue hal-02356733v1
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Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

 Mehdi Rzin , Matteo Meneghini , Fabiana Rampazzo , Veronica Gao Zhan , Carlo de Santi , et al.
30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France
Communication dans un congrès hal-03048726v1
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Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

 M. Rzin , B. Guillet , Laurence Méchin , P. Gamarra , C. Lacam , et al.
IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩
Article dans une revue hal-02382779v1
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