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Optical properties of GaN nanowires grown on chemical vapor deposited-graphene
L. Mancini
,
M Morassi
,
C. Sinito
,
O Brandt
,
L. Geelhaar
,
et al.
Article dans une revue
hal-02349609v1
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Growth and characterization of Au catalyzed SiGe NW and alternatives metals catalyzed Si NW
A. Potié
,
T. Baron
,
F. Oehler
,
P. Gentile
,
G. Rosaz
,
et al.
EMRS, Sep 2010, Varsovie, Poland
Communication dans un congrès
hal-00649924v1
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Microstructure of GaAs thin films grown on glass using Ge seed layers fabricated by aluminium induced crystallization
D. Pelati
,
G. Patriarche
,
L. Largeau
,
O. Mauguin
,
L. Travers
,
et al.
Article dans une revue
hal-02404458v1
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Quantum confinement effects and strain-induced band-gap energy shifts in core-shell Si-SiO2 nanowires
O. Demichel
,
V. Calvo
,
P. Noe
,
B. Salem
,
Pier-Francesco Fazzini
,
et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (24), pp.245443
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hal-00641304v1
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In situ Chlorine Passivation of P and N type doped Silicon nanowires
P. Gentile
,
F. Oehler
,
N. Pauc
,
A. Solanki
,
V. Calvo
,
et al.
5th Nanowire Growth Workshop (NWG 2010), Nov 2010, Rome, Italy
Communication dans un congrès
hal-00650225v1
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Electrical characterization of silicon and silicon-germanium nanowires Field effect transistors
B. Salem
,
G. Rosaz
,
A. Potié
,
N. Pauc
,
F. Oehler
,
et al.
MRS Fall meeting 2010-Oral Symposium Y: Nanomaterials Integration for Electronics, Energy, and Sensing, Nov 2010, Boston, United States
Communication dans un congrès
hal-00650197v1
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Quantitative Assessment of Carrier Density by Cathodoluminescence (2): GaAs nanowires
Hung-Ling Chen
,
Romaric de Lépinau
,
Andrea Scaccabarozzi
,
Fabrice Oehler
,
Jean-Christophe Harmand
,
et al.
2019
Pré-publication, Document de travail
hal-02411467v1
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Effect of HCl on the doping and shape control of silicon nanowires
P. Gentile
,
A. Solanki
,
N. Pauc
,
F. Oehler
,
B. Salem
,
et al.
Article dans une revue
hal-00762136v1
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Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )
Hugo Henck
,
Zeineb Ben Aziza
,
Olivia Zill
,
Debora Pierucci
,
Carl H. Naylor
,
et al.
Article dans une revue
hal-01668118v1
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Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy
Debora Pierucci
,
Aymen Mahmoudi
,
Mathieu Silly
,
Federico Bisti
,
Fabrice Oehler
,
et al.
Article dans une revue
hal-03674688v1
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Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications
Omar Saket
,
Chalermchai Himwas
,
Valerio Piazza
,
Fabien Bayle
,
Andrea Cattoni
,
et al.
Article dans une revue
hal-02992090v1
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Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
Martina Morassi
,
Ludovic Largeau
,
Fabrice Oehler
,
Hyun-Gyu Song
,
Laurent Travers
,
et al.
Article dans une revue
hal-02385645v1
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Growth of SiGe NW Using Gold and Alternative Metal Catalysts
A. Potie
,
T. Baron
,
G. Rosaz
,
B. Salem
,
L. Latu-Romain
,
et al.
MRS Spring meeting, Apr 2011, San Francisco, United States
Communication dans un congrès
hal-00650029v1
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Quantitative Assessment of Carrier Density by Cathodoluminescence. II. Ga As Nanowires
Hung-Ling Chen
,
Romaric de Lépinau
,
Andrea Scaccabarozzi
,
Fabrice Oehler
,
Jean-Christophe Harmand
,
et al.
Article dans une revue
hal-03435524v1
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Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride
Meryem Bouaziz
,
Aymen Mahmoudi
,
Geoffroy Kremer
,
Julien Chaste
,
César González
,
et al.
Article dans une revue
hal-04190986v2
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Recombination Dynamics of Spatially Confined Electron−Hole System in Luminescent Gold Catalyzed Silicon Nanowires
O. Demichel
,
V. Calvo
,
N. Pauc
,
A. Besson
,
P. Noé
,
et al.
Article dans une revue
hal-02060170v1
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The morphology of silicon nanowires grown in the presence of trimethylaluminium
F. Oehler
,
P. Gentile
,
T. Baron
,
M. den Hertog
,
J.L. Rouviere
,
et al.
Nanotechnology, 2009, pp.20 (24): Art. No. 245602 JUN 17 2009
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hal-00455406v1
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Measuring and Modeling the Growth Dynamics of Self-Catalyzed GaP Nanowire Arrays
Fabrice Oehler
,
Andrea Cattoni
,
Andrea Scaccabarozzi
,
Gilles Patriarche
,
Frank Glas
,
et al.
Article dans une revue
hal-02413855v1
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Quantitative Assessment of Carrier Density by Cathodoluminescence (1): GaAs thin films and modeling
Hung-Ling Chen
,
Andrea Scaccabarozzi
,
Romaric de Lépinau
,
Fabrice Oehler
,
Aristide Lemaître
,
et al.
2019
Pré-publication, Document de travail
hal-02411466v1
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Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition
Olivier Demichel
,
Fabrice Oehler
,
Vincent Calvo
,
Pierre Noé
,
Nicolas Pauc
,
et al.
Article dans une revue
istex
hal-00455408v1
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Direct growth of III-V nanowire-based top cell for tandem on Silicon
Romaric de Lépinau
,
Capucine Tong
,
Andrea Scaccabarozzi
,
Fabrice Oehler
,
Hung-Ling Chen
,
et al.
Communication dans un congrès
hal-03328688v1
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Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys
Cyrine Ernandes
,
Lama Khalil
,
Hela Almabrouk
,
Debora Pierucci
,
Biyuan Zheng
,
et al.
Article dans une revue
hal-03450806v1
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Multi-order phononic frequency comb generation within a MoS2 electromechanical resonator
Anis Chiout
,
Franck Correia
,
Meng-Qiang Zhao
,
A T Charlie Johnson
,
Debora Pierucci
,
et al.
Article dans une revue
hal-03865090v1
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Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3
Geoffroy Kremer
,
Aymen Mahmoudi
,
A. M'Foukh
,
Meryem Bouaziz
,
Mehrdad Rahimi
,
et al.
Article dans une revue
hal-04179830v1
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Controlled growth of branched nanowires using trimethylaluminium and silane as CVD gas Precursors
F. Oehler
,
P. Gentile
,
T. Baron
,
M. den Hertog
,
P. Ferret
E-MRS 2008, 2008, BOSTON, United States
Communication dans un congrès
hal-00396834v1
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Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence
Hung-Ling Chen
,
Chalermchai Himwas
,
Andrea Scaccabarozzi
,
Pierre Râle
,
Fabrice Oehler
,
et al.
Article dans une revue
hal-01972834v1
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Unidirectional Rashba Spin Splitting in Single Layer WS2(1-x)Se2x alloy
Jihene Zribi
,
Debora Pierucci
,
Federico Bisti
,
Biyuan Zheng
,
José Avila
,
et al.
Article dans une revue
hal-04265051v1
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Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer
Cyrine Ernandes
,
Lama Khalil
,
Hugo Henck
,
Meng-Qiang Zhao
,
Julien Chaste
,
et al.
Article dans une revue
hal-03450796v1
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Evidence and control of unintentional As-rich shells in GaAs 1– x P x nanowires
Romaric de Lépinau
,
Andrea Scaccabarozzi
,
Gilles Patriarche
,
Laurent Travers
,
Stéphane Collin
,
et al.
Article dans une revue
hal-02351891v1
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GaAs/GaInP nanowire solar cell on Si with state-of-the-art V oc and quasi-Fermi level splitting
Capucine Tong
,
Amaury Delamarre
,
Romaric de Lépinau
,
Andrea Scaccabarozzi
,
Fabrice Oehler
,
et al.
Article dans une revue
hal-03815027v1
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