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Correlated and in-situ electrical transmission electron microscopy studies and related membrane fabrication
Maria Spies
,
Zahra Sadre-Momtaz
,
Jonas Lähnemann
,
Minh Anh Luong
,
Bruno Fernandez
,
et al.
Article dans une revue
hal-02464411v1
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Correlated Structural, Electronic, and Optical Properties of AlN/GaN Multiple Quantum Disks in GaN nanowires
A. M. Fischer
,
K.W. Sun
,
F. Ponce
,
Rudeesun Songmuang
,
E. Monroy
Article dans une revue
hal-01003146v1
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Ge doping of GaN beyond the Mott transition
A. Ajay
,
J Schörmann
,
M Jiménez-Rodriguez
,
C Lim
,
F Walther
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et al.
Article dans une revue
hal-01638851v1
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Investigation of doping in III-nitrides by combining atom probe tomography and EDX spectroscopy
C. Bougerol
,
L. Amichi
,
Amelie Dussaigne
,
Adeline Grenier
,
P.H. Jouneau
,
et al.
SSDM 2019 - 2019 International Conference on Solid State Devices and Materials, Sep 2019, Nagoya, Japan. ⟨10.7567/SSDM.2019.F-2-01⟩
Communication dans un congrès
hal-03995684v1
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Room-temperature photodetection dynamics of single GaN nanowires
F. González-Posada
,
R. Songmuang
,
M. den Hertog
,
E. Monroy
Article dans une revue
hal-01021351v1
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Single GaN-based Nanowires for Photodetection and Sensing Applications
Martien den Hertog
,
Rudeesun Songmuang
,
F. Gonzalez-Posada
,
Eva Monroy
Article dans une revue
hal-00985849v1
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Transferrable dielectric DBR membranes for versatile GaN-based polariton and VCSEL technology
E.A. Amargianitakis
,
S.A. Kazazis
,
G. Doundoulakis
,
G. Stavrinidis
,
G. Konstantinidis
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et al.
Article dans une revue
hal-03116860v1
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Improved GaN Quantum Well Microcavities for Robust Room Temperature Polaritonics
Emmanouil Amargianitakis
,
Foteini Miziou
,
Maria Androulidaki
,
Katerina Tsagaraki
,
Athanasios Kostopoulos
,
et al.
Article dans une revue
hal-02166587v1
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Inversion of the Internal Electric Field due to Inhomogeneous Incorporation of Ge Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography
Lou Denaix
,
Florian Castioni
,
Matthew Bryan
,
David Cooper
,
Eva Monroy
Article dans une revue
hal-03989809v1
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Multi-excitonic emission from Stranski-Krastanov GaN/AlN quantum dots inside a nanoscale tip
L. Mancini
,
F. Moyon
,
Jonathan Houard
,
Ivan Blum
,
Williams Lefebvre
,
et al.
Article dans une revue
hal-01766091v1
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Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements
K. Sobczak
,
J. Borysiuk
,
P. Strąk
,
R. Jakieła
,
K. Koroński
,
et al.
Article dans une revue
hal-03118767v1
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High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models
Nataliya Frenkel
,
Jens Wallys
,
Sara Lippert
,
Jörg Teubert
,
Stefan Kaufmann
,
et al.
Article dans une revue
istex
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Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells
Luca Redaelli
,
Anna Mukhtarova
,
Akhil Ajay
,
Arantzazu Nunez-Cascajero
,
Sirona Valdueza-Felip
,
et al.
Article dans une revue
hal-01616166v1
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Ultrafast Fiber Laser Using InN as Saturable Absorber Mirror
Marco Jimenez-Rodriguez
,
Eva Monroy
,
Miguel Gonzalez-Herraez
,
Fernando Naranjo
Article dans une revue
hal-02165979v1
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III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm
Laura Monteagudo-Lerma
,
Fernando Naranjo
,
Sirona Valdueza-Felip
,
Marco Jiménez-Rodríguez
,
Eva Monroy
,
et al.
Article dans une revue
hal-02166039v1
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Improvement of the critical temperature of NbTiN films on III-nitride substrates
Houssaine Machhadani
,
Julien Zichi
,
Catherine Bougerol
,
Stéphane Lequien
,
Jean-Luc Thomassin
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et al.
Article dans une revue
hal-02013303v1
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Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 155µm
L. Monroy
,
M. Jiménez-Rodríguez
,
P. Ruterana
,
E. Monroy
,
M. Gonzalez-Herraez
,
et al.
Article dans une revue
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Effect of Bias on the Response of GaN Axial p–n Junction Single-Nanowire Photodetectors
Sergi Cuesta
,
M. Spies
,
V. Boureau
,
F. Donatini
,
Moïra Hocevar
,
et al.
Article dans une revue
hal-02326742v1
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Wide-bandgap semiconductor ultraviolet detectors (Topical Review)
Eva Monroy
,
Franck Omnès
,
Fernando Calle
Semiconductor Science and Technology, 2003, 18, pp.R33
Article dans une revue
hal-00781376v1
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Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors
S. Joglekar
,
M. Azize
,
M. Beeler
,
E. Monroy
,
T. Palacios
Article dans une revue
hal-02165980v1
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Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
Maria Spies
,
Martien I. den Hertog
,
Pascal Hille
,
Jörg Schörmann
,
Jakub Polaczyński
,
et al.
Article dans une revue
hal-01638719v1
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Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission
C. Himwas
,
M. den Hertog
,
Le Si Dang
,
E. Monroy
,
R. Songmuang
Article dans une revue
hal-01431035v1
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Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures
Jan Müssener
,
Pascal Hille
,
Tim Grieb
,
Jörg Schörmann
,
Jörg Teubert
,
et al.
Article dans une revue
hal-02166045v1
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Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micro-pillars
Jonas Lähnemann
,
David Browne
,
Akhil Ajay
,
Mathieu Jeannin
,
Angela Vasanelli
,
et al.
Article dans une revue
hal-02064215v1
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Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration
S. Valdueza-Felip
,
A. Mukhtarova
,
Louis Grenet
,
Catherine Bougerol
,
C. Durand
,
et al.
Article dans une revue
hal-00945851v1
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Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design
M. Beeler
,
Catherine Bougerol
,
Edith Bellet-Amalric
,
Eva Monroy
Article dans une revue
hal-00855805v1
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Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography
Martien den Hertog
,
Rudeesun Songmuang
,
Eva Monroy
Article dans une revue
hal-00976862v1
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Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources
Ioanna Dimkou
,
A Harikumar
,
F. Donatini
,
J. Lähnemann
,
M. den Hertog
,
et al.
Article dans une revue
hal-02869555v1
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UV Emission from GaN Wires with m -Plane Core–Shell GaN/AlGaN Multiple Quantum Wells
Vincent Grenier
,
Sylvain Finot
,
Gwenolé Jacopin
,
Catherine Bougerol
,
Nicolas Mollard
,
et al.
Article dans une revue
cea-02963131v1
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Homogeneous linewidth of the intraband transition at 1.55µm in GaN/AlN quantum dots.
Dac Trung Nguyen
,
Wolf Wuester
,
Philippe Roussignol
,
Christophe Voisin
,
Guillaume Cassabois
,
et al.
30th International Conference on the Physics of Semiconductors (ICPS 2010), Jul 2010, Seoul, South Korea
Communication dans un congrès
hal-00517737v1
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