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8 résultats
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Investigation of co-evaporated polycrystalline Cu(In,Ga)S 2 thin film yielding 16.0 % efficiency solar cellEPJ Photovoltaics, 2022, Special Issue on ‘Recent Advances in Spectroscopy and Microscopy of Thin-films Materials, Interfaces, and Solar Cells 2021', 13, pp.17. ⟨10.1051/epjpv/2022014⟩
Article dans une revue
hal-03754061v1
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Unveiling the role of copper content in the crystal structure and phase stability of epitaxial Cu(In,Ga)S2 films on GaP/Si(001)Materials Science in Semiconductor Processing, 2023, 166, pp.107685. ⟨10.1016/j.mssp.2023.107685⟩
Article dans une revue
hal-04186997v1
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ANR EPCIS: first results on High-Efficiency Epitaxial CIGSu on Silicon Tandem Solar Cell12è Journées Nationales du PhotoVoltaïque (JNPV 2022), Nov 2022, Dourdan, France
Communication dans un congrès
hal-03968258v1
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Epitaxial growth of Cu(In,Ga)S2 thin films on GaP/Si(001) pseudo-substrate: towards Cu(In,Ga)S2/Si tandem solar cells12è Journées Nationales du PhotoVoltaïque (JNPV 2022), Nov 2022, Dourdan, France
Communication dans un congrès
hal-03968298v1
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Towards high-efficiency and low-cost epitaxial CIGSu/Si tandem solar cellsProceedings of SPIE, the International Society for Optical Engineering, PC12002, SPIE, pp.PC120020Q, 2022, Oxide-based Materials and Devices XIII, ⟨10.1117/12.2619151⟩
Proceedings/Recueil des communications
hal-03967808v1
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Epitaxial growth of CIGSe layers on GaP/Si(001) pseudo-substrate for tandem CIGSe/Si solar cellsSolar Energy Materials and Solar Cells, 2021, 233, pp.111385. ⟨10.1016/j.solmat.2021.111385⟩
Article dans une revue
hal-03361009v1
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Evidence of cationic antiphase disorder in epitaxial Cu(In,Ga)S2 grown on GaP/Si(001)physica status solidi (RRL) - Rapid Research Letters, 2024, Physica Status Solidi (rrl) Rapid Research Letters, ⟨10.1002/pssr.202300485⟩
Article dans une revue
hal-04505810v1
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CIGS growth on a GaP/Si(001) platform: towards CIGS/Si tandem solar cellsSPIE Photonics West - OPTO 2021, Mar 2021, Online Only, United States. pp.1168721, ⟨10.1117/12.2591986⟩
Communication dans un congrès
hal-03392186v1
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