Etienne Talbot
4
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- 0000-0001-6389-1670
- IdRef : 124080154
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Hyperdoped Si nanocrystals embedded in silica for infrared plasmonicsNanoscale, 2023, 15 (16), pp.7438-7449. ⟨10.1039/D3NR00035D⟩
Article dans une revue
hal-04088288v2
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Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regimeNanophotonics, 2022, 2022, pp.0283. ⟨10.1515/nanoph-2022-0283⟩
Article dans une revue
hal-03737737v1
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Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/GermaniumThin Solid Films, 2010, 518 (9), pp.2338 - 2341. ⟨10.1016/j.tsf.2009.09.172⟩
Article dans une revue
hal-01633467v1
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Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser2023 E-MRS Spring Meeting, May 2023, Strasbourg, France
Communication dans un congrès
hal-04442327v1
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