Recherche - Archive ouverte HAL

77 résultats

	Pour les 77 documents Envoyer sur ORCID RSS ATOM Exporter BibTeX XML-TEI CSV RTF EndNote PDF HTML Export avancé	Page : Page précédente 1 2 3 Page suivante	triés par Pertinence Auteur A→Z Auteur Z→A Titre A→Z Titre Z→A Date de publication croissante Date de publication décroissante Date de dépôt croissante Date de dépôt décroissante

		Design of tunable power detector towards 5G applications Issa Alaji , Walid Aouimeur , Haitham Ghanem , Etienne Okada , Sylvie Lepilliet , et al. Microwave and Optical Technology Letters, 2021, 63 (3), pp.823-828. ⟨10.1002/mop.32685⟩ Article dans une revue hal-03135959v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate Philippe Altuntas , François Lecourt , Adrien Cutivet , N. Defrance , Etienne Okada , et al. IEEE Electron Device Letters, 2015, 36 (4), pp.303-305. ⟨10.1109/LED.2015.2404358⟩ Article dans une revue hal-03276913v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate Marie Lesecq , Y. Fouzi , A. Abboud , N. Defrance , Francois Vaurette , et al. European Materials Research Society 2022 Fall meeting, (E-MRS 2022), Sep 2022, Warsaw, Poland Communication dans un congrès hal-04039596v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications Riad Kabouche , Joff Derluyn , Roland Püsche , Stefan Degroote , Marianne Germain , et al. 13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.5-8, ⟨10.23919/EuMIC.2018.8539962⟩ Communication dans un congrès hal-02356753v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		A GaN Schottky diode-based analog phase shifter MMIC Chong Jin , Etienne Okada , Marc Faucher , Damien Ducatteau , Mohammed Zaknoune , et al. 9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.96-99, ⟨10.1109/EuMIC.2014.6997800⟩ Communication dans un congrès hal-03286170v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology A. Soltani , Y. Cordier , J.C. Gerbedoen , S. Joblot , Etienne Okada , et al. Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩ Article dans une revue hal-00872010v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V Kathia Harrouche , Sri Saran Vankatachalam , François Grandpierron , Etienne Okada , F Medjdoub European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. pp.223, session 5B - B Plasmas & Gas Communication dans un congrès hal-03677311v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Polarization engineering of AlGaN/GaN HEMTs for high power applications at 40 GHz Stéphanie Rennesson , François Lecourt , N. Defrance , M. Chmielowska , S. Chenot , et al. Joint 5th International Workshop on Silicon Carbide Hetero-Epitaxy and 5th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC-WASMPE 2013, 2013, Nice, France Communication dans un congrès hal-00987957v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs Philippe Altuntas , N. Defrance , Marie Lesecq , Alain Agboton , Rezki Ouhachi , et al. 9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.88-91, ⟨10.1109/EuMIC.2014.6997798⟩ Communication dans un congrès hal-03276914v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz Mohamed-Reda Irekti , Marie Lesecq , N. Defrance , Etienne Okada , Eric Frayssinet , et al. Semiconductor Science and Technology, 2019, 34 (12), pp.12LT01. ⟨10.1088/1361-6641/ab4e74⟩ Article dans une revue hal-02929065v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		UTC Photodiodes on Silicon Nitride Enabling 100 Gbit/s Terahertz Links at 300 GHz Dennis Maes , Sam Lemey , Gunther Roelkens , Mohammed Zaknoune , Vanessa Avramovic , et al. European Conference on Optical Communication, ECOC 2022, Sep 2022, Basel, Switzerland. Session Photodiodes and Photodetectors (Th2E), 2 p Communication dans un congrès hal-03959704v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Development of setup for on-wafer pulse-to-pulse stability characterization of GaN HEMT transistor in KU-band Romain Pécheux , Guillaume Ducournau , Riad Kabouche , Etienne Okada , Christian Mondolot , et al. 16èmes Journées Nano, Micro, et Optoélectronique, JNMO 2018, Jun 2018, Agay, France Communication dans un congrès hal-02356912v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Commutateur RF fabriqué à partir de matériau 2D S. Skrzypczak , Myungsoo Kim , Guillaume Ducournau , Dominique Vignaud , Remy Gassilloud , et al. XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France Communication dans un congrès hal-03702712v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		STARGAN : études de structures avancées de la filière nitrure de gallium (GaN) François Lecourt , Yannick Douvry , Marie Lesecq , N. Defrance , Alain Agboton , et al. Journées Nationales en Nanosciences et Nanotechnologies, J3N 2013, 2013, Marseille, France Communication dans un congrès hal-00941541v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz Stéphanie Rennesson , M. Chmielowska , S. Chenot , Yvon Cordier , François Lecourt , et al. 10th International Conference on Nitride Semiconductors, ICNS-10, 2013, Washington, DC, United States Communication dans un congrès hal-00987956v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Characterization and modeling of 650V GaN diodes for high frequency power conversion Doublet Martin , N. Defrance , Loris Pace , Etienne Okada , Thierry Dusquesne , et al. DMC conference, Jul 2021, BATH, United Kingdom. pp.1-5 Communication dans un congrès hal-03341230v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Femtosecond laser micromachining of crystalline silicon for ablation of deep macro-sized cavities for silicon-on-insulator applications Arun Bhaskar , Justine Philippe , Flavie Braud , Etienne Okada , J.F. Robillard , et al. SPIE Photonics West, Conference 10906 - Laser-based Micro- and Nanoprocessing XIII, Feb 2019, San Francisco, United States. 109060K, 13 p., ⟨10.1117/12.2507652⟩ Communication dans un congrès hal-02317233v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Large signal microwave performances of high-k metal gate 28 nm CMOS technology R. Ouhachi , A. Pottrain , D. Ducatteau , Etienne Okada , D. Gloria , et al. Electronics Letters, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩ Article dans une revue hal-00788176v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Gallium nitride MEMS resonators: how residual stress impacts design and performances Christophe Morelle , Didier Theron , Joff Derluyn , Stefan Degroote , Marianne Germain , et al. Microsystem Technologies, 2018, 24 (1), pp.371-377. ⟨10.1007/s00542-017-3293-0⟩ Article dans une revue hal-03183510v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		RF power potential of high-k metal gate 28 nm CMOS technology R. Ouhachi , A. Pottrain , D. Ducatteau , Etienne Okada , Christophe Gaquière , et al. International Semiconductor Conference, CAS 2013, 2013, Sinaia, Romania. paper 9057, 181-184, ⟨10.1109/SMICND.2013.6688649⟩ Communication dans un congrès hal-00922406v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Load-pull measurement of SiGe:C HBT in BiCMOS 55 nm featuring 11 dBm of output power at 185 GHz Caroline Maye , Sylvie Lepilliet , Etienne Okada , E. Brezza , A. Gauthier , et al. 16th European Microwave Integrated Circuits Conference, EuMIC 2021, Apr 2022, London, United Kingdom. ⟨10.23919/EuMIC50153.2022.9783811⟩ Communication dans un congrès hal-03637263v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		[Award] Sub-micron thick AlN/GaN-on-Si HEMTs grown by MBE with reduced trapping effects and superior blocking voltage for RF applications Elodie Carneiro , Stéphanie Rennesson , Sebastian Tamariz , Lyes Ben Hammou , Kathia Harrouche , et al. 14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan Communication dans un congrès hal-04397317v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs Ezgi Dogmus , Riad Kabouche , Astrid Linge , Etienne Okada , Malek Zegaoui , et al. physica status solidi (a), 2017, 214 (8), pp.1600797. ⟨10.1002/pssa.201600797⟩ Article dans une revue hal-03028465v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate Marie Lesecq , Yassine Fouzi , Ali Abboud , N. Defrance , Francois Vaurette , et al. Microelectronic Engineering, 2023, 276, pp.111998. ⟨10.1016/j.mee.2023.111998⟩ Article dans une revue hal-04084512v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication Circuits N. Defrance , Etienne Okada , Florent Albany , Nathalie Labat , Nathalie Malbert , et al. WOCSDICE 2019, Jun 2019, Cabourg, France Communication dans un congrès hal-02502499v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Non-volatile RF and mm-wave switches based on monolayer hBN Myungsoo Kim , Emiliano Pallecchi , Ruijing Ge , Xiaohan Wu , Vanessa Avramovic , et al. IEEE International Electron Devices Meeting, IEDM 2019, Session 9 - Microwave, Millimeter Wave and Analog Technology - Compound Semiconductors and Novel Materials for RF and mmWave, Dec 2019, San Francisco, United States. paper 9.5, 4 p., ⟨10.1109/IEDM19573.2019.8993470⟩ Communication dans un congrès hal-03335212v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band Riad Kabouche , Etienne Okada , Ezgi Dogmus , Astrid Linge , Malek Zegaoui , et al. IEEE Microwave and Wireless Components Letters, 2017, 27 (4), pp.419-421. ⟨10.1109/LMWC.2017.2678424⟩ Article dans une revue hal-03028333v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness Romain Pécheux , Riad Kabouche , Ezgi Dogmus , Astrid Linge , Etienne Okada , et al. ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Sep 2017, Leuven, Belgium. pp.228-231, ⟨10.1109/ESSDERC.2017.8066633⟩ Communication dans un congrès hal-03028460v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Modeling of GaN Schottky diodes Chong Jin , Etienne Okada , Marc Faucher , Damien Ducatteau , Mohamed Zaknoune , et al. 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p Communication dans un congrès hal-01020469v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances Kathia Harrouche , Srisaran Venkatachalam , François Grandpierron , Etienne Okada , Farid Medjdoub Applied Physics Express, 2022, 15 (11), pp.116504. ⟨10.35848/1882-0786/ac9c46⟩ Article dans une revue hal-03828718v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More

Filtrer vos résultats

Design of tunable power detector towards 5G applications

Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications

A GaN Schottky diode-based analog phase shifter MMIC

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V

Polarization engineering of AlGaN/GaN HEMTs for high power applications at 40 GHz

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

UTC Photodiodes on Silicon Nitride Enabling 100 Gbit/s Terahertz Links at 300 GHz

Development of setup for on-wafer pulse-to-pulse stability characterization of GaN HEMT transistor in KU-band

Commutateur RF fabriqué à partir de matériau 2D

STARGAN : études de structures avancées de la filière nitrure de gallium (GaN)

Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz

Characterization and modeling of 650V GaN diodes for high frequency power conversion

Femtosecond laser micromachining of crystalline silicon for ablation of deep macro-sized cavities for silicon-on-insulator applications

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

Gallium nitride MEMS resonators: how residual stress impacts design and performances

RF power potential of high-k metal gate 28 nm CMOS technology

Load-pull measurement of SiGe:C HBT in BiCMOS 55 nm featuring 11 dBm of output power at 185 GHz

[Award] Sub-micron thick AlN/GaN-on-Si HEMTs grown by MBE with reduced trapping effects and superior blocking voltage for RF applications

High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication Circuits

Non-volatile RF and mm-wave switches based on monolayer hBN

Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band

Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness

Modeling of GaN Schottky diodes

Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances