Etienne Gheeraert
Professeur à l'université Grenoble Alpes,
Institut Néel
91
Documents
Identifiants chercheurs
- etienne-gheeraert
- ResearcherId : E-8071-2015
- 0000-0002-9952-5805
- IdRef : 075094541
- ResearcherId : http://www.researcherid.com/rid/E-8071-2015
Publications
- 1
- 1
Towards the implementation of diamond power devices in power converters and measurements of their switching lossesMRS Spring Meeting 2021, Apr 2021, Seattle, United States
Communication dans un congrès
hal-03289135v1
|
|
Cyclic BCl3-based plasma treatments for enhancing surface quality of (010) β-Ga2O3 substratesJoint Conference of XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) and the 10th International Conference on Reactive Plasmas (ICRP-10), Jul 2019, Sapporo, Japan
Communication dans un congrès
hal-02338953v1
|
|
Comparative study of two Atomic Layer Etching processes for GaN19th International Conference on Atomic layer Deposition (ALD2019), Jul 2019, Bellevue, United States
Communication dans un congrès
hal-02338959v1
|
|
|
Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissanceSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
hal-02981917v1
|
Lateral diamond Schottky diodes on heteroepitaxial substrateSBDD XXIII Hasselt Diamond Workshop, Mar 2018, Hasselt, Belgium
Communication dans un congrès
hal-01965380v1
|
|
200V, 4MV/cm lateral diamond MOSFET2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268458⟩
Communication dans un congrès
hal-01701734v1
|
|
|
Simulation numérique et caractérisation de composants de puissance en diamantSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361596v1
|
Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States
Communication dans un congrès
hal-01306775v1
|
|
|
La diode Schottky en diamant : le présent et le futurSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361578v1
|
Enabling high switching speed for diamond power transistors3rd French-Japanese workshop on Diamond Power Device, Jul 2015, France
Communication dans un congrès
hal-01176598v1
|
|
Diamond as substrate for 3C-SiC growth: A TEM studySBDD, 2014, Hasselt, Belgium
Communication dans un congrès
hal-01147817v1
|
|
Comparison of atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated boron doped diamondSBDD 2014, Feb 2014, Hasselt, Belgium
Communication dans un congrès
hal-00989688v1
|
|
Diamond power devices: status of delta-doped transistorJapanese Society of Applied Physics and Materials Research Society joint meeting, Sep 2013, Kyoto, Japan
Communication dans un congrès
hal-00968277v1
|
|
Diamond bipolar device simulationIEEE Workshop on Wide Bandgap Power Devices and Applications, Oct 2013, Columbus, United States
Communication dans un congrès
hal-00911320v1
|
|
Models and parameters study for diamond electronic devices simulations74th Japan Society of Applied Physics Autumn Meeting. (JSAP-MRS joint symposia), Sep 2013, Kyoto, Japan
Communication dans un congrès
hal-00989536v1
|
|
Parameter adjustement for diamond electronic devices simulationXVIIIth SBDD 2013, 2013, Hasselt, Belgium
Communication dans un congrès
hal-00989542v1
|
|
Metal oxide semiconductor structure using oxygen-terminated diamond.MRS Fall Meeting 2013 : Symposium S - Diamond Electronics and Biotechnology Fundamentals to Applications VII in Boston, US, Dec 2013, Boston, United States
Communication dans un congrès
hal-00993926v1
|
|
Diamond Electronic DevicesInternational Union of Materials Research Societies - International Conference on Electronic Materials, Sep 2012, Yokohama, Japan
Communication dans un congrès
hal-00968270v1
|
|
|
Recent progress of diamond device toward power applicationEXMATEC 2012 : 11th Expert Evaluation and Control of Compound Semicon- ductor Materials and Technologies conference, Porquerolles Islands, France., May 2012, Porquerolles, France
Communication dans un congrès
hal-00994084v1
|
Delta doping for advanced diamond devicesXXth International Materials Research Congress, Aug 2011, Cancun, Mexico
Communication dans un congrès
hal-00968256v1
|
|
Diamond delta-FETMaterials Research Society Fall Meeting, Nov 2011, Boston, United States
Communication dans un congrès
hal-00968263v1
|
|
Nanocrystals growth on carbon nanotubesEuropean Materials Research Society Spring Meeting, 2010, Strasbourg, France. pp.141
Communication dans un congrès
hal-00968243v1
|
|
|
Behavior of CVD diamond-based TL dosimeters in radiotherapy environments using photon and electron beams from treatment accelerators21st Conference on Diamond, Diamond like Materials, Carbon Nanotubes and Nitrides, Sep 2010, Budapest, Hungary
Communication dans un congrès
hal-01307873v1
|
The Nickel centre in diamond21th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, Sep 2010, Budapest, Hungary
Communication dans un congrès
hal-00968253v1
|
|
Diamond for spintronicsNIMS-AIST joint workshop, 2009, Tsukuba, Japan
Communication dans un congrès
hal-00968247v1
|
|
|
Performance of irradiated CVD diamond micro-strip sensorsInternational Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices 3, Jun 2000, Firenze, Italy. pp.706-712
Communication dans un congrès
in2p3-00012149v1
|
Pulse height distribution and radiation tolerance of CVD diamond detectorsInternational workshop on vertex detectors 8, Jun 1999, Texel, Netherlands. pp.244-250
Communication dans un congrès
in2p3-00012183v1
|
|
CVD diamond detectors for ionizing radiationInternational workshop on vertex detectors, Sep 1998, Santorini, Greece. pp.194-201
Communication dans un congrès
in2p3-00012137v1
|
|
|
Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHCInternational conference on radiation effects on semiconductor materials, detectors and devices N0 2, Mar 1998, Florence, Italy. pp.173-180
Communication dans un congrès
in2p3-00012135v1
|
Review of the development of diamond radiation sensorsInternational Workshop on Gallium Arsenide Detectors and Related Compounds N0 6, Jun 1998, Pruhonice - Prague, Czech Republic. pp.131-145
Communication dans un congrès
in2p3-00012134v1
|
|
CVD diamond pixel detectors for LHC experimentsInternational Conference On Advanced Technology And Particle Physics 6, Oct 1998, Villa Olmo, Italy. pp.497-504
Communication dans un congrès
in2p3-00012144v1
|
|
Status of diamond particle detectors6th international workshop on vertex detectors, Aug 1997, Rio De Janeiro, Brazil. pp.196-202
Communication dans un congrès
in2p3-00013312v1
|
|
Recent results on CVD diamond radiation sensorsPisa meeting on advanced detectors N0 7, May 1997, La Biodola, Isola D'Elba, Italy. pp.264-270
Communication dans un congrès
in2p3-00012136v1
|
|
Development of Atomic Layer Etching (ALEt) for GaN-based materialsInternational Workshop on Nitride Semiconductors, Nov 2018, Kanazawa, Japan
Poster de conférence
hal-02008012v1
|
Power electronic devices performances based on diamond propertiesS. Koizumi; H. Umezawa; J. Pernot; M. Suzuki. Power Electronics Device Applications of Diamond Semiconductors, Woodhead Publishing Elsevier, 2018, 978-0-08-102183-5
Chapitre d'ouvrage
hal-01991092v1
|
Diamond MIS TransistorUnited States, Patent n° : US11569381 (B2). 2023
Brevet
hal-04019131v1
|
|
Dependence of the superconducting transition temperature on the doping level in single crystalline diamond films.2004
Pré-publication, Document de travail
hal-00002689v1
|