Nombre de documents

63


Article dans une revue35 documents

  • Hitoshi Umezawa, Hiroki Gima, Khaled Driche, Yukako Kato, Tsuyoshi Yoshitake, et al.. Defect and field-enhancement characterization through electron-beam-induced current analysis. Applied Physics Letters, American Institute of Physics, 2017, 110 (18), pp.182103. 〈10.1063/1.4982590〉. 〈hal-01617264〉
  • Thanh-Toan Pham, Julien Pernot, Gaëtan Perez, David Eon, Etienne Gheeraert, et al.. Deep-depletion mode boron doped monocrystalline diamond metal oxide semiconductor field effect transistor. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2017, 〈10.1109/LED.2017.2755718〉. 〈hal-01617256〉
  • Khaled Driche, H. Umezawa, Nicolas Rouger, Gauthier Chicot, Etienne Gheeraert. Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2017, 56, pp.04CR12. 〈10.7567/JJAP.56.04CR12〉. 〈hal-01502587〉
  • T. Teraji, A. Fiori, N. Kiritani, S. Tanimoto, E. Gheeraert, et al.. Mechanism of reverse current increase of vertical-type diamond Schottky diodes. Journal of Applied Physics, American Institute of Physics, 2017, 122 (13), pp.135304. 〈10.1063/1.4994570〉. 〈hal-01617252〉
  • F. Picollo, S. Rubanov, C. Tomba, A. Battiato, E. Enrico, et al.. Effects of high-power laser irradiation on sub-superficial graphitic layers in single-crystal diamond. Acta Materialia, Elsevier, 2016, 103, pp.665-671. 〈10.1016/j.actamat.2015.10.046〉. 〈in2p3-01270645〉
  • Aurélien Maréchal, Manuela Aoukar, Christophe Vallee, Chloé Rivière, David Eon, et al.. Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor. Applied Physics Letters, American Institute of Physics, 2015, 107, pp.141601. 〈http://scitation.aip.org/content/aip/journal/apl/107/14/10.1063/1.4931123〉. 〈10.1063/1.4931123〉. 〈hal-01364101〉
  • Pierre Muret, David Eon, Aboulaye Traoré, Aurélien Maréchal, Julien Pernot, et al.. Hole injection contribution to transport mechanisms in metal/p− /p++and metal/oxide/p− /p++ diamond structures. physica status solidi (a), Wiley, 2015, 212 (11), pp.2501-2506. 〈10.1002/pssa.201532187〉. 〈hal-01258521〉
  • Aboulaye Traore, Pierre Muret, Alexandre Fiori, David Eon, Etienne Gheeraert, et al.. Zr/oxidized diamond interface for high power Schottky diodes. Applied Physics Letters, American Institute of Physics, 2014, 104, pp.052105. 〈10.1063/1.4864060〉. 〈hal-00943411〉
  • S. Yamasaki, Etienne Gheeraert, Yasuo Koide. Doping and interface of homoepitaxial diamond for electronic applications. MRS Bulletin, Cambridge University Press (CUP), 2014, 39, pp.499. 〈10.1557/mrs.2014.100〉. 〈hal-01147810〉
  • Aurélien Maréchal, Nicolas Rouger, Jean-Christophe Crébier, Julien Pernot, Satoshi Koizumi, et al.. Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations. Diamond and Related Materials, Elsevier, 2014, 43, pp.34. 〈10.1016/j.diamond.2014.01.009〉. 〈hal-00968208〉
  • Gabriel Ferro, F. Lloret, J. Piñero, D. Araujo, M. Villar, et al.. Diamond as substrate for 3C-SiC growth: A TEM study. physica status solidi (a), Wiley, 2014, 211 (10), pp.2302 - 2306. 〈10.1002/pssa.201431179〉. 〈hal-01615313〉
  • Clément Hébert, Sébastien Ruffinatto, David Eon, Michel Mermoux, Etienne Gheeraert, et al.. A composite material made of carbon nanotubes partially embedded in a nanocrystalline diamond film. Carbon, Elsevier, 2013, 52, pp.408-417. 〈10.1016/j.carbon.2012.09.051〉. 〈hal-00854594〉
  • Hasan-Al Mehedi, Jean‐charles Arnault, David Eon, Clément Hébert, Davy Carole, et al.. Etching mechanism of diamond by Ni nanoparticles for fabrication of nanopores. Carbon, Elsevier, 2013, 59, pp.448-456. 〈10.1016/j.carbon.2013.03.038〉. 〈hal-00854585〉
  • Alexandre Fiori, François Jomard, Tokuyuki Teraji, Satoshi Koizumi, Junichi Isoya, et al.. Synchronized B and 13C Diamond Delta Structures for an Ultimate In-Depth Chemical Characterization. Japanese Journal of Applied Physics, part 2 : Letters, Japan Society of Applied Physics, 2013, 6, pp.045801. 〈10.7567/APEX.6.045801〉. 〈hal-00838943〉
  • Gauthier Chicot, Aurélien Maréchal, Renaud Motte, Pierre Muret, Etienne Gheeraert, et al.. Metal oxide semiconductor structure using oxygen-terminated diamond. Applied Physics Letters, American Institute of Physics, 2013, 102 (24), pp.242108. 〈10.1063/1.4811668〉. 〈hal-00854602〉
  • Gauthier Chicot, Thu Nhi Tran Thi, Alexandre Fiori, François Jomard, Etienne Gheeraert, et al.. Hole transport in boron delta-doped diamond structures. Applied Physics Letters, American Institute of Physics, 2012, 101, pp.162101. 〈10.1063/1.4758994〉. 〈hal-00760789〉
  • Hasan-Al Mehedi, Clément Hébert, Sébastien Ruffinatto, David Eon, Franck Omnès, et al.. Formation of oriented nanostructures in diamond using metallic nanoparticles. Nanotechnology, Institute of Physics, 2012, 23, pp.455302. 〈hal-00744357〉
  • Alexandre Fiori, Thu Nhi Tran Thi, Gauthier Chicot, François Jomard, Franck Omnès, et al.. In situ etching-back processes for a sharper top interface in boron delta-doped diamond structures. Diamond and Related Materials, Elsevier, 2012, 24, pp.175-178. 〈10.1016/j.diamond.2012.01.018〉. 〈hal-00739488〉
  • Katja Beha, Helmut Fedder, Marco Wolfer, Merle C. Becker, Petr Siyushev, et al.. Diamond nanophotonics. Beilstein Journal of Nanotechnology, Karlsruhe Institute of Technology., 2012, 2, pp.895. 〈10.3762/bjnano.3.100〉. 〈hal-00968240〉
  • P. Plochocka, O. Portugall, P. Y. Solane, Etienne Gheeraert, Laurent Ranno, et al.. High- field magnetospectroscopy to probe the 1.4-eV Ni color center in diamond. Physical Review B : Condensed matter and materials physics, American Physical Society, 2012, 86, pp.045203. 〈hal-00755551〉
  • Etienne Gheeraert, Amit Kumar, Etienne Bustarret, Laurent Ranno, Laurence Magaud, et al.. Investigation of nickel lattice sites in diamond: Density functional theory and x-ray absorption near-edge structure experiments. Physical Review B : Condensed matter and materials physics, American Physical Society, 2012, 86, pp.054116. 〈hal-00740289〉
  • Wiebke Janssen, Etienne Gheeraert. Dry etching of diamond nanowires using self-organized metal droplet masks. Diamond and Related Materials, Elsevier, 2011, 20 (3), pp.389-394. 〈10.1016/j.diamond.2011.01.037〉. 〈hal-00734741〉
  • Thu Nhi Tran Thi, Bruno Fernandez, David Eon, Etienne Gheeraert, Juergen Haertwig, et al.. Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes. physica status solidi (a), Wiley, 2011, 208 (9), pp.2057-2061. 〈10.1002/pssa.201100038〉. 〈hal-00740914〉
  • Mourad Benabdesselam, A. Petitfils, Frédéric Wrobel, Franck Mady, Serge Marcie, et al.. Behavior of CVD diamond-based TL dosimeters in radiotherapy environments using photon and electron beams from treatment accelerators. Diamond and Related Materials, Elsevier, 2011, 20 (4), pp.520-522. 〈10.1016/j.diamond.2011.02.004〉. 〈hal-00740867〉
  • Wiebke Janssen, Sebastian Faby, Etienne Gheeraert. Bottom-up fabrication of diamond nanowire arrays. Diamond and Related Materials, Elsevier, 2010, 20 (5-6), pp.779-781. 〈10.1016/j.diamond.2011.03.024〉. 〈hal-00739484〉
  • M. Wolfer, H. Obloh, O. A. Williams, C.-C. Leancu, L. Kirste, et al.. Doping of single crystalline diamond with nickel. physica status solidi (a), Wiley, 2010, 207 (9), pp.2054-2057. 〈10.1002/pssa.201000364〉. 〈hal-00740916〉
  • Alexandre Fiori, Julien Pernot, Etienne Gheeraert, Etienne Bustarret. Simulations of carrier confinement in boron delta-doped diamond devices. physica status solidi (a), Wiley, 2010, 207 (9), pp.2084-2087. 〈10.1002/pssa.201000062〉. 〈hal-00739710〉
  • S. Marcet, D. Ferrand, D. Halley, S. Kuroda, H. Mariette, et al.. Magneto-optical spectroscopy of (Ga,Mn)N epilayers. PHYS. REV. B, 2006, 74, pp.125201/1-11. 〈hal-00211483〉
  • Stéphane Marcet, David Ferrand, David Halley, Shinji Kuroda, Henri Mariette, et al.. Magneto-optical spectroscopy of (Ga,Mn)N epilayers. Physical Review B : Condensed matter and materials physics, American Physical Society, 2006, 74, pp.125201. 〈10.1103/PhysRevB.74.125201〉. 〈hal-00022115〉
  • Michel Mermoux, Bernadette Marcus, Alexandre Crisci, Antonella Tajani, Etienne Gheeraert, et al.. Micro-Raman scattering from undoped and phosphorus-doped (111) homoepitaxial diamond films: Stress imaging of cracks. Journal of Applied Physics, American Institute of Physics, 2005, 97 (4), p. 043530(12 p.). 〈10.1063/1.1849828〉. 〈hal-00386425〉
  • Michel Mermoux, Antonella Tajani, Bernadette Marcus, Etienne Bustarret, Etienne Gheeraert, et al.. Characterization of ‹111› diamond thin films by micro-Raman spectroscopy. Diamond and Related Materials, Elsevier, 2004, 13 (4-8), pp. 886-890. 〈10.1016/j.diamond.2003.12.002〉. 〈hal-00417861〉
  • Michel Mermoux, Bernadette Marcus, Alexandre Crisci, Antonella Tajani, Etienne Gheeraert, et al.. Internal stresses in {111} homoepitaxial CVD diamond. Diamond and Related Materials, Elsevier, 2004, 13 (2), pp. 329-334. 〈10.1016/j.diamond.2003.11.005〉. 〈hal-00417859〉
  • E. Bustarret, J. Kacmarcik, C. Marcenat, E. Gheeraert, C. Cytermann, et al.. Dependence of the Superconducting Transition Temperature on the Doping Level in Single-Crystalline Diamond Films. Physical Review Letters, American Physical Society, 2004, 93, pp.237005. 〈10.1103/PhysRevLett.93.237005〉. 〈hal-00959093〉
  • Antonella Tajani, Michel Mermoux, Bernadette Marcus, Etienne Bustarret, Etienne Gheeraert, et al.. Strains and cracks in undoped and phosphorus-doped {111} homoepitaxial diamond films. physica status solidi (a), Wiley, 2003, 199 (1), pp. 87-91. 〈10.1002/pssa.200303813〉. 〈hal-00418044〉
  • W. Adam, C. Bauer, E. Berdermann, P. Bergonzo, F. Bogani, et al.. The first bump-bonded pixel detectors on CVD diamond. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 1999, 436, pp.326-335. 〈in2p3-00012128〉

Communication dans un congrès27 documents

  • Nicolas Rouger, Aurélien Maréchal, Gauthier Chicot, Gaetan Perez, Thanh-Toan Pham, et al.. Simulation numérique et caractérisation de composants de puissance en diamant. Symposium de Genie Electrique, Jun 2016, Grenoble, France. 〈hal-01361596〉
  • David Eon, Julien Pernot, Aboulaye Traoré, Nicolas Rouger, Etienne Gheeraert. La diode Schottky en diamant : le présent et le futur. Symposium de Genie Electrique, Jun 2016, Grenoble, France. 〈hal-01361578〉
  • Nicolas Rouger, D. Eon, Gaëtan Perez, Pierre-Olivier Jeannin, Pierre Lefranc, et al.. Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor. 2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States. 〈hal-01306775〉
  • Nicolas Rouger, Aurélien Maréchal, Thanh Long Le, Davy Colin, Julien Pernot, et al.. Enabling high switching speed for diamond power transistors. 3rd French-Japanese workshop on Diamond Power Device, Jul 2015, France. 〈hal-01176598〉
  • Aurélien Maréchal, Gauthier Chicot, Nicolas Rouger, Julien Pernot, Etienne Gheeraert. Comparison of atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated boron doped diamond. SBDD 2014, Feb 2014, Hasselt, Belgium. 〈hal-00989688〉
  • F. Lloret, José Carlos Pinero, Daniel Araujo, M.P. Villar, Etienne Gheeraert, et al.. Diamond as substrate for 3C-SiC growth: A TEM study. SBDD, 2014, Hasselt, Belgium. 211, pp.2302, 2014, physica status solidi (a). 〈10.1002/pssa.201431179〉. 〈hal-01147817〉
  • Etienne Gheeraert, Aboulaye Traore, Julien Pernot, Gauthier Chicot, Alexandre Fiori, et al.. Diamond power devices: status of delta-doped transistor. Japanese Society of Applied Physics and Materials Research Society joint meeting, Sep 2013, Kyoto, Japan. 〈hal-00968277〉
  • Aurélien Maréchal, Nicolas Rouger, Jean-Christophe Crébier, Julien Pernot, S. Koizumi, et al.. Models and parameters study for diamond electronic devices simulations. 74th Japan Society of Applied Physics Autumn Meeting. (JSAP-MRS joint symposia), Sep 2013, Kyoto, Japan. 2013. 〈hal-00989536〉
  • Aurélien Maréchal, Nicolas Rouger, Jean-Christophe Crébier, Julien Pernot, S. Koizumi, et al.. Parameter adjustement for diamond electronic devices simulation. XVIIIth SBDD 2013, 2013, Hasselt, Belgium. 2013. 〈hal-00989542〉
  • Aurélien Maréchal, Nicolas Rouger, Jean-Christophe Crébier, Julien Pernot, S. Koizumi, et al.. Diamond bipolar device simulation. IEEE Workshop on Wide Bandgap Power Devices and Applications, Oct 2013, Columbus, United States. 2013. 〈hal-00911320〉
  • Julien Pernot, Gauthier Chicot, Aurélien Maréchal, Etienne Gheeraert, Pierre Muret. Metal oxide semiconductor structure using oxygen-terminated diamond.. MRS Fall Meeting 2013 : Symposium S - Diamond Electronics and Biotechnology Fundamentals to Applications VII in Boston, US, Dec 2013, United States. 〈hal-00993926〉
  • Etienne Gheeraert, Aboulaye Traore, Julien Pernot, Gauthier Chicot, Alexandre Fiori, et al.. Diamond Electronic Devices. International Union of Materials Research Societies - International Conference on Electronic Materials, Sep 2012, Yokohama, Japan. 〈hal-00968270〉
  • Julien Pernot, Gauthier Chicot, Alexandre Fiori, Abdoulaye Traore, Thu Nhi Tran Thi, et al.. Recent progress of diamond device toward power application. EXMATEC 2012 : 11th Expert Evaluation and Control of Compound Semicon- ductor Materials and Technologies conference, Porquerolles Islands, France., May 2012, France. 〈hal-00994084〉
  • Etienne Gheeraert, Aboulaye Traore, Julien Pernot, Alexandre Fiori, Franck Omnès, et al.. Diamond delta-FET. Materials Research Society Fall Meeting, Nov 2011, Boston, United States. 〈hal-00968263〉
  • Etienne Gheeraert, Aboulaye Traore, Julien Pernot, Alexandre Fiori, Franck Omnès, et al.. Delta doping for advanced diamond devices. XXth International Materials Research Congress, Aug 2011, Cancun, Mexico. 〈hal-00968256〉
  • Hasan-Al Mehedi, Etienne Gheeraert. Nanocrystals growth on carbon nanotubes. European Materials Research Society Spring Meeting, 2010, Strasbourg, France. 1292, pp.141, 2010. 〈hal-00968243〉
  • Etienne Gheeraert, Amit Kumar, Laurence Magaud, Laurent Ranno, Julien Pernot, et al.. The Nickel centre in diamond. 21th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, Sep 2010, Budapest, Hungary. 〈hal-00968253〉
  • M. Benabdesselam, A Petitfils, F Wrobel, F. Mady, S Marcié, et al.. Behavior of CVD diamond-based TL dosimeters in radiotherapy environments using photon and electron beams from treatment accelerators. 21st Conference on Diamond, Diamond like Materials, Carbon Nanotubes and Nitrides, Sep 2010, Budapest, Hungary. 2011. 〈hal-01307873〉
  • Etienne Gheeraert. Diamond for spintronics. NIMS-AIST joint workshop, 2009, Tsukuba, Japan. 〈hal-00968247〉
  • W. Adam, E. Berdermann, P. Bergonzo, G. Bertuccio, F. Bogani, et al.. Performance of irradiated CVD diamond micro-strip sensors. International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices 3, Jun 2000, Firenze, Italy. 476, pp.706-712, 2002. 〈in2p3-00012149〉
  • W. Adam, E. Berdermann, P. Bergonzo, G. Bertuccio, F. Bogani, et al.. Pulse height distribution and radiation tolerance of CVD diamond detectors. de Jong S. Koffeman E. International workshop on vertex detectors 8, Jun 1999, Texel, Netherlands. 447, pp.244-250, 2000. 〈in2p3-00012183〉
  • R. Wedenig, W. Adam, C. Bauer, E. Berdermann, P. Bergonzo, et al.. CVD diamond pixel detectors for LHC experiments. International Conference On Advanced Technology And Particle Physics 6, Oct 1998, Villa Olmo, Italy. 78, pp.497-504, 1999. 〈in2p3-00012144〉
  • D. Meier, W. Adam, C. Bauer, E. Berdermann, P. Bergonzo, et al.. Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC. International conference on radiation effects on semiconductor materials, detectors and devices N0 2, Mar 1998, Florence, Italy. 426, pp.173-180, 1999. 〈in2p3-00012135〉
  • M. Friedl, W. Adam, C. Bauer, E. Berfermann, P. Bergonzo, et al.. CVD diamond detectors for ionizing radiation. International workshop on vertex detectors, Sep 1998, Santorini, Greece. 435, pp.194-201, 1999. 〈in2p3-00012137〉
  • W. Adam, C. Bauer, E. Berdermann, P. Bergonzo, F. Bogani, et al.. Review of the development of diamond radiation sensors. International Workshop on Gallium Arsenide Detectors and Related Compounds N0 6, Jun 1998, Pruhonice - Prague, Czech Republic. 434, pp.131-145, 1999. 〈in2p3-00012134〉
  • P. Weilhammer, W. Adam, C. Bauer, E. Berdermann, F. Bogani, et al.. Recent results on CVD diamond radiation sensors. Pisa meeting on advanced detectors N0 7, May 1997, La Biodola, Isola D'Elba, Italy. 409, pp.264-270, 1998. 〈in2p3-00012136〉
  • M. Krammer, W. Adam, C. Bauer, E. Berdermann, F. Bogani, et al.. Status of diamond particle detectors. 6th international workshop on vertex detectors, Aug 1997, Rio De Janeiro, Brazil. 418, pp.196-202, 1998. 〈in2p3-00013312〉

Pré-publication, Document de travail1 document

  • Etienne Bustarret, Jozef Kacmarcik, Christophe Marcenat, Etienne Gheeraert, Catherine Cytermann, et al.. Dependence of the superconducting transition temperature on the doping level in single crystalline diamond films.. 2004. 〈hal-00002689〉