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255 résultats
Analyses of deposition/etching regimes during selective etching of HfO2 on silicon in BCl3 plasmas: Impact of chamber walls54th International AVS Symposium & Topical Conferences, 2007, seattle, United States
Communication dans un congrès
hal-00400643v1
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Linewidth Roughness Transfer during Gate Stack Patterning with Amorphous Carbon Mask: Impact of Cure and Trim ProcessesInternational Symposium on Dry Process (DPS), Busan, Korea, September 24-25, (2009), 2009, Busan, South Korea. 31st Proceedings of International Symposium on Dry Process (DPS)
Communication dans un congrès
hal-00454193v1
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Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmasJournal of Vacuum Science and Technology, 2003, B21, pp.5
Article dans une revue
hal-00477204v1
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Synchronous Plasma Pulsing for silicon Etch ApplicationsChina Semiconductor Technology International Conference (CSTIC), 2010, Shangai, China
Communication dans un congrès
hal-00643921v1
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Plasma etching optimization and alignment control of directed self-assembled high-Χ cylindrical PS-PDMSEuropean Materials Research Society conference- E-MRS 2015, Spring Meeting, May 2015, Lille, France
Communication dans un congrès
hal-01877841v1
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Time−Modulation of High density Plasmas for Advanced Dry Etching Processes4th PESM workshop, May 2001, Belgium
Communication dans un congrès
hal-00944972v1
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The CD-AFM technique as a mean to accelerate advanced process developpement for the 45 nm Node and beyond54th International AVS Symposium & Topical Conferences, 2007, seattle, United States
Communication dans un congrès
hal-00400644v1
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Cycling of implantation step and remote plasma process step for nitride spacer etching applications.Proceedings of SPIE, the International Society for Optical Engineering, 2020, 11329, pp.16. ⟨10.1117/12.2551888⟩
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hal-02912743v1
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Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl-2/CH4 Plasma ChemistryJournal of Electronic Materials, 2018, Special Section: 17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII), 47 (9), pp.4964-4969. ⟨10.1007/s11664-018-6152-6⟩
Article dans une revue
hal-01861357v1
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Impact of plasma etching process exposure on the integrity of AlN and AlGaN layers integrated in GaN heterojunction transistors (HEMTs)Journées nationales sur les technologies émergentes en micro-nano fabrication, (JNTE2019), Nov 2019, Grenoble, France
Communication dans un congrès
hal-02916150v1
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Inductively-Coupled Pulsed Plasmas in the Presence of Synchronous Pulsed Substrate Bias for Advanced Gate EtchingAVS 56th international symposium, Nov 2009, San José, United States
Communication dans un congrès
hal-00461590v1
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Influence of plasma process on III-V/Ge multijunction solar cell via etchingSolar Energy Materials and Solar Cells, 2019, 195, pp.49-54. ⟨10.1016/j.solmat.2019.01.048⟩
Article dans une revue
hal-02064455v1
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Towards selective etching with nanometric control using remote plasma source236th Electrochemical Society meeting (ECS 2019), Oct 2019, Atlanta, USA, United States
Communication dans un congrès
hal-02324706v1
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Extending thermal stability of short-living soliton states in silicon nitride microring resonatorsOptics Continuum , 2022, 1 (7), pp.1516. ⟨10.1364/OPTCON.455403⟩
Article dans une revue
hal-03811231v1
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Poly-Si/TiN/Mo/HfO2 gate stack etching in high-density plasmasJournal of Vacuum Science and Technology, 2010, pp.B 29, (2010), 011024-1 à 9. ⟨10.1116/1.3533939⟩
Article dans une revue
hal-00623366v1
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Plasma Pulsing for Atomic Layer Etching Application3rd Plasma Etch and Strip in Microelectronics Workshop, Mar 2010, Grenoble, France
Communication dans un congrès
hal-00625384v1
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Spectral analysis of sidewall roughness during resist-core self-aligned double patterning integrationJournal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2016, 34 (5), ⟨10.1116/1.4962322⟩
Article dans une revue
hal-01882435v1
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HfO2 etching mechanisms in BCl3 based plasmas34th conference of Micro and Nano Engineering, MNE,, 2008, athenes, Greece
Communication dans un congrès
hal-00398876v1
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A new method based on AFM for the study of photoresist sidewall smoothening and LER transfer during gate patterningSPIE Advanced Lithography, Mar 2013, San José, United States. pp.86850B, ⟨10.1117/12.2011554⟩
Communication dans un congrès
hal-00849872v1
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Etching Mechanisms of Si Containing Materials in Remote Plasma Source using NF3 based Gas Mixture65th International AVS Symposium & Topical Conferences, Oct 2018, Long Beach, United States
Communication dans un congrès
hal-01942770v1
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Impact of HBr and Ar cure plasma treatments on 193 nm photoresistsProceedings of SPIE, the International Society for Optical Engineering, 2008, pp.Volume 6923 (2008) 692337-1-8
Article dans une revue
hal-00466363v1
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Directed self-assembly of PS-b-PDMS into 193nm photoresist patterns and transfer into silicon by plasma etchingSPIE Advanced Lithography, 2014, San Jose, United States. ⟨10.1117/12.2047287⟩
Communication dans un congrès
hal-01797999v1
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SF6/O2/HBr plasma processes for the etching of high aspect ratio through Silicon Via56th International AVS Symposium & Topical Conferences, 2010, Albuquerque (USA), United States
Communication dans un congrès
hal-00644020v1
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Method of patterning of magnetic tunnel junctionsPatent n° : US 8,546,263,. 2013
Brevet
hal-00925756v1
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Paving the way for multiple applications for the 3D-AFM technique in the semiconductor industrySPIE, advanced lithography, 2008, san jose, United States
Communication dans un congrès
hal-00398877v1
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Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Chlorine Chemistry17th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII), Oct 2017, Valladolid, Spain
Communication dans un congrès
hal-01711092v1
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Surface preparations impact on 248nm deep UV photo resists adhesion during a wet etchSolid State Phenomena, 2013, Vol. 195, pp 58-61
Article dans une revue
hal-00777316v1
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HfO2 etching by pulsed BCl3/Ar plasma4th PESM workshop, May 2011, Belgium
Communication dans un congrès
hal-00641438v1
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Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si 3 N 4 spacer etchingJournal of Applied Physics, 2019, 126 (24), pp.243301. ⟨10.1063/1.5131030⟩
Article dans une revue
halshs-02428534v1
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Challenges related to linewidth roughnessChina Semiconductor Technology International Conference (CSTIC), Mar 2012, Shanghai, China
Communication dans un congrès
hal-02338405v1
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