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255 résultats
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Pulsed high-density plasmas for advanced dry etching processesJournal of Vacuum Science & Technology A, 2012, 30 (4), pp.040801. ⟨10.1116/1.4716176⟩
Article dans une revue
hal-00808849v1
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Degree of polarization of the photo-luminescence and cathodo-luminescence for plasma etched InP and GaAs under control of the built-in mechanical stress in SiNx mask layer18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVIII), Sep 2019, Berlin, Germany
Communication dans un congrès
hal-02291428v1
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Sidewall roughness characterization of a spacer patterning process targeting 10 nm half pitch61st International AVS Symposium & Topical Conferences, Nov 2014, Baltimore, United States
Communication dans un congrès
hal-01798204v1
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New trends in Plasma Technologies43rd Conference on Micro and Nano Engineering (MNE), Sep 2017, Braga, Portugal
Communication dans un congrès
hal-01891286v1
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Effect of etch pattern transfer on local overlay (OVL) margin in 28nm gate integration.SPIE Advanced Lithography, 2014, San Jose, United States. ⟨10.1117/12.2042080⟩
Communication dans un congrès
hal-01797981v1
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Ultra-high selective etching in remote plasmas: application to smart etch processesPESM 2017 (Plasma Etch and Strip in Microtechnology), 2017, Louvain, Belgium
Communication dans un congrès
hal-01891297v1
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Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfacesOptics Letters, 2018, 43 (15), pp.3505. ⟨10.1364/OL.43.003505⟩
Article dans une revue
hal-01861356v1
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Preferential crystal orientation etching of GaN nanopillars in Cl2 plasmaMaterials Science in Semiconductor Processing, 2023, 165, pp.107654. ⟨10.1016/j.mssp.2023.107654⟩
Article dans une revue
hal-04123125v1
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Anisotropic and Low Damage III-V/Ge Heterostructures via Etching for Multijunction Photovoltaic Cell FabricationPlasma Etch and Strip in Microelectronics (PESM), 10th International Workshop, Oct 2017, leuven, Belgium
Communication dans un congrès
hal-01929191v1
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Compact soliton generation based on the butt-coupling between a Si3N4 microresonator and a DFB laserOSA Advanced Photonics Congress 2020 (APC 2020), Jul 2020, Washington, United States. pp.JTu2D.6, ⟨10.1364/IPRSN.2020.JTu2D.6⟩
Communication dans un congrès
hal-03128968v1
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Compact optical frequency comb source based on a DFB butt-coupled to a silicon nitride microring2019 IEEE International Topical Meeting on Microwave Photonics , 2019, 2019 International Topical Meeting on Microwave Photonics (MWP), ⟨10.1109/MWP.2019.8892102⟩
Article dans une revue
hal-02324813v1
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Real time scatterometry: a new metrology for in situ microelectronics process controlPESM2010 3rd workshop on Plasma Etch and Strip in Microelectronics, Mar 2010, grenoble, France
Communication dans un congrès
hal-00462257v1
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Gate patterning for ultimate CMOS devicesDPS, 24nd Symposium on Dry Process, 2002, Tokyo, Japan
Communication dans un congrès
hal-00481890v1
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XPS study on STI processesAVS 2004, 2004, United States
Communication dans un congrès
hal-00390556v1
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Characterisation of ultraviolet nanoimprint dedicated resistsMicroelectronic Engineering, 2007, 84, pp.967-972
Article dans une revue
hal-00397066v1
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Chemical analysis of deposits formed on the reactor walls during silicon and metal gate etching processesJournal of Vacuum Science and Technology, 2006, B 24,, pp.2191-2197
Article dans une revue
hal-00397056v1
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Characterization of resist-trimming processes by quasi in-situ x-ray photoelectron spectroscopyJournal of Vacuum Science and Technology, 2004, pp.B 22, 1869
Article dans une revue
hal-00384173v1
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Impact of HBr and Ar cure plasma treatments on 193nm photoresistsSPIE, advanced lithography, 2008, san jose, United States
Communication dans un congrès
hal-00400001v1
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Programmable frequency-bin quantum states in a nano-engineered silicon deviceNature Communications, 2023, 14 (1), pp.176. ⟨10.1038/s41467-022-35773-6⟩
Article dans une revue
hal-03997028v1
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Towards new plasma technologies for 22nm gate etch processes and beyondSPIE-AL, 2012, San Jose, CA, United States
Communication dans un congrès
hal-00808670v1
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Improving Etch Processes by Using Pulsed PlasmasAVS 58h international symposium, Oct 2011, Nashville, United States
Communication dans un congrès
hal-00647630v1
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Benefits of plasma treatments on critical dimension control and line width roughness transfer during gate patterningJournal of Vacuum Science and Technology, 2013, B31, pp.012205. ⟨10.1116/1.4773063⟩
Article dans une revue
hal-00904415v1
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Chemical topography analyses of photoresist patterns exposed to HBr/O2 and Cl2/O2 trimming plasma processesAVS, 50th International AVS Symposium & Topical Conferences, 2003, Baltimore, United States
Communication dans un congrès
hal-00488315v1
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Challenges in plasma etching for Nanoelectronics applications6émes Rencontres du CREMSI, 2003, Fuveau, France
Communication dans un congrès
hal-00481917v1
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Synchronized pulsed plasmas: potential process improvements for patterning technologies63rd Gaseous Electronic Conference and 7th International Conference on Reactive Plasmas, Oct 2010, Paris, France
Communication dans un congrès
hal-00625370v1
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Reduction of Plasma Induced Silicon-Recess During Gate Over-Etch Using Synchronous Pulsed PlasmasAVS 57th international symposium, Oct 2010, Albuquerque, United States
Communication dans un congrès
hal-00625366v1
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Patterning of Magnetic Tunneling Junction in reactive plasmasPlasma Etch and Strip in Microelectronics (PESM), 4th International Workshop, May 2011, Mechelen, Belgium
Communication dans un congrès
hal-00643924v1
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Impact of plasma and annealing treatments on 193nm photoresist Linewidth roughness and profile56th International AVS Symposium & Topical Conferences, Oct 2010, Albuquerque, United States
Communication dans un congrès
hal-00644011v1
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Development of plasma etching processes for high aspect ratio TSV with SF6/O2/HBr chemistryPlasma Etch and Strip in Microelectronics (PESM), 3rd International Workshop, 2010, Grenoble, France
Communication dans un congrès
hal-00643948v1
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Influence of the carrier wafer during GaN etching in Cl2 plasmaJournal of Vacuum Science & Technology A, 2022, ⟨10.1116/6.0001478⟩
Article dans une revue
hal-03618882v1
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