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Erwann Fourmond
63
Documents
Identifiants chercheurs
- erwann-fourmond
- 0000-0003-2832-5678
- IdRef : 071516778
- Google Scholar : https://scholar.google.fr/citations?user=Qrq9mAYAAAAJ
Présentation
INSA Lyon
Laboratoire INL, équipe [i-Lum, ](https://inl.cnrs.fr/ingenierie-et-conversion-de-lumiere-i-lum/)
[Groupe Photovoltaïque](https://inl.cnrs.fr/gp-photovoltaique/)
INSA Lyon
INL laboratory, [i-Lum Team, ](https://inl.cnrs.fr/ingenierie-et-conversion-de-lumiere-i-lum/)
[Photovoltaic Group ](https://inl.cnrs.fr/gp-photovoltaique/)
Publications
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Potential of hydrogenated microcrystalline silicon-germanium for low thermal budget near infrared sensorsSPIE Optics + Optoelectronics 2023, Jan 2023, San Fransisco, United States. pp.1241507, ⟨10.1117/12.2647554⟩
Communication dans un congrès
hal-04035697v1
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Highly Microcrystalline Phosphorous-doped Si:H Very Thin Films Deposited by HF-PECVDEMRS 2021 Fall meeting, European Materials Research Society, Sep 2021, online, France
Communication dans un congrès
hal-03366641v1
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Influence of Edge Recombinations on the Performance of Half-, Shingled- and Full Silicon Heterojunction Solar Cells37th European Photovoltaic Solar Energy Conference and Exhibition, Sep 2020, online, France. pp.282-285
Communication dans un congrès
hal-02983770v1
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Electrical Properties of Monocrystalline Thin Film Si for Solar Cells Fabricated By Rapid Vapor Deposition with Nano-Surface Controlling Double Layer Porous Si in H2236th ECS Meeting, Oct 2019, Atlanta (GA), United States
Communication dans un congrès
hal-02389859v1
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Understanding of the Influence of the Surface Defectivity on Silicon Heterojunction Cell Performance36th European Photovoltaic Solar Energy Conference and Exhibition, Sep 2019, Marseille, France. pp.558-563
Communication dans un congrès
hal-02328235v1
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Effect on compact-TiO2 by spray pyrolysis technique and its interface between TiO2/Si layer for tandem solar applicationThe 85th Electrochemical Society of Japan Spring Metting, Mar 2018, Tokyo, Japan
Communication dans un congrès
hal-02063845v1
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Nano structuration de pérovskite pour applications microélectroniqueJournées nationales du photovoltaïque 2018, Dec 2018, Dourdan, France
Communication dans un congrès
hal-02405623v1
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Light trapping in advanced solar cells: photonic crystals and disordered structuresPhotonics for Energy, 2015, Wuhan, China
Communication dans un congrès
hal-01489360v1
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Ultra-compact nanophotonic structures for down-conversion and down-shifting enhancementEurop. Material research Society EMRS, 2014, Lille, France
Communication dans un congrès
hal-01489818v1
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Lifetime degradation on n-type wafers with boron-diffused and SiO2/SiN-passivated surface4th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2014), Mar 2014, s-Hertogenbosch, Netherlands. pp.280-286, ⟨10.1016/j.egypro.2014.08.082⟩
Communication dans un congrès
hal-01060950v1
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USE OF AMORPHOUS HYDROGENATED SILICON CARBIDE AS A REAR-SIDE PASSIVATION LAYER FOR CRYSTALLINE SILICON SOLAR CELLS28th European Photovoltaic Solar Energy Conference, Sep 2013, Paris, France
Communication dans un congrès
hal-01890566v1
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Nanostructured down-converter module for photovoltaic applicationSPIE OPTO, Green Photonics, Feb 2013, San Francisco, United States. pp.86200G-86200G-8, ⟨10.1117/12.2003640⟩
Communication dans un congrès
hal-00809390v1
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The PROTERRA project : advanced processes using alternative raw materials for an economic production of high efficiency solar cells and modules28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013, 2013, Paris, France. paper 2DV.3.42, 1952-1956, ⟨10.4229/28thEUPVSEC2013-2DV.3.42⟩
Communication dans un congrès
hal-00908679v1
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Passivating Properties of Hydrogenated Amorphous Silicon Carbide Deposited by PECVD Technique for Photovoltaic Applications3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013), Mar 2013, Hameln, Germany. pp.823 - 832, ⟨10.1016/j.egypro.2013.07.352⟩
Communication dans un congrès
hal-01890554v1
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Down Converter Device Combining Rare-Earth Doped Thin Layer and Photonic Crystal for c-Si Based Solar Cell28th European Photovoltaic Solar Energy Conference and Exhibition, Sep 2013, Paris, France. pp.43 - 45, ⟨10.4229/28thEUPVSEC2013-1BO.11.2⟩
Communication dans un congrès
hal-00908631v1
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Electrical properties of boron, phosphorus and gallium co-doped siliconEnergy Procedia, Apr 2011, Freiburg, Germany. pp.4
Communication dans un congrès
hal-00601278v1
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Doping engineering to increase the material yield during crystallization of B and P compensated silicon25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, Sep 2010, Valencia, Spain. pp.1250 - 1253, ⟨10.4229/25thEUPVSEC2010-2BO.3.2⟩
Communication dans un congrès
hal-00595328v1
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Study of rear pecvd dielectrics stacks for industrial silicon solar cellsProc. of the 24th European PVSEC, Sep 2009, Hamburg, France. pp.4
Communication dans un congrès
hal-00593537v1
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New method for grain size characterization of a multi-crystalline silicon ingot24th European Photovoltaic Specialists Conference, Sep 2009, Hamburg, Germany. pp.4
Communication dans un congrès
hal-00551474v1
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SIOxNy – SINx DOUBLE ANTIREFLECTION LAYER FOR MULTICRYSTALLINE SILICON SOLAR CELLS24th European Photovoltaic Solar Energy Conference (PVSEC 2009), Sep 2009, Hambourg, Germany. pp.1636 - 1639, ⟨10.4229/24thEUPVSEC2009-2CV.2.59⟩
Communication dans un congrès
hal-01457852v1
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Impact of ammonia pretreatment of the silicon surface prior to the deposition of silicon nitride layer by pecvd23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. pp.1629-1632
Communication dans un congrès
hal-00546519v1
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a-Si:H/c-Si Heterojunction Solar Cells on 50 µm Thick Wafers With Rear Point Contacts23rd European Photovoltaic Solar Energy Conference and Exhibition, Jan 2008, Valencia, Spain
Communication dans un congrès
hal-02328386v1
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Rear passivation schemes for industrial silicon solar cellsProc. of 23rd European PVSC, Sep 2008, Valencia, Spain. pp.4, ⟨10.4229/23rdEUPVSEC2008-2CV.5.15⟩
Communication dans un congrès
hal-00593030v1
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Inductive Plasmas and Material Processing, Scientific and Technical Challenges for Industrial ProcessesConference proceedings, 2006, Tokyo, Japan. pp.709-713
Communication dans un congrès
hal-00145596v1
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Refining of metallurgical silicon for crystalline solar cells19th European Photovoltaic Solar Energy Conference, Jun 2004, Paris, France. pp.1017-1020
Communication dans un congrès
hal-00545537v1
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Inductive Plasma Process For Refining Of Solar Grade SiliconEPM 2003 4th International Conference on Electromagnetic Processing of Materials, Sep 2003, Lyon, France, France. pp.125--130
Communication dans un congrès
hal-00551473v1
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Influence of Surface Defectivity on the Performances of Silicon Heterojunction Solar CellsEuropean Photovoltaic Solar Energy Conference, Sep 2019, Marseille, France
Poster de conférence
hal-02321708v1
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Ingénierie nanophotonique pour cellule solaire tandem pérovskite/siliciumPoster de conférence hal-02066264v1 |
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Laser Ablation of Sub-Stoichiometric Silicon Oxide for Rear Side of PERC Thin Si Solar CellsPVSEC, Jun 2016, Munich, Germany
Poster de conférence
hal-02066902v1
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Impact of wafer quality on boron-diffused n-type bifacial solar cellsSiliconPV 2014, the 4th International Conference on Crystallin Silicon Photovoltaics, Mar 2014, s-Hertogenbosch, Netherlands. , 2014
Poster de conférence
hal-01489789v1
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PROCEDE DE DOPAGE D'UN MATÉRIAU SEMI-CONDUCTEURFrance, N° de brevet: WO 2012/007653 A1. 2012
Brevet
hal-01891851v1
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SILICON REFINING INSTALLATIONN° de brevet: US2008123715 (A1). EPM. 2008
Brevet
hal-00386319v1
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Silicon Refining InstallationPatent n° : US20080123715A1. 2008
Brevet
hal-00369740v1
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SILICON REFINING INSTALLATIONN° de brevet: EP1753695 (A2). EPM. 2007
Brevet
hal-00386318v1
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SILICON REFINING INSTALLATIONN° de brevet: FR2871151 (A1). EPM. 2005
Brevet
hal-00386317v1
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Design of porous silicon /PECVD SiO x and SiN x :H antireflection coatings for silicon solar cells2018
Pré-publication, Document de travail
hal-01706858v1
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Contribution au photovoltaïque de première génération : du matériau silicium aux couches diélectriquesElectronique. INSA de Lyon, 2011
HDR
tel-00660319v1
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