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Number of documents

56

Photovoltaïque et semiconducteurs


INSA Lyon

Laboratoire INL, équipe i-Lum,

Groupe Photovoltaïque


Journal articles23 documents

  • Ewelina Krawczak, Zdyb Agata, Slawomir Gulkowski, Alain Fave, Erwann Fourmond. Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications. E3S Web of Conferences, EDP Sciences, 2017, 22, pp.00090. ⟨10.1051/e3sconf/20172200090⟩. ⟨hal-02060664⟩
  • L. Remache, T. Nychyporuk, N. Guermit, E. Fourmond, A. Mahdjoub, et al.. Optical properties of porous Si/PECVD SiNX:H reflector on single crystalline Si for solar cells. Materials Science-Poland, De Gruyter Open, 2016, 34 (1), pp.94-100. ⟨10.1515/msp-2016-0054⟩. ⟨hal-01804063⟩
  • Félix Gerenton, Fabien Mandorlo, Erwann Fourmond, Marine Le Coz, Danièle Blanc-Pelissier, et al.. Laser ablation compatible substoichiometric SiO x /SiN y passivating rear side mirror for passivated emitter and rear thin-film crystalline silicon solar cells. Journal of Vacuum Science and Technology A, American Vacuum Society, 2016, 34 (5), ⟨10.1116/1.4958985⟩. ⟨hal-01804809⟩
  • Corina Barbos, Danièle Blanc-Pelissier, Alain Fave, Elisabeth Blanquet, Alexandre Crisci, et al.. Characterization of Al2O3 Thin Films Prepared by Thermal ALD. Energy Procedia, Elsevier, 2015, 77, ⟨10.1016/j.egypro.2015.07.080⟩. ⟨hal-01218293⟩
  • Maxime Forster, J. Degoulange, R. Einhaus, G. Galbiati, E. Rougieux, et al.. Impact of compensation on boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells. Solar Energy Materials and Solar Cells, Elsevier, 2014, 120, pp.390-395. ⟨hal-01490336⟩
  • M. Forster, Fiacre Rougieux, A. Cuevas, B. Dehestru, A. Thomas, et al.. Incomplete Ionization and Carrier Mobility in Compensated p -Type and n-Type Silicon. IEEE Journal of Photovoltaics, IEEE, 2013, 3 (1), pp.108 - 113. ⟨10.1109/JPHOTOV.2012.2210032⟩. ⟨hal-01890802⟩
  • Maxime Forster, Bastien Dehestru, Antoine Thomas, Erwann Fourmond, Roland Einhaus, et al.. Compensation engineering for uniform n-type silicon ingots. Solar Energy Materials and Solar Cells, Elsevier, 2013, 111, pp.146-152. ⟨10.1016/j.solmat.2013.01.001⟩. ⟨hal-01890401⟩
  • Maxime Forster, Erwann Fourmond, Fiacre E. Rougieux, Andres Cuevas, R. Gotoh, et al.. Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron. Applied Physics Letters, American Institute of Physics, 2012, 100 (4), ⟨10.1063/1.3680205⟩. ⟨hal-01890459⟩
  • M. Forster, A. Cuevas, E. Fourmond, F Rougieux, M. Lemiti. Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon. Journal of Applied Physics, American Institute of Physics, 2012, 111 (4), pp.043701. ⟨10.1063/1.3686151⟩. ⟨hal-02047842⟩
  • Maxime Forster, Erwann Fourmond, Roland Einhaus, Hubert Lauvray, Jed Kraiem, et al.. Ga co-doping in Cz-grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications. physica status solidi (c), Wiley, 2011, 8 (3), pp.678-681. ⟨10.1002/pssc.201000330⟩. ⟨hal-02333385⟩
  • L. Remache, A. Mahdjoub, E. Fourmond, J. Dupuis, M. Lemiti. Design of porous silicon /PECVD SiO x and SiN x :H antireflection coatings for silicon solar cells. physica status solidi (c), Wiley, 2011, 8 (6), pp.1893 - 1897. ⟨10.1002/pssc.201000110⟩. ⟨hal-01706858⟩
  • L. Remache, A. Mahdjoub, E. Fourmond, J. Dupuis, M. Lemiti. Influence of PECVD SiOx and SiNx:H films on optical and passivation properties of antireflective porous silicon coatings for silicon solar cells. physica status solidi (c), Wiley, 2011, 8 (6), pp.1893 - 1897. ⟨10.1002/pssc.201000110⟩. ⟨hal-01890411⟩
  • J. Dupuis, E. Fourmond, D. Ballutaud, N. Bererd, M. Lemiti. Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition. Thin Solid Films, Elsevier, 2010, 519, pp.1325-1333. ⟨10.1016/j.tsf.2010.09.036⟩. ⟨in2p3-00734027⟩
  • J.-F. Lelièvre, E. Fourmond, A. Kaminski, Olivier Palais, D. Ballutaud, et al.. Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon. Solar Energy Materials and Solar Cells, Elsevier, 2009, 93 (8), pp.1281 - 1289. ⟨10.1016/j.solmat.2009.01.023⟩. ⟨hal-01706842⟩
  • Julien Dupuis, Erwann Fourmond, Jean-François Lelièvre, Dominique Ballutaud, Mustapha Lemiti. Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation. Thin Solid Films, Elsevier, 2008, pp.6954-6958. ⟨10.1016/j.tsf.2007.12.026⟩. ⟨hal-00951444⟩
  • I. Jozwik, P. Papet, A. Kaminski, E. Fourmond, F. Calmon, et al.. Interdigitated back contact solar cells with SiO2 and SiN back surface passivation. Journal of Non-Crystalline Solids, Elsevier, 2008, 354 (35-39), pp.4341-4344. ⟨10.1016/j.jnoncrysol.2008.06.083⟩. ⟨hal-02328336⟩
  • J.-F. Lelièvre, H. Rodriguez, E. Fourmond, S. Quoizola, M. Lipinski, et al.. Electro-optical characterisation for the control of silicon nanocrystals embedded in SiNx:H films. physica status solidi (c), Wiley, 2007, 4 (4), pp.1554-1559. ⟨hal-01962038⟩
  • M. Lipiński, A. Kaminski, J.-F. Lelièvre, M. Lemiti, E. Fourmond, et al.. Investigation of graded index SiOxNy antireflection coating for silicon solar cell manufacturing. physica status solidi (c), Wiley, 2007, 4 (4), pp.1566-1569. ⟨10.1002/pssc.200674143⟩. ⟨hal-02328307⟩
  • J-F Lelièvre, H Rodriguez, E. Fourmond, S Quoizola, M. Lipinski, et al.. Electro-optical characterisation for the control of silicon nanocrystals embedded in SiNx:H films. physica status solidi (c), Wiley, 2007, 4 (4), pp.1554 - 1559. ⟨10.1002/pssc.200674142⟩. ⟨hal-01890307⟩
  • E. Fourmond, M. Lemiti, C. Trassy, A. Laugier. MICROWAVE PECVD SYSTEM FOR SiNx:H ANTIREFLECTION COATINGS AND HYDROGEN PASSIVATION ON MULTICRYSTALLINE SILICON. High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes), Begell House, 2003, 7 (2), pp.10. ⟨10.1615/HighTempMatProc.v7.i2.130⟩. ⟨hal-02328295⟩
  • E. Fourmond, R. Bilyalov, E. van Kerschaver, M. Lemiti, J. Poortmans, et al.. Comparison between SiN x :H and hydrogen passivation of electromagnetically casted multicrystalline silicon material. Solar Energy Materials and Solar Cells, Elsevier, 2002, 72 (1-4), pp.353 - 359. ⟨10.1016/S0927-0248(01)00183-0⟩. ⟨hal-02328273⟩
  • Erwann Fourmond, Gilles Dennler, Rémi Monna, Mustapha Lemiti, Alain Fave, et al.. UVCVD silicon nitride passivation and ARC layers for multicrystalline solar cells. Solar Energy Materials and Solar Cells, Elsevier, 2001, 65 (1-4), pp.297-301. ⟨hal-01974266⟩
  • Z.M. Baccar, N. Jaffrezic-Renault, E. Fourmond, M. Lemiti, F.F. Grekov. Influence of the Aminated Conditions on the pH Sensitivity of Silica and Amorphous Silicon Film. Journal of the European Ceramic Society, Elsevier, 1997, 17 (15-16), pp.202 - 2024. ⟨hal-01974244⟩

Conference papers23 documents

  • Ryotaro Shibahara, Kei Hasegawa, Alain Fave, Erwann Fourmond, Suguru Noda, et al.. Electrical Properties of Monocrystalline Thin Film Si for Solar Cells Fabricated By Rapid Vapor Deposition with Nano-Surface Controlling Double Layer Porous Si in H2. 236th ECS Meeting, Oct 2019, Atlanta (GA), United States. ⟨hal-02389859⟩
  • V Giglia, J. Veirman, R. Varache, E. Fourmond. Understanding of the Influence of the Surface Defectivity on Silicon Heterojunction Cell Performance. 36th European Photovoltaic Solar Energy Conference and Exhibition, Sep 2019, Marseille, France. pp.558-563. ⟨hal-02328235⟩
  • Florian Berry, Hai Son Nguyen, Erwann Fourmond, C. Seassal. Nano structuration de pérovskite pour applications microélectronique. Journées nationales du photovoltaïque 2018, Dec 2018, Dourdan, France. ⟨hal-02405623⟩
  • Methawee Nukunudompanich, Kazuma Suzuki, Kei Hasegawa, Erwann Fourmond, Alain Fave, et al.. Effect on compact-TiO2 by spray pyrolysis technique and its interface between TiO2/Si layer for tandem solar application. The 85th Electrochemical Society of Japan Spring Metting, Mar 2018, Tokyo, Japan. ⟨hal-02063845⟩
  • Christian Seassal, He Ding, Romain Champory, Loïc Lalouat, Emmanuel Drouard, et al.. Light trapping in advanced solar cells: photonic crystals and disordered structures. Photonics for Energy, 2015, Wuhan, China. ⟨hal-01489360⟩
  • Thierry Deschamps, Emmanuel Drouard, A. Pereira, Romain Peretti, Loic Lalouat, et al.. Ultra-compact nanophotonic structures for down-conversion and down-shifting enhancement. Europ. Material research Society EMRS, 2014, Lille, France. ⟨hal-01489818⟩
  • Clémentine Renevier, Erwann Fourmond, Maxime Forster, Stéphanie Parola, Marine Le Coz, et al.. Lifetime degradation on n-type wafers with boron-diffused and SiO2/SiN-passivated surface. 4th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2014), Mar 2014, s-Hertogenbosch, Netherlands. pp.280-286, ⟨10.1016/j.egypro.2014.08.082⟩. ⟨hal-01060950⟩
  • Thierry Deschamps, Antoine Guille, Emmanuel Drouard, Radoslaw Mazurczyk, Régis Orobtchouk, et al.. Nanostructured down-converter module for photovoltaic application. SPIE OPTO, Green Photonics, Feb 2013, San Francisco, United States. pp.86200G-86200G-8, ⟨10.1117/12.2003640⟩. ⟨hal-00809390⟩
  • Thierry Deschamps, Emmanuel Drouard, Romain Peretti, Loïc Lalouat, Erwann Fourmond, et al.. Down Converter Device Combining Rare-Earth Doped Thin Layer and Photonic Crystal for c-Si Based Solar Cell. 28th European Photovoltaic Solar Energy Conference and Exhibition, Sep 2013, Paris, France. pp.43 - 45, ⟨10.4229/28thEUPVSEC2013-1BO.11.2⟩. ⟨hal-00908631⟩
  • N. Le Quang, M. Gauthier, M. Gerard, S. Williatte, A.M. Rambaud, et al.. The PROTERRA project : advanced processes using alternative raw materials for an economic production of high efficiency solar cells and modules. 28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013, 2013, Paris, France. paper 2DV.3.42, 1952-1956, ⟨10.4229/28thEUPVSEC2013-2DV.3.42⟩. ⟨hal-00908679⟩
  • Aurélien Gaufrès, Erwann Fourmond, Frédéric Husser, M. Lemiti. Passivating Properties of Hydrogenated Amorphous Silicon Carbide Deposited by PECVD Technique for Photovoltaic Applications. 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013), Mar 2013, Hameln, Germany. pp.823 - 832, ⟨10.1016/j.egypro.2013.07.352⟩. ⟨hal-01890554⟩
  • Aurélien Gaufrès, Frédéric Husser, Erwann Fourmond, Rémi Monna, M. Lemiti. USE OF AMORPHOUS HYDROGENATED SILICON CARBIDE AS A REAR-SIDE PASSIVATION LAYER FOR CRYSTALLINE SILICON SOLAR CELLS. 28th European Photovoltaic Solar Energy Conference, Sep 2013, Paris, France. ⟨hal-01890566⟩
  • Erwann Fourmond, Maxime Forster, Roland Einhaus, Hubert Lauvray. Electrical properties of boron, phosphorus and gallium co-doped silicon. Energy Procedia, Apr 2011, Freiburg, Germany. pp.4. ⟨hal-00601278⟩
  • Maxime Forster, Erwann Fourmond, Roland Einhaus, Hubert Lauvray, Jed Kraiem, et al.. Doping engineering to increase the material yield during crystallization of B and P compensated silicon. 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, Sep 2010, Valencia, Spain. pp.1250 - 1253, ⟨10.4229/25thEUPVSEC2010-2BO.3.2⟩. ⟨hal-00595328⟩
  • Julien Dupuis, J.-F. Lelièvre, Erwann Fourmond, Virginie Mong-The Yen, O. Nichiporuk, et al.. SIOxNy – SINx DOUBLE ANTIREFLECTION LAYER FOR MULTICRYSTALLINE SILICON SOLAR CELLS. 24th European Photovoltaic Solar Energy Conference (PVSEC 2009), Sep 2009, Hambourg, Germany. pp.1636 - 1639, ⟨10.4229/24thEUPVSEC2009-2CV.2.59⟩. ⟨hal-01457852⟩
  • Julien Dupuis, Erwann Fourmond, Virginie Mong-The Yen, Oleksiy Nichiporuk, Mathias Greffioz, et al.. Study of rear pecvd dielectrics stacks for industrial silicon solar cells. Proc. of the 24th European PVSEC, Sep 2009, Hamburg, France. pp.4. ⟨hal-00593537⟩
  • Maxime Forster, Erwann Fourmond, Jean-Marie Lebrun, Roland Einhaus, Jed Kraiem, et al.. New method for grain size characterization of a multi-crystalline silicon ingot. 24th European Photovoltaic Specialists Conference, Sep 2009, Hamburg, Germany. pp.4. ⟨hal-00551474⟩
  • Julien Dupuis, Erwann Fourmond, Oleksiy Nichiporuk, Fabien Gibaja, Mustapha Lemiti. Rear passivation schemes for industrial silicon solar cells. Proc. of 23rd European PVSC, Sep 2008, Valencia, Spain. pp.4, ⟨10.4229/23rdEUPVSEC2008-2CV.5.15⟩. ⟨hal-00593030⟩
  • Erwann Fourmond, Julien Dupuis, F. Marcq, C. Dubois, Mustapha Lemiti. Impact of ammonia pretreatment of the silicon surface prior to the deposition of silicon nitride layer by pecvd. 23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. pp.1629-1632. ⟨hal-00546519⟩
  • S Amtablian, M Labrune, P Carroy, J. Dupuis, E. Fourmond, et al.. a-Si:H/c-Si Heterojunction Solar Cells on 50 µm Thick Wafers With Rear Point Contacts. 23rd European Photovoltaic Solar Energy Conference and Exhibition, Jan 2008, Valencia, Spain. ⟨hal-02328386⟩
  • C. Trassy, Y. Delannoy, E. Fourmond, C. Ndzogha, Dominique Pelletier, et al.. Inductive Plasmas and Material Processing, Scientific and Technical Challenges for Industrial Processes. Conference proceedings, 2006, Tokyo, Japan. pp.709-713. ⟨hal-00145596⟩
  • Erwann Fourmond, Cyrille Ndzogha, David Pelletier, Yves Delannoy, Christian Trassy, et al.. Refining of metallurgical silicon for crystalline solar cells. 19th European Photovoltaic Solar Energy Conference, Jun 2004, Paris, France. pp.1017-1020. ⟨hal-00545537⟩
  • Alexis Yvon, Erwann Fourmond, C. Ndzogha, Yves Delannoy, Christian Trassy. Inductive Plasma Process For Refining Of Solar Grade Silicon. EPM 2003 4th International Conference on Electromagnetic Processing of Materials, Sep 2003, Lyon, France, France. pp.125--130. ⟨hal-00551473⟩

Poster communications4 documents

  • V Giglia, J. Veirman, R. Varache, E. Fourmond. Influence of Surface Defectivity on the Performances of Silicon Heterojunction Solar Cells. European Photovoltaic Solar Energy Conference, Sep 2019, Marseille, France. ⟨hal-02321708⟩
  • Florian Berry, Hai Son Nguyen, Erwann Fourmond, C. Seassal. Ingénierie nanophotonique pour cellule solaire tandem pérovskite/silicium. Journées Nationale du Photovoltaïque 2017, Dec 2017, Dourdan, France. ⟨hal-02066264⟩
  • Félix Gérenton, Fabien Mandorlo, Erwann Fourmond, Mustapha Lemiti. Laser Ablation of Sub-Stoichiometric Silicon Oxide for Rear Side of PERC Thin Si Solar Cells. PVSEC, Jun 2016, Munich, Germany. ⟨hal-02066902⟩
  • Maxime Forster, O. Nichiporuk, J. Degoulange, E. Picard, B. Semmache, et al.. Impact of wafer quality on boron-diffused n-type bifacial solar cells. SiliconPV 2014, the 4th International Conference on Crystallin Silicon Photovoltaics, Mar 2014, s-Hertogenbosch, Netherlands. 2014. ⟨hal-01489789⟩

Patents5 documents

  • Maxime Forster, Erwann Fourmond, Jacky Stadler, Roland Einhaus, Hubert Lauvray. PROCEDE DE DOPAGE D'UN MATÉRIAU SEMI-CONDUCTEUR. France, N° de brevet: WO 2012/007653 A1. 2012. ⟨hal-01891851⟩
  • Y. Caratini, Y. Delannoy, E. Fourmond, C. Ndzogha, C. Trassy, et al.. Silicon Refining Installation. Patent n° : US20080123715A1. 2008. ⟨hal-00369740⟩
  • C. Trassy, Y. Delannoy, E. Fourmond, C. Ndzogha, G. Baluais, et al.. SILICON REFINING INSTALLATION. N° de brevet: US2008123715 (A1). EPM. 2008. ⟨hal-00386319⟩
  • C. Trassy, Y. Delannoy, E. Fourmond, C. Ndzogha, G. Baluais, et al.. SILICON REFINING INSTALLATION. N° de brevet: EP1753695 (A2). EPM. 2007. ⟨hal-00386318⟩
  • C. Trassy, Y. Delannoy, E. Fourmond, C. Ndzogha, G. Baluais, et al.. SILICON REFINING INSTALLATION. N° de brevet: FR2871151 (A1). EPM. 2005. ⟨hal-00386317⟩

Habilitation à diriger des recherches1 document

  • Erwann Fourmond. Contribution au photovoltaïque de première génération : du matériau silicium aux couches diélectriques. Electronique. INSA de Lyon, 2011. ⟨tel-00660319⟩