Mots-clés

Identifiants chercheur

Nombre de documents

37

Photovoltaïque et semiconducteurs


Article dans une revue15 documents

  • L. Remache, T. Nychyporuk, N. Guermit, E. Fourmond, A. Mahdjoub, et al.. Optical properties of porous Si/PECVD SiNX:H reflector on single crystalline Si for solar cells. Materials Science-Poland, De Gruyter Open, 2016, 34 (1), pp.94-100. 〈10.1515/msp-2016-0054〉. 〈hal-01804063〉
  • Corina Barbos, Danièle Blanc-Pelissier, Alain Fave, Elisabeth Blanquet, Alexandre Crisci, et al.. Characterization of Al2O3 Thin Films Prepared by Thermal ALD. Energy Procedia, Elsevier, 2015, 77, 〈10.1016/j.egypro.2015.07.080〉. 〈hal-01218293〉
  • Clémentine Renevier, Erwann Fourmond, Maxime Forster, Stéphanie Parola, Marine Le Coz, et al.. Lifetime degradation on n-type wafers with boron-diffused and SiO2/SiN-passivated surface. Energy Procedia, Elsevier, 2014, 55C, pp.280-286. 〈10.1016/j.egypro.2014.08.082〉. 〈hal-01060950〉
  • Maxime Forster, J. Degoulange, R. Einhaus, G. Galbiati, E. Rougieux, et al.. Impact of compensation on boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells. Solar Energy Materials and Solar Cells, Elsevier, 2014, 120, pp.390-395. 〈hal-01490336〉
  • Aurélien Gaufrès, Erwann Fourmond, Frédéric Husser, M. Lemiti. Passivating Properties of Hydrogenated Amorphous Silicon Carbide Deposited by PECVD Technique for Photovoltaic Applications. Energy Procedia, Elsevier, 2013, 38, pp.823 - 832. 〈10.1016/j.egypro.2013.07.352〉. 〈hal-01890554〉
  • M. Forster, Fiacre Rougieux, A. Cuevas, B. Dehestru, A. Thomas, et al.. Incomplete Ionization and Carrier Mobility in Compensated p -Type and n-Type Silicon. IEEE JOURNAL OF PHOTOVOLTAICS, 2013, 3 (1), pp.108 - 113. 〈10.1109/JPHOTOV.2012.2210032〉. 〈hal-01890802〉
  • Maxime Forster, Erwann Fourmond, Fiacre E. Rougieux, Andres Cuevas, R. Gotoh, et al.. Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron. Applied Physics Letters, American Institute of Physics, 2012, 100 (4), 〈10.1063/1.3680205〉. 〈hal-01890459〉
  • L. Remache, A. Mahdjoub, E. Fourmond, J. Dupuis, M. Lemiti. Design of porous silicon /PECVD SiO x and SiN x :H antireflection coatings for silicon solar cells. physica status solidi (c), Wiley, 2011, 8 (6), pp.1893 - 1897. 〈10.1002/pssc.201000110〉. 〈hal-01706858〉
  • L. Remache, A. Mahdjoub, E. Fourmond, J. Dupuis, M. Lemiti. Influence of PECVD SiOx and SiNx:H films on optical and passivation properties of antireflective porous silicon coatings for silicon solar cells. physica status solidi (c), Wiley, 2011, 8 (6), pp.1893 - 1897. 〈10.1002/pssc.201000110〉. 〈hal-01890411〉
  • J. Dupuis, E. Fourmond, D. Ballutaud, N. Bererd, M. Lemiti. Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition. Thin Solid Films, Elsevier, 2010, 519, pp.1325-1333. 〈10.1016/j.tsf.2010.09.036〉. 〈in2p3-00734027〉
  • J.-F. Lelièvre, E. Fourmond, A. Kaminski, O. Palais, D. Ballutaud, et al.. Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon. Solar Energy Materials and Solar Cells, Elsevier, 2009, 93 (8), pp.1281 - 1289. 〈10.1016/j.solmat.2009.01.023〉. 〈hal-01706842〉
  • Julien Dupuis, Erwann Fourmond, Jean-François Lelièvre, Dominique Ballutaud, Mustapha Lemiti. Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation. Thin Solid Films, Elsevier, 2008, pp.6954-6958. 〈10.1016/j.tsf.2007.12.026〉. 〈hal-00951444〉
  • J-F Lelièvre, H Rodriguez, E. Fourmond, S Quoizola, M. Lipinski, et al.. Electro-optical characterisation for the control of silicon nanocrystals embedded in SiNx:H films. physica status solidi (c), Wiley, 2007, 4 (4), pp.1554 - 1559. 〈10.1002/pssc.200674142〉. 〈hal-01890307〉
  • J.-F. Lelièvre, H. Rodriguez, E. Fourmond, S. Quoizola, M. Lipinski, et al.. Electro-optical characterisation for the control of silicon nanocrystals embedded in SiNx:H films. physica status solidi (c), Wiley, 2007, 4 (4), pp.1554-1559. 〈hal-01962038〉
  • Erwann Fourmond, Gilles Dennler, Rémi Monna, Mustapha Lemiti, Alain Fave, et al.. UVCVD silicon nitride passivation and ARC layers for multicrystalline solar cells. Solar Energy Materials and Solar Cells, Elsevier, 2001, 65 (1-4), pp.297-301. 〈hal-01974266〉

Communication dans un congrès15 documents

  • Christian Seassal, He Ding, Romain Champory, Loïc Lalouat, Emmanuel Drouard, et al.. Light trapping in advanced solar cells: photonic crystals and disordered structures. Photonics for Energy, 2015, Wuhan, China. 2015. 〈hal-01489360〉
  • Thierry Deschamps, Emmanuel Drouard, A. Pereira, Romain Peretti, Loic Lalouat, et al.. Ultra-compact nanophotonic structures for down-conversion and down-shifting enhancement. Europ. Material research Society EMRS, 2014, Lille, France. 2014. 〈hal-01489818〉
  • N. Le Quang, M. Gauthier, M. Gerard, S. Williatte, A.M. Rambaud, et al.. The PROTERRA project : advanced processes using alternative raw materials for an economic production of high efficiency solar cells and modules. 28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013, 2013, Paris, France. paper 2DV.3.42, 1952-1956, 2013, 〈10.4229/28thEUPVSEC2013-2DV.3.42〉. 〈hal-00908679〉
  • Aurélien Gaufrès, Frédéric Husser, Erwann Fourmond, Rémi Monna, M. Lemiti. USE OF AMORPHOUS HYDROGENATED SILICON CARBIDE AS A REAR-SIDE PASSIVATION LAYER FOR CRYSTALLINE SILICON SOLAR CELLS. 28th European Photovoltaic Solar Energy Conference, Sep 2013, Paris, France. 〈hal-01890566〉
  • Thierry Deschamps, Antoine Guille, Emmanuel Drouard, Radoslaw Mazurczyk, Régis Orobtchouk, et al.. Nanostructured down-converter module for photovoltaic application. SPIE OPTO, Green Photonics, Feb 2013, San Francisco, United States. SPIE OPTO, 8620, pp.86200G-86200G-8, 2013, 〈10.1117/12.2003640〉. 〈hal-00809390〉
  • Thierry Deschamps, Emmanuel Drouard, Romain Peretti, Loïc Lalouat, Erwann Fourmond, et al.. Down Converter Device Combining Rare-Earth Doped Thin Layer and Photonic Crystal for c-Si Based Solar Cell. 28th European Photovoltaic Solar Energy Conference and Exhibition, Sep 2013, Paris, France. proceeding of 28th European Photovoltaic Solar Energy Conference and Exhibition : Novel Materials and Concepts for Modules, Novel Materials and Concepts for Modules, pp.43 - 45, 2013, 〈10.4229/28thEUPVSEC2013-1BO.11.2〉. 〈hal-00908631〉
  • Erwann Fourmond, Maxime Forster, Roland Einhaus, Hubert Lauvray. Electrical properties of boron, phosphorus and gallium co-doped silicon. Energy Procedia, Apr 2011, Freiburg, Germany. Energy Procedia, pp.4, 2011. 〈hal-00601278〉
  • Maxime Forster, Erwann Fourmond, Roland Einhaus, Hubert Lauvray, Jed Kraiem, et al.. Doping engineering to increase the material yield during crystallization of B and P compensated silicon. 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, Sep 2010, Valencia, Spain. Proceedings of the 25st European Photovoltaic Solar Energy Conference, pp.1250 - 1253, 2010, 〈10.4229/25thEUPVSEC2010-2BO.3.2〉. 〈hal-00595328〉
  • Maxime Forster, Erwann Fourmond, Jean-Marie Lebrun, Roland Einhaus, Jed Kraiem, et al.. New method for grain size characterization of a multi-crystalline silicon ingot. 24th European Photovoltaic Specialists Conference, Sep 2009, Hamburg, Germany. Proc. of the 24th European PVSEC, pp.4, 2009. 〈hal-00551474〉
  • Julien Dupuis, Erwann Fourmond, Virginie Mong-The Yen, Oleksiy Nichiporuk, Mathias Greffioz, et al.. Study of rear pecvd dielectrics stacks for industrial silicon solar cells. Proc. of the 24th European PVSEC, Sep 2009, Hamburg, France. Proc. of the 24th European PVSEC, pp.4, 2009. 〈hal-00593537〉
  • Julien Dupuis, Erwann Fourmond, Oleksiy Nichiporuk, Fabien Gibaja, Mustapha Lemiti. Rear passivation schemes for industrial silicon solar cells. Proc. of 23rd European PVSC, Sep 2008, Valencia, Spain. Proc. of 23rd European PVSC, pp.4, 2008, 〈10.4229/23rdEUPVSEC2008-2CV.5.15〉. 〈hal-00593030〉
  • Erwann Fourmond, Julien Dupuis, F. Marcq, C. Dubois, Mustapha Lemiti. Impact of ammonia pretreatment of the silicon surface prior to the deposition of silicon nitride layer by pecvd. 23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. Proceedings of the 23rd European Photovoltaic Solar Energy Conference, pp.1629-1632, 2008. 〈hal-00546519〉
  • C. Trassy, Y. Delannoy, E. Fourmond, C. Ndzogha, Dominique Pelletier, et al.. Inductive Plasmas and Material Processing, Scientific and Technical Challenges for Industrial Processes. Conference proceedings, 2006, Tokyo, Japan. Isij, pp.709-713, 2006. 〈hal-00145596〉
  • Erwann Fourmond, Cyrille Ndzogha, David Pelletier, Yves Delannoy, Christian Trassy, et al.. Refining of metallurgical silicon for crystalline solar cells. 19th European Photovoltaic Solar Energy Conference, Jun 2004, Paris, France. pp.1017-1020, 2004. 〈hal-00545537〉
  • Alexis Yvon, Erwann Fourmond, C. Ndzogha, Yves Delannoy, Christian Trassy. Inductive Plasma Process For Refining Of Solar Grade Silicon. EPM 2003 4th International Conference on Electromagnetic Processing of Materials, Sep 2003, Lyon, France, France. Forum Editions, pp.125--130, 2003. 〈hal-00551473〉

Poster1 document

  • Maxime Forster, O. Nichiporuk, J. Degoulange, E. Picard, B. Semmache, et al.. Impact of wafer quality on boron-diffused n-type bifacial solar cells. SiliconPV 2014, the 4th International Conference on Crystallin Silicon Photovoltaics, Mar 2014, s-Hertogenbosch, Netherlands. 2014, 〈http://2014.siliconpv.com/cms/home.html〉. 〈hal-01489789〉

Brevet5 documents

  • Maxime Forster, Erwann Fourmond, Jacky Stadler, Roland Einhaus, Hubert Lauvray. PROCEDE DE DOPAGE D'UN MATÉRIAU SEMI-CONDUCTEUR. France, N° de brevet: WO 2012/007653 A1. 2012. 〈hal-01891851〉
  • C. Trassy, Y. Delannoy, E. Fourmond, C. Ndzogha, G. Baluais, et al.. SILICON REFINING INSTALLATION. N° de brevet: US2008123715 (A1). EPM. 2008. 〈hal-00386319〉
  • Y. Caratini, Y. Delannoy, E. Fourmond, C. Ndzogha, C. Trassy, et al.. Silicon Refining Installation. Patent n° : US20080123715A1. 2008. 〈hal-00369740〉
  • C. Trassy, Y. Delannoy, E. Fourmond, C. Ndzogha, G. Baluais, et al.. SILICON REFINING INSTALLATION. N° de brevet: EP1753695 (A2). EPM. 2007. 〈hal-00386318〉
  • C. Trassy, Y. Delannoy, E. Fourmond, C. Ndzogha, G. Baluais, et al.. SILICON REFINING INSTALLATION. N° de brevet: FR2871151 (A1). EPM. 2005. 〈hal-00386317〉

HDR1 document

  • Erwann Fourmond. Contribution au photovoltaïque de première génération : du matériau silicium aux couches diélectriques. Electronique. INSA de Lyon, 2011. 〈tel-00660319〉