Eric TOURNIE

347

Documents

Publications

	Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates Stefano Soresi , Mattia da Lisca , Claire Besancon , Nicolas Vaissiere , Alexandre Larrue EPJ Photovoltaics, 2023, WCPEC-8: State of the Art and Developments in Photovoltaics, 14, pp.1. ⟨10.1051/epjpv/2022027⟩ Article dans une revue hal-03931835v1
	Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying Audrey Gilbert , Michel Ramonda , Laurent Cerutti , Charles Cornet , Gilles Patriarche Advanced Optical Materials, 2023, 11 (15), ⟨10.1002/adom.202203050⟩ Article dans une revue hal-04107444v1
	Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides Andres Remis , Laura Monge-Bartolome , Michele Paparella , Audrey Gilbert , Guilhem Boissier Light: Science and Applications, 2023, 12, pp.150. ⟨10.1038/s41377-023-01185-4⟩ Article dans une revue hal-04136332v1
	Quantum cascade lasers monolithically integrated on germanium K. Kinjalk , A. Gilbert , A. Remis , Z. Loghmari , L. Cerutti Optics Express, 2022, 30 (25), pp.45259. ⟨10.1364/OE.472473⟩ Article dans une revue hal-04260106v1
	Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates Eric Tournié , Laura Monge Bartolome , Marta Rio Calvo , Zeineb Loghmari , Daniel Díaz-Thomas Light: Science and Applications, 2022, 11, ⟨10.1038/s41377-022-00850-4⟩ Article dans une revue hal-03684843v1
	Analysis of the Optical Coupling Between GaSb Diode Lasers and Passive Waveguides: A Step Toward Monolithic Integration on Si Platforms Michele Paparella , Laura Monge Bartolome , Jean-Baptiste Rodriguez , Laurent Cerutti , Marco Grande IEEE Photonics Journal, 2022, 14, pp.6651206. ⟨10.1109/jphot.2022.3203593⟩ Article dans une revue hal-03779758v1
	Characterization and Simulation of AlGaAsSb/GaSb Tandem Solar Cell Lucas Gavotto , Joanna Kret , S. Parola , Frédéric Martinez , Yves Rouillard IEEE Journal of Photovoltaics, 2022, pp.1-8. ⟨10.1109/JPHOTOV.2022.3164690⟩ Article dans une revue hal-03695407v1
	Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon Marta Rio Calvo , Jean-Baptiste Rodriguez , Charles Cornet , Laurent Cerutti , Michel Ramonda Advanced Electronic Materials, 2022, 8 (1), pp.2100777. ⟨10.1002/aelm.202100777⟩ Article dans une revue hal-03404002v1
	Impact of the ridge etching‐depth on GaSb‐based laser diodes Laura Monge‐bartolome , Laurent Cerutti , Eric Tournié Electronics Letters, 2021, ⟨10.1049/ell2.12392⟩ Article dans une revue hal-03472735v1
	Thermal performance of GaInSb quantum well lasers for silicon photonics applications C. R. Fitch , G. W. Read , I. P. Marko , D. A. Duffy , L Cerutti Applied Physics Letters, 2021, 118 (10), pp.101105. ⟨10.1063/5.0042667⟩ Article dans une revue hal-03184764v1
	Quantum well interband semiconductor lasers highly tolerant to dislocations Laurent Cerutti , Daniel A Díaz Thomas , Jean-Baptiste Rodriguez , Marta Rio Calvo , Gilles Patriarche Optica, 2021, 8 (11), pp.1397-1402. ⟨10.1364/optica.438272⟩ Article dans une revue hal-03417026v1
	Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells J. Kret , J. Tournet , S. Parola , F. Martinez , D. Chemisana Solar Energy Materials and Solar Cells, 2021, 219, pp.110795. ⟨10.1016/j.solmat.2020.110795⟩ Article dans une revue hal-02951928v1
	GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates Laura Monge-Bartolome , Bei Shi , Billy Lai , Guilhem Boissier , Laurent Cerutti Optics Express, 2021, 29 (7), pp.11268-11276. ⟨10.1364/oe.419396⟩ Article dans une revue hal-03184763v1
	Near-Field Thermophotovoltaic Conversion with High Electrical Power Density and Efficiency above 14% Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié Nano Letters, 2021, 21 (11), pp.4524-4529. ⟨10.1021/acs.nanolett.0c04847⟩ Article dans une revue hal-03255719v1
	Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays Gabin Grégoire , Mohammed Zeghouane , Curtis Goosney , Nebile Isik Goktas , Philipp Staudinger Crystal Growth & Design, 2021, 21 (9), pp.5158-5163. ⟨10.1021/acs.cgd.1c00518⟩ Article dans une revue hal-04326927v1
	Modeling and Characterization of an MBE-Grown Concentrator P-N GaSb Solar Cells Using a Pseudo-3D Model Joanna Kret , Stéphanie Parola , Frédéric Martinez , Alexandre Vauthelin , Julie Tournet IEEE Journal of Photovoltaics, 2021, pp.1-8. ⟨10.1109/JPHOTOV.2021.3075290⟩ Article dans une revue hal-03252488v1
	InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate Z. Loghmari , J.-B. Rodriguez , A. Baranov , M. Rio-Calvo , L. Cerutti APL Photonics, 2020, 5 (4), pp.041302. ⟨10.1063/5.0002376⟩ Article dans une revue hal-02544106v1
	Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template Laura Monge-Bartolomé , Tiphaine Cerba , Daniel A Díaz-Thomas , Michaël Bahriz , Marta Calvo Optics Express, 2020, 28 (14), pp.20785. ⟨10.1364/OE.397164⟩ Article dans une revue hal-02884457v1
	Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon M. Rio Calvo , Laura Monge-Bartolomé , M. Bahriz , Guilhem Boissier , Laurent Cerutti Optica, 2020, 7 (4), pp.263. ⟨10.1364/OPTICA.388383⟩ Article dans une revue hal-02520879v1
	Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy Mohammed Zeghouane , Geoffrey Avit , Yamina Andre , Thierry Taliercio , Pierre Ferret Crystal Growth & Design, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩ Article dans une revue hal-02532717v1
	Zinc-blende group III-V/group IV epitaxy: Importance of the miscut Charles Cornet , Simon Charbonnier , Ida Lucci , Lipin Chen , Antoine Létoublon Physical Review Materials, 2020, 4 (5), pp.053401. ⟨10.1103/PhysRevMaterials.4.053401⟩ Article dans une revue hal-02878985v1
	3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth Daniel Díaz-Thomas , Oleksandr Stepanenko , Michaël Bahriz , Stéphane Calvez , Thomas Batte Semiconductor Science and Technology, 2020, 35 (12), pp.125029. ⟨10.1088/1361-6641/abbebc⟩ Article dans une revue hal-02959663v1
	Massless Dirac fermions in III-V semiconductor quantum wells Sergey S. Krishtopenko , W. Desrat , K. Spirin , C. Consejo , S. Ruffenach Physical Review B, 2019, 99 (12), pp.121405. ⟨10.1103/PhysRevB.99.121405⟩ Article dans une revue hal-02072785v1
	Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer Stéphanie Parola , Alexandre Vauthelin , Julie Tournet , Joanna Kret , Joanna El Husseini Solar Energy Materials and Solar Cells, 2019, 200, pp.110042. ⟨10.1016/j.solmat.2019.110042⟩ Article dans une revue hal-02180291v1
	InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET T. Cerba , P. Hauchecorne , M. Martin , J. Moeyaert , R. Alcotte Journal of Crystal Growth, 2019, 510, pp.18-22. ⟨10.1016/j.jcrysgro.2018.12.014⟩ Article dans une revue hal-02055424v1
	Indium antimonide photovoltaic cells for near-field thermophotovoltaics Dilek Cakiroglu , Jean-Philippe Perez , Axel Evirgen , Christophe Lucchesi , Pierre-Olivier Chapuis Solar Energy Materials and Solar Cells, 2019, 203, pp.110190. ⟨10.1016/j.solmat.2019.110190⟩ Article dans une revue hal-02303848v1
	Type I GaSb 1-x Bi x /GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment R. Kudrawiec , J. Kopaczek , O. Delorme , M. Polak , M. Gladysiewicz Journal of Applied Physics, 2019, 125 (20), pp.205706. ⟨10.1063/1.5094159⟩ Article dans une revue hal-02154946v1
	Molecular-beam epitaxy of GaSb on 6°-offcut (001) Si using a GaAs nucleation layer M. Rio Calvo , J-B Rodriguez , L. Cerutti , M. Ramonda , G. Patriarche Journal of Crystal Growth, 2019, pp.125299. ⟨10.1016/j.jcrysgro.2019.125299⟩ Article dans une revue hal-02326060v1
	Selective growth of ordered hexagonal InN nanorods Mohammed Zeghouane , Geoffrey Avit , Thomas W. Cornelius , Damien Salomon , Yamina Andre CrystEngComm, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩ Article dans une revue hal-02107331v1
	Optical properties and dynamics of excitons in Ga(Sb,Bi)/GaSb quantum wells: evidence for a regular alloy behavior Ernest Rogowicz , Wojciech Linhart , Marcin Grzegorz Syperek , Jan Kopaczek , Olivier Delorme Semiconductor Science and Technology, inPress, ⟨10.1088/1361-6641/ab6017⟩ Article dans une revue hal-02403095v1
	Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics Rodolphe Vaillon , Jean-Philippe Perez , Christophe Lucchesi , Dilek Cakiroglu , Pierre-Olivier Chapuis Optics Express, 2019, 27 (4), pp.A11. ⟨10.1364/OE.27.000A11⟩ Article dans une revue hal-02021345v1
	GaSb-based solar cells for multi-junction integration on Si substrates J. Tournet , S. Parola , A. Vauthelin , D. Montesdeoca Cardenes , S. Soresi Solar Energy Materials and Solar Cells, 2019, 191, pp.444-450. ⟨10.1016/j.solmat.2018.11.035⟩ Article dans une revue hal-02052829v1
	Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µm D. A Díaz-Thomas , Oleksandr Stepanenko , Michaël Bahriz , Stéphane Calvez , E. Tournié Optics Express, 2019, 27 (22), pp.31425. ⟨10.1364/OE.27.031425⟩ Article dans une revue hal-02345145v1
	The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates Michael Niehle , Jean-Baptiste Rodriguez , Laurent Cerutti , Eric Tournié , Achim Trampert physica status solidi (RRL) - Rapid Research Letters, 2019, 13 (10), pp.1900290. ⟨10.1002/pssr.201900290⟩ Article dans une revue hal-02342615v1
	Molecular-beam epitaxy of GaInSbBi alloys O. Delorme , L. Cerutti , E. Luna , A. Trampert , E. Tournié Journal of Applied Physics, 2019, Highly Mismatched Semiconductors Alloys: from Atoms to Devices, 126 (15), pp.155304. ⟨10.1063/1.5096226⟩ Article dans une revue hal-02326087v1
	On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study Michael Niehle , Jean-Baptiste Rodriguez , Laurent Cerutti , Eric Tournié , Achim Trampert Acta Materialia, 2018, 143, pp.121 - 129. ⟨10.1016/j.actamat.2017.09.055⟩ Article dans une revue hal-01754869v1
	A Stress-Free and Textured GaP Template on Silicon for Solar Water Splitting Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban , Yoan Léger Advanced Functional Materials, 2018, 28 (30), pp.1801585. ⟨10.1002/adfm.201801585⟩ Article dans une revue hal-01803990v1
	In situ determination of the growth conditions of GaSbBi alloys O. Delorme , L. Cerutti , E. Tournié , J.-B. Rodriguez Journal of Crystal Growth, 2018, 495, pp.9-13. ⟨10.1016/j.jcrysgro.2018.05.010⟩ Article dans une revue hal-02080206v1
	Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin Franziska B. Barho , Fernando Gonzalez-Posada , Maria-Jose Milla , Mario Bomers , Laurent Cerutti Journal of Nanophotonics, 2018, 7 (2), pp.507-516. ⟨10.1515/nanoph-2017-0052⟩ Article dans une revue hal-01782427v1
	Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well Sergey S. Krishtopenko , Sandra Ruffenach , F. Gonzalez-Posada , G. Boissier , M. Marcinkiewicz Physical Review B, 2018, 97 (24), pp.245419. ⟨10.1103/PhysRevB.97.245419⟩ Article dans une revue hal-01862289v1
	Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics Mario Bomers , Aude Mezy , Laurent Cerutti , Franziska Barho , Fernando Gonzalez-Posada Applied Surface Science, 2018, 451, pp.241-249. ⟨10.1016/j.apsusc.2018.04.208⟩ Article dans une revue hal-02080141v1
	Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition T. Cerba , M. Martin , J. Moeyaert , S. David , J. Rouvière Thin Solid Films, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩ Article dans une revue hal-01954336v1
	Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode Anne Ponchet , G. Patriarche , J. B. Rodriguez , L. Cerutti , E. Tournié Applied Physics Letters, 2018, 113 (19), pp.191601. ⟨10.1063/1.5055056⟩ Article dans une revue hal-01913668v1
	Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics Mario Bomers , Franziska Barho , Maria Jose Milla-Rodrigo , Laurent Cerutti , Richard Arinero Journal of Physics D: Applied Physics, 2018, 51 (1), pp.015104. ⟨10.1088/1361-6463/aa98af⟩ Article dans une revue hal-01754720v1
	Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water Mario Bomers , Davide Maria Di Paola , Laurent Cerutti , Thierry Michel , Richard Arinero Semiconductor Science and Technology, 2018, 33 (9), pp.095009. ⟨10.1088/1361-6641/aad4bf⟩ Article dans une revue hal-02045509v1
	Universal description of III-V/Si epitaxial growth processes Ida Lucci , Simon Charbonnier , L. Pedesseau , Maxime Vallet , Laurent Cerutti Physical Review Materials, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩ Article dans une revue hal-01833206v1
	Quantum cascade lasers grown on silicon Hoang Nguyen-Van , Alexei Baranov , Zeineb Loghmari , Laurent Cerutti , Jean-Baptiste Rodriguez Scientific Reports, 2018, 8 (1), ⟨10.1038/s41598-018-24723-2⟩ Article dans une revue hal-02067224v1
	Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness E. Luna , O. Delorme , L. Cerutti , E. Tournié , J-B Rodriguez Semiconductor Science and Technology, 2018, 33 (9), pp.094006. ⟨10.1088/1361-6641/aad5c4⟩ Article dans une revue hal-02080292v1
	Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications E. Luna , O. Delorme , L. Cerutti , E. Tournié , J.-B. Rodriguez Applied Physics Letters, 2018, 112 (15), ⟨10.1063/1.5024199⟩ Article dans une revue hal-01770179v1
	Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations Michael Niehle , Achim Trampert , Jean-Baptiste Rodriguez , Laurent Cerutti , Eric Tournié Scripta Materialia, 2017, 132, pp.5 - 8. ⟨10.1016/j.scriptamat.2017.01.018⟩ Article dans une revue hal-01626953v1
	Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer Jean-Baptiste Rodriguez , Laurent Cerutti , G. Patriarche , L. Largeau , K. Madiomanana Journal of Crystal Growth, 2017, 477, pp.65-71. ⟨10.1016/j.jcrysgro.2017.04.003⟩ Article dans une revue hal-01755268v1
	Low-loss orientation-patterned GaSb waveguides for mid-infrared parametric conversion S. Roux , L. Cerutti , E. Tournié , B. Gerard , G. Patriarche Optical Materials Express, 2017, 7 (8), ⟨10.1364/OME.7.003011⟩ Article dans une revue hal-01626879v1
	Surface-enhanced infrared absorption with Si-doped InAsSb/GaSb nano-antennas M. Milla , F. Barho , F. Gonzalez-Posada , L. Cerutti , Benoit Charlot Optics Express, 2017, 25 (22), ⟨10.1364/OE.25.026651⟩ Article dans une revue hal-01626940v1
	Growth and characterization of AlInAsSb layers lattice-matched to GaSb J. Tournet , Y. Rouillard , E. Tournié Journal of Crystal Growth, 2017, ⟨10.1016/j.jcrysgro.2017.04.001⟩ Article dans une revue hal-01597528v1
	GaSbBi/GaSb quantum well laser diodes O. Delorme , L. Cerutti , E. Luna , G. Narcy , A. Trampert Applied Physics Letters, 2017, 110 (22), ⟨10.1063/1.4984799⟩ Article dans une revue hal-01626914v1
	Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys Olivier Delorme , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié Journal of Crystal Growth, 2017, 477, pp.144-148. ⟨10.1016/j.jcrysgro.2017.03.048⟩ Article dans une revue hal-01755264v1
	Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si A. Castellano , L. Cerutti , J. B. Rodriguez , G. Narcy , A. Garreau APL Photonics, 2017, 2 (6), ⟨10.1063/1.4983389⟩ Article dans une revue hal-01626979v1
	Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs "Three-Layer" Gapless Quantum Wells Sandra Ruffenach , Sergey S. Krishtopenko , L. S. Bovkun , A. V. Ikonnikov , M. Marcinkiewicz JETP Letters, 2017, 106 (11), pp.727-732. ⟨10.1134/S0021364017230102⟩ Article dans une revue hal-01830516v1
	X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates J.B. Rodriguez , K. Madiomanana , L. Cerutti , A. Castellano , E. Tournié Journal of Crystal Growth, 2016, 439, pp.33 - 39. ⟨10.1016/j.jcrysgro.2016.01.005⟩ Article dans une revue hal-01626675v1
	Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures M. Milla , F Barho , F. Gonzalez-Posada , L. Cerutti , M. Bomers Nanotechnology, 2016, 27 (42), ⟨10.1088/0957-4484/27/42/425201⟩ Article dans une revue hal-01626670v1
	III-V-on-silicon integrated micro - spectrometer for the 3 μm wavelength range M. Muneeb , A. Vasiliev , A. Ruocco , A. Malik , H. Chen Optics Express, 2016, 24 (9), ⟨10.1364/OE.24.009465⟩ Article dans une revue hal-01626678v1
	Metamorphic III–V semiconductor lasers grown on silicon Eric Tournié , Laurent Cerutti , Jean-Baptiste Rodriguez , Huiyun Liu , Jiang Wu MRS Bulletin, 2016, 41 (03), pp.218 - 223. ⟨10.1557/mrs.2016.24⟩ Article dans une revue hal-01626680v1
	Mid-infrared characterization of refractive indices and propagation losses in GaSb/Al X Ga 1−X AsSb waveguides S. Roux , P. Barritault , O. Lartigue , Laurent Cerutti , Eric Tournié Applied Physics Letters, 2015, 107 (17), pp.171901. ⟨10.1063/1.4934702⟩ Article dans une revue hal-01626350v1
	Silicon surface preparation for III-V molecular beam epitaxy K. Madiomanana , M. Bahri , J.B. Rodriguez , L. Largeau , L. Cerutti Journal of Crystal Growth, 2015, 413, pp.17 - 24. ⟨10.1016/j.jcrysgro.2014.12.004⟩ Article dans une revue hal-01626282v1
	Fano-like resonances sustained by Si doped InAsSb plasmonic resonators integrated in GaSb matrix Thierry Taliercio , Vilianne Ntsame Guilengui , Laurent Cerutti , Jean-Baptiste Rodriguez , Franziska Barho Optics Express, 2015, 23 (23), ⟨10.1364/OE.23.029423⟩ Article dans une revue hal-01626280v1
	GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55- μ m Laurent Cerutti , A. Castellano , J.-B. Rodriguez , M. Bahri , L. Largeau Applied Physics Letters, 2015, 106 (10), pp.101102. ⟨10.1063/1.4914884⟩ Article dans une revue hal-01626349v1
	Brewster "mode" in highly doped semiconductor layers: an all-optical technique to monitor doping concentration Thierry Taliercio , Vilianne Ntsame Guilengui , Laurent Cerutti , Eric Tournié , Jean-Jacques Greffet Optics Express, 2014, 22 (20), pp.24294-24303. ⟨10.1364/OE.22.024294⟩ Article dans une revue hal-01349754v1
	Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range Roel Roelkens , Utsav Dave , Alban Gassenq , Nannicha Hattasan , Chen Hu IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20 (4), pp.394 - 404. ⟨10.1109/JSTQE.2013.2294460⟩ Article dans une revue hal-01623780v1
	Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm E. Ryckeboer , A. Gassenq , M. Muneeb , N. Hattasan , S. Pathak Optics Express, 2013, 21 (5), ⟨10.1364/OE.21.006101⟩ Article dans une revue hal-01620504v1
	Mid-IR GaSb-Based Bipolar Cascade VCSELs Dorian Sanchez , Laurent Cerutti , Eric Tournié IEEE Photonics Technology Letters, 2013, 25 (9), pp.882 - 884. ⟨10.1109/LPT.2013.2254707⟩ Article dans une revue hal-01620511v1
	Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures A. Lenz , E. Tournié , J. Schuppang , M. Dähne , H. Eisele Applied Physics Letters, 2013, 102 (10), ⟨10.1063/1.4795020⟩ Article dans une revue hal-01621245v1
	Effects of low temperature on the cold start gaseous emissions from light duty vehicles fuelled by ethanol-blended gasoline M. Clairotte , T.W. Adam , A. Zardini , U. Manfredi , G. Martini Applied Energy, 2013, 102, pp.44 - 54. ⟨10.1016/j.apenergy.2012.08.010⟩ Article dans une revue hal-01621248v1
	Recombination channels in 2.4–3.2 µm GaInAsSb quantum-well lasers S. Gadedjisso-Tossou , S. Belahsene , M. A. Mohou , E. Tournié , Y. Rouillard Semiconductor Science and Technology, 2013, 28 (1), ⟨10.1088/0268-1242/28/1/015015⟩ Article dans une revue hal-01620500v1
	Silicon-based heterogeneous photonic integrated circuits for the mid-infrared Roel Roelkens , Utsav Dave , Alban Gassenq , Nannicha Hattasan , Chen Chen Optical Materials Express, 2013, 3 (9), ⟨10.1364/OME.3.001523⟩ Article dans une revue hal-01621428v1
	Mid-IR GaSb-based monolithic vertical-cavity surface-emitting lasers Dorian Sanchez , Laurent Cerutti , Eric Tournié Journal of Physics D: Applied Physics, 2013, 46 (49), ⟨10.1088/0022-3727/46/49/495101⟩ Article dans une revue hal-01621431v1
	Online characterization of regulated and unregulated gaseous and particulate exhaust emissions from two-stroke mopeds: A chemometric approach Michael Clairotte , T.W. Adam , R. Chirico , B. Giechaskiel , U. Manfredi Analytica Chimica Acta, 2012, 717, pp.28-38. ⟨10.1016/j.aca.2011.12.029⟩ Article dans une revue hal-01269505v1
	Localized surface plasmon resonances in highly doped semiconductors nanostructures V. N'Tsame Guilengui , L. Cerutti , Jean-Baptiste Rodriguez , E. Tournié , T. Taliercio Applied Physics Letters, 2012, 101 (16), ⟨10.1063/1.4760281⟩ Article dans une revue hal-01619628v1
	Single-Mode Monolithic GaSb Vertical-Cavity Surface-Emitting Laser Dorian Sanchez , Laurent Cerutti , Eric Tournié Optics Express, 2012, 20 (14), ⟨10.1364/OE.20.015540⟩ Article dans une revue hal-01619625v1
	Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip Alban Gassenq , Nannicha Hattasan , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié Optics Express, 2012, 20 (11), ⟨10.1364/OE.20.011665⟩ Article dans une revue hal-01619611v1
	Selective lateral etching of InAs/GaSb tunnel junctions for mid-infrared photonics D. Sanchez , L. Cerutti , E. Tournié Semiconductor Science and Technology, 2012, 27 (8), ⟨10.1088/0268-1242/27/8/085011⟩ Article dans une revue hal-01619620v1
	III–V/Silicon Photonics for Short-Wave Infrared Spectroscopy Günther Roelkens , William M. J. Green , Bart Kuyken , Xiaoping Liu , Nannicha Hattasan IEEE Journal of Quantum Electronics, 2012, 48 (2), pp.292 - 298. ⟨10.1109/JQE.2011.2178090⟩ Article dans une revue hal-01619607v1
	Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si Jean-Rémy Reboul , Laurent Cerutti , Jean-Baptiste Rodriguez , Pierre Grech , Eric Tournié Applied Physics Letters, 2011, 99 (12), pp.121113. ⟨10.1063/1.3644983⟩ Article dans une revue hal-00641322v1
	Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit Nannicha Hattasan , Alban Gassenq , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié IEEE Photonics Technology Letters, 2011, 23 (23), pp.1760 - 1762. ⟨10.1109/LPT.2011.2169244⟩ Article dans une revue hal-01618842v1
	Note: A high transmission Faraday optical isolator in the 9.2 μm range Laurent Hilico , Albane Douillet , Jean-Philippe Karr , Eric Tournié Review of Scientific Instruments, 2011, pp.1. ⟨10.1063/1.3640004⟩ Article dans une revue hal-00574660v1
	GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 mu m at Room Temperature Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié IEEE Photonics Technology Letters, 2010, 22 (8), pp.553-555. ⟨10.1109/LPT.2010.2042591⟩ Article dans une revue hal-00539210v1
	Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy E. Luna , B. Satpati , J. B. Rodriguez , A. N. Baranov , E. Tournié Applied Physics Letters, 2010, 96 (2), ⟨10.1063/1.3291666⟩ Article dans une revue hal-01618582v1
	Highly tensile-strained, type-II, Ga1−xInxAs/GaSb quantum wells T. Taliercio , A. Gassenq , E. Luna , A. Trampert , E. Tournié Applied Physics Letters, 2010, 96 (6), ⟨10.1063/1.3303821⟩ Article dans une revue hal-01618751v1
	Optical performances of InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission S. Ben Rejeb , M. Debbichi , M. Saïd , A. Gassenq , E. Tournié Journal of Applied Physics, 2010, 108 (9), ⟨10.1063/1.3503513⟩ Article dans une revue hal-01618571v1
	Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method S. Ben Rejeb , M. Debbichi , M. Saïd , A. Gassenq , E. Tournié Journal of Physics D: Applied Physics, 2010, 43 (32), ⟨10.1088/0022-3727/43/32/325102⟩ Article dans une revue hal-01618573v1
	Non-random Be-to-Zn substitution in ZnBeSe alloys : Raman scattering and ab initio calculations O. Pagès , A.V. Postnikov , A. Chafi , D. Bormann , P. Simon The European Physical Journal B: Condensed Matter and Complex Systems, 2010, 73, pp.461-469. ⟨10.1140/epjb/e2010-00047-0⟩ Article dans une revue hal-00534722v1
	Mid-Infrared GaSb-based EP-VCSEL emitting at 2.63 µm Arnaud Ducanchez , Laurent Cerutti , Pierre Grech , Frédéric Genty , Eric Tournié Electronics Letters, 2009, 45 (5), pp.265-266. ⟨10.1049/el:20090134⟩ Article dans une revue hal-00380609v1
	Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells A. Gassenq , T. Taliercio , L. Cerutti , A. N. Baranov , E. Tournié Electronics Letters, 2009, 45 (25), ⟨10.1049/el.2009.2207⟩ Article dans une revue hal-01617854v1
	GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by MBE Laurent Cerutti , Arnaud Ducanchez , Grégoire Narcy , Pierre Grech , G. Boissier Journal of Crystal Growth, 2009, 311 (7), pp.1912-1916. ⟨10.1016/j.jcrysgro.2008.11.026⟩ Article dans une revue hal-00380447v1
	Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy E. Luna , F. Ishikawa , B. Satpati , Jean-Baptiste Rodriguez , Eric Tournié Journal of Crystal Growth, 2009, 311, pp.1739-1744. ⟨10.1016/j.jcrysgro.2008.10.039⟩ Article dans une revue hal-00462048v1
	Cycle de conception d’un laser à semi-conducteur pour la détection de gaz A. Gassenq , L. Cerutti , A. N. Baranov , E. Tournié La Revue de l'électricité et de l'électronique, 2009, n° 6/7, pp. 23 - 26 Article dans une revue hal-01828893v1
	Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate J. B. Rodriguez , L. Cerutti , P. Grech , E. Tournié Applied Physics Letters, 2009, 94 (6), ⟨10.1063/1.3082098⟩ Article dans une revue hal-01617839v1
	InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3 [micro sign]m at room-temperature A. Gassenq , G. Boissier , P. Grech , G. Narcy , A. N. Baranov Electronics Letters, 2009, 45 (3), ⟨10.1049/el:20092882⟩ Article dans une revue hal-01617838v1
	S20 photocathodes grown by molecular-beam deposition N. Massegu , A. Konrath , J.M. Barois , Philippe Christol , E. Tournié Electronics Letters, 2008, 44 (4), ⟨10.1049/el:20082829⟩ Article dans une revue hal-01617347v1
	Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm G. Rainò , A. Salhi , V. Tasco , R. Intartaglia , R. Cingolani Applied Physics Letters, 2008, 92 (10), ⟨10.1063/1.2894586⟩ Article dans une revue hal-01617290v1
	Type II transition in InSb-based nanostructures for midinfrared applications R. Intartaglia , G. Rainó , V. Tasco , F. Della Sala , R. Cingolani Journal of Applied Physics, 2008, 103 (11), ⟨10.1063/1.2938063⟩ Article dans une revue hal-01617298v1
	Molecular beam epitaxy of InSb/GaSb quantum dots N. Deguffroy , V. Tasco , A. N. Baranov , E. Tournié , B. Satpati Journal of Applied Physics, 2007, 101 (12), pp.124309-124309-7. ⟨10.1063/1.2748872⟩ Article dans une revue hal-00327178v1
	Investigations on InSb-based quantum dots grown by molecular beam epitaxy N. Deguffroy , V. Tasco , A. N. Baranov , B. Satpati , A. Trampert physica status solidi (c), 2007, 4 (5), pp.1743-1746. ⟨10.1002/pssc.200674268⟩ Article dans une revue hal-00327182v1
	Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93 μm L. Cerutti , G. Boissier , P. Grech , A. Pérona , J. Angellier Journal of Crystal Growth, 2007, 301-302, pp.967-970. ⟨10.1016/j.jcrysgro.2006.11.057⟩ Article dans une revue hal-00327288v1
	MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics E. Tournié , A. Trampert physica status solidi (b), 2007, 244 (8), pp.2683-2696. ⟨10.1002/pssb.200675623⟩ Article dans une revue hal-00327621v1
	Interface analysis of InAs/GaSb superlattice grown by MBE Philippe Christol , B. Satpati , Jean-Baptiste Rodriguez , A. Trampert , Eric Tournié Journal of Crystal Growth, 2007, 301-302, pp.889 - 892. ⟨10.1016/j.jcrysgro.2006.11.284⟩ Article dans une revue hal-01756643v1
	High-density InSb-based quantum dots emitting in the mid-infrared V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati Journal of Crystal Growth, 2007, 301-302, pp.713-717. ⟨10.1016/j.jcrysgro.2006.09.016⟩ Article dans une revue hal-00325049v1
	Correlation between quantum well morphology, carrier localization and electronic properties of GaInNAs/GaAs light emitting diodes J.-M. Ulloa , A. Hierro , J. Miguel-Sanchez , A. Guzman , J.-M. Chauveau Semiconductor Science and Technology, 2006, 21 (8), pp.1047-1052. ⟨10.1088/0268-1242/21/8/011⟩ Article dans une revue hal-00329113v1
	Structural and optical properties of InSb quantum dots for mid-IR applications V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati physica status solidi (b), 2006, 243 (15), pp.3959-3962. ⟨10.1002/pssb.200671512⟩ Article dans une revue hal-00328071v1
	High-density, uniform InSb/GaSb quantum dots emitting in the midinfrared region V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati Applied Physics Letters, 2006, 89 (26), pp.263118.1-263118.3. ⟨10.1063/1.2425041⟩ Article dans une revue hal-00328003v1
	Decomposition in as-grown (Ga,In)(N,As) quantum wells. X. Kong , A. Trampert , E. Tournié , K.H. Ploog Applied Physics Letters, 2005, 87 (17), pp.171901. ⟨10.1063/1.2108108⟩ Article dans une revue hal-00330374v1
	Long-wave phonons in ZnSe-BeSe mixed crystals: Raman scattering and percolation model O. Pagès , M. Ajjoun , T. Tite , D. Bormann , E. Tournié Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70 (15), pp.155319.1-155319.10. ⟨10.1103/PhysRevB.70.155319⟩ Article dans une revue hal-00330216v1
	Does In-bonding delay GaN-segregation in GaInAsN? A Raman study T. Tite , O. Pagès , E. Tournié Applied Physics Letters, 2004, 85 (24), pp.5872. ⟨10.1063/1.1829387⟩ Article dans une revue hal-00330630v1
	Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes J.-M. Ulloa , A. Hierro , J. Miguel-Sanchez , A. Guzman , E. Tournié Applied Physics Letters, 2004, 85 (1), pp.40 - 42. ⟨10.1063/1.1769078⟩ Article dans une revue hal-00327653v1
	From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction T. Taliercio , R. Intartaglia , B. Gil , P. Lefèbvre , T. Bretagnon Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (7), pp.073303.1-073303.4. ⟨10.1103/PhysRevB.69.073303⟩ Article dans une revue hal-00330627v1
	Be–Se double-phonon behavior in Zn1–x–yMgyBexSe alloy O. Pagès , M. Ajjoun , D. Bormann , E. Tournié European Physical Journal: Applied Physics, 2004, 95 (12), pp.7690 - 7693. ⟨10.1063/1.1738522⟩ Article dans une revue hal-00330140v1
	Nanoscale analysis of the In and N spatial redistribution upon annealing of GaInNAs quantum wells J.-M. Chauveau , A. Trampert , K.H. Ploog , E. Tournié Applied Physics Letters, 2004, 84 (14), pp.2503 - 2505. ⟨10.1063/1.1690108⟩ Article dans une revue hal-00327645v1
	Isoelectronic traps in heavily doped GaAs:(In,N) R. Intartaglia , T. Taliercio , P. Valvin , B. Gil , P. Lefèbvre Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (23), pp.235202.1-235202.5. ⟨10.1103/PhysRevB.68.235202⟩ Article dans une revue hal-00327975v1
	Effect of nitrogen on the band structure and material gain of InyGa1-yAs1-xNx-GaAs quantum wells J.-M. Ulloa , J.L. Sanchez-Rojas , A. Hierro , J.M.G. Tijero , E. Tournié IEEE Journal of Selected Topics in Quantum Electronics, 2003, 9 (3), pp.716-722. ⟨10.1109/JSTQE.2003.818860⟩ Article dans une revue hal-00327321v1
	Crystal reorganization upon annealing of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy. A. Hierro , J.-M. Ulloa , A. Trampert , J.-M. Chauveau , M.-A. Pinault Journal of Applied Physics, 2003, 94 (4), pp.2319 - 2324. ⟨10.1063/1.1591416⟩ Article dans une revue hal-00327145v1
	GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm E. Tournié , M.-A. Pinault , J.-M. Chauveau , A. Trampert , K.H. Ploog Applied Physics Letters, 2003, 82 (12), pp.1845-1847. ⟨10.1063/1.1563062⟩ Article dans une revue hal-00327186v1
	Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys O. Pagès , T. Tite , D. Bormann , E. Tournié , O. Maksimov Applied Physics Letters, 2003, 82 (17), pp.2808-2810. ⟨10.1063/1.1566801⟩ Article dans une revue hal-00327726v1
	Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells J.-M. Chauveau , A. Trampert , K.H. Ploog , M.-A. Pinault , E. Tournié Applied Physics Letters, 2003, 82 (20), pp.3451-3453. ⟨10.1063/1.1577393⟩ Article dans une revue hal-00327216v1
	Nanoindentation of Si, GaP, GaAs and ZnSe single crystals S.E. Grillo , M. Ducarroir , M. Nadal , E. Tournié , J.-P. Faurie. Journal of Physics D: Applied Physics, 2003, 36 (1), pp.5-9. ⟨10.1088/0022-3727/36/1/102⟩ Article dans une revue hal-00329901v1
	Scattered light noise in gravitational wave interferometric detectors: a statistical approach J.Y. Vinet , V. Brisson , S. Braccini , I. Ferrante , L. Pinard Physical Review D, 1997, 56, pp.6085-6095 Article dans une revue in2p3-00000213v1
	Liquid phase epitaxy and characterization of InAs1- x - ySb x P y on (100) InAs H. Mani , E. Tournié , J.-L. Lazzari , C. Alibert , A. Joullié Journal of Crystal Growth, 1992, 121 (3), pp.463-472. ⟨10.1016/0022-0248(92)90158-F⟩ Article dans une revue hal-03156839v1
	Preparation et étude de diodes laser a GaInAsSb-GaAlAsSb fonctionnant en continu à 80K F. Pitard , E. Tournié , M. Mohou , G. Boissier , J.-L. Lazzari Journal de Physique III, 1991, 1 (4), pp.605-622. ⟨10.1051/jp3:1991143⟩ Article dans une revue jpa-00248604v1
	GaInAsSb/GaSb pn photodiodes for detection to 2.4 μm E. Tournié , J.-L. Lazzari , E. Villemain , A. Joullié , L. Gouskov Electronics Letters, 1991, 27 (14), pp.1237. ⟨10.1049/el:19910776⟩ Article dans une revue hal-03156834v1
	2.5 μm GaInAsSb lattice‐matched to GaSb by liquid phase epitaxy E. Tournié , J.-L. Lazzari , F. Pitard , C. Alibert , A. Joullié Journal of Applied Physics, 1990, 68 (11), pp.5936-5938. ⟨10.1063/1.346925⟩ Article dans une revue hal-03156369v1

	Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations Sreejith Pallikkara Chandrasekharan , D Gupta , Anne Ponchet , Gilles Patriarche , Jean-Baptiste Rodriguez “Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, France Communication dans un congrès hal-04224975v1
	Epitaxial integration of mid-infrared III-V devices on group-IV substrates Eric Tournié , J.-B. Rodriguez , L. Cerutti , A. Gilbert , M. Silvestre E-MRS ( European Materials Research Society ) Fall Meeting 2023, Symposium A, E-MRS, Sep 2023, Warsaw, Poland Communication dans un congrès hal-04245650v1
	Near-field thermal radiation, thermophotovoltaics and polaritons Christophe Lucchesi , Julien Legendre , Thomas Châtelet , Dilek Cakiroglu , Jean-Philippe Perez Thermal Polaritonics Workshop, Apr 2023, Tokyo, France Communication dans un congrès hal-04310983v1
	The direct epitaxy of III-V lasers on Silicon (Si) substrates has been considered for decades as an important objective for the realization of integrated photonics chips. Major progress has been achieved recently thanks to the understanding of the defect generation mechanisms, and systematic studies of their suppression [1, 2], or at least the drastic reduction of their density into the active region of the device. In this presentation, we will discuss the challenges related to the growth of III-Vs on Si and present the current state-of-the-art of mid-IR lasers grown on Si . In addition, we will present recent advances in the epitaxial integration of DLs on patterned Si photonics wafer equipped with SiN waveguides. Growth and device fabrication challenges arising from the template architecture were overcome to obtain DLs butt-coupled to the passive waveguides. We demonstrate several mW outpower of emitted light in continuous wave operation at room temperature from the DL grown on the patterned Si photonic wafer . In addition, we will show that, in our configuration, around 10% of the laser light is coupled into the passive SiN waveguides, in good agreement with theoretical calculations . These results open the route to active photonic integrated circuits perating in the mid-infrared for sensing applications. Tournié Eric , M. Paparella , A. Remis , A. Gilbert , M. Rio-Calvo European Semiconductor Laser Workshop, University of Glasgow, Sep 2023, Glasgow, United Kingdom Communication dans un congrès hal-04245702v1
	Low bandgap (near-field) TPV: materials and structures Rodolphe Vaillon , Basile Roux , Christophe Lucchesi , Nacira Hanouf , Dilek Cakiroglu The 14th World Conference on Thermophotovoltaic Generation of Electricity (TPV-14), Andrej Lenert, May 2023, Online, United States Communication dans un congrès hal-04156802v1
	Butt-coupling of semiconductor lasers and passive waveguides by direct epitaxy on patterned Si photonic wafers A Remis , M Paparella , A Gilbert , L Monge-Bartolome , G Boissier Compound Semiconductor Week 2023, May 2023, Jeju City, Jeju Island, South Korea Communication dans un congrès hal-04121366v1
	Mid-IR lasers epitaxially integrated onto Si E Tournié , A Remis , M Paparella , A Gilbert , L Monge-Bartolomé 45th Freiburg Infrared Colloquium, May 2023, Freiburg (Allemagne), Germany Communication dans un congrès hal-04121335v1
	Solid-state/optical alternatives to thermoelectricity for thermal-to-electrical energy conversion Christophe Lucchesi , Julien Legendre , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio 18th European Conference on Thermoelectrics (ECT), Oct 2022, Barcelona, Spain Communication dans un congrès hal-03813779v1
	Analysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platforms Michele Paparella , Laura Monge-Bartolomé , Jean-Baptiste Rodriguez , Laurent Cerutti , Marco Grande 2022 IEEE International Photonics Conference, Nov 2022, Vancouver, Canada. ⟨10.1109/IPC53466.2022.9975716⟩ Communication dans un congrès hal-03906450v1
	Molecular beam epitaxy of III-V semiconductors on group-IV (001) substrates: Formation and burying of antiphase domains. Audrey Gilbert , Jean-Baptiste Rodriguez , Marta Rio Calvo , Michel Ramonda , Laurent Cerutti 22nd International Conference on Molecular-Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom Communication dans un congrès hal-03806222v1
	Cascade lasers epitaxially grown on Silicon substrates Jean-Baptiste Rodriguez , Laurent Cerutti , A.N. Baranov , Audrey Gilbert , M Rio-Calvo International Quantum Cascade Lasers School and Workshop, Aug 2022, Zurich - Ascona, Switzerland Communication dans un congrès hal-03771073v1
	Controlling near-field thermal energy for conversion devices and sensing Christophe Lucchesi , Julien Legendre , Khac-Long Nguyen , Ahmed Alwakil , Dilek Cakiroglu Program on Emerging Regimes and Implications of Quantum and Thermal Fluctuational Electrodynamics (Flectro2022), Kavli Institute of Theoretical Physics (KITP), Jul 2022, UC Santa Barbara, United States. ⟨10.26081/K6R93X⟩ Communication dans un congrès hal-03813941v1
	Analysis of the coupling efficiency between monolithically integrated GaSb laser diodes and SiNx waveguides Michele Paparella , Laura Monge-Bartolome , Jean-Baptiste Rodriguez , Laurent Cerutti , Marco Grande 15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guildford (on line), United Kingdom Communication dans un congrès hal-03336700v1
	Toward mid-infrared laser diodes on Silicon photonic integrated circuits Laura Monge-Bartolome , Marta Rio Calvo , Michaël Bahriz , Jean-Baptiste Rodriguez , Laurent Cerutti CLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany Communication dans un congrès hal-03336233v1
	Hybrid ambipolar 2D semimetal/semiconductor III-V/Si heterostructures: Promises for photonics, energy harvesting and electronics Charles Cornet , Lipin Chen , Mekan Piriyev , Jean-Baptiste Rodriguez , Gabriel Loget Webinar on Materials science, engineering and technology - VEBLEO, VEBLEO international organization, Dec 2021, virtual, India Communication dans un congrès hal-03588366v1
	Sb-based Mid-IR lasers grown by MBE on Silicon(001) Marta Rio Calvo , Jean-Baptiste Rodriguez , Laura Monge Bartolome , Laurent Cerutti , Zeineb Loghmari 21st International Conference on Molecular Beam Epitaxy, Sep 2021, Online, Mexico Communication dans un congrès hal-03377236v1
	Etched-facets Mid-IR laser on on-axis Silicon substrate for photonic integrated circuits Laura Monge-Bartolomé , Marta Rio Calvo , M. Bahriz , Jean-Baptiste Rodriguez , Laurent Cerutti Semiconductor and Integrated Optoelectronics Conference, Mar 2021, on line, United Kingdom Communication dans un congrès hal-03187613v1
	Carrier recombination and temperature-dependence of GaInSb quantum well lasers for silicon photonics applications C. R. Fitch , G. W. Read , I. P. Marko , D. A. Duffy , Laurent Cerutti CLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany Communication dans un congrès hal-03336249v1
	Efficient near-field thermophotovoltaic conversion with InSb cells Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié 2021 Spring Meeting of the European Materials Research Society (E-MRS), May 2021, En ligne, France Communication dans un congrès hal-03438226v1
	Mid-infrared laser diodes grown on various on-axis III-V-on-Si templates Laura Monge-Bartolome , Tiphaine Cerba , Mickaël Martin , Marta Rio Calvo , Jean-Baptiste Rodriguez Compound Semiconductor Week (CSW2021), May 2021, Stockholm (on line), Sweden Communication dans un congrès hal-03336846v1
	Anti-phase boundaries annihilation in the growth of GaSb on Silicon(001) Jean-Baptiste Rodriguez , M Rio Calvo , Charles Cornet , Laurent Cerutti , M Ramonda 21st International Conference on Molecular-Beam Epitaxy (IC-MBE 2021), Sep 2021, online, Mexico Communication dans un congrès hal-03336876v1
	Is a substrate miscut really required for high quality III-V/Si monolithic integration? Charles Cornet , Simon Charbonnier , Ida Lucci , Lipin Chen , Antoine Létoublon 21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico Communication dans un congrès hal-03402689v1
	Mid-IR lasers monolithically integrated on on-axis Silicon Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Daniel Andres Diaz Thomas CLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany Communication dans un congrès hal-03336448v1
	Mid-IR lasers epitaxially grown on on-axis (001) Silicon Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Daniel A Diaz-Thomas Novel In-Plane Semiconductor Lasers XX, Mar 2021, Online Only, United States. pp.35, ⟨10.1117/12.2576790⟩ Communication dans un congrès hal-03184742v1
	Mid-infrared III-V semiconductor lasers grown on (001)Silicon substrates Eric Tournié , Laura Monge-Bartolome , Marta Rio Calvo , Daniel Andres Diaz Thomas , Zeineb Loghmari 2021 IEEE Summer Topicals Meeting Series, Jul 2021, On line, United States Communication dans un congrès hal-03336669v1
	Near-field thermophotovoltaic conversion with high electrical power density and efficiency above 14% Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié MRS Spring meeting, Symposium "Nanoscale heat transport", Apr 2021, Seattle (remote), United States Communication dans un congrès hal-03649749v1
	MONOLITHIC INTEGRATION OF MID-IR LASERS ON SILICON Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Roland Teissier 8th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano), Aug 2021, Milano (on line), Italy Communication dans un congrès hal-03336686v1
	Low-energy bandgap thermophotovoltaic cells for harnessing near-field thermal photons Dilek Cakiroglu , Christophe Lucchesi , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié C’Nano 2020, The Nanoscience meeting, Nov 2021, Toulouse, France Communication dans un congrès hal-03457483v1
	Low-energy bandgap thermophotovoltaic cells for medium-grade heat sources Dilek Cakiroglu , Jean-Philippe Perez , Axel Evirgen , Christophe Lucchesi , Pierre-Olivier Chapuis 2021 Spring Meeting of the European Materials Research Society (E-MRS), May 2021, En ligne, France Communication dans un congrès hal-03437899v1
	Temperature and High Hydrostatic Pressure Investigations of Epitaxially Grown 2.3-µm GaSb lasers on Si A. R. Ellis , I. P. Marko , T. D. Eales , Laurent Cerutti , Marta Rio Calvo 15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guildford (on line), United Kingdom Communication dans un congrès hal-03336838v1
	Sb-based interband cascade Mid-IR devices with top GaAs metamorphic layers Daniel Andres Díaz Thomas , Oleksandr Stepanenko , Michaël Bahriz , Stéphane Calvez , Thomas Batte Compound Semiconductor Week 2021 (CSW 2021), May 2021, Stockholm (online), Sweden Communication dans un congrès hal-03358749v1
	Efficient near-field thermophotovoltaic conversion with InSb cells Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié SFT "Nanoscale Heat Transport Days", Jan 2020, Paris, France Communication dans un congrès hal-02459116v1
	Progress in Interband Cascade Lasers: from edge emitting lasers to VCSELs Stéphane Calvez , Oleksandr Stepanenko , Daniel A Díaz-Thomas , Thomas Batte , M. Bahriz 2020 22nd International Conference on Transparent Optical Networks (ICTON), Jul 2020, Bari, Italy. pp.1-4, ⟨10.1109/ICTON51198.2020.9203274⟩ Communication dans un congrès hal-02996714v1
	Recent advances in near-field thermophotovoltaics Rodolphe Vaillon , Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio sTE2C virtual colloquium, Daniele M. Trucchi, Gaspare Varvaro (CNR-ISM, Roma, Italy), Nov 2020, Online, Italy Communication dans un congrès hal-03018774v1
	Mid-IR lasers sources monolithically integrated on Si substrates Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Daniel Andres Diaz Thomas SPIE Photonex & Vacuum Expo Digital Forum, Emerging Applications in Silicon Photonics, SPIE, Oct 2020, on line, United Kingdom Communication dans un congrès hal-03184754v1
	Characterization and numerical analysis of III-Sb tandem solar cells Joanna Kret , S. Parola , J. Tournet , Yves Rouillard , Eric Tournié Journées Nationales du Photovoltaïque, Dec 2019, Dourdan, France Communication dans un congrès hal-02382568v1
	Near-field radiative heat transfer measurements between a sphere and a substrate: large temperature differences, geometrical effects and materials Christophe Lucchesi , Rodolphe Vaillon , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio MRS Spring Meeting Symposium "Nanoscale Heat Transport: Fundamentals", Apr 2019, Phoenix, United States Communication dans un congrès hal-02043071v1
	Near- to mid- IR antimonide optoelectronic devices epitaxially integrated on on-axis (001) Si substrates Jean-Baptiste Rodriguez , M. Rio Calvo , Laurent Cerutti , Laura Monge-Bartolomé , M. Bahriz The 9th International Symposium on Photonics and Electronics Convergence, Nov 2019, Tokyo, Japan Communication dans un congrès hal-02383950v1
	InAs/AlSb quantum cascade lasers grown on silicon substrates (Conference Presentation) Eric Tournié , Hoang Nguyen Van , Zeineb Loghmari , Laurent Cerutti , Jean-Baptiste Rodriguez Quantum Sensing and Nano Electronics and Photonics XVI, Feb 2019, San Francisco, United States. pp.10926-41 Communication dans un congrès hal-02342613v1
	Transmission Electron Microscopy of (In,Ga)(Sb,Bi) epilayers and quantum wells Esperanza Luna , Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez 10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France Communication dans un congrès hal-02327205v1
	GaSb materials and devices: the IR optoelectronics toolbox E. Tournié International Nano-Optoelectronics Workshop (iNOW 2019), Jul 2019, Guangzhou - Shenzhen, China Communication dans un congrès hal-02342610v1
	Antimonide-based optoelectronic devices grown on Si substrates (Conference Presentation) Eric Tournié , Laurent Cerutti , Jean-Baptiste Rodriguez , Jean-Philippe Perez , Philippe Christol Silicon Photonics XIV, Feb 2019, San Francisco, United States. pp.10923-11 Communication dans un congrès hal-02342612v1
	A universal mechanism to describe III-V epitaxy on Si Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti 20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany Communication dans un congrès hal-02048639v1
	Characterization and pseudo-3D modeling of GaSb solar cells for high-concentration photovoltaics Joanna Kret , S. Parola , Alexandre Vauthelin , Frédéric Martinez , Julie Tournet 36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Sep 2019, Marseille, France Communication dans un congrès hal-02382578v1
	Mesures expérimentales du transfert radiatif en champ proche et de la conversion thermophotovoltaïque Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France Communication dans un congrès hal-02043083v1
	Near-field thermophotovoltaic conversion with InSb cells C. Lucchesi , D. Cakiroglu , J.-P. Perez , T. Taliercio , E. Tournié E-MRS Fall Meeting Symposium "Nanomaterials thermal transport properties and nanothermodynamics, Sep 2019, Varsovie, Poland Communication dans un congrès hal-02379726v1
	Epitaxial Integration of GaSb-based mid-IR devices on Silicon E. Tournié , Jean-Baptiste Rodriguez , L Cerutti , Roland Teissier , Alexei Baranov Light Conference 2019, Jul 2019, Changchun, China Communication dans un congrès hal-02342611v1
	Potential of AlGaAsSb alloys for GaSb-based multi-junction solar cells S. Parola , Joanna Kret , A. Vauthelin , Julie Tournet , Frédéric Martinez Forum of Revolutions in Renewable Energy in 21th Century (FOREN-2019), Oct 2019, Rome, Italy Communication dans un congrès hal-02382507v1
	Near-field radiative heat transfer experiments and thermophotovoltaic conversion Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié Focus Session on « Fluctuational Electrodynamics and Heat Transfer », Progress In Electromagnetism Research (PIERS) 2019 conference, Jun 2019, Rome, Italy Communication dans un congrès hal-02043078v1
	Mid-IR lasers epitaxially grown on silicon E. Tournié , J.B. Rodriguez , Laurent Cerutti , M. Rio Calvo , Laura Monge-Bartolomé GDR nanoTERAMIR, Jun 2019, Agay, France Communication dans un congrès hal-02342614v1
	Molecular-beam epitaxy of GaInSbBi alloys and QWs Olivier Delorme , Laurent Cerutti , Esperanza Luna , Achim Trampert , Eric Tournié 10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France Communication dans un congrès hal-02327216v1
	Study of In incorporation into GaSbBi alloys Olivier Delorme , Laurent Cerutti , Esperanza Luna , Achim Trampert , Eric Tournié 20th European Workshop on Molecular Beam Epitaxy, 2019, Lenggries, Germany Communication dans un congrès hal-02327229v1
	Towards MIR VCSELs operating in CW at RT Daniel Andres Diaz Thomas , Oleksandr Stepanenko , Michaël Bahriz , Stéphane Calvez , Thomas Batte Compound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, Japan. ⟨10.1109/iciprm.2019.8819164⟩ Communication dans un congrès hal-03012184v1
	Near-field radiative heat transfer experiments for thermophotovoltaic conversion Christophe Lucchesi , Rodolphe Vaillon , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio 5th International Conference on Near-Field Optics, Nanophotonics and Related Techniques (NFO), Aug 2018, Troyes, France Communication dans un congrès hal-02025479v1
	GaSb materials and devices: the IR toolbox E. Tournié UK Semiconductors, 2018, Sheffield, United Kingdom Communication dans un congrès hal-02078273v1
	Antimonide-based optoelectronic devices epitaxially grown on Silicon E. Tournié , L. Cerutti , J.-B. Rodriguez , J.-P. Perez , A. N. Baranov International nano-optoelectronics workshop (iNOW 2018), 2018, Berkeley, United States Communication dans un congrès hal-02078268v1
	(114) GaP surface texturation on Si for water splitting Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban , Yoan Léger EMRS Spring meeting 2018, Jun 2018, Strasbourg, France Communication dans un congrès hal-01708047v1
	InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Reynald Alcotte , Bassem Salem 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan Communication dans un congrès hal-01954906v1
	Surface enhanced infrared absorption with highly doped InAsSb plasmonic nanostructures F. Barho , M. Bomers , F. Gonzalez-Posada , L. Cerutti , E. Tournié GDR NanoTeraMIR, 2018, Montpellier, France Communication dans un congrès hal-02084508v1
	GaSb-based lasers in the telecom wavelength range monolithically integrated on Si E. Tournié , L. Cerutti , J.-B. Rodriguez , A. Castellano , A. Garreau ECOC 2018, Workshop on Integrated Photonics, 2018, Rome, Italy Communication dans un congrès hal-02078228v1
	Mid-Infrared 2.7 µm GaSbBi/GaSb quantum well lasers studied under high hydrostatic pressure Igor Marko , Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez 14th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), 2018, Flagstaff, United States Communication dans un congrès hal-02327248v1
	Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate Q. Durlin , J.P. Perez , L. Cerutti , J.B. Rodriguez , T. Cerba QSIP2018, Jun 2018, Stockholm, Sweden. pp.39-43, ⟨10.1016/j.infrared.2018.10.006⟩ Communication dans un congrès hal-01947798v1
	On the origin of defects during III-Sb epitaxy on Si(001) A. Trampert , M. Niehle , H. Drube , J.-B. Rodriguez , L. Cerutti 2018 E-MRS Spring meeting, Symposium V, 2018, Strasbourg, France Communication dans un congrès hal-02078642v1
	Development of GaSbBi for the Fabrication of Mid-IR Laser Diodes O. Delorme , L. Cerutti , E. Luna , R. Kudrawiec , J. Kopaczek 14th International Conference on Mid-IR Optoelectronics: Materials and Devices MIOMD-XIV (MIOMD 2018), 2018, Flagstaff, United States Communication dans un congrès hal-02078153v1
	Near-field radiative heat transfer experiments for thermophotovoltaic conversion: temperature and material dependence Christophe Lucchesi , Rodolphe Vaillon , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio GDRe workshop on Thermal Nanosciences and NanoEngineering, Oct 2018, Lyon, France Communication dans un congrès hal-01932675v1
	Mid-IR Optoelectronic devices epitaxially grown on Silicon E. Tournié , A. N. Baranov , L. Cerutti , J.-B. Rodriguez , R. Teissier Mid-IR Optoelectronic devices epitaxially grown on Silicon, CLEO 2018, 2018, San Jose, United States Communication dans un congrès hal-02078610v1
	III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti 34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France Communication dans un congrès hal-01910543v1
	A general III-V/Si growth process description Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France Communication dans un congrès hal-01910535v1
	III-V semiconductor plasmonics for microfluidic molecular sensing M. Bomers , F. Barho , B. Charlot , A. Mezy , L. Cerutti Final conference of PROMIS, Photonics by the Lake, 2018, Windermere, United Kingdom Communication dans un congrès hal-02084307v1
	Etude expérimentale du transfert radiative en champ proche pour la conversion thermophotovoltaïque Christophe Lucchesi , Pierre-Olivier Chapuis , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio Journées Nationales sur l’Energie Solaire, Jun 2018, Villeurbanne, France Communication dans un congrès hal-01832256v1
	Near-field radiative heat transfer experiments for thermophotovoltaic conversion: temperature and material dependence Christophe Lucchesi , Rodolphe Vaillon , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio Eurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland Communication dans un congrès hal-02021385v1
	Investigation of antimonide-based semiconductors for high-efficiency multi-junction solar cells Stéphanie Parola , Alexandre Vauthelin , Frédéric Martinez , Julie Tournet , Joanna El Husseini 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, France. pp.0937-0942 Communication dans un congrès hal-02052823v1
	Thermophotovoltaic devices for solar and thermal energy conversion Rodolphe Vaillon , Christophe Lucchesi , Etienne Blandre , Pierre-Olivier Chapuis , Dilek Cakiroglu Journées Nationales sur l'Énergie Solaire «Congrès JNES 2018», Jun 2018, Villeurbanne, France Communication dans un congrès hal-01841462v1
	Recent advances in the molecular beam epitaxy of GaSbBi alloys and quantum wells O. Delorme , L. Cerutti , R. Kudrawiec , E. Luna , J. Kopaczek 20th International Conference on Molecular-Beam Epitaxy (MBE 2018), 2018, Shanghai, China Communication dans un congrès hal-02078204v1
	Quantum cascade lasers grown on silicon A. N. Baranov , H. Nguyen-Van , Z. Loghmari , L. Cerutti , J.-B. Rodriguez 18th Int. Conf. on Laser Optics, 2018, St Petersburg, Russia Communication dans un congrès hal-02078298v1
	AlInAsSb for GaSb-based multi-junction solar cells J. Tournet , Y. Rouillard , E. Tournié Photonics West 2018, 2018, San Francisco, United States Communication dans un congrès hal-02080336v1
	Plasmonique tout-semi-conducteur pour les applications du moyen-infrarouge F. Barho , M. Bomers , F. Gonzalez-Posada , L. Cerutti , E. Tournié Congrès de la Société Française d’Optique, 2018, Toulouse, France Communication dans un congrès hal-02084338v1
	Investigation of GaSb solar cell with an AlGaAsSb window layer for applications as a bottom subcell of 4-junction solar cells Joanna Kret , Stéphanie Parola , Alexandre Vauthelin , Julie Tournet , Yves Rouillard Journées Nationales du Photovoltaïque, Dec 2018, Dourdan, France Communication dans un congrès hal-02061904v1
	GaP Template on Si for Solar Water Splitting: surface energy engineering Laurent Pedesseau , Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban nanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain Communication dans un congrès hal-01909068v1
	A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti 20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S) Communication dans un congrès hal-01910554v1
	Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban , Yoan Léger 20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S) Communication dans un congrès hal-01910556v1
	Sb-based IR Detector and Emitter Materials E. Tournié , A. N. Baranov , L. Cerutti , J.-P. Perez , J.-B. Rodriguez Sb-based IR Detector and Emitter Materials, CSWeek 2018, 2018, Boston, United States Communication dans un congrès hal-02078599v1
	Design of efficient photovoltaic cells for near-field thermophotovoltaics Daniel Milovich , John Desutter , Dilek Cakiroglu , Christophe Lucchesi , Pierre-Olivier Chapuis Eurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland Communication dans un congrès hal-02021380v1
	Lasers à semiconducteurs intégrés sur Silicium E. Tournié Journées Nationales sur l’Optique Guidée (JNOG), 2017, Limoges, France Communication dans un congrès hal-01905155v1
	III-V/Si 3D crystal growth: a thermodynamic description Ida Lucci , Simon Charbonnier , Maxime Vallet , Tony Rohel , Rozenn Bernard Energy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany Communication dans un congrès hal-01708282v1
	Plasmonic bio-sensing based on highly doped semiconductors María-José Milla Rodrigo , Franziska Barho , Fernando Gonzalez-Posada Flores , Laurent Cerutti , Jean-Baptiste Rodriguez Optics + Photonics (SPIE), 2017, San Diego, United States Communication dans un congrès hal-01905149v1
	GaSbBi/GaSb quantum well laser diodes Olivier Delorme , Laurent Cerutti , Esperanza Luna , Achim Trampert , Eric Tournié 8th International Workshop on Bismuth-Containing Semiconductors, 2017, Marburg, Germany Communication dans un congrès hal-02327190v1
	Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Sylvain David , Jean-Luc Rouvière 2017 EMRS Fall Meeting, 2017, Warsaw, Poland Communication dans un congrès hal-01891383v1
	Transmission Electron Microscopy of Ga(Sb,Bi) Epilayers and Quantum Wells for Optoelectronic Applications E. Luna , A. Trampert , O. Delorme , L. Cerutti , E. Tournié 8th International Workshop on Bismuth-Containing Semiconductors, 2017, Marburg, Germany Communication dans un congrès hal-01905702v1
	High Bi-content GaSbBi alloys for mid-IR applications O. Delorme , L. Cerutti , E. Tournié , J.-B. Rodriguez CSWeek 2017, 2017, Berlin, Germany Communication dans un congrès hal-01905735v1
	GaSb oxidation for plasmonic enhanced mid-IR molecular spectroscopy M. Bomers , F. Barho , A. Mezy , M. J. Milla , L. Cerutti Nanophotonics and Micro/Nano Optics International Conference, 2017, Barcelone, Spain Communication dans un congrès hal-01905752v1
	Metamorphic III-Sb lasers epitaxially grown on Silicon L. Cerutti , J.-B. Rodriguez , A. Castellano , K. Madiomanana , G. Narcy 19th European Workshop on Molecular-Beam Epitaxy, (Euro-MBE 2017), 2017, St. Petersburg, Russia Communication dans un congrès hal-01905184v1
	GaSbBi alloys for mid-infrared optoelectronics O. Delorme , L. Cerutti , E. Tournié , J.-B. Rodriguez Freiburg Infrared Colloqium, 2017, Freiburg, Germany Communication dans un congrès hal-01905746v1
	Anti-phase boundary free GaSb layers grown on (001)-Si substrates by Metal Organic Chemical Vapor Deposition T. Cerba , M. Martin , J. Moeyaert , S. David , J.-L. Rouvière 17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), 2017, grenoble, France Communication dans un congrès hal-01891389v1
	Surface enhanced infrared absorption with highly doped InAsSb plasmonic nano-antenna arrays F. Barho , M. J. Milla , M. Bomers , Fernando Gonzalez-Posada Flores , L. Cerutti Nanophotonics and Micro/Nano Optics International Conference, 2017, Barcelone, Spain Communication dans un congrès hal-01905761v1
	Mid-IR surface enhanced absorption spectroscopy with 1D Highly Si-Doped InAsSb nano-antennas M. J. Milla , F. Gonzalez-Posada , L. Cerutti , F. Barho , M. Bomers E-MRS Spring Meeting, 2017, Strasbourg, France Communication dans un congrès hal-01905789v1
	GaSb-based lasers epitaxially grown on Si E. Tournié , L. Cerutti , J.-B. Rodriguez , A. Castellano , G. Narcy E-MRS Fall meeting, Symposium, 2017, Warsaw, Poland Communication dans un congrès hal-01905141v1
	Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications T. Cerba , M. Martin , J. Moeyaert , S. David , J.-L. Rouvière E-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland Communication dans un congrès hal-01905730v1
	Metamorphic III-Sb lasers epitaxially grown on Si substrates E. Tournié , L. Cerutti , J.-B. Rodriguez , G. Narcy , A. Castellano International School on Epitaxial Technologies of Novel materials and Nanostructures, 2017, St. Petersburg, Russia Communication dans un congrès hal-01905208v1
	Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez 13th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), 2016, Beijing, China Communication dans un congrès hal-02327267v1
	Brewster mode : optical monitoring of the semiconductor doping level Maria Jose Milla Rodrigo , Thierry Taliercio , Laurent Cerutti , Fernando Gonzalez-Posada Flores , Franziska Barho Photonic West OPTO (SPIE), 2016, San Francisco, United States Communication dans un congrès hal-01903684v1
	3.8 μm Heterogeneously Integrated III-V on Silicon Micro-Spectrometer A. Vasiliev , M. Muneeb , A. Ruocco , A. Malik , H. Chen 18th European Conference on Integrated Optics, 2016, Warsaw, Poland Communication dans un congrès hal-01903732v1
	Highly doped InAsSb plasmonic arrays for mid-infrared biosensing F. Bahro , F. Gonzalez-Posada , M. J. Milla Rodrigo , M. Bomers , L. Cerutti IEEE Nanotechnology Materials and Devices Conferences (NDMC), 2016, Toulouse, France Communication dans un congrès hal-01903761v1
	III-V lasers monolithically grown on Silicon E. Tournié IEEE Photonics Conference, 2016, Orlando, United States Communication dans un congrès hal-01905127v1
	All semiconductor plasmonics for bio-sensing M. J. Milla , F. Barho , M. Bomers , F. Gonzalez-Posada , L. Cerutti International Conference on Energy, Materials & Photonics, 2016, Troyes, France Communication dans un congrès hal-01903594v1
	GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range A. Castellano , L. Cerutti , G. Narcy , J.-B. Rodriguez , F. Lelarge 19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France Communication dans un congrès hal-01903690v1
	Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez 19th International Conference on Molecular Beam Epitaxy, 2016, Montpellier, France Communication dans un congrès hal-02327261v1
	First orientation-patterned GaSb ridge waveguides fabrication and preliminary characterization for frequency conversion in the mid-infrared Benjamin Eggleton , G. Broderick , L. Gaeta , S. Roux , L. Cerutti SPIE Photonics Europe, 2016, Brussels, France. ⟨10.1117/12.2225441⟩ Communication dans un congrès hal-01759576v1
	On the origin of threading dislocations during III-Sb epitaxy on Si(001) M. Niehle , J.-B. Rodriguez , L. Cerutti , K. Madiomanana , E. Tournié 19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France Communication dans un congrès hal-01903706v1
	GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range A. Castellano , L. Cerutti , G. Narcy , J.-B. Rodriguez , A. Garreau 43rd Int. Symp. on Compound Semiconductors (ISCS 2016), 2016, Toyama, Japan Communication dans un congrès hal-01903723v1
	Highly doped InAsSb nanoribbon on GaSb for plasmonics applications M. Milla-Rodrigo , F. Barho , L. Cerutti , E. Tournié , T. Taliercio 13th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2016, Beijing, China Communication dans un congrès hal-01903751v1
	Tuning of the localized surface plasmon wavelength in highly doped InAsSb/GaSb nanostructures María-José Milla Rodrigo , Franziska Barho , Fernando Gonzalez-Posada Flores , Laurent Cerutti , Jean-Baptiste Rodriguez Photonic West OPTO (SPIE), 2016, San Francisco, United States Communication dans un congrès hal-01903606v1
	GaSb grown by molecular beam epitaxy on silicon substrates J.-B. Rodriguez , L. Cerutti , G. Patriarche , L. Largeau , K. Madiomanana 19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France Communication dans un congrès hal-01903638v1
	Surface-enhanced infrared absorption using highly doped InAsSb/GaSb Nanostructures M. Milla-Rodrigo , F. Barho , F. Gonzalez-Posada , L. Cerutti , E. Tournié 2016 MRS (Material Research Society) Fall Meeting, 2016, Boston, United States Communication dans un congrès hal-01903778v1
	MBE growth of periodically-oriented GaSb on GaAs templates for frequency conversion in the mid-infrared wavelength range L. Cerutti , S. Roux , G. Patriarche , M. Garcia , B. Gérard 19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France Communication dans un congrès hal-01903697v1
	GaSb lasers grown on Silicon substrate for telecom application A. Castellano , L. Cerutti , G. Narcy , J.-B. Rodriguez , F. Lelarge 19th Conference on Molecular Beam epitaxy (MBE2014), 2016, Montpellier, France Communication dans un congrès hal-01903740v1
	Highly doped semiconductor plasmonics for mid-IR applications T. Taliercio , V. N’tsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié 7th International Conference on Surface Plasmon Photonics, 2015, Jérusalem, Israel Communication dans un congrès hal-01903569v1
	New Index-Coupled Distributed-Feedback Gasb-Based Lasers Diodes In The 2 to 3 µm Wavelength Range. Applications To Spectroscopy A. Vicet , Q. Gaimard , Alexandre Larrue , L. Cerutti , T. Nguyenba 3rd International Workshop on Opportunities and Challenges in Mid-Infrared Laser-based Gas Sensing (MIRSENS 3), Mar 2015, Würzburg, Germany Communication dans un congrès hal-01795440v1
	Terahertz studies of 2D and 3D topological transitions M. Marcinkiewicz , Frederic Teppe , Christophe Consejo , Nina Diakonova , Wilfried Desrat 19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, Salamanca, Spain. pp.UNSP 012037, ⟨10.1088/1742-6596/647/1/012037⟩ Communication dans un congrès hal-01249953v2
	GaSb-based MIR semiconductor materials and lasers E. Tournié IEEE 2015 Summer Topicals Meeting Series, 2015, Nassau, Bahamas Communication dans un congrès hal-01903509v1
	Observation of Fano resonances in highly doped semiconductor plasmonic resonators T. Taliercio , Vilianne N’tsame , L. Cerutti , J.-B. Rodriguez , Franziska Barho SPIE NanoScience + Engineering, 2015, San Diego, United States Communication dans un congrès hal-01903562v1
	Brewster “mode” or how to optically monitor the doping concentration in highly doped semiconductor layers T. Taliercio , L. Cerutti , E. Tournié , J. J. J Greffet , Franziska Barho META15 Conference, 2015, New York, United States Communication dans un congrès hal-01903564v1
	GaInSb/AlInSb coupled QWs on GaSb for telecom laser L. Cerutti , A. Castellano , K. Madiomanana , J.-B. Rodriguez , F. Lelarge SPIE Photonics West, Opto-2015, Novel In-Plane Semiconductor Lasers XIV, 2015, San Francisco, United States Communication dans un congrès hal-01903574v1
	1.55 µm GaSb-based lasers monolithically grown on Si substrates E. Tournié , L. Cerutti , A. Castellano , K. Madiomanana , J.-B. Rodriguez 18th Conference on Molecular Beam epitaxy (MBE2014), 2014, Flagstaff, United States Communication dans un congrès hal-01903137v1
	Épitaxie par jets moléculaires de semi-conducteurs à base d’antimoine sur substrat Si pour la photonique J.-B. Rodriguez , K. Madiomanana , A. Castellano , E. Tournié GDR PULSE, Toulouse, 2014, Toulouse, France Communication dans un congrès hal-01903148v1
	GaSb-based active zones for laser emission at 1.55µm A. Castellano , L. Cerutti , J.-B. Rodriguez , K. Madiomanana , F. Lelarge International Symposium on Compound Semiconductors (ISCS), 2014, Montpellier, France Communication dans un congrès hal-01903487v1
	Mid-IR heterogeneous silicon photonics G. Roelkens , U. Dave , A. Gassenq , N. Hattasan , C. Hu SPIE Photonics West 2014, 2014, San Francisco, United States Communication dans un congrès hal-01903127v1
	GaSb-based grating regrowth for mid-infrared optoelectronic devices L. Cerutti , J.-B. Rodriguez , Q. Gaimard , V. N’tsame-Guilengui , T. Taliercio 18th IC-MBE, 2014, Flagstaff, United States Communication dans un congrès hal-01805131v1
	Intégration épitaxiale de lasers à base de GaSb sur substrat Si pour émission du proche au moyen IR E. Tournié , L. Cerutti , A. Castellano , K. Madiomanana , J.-B. Rodriguez GDR Ondes, 2014, Orsay, France Communication dans un congrès hal-01903151v1
	Localized Surface Plasmons Resonances on GaSb-based materials for Infrared applications V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié , T. Taliercio Photonics Plamsonics Magneto-optics 2013, IMAGINENANO, 2013, Bilbao, Spain Communication dans un congrès hal-01875563v1
	GaSb VCSELs with cascaded active-region for improved output power D. Sanchez , L. Cerutti , E. Tournié 40th Int. Symp. on Compound Semiconductors 2013 (ISCS2013), 2013, Kobe, Japan Communication dans un congrès hal-01874650v1
	Metal-free plasmonics for infrared applications T. Taliercio , V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié 7th Russian-French workshop on Nanosciences and Nanotechnologies, 2013, Novosibirsk, Russia Communication dans un congrès hal-01864257v1
	GaSb-based nanostrutures and their applications E. Tournié SemiconNano 2013, 2013, Lake Arrowhead, United States Communication dans un congrès hal-01864294v1
	All-semiconductor plasmonics for mid-IR applications T. Taliercio , V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié Optics + Photonics (SPIE), 2013, San Diego, United States Communication dans un congrès hal-01864287v1
	GaAs/GaSb(001) nanostructures at the atomic scale A. Lenz , J. Schuppang , A. Gassenq , T. Taliercio , E. Tournié SPIE Photonics West, Opto-2013, 2013, San Francisco, United States Communication dans un congrès hal-01870872v1
	Sb-based compound lasers on silicon substrates Jean-Baptiste Rodriguez , L. Cerutti , K. Madiomanana , J. R. Reboul , Y. Rouillard Silicon & Photonics, 2013, Rennes, France Communication dans un congrès hal-01796958v1
	Lasers antimoniures et applications à la spectroscopie des gaz A. Vicet , Y. Rouillard , L. Cerutti , R. Teissier , A. N. Baranov JNMO, 2013, Evian, France Communication dans un congrès hal-01796970v1
	Antimonides, a key-enabling-technology for integrated infrared photonics E. Tournié , L. Cerutti , K. Madiomanana , J.-R. Reboul , J.-B. Rodriguez Chinese-German Workshop on “Nano-X Fundmental instruments and research on Novel Nanodevices” 4, 2013, Suzhou, China Communication dans un congrès hal-01864297v1
	Antimonide-based compound semiconductors and devices grown by molecular beam epitaxy E. Tournié , L. Cerutti , G. Boissier , Y. Rouillard , A. N. Baranov 17th Euro-Molecular Beam Epitaxy (Euro-MBE), 2013, Levi, Finland Communication dans un congrès hal-01797215v1
	Nano-optoelectronics applications of antimonide-based compounds E. Tournié International Nano-Optoelectronics Workshop (iNOW’2013), 2013, Cargèse, France Communication dans un congrès hal-01864291v1
	GaSb-based all-semiconductor mid-IR plasmonics T. Taliercio , V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié Photonics West (SPIE), 2013, San Francisco, United States Communication dans un congrès hal-01864230v1
	Integrated Thin-Film GaSb-based Fabry-Perot Lasers: Towards a Fully Integrated Spectrometer on a SOI Waveguide Circuit N. Hattasan , A. Gassenq , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié SPIE: Quantum Sensing and Nanophotonic Devices, 2013, San Francisco, United States. ⟨10.1117/12.2000707⟩ Communication dans un congrès hal-01798001v1
	InGaAsSb/GaSb lasers and photodetectors integrated on a silicon-on-insulator waveguide circuit for spectroscopic applications N. Hattasan , A. Gassenq , L. Cerutti , J.-B. Rodriguez , E. Tournié 2nd International workshop on opportunities and challenge in mid-infrared laser-based gas sensing (MIRSENS 2), 2012, Wroclaw, Poland Communication dans un congrès hal-01861067v1
	Mid-IR laser diodes epitaxially grown by Molecular Beam epitaxy on silicon substrates J.-B. Rodriguez , L. Cerutti , J. R. Reboul , E. Tournié 11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States Communication dans un congrès hal-01861063v1
	Pseudo-volume-plasmon into arrays of doped and un-doped semiconductors T. Taliercio , V. N’tsame Guilengui , E. Tournié 3rd International conference on meta-materials, photonic crystals and plasmonics, META12, 2012, Paris, France Communication dans un congrès hal-01861379v1
	High temperature, single mode, continuous wave operation of electrically pumped monolithic GaSb VCSELs D. Sanchez , L. Cerutti , E. Tournié 29th International Symposium on Compound Semiconductors 2012 (ISCS), 2012, Santa Barbara, United States Communication dans un congrès hal-01862986v1
	Impact of nucleation conditions on the properties of GaSb-based heterostructures grown by MBE on GaAs substrates K. Madiomanana , J.-B. Rodriguez , L. Cerutti , E. Tournié 17th Conference on Molecular Beam epitaxy (MBE2012), 2012, Nara, Japan Communication dans un congrès hal-01862182v1
	New confinement method for monolithic GaSb-VCSEL emitting in the mid-IR D. Sanchez , L. Cerutti , E. Tournié SPIE Photonics Europe 2012, 2012, Bruxelles, Belgium Communication dans un congrès hal-01861060v1
	Single mode, CW GaSb-VCSEL operating at 70°C D. Sanchez , L. Cerutti , E. Tournié 11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States Communication dans un congrès hal-01861440v1
	Surface and localized plasmons polaritons on arrays of doped and un-doped semiconductors T. Taliercio , V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié 11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States Communication dans un congrès hal-01861443v1
	Single-mode GaSb-based monolithic VCSELs grown by MBE operating in CW up to 70°C L. Cerutti , D. Sanchez , E. Tournié 17th Conference on Molecular Beam epitaxy (MBE2012), 2012, Nara, Japan Communication dans un congrès hal-01862987v1
	Single-mode operation of monolithic GaSb- VCSELs E. Tournié , D. Sanchez , L. Cerutti 2nd International workshop on opportunities and challenge in mid-infrared laser-based gas sensing (MIRSENS 2), 2012, Wroclaw, Poland Communication dans un congrès hal-01861102v1
	High temperature continuous wave operation of Sb-based monolithic EP-VCSEL with selectively etched Tunnel-junction apertures D. Sanchez , L. Cerutti , E. Tournié IEEE Conference on Laser and Electro-Optics (CLEO) 2012, 2012, San Jose, United States Communication dans un congrès hal-01862214v1
	Integrated spectrometer and integrated detectors on Silicon-on-Insulator for short-wave infrared applications E. Ryckeboer , A. Gassenq , N. Hattasan , B. Kuyken , L. Cerutti IEEE Conference on Laser and Electro-Optics (CLEO) 2012, 2012, San Jose, United States Communication dans un congrès hal-01862205v1
	Highly doped semiconductors for mid-infrared plasmonics V. Ntsame Guilengui , T. Taliercio , L. Cerutti , J.-B. Rodriguez , E. Tournié 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012), 2012, Porquerolles, France Communication dans un congrès hal-01862980v1
	CW operation at RT of Sb-based laser monolithically grown on Si substrate J.-B. Rodriguez , L. Cerutti , J. R. Reboul , E. Tournié SPIE “Quantum Sensing and Nanophotonic Devices IX", 2012, San Francisco, United States Communication dans un congrès hal-01861107v1
	Metamorphic 6.3 Å GaInSb templates grown on GaAs substrates for mid-IR lasers Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié European Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 2011, Alpe d'Huez, France Communication dans un congrès hal-01858325v1
	Sb-based laser grown on Si substrate operating under cw above room temperature Laurent Cerutti , Jean-Baptiste Rodriguez , J. R. Reboul , Eric Tournié 38th Int. Symp. on Compound Semiconductors 2011, (ISCS2011), 2011, Berlin, Germany Communication dans un congrès hal-01858339v1
	Current developments in MBE growth of highly mismatched materials J.-B. Rodriguez , L. Cerutti , J. R. Reboul , E. Tournié European Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 2011, Alpe d’Huez, France Communication dans un congrès hal-01831686v1
	The InAs/GaSb/InSb short-period superlattice: an active zone for mid-IR lasers E. Tournié , A. Gassenq , L. Cerutti SPIE Photonics West, Opto-2011, “Quantum Sensing and Nanophotonic Devices VIII”, 2011, San Francisco, United States Communication dans un congrès hal-01831665v1
	Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications N. Hattasan , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié , Dries van Thourhout Conference on Quantum Sensing and Nanophotonic Devices VIII, Jan 2011, San Francisco, CA, United States. pp.79451K, ⟨10.1117/12.874659⟩ Communication dans un congrès hal-00641358v1
	Lasers moyen-infrarouge à base d’antimoine réalisés sur substrat Silicium J.-B. Rodriguez , J. R. Reboul , L. Cerutti , E. Tournié 13ème Journées Nano, Micro et Optoélectronique (JNMO 2010), 2010, Les Issambres, France Communication dans un congrès hal-01831640v1
	Sb-based laser sources grown by molecular beam epitaxy on silicon substrates J.-B. Rodriguez , L. Cerutti , P. Grech , G. Boissier , G. Narcy Photonics West 2010, Novel In-Plane Semiconductor Lasers IX, 2010, San Francisco, United States Communication dans un congrès hal-01830461v1
	MBE growth of highly tensile strained Ga(In)As/GaSb quantum wells A. Gassenq , E. Luna , T. Taliercio , A. Trampert , E. Tournié 16th Int. Conf. on Molecular-Beam Epitaxy (MBE16), 2010, Berlin, Germany Communication dans un congrès hal-01830962v1
	Highly Tensile-Strained Ga0.5In0.5As/GaSb Heterostructures T. Taliercio , A. Gassenq , E. Luna , A. Trampert , E. Tournié 37th International Symposium on Compound Semiconductors (ISCS2010), 2010, Takamatsu, Japan Communication dans un congrès hal-01830920v1
	GaSb based,1.55 µm laser monolithically integrated on Silicon substrates operating at room temperature L. Cerutti , J.-B. Rodriguez , E. Tournié 22nd Int. Conf. on InP and Related Materials (IPRM 2010), 2010, Takamatsu, Japan Communication dans un congrès hal-01830913v1
	Interfaces as design tools for InAs/Gasb/InSb short-period superlattice for mid-infrared emission S. Ben Rejeb , M. Debbichi , M. Said , A. Gassenq , E. Tournié Conference MADICA 2010, 2010, Tabarka, Tunisia Communication dans un congrès hal-01830937v1
	Tensile-Strained Ga1-xInxAs / GaSb Heterostructures for Mid-IR Applications T. Taliercio , E. Luna , A. Gassenq , A. Trampert , E. Tournié 10th Mid-Infrared Optcal Materials and Devices International Conference (MIOMD-10), 2010, Shanghai, China Communication dans un congrès hal-01831106v1
	Effect of asymmetric interface profile on the electronic properties of InAs/GaSb/InSb short-period superlattice structures S. Ben Rejeb , M. Debbichi , M. Saîd , A. Gassenq , E. Tournié International Conference on Nano-Materials and Renewable Energie, 2010, Safi, Morocco Communication dans un congrès hal-01830997v1
	GaSb based, 1.55 µm laser monolithically integrated on Silicon substrate operating at room temperature L. Cerutti , J.-B. Rodriguez , Eric Tournié IEEE Indium Phosphide and Related Materials (IPRM) 2010, 2010, Kagawa, Japan Communication dans un congrès hal-01828237v1
	Heterogeneous Integration of GaSb-based epitaxy on silicon-on-insulator: towards mid-infrared photonic integrated circuits for environmental and bio-medical applications N. Hattasan , L. Cerutti , J.-B. Rodriguez , E. Tournié , D. Van Thourhout 10th MIOMD Conference, 2010, Shanghai, China Communication dans un congrès hal-01831108v1
	Sb-based lasers grown on highly mismatched substrates Laurent Cerutti , Jean-Rémy Reboul , Jean-Baptiste Rodriguez , Eric Tournié Mid-Infrared Optoelectronics: Materials and Devices (MIOMD X), 2010, Shanghai, China Communication dans un congrès hal-01831036v1
	A Faraday Optical Isolator in the 9-10 µm range for Quantum Cascade Laser applications L. Hilico , E. Tournié , A. Besse , A. Orgongozo Physique Atomique, Moléculaire et Optique, 2010, Ors, France Communication dans un congrès hal-01830468v1
	Growth optimization of InAs/GaSb/InSb short-period super-lattices as active regions of mid-IR lasers A. Gassenq , L. Cerutti , E. Tournié 16th Int. Conf. on Molecular-Beam Epitaxy (MBE16), 2010, Berlin, Germany Communication dans un congrès hal-01830958v1
	GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy L. Cerutti , A. Ducanchez , G. Narcy , P. Grech , G. Boissier 15th Int. Conf. on Molecular-Beam Epitaxy (MBE-15), 2009, Vancouver, Canada Communication dans un congrès hal-01826633v1
	Structural properties and strain relaxation mechanisms of MBE grown InSb quantum dots on GaSb substrates B. Satpati , V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié 2nd Int. Conference on Physics at Surfaces and Interfaces (PSI2009), 2009, Puri, India Communication dans un congrès hal-01827627v1
	Mid-IR Sb-based emitters and detectors E. Tournié WOCSDICE 2009, 2009, Malaga, Spain Communication dans un congrès hal-01826607v1
	Nanostructure Devices for Optoelectronics E. Tournié E-nano2009, 2009, Choroni, Venezuela Communication dans un congrès hal-01826612v1
	Room Temperature, Continuous Wave Operation of an Sb-Based Laser Grown on GaAs Substrate L. Cerutti , J.-B. Rodriguez , P. Grech , Eric Tournié Conference on Lasers and Electro-Optics (CLEO 2009), 2009, Baltimore, United States Communication dans un congrès hal-01828223v1
	Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrate J.-B. Rodriguez , L. Cerutti , E. Tournié Conference on Lasers and Electro-Optics (CLEO 2009), 2009, Baltimore, United States Communication dans un congrès hal-01828217v1
	Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular-beam-epitaxy E. Luna , B. Satpati , B.H. Hong , S. I. Rybchenko , Jean-Baptiste Rodriguez 15th European Workshop on Molecular-Beam Epitaxy (Euro-MBE 15), 2009, Zakopane, Poland Communication dans un congrès hal-01827641v1
	Interface stability of metastable quaternary (Ga,In)(As,Sb) quantum wells E. Luna , Y. Rouillard , L. Cerutti , E. Tournié , A. Trampert 36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 2009, Santa Barbara, United States Communication dans un congrès hal-01798417v1
	GaSb-based mid-IR electrically-pumped VCSELs covering the wavelength range from 2.3 to 2.7 µm Arnaud Ducanchez , Laurent Cerutti , Pierre Grech , Frédéric Genty , Eric Tournié CLEO Europe - EQEC 2009, Jun 2009, Munich, Germany. pp.1-1, ⟨10.1109/CLEOE-EQEC.2009.5192675⟩ Communication dans un congrès hal-00429890v1
	Mid-IR GaSb-based lasers on highly mismatched GaAs and Si substrates Jean-Baptiste Rodriguez , L. Cerutti , E. Tournié Workshop on Compound Semiconductor Devices and integrated Circuits (WOCSDICE 2009), 2009, Malaga, Spain Communication dans un congrès hal-01827647v1
	Mid-IR Sb-based lasers grown on highly mismatched GaAs and Si substrates J.-B. Rodriguez , L. Cerutti , E. Tournié 36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 2009, Santa Barbara, United States Communication dans un congrès hal-01828229v1
	GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy Laurent Cerutti , A. Ducanchez , G. Narcy , P. Grech , G. Boissier International Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada Communication dans un congrès hal-01785734v1
	InAs/GaSb/InSb short-period superlattice diode lasers emitting near 3.3 µm at room temperature A. Gassenq , L. Cerutti , A. N. Baranov , E. Tournié MIOMD IX, 2008, Freiburg, Germany Communication dans un congrès hal-01826454v1
	MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones A. Gassenq , L. Cerutti , Alexei Baranov , E. Tournié International Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada Communication dans un congrès hal-01825818v1
	Conduction-band G-L crossover in III-V GaSb SAQDs induced by lattice mismatch strain S. Rybchenko , R. Gupta , K. Lai , I. Itskevich , S Haywood One-Day Quantum Dot meeting, Imperial College, London, U.K., 11 January 2008, 2008, London, United Kingdom Communication dans un congrès hal-01785078v1
	EFM/AFM studies of laser diodes for 2.6 – 3.5 µm range with InSb/InAs/GaSb superlattice in active area: design and principal properties A. N. Titkov , A. V. Ankudinov , M. S. Dunaevskii , K. S. Ladutenko , V. P. Evtikvhiev XII International Symposium on Nanophysics and Nanoelectronics, 2008, Nizhny Novgorod, Russia Communication dans un congrès hal-01826457v1
	Nouveau laser moyen infra-rouge à super-réseaux InAs/GaSb pour une émission entre 3 et 4 µm A. Gassenq , L. Cerutti , A. N. Baranov , E. Tournié 12èmes Journées Nano et Micro-électronique et Optoélectronique, 2008, Oléron, France Communication dans un congrès hal-01826580v1
	Recent progress on electrically-pumped GaSb-based VCSELs emittingabove 2 µm for sensing applications F. Genty , L. Cerutti , A. Ducanchez , P. Grech , Eric Tournié MIOMD IX, 2008, Freiburg, Germany Communication dans un congrès hal-01785770v1
	Strain relaxation mechanism in the MBE grown InSb/GaSb material system B. Satpati , E. Luna , A. Trampert , N. Deguffroy , V. Tasco International Symposium on Compound Semiconductors 2008 (ISCS2008), 2008, Rust, Germany Communication dans un congrès hal-01826523v1
	Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy E. Luna , F. Ishikawa , B. Satpati , Jean-Baptiste Rodriguez , E. Tournié International Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada Communication dans un congrès hal-01825828v1
	Epitaxie par jets moléculaires de boîtes quantiques InSb N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati , E. Luna 12èmes Journées Nano et Micro-électronique et Optoélectronique, 2008, Oléron, France Communication dans un congrès hal-01826576v1
	720 mW continuous wave room temperature operation diode laser emitting at around 2.4μm Yves Rouillard , Eric Tournié , Michel Krakowski Technologies for optical countermeasures II (SPIE), 2005, Bruges, Belgium Communication dans un congrès hal-01798520v1
	Carrier recombination processes in GaAsN: from the dilute limit to alloying Romuald Intartaglia , Thierry Taliercio , Pierre Lefebvre , Thierry Bretagnon , Thierry Guillet E-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩ Communication dans un congrès hal-01310044v1
	Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers Romuald Intartaglia , Thierry Taliercio , Bernard Gil , Pierre Lefebvre , Pierre Valvin 5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩ Communication dans un congrès hal-01312489v1
	Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN Thierry Taliercio , Bernard Gil , Pierre Lefebvre , Marie-Amandine Pinault , Eric Tournié International Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.778-781, ⟨10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H⟩ Communication dans un congrès hal-01319577v1

	MIR Sb-based Interband cascade lasers on metamorphic substrates Maeva Fagot , Daniel Andres Diaz-Thomas , Audrey Gilbert , Michel Ramonda , Gad Kombila International Nano-Optoelectronics Workshop (iNOW) 2023, Jul 2023, Würzburg, Germany. 2023 Poster de conférence hal-04282939v1
	Type-II Interband cascade lasers grown on (100) GaAs substrates Maeva Fagot , Daniel Andres Diaz Thomas , Michel Ramonda , Gad Kombila , Jean-Baptiste Rodriguez 21st European Workshop on Molecular Beam Epitaxy (EuroMBE 2023), Apr 2023, Madrid, Spain. 2023 Poster de conférence hal-04282761v1
	ICLs à 3,3 µm sur substrats de GaSb, GaAs et Si (001) Maeva Fagot , Daniel Andres Diaz-Thomas , Audrey Gilbert , Michel Ramonda , Gad Kombila GDR MatEpi 2023, Jul 2023, Paris, France. 2023 Poster de conférence hal-04282846v1
	Epitaxy and Characterization of InP/InGaAs Tandem Solar Cells grown by MOVPE on InP and Si Substrate Stefano Soresi , Mattia da Lisca , Claire Besançon , Nicolas Vaissiere , Alexandre Larrue 8th World Conference on Photovoltaic Energy Conversion (WCPEC-8), Sep 2022, Milan, Italy Poster de conférence hal-03878592v1
	Caractérisation et modélisation d’une cellule tandem AlGaAsSb/GaSb Lucas Gavotto , Joanna Kret , S. Parola , Frédéric Martinez , Yves Rouillard Journées Nationales du Photovoltaïque, Nov 2021, Dourdan, France Poster de conférence hal-03641823v1
	In situ determination of the optimized growth conditions of GaSbBi alloys Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez 10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France Poster de conférence hal-02327276v1
	Ga(In)SbBi alloys for mid-IR applications: growth and characterization Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez 16èmes journées Nano, Micro et Optoélectronique, 2018, Cap Esterel, France Poster de conférence hal-02327294v1
	GaSbBi/GaSb quantum wells for Mid-Infrared: growth and characterization Olivier Delorme , Laurent Cerutti , Robert Kudrawiec , Esperanza Luna , J. Kopaczek 34th International Conference on the Physics of Semiconductors, 2018, Montpellier, France Poster de conférence hal-02327289v1
	Growth and characterization of high Bi-content GaSbBi alloys Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez 19th European Workshop on Molecular Beam Epitaxy, 2017, Saint-Petersburg, Russia Poster de conférence hal-02327303v1

	GaSbBi alloys and heterostructures: fabrication and properties O. Delorme , L. Cerutti , R. Kudrawiec , Esperanza Luna , J. Kopaczek Wang, Shumin and Lu, Pengfei. Bismuth-Containing Alloys and Nanostructures, Springer Series in Materials Science, pp.125-161, 2019, 978-981-13-8077-8. ⟨10.1007/978-981-13-8078-5_6⟩ Chapitre d'ouvrage hal-02326182v1
	Molecular-Beam Epitaxy of Antimonides for Optoelectronic Devices Eric Tournié Molecular Beam Epitaxy, John Wiley & Sons Ltd, pp.233-246, 2019, 978-1-119-35502-1. ⟨10.1002/9781119354987.ch14⟩ Chapitre d'ouvrage hal-02342601v1
	GaSb Lasers Grown on Silicon Substrate for Telecom Applications Eric Tournié , Andrea Castellano , Karine Madiomanana , Grégoire Narcy , Alexandre Garreau Molecular Beam Epitaxy, Elsevier, pp.625-635, 2018, 978-0-12-812136-8. ⟨10.1016/B978-0-12-812136-8.00029-3⟩ Chapitre d'ouvrage hal-02342603v1
	Epitaxial Integration of Antimonide-Based Semiconductor Lasers on Si Eric Tournié , Jean-Baptiste Rodriguez , Laurent Cerutti , Roland Teissier , Alexei Baranov Silicon Photonics, 99, Academic Press, pp.1-25, 2018, Semiconductor and Semimetals, 978-0-12-815099-3. ⟨10.1016/bs.semsem.2018.08.002⟩ Chapitre d'ouvrage hal-02342602v1
	Mid-Infrared Semiconductor Lasers Eric Tournié , Alexei Baranov Advances in Semiconductor Lasers, 86, Academic Press, pp.183-226, 2012, Semiconductors and Semimetals, 978-0-12-391066 0. ⟨10.1016/B978-0-12-391066-0.00005-8⟩ Chapitre d'ouvrage hal-02342607v1
	Photo- and electro- luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes A. Hierro , J.-M. Ulloa , J. Miguel-Sanchez , A., Guzman Fernandez , Achim Trampert Nitrides and diluted nitrides: Growth, physics and devices, Research Signpost, pp.77-98, 2007, 978-81-7895-250-5 Chapitre d'ouvrage hal-02342608v1
	Mixed III-V-N semiconductors: a challenge for tomorrow? E. Tournié , Bernard Gil Low-Dimensional Nitride Semiconductors, Oxford University Press, pp.415-455, 2002, 9780198509745 Chapitre d'ouvrage hal-02342609v1

	Rapport d’évaluation de l’unité FEMTO-ST – Franche-Comté Électronique, Mécanique, Thermique et Optiques - Sciences et Technologies Eric Tournié , Jean-Marc Allain , Mathieu Arnoux , Nathalie Bardou , Skandar Basrour C2023-EV-0251215K-DER-PUR230023102-RF, Hcéres. 2023, pp.1-51 Rapport hal-04505233v1

	Mid-infrared Optoelectronics Eric Tournié , Laurent Cerutti Woodhead Publishing. , 2019, 9780081027097 Ouvrages hal-02369706v1
	Semiconductor lasers Alexei Baranov , Eric Tournié Woodhead Publishing Limited, 33, 2013, Woodhead Publishing Series in Electronic and Optical Materials, 9780857091215. ⟨10.1533/9780857096401⟩ Ouvrages hal-02342605v1

	Harnessing near-field thermal photons with efficient photovoltaic conversion C Lucchesi , D. Cakiroglu , Jean-Philippe Perez , T. Taliercio , E. Tournié 2019 Pré-publication, Document de travail hal-02409826v1

Eric TOURNIE

Publications

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

Quantum cascade lasers monolithically integrated on germanium

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Analysis of the Optical Coupling Between GaSb Diode Lasers and Passive Waveguides: A Step Toward Monolithic Integration on Si Platforms

Characterization and Simulation of AlGaAsSb/GaSb Tandem Solar Cell

Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

Impact of the ridge etching‐depth on GaSb‐based laser diodes

Thermal performance of GaInSb quantum well lasers for silicon photonics applications

Quantum well interband semiconductor lasers highly tolerant to dislocations

Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates

Near-Field Thermophotovoltaic Conversion with High Electrical Power Density and Efficiency above 14%

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

Modeling and Characterization of an MBE-Grown Concentrator P-N GaSb Solar Cells Using a Pseudo-3D Model

InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

Zinc-blende group III-V/group IV epitaxy: Importance of the miscut

3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth

Massless Dirac fermions in III-V semiconductor quantum wells

Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Indium antimonide photovoltaic cells for near-field thermophotovoltaics

Type I GaSb 1-x Bi x /GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment

Molecular-beam epitaxy of GaSb on 6°-offcut (001) Si using a GaAs nucleation layer

Selective growth of ordered hexagonal InN nanorods

Optical properties and dynamics of excitons in Ga(Sb,Bi)/GaSb quantum wells: evidence for a regular alloy behavior

Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics

GaSb-based solar cells for multi-junction integration on Si substrates

Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µm

The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates

Molecular-beam epitaxy of GaInSbBi alloys

On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study

A Stress-Free and Textured GaP Template on Silicon for Solar Water Splitting

In situ determination of the growth conditions of GaSbBi alloys

Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well

Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics

Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water

Universal description of III-V/Si epitaxial growth processes

Quantum cascade lasers grown on silicon

Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness

Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications

Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations

Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer

Low-loss orientation-patterned GaSb waveguides for mid-infrared parametric conversion

Surface-enhanced infrared absorption with Si-doped InAsSb/GaSb nano-antennas

Growth and characterization of AlInAsSb layers lattice-matched to GaSb

GaSbBi/GaSb quantum well laser diodes

Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys

Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si

Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs "Three-Layer" Gapless Quantum Wells

X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

III-V-on-silicon integrated micro - spectrometer for the 3 μm wavelength range

Metamorphic III–V semiconductor lasers grown on silicon

Mid-infrared characterization of refractive indices and propagation losses in GaSb/Al X Ga 1−X AsSb waveguides

Silicon surface preparation for III-V molecular beam epitaxy

Fano-like resonances sustained by Si doped InAsSb plasmonic resonators integrated in GaSb matrix

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55- μ m

Brewster "mode" in highly doped semiconductor layers: an all-optical technique to monitor doping concentration

Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range

Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm

Mid-IR GaSb-Based Bipolar Cascade VCSELs

Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures

Effects of low temperature on the cold start gaseous emissions from light duty vehicles fuelled by ethanol-blended gasoline

Recombination channels in 2.4–3.2 µm GaInAsSb quantum-well lasers

Silicon-based heterogeneous photonic integrated circuits for the mid-infrared

Mid-IR GaSb-based monolithic vertical-cavity surface-emitting lasers

Online characterization of regulated and unregulated gaseous and particulate exhaust emissions from two-stroke mopeds: A chemometric approach

Localized surface plasmon resonances in highly doped semiconductors nanostructures

Single-Mode Monolithic GaSb Vertical-Cavity Surface-Emitting Laser

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET