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Eric Joubert

27

Documents

Affiliations actuelles

Publications

	PHM method for detecting degradation of GaN HEMT ON resistance, application to power converter H. Boulzazen , Chawki Douzi , Eric Joubert , Pascal Dherbécourt , Moncef Kadi e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2022, 2, pp.100060. ⟨10.1016/j.prime.2022.100060⟩ Article dans une revue hal-03872112v1
	A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications Chawki Douzi , Moncef Kadi , Moncef Kadi , Pascal Dherbécourt , Mohamed Akram Besserour Microelectronics Reliability, 2022, 138, pp.114777. ⟨10.1016/j.microrel.2022.114777⟩ Article dans une revue hal-03882052v1
	Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress Niemat Moultif , Olivier Latry , Eric Joubert , Mohamed Ndiaye , Christian Moreau IEEE Transactions on Power Electronics, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩ Article dans une revue hal-03174499v1
	Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating Niemat Moultif , Sébastien Duguay , O. Latry , M. Ndiaye , Eric Joubert Microelectronics Reliability, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩ Article dans une revue hal-03469148v1
	In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Mohamed Lamine Masmoudi , Joubert Eric IET Circuits, Devices & Systems, 2020, 14 (2), pp.222-228. ⟨10.1049/iet-cds.2018.5509⟩ Article dans une revue hal-04355283v1
	Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics Wadia Jouha , Mohamed Lamine Masmoudi , Ahmed El Oualkadi , Eric Joubert , Pascal Dherbécourt IEEE Transactions on Device and Materials Reliability, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩ Article dans une revue hal-03174373v1
	Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy Niemat Moultif , Andres Echeverri , Dominique Carisetti , O. Latry , Eric Joubert IEEE Transactions on Device and Materials Reliability, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩ Article dans une revue hal-02614080v1
	S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application Niemat Moultif , O. Latry , Mamadou Ndiaye , Tristan Neveu , Eric Joubert Microelectronics Reliability, 2019, 100-101, pp.113434. ⟨10.1016/j.microrel.2019.113434⟩ Article dans une revue hal-02380186v1
	An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET Wadia Jouha , Pascal Dherbécourt , Ahmed El Oualkadi , Eric Joubert , Mohamed Lamine Masmoudi International Journal of Information Science & Technology, 2019, ⟨10.57675/IMIST.PRSM/ijist-v3i1.44⟩ Article dans une revue hal-02295925v1
	Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi IEEE Transactions on Power Electronics, 2018, 33 (11), pp.9130-9133. ⟨10.1109/TPEL.2018.2822939⟩ Article dans une revue hal-02177905v1
	Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures Niemat Moultif , Alexis Divay , Eric Joubert , O. Latry Engineering Failure Analysis, 2017, 81, pp.69 - 78. ⟨10.1016/j.engfailanal.2017.07.014⟩ Article dans une revue hal-01766076v1
	Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures Niemat Moultif , Eric Joubert , Mohamed Lamine Masmoudi , O. Latry Microelectronics Reliability, 2017, 76-77, pp.243 - 248. ⟨10.1016/j.microrel.2017.07.013⟩ Article dans une revue hal-01765955v1
	Reliability Study of Mechatronic Power Components Using Spectral Photon Emission Microscopy Niemat Moultif , Eric Joubert , O. Latry Advanced Electromagnetics, 2016, 5 (3), pp.20. ⟨10.7716/aem.v5i3.380⟩ Article dans une revue hal-02177964v1
	Temperature and Dilatation Estimation for Modern Semiconductor Devices Eric Joubert , O. Latry , Jean-Philippe Roux Sensors & Transducers., 2015, 184 (1), pp.130-135 Article dans une revue hal-02178029v1
	Comparison of different feedback signals used in one stage PMD compensators for different modulation formats Guillaume Ducournau , O. Latry , E. Joubert , M. Ketata IEEE Transactions on Communications, 2008, 56, pp.1722-1728. ⟨10.1109/TCOMM.2008.060476⟩ Article dans une revue hal-00356948v1
	The chemistry of DeNOx reactions over Pt/Al2O3: the oxime route to N2 or N2O. E. Joubert , Xavier Courtois , Patrice Marecot , Christine Canaff , Daniel Duprez Journal of Catalysis, 2006, 243 (2), pp.252-262. ⟨10.1016/j.jcat.2006.07.018⟩ Article dans une revue hal-00289455v1
	Magnetic susceptibility of P+N junctions in correlation with the nature of silicon substrate: crystalline or pre-amorphised M. Abdelaoui , M. Idrissi-Benzohra , E. Joubert , M. Benzohra , F. Olivié Materials Science and Engineering: B, 2003, 102 (1-3), pp.370-375. ⟨10.1016/S0921-5107(02)00623-2⟩ Article dans une revue hal-02138087v1

	Temperature estimation of high-electron mobility transistors AlGaN/GaN O. Latry , Eric Joubert , Tristan Neveu , Niemat Moultif , Mohamed Ndiaye 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.265-268, ⟨10.1109/MELCON.2018.8379105⟩ Communication dans un congrès hal-02131183v1
	SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations Niemat Moultif , Eric Joubert , Olivier Latry 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.260-264, ⟨10.1109/MELCON.2018.8379104⟩ Communication dans un congrès hal-02181679v1
	A new extraction method of SiC power MOSFET threshold voltage using a physical approach Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi 2017 International Conference on Electrical and Information Technologies (ICEIT), Nov 2017, Rabat, France. pp.1-6, ⟨10.1109/EITech.2017.8255289⟩ Communication dans un congrès hal-02177925v1
	Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures Niemat Moultif , Eric Joubert , Mohamed Lamine Masmoudi , O. Latry 2017 Annual Reliability and Maintainability Symposium (RAMS), Jan 2017, Orlando, France. ⟨10.1109/ram.2017.7889732⟩ Communication dans un congrès hal-01765953v1
	An Extraction Method of SiC Power MOSFET Threshold Voltage Ahmed Eloualkaki , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi , Wadia Jouha 3rd International Conference on Electrical and Information Technologies, Nov 2017, Rabat, Morocco. ⟨10.1007/978-3-030-05276-8_2⟩ Communication dans un congrès hal-02295944v1
	Static behavior analysis of silicon carbide power MOSFET for temperature variations Wadia Jouha , Pascal Dherbécourt , Eric Joubert , Ahmed El Oualkadi 2016 International Conference on Electrical and Information Technologies (ICEIT), May 2016, Tangiers, Morocco. pp.276-280, ⟨10.1109/EITech.2016.7519605⟩ Communication dans un congrès hal-02173722v1

	Analyse par électroluminescence des dégradations de transistor MOSFET en SiC Tien Anh Nguyen , Echeverri Andres , Mbarek Safa , Niemat Moultif , Pascal Dherbécourt Symposium de Génie Electrique 2016 - SGE2016, Jun 2016, Grenoble, France Poster de conférence hal-01696225v1

	Reliability and Qualification Tests for High-Power MOSFET Transistors Niemat Moultif , Mohamed Lamine Masmoudi , Eric Joubert , O. Latry Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.155--197, 2017, ⟨10.1016/b978-1-78548-261-8.50005-x⟩ Chapitre d'ouvrage hal-01927246v1
	Reliability Study of High-Power Mechatronic Components by Spectral Photoemission Microscopy Niemat Moultif , Alexis Divay , Eric Joubert , O. Latry Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.241--271, 2017, ⟨10.1016/b978-1-78548-261-8.50008-5⟩ Chapitre d'ouvrage hal-01927247v1
	Internal Temperature Measurement of Electronic Components Eric Joubert , Olivier Latry , Pascal Dherbécourt , Maxime Fontaine , Christian Gautier Abdelkhalak El Hami & Philippe Pougnet (Eds). Embedded Mechatronic Systems 1, Elsevier, pp.165-184, 2015, 978-1-78548-013-3. ⟨10.1016/B978-1-78548-013-3.50007-3⟩ Chapitre d'ouvrage hal-02173702v1