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Number of documents

24

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Journal articles14 documents

  • Niemat Moultif, Sébastien Duguay, O. Latry, M. Ndiaye, Joubert Eric. Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating. Microelectronics Reliability, Elsevier, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩. ⟨hal-03469148⟩
  • Niemat Moultif, Olivier Latry, Eric Joubert, Mohamed Ndiaye, Christian Moreau, et al.. Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩. ⟨hal-03174499⟩
  • Wadia Jouha, Mohamed Lamine Masmoudi, Ahmed El Oualkadi, Eric Joubert, Pascal Dherbécourt. Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics. IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩. ⟨hal-03174373⟩
  • Niemat Moultif, Andres Echeverri, Dominique Carisetti, O. Latry, Eric Joubert. Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy. IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩. ⟨hal-02614080⟩
  • N. Moultif, O. Latry, Mamadou Ndiaye, T. Neveu, E. Joubert, et al.. S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application. Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113434. ⟨10.1016/j.microrel.2019.113434⟩. ⟨hal-02380186⟩
  • Wadia Jouha, Pascal Dherbécourt, Ahmed El Oualkadi, Joubert Eric, M Masmoudi. An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET. International Journal of Information Science & Technology, iJIST, 2019. ⟨hal-02295925⟩
  • Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Eric Joubert, Mohamed Lamine Masmoudi. Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2018, 33 (11), pp.9130-9133. ⟨10.1109/TPEL.2018.2822939⟩. ⟨hal-02177905⟩
  • N. Moultif, E. Joubert, M. Masmoudi, O. Latry. Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures. Microelectronics Reliability, Elsevier, 2017, 76-77, pp.243 - 248. ⟨10.1016/j.microrel.2017.07.013⟩. ⟨hal-01765955⟩
  • Niemat Moultif, Alexis Divay, Eric Joubert, O. Latry. Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures. Engineering Failure Analysis, Elsevier, 2017, 81, pp.69 - 78. ⟨10.1016/j.engfailanal.2017.07.014⟩. ⟨hal-01766076⟩
  • N. Moultif, E. Joubert, O. Latry. Reliability Study of Mechatronic Power Components Using Spectral Photon Emission Microscopy. Advanced Electromagnetics, Advanced Electromagnetics, 2016, 5 (3), pp.20. ⟨10.7716/aem.v5i3.380⟩. ⟨hal-02177964⟩
  • Joubert Eric, O. Latry, Jean-Philippe Roux. Temperature and Dilatation Estimation for Modern Semiconductor Devices. Sensors & Transducers Journal, International Frequency Sensor Association (IFSA), 2015, 184 (1), pp.130-135. ⟨hal-02178029⟩
  • Guillaume Ducournau, O. Latry, E. Joubert, M. Ketata. Comparison of different feedback signals used in one stage PMD compensators for different modulation formats. IEEE Transactions on Communications, Institute of Electrical and Electronics Engineers, 2008, 56, pp.1722-1728. ⟨10.1109/TCOMM.2008.060476⟩. ⟨hal-00356948⟩
  • E. Joubert, Xavier Courtois, Patrice Marecot, Christine Canaff, Daniel Duprez. The chemistry of DeNOx reactions over Pt/Al2O3: the oxime route to N2 or N2O.. Journal of Catalysis, Elsevier, 2006, 243 (2), pp.252-262. ⟨10.1016/j.jcat.2006.07.018⟩. ⟨hal-00289455⟩
  • M. Abdelaoui, M. Idrissi-Benzohra, E. Joubert, M. Benzohra, F. Olivié, et al.. Magnetic susceptibility of P+N junctions in correlation with the nature of silicon substrate: crystalline or pre-amorphised. Materials Science and Engineering: B, Elsevier, 2003, 102 (1-3), pp.370-375. ⟨10.1016/S0921-5107(02)00623-2⟩. ⟨hal-02138087⟩

Conference papers6 documents

  • O. Latry, Eric Joubert, Tristan Neveu, Niemat Moultif, Mohamed Ndiaye. Temperature estimation of high-electron mobility transistors AlGaN/GaN. 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.265-268, ⟨10.1109/MELCON.2018.8379105⟩. ⟨hal-02131183⟩
  • Niemat Moultif, Eric Joubert, Olivier Latry. SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations. 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.260-264, ⟨10.1109/MELCON.2018.8379104⟩. ⟨hal-02181679⟩
  • Niemat Moultif, Eric Joubert, Mohamed Lamine Masmoudi, O. Latry. Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures. 2017 Annual Reliability and Maintainability Symposium (RAMS), Jan 2017, Orlando, France. ⟨10.1109/ram.2017.7889732⟩. ⟨hal-01765953⟩
  • Wadia Jouha, Ahmed Eloualkaki, Pascal Dherbécourt, Joubert Eric, M. Masmoudi. An Extraction Method of SiC Power MOSFET Threshold Voltage. 3rd International Conference on Electrical and Information Technologies, Nov 2017, Rabat, Morocco. ⟨10.1007/978-3-030-05276-8_2⟩. ⟨hal-02295944⟩
  • Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Eric Joubert, Mohamed Lamine Masmoudi. A new extraction method of SiC power MOSFET threshold voltage using a physical approach. 2017 International Conference on Electrical and Information Technologies (ICEIT), Nov 2017, Rabat, France. pp.1-6, ⟨10.1109/EITech.2017.8255289⟩. ⟨hal-02177925⟩
  • Wadia Jouha, Pascal Dherbécourt, Eric Joubert, Ahmed El Oualkadi. Static behavior analysis of silicon carbide power MOSFET for temperature variations. 2016 International Conference on Electrical and Information Technologies (ICEIT), May 2016, Tangiers, Morocco. pp.276-280, ⟨10.1109/EITech.2016.7519605⟩. ⟨hal-02173722⟩

Poster communications1 document

  • Tien Anh Nguyen, Echeverri Andres, Mbarek Safa, Niemat Moultif, Pascal Dherbécourt, et al.. Analyse par électroluminescence des dégradations de transistor MOSFET en SiC. Symposium de Génie Electrique 2016 - SGE2016, Jun 2016, Grenoble, France. ⟨hal-01696225⟩

Book sections3 documents

  • Niemat Moultif, Alexis Divay, Eric Joubert, O. Latry. Reliability Study of High-Power Mechatronic Components by Spectral Photoemission Microscopy. Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.241--271, 2017, ⟨10.1016/b978-1-78548-261-8.50008-5⟩. ⟨hal-01927247⟩
  • Niemat Moultif, Mohamed Lamine Masmoudi, Eric Joubert, O. Latry. Reliability and Qualification Tests for High-Power MOSFET Transistors. Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.155--197, 2017, ⟨10.1016/b978-1-78548-261-8.50005-x⟩. ⟨hal-01927246⟩
  • Eric Joubert, Olivier Latry, Pascal Dherbécourt, Maxime Fontaine, Christian Gautier, et al.. Internal Temperature Measurement of Electronic Components. Abdelkhalak El Hami & Philippe Pougnet (Eds). Embedded Mechatronic Systems 1, Elsevier, pp.165-184, 2015, 978-1-78548-013-3. ⟨10.1016/B978-1-78548-013-3.50007-3⟩. ⟨hal-02173702⟩