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Study of Hydrogen plasma reduction of Nickel substrate during PEALD Ta2O5 deposition for ReRAM application.
R. Gassilloud
,
A. Marty
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A. Abbadie
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P. Rodriguez
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S. Favier
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et al.
ALD, 2015, PORTLAND, United States
Communication dans un congrès
hal-01877931v1
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Study of annealing-induced interdiffusion in In2O3/Ag/In2O3 structures by a combined X-ray reflectivity and grazing incidence X-ray fluorescence analysis
B. Caby
,
F. Brigidi
,
D. Ingerle
,
E. Nolot
,
G. Pepponi
,
et al.
Article dans une revue
hal-02184181v1
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Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges
Julien Borrel
,
Louis Hutin
,
Helen Grampeix
,
Emmanuel Nolot
,
Magali Tessaire
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et al.
IWJT 2016 - 16th International Workshop on Junction Technology, May 2016, Shanghai, China. pp.14-19
Communication dans un congrès
hal-03325000v1
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Elemental depth profiling in transparent conducting oxide thin film by X-ray reflectivity and grazing incidence X-ray fluorescence combined analysis
H. Rotella
,
B. Caby
,
Y. Ménesguen
,
Y. Mazel
,
A. Valla
,
et al.
Article dans une revue
cea-01849890v1
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Germanium, antimony, tellurium, their binary and ternary alloys and the impact of nitrogen: An X-ray photoelectron study
E. Nolot
,
C. Sabbione
,
W. Pessoa
,
L. Prazakova
,
G. Navarro
Article dans une revue
hal-03491364v1
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A novel 2-step ALD route to ultra-thin Mo$S_{2}$ films on Si$O_{2}$ through a surface organometallic intermediate
Stéphane Cadot
,
Olivier Renault
,
Mathieu Frégnaux
,
Denis Rouchon
,
Emmanuel Nolot
,
et al.
Article dans une revue
hal-01872867v1
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Improvement of Capacitive Behavior on Gradient-Free PZT Thin Films
Sylvain Pelloquin
,
Gwenael Le Rhun
,
Emmanuel Defaÿ
,
Philippe Renaux
,
Emmanuel Nolot
,
et al.
N°spécial de revue/special issue
hal-03265303v1
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Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts
Julien Borrel
,
L. Hutin
,
H. Grampeix
,
E. Nolot
,
E. Ghegin
,
et al.
Communication dans un congrès
hal-03325002v1
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Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping
L. Prazakova
,
E. Nolot
,
E. Martinez
,
F. Fillot
,
D. Rouchon
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et al.
Article dans une revue
cea-03707285v1
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X-ray reflectometry and grazing-incidence X-ray fluorescence characterization of innovative electrodes for tantalum-based resistive random access memories
E. Nolot
,
B. Caby
,
R. Gassilloud
,
M. Veillerot
,
D. Eichert
Article dans une revue
cea-02186190v1
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Quantitative depth-profile analysis of transition metal nitride materials with combined grazing-incidence X-ray fluorescence and X-ray reflectometry analysis
S. Torrengo
,
D. Eichert
,
Y. Mazel
,
M. Bernard
,
Yves Ménesguen
,
et al.
Article dans une revue
hal-03492233v1
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Grazing-incidence X-ray fluorescence analysis of thin chalcogenide materials deposited on Bragg mirrors
E. Nolot
,
W. Pessoa
,
S. Torrengo
,
Y. Mazel
,
M. Bernard
,
et al.
Article dans une revue
hal-03490712v1
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Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices
H. Rotella
,
Y. Mazel
,
S. Brochen
,
A. Valla
,
A. Pautrat
,
et al.
Article dans une revue
hal-02175384v1
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Multilayer OTS selectors engineering for high temperature stability, scalability and high endurance
C. Laguna
,
M. Bernard
,
N. Bernier
,
D. Rouchon
,
N. Rochat
,
et al.
Communication dans un congrès
cea-03331470v1
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Versailles Project on Advanced Materials and Standards interlaboratory study on intensity calibration for x-ray photoelectron spectroscopy instruments using low-density polyethylene
Benjamen Reed
,
David Cant
,
Steve Spencer
,
Abraham Jorge Carmona-Carmona
,
Adam Bushell
,
et al.
Article dans une revue
hal-03105700v1
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Etude des dispositifs de protection entre les effets des decharges electriques au sein d'un generateur de tres haute tension: l'accelerateur VIVITRON
E. Nolot
Instrumentation and Detectors [physics.ins-det]. Université Joseph-Fourier - Grenoble I, 1996. English. ⟨NNT : ⟩
Thèse
in2p3-00019067v1
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Study of annealing-induced interdiffusion in In$_2$O$_3$/Ag/In$_2$O$_3$ structures by a combined X-ray reflectivity and grazing incidence X-ray fluorescence analysis
Béranger Caby
,
Fabio Brigidi
,
D. Ingerle
,
Emmanuel Nolot
,
Giancarlo Pepponi
,
et al.
Article dans une revue
cea-02957349v1
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Phase-Change Memory: Performance, Roles and Challenges
G. Navarro
,
G. Bourgeois
,
J. Kluge
,
A. L. Serra
,
A. Verdy
,
et al.
2018 IEEE International Memory Workshop (IMW), May 2018, Kyoto, Japan
Communication dans un congrès
cea-02185419v1
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Innovative Multilayer OTS Selectors for Performance Tuning and Improved Reliability
C. Laguna
,
N. Castellani
,
M. Bernard
,
N. Rochat
,
D. Rouchon
,
et al.
Communication dans un congrès
cea-02930899v1
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CASTOR, a new instrument for combined XRR-GIXRF analysis at SOLEIL
Yves Ménesguen
,
Bruno Boyer
,
H. Rotella
,
J. Lubeck
,
J. Weser
,
et al.
Article dans une revue
cea-01801603v1
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Carbon ion implantation as healing strategy for improved reliability in phase-change memory arrays
G. Bourgeois
,
V. Meli
,
F. Al Mamun
,
F. Mazen
,
E. Nolot
,
et al.
Article dans une revue
cea-03373794v1
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Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature
Oumaima Daoudi
,
Emmanuel Nolot
,
Mélanie Dartois
,
Magali Tessaire
,
François Aussenac
,
et al.
Article dans une revue
hal-04493833v1
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Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications
G. Lama
,
G. Bourgeois
,
M. Bernard
,
N. Castellani
,
J. Sandrini
,
et al.
Article dans une revue
cea-03086418v1
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Elemental depth profiling in transparent conducting oxide thin film by X-ray reflectivity and grazing incidence X-ray fluorescence combined analysis
H. Rotella
,
B. Caby
,
Y. Ménesguen
,
Y. Mazel
,
A. Valla
,
et al.
Article dans une revue
cea-02957331v1
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Multilevel programming reliability in Si-doped GeSbTe for Storage Class Memory
G. Lama
,
M. Bernard
,
N. Bernier
,
G. Bourgeois
,
E. Nolot
,
et al.
Communication dans un congrès
cea-03331482v1
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Oxygen scavenging in TiN/Ta2O5 stack by thin PVD-flashed Al layers for RRAM application.
A. Marty
,
R. Gassilloud
,
M. C. Bernard
,
E. Nolot
,
S. Favier
,
et al.
ECASIA, 2015, Granada, Spain
Communication dans un congrès
hal-01877920v1
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Analysis of InGaN surfaces after chemical treatments and atomic layer deposition of Al2O3 for uLED applications
Corentin Le Maoult
,
David Vaufrey
,
François Martin
,
Eugénie Martinez
,
Emmanuel Nolot
,
et al.
Proceedings of SPIE, the International Society for Optical Engineering, 2020, 11280, pp.112801C. ⟨10.1117/12.2544787⟩
Article dans une revue
cea-02941396v2
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Use of ARXPS for studying the oxidation kinetic of tantalum carbide (TaC) 200mm wafers
B. Pelissier
,
A. Beaurain
,
C. Dubarry
,
E. Nolot
,
O. Joubert
Présentation ECASIA, 2007, Bruxelles, Belgium
Communication dans un congrès
hal-00390582v1
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Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance
A. Verdy
,
G. Navarro
,
M. C. Bernard
,
S. Chevalliez
,
N. Castellani
,
et al.
2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingame, United States. pp.6D.4-1-6D.4-6
Communication dans un congrès
cea-02187673v1
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Low-temperature and scalable CVD route to WS2 monolayers on SiO2/Si substrates
Stéphane Cadot
,
Olivier Renault
,
Denis Rouchon
,
Denis Mariolle
,
Emmanuel Nolot
,
et al.
Article dans une revue
hal-01872852v1
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