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203

Curriculum vitae of Emmanuel Dubois


Emmanuel Dubois received the Ingénieur degree from the Institut Supérieur d’Electronique et du Numérique (ISEN), Lille, France, in 1985 and the Ph. D. degree from the University of Lille in 1990. In 1992, he was a visiting scientist at the IBM T.J. Watson Research Centre, Yorktown Heights, working on characterization and simulation of submicron SOI-MOSFETs. In 1993, he joined the Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN UMR 8520) where he is currently Director of Research at the Centre National de la Recherche Scientifique, CNRS. He was coordinator or task leader of a series of European projects focused on ultimate non-conventional MOSFETs (FP4-IST-QUEST, FP5-IST-SODAMOS, FP6-IST-METAMOS, FP6 SiNANO NoE, FP7 NANOSIL NoE, FP6 NANOCMOS IP, FP6 PULLNANO IP). He currently heads the STMicroelectronics-IEMN Common Laboratory. From 2005 to 2016, he was on the Technical Program Committee of ESSDERC and was TPC member of the VSLI Symposium on Technology (2018-2019-2020). Until 2017, he participated to the nanoelectronics committee of the French Observatory on Micro and NanoTechnologies (OMNT). He is currently involved in functional packaging (System-Moore) and coordinator of the PIA-EQUIPEX project LEAF on advanced laser-based microfabrication. His research interests cover advanced source/drain CMOS technology, non-conventional thermal energy harvesting, laser micromachining and functional packaging for RF, mmW and photonics.


Journal articles84 documents

  • Arun Bhaskar, Justine Philippe, Flavie Braud, Etienne Okada, Vanessa Avramovic, et al.. Large-area femtosecond laser milling of silicon employing trench analysis. Optics and Laser Technology, Elsevier, 2021, 138, pp.106866. ⟨10.1016/j.optlastec.2020.106866⟩. ⟨hal-03091197⟩
  • Arun Bhaskar, Justine Philippe, Vanessa Avramovic, Flavie Braud, Jean-François Robillard, et al.. Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA. IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2020, 8, pp.959-969. ⟨10.1109/JEDS.2020.3019884⟩. ⟨hal-03091190⟩
  • Justine Philippe, Arun Bhaskar, Etienne Okada, Flavie Braud, Jean-Francois Robillard, et al.. Thermal analysis of ultimately-thinned-and-transfer-bonded CMOS on mechanically flexible foils. IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2019, 7, pp.973-978. ⟨10.1109/JEDS.2019.2939884⟩. ⟨hal-02317229⟩
  • Romain Peretti, Flavie Braud, Emilien Peytavit, Emmanuel Dubois, Jean-François Lampin. Broadband terahertz light-matter interaction enhancement for precise spectroscopy of thin films and micro-samples. Photonics, MDPI, 2018, 5 (2), pp.11. ⟨10.3390/photonics5020011⟩. ⟨hal-02317238⟩
  • Jean-Marc Boucaud, Folly-Eli Ayi-Yovo, Quentin Hivin, Matthieu Berthomé, Cédric Durand, et al.. Cost effective laser structuration of optical waveguides on thin glass interposer. Journal of Lightwave Technology, Institute of Electrical and Electronics Engineers (IEEE)/Optical Society of America(OSA), 2017, 35 (20), pp.4445-4450. ⟨10.1109/JLT.2017.2732461⟩. ⟨hal-01961118⟩
  • Julien Borrel, Louis Hutin, Donato Kava, Rémy Gassilloud, Nicolas Bernier, et al.. Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2017, 56 (4), 04CB02, 7 p. ⟨10.7567/JJAP.56.04CB02⟩. ⟨hal-03325004⟩
  • Maciej Haras, Valeria Lacatena, Thierno Moussa Bah, Stanislav Didenko, Jean-François Robillard, et al.. Fabrication of thin-film silicon membranes with phononic crystals for thermal conductivity measurements. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2016, 37 (10), pp.1358-1361. ⟨10.1109/LED.2016.2600590⟩. ⟨hal-03276234⟩
  • V. Giorgis, F. Morini, T. Zhu, Jean-François Robillard, X. Wallart, et al.. Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters. Journal of Applied Physics, American Institute of Physics, 2016, 120 (20), 205108, 6 p. ⟨10.1063/1.4968532⟩. ⟨hal-03276235⟩
  • Nicolas Reckinger, Xiaohui Tang, Frederic Joucken, Luc Lajaunie, Raul Arenal, et al.. Oxidation-assisted graphene heteroepitaxy on copper foil. Nanoscale, Royal Society of Chemistry, 2016, 8 (44), pp.18751-18759. ⟨10.1039/c6nr02936a⟩. ⟨hal-03325005⟩
  • Julien Borrel, Louis Hutin, Olivier Rozeau, Marie-Anne Jaud, Sebastien Martinie, et al.. Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part II. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2016, 63 (9), pp.3419-3423. ⟨10.1109/TED.2016.2590826⟩. ⟨hal-03325006⟩
  • Julien Borrel, Louis Hutin, Olivier Rozeau, Marie-Anne Jaud, Sebastien Martinie, et al.. Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part I. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2016, 63 (9), pp.3413-3418. ⟨10.1109/TED.2016.2590836⟩. ⟨hal-03325007⟩
  • K. Smaali, D. Guerin, V. Passi, L. Ordronneau, A. Carella, et al.. Physical study by surface characterizations of sarin sensor on the basis of chemically functionalized silicon nanoribbon field effect transistor. Journal of Physical Chemistry C, American Chemical Society, 2016, 120 (20), pp.11180-11191. ⟨10.1021/acs.jpcc.6b00336⟩. ⟨hal-03325001⟩
  • V. Lacatena, M. Haras, Jean-François Robillard, S. Monfray, T. Skotnicki, et al.. Toward quantitative modeling of silicon phononic thermocrystals. Applied Physics Letters, American Institute of Physics, 2015, 106 (11), 114104, 4 p. ⟨10.1063/1.4915619⟩. ⟨hal-03324999⟩
  • Maciej Haras, Valeria Lacatena, François Morini, Jean-François Robillard, Stephane Monfray, et al.. Thermoelectric energy conversion: How good can silicon be?. Materials Letters, Elsevier, 2015, 157, pp.193-196. ⟨10.1016/j.matlet.2015.05.012⟩. ⟨hal-03325003⟩
  • François Morini, Emmanuel Dubois, Jean-François Robillard, Stéphane Monfray, Thomas Skotnicki. Low work function thin film growth for high efficiency thermionic energy converter : coupled Kelvin probe and photoemission study of potassium oxide. physica status solidi (a), Wiley, 2014, 211, pp.1334-1337. ⟨10.1002/pssa.201300136⟩. ⟨hal-01005619⟩
  • V. Passi, E. Dubois, Aurélie Lecestre, A. Sanchez-Linde, B. Du Bois, et al.. Design guidelines for releasing silicon nanowire arrays by liquid and vapor phase hydrofluoric acid. Microelectronic Engineering, Elsevier, 2013, 103, pp.57-65. ⟨10.1016/j.mee.2012.09.002⟩. ⟨hal-00795975⟩
  • A. Lecavelier Des Etangs-Levallois, Z. K. Chen, M. Lesecq, S. Lepilliet, Y. Tagro, et al.. A converging route towards very high frequency, mechanically flexible, and performance stable integrated electronics. Journal of Applied Physics, American Institute of Physics, 2013, 113, pp.153701-1-9. ⟨10.1063/1.4801803⟩. ⟨hal-00819466⟩
  • A. Lecavelier Des Etangs-Levallois, M. Lesecq, F. Danneville, Y. Tagro, S. Lepilliet, et al.. Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics. Solid-State Electronics, Elsevier, 2013, 90, pp.73-78. ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00914203⟩
  • X.-L. Han, Guilhem Larrieu, E. Dubois, Fuccio Cristiano. Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts. Surface Science, Elsevier, 2012, 606 (9-10), pp.836 - 839. ⟨10.1016/j.susc.2012.01.021⟩. ⟨hal-01921880⟩
  • N. Reckinger, C.A. Dutu, Xing Tang, E. Dubois, D.A. Yarekha, et al.. Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer. Thin Solid Films, Elsevier, 2012, 520, pp.4501-4505. ⟨10.1016/j.tsf.2012.02.076⟩. ⟨hal-00787381⟩
  • X.L. Han, G. Larrieu, E. Dubois, Fuccio Cristiano. Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts. Surface Science, Elsevier, 2012, 606, pp.836-839. ⟨10.1016/j.susc.2012.01.021⟩. ⟨hal-00787379⟩
  • Z.K. Chen, E. Dubois, F. Ravaux, F. Danneville. Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology. Microelectronic Engineering, Elsevier, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩
  • F. Ravaux, E. Dubois, Z.K. Chen. Schottky barrier height reduction using strained silicon-on-insulator and dopant segregation. Microelectronic Engineering, Elsevier, 2012, 98, pp.391-394. ⟨10.1016/j.mee.2012.05.045⟩. ⟨hal-00790413⟩
  • N. Clement, G. Larrieu, E. Dubois. Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59, pp.180-187. ⟨10.1109/TED.2011.2169676⟩. ⟨hal-00787365⟩
  • A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, N. Breil, et al.. TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors. Central European Journal of Physics, Springer Verlag, 2011, 9, pp.423-427. ⟨10.2478/s11534-010-0135-4⟩. ⟨hal-00574499⟩
  • N. Reckinger, Xing Tang, E. Dubois, G. Larrieu, D. Flandre, et al.. Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width. Applied Physics Letters, American Institute of Physics, 2011, 98, pp.112102-1-3. ⟨10.1063/1.3567546⟩. ⟨hal-00579075⟩
  • N. Reckinger, C. Poleunis, E. Dubois, C.A. Dutu, X.H. Tang, et al.. Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation. Applied Physics Letters, American Institute of Physics, 2011, 99, pp.012110-1-3. ⟨10.1063/1.3608159⟩. ⟨hal-00639859⟩
  • A. Lecavelier Des Etangs-Levallois, E. Dubois, M. Lesecq, F. Danneville, L. Poulain, et al.. 150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2011, 32, pp.1510-1512. ⟨10.1109/LED.2011.2166241⟩. ⟨hal-00639864⟩
  • V. Passi, F. Ravaux, E. Dubois, S. Clavaguera, A. Carella, et al.. High gain and fast detection of warfare agents using back-gated silicon-nanowired MOSFETs. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2011, 32, pp.976-978. ⟨10.1109/LED.2011.2146750⟩. ⟨hal-00639858⟩
  • N. Reckinger, Xing Tang, S. Godey, E. Dubois, A. Laszcz, et al.. Erbium silicide growth in the presence of residual oxygen. Journal of The Electrochemical Society, Electrochemical Society, 2011, 158, pp.H715-H723. ⟨10.1149/1.3585777⟩. ⟨hal-00597075⟩
  • G. Larrieu, E. Dubois. CMOS inverter based on Schottky source-drain MOS technology with low-temperature dopant segregation. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2011, 32, pp.728-730. ⟨10.1109/LED.2011.2131111⟩. ⟨hal-00603004⟩
  • X.L. Han, G. Larrieu, Pier-Francesco Fazzini, E. Dubois. Realization of ultra dense arrays of vertical silicon NWs with defect free surface and perfect anisotropy using a top-down approach. Microelectronic Engineering, Elsevier, 2011, 88, pp.2622-2624. ⟨10.1016/j.mee.2010.12.102⟩. ⟨hal-00795901⟩
  • G. Larrieu, E. Dubois, D. Ducatteau. CMOS integration using low thermal budget dopant-segregated metallic S/D junctions on thin-body SOI. ECS Transactions, Electrochemical Society, Inc., 2011, 41, pp.275-282. ⟨10.1149/1.3633307⟩. ⟨hal-00795902⟩
  • V. Passi, E. Dubois, C. Celle, S. Clavaguera, J.P. Simonato, et al.. Functionalization of silicon nanowires for specific sensing. ECS Transactions, Electrochemical Society, Inc., 2011, 35, pp.313-318. ⟨10.1149/1.3570811⟩. ⟨hal-00591351⟩
  • J.P. Simonato, S. Clavaguera, A. Carella, M. Delalande, N. Raoul, et al.. New chemically functionalized nanomaterials for electrical nerve agents sensors. Journal of Physics: Conference Series, IOP Publishing, 2011, 307, pp.012008-1-5. ⟨10.1088/1742-6596/307/1/012008⟩. ⟨hal-00795903⟩
  • X.L. Han, G. Larrieu, E. Dubois. Realization of vertical silicon nanowire networks with an ultra high density using a top-down approach. Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2010, 10, pp.7423-7427. ⟨10.1166/jnn.2010.2841⟩. ⟨hal-00549625⟩
  • Aurélie Lecestre, E. Dubois, A. Villaret, T. Skotnicki, P. Coronel, et al.. Confined VLS growth and structural characterization of silicon nanoribbons. Microelectronic Engineering, Elsevier, 2010, 87, pp.1522-1526. ⟨10.1016/j.mee.2009.11.053⟩. ⟨hal-00549560⟩
  • J. Ratajczak, A. Laszcz, A. Czerwinski, J. Katcki, F. Phillipp, et al.. Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications. Journal of Microscopy, Wiley, 2010, 237, pp.379-383. ⟨10.1111/j.1365-2818.2009.03264.x⟩. ⟨hal-00549623⟩
  • A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, V. Srot, et al.. Characterization of ytterbium silicide formed in ultra high vacuum. Journal of Physics: Conference Series, IOP Publishing, 2010, 209, pp.012056-1-4. ⟨10.1088/1742-6596/209/1/012056⟩. ⟨hal-00549559⟩
  • V. Passi, Aurélie Lecestre, Christophe Krzeminski, G. Larrieu, E. Dubois, et al.. A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum. Microelectronic Engineering, Elsevier, 2010, 87, pp.1872-1878. ⟨10.1016/j.mee.2009.11.022⟩. ⟨hal-00548985⟩
  • D.A. Yarekha, G. Larrieu, N. Breil, E. Dubois, S. Godey, et al.. UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET. ECS Transactions, Electrochemical Society, Inc., 2009, 19, pp.339-344. ⟨10.1149/1.3118961⟩. ⟨hal-00471999⟩
  • R. Valentin, E. Dubois, G. Larrieu, J.P. Raskin, G. Dambrine, et al.. Optimization of RF performance of metallic source/drain SOI MOSFETs using dopant segregation at the Schottky interface. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30, pp.1197-1199. ⟨10.1109/LED.2009.2031254⟩. ⟨hal-00471810⟩
  • X.H. Tang, V. Bayot, N. Reckinger, D. Flandre, J.P. Raskin, et al.. A simple method for measuring Si-Fin sidewall roughness by AFM. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2009, 8, pp.611-616. ⟨10.1109/TNANO.2009.2021064⟩. ⟨hal-00471972⟩
  • J. Ratajczak, A. Laszcz, A. Czerwinski, J. Katcki, Xing Tang, et al.. TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs. Acta Physica Polonica A, Polish Academy of Sciences. Institute of Physics, 2009, 116, pp.89-91. ⟨hal-00472000⟩
  • G. Larrieu, D.A. Yarekha, E. Dubois, N. Breil, O. Fainot. Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30, pp.1266-1268. ⟨10.1109/LED.2009.2033085⟩. ⟨hal-00471974⟩
  • N. Reckinger, X.H. Tang, V. Bayot, D.A. Yarekha, E. Dubois, et al.. Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing. Applied Physics Letters, American Institute of Physics, 2009, 94, pp.191913-1-3. ⟨10.1063/1.3136849⟩. ⟨hal-00471985⟩
  • Aurélie Lecestre, E. Dubois, A. Villaret, P. Coronel, T. Skotnicki, et al.. Confined and guided catalytic growth of crystalline silicon films on a dielectric substrate. IOP Conference Series: Materials Science and Engineering, IOP Publishing, 2009, 6, pp.012022-1-6. ⟨10.1088/1757-899X/6/1/012022⟩. ⟨hal-00471991⟩
  • G. Larrieu, D.A. Yarekha, E. Dubois, D. Deresmes, N. Breil, et al.. Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. ECS Transactions, Electrochemical Society, Inc., 2009, 19, pp.201-207. ⟨10.1149/1.3117410⟩. ⟨hal-00471998⟩
  • E. Pascual, M.J. Martin, R. Rengel, G. Larrieu, E. Dubois. Enhanced carrier injection in Schottky contacts using dopant segregation : a Monte Carlo research. Semiconductor Science and Technology, IOP Publishing, 2009, 24, pp.025022-1-6. ⟨10.1088/0268-1242/24/2/025022⟩. ⟨hal-00471970⟩
  • Xing Tang, N. Reckinger, V. Bayot, D. Flandre, E. Dubois, et al.. An electrical evaluation method for the silicidation of silicon nanowires. Applied Physics Letters, American Institute of Physics, 2009, 95, pp.023106-1-3. ⟨10.1063/1.3171929⟩. ⟨hal-00471971⟩
  • Christophe Krzeminski, Xing Tang, N. Reckinger, V. Bayot, E. Dubois. Process optimization and downscaling of a single electron single dot memory. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2009, 8, pp.737-748. ⟨10.1109/TNANO.2009.2021653⟩. ⟨hal-00471989⟩
  • R. Valentin, E. Dubois, J.P. Raskin, G. Larrieu, G. Dambrine, et al.. RF small signal analysis of Schottky-barrier p-MOSFETs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2008, 55, pp.1192-1202. ⟨10.1109/TED.2008.919382⟩. ⟨hal-00356664⟩
  • N. Breil, E. Dubois, A. Halimaoui, A. Pouydebasque, G. Larrieu, et al.. Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩
  • E. Pascual, R. Rengel, N. Reckinger, Xing Tang, V. Bayot, et al.. A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes : influence of direct quantum tunnelling and temperature. physica status solidi (c), Wiley, 2008, 5, pp.119-122. ⟨10.1002/pssc.200776519⟩. ⟨hal-00356974⟩
  • N. Reckinger, Xing Tang, V. Bayot, D.A. Yarekha, E. Dubois, et al.. Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap. Journal of Applied Physics, American Institute of Physics, 2008, 104, pp.103523-1-9. ⟨10.1063/1.3010305⟩. ⟨hal-00356975⟩
  • G. Larrieu, E. Dubois, D. Yarekha, N. Breil, N. Reckinger, et al.. Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance. Materials Science and Engineering: B, Elsevier, 2008, 154-155, pp.159-162. ⟨10.1016/j.mseb.2008.10.014⟩. ⟨hal-00356976⟩
  • A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, V. Srot, et al.. Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/SiO2/Si structure. Materials Science and Engineering: B, Elsevier, 2008, 154-155, pp.175-178. ⟨10.1016/j.mseb.2008.10.002⟩. ⟨hal-00356977⟩
  • Xing Tang, N. Reckinger, G. Larrieu, E. Dubois, D. Flandre, et al.. Characterization of ultrathin SOI film and application to short channel MOSFETs. Nanotechnology, Institute of Physics, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩
  • G. Larrieu, E. Dubois, X. Wallart, J. Katcki. Kinetics, stoichiometry, morphology and current drive capabilities of Ir-based silicides. Journal of Applied Physics, American Institute of Physics, 2007, 102, pp.094504-1-7. ⟨10.1063/1.2802564⟩. ⟨hal-00255850⟩
  • F. Cornu-Fruleux, J. Penaud, E. Dubois, P. Coronel, G. Larrieu, et al.. Spacer-first damascene-gate FinFET architecture featuring stringer-free integration. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2007, 28, pp.523-526. ⟨10.1109/LED.2007.897443⟩. ⟨hal-00255851⟩
  • N. Breil, A. Halimaoui, T. Skotnicki, E. Dubois, G. Larrieu, et al.. Selective etching of Pt with respect to PtSi using a sacrificial low temperature germanidation process. Applied Physics Letters, American Institute of Physics, 2007, 91, pp.232112-1-3. ⟨10.1063/1.2821143⟩. ⟨hal-00255853⟩
  • Christophe Krzeminski, G. Larrieu, J. Penaud, E. Lampin, E. Dubois. Silicon dry oxidation kinetics at low temperature in the nanometric range: modeling and experiment. Journal of Applied Physics, American Institute of Physics, 2007, 101, pp.064908-1-8. ⟨10.1063/1.2711764⟩. ⟨hal-00255848⟩
  • A. Laszcz, A. Czerwinski, J. Ratajczak, J. Katcki, N. Breil, et al.. TEM study of iridium silicide contact layers for low Schottky barrier MOSFETs. Archives of Metallurgy and Materials, Versita, 2006, 51, pp.551-554. ⟨hal-00152968⟩
  • A. Łaszcz, J. Katcki, J. Ratajczak, Xing Tang, E. Dubois. TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate. Journal of Microscopy, Wiley, 2006, 224, pp.38-41. ⟨hal-00138660⟩
  • A. Laszcz, J. Katcki, J. Ratajczak, A. Czerwinski, N. Breil, et al.. TEM study of PtSi contacts layers for low Schottky barrier MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253, pp.274-277. ⟨hal-00138656⟩
  • J. Penaud, F. Fruleux, E. Dubois. Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs. Applied Surface Science, Elsevier, 2006, 253, pp.395-399. ⟨hal-00138654⟩
  • F. Fruleux, J. Penaud, E. Dubois, M. Francois, M. Muller. An optimal high contrast e-beam lithography process for the patterning of dense fin networks. Materials Science and Engineering: C, Elsevier, 2006, 26, pp.893-897. ⟨hal-00138653⟩
  • F. Fruleux, J. Penaud, E. Dubois, M. Francois, M. Muller. Optimisation of HSQ e-beam lithography for the patterning of FinFET transistors. Microelectronic Engineering, Elsevier, 2006, 83, pp.776-779. ⟨hal-00138652⟩
  • Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, E. Dubois, et al.. Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2006, 5, pp.649-656. ⟨hal-00138655⟩
  • G. Larrieu, E. Dubois. Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2005, 52, pp.2720-2726. ⟨hal-00138397⟩
  • G. Larrieu, E. Dubois. Reactive ion etching of a 20 nanometers tungsten gate using a SF6/N2 chemistry and hydrogen silsesquioxane hard mask resist. Journal of Vacuum Science and Technology B, 2005, 23, pp.2046-2050. ⟨hal-00125635⟩
  • H. Xu, E. Lampin, E. Dubois, S. Bardy, F. Murray. Impact of large angle tilt implantation on the threshold voltages of LDMOS transistors on SOI. Materials Science and Engineering: B, Elsevier, 2005, 124-125, pp.323-326. ⟨hal-00138396⟩
  • A. Laszcz, J. Katcki, J. Ratajczak, G. Larrieu, E. Dubois, et al.. Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain. Journal of Alloys and Compounds, Elsevier, 2004, 382, pp.24-28. ⟨hal-00140977⟩
  • E. Dubois, G. Larrieu. Measurement of low Schottky barrier heights applied to metallic source/drain MOSFETs. Journal of Applied Physics, American Institute of Physics, 2004, 96, pp.729-737. ⟨hal-00140973⟩
  • G. Larrieu, E. Dubois. Ideal subthreshold characteristics of thin-film SOI p-MOSFETs with Schottky source/drain and a midgap tungsten gate. IEE Proceedings Microwaves Antennas and Propagation, Institution of Engineering and Technology, 2004, 25, pp.801-803. ⟨hal-00140978⟩
  • G. Larrieu, E. Dubois. Schottky-barrier source/drain MOSFETs on ultra-thin silicon-on-insulator body with a tungsten metallic midgap gate. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2004, 25, pp.801-803. ⟨hal-00140981⟩
  • E. Lampin, E. Dubois, H. Xu, S. Bardy, F. Murray. Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2003, 50, pp.1401-1404. ⟨hal-00146392⟩
  • G. Larrieu, E. Dubois, X. Wallart, X. Baie, J. Katcki. Formation of Pt-based silicide contacts : kinetics, stochiometry and current drive capabilities. Journal of Applied Physics, American Institute of Physics, 2003, 94, pp.7801-7810. ⟨hal-00146394⟩
  • Xing Tang, J. Katcki, E. Dubois, N. Reckinger, J. Ratajczak, et al.. Very low Schottky barrier to n-type silicon with PtEr-stack silicide. Solid-State Electronics, Elsevier, 2003, 47, pp.2105-2111. ⟨hal-00146401⟩
  • E. Dubois, G. Larrieu. Low Schottky barrier source/drain for advanced MOS architecture : device design and material consideration. Solid-State Electronics, Elsevier, 2002, 46, pp.997-1004. ⟨hal-00148735⟩
  • E. Dubois, E. Robilliart. Non-quasi-static transient model of fully-depleted SOI MOSFET and its application to the analysis of charge sharing in an analog switch. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2002, 23, pp.43-45. ⟨hal-00148743⟩
  • E. Dubois. From nanoelectronics to nanotechnology. Belgian Journal of Electronics & Communications HF, 2002, 3, pp.9-16. ⟨hal-00250387⟩
  • E. Dubois, J.L. Bubendorff. Kinetics of oxydation by scanning probe microscopy : a space-charge-limited model. Journal of Applied Physics, American Institute of Physics, 2000, 87, pp.8148-8154. ⟨hal-00158510⟩
  • E. Dubois, J.-L. Coppee, B. Baccus, D. Collard. ELECTRICAL PERFORMANCES COMPARISON OF SEMI AND FULLY RECESSED ISOLATION STRUCTURES. Journal de Physique Colloques, 1988, 49 (C4), pp.C4-813-C4-816. ⟨10.1051/jphyscol:19884171⟩. ⟨jpa-00227913⟩

Conference papers110 documents

  • Stephane Monfray, Sébastien Cremer, Nathalie Vulliet, Emmanuel Dubois, Florian Domengie, et al.. Optimization of deep rib high speed phase modulators on 300mm industrial Si-photonics platform. SPIE Photonics Europe, Conference 11364 - Applications of Photonic Technology - Integrated Photonics Platforms: Fundamental Research, Manufacturing and Applications, Apr 2020, Strasbourg, France. 1136403, 8 p., ⟨10.1117/12.2554725⟩. ⟨hal-03092725⟩
  • Victor Fiorese, Cybelle Belem-Gonçalves, C del Rio Boccio, D. Titz, Frederic Gianessello, et al.. Evaluation of micro laser sintering metal 3D-printing technology for the development of waveguide passive devices up to 325 GHz. IEEE/MTT-S International Microwave Symposium, IMS 2020, Aug 2020, Los Angeles, United States. pp.1168-1171, ⟨10.1109/IMS30576.2020.9224102⟩. ⟨hal-03091222⟩
  • Sergey Mitryukovskiy, Mélanie Lavancier, Flavie Braud, Théo Hannotte, Emmanuel Dubois, et al.. Device for broadband THz spectroscopy of 1-nL-volume samples. IRMMW-THz 2019, Sep 2019, Paris, France. paper Tu-PM2-3-6, 2 p., ⟨10.1109/IRMMW-THz.2019.8874026⟩. ⟨hal-02886495⟩
  • Sergey Mitryukovskiy, Mélanie Lavancier, Flavie Braud, Yue Bai, Emmanuel Dubois, et al.. Towards broadband THz spectroscopy and analysis of sub-wavelength-size biological samples. IRMMW-THz 2019, Sep 2019, Paris, France. ⟨10.1109/IRMMW-THz.2019.8874409⟩. ⟨hal-02886507⟩
  • Sergey Mitryukovskiy, Mélanie Lavancier, Flavie Braud, Goedele Roos, Théo Hannotte, et al.. Shining the light to terahertz spectroscopy of nL-volume biological samples. CLEO (The Conference on Lasers and Electro-Optics Conference) 2019, May 2019, San Jose, United States. paper ATu3K.6, 2 p., ⟨10.1364/CLEO_AT.2019.ATu3K.6⟩. ⟨hal-02158865⟩
  • Arun Bhaskar, Justine Philippe, Flavie Braud, Etienne Okada, Jean-Francois Robillard, et al.. Femtosecond laser micromachining of crystalline silicon for ablation of deep macro-sized cavities for silicon-on-insulator applications. SPIE Photonics West, Conference 10906 - Laser-based Micro- and Nanoprocessing XIII, Feb 2019, San Francisco, United States. 109060K, 13 p., ⟨10.1117/12.2507652⟩. ⟨hal-02317233⟩
  • A.M. Massoud, Bluet J.M., Regis Orobtchouk, Valeria Lacatena, Maciej Haras, et al.. Phonon heat conduction in phononic crystal membranes. E-MRS Spring Meeting, Symposium "Nanostructures for phononic applications", Jun 2018, Strasbourg, France. ⟨hal-01932523⟩
  • Q. Hivin, J-M. Boucaud, Flavie Braud, C. Durand, F. Gianesello, et al.. Femtosecond pulsed laser for advanced photonic packaging. 7th Electronic System-Integration Technology Conference, ESTC 2018, Sep 2018, Dresden, Germany. ⟨10.1109/ESTC.2018.8546374⟩. ⟨hal-01961743⟩
  • Romain Peretti, Sergey Mitryukovskiy, Flavie Braud, Emilien Peytavit, Emmanuel Dubois, et al.. Device for light-matter interaction enhancement in the full THz range for precise spectroscopy of small volume samples. 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018), Sep 2018, Nagoya, Japan. paper Tu-POS-05, 1-2, ⟨10.1109/IRMMW-THz.2018.8510508⟩. ⟨hal-02317320⟩
  • J.M. Boucaud, Q. Hivin, C. Durand, F. Gianesello, Davide Bucci, et al.. Single mode polymer optical waveguides and out-of-plane coupling structure on a glass substrate. 7th Electronic System-Integration Technology Conference, ESTC 2018, Sep 2018, Dresden, Germany. ⟨10.1109/ESTC.2018.8546461⟩. ⟨hal-01961666⟩
  • Thierno-Moussa Bah, Stanjen Didenko, Stéphane Monfray, Thomas Skotnicki, Emmanuel Dubois, et al.. Performance evaluation of silicon based thermoelectric generators interest of coupling low thermal conductivity thin films and a planar architecture. 48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, Germany. pp.226-229, ⟨10.1109/ESSDERC.2018.8486919⟩. ⟨hal-02317293⟩
  • Arun Bhaskar, Justine Philippe, Matthieu Berthomé, Etienne Okada, Jean-Francois Robillard, et al.. Large-area femtosecond laser ablation of Silicon to create membrane with high performance CMOS-SOI RF functions. 2018 7th Electronic System-Integration Technology Conference (ESTC), Sep 2018, Dresden, Germany. pp.801-806, ⟨10.1109/ESTC.2018.8546407⟩. ⟨hal-02317259⟩
  • A.M. Massoud, Bluet J.M., Regis Orobtchouk, Valeria Lacatena, Maciej Haras, et al.. Phonon heat conduction in phononic crystal membranes. 18th IEEE International Conference on Nanotechnology, IEEE Nano 2018, Session on “nanophononics”, Jul 2018, Cork, Ireland. ⟨hal-01932516⟩
  • Jean-Francois Robillard, Tierno M'Bah, Stanislav Didenko, T. Zhu, D. Zhou, et al.. Demonstration of low-thermal conductivity silicon nano-patterned membranes as a thermoelectric material. Eurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland. ⟨hal-02025459⟩
  • Stanislav Didenko, Tierno M'Bah, Antonin Massoud, Valeria Lacatena, Maciej Haras, et al.. Artificially-induced anisotropic heat flow in 2D patterned membranes. Eurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland. ⟨hal-02025449⟩
  • Stanislav Didenko, Antonin Massoud, Tierno M'Bah, Jean-Francois Robillard, Pierre-Olivier Chapuis, et al.. Thermal conductivity in Si 2D phononic membranes studied by Raman Thermometry,. GDRe Workshop on Thermal Nanosciences and NanoEngineering, Nov 2017, Lille, France. ⟨hal-02030916⟩
  • S. Didenko, V. Lacatena, M. Haras, J.F. Robillard, P.O. Chapuis, et al.. Thermal conductivity of Si 2D phononic membranes studied by MD simulations and Raman thermometry. Eurotherm 108: Nanoscale and Microscale Heat Transfer V, Sep 2016, Santorini, Greece. ⟨hal-01475281⟩
  • Emmanuel Dubois, J. Philippe, M. Berthome, J.F. Robillard, Christophe Gaquière, et al.. Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding. 6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. ⟨10.1109/ESTC.2016.7764513⟩. ⟨hal-03272693⟩
  • P.-O. Chapuis, M. Massoud, T. Nghiem, J.M. Bluet, V. Lacatena, et al.. Heat conduction in 2D phononic structures. WE-Heraeus-Seminar “Heat Transfer and Heat Conduction on the Nanoscale”, Apr 2016, Bad Honnef, Germany. ⟨hal-01475329⟩
  • M. Massoud, V. Lacatena, M. Haras, S. Didenko, P.O. Chapuis, et al.. Comparative thermal characterization of nanophononic membrane strips by Raman thermometry, scanning thermal microscopy, and an electro-thermal method. Eurotherm 108: Nanoscale and Microscale Heat Transfer V, Sep 2016, Santorini, Greece. ⟨hal-01475299⟩
  • Julien Borrel, Louis Hutin, Helen Grampeix, Emmanuel Nolot, Magali Tessaire, et al.. Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges. IWJT 2016 - 16th International Workshop on Junction Technology, May 2016, Shanghai, China. pp.14-19. ⟨hal-03325000⟩
  • J. Borrel, L. Hutin, H. Grampeix, E. Nolot, E. Ghegin, et al.. Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts. IEEE Silicon Nanoelectronics Workshop (SNW), Jun 2016, Honolulu, United States. pp.140-141, ⟨10.1109/SNW.2016.7578022⟩. ⟨hal-03325002⟩
  • Justine Philippe, A. Lecavelier, M. Berthome, J.F. Robillard, Christophe Gaquière, et al.. Application-oriented performance of RF CMOS technologies on flexible substrates. IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. ⟨10.1109/IEDM.2015.7409707⟩. ⟨hal-03272696⟩
  • Justine Philippe, Aurelien Lecavelier Des Etangs-Levallois, Philip Latzel, Francois Danneville, Jean-François Robillard, et al.. Characterization of flexible CMOS technology tranferred onto a metallic foil. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Jan 2015, Bologna, Italy. ⟨10.1109/ULIS.2015.7063747⟩. ⟨hal-03272691⟩
  • V. Lacatena, M. Haras, J.F. Robillard, T. Skotnicki, E. Dubois, et al.. Thermal Conductivity Reduction in Fully Suspended and Periodically Patterned Membranes Measured by Electro-Thermal Method. MRS Fall meeting, Symposium II on “Phonons”, Nov 2015, Boston, United States. ⟨hal-01464806⟩
  • Sofiene Bouaziz, Matthieu Berthomé, Jean-François Robillard, Emmanuel Dubois. Ultra-foldable/stretchable wideband RF interconnects using laser ablation of metal film on a flexible substrate. 45th European Microwave Conference (EuMC), Sep 2015, Paris, France. ⟨10.1109/EuMC.2015.7345902⟩. ⟨hal-03325008⟩
  • Justine Philippe, Emmanuel Dubois, François Danneville, Daniel Gloria. Intégration hétérogène de systèmes communicants CMOS-SOI en gamme millimétrique. Doctoriales Lille Nord de France 2014, 2014, Marcq-en-Baroeul, France. ⟨hal-01005696⟩
  • Maciej Haras, V. Lacatena, F. Morini, Jean-François Robillard, S. Monfray, et al.. Fabrication of integrated micrometer platform for thermoelectric measurements. 60th Annual IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. paper 8.5, 8.5.1-8.5.4, ⟨10.1109/IEDM.2014.7047012⟩. ⟨hal-03325009⟩
  • François Morini, E. Dubois, J.F. Robillard, S. Monfray, T. Skotnicki. Low work function thin film growth for high efficiency thermionic energy converter : coupled Kelvin probe and photoemission study of potassium oxide. European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium C - Advanced thermoelectrics : from materials to devices, 2013, Strasbourg, France. ⟨hal-00819702⟩
  • E. Dubois. [Invited] SOI technologies for high-performance flexible electronics. Joint 7th International Workshop ''Functional Nanomaterials and Devices'' and 2nd Ukrainian-French Seminar ''Semiconductor-on-insulator materials, devices and circuits : physics, technology & diagnostic'', 2013, Kyiv, Ukraine. ⟨hal-00819468⟩
  • H. Niebojewski, C. Le Royer, Y. Morand, O. Rozeau, M.A. Jaud, et al.. Self-aligned contacts for 10nm FDSOI node : from device to circuit evaluation. 39th IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, IEEE S3S 2013, 2013, Monterey, CA, United States. paper 6a.4, 2 p., ⟨10.1109/S3S.2013.6716549⟩. ⟨hal-00955675⟩
  • V. Lacatena, M. Haras, J.F. Robillard, S. Monfray, T. Skotnicki, et al.. Phononic engineering of silicon using dots on the fly 'electron beam lithography and plasma etching'. 39th International Conference on Micro and Nano Engineering, MNE 2013, 2013, London, United Kingdom. ⟨hal-00878809⟩
  • H. Niebojewski, C. Le Royer, Y. Morand, M.A. Jaud, O. Rozeau, et al.. Extra-low parasitic gate-to-contacts capacitance architecture for sub-14nm transistor nodes. 9th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2013, 2013, Paris, France. ⟨hal-00878810⟩
  • J.P. Simonato, L. Ordronneau, A. Carella, V. Passi, E. Dubois, et al.. [Invited] Detection of neurotoxic gases by functionalized silicon nanowire field-effect transistors. ImagieNano Conference, Security & Defense, NanoSD 2013, 2013, Bilbao, Spain. ⟨hal-00811786⟩
  • Y. Tagro, A. Lecavelier Des Etangs-Levallois, L. Poulain, S. Lepilliet, D. Gloria, et al.. High frequency noise potentialities of reported CMOS 65 nm SOI technology on flexible substrate. 12th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems, SiRF 2012, 2012, Santa Clara, CA, United States. pp.89-92, ⟨10.1109/SiRF.2012.6160147⟩. ⟨hal-00801054⟩
  • N. Clement, G. Larrieu, E. Dubois. Low-frequency noise in Schottky barriers based nanoscale field-effect transistors. Materials Research Society Spring Meeting, MRS Spring 2012, Symposium D : Nanocontacts - Emerging Materials and Processing for Ohmicity and Rectification, 2012, San Francisco, CA, United States. ⟨hal-00797702⟩
  • A. Lecavelier Des Etangs-Levallois, V. Passi, Z.K. Chen, François Morini, E. Dubois. Characterization of PtSi nanowires transferred onto organic film. 38th International Micro & Nano Engineering Conference, MNE 2012, 2012, Toulouse, France. ⟨hal-00797774⟩
  • V. Passi, A. Lecavelier Des Etangs-Levallois, Z.K. Chen, François Morini, E. Dubois. Room temperature process for direct writing of nanostructures on plastic. 38th International Micro & Nano Engineering Conference, MNE 2012, 2012, Toulouse, France. ⟨hal-00797783⟩
  • A. Carella, S. Clavaguera, C. Celle, S. Lenfant, D. Vuillaume, et al.. Electrical nerve agents sensors based on chemically functionalized nanomaterials. NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, 2012, Santa Clara, CA, United States. pp.130-132. ⟨hal-00801097⟩
  • François Morini, E. Dubois, T. Skotnicki, S. Monfray. Principe alternatif de conversion thermoélectrique : nouveaux matériaux à faible travail d'extraction. 14èmes Journées Nationales du Réseau Doctoral de Micro et Nanoélectronique, JNRDM 2011, 2011, Cachan, France. pp.1-4. ⟨hal-00806677⟩
  • L. Silvestri, S. Reggiani, V. Passi, F. Ravaux, E. Dubois, et al.. TCAD study of the detection mechanisms in silicon nanoribbon-based gas sensors. 41st European Solid-State Device Research Conference, ESSDERC 2011, 2011, Helsinki, Finland. paper ID 5173, 131-134. ⟨hal-00800024⟩
  • J.P. Simonato, A. Carella, S. Clavaguera, M. Delalande, S. Lenfant, et al.. Innovative electrical sensors for highly toxic gases based on carbon nanotubes and silicon nanowires. Materials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Semiconductor nanowires for photovoltaics, 2011, Boston, MA, United States. ⟨hal-00807191⟩
  • X.L. Han, G. Larrieu, E. Dubois. Fabrication and electrical characterization of dense vertical Si nanowires arrays. European Materials Research Society Spring Meeting, E-MRS Spring 2010, Symposium P : Science and technology of nanotubes, nanowires and graphene, 2010, Strasbourg, France. ⟨hal-00574100⟩
  • A. Lecavelier Des Etangs-Levallois, E. Dubois, F. Danneville, D. Gloria, C. Raynaud. Report hétérogène de dispositifs et circuits CMOS RF sur substrat souple. 13èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2010, 2010, France. pp.CD-ROM, Session Systèmes hautes fréquences, 1-4. ⟨hal-00573208⟩
  • V. Passi, J.P. Raskin, F. Ravaux, E. Dubois. Backgate bias and stress level impact on giant piezoresistance effect in thin silicon films and nanowires. 23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010, 2010, China. pp.464-467, ⟨10.1109/MEMSYS.2010.5442464⟩. ⟨hal-00549973⟩
  • Aurélie Lecestre, E. Dubois, A. Villaret, P. Coronel, T. Skotnicki, et al.. Synthesis and characterization of crystalline silicon ribbons on insulator using catalytic Vapor-Liquid-Solid growth inside a cavity. 6th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2010, 2010, France. pp.99-100. ⟨hal-00549974⟩
  • E. Dubois, G. Larrieu, N. Breil, R. Valentin, F. Danneville, et al.. Metallic source/drain for advanced MOS architectures : from material engineering to device integration. SINANO-NANOSIL Workshop, Silicon-based CMOS and Beyond-CMOS Nanodevices, 2009, Athens, Greece. ⟨hal-00575267⟩
  • E. Dubois, G. Larrieu, N. Breil, R. Valentin, F. Danneville, et al.. Metallic source/drain architecture for advanced MOS technology : an overview of METAMOS results. 8th Symposium Diagnostics & Yield : Advanced Silicon Devices and Technologies for ULSI Era, 2009, Warsaw, Poland. ⟨hal-00575696⟩
  • Xing Tang, F. Ravaux, E. Dubois, E. Kasper, K. Alim, et al.. Self-aligned single-electron memory fabrication based on Si/SiGe/Si heterostructures. 35th International Conference on Micro & Nano Engineering, MNE 2009, 2009, Ghent, Belgium. ⟨hal-00575272⟩
  • D.A. Yarekha, G. Larrieu, E. Dubois, S. Godey, X. Wallart, et al.. Investigation of the ytterbium silicide as low Schottky barrier source/drain contact material for n-type MOSFET. Journées Nationales sur les Technologies Emergentes en Micro-nanofabrication, JNTE 08, 2008, Toulouse, France. ⟨hal-00361550⟩
  • E. Dubois, G. Larrieu, N. Breil, R. Valentin, F. Danneville, et al.. Recent advances in metallic source/drain MOSFETs. 8th International Workshop on Junction Technology, IWJT'08, 2008, Shanghai, China. pp.139-144, ⟨10.1109/IWJT.2008.4540035⟩. ⟨hal-00800974⟩
  • V. Passi, Aurélie Lecestre, E. Dubois, J.P. Raskin. Selective etching of implanted silicon dioxide in hydrofluoric acid. 34th International Conference on Micro and Nano Engineering, MNE 2008, 2008, Athens, Greece. ⟨hal-00361548⟩
  • J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, N. Reckinger, et al.. Electron microscopy of silicides formation in Schottky barrier contacts to electronic devices. XIII International Conference on Electron Microscopy, EM'2008, 2008, Cracow-Zakopane, Poland. ⟨hal-00361545⟩
  • Aurélie Lecestre, E. Dubois, A. Villaret, P. Coronel, T. Skotnicki. Confined and guided catalytic growth of crystalline silicon films on a dielectric substrate. ESS-Fringe Poster Session of 2008 European Solid-State Device Research Conference, ESSDERC 2008, 2008, Edinburgh, Scotland, United Kingdom. ⟨hal-00361551⟩
  • G. Larrieu, E. Dubois, D. Yarekha, N. Breil, N. Reckinger, et al.. Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance. European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, _, France. ⟨hal-00361543⟩
  • N. Breil, A. Halimaoui, E. Dubois, E. Lampin, L. Godet, et al.. Investigation on the platinum silicide Schottky barrier height modulation using a dopant segregation approach. Materials Research Society Spring Meeting, MRS Spring 2008, Symposium E : Doping Engineering for Front-End Processing, 2008, United States. pp.85-90. ⟨hal-00360805⟩
  • F. Balestra, E. Parker, D. Leadley, S. Mantl, E. Dubois, et al.. NANOSIL Network of Excellence : silicon-based nanostructures and nanodevices for long-term nanoelectronics applications. European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, Strasbourg, France. ⟨hal-00361546⟩
  • A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, V. Srot, et al.. Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/SiO2/Si structure. European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, Strasbourg, France. ⟨hal-00361547⟩
  • F. Balestra, E. Parker, D. Leadley, S. Mantl, E. Dubois, et al.. NANOSIL Network of Excellence: Silicon-based nanostructures and nanodevices for long-term nanoelectronics applications. European Materials Research Society (E-MRS 2008), Symposium, May 2008, Strasbourg, France. ⟨hal-00391849⟩
  • Aurélie Lecestre, E. Dubois, A. Villaret, P. Coronel, T. Skotnicki. Localized and oriented catalytic growth of crystalline silicon nanoribbons. Journées Nationales sur les Technologies Emergentes en Micro-nanofabrication, JNTE 08, 2008, Toulouse, France. ⟨hal-00361549⟩
  • J. Ratajczak, A. Laszcz, A. Czerwinski, J. Katcki, F. Phillipp, et al.. Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications. XIII International Conference on Electron Microscopy, EM'2008, 2008, Cracow-Zakopane, Poland. ⟨hal-00361544⟩
  • R. Valentin, E. Dubois, J.P. Raskin, G. Dambrine, G. Larrieu, et al.. Investigations of high frequency performance of Schottky-barrier MOSFETs. 7th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2007, 2007, United States. pp.32-35, ⟨10.1109/SMIC.2007.322762⟩. ⟨hal-00284381⟩
  • F. Danneville, R. Valentin, E. Dubois, G. Dambrine. High frequency figures of merit of conventional and Schottky barrier MOSFETs. 4th International Symposium on System Construction of Global-Network-Oriented Information Electronics, 2007, Sendai, Japan. pp.412-417. ⟨hal-00286235⟩
  • G. Larrieu, E. Dubois, R. Valentin, N. Breil, F. Danneville, et al.. Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETs. IEEE International Electron Devices Meeting, IEDM 2007, 2007, United States. pp.147-150, ⟨10.1109/IEDM.2007.4418886⟩. ⟨hal-00284387⟩
  • N. Breil, E. Dubois, A. Pouydebasque, T. Skotnicki. Impact of n-type channel implantation on performance of p-type Schottky barrier MOSFETs. Proceedings of the 12th Silicon Nanoelectronics Workshop, SNW 2007, 2007, Kyoto, Japan. ⟨hal-00367365⟩
  • E. Dubois, G. Larrieu, N. Breil, M. Ostling, P.E. Hellström, et al.. Metallic source/drain architecture : status and prospects. SINANO-ESSDERC Workshop, 2007, Munich, Germany. ⟨hal-00367349⟩
  • N. Breil, A. Halimaoui, E. Dubois, G. Larrieu, J. Ratajczak, et al.. An original selective etch of Pt vs PtSi using a low temperature germanidation process. Proceedings of the 211th Electrochemical Society Meeting, 2007, Chicago, IL, United States. ⟨hal-00367361⟩
  • N. Breil, E. Dubois, Y. Morand, V. Carron, A. Halimaoui, et al.. Erbium silicide formation under ultra high vacuum. Proceedings of the 16th European Workshop on Materials for Advanced Metallization, MAM 2007, 2007, Bruges, Belgium. ⟨hal-00367362⟩
  • A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, N. Breil, et al.. TEM study of the silicidation process in Pt/Si and Ir/Si structures. Proceedings of the 15th International Conference on Microscopy of Semiconducting Materials, MSMXV, 2007, Cambridge, United Kingdom. ⟨hal-00367363⟩
  • F. Cornu-Fruleux, J. Penaud, E. Dubois, P. Coronel, G. Larrieu, et al.. Dual silicide integration of low Schottky-barrier source-drain in a spacer-first damascene-metal-gate FinFET architecture. Proceedings of the 12th Silicon Nanoelectronics Workshop, SNW 2007, 2007, Kyoto, Japan. ⟨hal-00367364⟩
  • R. Valentin, A. Siligaris, G. Pailloncy, E. Dubois, G. Dambrine, et al.. Influence of gate offset spacer width on SOI MOSFETs HF properties. 2006, pp.77-80. ⟨hal-00126800⟩
  • A. Łaszcz, J. Katcki, J. Ratajczak, A. Czerwinski, N. Breil, et al.. TEM study of PtSi contact layers for accumulated low Schottky barrier MOSFET. 2006, pp.U/PI.24. ⟨hal-00138674⟩
  • G. Larrieu, E. Dubois, X. Wallart, J. Katcki. Iridium silicide : a promising electrode for metallic source/drain in decananometer MOSFETs. 2006, pp.123. ⟨hal-00138682⟩
  • C. Charbuillet, S. Monfray, E. Dubois, P. Bouillon, T. Skotnicki. High current drive in ultra-short impact ionization MOS (I-MOS) devices. 2006, paper 6.2. ⟨hal-00138690⟩
  • C. Charbuillet, E. Dubois, S. Monfray, P. Bouillon, T. Skotnicki. Fabrication and analysis of CMOS fully-compatible high conductance impact-ionization MOS (I-MOS) transistors. 2006, pp.299-302. ⟨hal-00138680⟩
  • E. Dubois, G. Larrieu. Integration and performance of Schottky junction SOI devices. 6th International Workshop on Junction Technology, IWJT-2006, 2006, Shanghai, China. ⟨hal-00138707⟩
  • E. Dubois, G. Larrieu. 40 nm PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate. 7th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for ULSI Era, 2006, Warsaw, Poland. ⟨hal-00138697⟩
  • Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, E. Dubois, et al.. Room temperature single-electron operation and fabrication of downscaled self-aligned single-dot memory devices. Materials Research Society Spring Meeting, MRS Spring 2006, 2006, San Francisco, CA, United States. ⟨hal-00244026⟩
  • Christophe Krzeminski, E. Dubois. Large optimisation of source/drain architecture in double gate CMOS using combined static and transient analysis. Materials Research Society Spring Meeting, MRS Spring 2006, Transistor Scaling - Methods, Materials, and Modeling, 2006, Moscone West, San-Franscico, CA, United States. ⟨hal-00138694⟩
  • F. Fruleux, J. Penaud, E. Dubois, M. Francois, M. Muller. An optimal high contrast e-beam lithography process for the patterning of dense fin networks. 2005, pp.A/PII.01. ⟨hal-00138401⟩
  • J. Penaud, F. Fruleux, E. Dubois. Transformation of hydrogen silsexquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs. 2005, pp.P-P.15. ⟨hal-00138399⟩
  • A. Laszcz, J. Katcki, J. Ratajczak, A. Czerwinski, E. Dubois, et al.. TEM characterisation of accumulation low Schottky barrier MOSFET with PtSi contacts. School on Materials Science and Electron Microscopy, Microscopy of Tomorrow's Industrial Materials, 2005, Berlin, Germany. ⟨hal-00138408⟩
  • F. Fruleux, J. Penaud, E. Dubois, M. Francois, M. Muller. Optimisation of HSQ e-beam lithography for the patterning of FinFET transistors. 2005, pp.9C01. ⟨hal-00138404⟩
  • H. Xu, E. Lampin, E. Dubois, F. Murray, S. Bardy. Impact of large angle tilt implantation on the threshold voltages of LDMOS transistor on SOI. 2005, pp.D-VI.08. ⟨hal-00138400⟩
  • E. Dubois, G. Larrieu, N. Breil, Xing Tang, N. Recklinger, et al.. Schottky-barrier source-drain architecture for ultimate CMOS. SINANO Workshop, 2005, Grenoble, France. ⟨hal-00138409⟩
  • A. Łaszcz, J. Katcki, J. Ratajczak, Xing Tang, E. Dubois. Transmission electron microscopy study of erbium silicide formation using a Pt/Er stack on a thin silicon-on-insulator substrate. Proceedings of the XII International Conference on Electron Microscopy of Solids, EM'2005, 2005, Kazimierz Dolny, Poland. ⟨hal-00139246⟩
  • J. Knock, E. Dubois, G. Larrieu, Xing Tang, N. Recklinger, et al.. Recent advances in metallic source-drain engineering. SINANO Workshop, 2005, Grenoble, France. ⟨hal-00138411⟩
  • Xing Tang, N. Reckinger, V. Bayot, E. Dubois, Christophe Krzeminski, et al.. Self-aligned single-electron memories SASEM project (IST-2001-32674). 15th NID Workshop - Plenary Meeting, 2005, Madrid, Spain. ⟨hal-00138410⟩
  • J. Penaud, F. Fruleux, E. Dubois, G. Larrieu. Advanced and nanometric MOSFET architecture, multiple gate devices and Pi gates. MIGAS International Summer School on Advanced Microelectronics, MIGAS'04, 2004, Autrans, France. ⟨hal-00140995⟩
  • G. Larrieu, E. Dubois. Transistor MOSFET Schottky en régime nanométrique. Journées Nationales Nanoélectronique, 2004, Aussois, France. ⟨hal-00140994⟩
  • F. Fruleux, J. Penaud, E. Dubois, G. Larrieu. FinFET achievement : optimum e-beam lithography to etch dense silicon fins networks. MIGAS International Summer School on Advanced Microelectronics, MIGAS'04, 2004, Autrans, France. ⟨hal-00140996⟩
  • J. Katcki, J. Ratajczak, A. Laszcz, E. Dubois, G. Larrieu, et al.. Transmission electron microscopy of silicides used in ALSB-SOI MOSFET structure. 2004, pp.479-482. ⟨hal-00147750⟩
  • A. Laszcz, J. Katcki, J. Ratajczak, E. Dubois, G. Larrieu, et al.. Transmission Electron Microscopy analysis of MOSFET structures. School on Materials Science and Electron Microscopy, Emerging Microscopy for Advanced Materials Development-Imaging and Spectroscopy on Atomic Scale, 2004, Berlin, Germany. ⟨hal-00140997⟩
  • E. Dubois, G. Larrieu. Intégration de source/drain Schottky en technologie MOS décananométrique. Journée Club EEA : Electronique des Dispositifs Ultimes et Innovants, 2004, Fuveau, France. ⟨hal-00141009⟩
  • Christophe Krzeminski, E. Dubois, Xing Tang, N. Reckinger, A. Crahay, et al.. Simulation et optimisation d'une mémoire flash nanométrique. Journées Nationales Nanoélectronique, 2004, Aussois, France. ⟨hal-00140993⟩
  • Christophe Krzeminski, E. Dubois, Xing Tang, N. Reckinger, A. Crahay, et al.. Optimisation and simulation of an alternative nano-flash memory : the SASEM device. 2004, pp.45-50. ⟨hal-00140991⟩
  • E. Dubois, Christophe Krzeminski, G. Larrieu, X. Baie, Xing Tang, et al.. Integration of Schottky source/drain in advanced MOS technology : the SODAMOS project. 13th Melari/NID Workshop, 2004, Athens, Greece. ⟨hal-00141008⟩
  • Xing Tang, J. Katcki, E. Dubois, J. Ratajczak, G. Larrieu, et al.. Very low Schottky barrier to n-type silicon with PtEr-stack silicide. 2003, pp.99-104. ⟨hal-00146416⟩
  • E. Dubois. New Schottky source/drain architectures. Workshop Micro et Nanoélectronique, 2003, Crolles, France. ⟨hal-00146417⟩
  • A. Laszcz, J. Katcki, J. Ratajczak, G. Larrieu, E. Dubois, et al.. Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain. European Materials Research Society Fall Meeting, 2003, Warsaw, Poland. ⟨hal-00146424⟩
  • J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, E. Dubois, et al.. Electron microscopy analysis of MOSFET structures. 2003, pp.67-70. ⟨hal-00146402⟩
  • J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, E. Dubois, et al.. Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structures. Conference on Microscopy of Semiconducting Materials, 2003, United Kingdom. pp.479-482. ⟨hal-00250182⟩
  • G. Larrieu, E. Dubois, X. Wallart. Performance of Pt-based low Schottky barrier silicide contacts on weakly doped silicon. 2003, pp.D791-D796. ⟨hal-00146405⟩
  • E. Dubois, G. Larrieu. Advanced source/drain architecture using very low Schottky barriers : device design and material engineering. 2001, pp.203-206. ⟨hal-00152202⟩
  • E. Dubois, G. Larrieu. Low Schottky barrier source/drain for advanced MOS architecture : device, design and material consideration. 2001, pp.53-56. ⟨hal-00152233⟩
  • E. Dubois, K. Suzuki, E. Lampin. Power LDMOS design using an SOI RESURF architecture : on state / breakdown voltage trade-off. Franco-Swedish Workshop on SOI, 2001, Grenoble, France. ⟨hal-00152238⟩
  • E. Dubois. Silicon nanoelectronics. Micro and Nano Workshop, 2001, Louvain La Neuve, Belgium. ⟨hal-00152236⟩
  • E. Dubois, G. Larrieu. Low Schottky barrier source/drain for advanced MOS architecture. Franco-Swedish Workshop on SOI, 2001, Grenoble, France. ⟨hal-00152239⟩
  • E. Dubois, V. Senez, G. Dambrine, A. Kaiser. Intégration silicium à l'IEMN : de l'architecture de composants aux circuits radiofréquences. Journée Thématique de l'ANRT sur l'Intégration, 2000, Paris, France. ⟨hal-00158505⟩
  • E. Dubois. Mémoires électroniques du futur : évolution de la microélectronique silicium. Fête de la Science, 2000, Lille, France. ⟨hal-00158535⟩

Poster communications1 document

  • Jun Yin, Tianqi Zhu, Di Zhou, Thierno Moussa Bah, Stanislav Didenko, et al.. Nanometer-scale active thermal devices for thermal microscopy probe calibration. 16èmes Journées de La Matière Condensée (JMC2018), Aug 2018, Grenoble, France. pp.513-513. ⟨hal-02023911⟩

Book sections3 documents

  • Aurélie Lecestre, E. Dubois, A. Villaret, T. Skotnicki, P. Coronel, et al.. Confined and guided vapor-liquid-solid catalytic growth of silicon nanoribbons : from nanowires to structured silicon-on-insulator layers. Nazarov A., Colinge J.P., Balestra F., Raskin J.P., Gamiz F., Lysenko V.S. Semiconductor-on-insulator materials for nanoelectronics applications, Springer Berlin Heidelberg, pp.Part 1, 67-89, 2011, Collection : Chemistry and materials science, Series : Engineering materials, ⟨10.1007/978-3-642-15868-1_4⟩. ⟨hal-00591734⟩
  • E. Dubois, G. Larrieu, R. Valentin, N. Breil, F. Danneville. Introduction to Schottky-barrier MOS architectures : concept, challenges, material engineering and device integration. Balestra F. Nanoscale CMOS : innovative materials, modeling and characterization, ISTE-WILEY, Chapitre 5, 157-204, 2010. ⟨hal-00575852⟩
  • E. Dubois. Les nanotechnologies. Encyclopédie KLEIO, Larousse-Havas, pp.CD-ROM, 2001. ⟨hal-00132071⟩

Patents4 documents

  • S. Monfray, T. Skotnicki, E. Dubois. Convertisseur d'énergie à effet tunnel. N° de brevet: FR2985851 (A1) 2013-07-19. 2013. ⟨hal-00847262⟩
  • G. Larrieu, E. Dubois. Procédé de fabrication de transistors MOSFET complémentaires de type P et N, et dispositif électronique comprenant de tels transistors, et processeur comprenant au moins un tel dispositif. N° de brevet: FR2930073 (A1). 2009. ⟨hal-00426616⟩
  • E. Dubois, F. Fruleux-Cornu, J. Penaud, P. Coronel. Réalisation d'un transistor à effet de champ. N° de brevet: FR2905800 (A1). 2008. ⟨hal-00372049⟩
  • E. Dubois. Transistor MOS pour circuits à haute densité d'intégration. N° de brevet: FR2805395 (A1). 2001. ⟨hal-00372674⟩

Other publications1 document

  • E. Dubois. Contributions à la modélisation et à la fabrication de dispositifs silicium avancée. 2005. ⟨hal-00138412⟩