Skip to Main content

Keywords

Researcher identifiers

Number of documents

230

Curriculum vitae of Emmanuel Dubois


Emmanuel Dubois received the Ingénieur degree from the Institut Supérieur d’Electronique et du Numérique (ISEN), Lille, France, in 1985 and the Ph. D. degree from the University of Lille in 1990. In 1992, he was a visiting scientist at the IBM T.J. Watson Research Centre, Yorktown Heights, working on characterization and simulation of submicron SOI-MOSFETs. In 1993, he joined the Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN UMR 8520) where he is currently Director of Research at the Centre National de la Recherche Scientifique, CNRS. He was coordinator or task leader of a series of European projects focused on ultimate non-conventional MOSFETs (FP4-IST-QUEST, FP5-IST-SODAMOS, FP6-IST-METAMOS, FP6 SiNANO NoE, FP7 NANOSIL NoE, FP6 NANOCMOS IP, FP6 PULLNANO IP). He currently heads the STMicroelectronics-IEMN Common Laboratory. From 2005 to 2016, he was on the Technical Program Committee of ESSDERC and was TPC member of the VSLI Symposium on Technology (2018-2019-2020). Until 2017, he participated to the nanoelectronics committee of the French Observatory on Micro and NanoTechnologies (OMNT). He is currently involved in functional packaging (System-Moore) and coordinator of the PIA-EQUIPEX project LEAF on advanced laser-based microfabrication. His research interests cover advanced source/drain CMOS technology, non-conventional thermal energy harvesting, laser micromachining and functional packaging for RF, mmW and photonics.


Journal articles92 documents

  • Antonin Massoud, Valeria Lacatena, Maciej Haras, Emmanuel Dubois, Stéphane Monfray, et al.. Heat dissipation in partially perforated phononic nano-membranes with periodicities below 100 nm. APL Materials, AIP Publishing 2022, 10 (5), pp.051113. ⟨10.1063/5.0091539⟩. ⟨hal-03682509⟩
  • Vincent Thiéry, Emmanuel Dubois, Séverine Bellayer. The good, the bad and the ugly polishing: Effect of abrasive size on standardless EDS analysis of Portland cement clinker’s calcium silicates. Micron, Elsevier, 2022, 158, pp.103266. ⟨10.1016/j.micron.2022.103266⟩. ⟨hal-03662917⟩
  • Arun Bhaskar, Justine Philippe, Etienne Okada, Flavie Braud, J.F. Robillard, et al.. Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension. Electronics, MDPI, 2022, 11 (15), pp.2333. ⟨10.3390/electronics11152333⟩. ⟨hal-03739747⟩
  • Arun Bhaskar, Justine Philippe, Flavie Braud, Etienne Okada, Vanessa Avramovic, et al.. Large-area femtosecond laser milling of silicon employing trench analysis. Optics and Laser Technology, Elsevier, 2021, 138, pp.106866. ⟨10.1016/j.optlastec.2020.106866⟩. ⟨hal-03091197⟩
  • Arun Bhaskar, Justine Philippe, Vanessa Avramovic, Flavie Braud, J.F. Robillard, et al.. Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA. IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2020, 8, pp.959-969. ⟨10.1109/JEDS.2020.3019884⟩. ⟨hal-03091190⟩
  • Justine Philippe, Arun Bhaskar, Etienne Okada, Flavie Braud, J.F. Robillard, et al.. Thermal analysis of ultimately-thinned-and-transfer-bonded CMOS on mechanically flexible foils. IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2019, 7, pp.973-978. ⟨10.1109/JEDS.2019.2939884⟩. ⟨hal-02317229⟩
  • Romain Peretti, Flavie Braud, Emilien Peytavit, Emmanuel Dubois, Jean-Francois Lampin. Broadband terahertz light-matter interaction enhancement for precise spectroscopy of thin films and micro-samples. Photonics, MDPI, 2018, 5 (2), pp.11. ⟨10.3390/photonics5020011⟩. ⟨hal-02317238⟩
  • Julien Borrel, Louis Hutin, Donato Kava, Rémy Gassilloud, Nicolas Bernier, et al.. Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2017, 56 (4), 04CB02, 7 p. ⟨10.7567/JJAP.56.04CB02⟩. ⟨hal-03325004⟩
  • Jean-Marc Boucaud, Folly-Eli Ayi-Yovo, Quentin Hivin, Matthieu Berthomé, Cédric Durand, et al.. Cost effective laser structuration of optical waveguides on thin glass interposer. Journal of Lightwave Technology, Institute of Electrical and Electronics Engineers (IEEE)/Optical Society of America(OSA), 2017, 35 (20), pp.4445-4450. ⟨10.1109/JLT.2017.2732461⟩. ⟨hal-01961118⟩
  • Nicolas Reckinger, Xiaohui Tang, Frederic Joucken, Luc Lajaunie, Raul Arenal, et al.. Oxidation-assisted graphene heteroepitaxy on copper foil. Nanoscale, Royal Society of Chemistry, 2016, 8 (44), pp.18751-18759. ⟨10.1039/c6nr02936a⟩. ⟨hal-03325005⟩
  • Julien Borrel, Louis Hutin, Olivier Rozeau, Marie-Anne Jaud, Sebastien Martinie, et al.. Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part I. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2016, 63 (9), pp.3413-3418. ⟨10.1109/TED.2016.2590836⟩. ⟨hal-03325007⟩
  • Maciej Haras, Valeria Lacatena, Thierno Moussa Bah, Stanislav Didenko, J.F. Robillard, et al.. Fabrication of thin-film silicon membranes with phononic crystals for thermal conductivity measurements. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2016, 37 (10), pp.1358-1361. ⟨10.1109/LED.2016.2600590⟩. ⟨hal-03276234⟩
  • K. Smaali, David Guérin, V. Passi, L. Ordronneau, A. Carella, et al.. Physical study by surface characterizations of sarin sensor on the basis of chemically functionalized silicon nanoribbon field effect transistor. Journal of Physical Chemistry C, American Chemical Society, 2016, 120 (20), pp.11180-11191. ⟨10.1021/acs.jpcc.6b00336⟩. ⟨hal-03325001⟩
  • V. Giorgis, François Morini, T. Zhu, J.F. Robillard, X. Wallart, et al.. Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters. Journal of Applied Physics, American Institute of Physics, 2016, 120 (20), pp.205108. ⟨10.1063/1.4968532⟩. ⟨hal-03276235⟩
  • Julien Borrel, Louis Hutin, Olivier Rozeau, Marie-Anne Jaud, Sebastien Martinie, et al.. Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part II. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2016, 63 (9), pp.3419-3423. ⟨10.1109/TED.2016.2590826⟩. ⟨hal-03325006⟩
  • V. Lacatena, M. Haras, J.F. Robillard, S. Monfray, T. Skotnicki, et al.. Toward quantitative modeling of silicon phononic thermocrystals. Applied Physics Letters, American Institute of Physics, 2015, 106 (11), 114104, 4 p. ⟨10.1063/1.4915619⟩. ⟨hal-03324999⟩
  • Maciej Haras, Valeria Lacatena, François Morini, J.F. Robillard, Stephane Monfray, et al.. Thermoelectric energy conversion: How good can silicon be?. Materials Letters, Elsevier, 2015, 157, pp.193-196. ⟨10.1016/j.matlet.2015.05.012⟩. ⟨hal-03325003⟩
  • François Morini, Emmanuel Dubois, J.F. Robillard, Stéphane Monfray, Thomas Skotnicki. Low work function thin film growth for high efficiency thermionic energy converter : coupled Kelvin probe and photoemission study of potassium oxide. physica status solidi (a), Wiley, 2014, 211, pp.1334-1337. ⟨10.1002/pssa.201300136⟩. ⟨hal-01005619⟩
  • Valeria Lacatena, Maciej Haras, J.F. Robillard, Stéphane Monfray, Thomas Skotnicki, et al.. Phononic engineering of silicon using "dots on the fly" e-beam lithography and plasma etching. Microelectronic Engineering, Elsevier, 2014, 121, pp.131-134. ⟨10.1016/j.mee.2014.04.034⟩. ⟨hal-00994777⟩
  • Maciej Haras, Valeria Lacatena, Stéphane Monfray, J.F. Robillard, Thomas Skotnicki, et al.. Unconventional thin-film thermoelectric converters : structure, simulation, and comparative study. Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2014, 43, pp.2109-2114. ⟨10.1007/s11664-014-2982-z⟩. ⟨hal-00994781⟩
  • Heimanu Niebojewski, C. Le Royer, Y. Morand, O. Rozeau, M.A. Jaud, et al.. Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes. Solid-State Electronics, Elsevier, 2014, 97, pp.45-51. ⟨10.1016/j.sse.2014.04.028⟩. ⟨hal-01000014⟩
  • V. Passi, Emmanuel Dubois, Aurélie Lecestre, A. Sanchez-Linde, B. Du Bois, et al.. Design guidelines for releasing silicon nanowire arrays by liquid and vapor phase hydrofluoric acid. Microelectronic Engineering, Elsevier, 2013, 103, pp.57-65. ⟨10.1016/j.mee.2012.09.002⟩. ⟨hal-00795975⟩
  • A. Lecavelier Des Etangs-Levallois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, et al.. Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics. Solid-State Electronics, Elsevier, 2013, 90, pp.73-78. ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00914203⟩
  • A. Lecavelier Des Etangs-Levallois, Z. K. Chen, Marie Lesecq, Sylvie Lepilliet, Y. Tagro, et al.. A converging route towards very high frequency, mechanically flexible, and performance stable integrated electronics. Journal of Applied Physics, American Institute of Physics, 2013, 113 (15), pp.153701. ⟨10.1063/1.4801803⟩. ⟨hal-00819466⟩
  • Vikram Passi, Ulf Sodervall, Bengt Nilsson, Goran Petersson, Mats Hagberg, et al.. Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release. Microelectronic Engineering, Elsevier, 2012, 95, pp.83-89. ⟨10.1016/j.mee.2012.01.005⟩. ⟨hal-00643499⟩
  • Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville. Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology. Microelectronic Engineering, Elsevier, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩
  • N. Reckinger, C.A. Dutu, Xing Tang, Emmanuel Dubois, Dmitri Yarekha, et al.. Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer. Thin Solid Films, Elsevier, 2012, 520, pp.4501-4505. ⟨10.1016/j.tsf.2012.02.076⟩. ⟨hal-00787381⟩
  • X.-L. Han, Guilhem Larrieu, Emmanuel Dubois, Fuccio Cristiano. Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts. Surface Science, Elsevier, 2012, 606 (9-10), pp.836 - 839. ⟨10.1016/j.susc.2012.01.021⟩. ⟨hal-01921880⟩
  • N. Clement, G. Larrieu, Emmanuel Dubois. Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59, pp.180-187. ⟨10.1109/TED.2011.2169676⟩. ⟨hal-00787365⟩
  • F. Ravaux, Emmanuel Dubois, Z.K. Chen. Schottky barrier height reduction using strained silicon-on-insulator and dopant segregation. Microelectronic Engineering, Elsevier, 2012, 98, pp.391-394. ⟨10.1016/j.mee.2012.05.045⟩. ⟨hal-00790413⟩
  • A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, N. Breil, et al.. TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors. Central European Journal of Physics, Springer Verlag, 2011, 9, pp.423-427. ⟨10.2478/s11534-010-0135-4⟩. ⟨hal-00574499⟩
  • Xiaohui Tang, Christophe Krzeminski, Aurelien Lecavelier Des Etangs-Levallois, Zhenkun Chen, Emmanuel Dubois, et al.. Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories. Nano Letters, American Chemical Society, 2011, 11, pp.4520-4526. ⟨10.1021/nl202434k⟩. ⟨hal-00640212⟩
  • A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Marie Lesecq, Francois Danneville, L. Poulain, et al.. 150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2011, 32, pp.1510-1512. ⟨10.1109/LED.2011.2166241⟩. ⟨hal-00639864⟩
  • N. Reckinger, C. Poleunis, Emmanuel Dubois, C.A. Dutu, X.H. Tang, et al.. Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation. Applied Physics Letters, American Institute of Physics, 2011, 99 (1), pp.012110. ⟨10.1063/1.3608159⟩. ⟨hal-00639859⟩
  • J.P. Simonato, S. Clavaguera, A. Carella, M. Delalande, N. Raoul, et al.. New chemically functionalized nanomaterials for electrical nerve agents sensors. Journal of Physics: Conference Series, IOP Publishing, 2011, 307, pp.012008-1-5. ⟨10.1088/1742-6596/307/1/012008⟩. ⟨hal-00795903⟩
  • N. Reckinger, Xing Tang, Emmanuel Dubois, G. Larrieu, D. Flandre, et al.. Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width. Applied Physics Letters, American Institute of Physics, 2011, 98 (11), pp.1121021. ⟨10.1063/1.3567546⟩. ⟨hal-00579075⟩
  • V. Passi, Emmanuel Dubois, C. Celle, S. Clavaguera, J.P. Simonato, et al.. Functionalization of silicon nanowires for specific sensing. ECS Transactions, Electrochemical Society, Inc., 2011, 35, pp.313-318. ⟨10.1149/1.3570811⟩. ⟨hal-00591351⟩
  • X.L. Han, G. Larrieu, Pier-Francesco Fazzini, Emmanuel Dubois. Realization of ultra dense arrays of vertical silicon NWs with defect free surface and perfect anisotropy using a top-down approach. Microelectronic Engineering, Elsevier, 2011, 88, pp.2622-2624. ⟨10.1016/j.mee.2010.12.102⟩. ⟨hal-00795901⟩
  • G. Larrieu, Emmanuel Dubois. CMOS inverter based on Schottky source-drain MOS technology with low-temperature dopant segregation. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2011, 32, pp.728-730. ⟨10.1109/LED.2011.2131111⟩. ⟨hal-00603004⟩
  • G. Larrieu, Emmanuel Dubois, D. Ducatteau. CMOS integration using low thermal budget dopant-segregated metallic S/D junctions on thin-body SOI. ECS Transactions, Electrochemical Society, Inc., 2011, 41, pp.275-282. ⟨10.1149/1.3633307⟩. ⟨hal-00795902⟩
  • Vikram Passi, Florent Ravaux, Emmanuel Dubois, Simon Clavaguera, Alexandre Carella, et al.. High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2011, 32, pp.1-3. ⟨10.1109/LED.2011.2146750⟩. ⟨cea-01344105⟩
  • N. Reckinger, Xing Tang, S. Godey, Emmanuel Dubois, A. Laszcz, et al.. Erbium silicide growth in the presence of residual oxygen. Journal of The Electrochemical Society, Electrochemical Society, 2011, 158, pp.H715-H723. ⟨10.1149/1.3585777⟩. ⟨hal-00597075⟩
  • X.L. Han, G. Larrieu, Emmanuel Dubois. Realization of vertical silicon nanowire networks with an ultra high density using a top-down approach. Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2010, 10, pp.7423-7427. ⟨10.1166/jnn.2010.2841⟩. ⟨hal-00549625⟩
  • Aurélie Lecestre, Emmanuel Dubois, A. Villaret, T. Skotnicki, P. Coronel, et al.. Confined VLS growth and structural characterization of silicon nanoribbons. Microelectronic Engineering, Elsevier, 2010, 87, pp.1522-1526. ⟨10.1016/j.mee.2009.11.053⟩. ⟨hal-00549560⟩
  • J. Ratajczak, A. Laszcz, A. Czerwinski, J. Katcki, F. Phillipp, et al.. Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications. Journal of Microscopy, Wiley, 2010, 237, pp.379-383. ⟨10.1111/j.1365-2818.2009.03264.x⟩. ⟨hal-00549623⟩
  • A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, V. Srot, et al.. Characterization of ytterbium silicide formed in ultra high vacuum. Journal of Physics: Conference Series, IOP Publishing, 2010, 209, pp.012056-1-4. ⟨10.1088/1742-6596/209/1/012056⟩. ⟨hal-00549559⟩
  • Christophe Krzeminski, Xiaohui Tang, Nicolas Reckinger, Vincent Bayot, Emmanuel Dubois. Process Optimization and Downscaling of a Single Electron Single Dot Memory. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2009, 8 (9), pp.737-748. ⟨10.1109/TNANO.2009.2021653⟩. ⟨hal-00601623⟩
  • E. Pascual, M.J. Martin, R. Rengel, G. Larrieu, Emmanuel Dubois. Enhanced carrier injection in Schottky contacts using dopant segregation : a Monte Carlo research. Semiconductor Science and Technology, IOP Publishing, 2009, 24, pp.025022-1-6. ⟨10.1088/0268-1242/24/2/025022⟩. ⟨hal-00471970⟩
  • G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, N. Breil, O. Fainot. Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30, pp.1266-1268. ⟨10.1109/LED.2009.2033085⟩. ⟨hal-00471974⟩
  • Dmitri Yarekha, G. Larrieu, N. Breil, Emmanuel Dubois, S. Godey, et al.. UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET. ECS Transactions, Electrochemical Society, Inc., 2009, 19, pp.339-344. ⟨10.1149/1.3118961⟩. ⟨hal-00471999⟩
  • J. Ratajczak, A. Laszcz, A. Czerwinski, J. Katcki, Xing Tang, et al.. TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs. Acta Physica Polonica A, Polish Academy of Sciences. Institute of Physics, 2009, 116, pp.89-91. ⟨hal-00472000⟩
  • Xing Tang, N. Reckinger, V. Bayot, D. Flandre, Emmanuel Dubois, et al.. An electrical evaluation method for the silicidation of silicon nanowires. Applied Physics Letters, American Institute of Physics, 2009, 95, pp.023106-1-3. ⟨10.1063/1.3171929⟩. ⟨hal-00471971⟩
  • G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, D. Deresmes, N. Breil, et al.. Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. ECS Transactions, Electrochemical Society, Inc., 2009, 19, pp.201-207. ⟨10.1149/1.3117410⟩. ⟨hal-00471998⟩
  • Vikram Passi, Aurélie Lecestre, Christophe Krzeminski, Guilhem Larrieu, Emmanuel Dubois, et al.. A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum. Microelectronic Engineering, Elsevier, 2009, 87 (10), pp.1872-1878. ⟨10.1016/j.mee.2009.11.022⟩. ⟨hal-00625915⟩
  • X.H. Tang, V. Bayot, N. Reckinger, D. Flandre, J.P. Raskin, et al.. A simple method for measuring Si-Fin sidewall roughness by AFM. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2009, 8, pp.611-616. ⟨10.1109/TNANO.2009.2021064⟩. ⟨hal-00471972⟩
  • Aurélie Lecestre, Emmanuel Dubois, A. Villaret, P. Coronel, T. Skotnicki, et al.. Confined and guided catalytic growth of crystalline silicon films on a dielectric substrate. IOP Conference Series: Materials Science and Engineering, IOP Publishing, 2009, 6, pp.012022-1-6. ⟨10.1088/1757-899X/6/1/012022⟩. ⟨hal-00471991⟩
  • R. Valentin, Emmanuel Dubois, G. Larrieu, J.P. Raskin, Gilles Dambrine, et al.. Optimization of RF performance of metallic source/drain SOI MOSFETs using dopant segregation at the Schottky interface. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30, pp.1197-1199. ⟨10.1109/LED.2009.2031254⟩. ⟨hal-00471810⟩
  • N. Reckinger, X.H. Tang, V. Bayot, Dmitri Yarekha, S. Godey, et al.. Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing. Applied Physics Letters, American Institute of Physics, 2009, 94 (19), pp.191913. ⟨10.1063/1.3136849⟩. ⟨hal-00471985⟩
  • R. Valentin, Emmanuel Dubois, J.P. Raskin, G. Larrieu, Gilles Dambrine, et al.. RF small signal analysis of Schottky-barrier p-MOSFETs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2008, 55, pp.1192-1202. ⟨10.1109/TED.2008.919382⟩. ⟨hal-00356664⟩
  • Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, et al.. Characterization of ultrathin SOI film and application to short channel MOSFETs. Nanotechnology, Institute of Physics, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩
  • E. Pascual, R. Rengel, N. Reckinger, Xing Tang, V. Bayot, et al.. A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes : influence of direct quantum tunnelling and temperature. physica status solidi (c), Wiley, 2008, 5, pp.119-122. ⟨10.1002/pssc.200776519⟩. ⟨hal-00356974⟩
  • G. Larrieu, Emmanuel Dubois, Dmitri Yarekha, N. Breil, N. Reckinger, et al.. Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance. Materials Science and Engineering: B, Elsevier, 2008, 154-155, pp.159-162. ⟨10.1016/j.mseb.2008.10.014⟩. ⟨hal-00356976⟩
  • A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, V. Srot, et al.. Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/SiO2/Si structure. Materials Science and Engineering: B, Elsevier, 2008, 154-155, pp.175-178. ⟨10.1016/j.mseb.2008.10.002⟩. ⟨hal-00356977⟩
  • N. Breil, Emmanuel Dubois, A. Halimaoui, A. Pouydebasque, G. Larrieu, et al.. Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩
  • N. Reckinger, Xing Tang, V. Bayot, Dmitri Yarekha, Emmanuel Dubois, et al.. Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap. Journal of Applied Physics, American Institute of Physics, 2008, 104 (10), pp.103523. ⟨10.1063/1.3010305⟩. ⟨hal-00356975⟩
  • G. Larrieu, Emmanuel Dubois, X. Wallart, J. Katcki. Kinetics, stoichiometry, morphology and current drive capabilities of Ir-based silicides. Journal of Applied Physics, American Institute of Physics, 2007, 102, pp.094504-1-7. ⟨10.1063/1.2802564⟩. ⟨hal-00255850⟩
  • F. Cornu-Fruleux, J. Penaud, Emmanuel Dubois, P. Coronel, G. Larrieu, et al.. Spacer-first damascene-gate FinFET architecture featuring stringer-free integration. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2007, 28, pp.523-526. ⟨10.1109/LED.2007.897443⟩. ⟨hal-00255851⟩
  • N. Breil, A. Halimaoui, T. Skotnicki, Emmanuel Dubois, G. Larrieu, et al.. Selective etching of Pt with respect to PtSi using a sacrificial low temperature germanidation process. Applied Physics Letters, American Institute of Physics, 2007, 91, pp.232112-1-3. ⟨10.1063/1.2821143⟩. ⟨hal-00255853⟩
  • Christophe Krzeminski, Guilhem Larrieu, Julien Penaud, Evelyne Lampin, Emmanuel Dubois. Silicon dry oxidation kinetics at low temperature in the nanometric range: Modeling and experiment. Journal of Applied Physics, American Institute of Physics, 2007, 101 (064908), pp.064908-1-8. ⟨10.1063/1.2711764⟩. ⟨hal-00600436⟩
  • J. Penaud, F. Fruleux, Emmanuel Dubois. Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs. Applied Surface Science, Elsevier, 2006, 253, pp.395-399. ⟨hal-00138654⟩
  • A. Laszcz, J. Katcki, J. Ratajczak, A. Czerwinski, N. Breil, et al.. TEM study of PtSi contacts layers for low Schottky barrier MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253, pp.274-277. ⟨hal-00138656⟩
  • F. Fruleux, J. Penaud, Emmanuel Dubois, M. Francois, M. Muller. Optimisation of HSQ e-beam lithography for the patterning of FinFET transistors. Microelectronic Engineering, Elsevier, 2006, 83, pp.776-779. ⟨hal-00138652⟩
  • A. Laszcz, A. Czerwinski, J. Ratajczak, J. Katcki, N. Breil, et al.. TEM study of iridium silicide contact layers for low Schottky barrier MOSFETs. Archives of Metallurgy and Materials, Versita, 2006, 51, pp.551-554. ⟨hal-00152968⟩
  • F. Fruleux, J. Penaud, Emmanuel Dubois, M. Francois, M. Muller. An optimal high contrast e-beam lithography process for the patterning of dense fin networks. Materials Science and Engineering: C, Elsevier, 2006, 26, pp.893-897. ⟨hal-00138653⟩
  • Tang Xiaohui, Nicolas Reckinger, Vincent Bayot, Christophe Krzeminski, Emmanuel Dubois, et al.. Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2006, 5 (6), p. 649. ⟨10.1109/TNANO.2006.883481⟩. ⟨hal-00623277⟩
  • Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, et al.. Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2006, 5, pp.649-656. ⟨hal-00138655⟩
  • A. Łaszcz, J. Katcki, J. Ratajczak, Xing Tang, Emmanuel Dubois. TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate. Journal of Microscopy, Wiley, 2006, 224, pp.38-41. ⟨hal-00138660⟩
  • H. Xu, E. Lampin, Emmanuel Dubois, S. Bardy, F. Murray. Impact of large angle tilt implantation on the threshold voltages of LDMOS transistors on SOI. Materials Science and Engineering: B, Elsevier, 2005, 124-125, pp.323-326. ⟨hal-00138396⟩
  • G. Larrieu, Emmanuel Dubois. Reactive ion etching of a 20 nanometers tungsten gate using a SF6/N2 chemistry and hydrogen silsesquioxane hard mask resist. Journal of Vacuum Science and Technology B, 2005, 23, pp.2046-2050. ⟨hal-00125635⟩
  • G. Larrieu, Emmanuel Dubois. Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2005, 52, pp.2720-2726. ⟨hal-00138397⟩
  • A. Laszcz, J. Katcki, J. Ratajczak, G. Larrieu, Emmanuel Dubois, et al.. Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain. Journal of Alloys and Compounds, Elsevier, 2004, 382, pp.24-28. ⟨hal-00140977⟩
  • G. Larrieu, Emmanuel Dubois. Ideal subthreshold characteristics of thin-film SOI p-MOSFETs with Schottky source/drain and a midgap tungsten gate. IEE Proceedings Microwaves Antennas and Propagation, Institution of Engineering and Technology, 2004, 25, pp.801-803. ⟨hal-00140978⟩
  • Emmanuel Dubois, G. Larrieu. Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors (MOSFETs). Journal of Applied Physics, American Institute of Physics, 2004, 96, pp.729-737. ⟨hal-00140973⟩
  • G. Larrieu, Emmanuel Dubois. Schottky-barrier source/drain MOSFETs on ultra-thin silicon-on-insulator body with a tungsten metallic midgap gate. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2004, 25, pp.801-803. ⟨hal-00140981⟩
  • G. Larrieu, Emmanuel Dubois, X. Wallart, X. Baie, J. Katcki. Formation of Pt-based silicide contacts : kinetics, stochiometry and current drive capabilities. Journal of Applied Physics, American Institute of Physics, 2003, 94 (12), pp.7801-7810. ⟨10.1063/1.1605817⟩. ⟨hal-00146394⟩
  • E. Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray. Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2003, 50, pp.1401-1404. ⟨hal-00146392⟩
  • Xing Tang, J. Katcki, Emmanuel Dubois, N. Reckinger, J. Ratajczak, et al.. Very low Schottky barrier to n-type silicon with PtEr-stack silicide. Solid-State Electronics, Elsevier, 2003, 47, pp.2105-2111. ⟨hal-00146401⟩
  • Emmanuel Dubois, G. Larrieu. Low Schottky barrier source/drain for advanced MOS architecture : device design and material consideration. Solid-State Electronics, Elsevier, 2002, 46, pp.997-1004. ⟨hal-00148735⟩
  • Emmanuel Dubois. From nanoelectronics to nanotechnology. Belgian Journal of Electronics & Communications HF, 2002, 3, pp.9-16. ⟨hal-00250387⟩
  • Emmanuel Dubois, E. Robilliart. Non-quasi-static transient model of fully-depleted SOI MOSFET and its application to the analysis of charge sharing in an analog switch. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2002, 23, pp.43-45. ⟨hal-00148743⟩
  • Emmanuel Dubois, J.L. Bubendorff. Kinetics of oxydation by scanning probe microscopy : a space-charge-limited model. Journal of Applied Physics, American Institute of Physics, 2000, 87, pp.8148-8154. ⟨hal-00158510⟩
  • Emmanuel Dubois, J.-L. Coppee, B. Baccus, D. Collard. ELECTRICAL PERFORMANCES COMPARISON OF SEMI AND FULLY RECESSED ISOLATION STRUCTURES. Journal de Physique Colloques, 1988, 49 (C4), pp.C4-813-C4-816. ⟨10.1051/jphyscol:19884171⟩. ⟨jpa-00227913⟩

Conference papers126 documents

  • Daniel Hallatt, Hugues Leroux, Emmanuel Dubois, Flavie Braud. Exploring the response of Ryugu-inspired phyllosilicates to a pulsed laser. 53rd Lunar and Planetary Science Conference, Mar 2022, Texas, United States. ⟨hal-03664443⟩
  • Victor Fiorese, Joao Carlos, Azevedo Goncalves, Simon Bouvot, Emmanuel Dubois, et al.. A 140 GHz to 170 GHz active tunable noise source development in SiGe BiCMOS 55 nm technology. 16th European Microwave Integrated Circuits Conference (EuMIC 2021) Session EuMIC08 - Components and Subsystems for 100 GHz and Above, Apr 2022, Londres, United Kingdom. pp.125-128, ⟨10.23919/EuMIC50153.2022.9783645⟩. ⟨hal-03637553⟩
  • Emmanuel Dubois, A. Bhaskar, J.M. Boucaud, A. Alves, C. Belem, et al.. Functional packaging of RF, mmW and photonic functions based on femtosecond laser micromachining. 19th International Nanotech Symposium NANO KOREA 2021, TS10-Nanofabrication & Measurements, Jul 2021, Seoul, South Korea. ⟨hal-03582878⟩
  • Victor Fiorese, F. Laporte, J.F. Caillet, G. Catalano, F. Gianesello, et al.. 220 GHz E-Plane Transition from Waveguide to Suspended Stripline Integrated on Industrial Organic Laminate Substrate Technology. European Microwave Conference, EuMC 2021, Session EuMC06 - 3D to 2D Transitions and New Materials for mmWave system Integration, EuMIC/EuMC/EuMW, Apr 2021, London, United Kingdom. pp.99-102, ⟨10.23919/EuMC50147.2022.9784166⟩. ⟨hal-03637651⟩
  • Emmanuel Dubois. [Invité] Packaging fonctionnel de fonctions RF, mmW et photonique basé sur le micro-usinage laser. 9eme Conférence plénière du GdR Ondes, GDR ONDES 2451, Nov 2021, Villeneuve d'Ascq, France. ⟨hal-03741454⟩
  • Stephane Monfray, Sébastien Cremer, Nathalie Vulliet, Emmanuel Dubois, Florian Domengie, et al.. Optimization of deep rib high speed phase modulators on 300mm industrial Si-photonics platform. SPIE Photonics Europe, Conference 11364 - Applications of Photonic Technology - Integrated Photonics Platforms: Fundamental Research, Manufacturing and Applications, Apr 2020, Strasbourg, France. 1136403, 8 p., ⟨10.1117/12.2554725⟩. ⟨hal-03092725⟩
  • Victor Fiorese, Cybelle Belem-Gonçalves, C del Rio Boccio, D. Titz, Frederic Gianessello, et al.. Evaluation of micro laser sintering metal 3D-printing technology for the development of waveguide passive devices up to 325 GHz. IEEE/MTT-S International Microwave Symposium, IMS 2020, Aug 2020, Los Angeles, United States. pp.1168-1171, ⟨10.1109/IMS30576.2020.9224102⟩. ⟨hal-03091222⟩
  • Arun Bhaskar, Justine Philippe, Flavie Braud, Etienne Okada, J.F. Robillard, et al.. Femtosecond laser micromachining of crystalline silicon for ablation of deep macro-sized cavities for silicon-on-insulator applications. SPIE Photonics West, Conference 10906 - Laser-based Micro- and Nanoprocessing XIII, Feb 2019, San Francisco, United States. 109060K, 13 p., ⟨10.1117/12.2507652⟩. ⟨hal-02317233⟩
  • Sergey Mitryukovskiy, Melanie Lavancier, Flavie Braud, Yue Bai, Emmanuel Dubois, et al.. Towards broadband THz spectroscopy and analysis of sub-wavelength-size biological samples. IRMMW-THz 2019, Sep 2019, Paris, France. ⟨10.1109/IRMMW-THz.2019.8874409⟩. ⟨hal-02886507⟩
  • Sergey I. Mitryukovskiy, Melanie Lavancier, Flavie Braud, Goedele Roos, Theo Hannotte, et al.. Shining the light to terahertz spectroscopy of nL-volume biological samples. CLEO (The Conference on Lasers and Electro-Optics Conference) 2019, May 2019, San Jose, United States. paper ATu3K.6, 2 p., ⟨10.1364/CLEO_AT.2019.ATu3K.6⟩. ⟨hal-02158865⟩
  • Stanislav Didenko, Tierno M'Bah, Antonin Massoud, Valeria Lacatena, Maciej Haras, et al.. Artificially-induced anisotropic heat flow in 2D patterned membranes. Eurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland. ⟨hal-02025449⟩
  • Q. Hivin, J-M. Boucaud, Flavie Braud, C. Durand, F. Gianesello, et al.. Femtosecond pulsed laser for advanced photonic packaging. 7th Electronic System-Integration Technology Conference, ESTC 2018, Sep 2018, Dresden, Germany. ⟨10.1109/ESTC.2018.8546374⟩. ⟨hal-01961743⟩
  • J.F. Robillard, Tierno M'Bah, Stanislav Didenko, T. Zhu, D. Zhou, et al.. Demonstration of low-thermal conductivity silicon nano-patterned membranes as a thermoelectric material. Eurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland. ⟨hal-02025459⟩
  • A.M. Massoud, Bluet J.M., Regis Orobtchouk, Valeria Lacatena, Maciej Haras, et al.. Phonon heat conduction in phononic crystal membranes. 18th IEEE International Conference on Nanotechnology, IEEE Nano 2018, Session on “nanophononics”, Jul 2018, Cork, Ireland. ⟨hal-01932516⟩
  • J.M. Boucaud, Q. Hivin, C. Durand, F. Gianesello, Davide Bucci, et al.. Single mode polymer optical waveguides and out-of-plane coupling structure on a glass substrate. 7th Electronic System-Integration Technology Conference, ESTC 2018, Sep 2018, Dresden, Germany. ⟨10.1109/ESTC.2018.8546461⟩. ⟨hal-01961666⟩
  • Thierno-Moussa Bah, Stanjen Didenko, Stéphane Monfray, Thomas Skotnicki, Emmanuel Dubois, et al.. Performance evaluation of silicon based thermoelectric generators interest of coupling low thermal conductivity thin films and a planar architecture. 48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, Germany. pp.226-229, ⟨10.1109/ESSDERC.2018.8486919⟩. ⟨hal-02317293⟩
  • A.M. Massoud, Bluet J.M., Regis Orobtchouk, Valeria Lacatena, Maciej Haras, et al.. Phonon heat conduction in phononic crystal membranes. E-MRS Spring Meeting, Symposium "Nanostructures for phononic applications", Jun 2018, Strasbourg, France. ⟨hal-01932523⟩
  • Arun Bhaskar, Justine Philippe, Matthieu Berthomé, Etienne Okada, J.F. Robillard, et al.. Large-area femtosecond laser ablation of Silicon to create membrane with high performance CMOS-SOI RF functions. 2018 7th Electronic System-Integration Technology Conference (ESTC), Sep 2018, Dresden, Germany. pp.801-806, ⟨10.1109/ESTC.2018.8546407⟩. ⟨hal-02317259⟩
  • Romain Peretti, Sergey I. Mitryukovskiy, Flavie Braud, Emilien Peytavit, Emmanuel Dubois, et al.. Device for light-matter interaction enhancement in the full THz range for precise spectroscopy of small volume samples. 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018), Sep 2018, Nagoya, Japan. paper Tu-POS-05, 1-2, ⟨10.1109/IRMMW-THz.2018.8510508⟩. ⟨hal-02317320⟩
  • Stanislav Didenko, Antonin Massoud, Tierno M'Bah, J.F. Robillard, Pierre-Olivier Chapuis, et al.. Thermal conductivity in Si 2D phononic membranes studied by Raman Thermometry,. GDRe Workshop on Thermal Nanosciences and NanoEngineering, Nov 2017, Lille, France. ⟨hal-02030916⟩
  • Julien Borrel, L. Hutin, H. Grampeix, E. Nolot, E. Ghegin, et al.. Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts. IEEE Silicon Nanoelectronics Workshop (SNW), Jun 2016, Honolulu, United States. pp.140-141, ⟨10.1109/SNW.2016.7578022⟩. ⟨hal-03325002⟩
  • S. Didenko, V. Lacatena, M. Haras, J.F. Robillard, P.O. Chapuis, et al.. Thermal conductivity of Si 2D phononic membranes studied by MD simulations and Raman thermometry. Eurotherm 108: Nanoscale and Microscale Heat Transfer V, Sep 2016, Santorini, Greece. ⟨hal-01475281⟩
  • P.-O. Chapuis, M. Massoud, T. Nghiem, J.M. Bluet, V. Lacatena, et al.. Heat conduction in 2D phononic structures. WE-Heraeus-Seminar “Heat Transfer and Heat Conduction on the Nanoscale”, Apr 2016, Bad Honnef, Germany. ⟨hal-01475329⟩
  • Emmanuel Dubois, J. Philippe, M. Berthome, J.F. Robillard, Christophe Gaquière, et al.. Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding. 6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. ⟨10.1109/ESTC.2016.7764513⟩. ⟨hal-03272693⟩
  • M. Massoud, V. Lacatena, M. Haras, S. Didenko, P.O. Chapuis, et al.. Comparative thermal characterization of nanophononic membrane strips by Raman thermometry, scanning thermal microscopy, and an electro-thermal method. Eurotherm 108: Nanoscale and Microscale Heat Transfer V, Sep 2016, Santorini, Greece. ⟨hal-01475299⟩
  • Julien Borrel, Louis Hutin, Helen Grampeix, Emmanuel Nolot, Magali Tessaire, et al.. Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges. IWJT 2016 - 16th International Workshop on Junction Technology, May 2016, Shanghai, China. pp.14-19. ⟨hal-03325000⟩
  • Justine Philippe, Aurelien Lecavelier Des Etangs-Levallois, Philip Latzel, Francois Danneville, J.F. Robillard, et al.. Characterization of flexible CMOS technology tranferred onto a metallic foil. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Jan 2015, Bologna, Italy. ⟨10.1109/ULIS.2015.7063747⟩. ⟨hal-03272691⟩
  • Sofiene Bouaziz, Matthieu Berthomé, J.F. Robillard, Emmanuel Dubois. Ultra-foldable/stretchable wideband RF interconnects using laser ablation of metal film on a flexible substrate. 45th European Microwave Conference (EuMC), Sep 2015, Paris, France. ⟨10.1109/EuMC.2015.7345902⟩. ⟨hal-03325008⟩
  • Justine Philippe, A. Lecavelier, M. Berthome, J.F. Robillard, Christophe Gaquière, et al.. Application-oriented performance of RF CMOS technologies on flexible substrates. IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. ⟨10.1109/IEDM.2015.7409707⟩. ⟨hal-03272696⟩
  • V. Lacatena, M. Haras, J.F. Robillard, T. Skotnicki, Emmanuel Dubois, et al.. Thermal Conductivity Reduction in Fully Suspended and Periodically Patterned Membranes Measured by Electro-Thermal Method. MRS Fall meeting, Symposium II on “Phonons”, Nov 2015, Boston, United States. ⟨hal-01464806⟩
  • Valeria Lacatena, Maciej Haras, J.F. Robillard, Stéphane Monfray, Thomas Skotnicki, et al.. Efficient reduction of thermal conductivity in silicon using phononic-engineered membranes. European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00964542⟩
  • J.F. Robillard, Valeria Lacatena, Maciej Haras, Stéphane Monfray, Thomas Skotnicki, et al.. Silicon thermoelectrics : a non-conventional approach based on thin-film phononic engineering. CMOS Emerging Technologies Research Symposium, 2014, Grenoble, France. ⟨hal-00976631⟩
  • Valeria Lacatena, Maciej Haras, J.F. Robillard, Stéphane Monfray, Thomas Skotnicki, et al.. Phononic crystals patterning by e-beam lithography "dots on the fly" methodology for integration into thermoelectric energy converters. 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020281⟩
  • Maciej Haras, V. Lacatena, François Morini, J.F. Robillard, S. Monfray, et al.. Fabrication of integrated micrometer platform for thermoelectric measurements. 60th Annual IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. paper 8.5, 8.5.1-8.5.4, ⟨10.1109/IEDM.2014.7047012⟩. ⟨hal-03325009⟩
  • Justine Philippe, Emmanuel Dubois, Francois Danneville, Daniel Gloria. Intégration hétérogène de systèmes communicants CMOS-SOI en gamme millimétrique. Doctoriales Lille Nord de France 2014, 2014, Marcq-en-Baroeul, France. ⟨hal-01005696⟩
  • Julien Borrel, Louis Hutin, Magali Grégoire, Fabrice Nemouchi, Olivier Rozeau, et al.. Nouvelle technologie de contact pour CMOS FD-SOI 10nm et en deçà le contact dipolaire. 17es Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01020275⟩
  • Maciej Haras, Valeria Lacatena, Stéphane Monfray, J.F. Robillard, Thomas Skotnicki, et al.. Integrated measurement platform for thermal conductivity measurements in thin-film crystalline silicon and silicon-germanium. European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium BB - Materials by design for energy applications through theory and experiment, 2014, Lille, France. ⟨hal-00964577⟩
  • François Morini, J.F. Robillard, Stéphane Monfray, I.D. Baikie, Thomas Skotnicki, et al.. Synthesis and electrical characterisations of a low work function cesium oxide coating for high efficiency thermionic energy converter. European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium BB - Materials by design for energy applications through theory and experiment, 2014, Lille, France. ⟨hal-00966136⟩
  • Justine Philippe, Aurélien Lecavelier, Francois Danneville, Daniel Gloria, Emmanuel Dubois. Intégration hétérogène de systèmes communicants CMOS-SOI en gamme millimétrique. 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01020278⟩
  • Emmanuel Dubois, Aurélien Lecavelier Des Etangs-Levallois, Justine Philippe, Sylvie Lepilliet, Francois Danneville, et al.. High performance CMOS with enhanced property of mechanical flexibility. CMOS Emerging Technologies Research Symposium, 2014, Grenoble, France. ⟨hal-00976625⟩
  • V. Lacatena, M. Haras, J.F. Robillard, S. Monfray, T. Skotnicki, et al.. Phononic engineering of silicon using dots on the fly 'electron beam lithography and plasma etching'. 39th International Conference on Micro and Nano Engineering, MNE 2013, 2013, London, United Kingdom. ⟨hal-00878809⟩
  • François Morini, Emmanuel Dubois, J.F. Robillard, S. Monfray, T. Skotnicki. Low work function thin film growth for high efficiency thermionic energy converter : coupled Kelvin probe and photoemission study of potassium oxide. European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium C - Advanced thermoelectrics : from materials to devices, 2013, Strasbourg, France. ⟨hal-00819702⟩
  • Emmanuel Dubois. [Invited] SOI technologies for high-performance flexible electronics. Joint 7th International Workshop ''Functional Nanomaterials and Devices'' and 2nd Ukrainian-French Seminar ''Semiconductor-on-insulator materials, devices and circuits : physics, technology & diagnostic'', 2013, Kyiv, Ukraine. ⟨hal-00819468⟩
  • H. Niebojewski, C. Le Royer, Y. Morand, O. Rozeau, M.A. Jaud, et al.. Self-aligned contacts for 10nm FDSOI node : from device to circuit evaluation. 39th IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, IEEE S3S 2013, 2013, Monterey, CA, United States. paper 6a.4, 2 p., ⟨10.1109/S3S.2013.6716549⟩. ⟨hal-00955675⟩
  • H. Niebojewski, C. Le Royer, Y. Morand, M.A. Jaud, O. Rozeau, et al.. Extra-low parasitic gate-to-contacts capacitance architecture for sub-14nm transistor nodes. 9th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2013, 2013, Paris, France. ⟨hal-00878810⟩
  • Patrice Raveneau, Emmanuel Chaput, Riadh Dhaou, Emmanuel Dubois, Patrick Gelard, et al.. Carreau: CARrier REsource Access for mUle, DTN applied to hybrid WSN / satellite system. IEEE Vehicular Technology Conference - VTC 2013, Sep 2013, Las Vegas, United States. pp. 1-5. ⟨hal-01148365⟩
  • J.P. Simonato, L. Ordronneau, A. Carella, V. Passi, Emmanuel Dubois, et al.. Detection of neurotoxic gases by functionalized silicon nanowire field-effect transistors. ImagieNano Conference, Security & Defense, NanoSD 2013, 2013, Bilbao, Spain. ⟨hal-00811786⟩
  • A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Marie Lesecq, Francois Danneville, Y. Tagro, et al.. Radio frequency and low noise characteristics of SOI technology on plastic for flexible electronics. 8th European Workshop on Silicon on Insulator Technology, Devices and Circuits, EuroSOI 2012, 2012, Montpellier, France. pp.73-78, ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00797713⟩
  • A. Lecavelier Des Etangs-Levallois, V. Passi, Z.K. Chen, François Morini, Emmanuel Dubois. Characterization of PtSi nanowires transferred onto organic film. 38th International Micro & Nano Engineering Conference, MNE 2012, 2012, Toulouse, France. ⟨hal-00797774⟩
  • A. Carella, S. Clavaguera, C. Celle, S. Lenfant, D. Vuillaume, et al.. Electrical nerve agents sensors based on chemically functionalized nanomaterials. NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, 2012, Santa Clara, CA, United States. pp.130-132. ⟨hal-00801097⟩
  • V. Passi, A. Lecavelier Des Etangs-Levallois, Z.K. Chen, François Morini, Emmanuel Dubois. Room temperature process for direct writing of nanostructures on plastic. 38th International Micro & Nano Engineering Conference, MNE 2012, 2012, Toulouse, France. ⟨hal-00797783⟩
  • Y. Tagro, A. Lecavelier Des Etangs-Levallois, L. Poulain, Sylvie Lepilliet, D. Gloria, et al.. High frequency noise potentialities of reported CMOS 65 nm SOI technology on flexible substrate. 12th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems, SiRF 2012, 2012, Santa Clara, CA, United States. pp.89-92, ⟨10.1109/SiRF.2012.6160147⟩. ⟨hal-00801054⟩
  • N. Clement, G. Larrieu, Emmanuel Dubois. Low-frequency noise in Schottky barriers based nanoscale field-effect transistors. Materials Research Society Spring Meeting, MRS Spring 2012, Symposium D : Nanocontacts - Emerging Materials and Processing for Ohmicity and Rectification, 2012, San Francisco, CA, United States. ⟨hal-00797702⟩
  • L. Silvestri, S. Reggiani, V. Passi, F. Ravaux, Emmanuel Dubois, et al.. TCAD study of the detection mechanisms in silicon nanoribbon-based gas sensors. 41st European Solid-State Device Research Conference, ESSDERC 2011, 2011, Helsinki, Finland. paper ID 5173, 131-134. ⟨hal-00800024⟩
  • J.P. Simonato, A. Carella, S. Clavaguera, M. Delalande, S. Lenfant, et al.. Innovative electrical sensors for highly toxic gases based on carbon nanotubes and silicon nanowires. Materials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Semiconductor nanowires for photovoltaics, 2011, Boston, MA, United States. ⟨hal-00807191⟩
  • François Morini, Emmanuel Dubois, T. Skotnicki, S. Monfray. Principe alternatif de conversion thermoélectrique : nouveaux matériaux à faible travail d'extraction. 14èmes Journées Nationales du Réseau Doctoral de Micro et Nanoélectronique, JNRDM 2011, 2011, Cachan, France. pp.1-4. ⟨hal-00806677⟩
  • Aurélie Lecestre, Emmanuel Dubois, A. Villaret, P. Coronel, T. Skotnicki, et al.. Synthesis and characterization of crystalline silicon ribbons on insulator using catalytic Vapor-Liquid-Solid growth inside a cavity. 6th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2010, 2010, France. pp.99-100. ⟨hal-00549974⟩
  • X.L. Han, G. Larrieu, Emmanuel Dubois. Fabrication and electrical characterization of dense vertical Si nanowires arrays. European Materials Research Society Spring Meeting, E-MRS Spring 2010, Symposium P : Science and technology of nanotubes, nanowires and graphene, 2010, Strasbourg, France. ⟨hal-00574100⟩
  • V. Passi, J.P. Raskin, F. Ravaux, Emmanuel Dubois. Backgate bias and stress level impact on giant piezoresistance effect in thin silicon films and nanowires. 23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010, 2010, China. pp.464-467, ⟨10.1109/MEMSYS.2010.5442464⟩. ⟨hal-00549973⟩
  • A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Francois Danneville, D. Gloria, C. Raynaud. Report hétérogène de dispositifs et circuits CMOS RF sur substrat souple. 13èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2010, 2010, France. pp.CD-ROM, Session Systèmes hautes fréquences, 1-4. ⟨hal-00573208⟩
  • Emmanuel Dubois, G. Larrieu, N. Breil, R. Valentin, Francois Danneville, et al.. Metallic source/drain architecture for advanced MOS technology : an overview of METAMOS results. 8th Symposium Diagnostics & Yield : Advanced Silicon Devices and Technologies for ULSI Era, 2009, Warsaw, Poland. ⟨hal-00575696⟩
  • Emmanuel Dubois, G. Larrieu, N. Breil, R. Valentin, Francois Danneville, et al.. Metallic source/drain for advanced MOS architectures : from material engineering to device integration. SINANO-NANOSIL Workshop, Silicon-based CMOS and Beyond-CMOS Nanodevices, 2009, Athens, Greece. ⟨hal-00575267⟩
  • Emmanuel Dubois, Véronique Souchère, Olivier Barreteau. A conceptual agent-based model to explore biases in a role playing game outcomes, "Learn to game, game to learn". 40. Annual Conference of the International Simulation And Gaming Association, ISAGA 2009, International Simulation And Gaming Association (ISAGA). Delft, NLD., Jun 2009, Singapour, Singapore. 10 p. ⟨hal-02824111⟩
  • Xing Tang, F. Ravaux, Emmanuel Dubois, E. Kasper, K. Alim, et al.. Self-aligned single-electron memory fabrication based on Si/SiGe/Si heterostructures. 35th International Conference on Micro & Nano Engineering, MNE 2009, 2009, Ghent, Belgium. ⟨hal-00575272⟩
  • V. Passi, Aurélie Lecestre, Emmanuel Dubois, J.P. Raskin. Selective etching of implanted silicon dioxide in hydrofluoric acid. 34th International Conference on Micro and Nano Engineering, MNE 2008, 2008, Athens, Greece. ⟨hal-00361548⟩
  • N. Breil, A. Halimaoui, Emmanuel Dubois, E. Lampin, L. Godet, et al.. Investigation on the platinum silicide Schottky barrier height modulation using a dopant segregation approach. Materials Research Society Spring Meeting, MRS Spring 2008, Symposium E : Doping Engineering for Front-End Processing, 2008, United States. pp.85-90. ⟨hal-00360805⟩
  • A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, V. Srot, et al.. Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/SiO2/Si structure. European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, Strasbourg, France. ⟨hal-00361547⟩
  • F. Balestra, E. Parker, D. Leadley, S. Mantl, Emmanuel Dubois, et al.. NANOSIL Network of Excellence : silicon-based nanostructures and nanodevices for long-term nanoelectronics applications. European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, Strasbourg, France. ⟨hal-00361546⟩
  • Aurélie Lecestre, Emmanuel Dubois, A. Villaret, P. Coronel, T. Skotnicki. Localized and oriented catalytic growth of crystalline silicon nanoribbons. Journées Nationales sur les Technologies Emergentes en Micro-nanofabrication, JNTE 08, 2008, Toulouse, France. ⟨hal-00361549⟩
  • J. Ratajczak, A. Laszcz, A. Czerwinski, J. Katcki, F. Phillipp, et al.. Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications. XIII International Conference on Electron Microscopy, EM'2008, 2008, Cracow-Zakopane, Poland. ⟨hal-00361544⟩
  • Dmitri Yarekha, G. Larrieu, Emmanuel Dubois, S. Godey, X. Wallart, et al.. Investigation of the ytterbium silicide as low Schottky barrier source/drain contact material for n-type MOSFET. Journées Nationales sur les Technologies Emergentes en Micro-nanofabrication, JNTE 08, 2008, Toulouse, France. ⟨hal-00361550⟩
  • Emmanuel Dubois, G. Larrieu, N. Breil, R. Valentin, Francois Danneville, et al.. Recent advances in metallic source/drain MOSFETs. 8th International Workshop on Junction Technology, IWJT'08, 2008, Shanghai, China. pp.139-144, ⟨10.1109/IWJT.2008.4540035⟩. ⟨hal-00800974⟩
  • F. Balestra, E. Parker, D. Leadley, S. Mantl, Emmanuel Dubois, et al.. NANOSIL Network of Excellence: Silicon-based nanostructures and nanodevices for long-term nanoelectronics applications. European Materials Research Society (E-MRS 2008), Symposium, May 2008, Strasbourg, France. ⟨hal-00391849⟩
  • G. Larrieu, Emmanuel Dubois, Dmitri Yarekha, N. Breil, N. Reckinger, et al.. Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance. European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, _, France. ⟨hal-00361543⟩
  • J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, N. Reckinger, et al.. Electron microscopy of silicides formation in Schottky barrier contacts to electronic devices. XIII International Conference on Electron Microscopy, EM'2008, 2008, Cracow-Zakopane, Poland. ⟨hal-00361545⟩
  • Aurélie Lecestre, Emmanuel Dubois, A. Villaret, P. Coronel, T. Skotnicki. Confined and guided catalytic growth of crystalline silicon films on a dielectric substrate. ESS-Fringe Poster Session of 2008 European Solid-State Device Research Conference, ESSDERC 2008, 2008, Edinburgh, Scotland, United Kingdom. ⟨hal-00361551⟩
  • N. Breil, A. Halimaoui, Emmanuel Dubois, G. Larrieu, J. Ratajczak, et al.. An original selective etch of Pt vs PtSi using a low temperature germanidation process. Proceedings of the 211th Electrochemical Society Meeting, 2007, Chicago, IL, United States. ⟨hal-00367361⟩
  • F. Cornu-Fruleux, J. Penaud, Emmanuel Dubois, P. Coronel, G. Larrieu, et al.. Dual silicide integration of low Schottky-barrier source-drain in a spacer-first damascene-metal-gate FinFET architecture. Proceedings of the 12th Silicon Nanoelectronics Workshop, SNW 2007, 2007, Kyoto, Japan. ⟨hal-00367364⟩
  • Emmanuel Dubois, G. Larrieu, N. Breil, M. Ostling, P.E. Hellström, et al.. Metallic source/drain architecture : status and prospects. SINANO-ESSDERC Workshop, 2007, Munich, Germany. ⟨hal-00367349⟩
  • Francois Danneville, R. Valentin, Emmanuel Dubois, Gilles Dambrine. High frequency figures of merit of conventional and Schottky barrier MOSFETs. 4th International Symposium on System Construction of Global-Network-Oriented Information Electronics, 2007, Sendai, Japan. pp.412-417. ⟨hal-00286235⟩
  • R. Valentin, Emmanuel Dubois, J.P. Raskin, Gilles Dambrine, G. Larrieu, et al.. Investigations of high frequency performance of Schottky-barrier MOSFETs. 7th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2007, 2007, United States. pp.32-35, ⟨10.1109/SMIC.2007.322762⟩. ⟨hal-00284381⟩
  • N. Breil, Emmanuel Dubois, Y. Morand, V. Carron, A. Halimaoui, et al.. Erbium silicide formation under ultra high vacuum. Proceedings of the 16th European Workshop on Materials for Advanced Metallization, MAM 2007, 2007, Bruges, Belgium. ⟨hal-00367362⟩
  • A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, N. Breil, et al.. TEM study of the silicidation process in Pt/Si and Ir/Si structures. Proceedings of the 15th International Conference on Microscopy of Semiconducting Materials, MSMXV, 2007, Cambridge, United Kingdom. ⟨hal-00367363⟩
  • N. Breil, Emmanuel Dubois, A. Pouydebasque, T. Skotnicki. Impact of n-type channel implantation on performance of p-type Schottky barrier MOSFETs. Proceedings of the 12th Silicon Nanoelectronics Workshop, SNW 2007, 2007, Kyoto, Japan. ⟨hal-00367365⟩
  • G. Larrieu, Emmanuel Dubois, R. Valentin, N. Breil, Francois Danneville, et al.. Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETs. IEEE International Electron Devices Meeting, IEDM 2007, 2007, United States. pp.147-150, ⟨10.1109/IEDM.2007.4418886⟩. ⟨hal-00284387⟩
  • Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, et al.. Room temperature single-electron operation and fabrication of downscaled self-aligned single-dot memory devices. Materials Research Society Spring Meeting, MRS Spring 2006, 2006, San Francisco, CA, United States. ⟨hal-00244026⟩
  • G. Larrieu, Emmanuel Dubois, X. Wallart, J. Katcki. Iridium silicide : a promising electrode for metallic source/drain in decananometer MOSFETs. 2006, pp.123. ⟨hal-00138682⟩
  • Christophe Krzeminski, Emmanuel Dubois. Large optimisation of source/drain architecture in double gate CMOS using combined static and transient analysis. Materials Research Society Spring Meeting, MRS Spring 2006, Transistor Scaling - Methods, Materials, and Modeling, 2006, Moscone West, San-Franscico, CA, United States. ⟨hal-00138694⟩
  • C. Charbuillet, S. Monfray, Emmanuel Dubois, P. Bouillon, T. Skotnicki. High current drive in ultra-short impact ionization MOS (I-MOS) devices. 2006, paper 6.2. ⟨hal-00138690⟩
  • Emmanuel Dubois, G. Larrieu. Integration and performance of Schottky junction SOI devices. 6th International Workshop on Junction Technology, IWJT-2006, 2006, Shanghai, China. ⟨hal-00138707⟩
  • A. Łaszcz, J. Katcki, J. Ratajczak, A. Czerwinski, N. Breil, et al.. TEM study of PtSi contact layers for accumulated low Schottky barrier MOSFET. 2006, pp.U/PI.24. ⟨hal-00138674⟩
  • Emmanuel Dubois, G. Larrieu. 40 nm PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate. 7th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for ULSI Era, 2006, Warsaw, Poland. ⟨hal-00138697⟩
  • R. Valentin, A. Siligaris, G. Pailloncy, Emmanuel Dubois, Gilles Dambrine, et al.. Influence of gate offset spacer width on SOI MOSFETs HF properties. 2006, pp.77-80. ⟨hal-00126800⟩
  • C. Charbuillet, Emmanuel Dubois, S. Monfray, P. Bouillon, T. Skotnicki. Fabrication and analysis of CMOS fully-compatible high conductance impact-ionization MOS (I-MOS) transistors. 2006, pp.299-302. ⟨hal-00138680⟩
  • A. Łaszcz, J. Katcki, J. Ratajczak, Xing Tang, Emmanuel Dubois. Transmission electron microscopy study of erbium silicide formation using a Pt/Er stack on a thin silicon-on-insulator substrate. Proceedings of the XII International Conference on Electron Microscopy of Solids, EM'2005, 2005, Kazimierz Dolny, Poland. ⟨hal-00139246⟩
  • H. Xu, E. Lampin, Emmanuel Dubois, F. Murray, S. Bardy. Impact of large angle tilt implantation on the threshold voltages of LDMOS transistor on SOI. 2005, pp.D-VI.08. ⟨hal-00138400⟩
  • A. Laszcz, J. Katcki, J. Ratajczak, A. Czerwinski, Emmanuel Dubois, et al.. TEM characterisation of accumulation low Schottky barrier MOSFET with PtSi contacts. School on Materials Science and Electron Microscopy, Microscopy of Tomorrow's Industrial Materials, 2005, Berlin, Germany. ⟨hal-00138408⟩
  • Emmanuel Dubois, G. Larrieu, N. Breil, Xing Tang, N. Recklinger, et al.. Schottky-barrier source-drain architecture for ultimate CMOS. SINANO Workshop, 2005, Grenoble, France. ⟨hal-00138409⟩
  • Xing Tang, N. Reckinger, V. Bayot, Emmanuel Dubois, Christophe Krzeminski, et al.. Self-aligned single-electron memories SASEM project (IST-2001-32674). 15th NID Workshop - Plenary Meeting, 2005, Madrid, Spain. ⟨hal-00138410⟩
  • F. Fruleux, J. Penaud, Emmanuel Dubois, M. Francois, M. Muller. Optimisation of HSQ e-beam lithography for the patterning of FinFET transistors. 2005, pp.9C01. ⟨hal-00138404⟩
  • F. Fruleux, J. Penaud, Emmanuel Dubois, M. Francois, M. Muller. An optimal high contrast e-beam lithography process for the patterning of dense fin networks. 2005, pp.A/PII.01. ⟨hal-00138401⟩
  • J. Penaud, F. Fruleux, Emmanuel Dubois. Transformation of hydrogen silsexquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs. 2005, pp.P-P.15. ⟨hal-00138399⟩
  • J. Knock, Emmanuel Dubois, G. Larrieu, Xing Tang, N. Recklinger, et al.. Recent advances in metallic source-drain engineering. SINANO Workshop, 2005, Grenoble, France. ⟨hal-00138411⟩
  • J. Penaud, F. Fruleux, Emmanuel Dubois, G. Larrieu. Advanced and nanometric MOSFET architecture, multiple gate devices and Pi gates. MIGAS International Summer School on Advanced Microelectronics, MIGAS'04, 2004, Autrans, France. ⟨hal-00140995⟩
  • J. Katcki, J. Ratajczak, A. Laszcz, Emmanuel Dubois, G. Larrieu, et al.. Transmission electron microscopy of silicides used in ALSB-SOI MOSFET structure. 2004, pp.479-482. ⟨hal-00147750⟩
  • Christophe Krzeminski, Emmanuel Dubois, Xing Tang, N. Reckinger, A. Crahay, et al.. Optimisation and simulation of an alternative nano-flash memory : the SASEM device. 2004, pp.45-50. ⟨hal-00140991⟩
  • Christophe Krzeminski, Emmanuel Dubois, Xiaohui Tang, Nicolas Reckinger, André Crahay, et al.. Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device. Materials Research Society Fall Meeting, Nov 2004, Boston, United States. pp.D1.6.1. ⟨hal-00603411⟩
  • Christophe Krzeminski, Emmanuel Dubois, Xing Tang, N. Reckinger, A. Crahay, et al.. Simulation et optimisation d'une mémoire flash nanométrique. Journées Nationales Nanoélectronique, 2004, Aussois, France. ⟨hal-00140993⟩
  • Emmanuel Dubois, G. Larrieu. Intégration de source/drain Schottky en technologie MOS décananométrique. Journée Club EEA : Electronique des Dispositifs Ultimes et Innovants, 2004, Fuveau, France. ⟨hal-00141009⟩
  • G. Larrieu, Emmanuel Dubois. Transistor MOSFET Schottky en régime nanométrique. Journées Nationales Nanoélectronique, 2004, Aussois, France. ⟨hal-00140994⟩
  • F. Fruleux, J. Penaud, Emmanuel Dubois, G. Larrieu. FinFET achievement : optimum e-beam lithography to etch dense silicon fins networks. MIGAS International Summer School on Advanced Microelectronics, MIGAS'04, 2004, Autrans, France. ⟨hal-00140996⟩
  • Emmanuel Dubois, Christophe Krzeminski, G. Larrieu, X. Baie, Xing Tang, et al.. Integration of Schottky source/drain in advanced MOS technology : the SODAMOS project. 13th Melari/NID Workshop, 2004, Athens, Greece. ⟨hal-00141008⟩
  • A. Laszcz, J. Katcki, J. Ratajczak, Emmanuel Dubois, G. Larrieu, et al.. Transmission Electron Microscopy analysis of MOSFET structures. School on Materials Science and Electron Microscopy, Emerging Microscopy for Advanced Materials Development-Imaging and Spectroscopy on Atomic Scale, 2004, Berlin, Germany. ⟨hal-00140997⟩
  • J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, Emmanuel Dubois, et al.. Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structures. Conference on Microscopy of Semiconducting Materials, 2003, United Kingdom. pp.479-482. ⟨hal-00250182⟩
  • J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, Emmanuel Dubois, et al.. Electron microscopy analysis of MOSFET structures. 2003, pp.67-70. ⟨hal-00146402⟩
  • Xing Tang, J. Katcki, Emmanuel Dubois, J. Ratajczak, G. Larrieu, et al.. Very low Schottky barrier to n-type silicon with PtEr-stack silicide. 2003, pp.99-104. ⟨hal-00146416⟩
  • G. Larrieu, Emmanuel Dubois, X. Wallart. Performance of Pt-based low Schottky barrier silicide contacts on weakly doped silicon. 2003, pp.D791-D796. ⟨hal-00146405⟩
  • Emmanuel Dubois. New Schottky source/drain architectures. Workshop Micro et Nanoélectronique, 2003, Crolles, France. ⟨hal-00146417⟩
  • A. Laszcz, J. Katcki, J. Ratajczak, G. Larrieu, Emmanuel Dubois, et al.. Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain. European Materials Research Society Fall Meeting, 2003, Warsaw, Poland. ⟨hal-00146424⟩
  • Emmanuel Dubois, G. Larrieu. Low Schottky barrier source/drain for advanced MOS architecture : device, design and material consideration. 2001, pp.53-56. ⟨hal-00152233⟩
  • Emmanuel Dubois, G. Larrieu. Advanced source/drain architecture using very low Schottky barriers : device design and material engineering. 2001, pp.203-206. ⟨hal-00152202⟩
  • Emmanuel Dubois, K. Suzuki, E. Lampin. Power LDMOS design using an SOI RESURF architecture : on state / breakdown voltage trade-off. Franco-Swedish Workshop on SOI, 2001, Grenoble, France. ⟨hal-00152238⟩
  • Emmanuel Dubois, G. Larrieu. Low Schottky barrier source/drain for advanced MOS architecture. Franco-Swedish Workshop on SOI, 2001, Grenoble, France. ⟨hal-00152239⟩
  • Emmanuel Dubois. Silicon nanoelectronics. Micro and Nano Workshop, 2001, Louvain La Neuve, Belgium. ⟨hal-00152236⟩
  • Emmanuel Dubois, V. Senez, Gilles Dambrine, A. Kaiser. Intégration silicium à l'IEMN : de l'architecture de composants aux circuits radiofréquences. Journée Thématique de l'ANRT sur l'Intégration, 2000, Paris, France. ⟨hal-00158505⟩
  • Emmanuel Dubois. Mémoires électroniques du futur : évolution de la microélectronique silicium. Fête de la Science, 2000, Lille, France. ⟨hal-00158535⟩

Poster communications1 document

  • Jun Yin, Tianqi Zhu, Di Zhou, Thierno Moussa Bah, Stanislav Didenko, et al.. Nanometer-scale active thermal devices for thermal microscopy probe calibration. 16èmes Journées de La Matière Condensée (JMC2018), Aug 2018, Grenoble, France. pp.513-513. ⟨hal-02023911⟩

Books1 document

  • J Kątcki, J Ratajczak, A Laszcz, F Phillipp, Emmanuel Dubois, et al.. Microscopy of Semiconducting Materials 2003. A. G. Cullis, P. A. Midgley. CRC Press, 4 p., 2018, 9781351074636. ⟨10.1201/9781351074636⟩. ⟨hal-03555261⟩

Book sections4 documents

  • Emmanuel Dubois, Florent Ravaux, Zhenkun Chen, Nicolas Reckinger, Xiaohui Tang, et al.. Schottky source/drain MOSFETs. Deleonibus S. Intelligent integrated systems : technologies, devices and architectures, Pan Stanford Publishing, section 1, chapter 2, 55-96, 2013, 978-9-8144-1142-4. ⟨hal-00878461⟩
  • Aurélie Lecestre, Emmanuel Dubois, A. Villaret, T. Skotnicki, P. Coronel, et al.. Confined and guided vapor-liquid-solid catalytic growth of silicon nanoribbons : from nanowires to structured silicon-on-insulator layers. Nazarov A., Colinge J.P., Balestra F., Raskin J.P., Gamiz F., Lysenko V.S. Semiconductor-on-insulator materials for nanoelectronics applications, Springer Berlin Heidelberg, pp.Part 1, 67-89, 2011, Collection : Chemistry and materials science, Series : Engineering materials, ⟨10.1007/978-3-642-15868-1_4⟩. ⟨hal-00591734⟩
  • Emmanuel Dubois, G. Larrieu, R. Valentin, N. Breil, Francois Danneville. Introduction to Schottky-barrier MOS architectures : concept, challenges, material engineering and device integration. Balestra F. Nanoscale CMOS : innovative materials, modeling and characterization, ISTE-WILEY, Chapitre 5, 157-204, 2010. ⟨hal-00575852⟩
  • Emmanuel Dubois. Les nanotechnologies. Encyclopédie KLEIO, Larousse-Havas, pp.CD-ROM, 2001. ⟨hal-00132071⟩

Patents4 documents

  • S. Monfray, T. Skotnicki, Emmanuel Dubois. Convertisseur d'énergie à effet tunnel. N° de brevet: FR2985851 (A1) 2013-07-19. 2013. ⟨hal-00847262⟩
  • G. Larrieu, Emmanuel Dubois. Procédé de fabrication de transistors MOSFET complémentaires de type P et N, et dispositif électronique comprenant de tels transistors, et processeur comprenant au moins un tel dispositif. N° de brevet: FR2930073 (A1). 2009. ⟨hal-00426616⟩
  • Emmanuel Dubois, F. Fruleux-Cornu, J. Penaud, P. Coronel. Réalisation d'un transistor à effet de champ. N° de brevet: FR2905800 (A1). 2008. ⟨hal-00372049⟩
  • Emmanuel Dubois. Transistor MOS pour circuits à haute densité d'intégration. N° de brevet: FR2805395 (A1). 2001. ⟨hal-00372674⟩

Other publications1 document

  • Emmanuel Dubois. Contributions à la modélisation et à la fabrication de dispositifs silicium avancée. 2005. ⟨hal-00138412⟩

Preprints, Working Papers, ...1 document

  • Arun Bhaskar, Justine Philippe, Etienne Okada, Flavie Braud, J.F. Robillard, et al.. Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing. 2021. ⟨hal-03350081⟩