Emmanuel Dubois
305
Documents
Identifiants chercheurs
emmanuel-dubois-iemn-
0000-0002-0347-010X
- IdRef : 134290291
Présentation
***Emmanuel Dubois*** graduated as an engineer from the Institut Supérieur d’Electronique et du Numérique (ISEN), Lille, France, in 1985 and received the Ph.D. degree from the University of Lille in 1990. He was awarded the IBM Prize for High-Performance Computing in 1990 for his work on parallelizing the IMPACT3 in-house simulation code for transport in semiconductors. In 1992, he was a visiting scientist at the IBM T.J. Watson Research Centre, Yorktown Heights, working on characterization and simulation of submicron SOI-MOSFETs. In 1993, he joined the Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN UMR 8520) where he is currently Director of Research at the Centre National de la Recherche Scientifique, CNRS. He was coordinator of three European Projects focused on near-field-based lithography and Schottky source-drain MOS technologies (FP4-IST-QUEST, FP5-IST-SODAMOS, FP6-IST-METAMOS) and was involved as workpackage/task leader in a series of European projects devoted to ultimate MOS architectures (FP5 SASEM, FP6 SiNANO NoE, FP7 NANOSIL NoE, FP6 NANOCMOS IP, FP6 PULLNANO IP). From 2005 to 2016, he was on the Technical Program Committee of ESSDERC and was TPC member of the VSLI Symposium on Technology (2018-2019-2020). Until 2017, he participated to the nanoelectronics committee of the French Observatory on Micro and Nano Technologies (OMNT). He is currently heading the STMicroelectronics-IEMN Joint Laboratory and coordinates the PIA-EQUIPEX project LEAF on advanced laser-based microfabrication for System Moore integration. His research interests cover advanced source/drain CMOS technology, RF and mmW CMOS/BiCMOS, non-conventional thermal energy harvesting, laser micromachining and functional packaging of compact RF/mmW/photonics subsystems.
**Thèmes de recherche**
**1991-2001: Simulation et modélisation de dispositifs semiconducteurs**
- Développement de code de simulation du transport dans les semiconducteurs (dérive-diffusion, Monte Carlo)
- Optimisation de technologie MOS, bipolaire BiCMOS
**1997-2001: Nanotechnologies basées sur la microscopie champ proche**
- Modélisation de l’oxydation anodique locale assistée par STM/AFM
- Application à la nanolithographie en champ proche
**2000-2016: Architecture, technologie et fabrication de nano-transistors**
- Architectures Source/Drain Schottky en technologie MOS avancée : siliciures à faibles barrières, modélisation, intégration de composants DC et RF
- Cellule mémoire à quelques électrons : auto-alignement du point flottant de stockage de charge
- Architecture MOS-FinFET : procédé technologique spacers-first contournant les limitations de gravure 3D
- Transistors MOS sur film mince cristallin obtenus par croissance catalytique VLS
- Transistors à nanofils pour des applications de capteurs chimiques ultra-sensibles
**2010 → : Principes et technologie de conversion thermoélectrique non conventionnels**
- Structuration phononique pour la réduction de conductivité thermique du silicium
- Micro-convertisseur thermoélectrique en membrane planaire de silicium
**2010 → : Packaging fonctionnel des systèmes intégrés**
- Microstructuration laser en régime femtoseconde (projet EQUIPEX LEAF)
- Electronique CMOS RF/mmW mécaniquement flexible hautes performances
- Performances RF augmentées par micro-usinage localisée du substrat
- Interposeur électro-optique pour communication haut-débit 400Gb/s
- Packaging de fonctions mmW : guide d’onde et source de bruit amplifiée en bande G
- Packaging de sondes actives intégrées en bande millimétrique
- Microcavités pour composants RF-CMOS sur SOI ultra-rapides pour applications 5G et au-delà
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Integrated metrology devices dedicated to transient Harman measurement of silicon nano-meshesWorkshop for Multi-Functional Materials, Université Polytechnique des Hauts-de-France; Université de Mons, Jun 2023, Valenciennes (Nord), France
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Raman thermometry characterization of GeSbTe based phase change materialsXVII Conference on Phonon Scattering in Condensed Matter, Phonons 2023, Jul 2023, Paris, France
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GeTe thermal characterization with 3-omega and Raman thermometry methodsWorkshop for Multi-Functional Materials 2023, Jun 2023, Valenciennes, France. 1 page
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RF Performance of Large Germanium Telluride Switches for Power Application18th European Microwave Integrated Circuits Conference (EuMIC), Sep 2023, Berlin, Germany
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Silicon Based Suspended Thermometry Device Fabrication for Phonon Ballistic and Coherent Regimes StudyPHONONICS 2023: 6th International Conference on Phononic Crystals/Metamaterials/Metasurfaces, Phonon Transport, and Topological Phononics, Jun 2023, Manchester (UK), United Kingdom
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Improving off-state capacitance of SOI-CMOS RF switches: how good are air microcavities?IEEE 53rd European Solid-State Device Research Conference, ESSDERC, Sep 2023, Lisbon, Portugal. pp.109-112, ⟨10.1109/ESSDERC59256.2023.10268524⟩
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Raman Thermometry Characterization of GeSbTe based Phase Change Materials2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Sep 2022, Dublin, Ireland. pp.1-5, ⟨10.1109/THERMINIC57263.2022.9950662⟩
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A 140 GHz to 170 GHz active tunable noise source development in SiGe BiCMOS 55 nm technology16th European Microwave Integrated Circuits Conference, EuMIC 2021, Apr 2022, London, United Kingdom. pp.125-128, ⟨10.23919/EuMIC50153.2022.9783645⟩
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Suspended crystalline silicon thermometry devices: towards quantum nanophononicsNanoscale and Microscale Heat Transfer VII - Eurotherm, May 2022, Palermo, Italy
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Exploring the response of Ryugu-inspired phyllosilicates to a pulsed laser53rd Lunar and Planetary Science Conference, Mar 2022, Texas, United States
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Integrated metrology devices dedicated to transient Harman measurement of silicon nano-meshesNanoscale and Microscale Heat Transfer VII - Eurotherm, May 2022, Palermo, Italy
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[Invited] Heat transfer in silicon nano-membranes: application to thermoelectricityThe 20th international symposium on the Physics of Semiconductors and Applications (ISPSA20), Jul 2022, Jaeju, South Korea
Communication dans un congrès
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[Invited] Packaging fonctionnel de fonctions RF, mmW et photonique basé sur le micro-usinage laser9eme Conférence plénière du GdR Ondes, GDR ONDES 2451, Nov 2021, Villeneuve d'Ascq, France
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220 GHz E-Plane Transition from Waveguide to Suspended Stripline Integrated on Industrial Organic Laminate Substrate TechnologyEuropean Microwave Conference, EuMC 2021, Session EuMC06 - 3D to 2D Transitions and New Materials for mmWave system Integration, EuMIC/EuMC/EuMW, Apr 2021, London, United Kingdom. pp.99-102, ⟨10.23919/EuMC50147.2022.9784166⟩
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[Invited] Functional packaging of RF, mmW and photonic functions based on femtosecond laser micromachining19th International Nanotech Symposium NANO KOREA 2021, TS10-Nanofabrication & Measurements, Jul 2021, Seoul, South Korea
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Optimization of deep rib high speed phase modulators on 300mm industrial Si-photonics platformSPIE Photonics Europe, Conference 11364 - Applications of Photonic Technology - Integrated Photonics Platforms: Fundamental Research, Manufacturing and Applications, Apr 2020, Strasbourg, France. 1136403, 8 p., ⟨10.1117/12.2554725⟩
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Evaluation of micro laser sintering metal 3D-printing technology for the development of waveguide passive devices up to 325 GHzIEEE/MTT-S International Microwave Symposium, IMS 2020, Aug 2020, Los Angeles, United States. pp.1168-1171, ⟨10.1109/IMS30576.2020.9224102⟩
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Device for broadband THz spectroscopy of 1-nL-volume samples2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. paper Tu-PM2-3-6, 2 p., ⟨10.1109/IRMMW-THz.2019.8874026⟩
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Shining the light to terahertz spectroscopy of nL-volume biological samplesCLEO (The Conference on Lasers and Electro-Optics Conference) 2019, May 2019, San Jose, United States. paper ATu3K.6, 2 p., ⟨10.1364/CLEO_AT.2019.ATu3K.6⟩
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Femtosecond laser micromachining of crystalline silicon for ablation of deep macro-sized cavities for silicon-on-insulator applicationsSPIE Photonics West, Conference 10906 - Laser-based Micro- and Nanoprocessing XIII, Feb 2019, San Francisco, United States. 109060K, 13 p., ⟨10.1117/12.2507652⟩
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Towards broadband THz spectroscopy and analysis of sub-wavelength-size biological samples2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. ⟨10.1109/IRMMW-THz.2019.8874409⟩
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Femtosecond pulsed laser for advanced photonic packaging7th Electronic System-Integration Technology Conference, ESTC 2018, Sep 2018, Dresden, Germany. ⟨10.1109/ESTC.2018.8546374⟩
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Artificially-induced anisotropic heat flow in 2D patterned membranesEurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
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Large-area femtosecond laser ablation of Silicon to create membrane with high performance CMOS-SOI RF functions2018 7th Electronic System-Integration Technology Conference (ESTC), Sep 2018, Dresden, Germany. pp.801-806, ⟨10.1109/ESTC.2018.8546407⟩
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Device for light-matter interaction enhancement in the full THz range for precise spectroscopy of small volume samples2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018), Sep 2018, Nagoya, Japan. paper Tu-POS-05, 1-2, ⟨10.1109/IRMMW-THz.2018.8510508⟩
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Single mode polymer optical waveguides and out-of-plane coupling structure on a glass substrate7th Electronic System-Integration Technology Conference, ESTC 2018, Sep 2018, Dresden, Germany. ⟨10.1109/ESTC.2018.8546461⟩
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Demonstration of low-thermal conductivity silicon nano-patterned membranes as a thermoelectric materialEurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
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[Invited] Phonon heat conduction in phononic crystal membranes18th IEEE International Conference on Nanotechnology, IEEE Nano 2018, Session on “nanophononics”, Jul 2018, Cork, Ireland
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Performance evaluation of silicon based thermoelectric generators interest of coupling low thermal conductivity thin films and a planar architecture48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, Germany. pp.226-229, ⟨10.1109/ESSDERC.2018.8486919⟩
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[Invited] Phonon heat conduction in phononic crystal membranesE-MRS Spring Meeting, Symposium "Nanostructures for phononic applications", Jun 2018, Strasbourg, France
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Thermal conductivity in Si 2D phononic membranes studied by Raman Thermometry,GDRe Workshop on Thermal Nanosciences and NanoEngineering, Nov 2017, Lille, France
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Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contactsIEEE Silicon Nanoelectronics Workshop (SNW), Jun 2016, Honolulu, United States. pp.140-141, ⟨10.1109/SNW.2016.7578022⟩
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Heat conduction in 2D phononic structuresWE-Heraeus-Seminar “Heat Transfer and Heat Conduction on the Nanoscale”, Apr 2016, Bad Honnef, Germany
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Thermal conductivity of Si 2D phononic membranes studied by MD simulations and Raman thermometryEurotherm 108: Nanoscale and Microscale Heat Transfer V, Sep 2016, Santorini, Greece
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Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challengesIWJT 2016 - 16th International Workshop on Junction Technology, May 2016, Shanghai, China. pp.14-19
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Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. ⟨10.1109/ESTC.2016.7764513⟩
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Comparative thermal characterization of nanophononic membrane strips by Raman thermometry, scanning thermal microscopy, and an electro-thermal methodEurotherm 108: Nanoscale and Microscale Heat Transfer V, Sep 2016, Santorini, Greece
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Application-oriented performance of RF CMOS technologies on flexible substratesIEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. ⟨10.1109/IEDM.2015.7409707⟩
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Thermal Conductivity Reduction in Fully Suspended and Periodically Patterned Membranes Measured by Electro-Thermal MethodMRS Fall meeting, Symposium II on “Phonons”, Nov 2015, Boston, United States
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Characterization of flexible CMOS technology tranferred onto a metallic foil2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Jan 2015, Bologna, Italy. ⟨10.1109/ULIS.2015.7063747⟩
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Ultra-foldable/stretchable wideband RF interconnects using laser ablation of metal film on a flexible substrate45th European Microwave Conference (EuMC), Sep 2015, Paris, France. ⟨10.1109/EuMC.2015.7345902⟩
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Synthesis and electrical characterisations of a low work function cesium oxide coating for high efficiency thermionic energy converterEuropean Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium BB - Materials by design for energy applications through theory and experiment, 2014, Lille, France
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Fabrication of integrated micrometer platform for thermoelectric measurements60th Annual IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. paper 8.5, 8.5.1-8.5.4, ⟨10.1109/IEDM.2014.7047012⟩
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Efficient reduction of thermal conductivity in silicon using phononic-engineered membranesEuropean Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France
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Silicon thermoelectrics : a non-conventional approach based on thin-film phononic engineeringCMOS Emerging Technologies Research Symposium, 2014, Grenoble, France
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Phononic crystals patterning by e-beam lithography "dots on the fly" methodology for integration into thermoelectric energy converters17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p
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Intégration hétérogène de systèmes communicants CMOS-SOI en gamme millimétrique17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p
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High performance CMOS with enhanced property of mechanical flexibilityCMOS Emerging Technologies Research Symposium, 2014, Grenoble, France
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Intégration hétérogène de systèmes communicants CMOS-SOI en gamme millimétriqueDoctoriales Lille Nord de France 2014, 2014, Marcq-en-Baroeul, France
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Nouvelle technologie de contact pour CMOS FD-SOI 10nm et en deçà le contact dipolaire17es Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p
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Integrated measurement platform for thermal conductivity measurements in thin-film crystalline silicon and silicon-germaniumEuropean Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium BB - Materials by design for energy applications through theory and experiment, 2014, Lille, France
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[Invited] SOI technologies for high-performance flexible electronicsJoint 7th International Workshop ''Functional Nanomaterials and Devices'' and 2nd Ukrainian-French Seminar ''Semiconductor-on-insulator materials, devices and circuits : physics, technology & diagnostic'', 2013, Kyiv, Ukraine
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Low work function thin film growth for high efficiency thermionic energy converter : coupled Kelvin probe and photoemission study of potassium oxideEuropean Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium C - Advanced thermoelectrics : from materials to devices, 2013, Strasbourg, France
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Detection of neurotoxic gases by functionalized silicon nanowire field-effect transistorsImagieNano Conference, Security & Defense, NanoSD 2013, 2013, Bilbao, Spain
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Phononic engineering of silicon using dots on the fly 'electron beam lithography and plasma etching'39th International Conference on Micro and Nano Engineering, MNE 2013, 2013, London, United Kingdom
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Carreau: CARrier REsource Access for mUle, DTN applied to hybrid WSN / satellite systemIEEE Vehicular Technology Conference - VTC 2013, Sep 2013, Las Vegas, United States. pp. 1-5
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Self-aligned contacts for 10nm FDSOI node : from device to circuit evaluation39th IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, IEEE S3S 2013, 2013, Monterey, CA, United States. paper 6a.4, 2 p., ⟨10.1109/S3S.2013.6716549⟩
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Extra-low parasitic gate-to-contacts capacitance architecture for sub-14nm transistor nodes9th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2013, 2013, Paris, France
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Characterization of PtSi nanowires transferred onto organic film38th International Micro & Nano Engineering Conference, MNE 2012, 2012, Toulouse, France
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Radio frequency and low noise characteristics of SOI technology on plastic for flexible electronics8th European Workshop on Silicon on Insulator Technology, Devices and Circuits, EuroSOI 2012, 2012, Montpellier, France. pp.73-78, ⟨10.1016/j.sse.2013.02.049⟩
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Low-frequency noise in Schottky barriers based nanoscale field-effect transistorsMaterials Research Society Spring Meeting, MRS Spring 2012, Symposium D : Nanocontacts - Emerging Materials and Processing for Ohmicity and Rectification, 2012, San Francisco, CA, United States
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Electrical nerve agents sensors based on chemically functionalized nanomaterialsNSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, 2012, Santa Clara, CA, United States. pp.130-132
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Room temperature process for direct writing of nanostructures on plastic38th International Micro & Nano Engineering Conference, MNE 2012, 2012, Toulouse, France
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High frequency noise potentialities of reported CMOS 65 nm SOI technology on flexible substrate12th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems, SiRF 2012, 2012, Santa Clara, CA, United States. pp.89-92, ⟨10.1109/SiRF.2012.6160147⟩
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TCAD study of the detection mechanisms in silicon nanoribbon-based gas sensors41st European Solid-State Device Research Conference, ESSDERC 2011, 2011, Helsinki, Finland. paper ID 5173, 131-134
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Innovative electrical sensors for highly toxic gases based on carbon nanotubes and silicon nanowiresMaterials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Semiconductor nanowires for photovoltaics, 2011, Boston, MA, United States
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Principe alternatif de conversion thermoélectrique : nouveaux matériaux à faible travail d'extraction14èmes Journées Nationales du Réseau Doctoral de Micro et Nanoélectronique, JNRDM 2011, 2011, Cachan, France. pp.1-4
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Fabrication and electrical characterization of dense vertical Si nanowires arraysEuropean Materials Research Society Spring Meeting, E-MRS Spring 2010, Symposium P : Science and technology of nanotubes, nanowires and graphene, 2010, Strasbourg, France
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Synthesis and characterization of crystalline silicon ribbons on insulator using catalytic Vapor-Liquid-Solid growth inside a cavity6th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2010, 2010, France. pp.99-100
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Backgate bias and stress level impact on giant piezoresistance effect in thin silicon films and nanowires23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010, 2010, China. pp.464-467, ⟨10.1109/MEMSYS.2010.5442464⟩
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Report hétérogène de dispositifs et circuits CMOS RF sur substrat souple13èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2010, 2010, France. pp.CD-ROM, Session Systèmes hautes fréquences, 1-4
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Metallic source/drain for advanced MOS architectures : from material engineering to device integrationSINANO-NANOSIL Workshop, Silicon-based CMOS and Beyond-CMOS Nanodevices, 2009, Athens, Greece
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Metallic source/drain architecture for advanced MOS technology : an overview of METAMOS results8th Symposium Diagnostics & Yield : Advanced Silicon Devices and Technologies for ULSI Era, 2009, Warsaw, Poland
Communication dans un congrès
hal-00575696v1
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Self-aligned single-electron memory fabrication based on Si/SiGe/Si heterostructures35th International Conference on Micro & Nano Engineering, MNE 2009, 2009, Ghent, Belgium
Communication dans un congrès
hal-00575272v1
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A conceptual agent-based model to explore biases in a role playing game outcomes, "Learn to game, game to learn"40. Annual Conference of the International Simulation And Gaming Association, ISAGA 2009, International Simulation And Gaming Association (ISAGA). Delft, NLD., Jun 2009, Singapour, Singapore. 10 p
Communication dans un congrès
hal-02824111v1
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NANOSIL Network of Excellence : silicon-based nanostructures and nanodevices for long-term nanoelectronics applicationsEuropean Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, Strasbourg, France
Communication dans un congrès
hal-00361546v1
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Selective etching of implanted silicon dioxide in hydrofluoric acid34th International Conference on Micro and Nano Engineering, MNE 2008, 2008, Athens, Greece
Communication dans un congrès
hal-00361548v1
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Investigation on the platinum silicide Schottky barrier height modulation using a dopant segregation approachMaterials Research Society Spring Meeting, MRS Spring 2008, Symposium E : Doping Engineering for Front-End Processing, 2008, United States. pp.85-90
Communication dans un congrès
hal-00360805v1
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Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/SiO2/Si structureEuropean Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, Strasbourg, France
Communication dans un congrès
hal-00361547v1
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Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performanceEuropean Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, _, France
Communication dans un congrès
hal-00361543v1
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Electron microscopy of silicides formation in Schottky barrier contacts to electronic devicesXIII International Conference on Electron Microscopy, EM'2008, 2008, Cracow-Zakopane, Poland
Communication dans un congrès
hal-00361545v1
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Confined and guided catalytic growth of crystalline silicon films on a dielectric substrateESS-Fringe Poster Session of 2008 European Solid-State Device Research Conference, ESSDERC 2008, 2008, Edinburgh, Scotland, United Kingdom
Communication dans un congrès
hal-00361551v1
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Investigation of the ytterbium silicide as low Schottky barrier source/drain contact material for n-type MOSFETJournées Nationales sur les Technologies Emergentes en Micro-nanofabrication, JNTE 08, 2008, Toulouse, France
Communication dans un congrès
hal-00361550v1
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Localized and oriented catalytic growth of crystalline silicon nanoribbonsJournées Nationales sur les Technologies Emergentes en Micro-nanofabrication, JNTE 08, 2008, Toulouse, France
Communication dans un congrès
hal-00361549v1
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Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applicationsXIII International Conference on Electron Microscopy, EM'2008, 2008, Cracow-Zakopane, Poland
Communication dans un congrès
hal-00361544v1
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Recent advances in metallic source/drain MOSFETs8th International Workshop on Junction Technology, IWJT'08, 2008, Shanghai, China. pp.139-144, ⟨10.1109/IWJT.2008.4540035⟩
Communication dans un congrès
hal-00800974v1
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NANOSIL Network of Excellence: Silicon-based nanostructures and nanodevices for long-term nanoelectronics applicationsEuropean Materials Research Society (E-MRS 2008), Symposium, May 2008, Strasbourg, France
Communication dans un congrès
hal-00391849v1
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Dual silicide integration of low Schottky-barrier source-drain in a spacer-first damascene-metal-gate FinFET architectureProceedings of the 12th Silicon Nanoelectronics Workshop, SNW 2007, 2007, Kyoto, Japan
Communication dans un congrès
hal-00367364v1
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An original selective etch of Pt vs PtSi using a low temperature germanidation processProceedings of the 211th Electrochemical Society Meeting, 2007, Chicago, IL, United States
Communication dans un congrès
hal-00367361v1
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TEM study of the silicidation process in Pt/Si and Ir/Si structuresProceedings of the 15th International Conference on Microscopy of Semiconducting Materials, MSMXV, 2007, Cambridge, United Kingdom
Communication dans un congrès
hal-00367363v1
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Impact of n-type channel implantation on performance of p-type Schottky barrier MOSFETsProceedings of the 12th Silicon Nanoelectronics Workshop, SNW 2007, 2007, Kyoto, Japan
Communication dans un congrès
hal-00367365v1
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Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETsIEEE International Electron Devices Meeting, IEDM 2007, 2007, United States. pp.147-150, ⟨10.1109/IEDM.2007.4418886⟩
Communication dans un congrès
hal-00284387v1
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High frequency figures of merit of conventional and Schottky barrier MOSFETs4th International Symposium on System Construction of Global-Network-Oriented Information Electronics, 2007, Sendai, Japan. pp.412-417
Communication dans un congrès
hal-00286235v1
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Metallic source/drain architecture : status and prospectsSINANO-ESSDERC Workshop, 2007, Munich, Germany
Communication dans un congrès
hal-00367349v1
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Investigations of high frequency performance of Schottky-barrier MOSFETs7th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2007, 2007, United States. pp.32-35, ⟨10.1109/SMIC.2007.322762⟩
Communication dans un congrès
hal-00284381v1
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Erbium silicide formation under ultra high vacuumProceedings of the 16th European Workshop on Materials for Advanced Metallization, MAM 2007, 2007, Bruges, Belgium
Communication dans un congrès
hal-00367362v1
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Room temperature single-electron operation and fabrication of downscaled self-aligned single-dot memory devicesMaterials Research Society Spring Meeting, MRS Spring 2006, 2006, San Francisco, CA, United States
Communication dans un congrès
hal-00244026v1
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Iridium silicide : a promising electrode for metallic source/drain in decananometer MOSFETs2006, pp.123
Communication dans un congrès
hal-00138682v1
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40 nm PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate7th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for ULSI Era, 2006, Warsaw, Poland
Communication dans un congrès
hal-00138697v1
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Influence of gate offset spacer width on SOI MOSFETs HF properties2006, pp.77-80
Communication dans un congrès
hal-00126800v1
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Fabrication and analysis of CMOS fully-compatible high conductance impact-ionization MOS (I-MOS) transistors2006, pp.299-302
Communication dans un congrès
hal-00138680v1
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Large optimisation of source/drain architecture in double gate CMOS using combined static and transient analysisMaterials Research Society Spring Meeting, MRS Spring 2006, Transistor Scaling - Methods, Materials, and Modeling, 2006, Moscone West, San-Franscico, CA, United States
Communication dans un congrès
hal-00138694v1
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High current drive in ultra-short impact ionization MOS (I-MOS) devices2006, paper 6.2
Communication dans un congrès
hal-00138690v1
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Integration and performance of Schottky junction SOI devices6th International Workshop on Junction Technology, IWJT-2006, 2006, Shanghai, China
Communication dans un congrès
hal-00138707v1
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TEM study of PtSi contact layers for accumulated low Schottky barrier MOSFET2006, pp.U/PI.24
Communication dans un congrès
hal-00138674v1
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Transmission electron microscopy study of erbium silicide formation using a Pt/Er stack on a thin silicon-on-insulator substrateProceedings of the XII International Conference on Electron Microscopy of Solids, EM'2005, 2005, Kazimierz Dolny, Poland
Communication dans un congrès
hal-00139246v1
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Optimisation of HSQ e-beam lithography for the patterning of FinFET transistors2005, pp.9C01
Communication dans un congrès
hal-00138404v1
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An optimal high contrast e-beam lithography process for the patterning of dense fin networks2005, pp.A/PII.01
Communication dans un congrès
hal-00138401v1
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Transformation of hydrogen silsexquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs2005, pp.P-P.15
Communication dans un congrès
hal-00138399v1
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Recent advances in metallic source-drain engineeringSINANO Workshop, 2005, Grenoble, France
Communication dans un congrès
hal-00138411v1
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Schottky-barrier source-drain architecture for ultimate CMOSSINANO Workshop, 2005, Grenoble, France
Communication dans un congrès
hal-00138409v1
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Impact of large angle tilt implantation on the threshold voltages of LDMOS transistor on SOI2005, pp.D-VI.08
Communication dans un congrès
hal-00138400v1
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TEM characterisation of accumulation low Schottky barrier MOSFET with PtSi contactsSchool on Materials Science and Electron Microscopy, Microscopy of Tomorrow's Industrial Materials, 2005, Berlin, Germany
Communication dans un congrès
hal-00138408v1
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Self-aligned single-electron memories SASEM project (IST-2001-32674)15th NID Workshop - Plenary Meeting, 2005, Madrid, Spain
Communication dans un congrès
hal-00138410v1
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Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM deviceMaterials Research Society Fall Meeting, Nov 2004, Boston, United States. pp.D1.6.1
Communication dans un congrès
hal-00603411v1
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Optimisation and simulation of an alternative nano-flash memory : the SASEM device2004, pp.45-50
Communication dans un congrès
hal-00140991v1
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Transmission electron microscopy of silicides used in ALSB-SOI MOSFET structure2004, pp.479-482
Communication dans un congrès
hal-00147750v1
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Advanced and nanometric MOSFET architecture, multiple gate devices and Pi gatesMIGAS International Summer School on Advanced Microelectronics, MIGAS'04, 2004, Autrans, France
Communication dans un congrès
hal-00140995v1
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Integration of Schottky source/drain in advanced MOS technology : the SODAMOS project13th Melari/NID Workshop, 2004, Athens, Greece
Communication dans un congrès
hal-00141008v1
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FinFET achievement : optimum e-beam lithography to etch dense silicon fins networksMIGAS International Summer School on Advanced Microelectronics, MIGAS'04, 2004, Autrans, France
Communication dans un congrès
hal-00140996v1
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Transmission Electron Microscopy analysis of MOSFET structuresSchool on Materials Science and Electron Microscopy, Emerging Microscopy for Advanced Materials Development-Imaging and Spectroscopy on Atomic Scale, 2004, Berlin, Germany
Communication dans un congrès
hal-00140997v1
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Simulation et optimisation d'une mémoire flash nanométriqueJournées Nationales Nanoélectronique, 2004, Aussois, France
Communication dans un congrès
hal-00140993v1
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Intégration de source/drain Schottky en technologie MOS décananométriqueJournée Club EEA : Electronique des Dispositifs Ultimes et Innovants, 2004, Fuveau, France
Communication dans un congrès
hal-00141009v1
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Transistor MOSFET Schottky en régime nanométriqueJournées Nationales Nanoélectronique, 2004, Aussois, France
Communication dans un congrès
hal-00140994v1
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Electron microscopy analysis of MOSFET structuresIEEE 6th Symposium Diagnostics and Yield 2003, Jun 2003, Warsaw, Poland. pp.67-70
Communication dans un congrès
hal-00146402v1
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Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structuresConference on Microscopy of Semiconducting Materials, Mar 2003, Cambridge, United Kingdom. pp.479-482, ⟨10.1201/9781351074636-110⟩
Communication dans un congrès
hal-00250182v1
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Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drainEuropean Materials Research Society Fall Meeting, 2003, Warsaw, Poland
Communication dans un congrès
hal-00146424v1
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Very low Schottky barrier to n-type silicon with PtEr-stack silicide2003, pp.99-104
Communication dans un congrès
hal-00146416v1
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Performance of Pt-based low Schottky barrier silicide contacts on weakly doped silicon2003, pp.D791-D796
Communication dans un congrès
hal-00146405v1
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New Schottky source/drain architecturesWorkshop Micro et Nanoélectronique, 2003, Crolles, France
Communication dans un congrès
hal-00146417v1
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Low Schottky barrier source/drain for advanced MOS architecture : device, design and material consideration2001, pp.53-56
Communication dans un congrès
hal-00152233v1
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Advanced source/drain architecture using very low Schottky barriers : device design and material engineering2001, pp.203-206
Communication dans un congrès
hal-00152202v1
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Silicon nanoelectronicsMicro and Nano Workshop, 2001, Louvain La Neuve, Belgium
Communication dans un congrès
hal-00152236v1
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Power LDMOS design using an SOI RESURF architecture : on state / breakdown voltage trade-offFranco-Swedish Workshop on SOI, 2001, Grenoble, France
Communication dans un congrès
hal-00152238v1
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Advanced Source/Drain Architecture using Very Low Schottky Barriers: Device Design and Material Engineering31st European Solid-State Device Research Conference, Sep 2001, Nuremberg, Germany. pp.203-206, ⟨10.1109/ESSDERC.2001.195236⟩
Communication dans un congrès
hal-04248570v1
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Low Schottky barrier source/drain for advanced MOS architectureFranco-Swedish Workshop on SOI, 2001, Grenoble, France
Communication dans un congrès
hal-00152239v1
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Mémoires électroniques du futur : évolution de la microélectronique siliciumFête de la Science, 2000, Lille, France
Communication dans un congrès
hal-00158535v1
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Intégration silicium à l'IEMN : de l'architecture de composants aux circuits radiofréquencesJournée Thématique de l'ANRT sur l'Intégration, 2000, Paris, France
Communication dans un congrès
hal-00158505v1
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Modeling local anodic oxidation induced by near field microscopyProc. of the 10th workshop on dielectrics in microelectronics, Nov 1999, Barcelona, Spain
Communication dans un congrès
hal-04249205v1
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Nano-lithography by SPM-induced oxidation: role of space charge in the kinetics of oxide growthProc. of the International Semiconductor Device Research Symposium ISDRS’99, Dec 1999, Charlottesville, United States
Communication dans un congrès
hal-04249195v1
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Nanometer scale Lithography on Silicon, Titanium and PMMA resistE-MRS Materials and Processes for Submicron Technologies, vol. 89, p. 1085-1089, Editors J.M. Martinez- Duart, R. Madar, R.A. Levy, 1999, 1999, Strasbourg, France
Communication dans un congrès
hal-04249216v1
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Impact of non-equilibrium transport and series resistances in 0.1um bulk and SOI MOSFETs27th European Solid-State Device Research Conference, Sep 1997, Stuttgart (Germany), Germany
Communication dans un congrès
hal-04248535v1
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SPM-based lithography techniques using selective anodic oxidationProc. of Phantoms Strategic Domain Meetings PHASDOM’97, Mar 1997, Aachen, Germany
Communication dans un congrès
hal-04249072v1
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Nanometer Scale Lithography of Silicon and Titanium using Scanning Probe Microscopy27th European Solid-State Device Research Conference - ESSDERC, Sep 1997, Stuttgart, Germany
Communication dans un congrès
hal-04248550v1
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Field Induced Oxidation of (100) Silicon Surfaces with coated AFM tip: a quantitative studyProceedings of the 9th International Conference on Scanning Tunneling Microscopy, STM’97, Jul 1997, Hamburg, Germany
Communication dans un congrès
hal-04249069v1
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Anodic Oxidation of Silicon and Titanium based on Near Field MicroscopyProceedings of the International Conference on Solid State Devices and Materials, SSDM’97, Jul 1997, Hamamatsu, Japan
Communication dans un congrès
hal-04249063v1
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Nanooxidation of Silicon Surfaces with a Scanning Probe Microscope: Application to the Conception of NanodevicesProceed¬ings of the N2M’97 workshop, 1997, Tokyo, Japan
Communication dans un congrès
hal-04249224v1
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Nano-Lithography based on Silicon Oxidation using Scanning Probe TechniquesIEEE Silicon Nanoelectronics Workshop (SNW), Jun 1997, Kyoto, Japan
Communication dans un congrès
hal-04248467v1
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Simulations and measurements of cross-talk phenomena in BiCMOS technology for hard disk drivesInternational Electron Devices Meeting. Technical Digest, Dec 1996, San Francisco, United States. pp.481-484, ⟨10.1109/IEDM.1996.553631⟩
Communication dans un congrès
hal-04248420v1
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Nano-Lithography by Scanning Probe MicroscopyProc. of the Third European Workshop on Electrochemical Processing of Semiconductors EWEPS’96, Nov 1996, Paris, France
Communication dans un congrès
hal-04249080v1
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Non-quasi-static SOI MOSFET model dedicated for analog circuit design1996 IEEE International SOI Conference Proceedings, Oct 1996, Sanibel Island, United States. pp.13-14, ⟨10.1109/SOI.1996.552470⟩
Communication dans un congrès
hal-04249085v1
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A New Non-Quasi-Static SOI MOSFET Model Dedicated to Analog Circuit SimulationESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference, Sep 1996, Bologna (ITALY), Italy
Communication dans un congrès
hal-04248412v1
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Accuracy and Convergence Properties of a One-Dimensional Numerical Non-Quasi-Static MOSFET’s Model for Circuit SimulationProceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 1996, Tokyo, Japan. pp.179-180, ⟨10.1109/SISPAD.1996.865328⟩
Communication dans un congrès
hal-04249094v1
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Nano-Lithography on Silicon Surfaces with an SPM Operating in AirProc. of the Third European Workshop on Electrochemical Processing of Semiconduc¬tors EWEPS’96, Nov 1996, Paris, France
Communication dans un congrès
hal-04249076v1
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Physical MOSFET’s model for analog circuit design: application to cur¬rent copier based architecturesProc. of the International Symposium on Circuits and Systems IEEE- ISCAS’96, May 1996, Atlanta (GA), United States
Communication dans un congrès
hal-04249107v1
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Second and third order one-dimensional non-quasi-static bipolar transistor modelsProc. of the International Semiconductor Device Research Symposium ISDRS’95, Dec 1995, Charlottesville, United States
Communication dans un congrès
hal-04249098v1
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Efficient non-quasi-static MOSFETs model for circuit simulationInternational Electron Devices Meeting, Dec 1995, Washington, United States. pp.945-948, ⟨10.1109/IEDM.1995.499372⟩
Communication dans un congrès
hal-04248390v1
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Analysis of the charge injection in MOS analog switches using physical modelsProc. of the International Semiconductor Device Research Symposium ISDRS’95, Dec 1995, Charlottesville, United States
Communication dans un congrès
hal-04249104v1
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Series Resistances of Polysilicon Emitter Bipolar Transistors: Simulation and MeasurementESSDERC '94: 24th European Solid State Device Research Conference, Sep 1994, Edinburg, United Kingdom
Communication dans un congrès
hal-04248378v1
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Short channel immunity and current drive capabilities of recessed mosfets in the sub-50 mn regime52nd Annual Device Research Conference, Jun 1994, Boulder, United States. pp.85-86, ⟨10.1109/DRC.1994.1009426⟩
Communication dans un congrès
hal-04248364v1
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Accuracy of series resistances extraction schemes for polysilicon bipolar transistorsIEEE Bipolar/BiCMOS Circuits and Technology Meeting, Oct 1994, Minneapolis, United States. pp.148-151, ⟨10.1109/BIPOL.1994.587883⟩
Communication dans un congrès
hal-04248381v1
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Efficient scaling of MOSFETS in the 50 nm regime using a recessed channelInternational Symposium Semiconductor Device Research (ISDRS), Dec 1993, Charlottesville (Virginia), United States
Communication dans un congrès
hal-04248357v1
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Transport simulation in submicron MOSFETS by coupling Monte Carlo and Drift DiffusionProc. of Nasecode IX, Apr 1993, Copper Mountain, United States
Communication dans un congrès
hal-04249113v1
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Simulation of non-equilibrium transport in deep submicron MOSFETsESSDERC '93: 23rd European solid State Device Research Conference, Sep 1993, Grenoble, France
Communication dans un congrès
hal-04248343v1
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Efficient numerical procedure for the impurity segregation during oxidation of arbitrarily shaped multilayer structureProc. of the NASECODE VII conference, 1991, Boulder, United States
Communication dans un congrès
hal-04249125v1
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Efficient simulation of impurity segregation during oxidation of arbitrarily shaped multilayer structuresProc. of the SISDEP’91, Sep 1991, Zurich, Switzerland
Communication dans un congrès
hal-04249136v1
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Monte Carlo/drift-diffusion coupling: non-equilibrium transport in deep submicron MOSFETsInternational Electron Devices Meeting 1991 [Technical Digest], Dec 1991, Washington, United States. pp.519-522, ⟨10.1109/IEDM.1991.235342⟩
Communication dans un congrès
hal-04248322v1
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Determination of carriers capture cross-section of Si/SiO2 interface states by means of process/device simulationsProc. of the SISDEP’91, Sep 1991, Zurich, Switzerland
Communication dans un congrès
hal-04249119v1
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Piezoresistivity effects in N-MOSFET devicesTRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers, Jun 1991, San Francisco, United States. pp.1024-1027, ⟨10.1109/SENSOR.1991.149069⟩
Communication dans un congrès
hal-04248291v1
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Surface recombination in bipolar transistorProc. of the Bipolar Circuit and Technology Meeting BCTM’91, Sep 1991, Minneapolis, United States
Communication dans un congrès
hal-04249131v1
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Adaptive Mesh Refinement For Multilayer Process SimulationNUPAD III: Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, Jun 1990, Honolulu, United States. pp.87-88, ⟨10.1109/NUPAD.1990.748290⟩
Communication dans un congrès
hal-04248241v1
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Accurate two-dimensional process-device simulations for the analysis of punchthrough in walled emitter bipolar transistorProc. of NASECODE VI conference, Ed. J.J.H. Miller, Boole Press, Jun 1989, Dublin, Ireland
Communication dans un congrès
hal-04249158v1
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Dynamic mesh refinement for multilayer process simulationDigest of the software forum: Software toold for process, device and circuit modeling, Ed. W. Crans, Boole Press, Jun 1989, Zurich, Switzerland
Communication dans un congrès
hal-04249146v1
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IMPACT 1-2-3, an integrated 2D process/device simulator for MOS technologyDigest of the software forum: Software toold for process, device and circuit modeling, Ed. W. Crans, Boole Press, Jun 1989, Zurich, Switzerland
Communication dans un congrès
hal-04249154v1
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Analysis of the Punchthrough Effect in Walled Emitter Bipolar TransistorsESSDERC '89: 19th European Solid State Device Research Conference, Sep 1989, Berlin (DE), Germany. ⟨10.1007/978-3-642-52314-4_166⟩
Communication dans un congrès
hal-04248227v1
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Two-dimensional process simulation of bipolar devices using a multi-layer simulator: IMPACT-4’Proc. of the Bipolar Circuits and Technology Meeting, BCTM, Sep 1988, Minneapolis, United States
Communication dans un congrès
hal-04249168v1
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Electrical performances evaluation of isolation structures by coupled process and device simulationSimulation of Semiconductor Devices and Processes, Ed. G. Baccarani and M. Rudan, Sep 1988, Bologna, Italy
Communication dans un congrès
hal-04249174v1
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IMPACT-4, a general two-dimensional multi- layer process simulatorSimulation of Semiconductor Devices and Processes, Ed. G. Baccarani and M. Rudan, Sep 1988, Bologna, Italy
Communication dans un congrès
hal-04249164v1
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Micromachining and Packaging of Smart Probes for Sub-mmW on-Wafer MeasurementsJournées Acoustique & Instrumentation, JAI2023 : evolution et applications, Journées Thématiques de la section Electronique du Club EEA, Oct 2023, Cergy - Paris, France
Poster de conférence
hal-04254742v1
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Thermal design of PCM-RF Switches for 5G and beyondPoster de conférence cea-04528379v1 |
Nanometer-scale active thermal devices for thermal microscopy probe calibration16èmes Journées de La Matière Condensée (JMC2018), Aug 2018, Grenoble, France. pp.513-513
Poster de conférence
hal-02023911v1
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Microscopy of Semiconducting Materials 2003A. G. Cullis, P. A. Midgley. CRC Press, 4 p., 2018, 9781351074636. ⟨10.1201/9781351074636⟩
Ouvrages
hal-03555261v1
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Invariance of DC and RF characteristics of mechanically flexible CMOS technology on plastic'Functional nanomaterials and devices for electronics, sensors and energy harvesting, 2014
Chapitre d'ouvrage
hal-04249256v1
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Schottky source/drain MOSFETsDeleonibus S. Intelligent integrated systems : technologies, devices and architectures, Pan Stanford Publishing, section 1, chapter 2, 55-96, 2013, 978-9-8144-1142-4
Chapitre d'ouvrage
hal-00878461v1
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Confined and guided vapor-liquid-solid catalytic growth of silicon nanoribbons : from nanowires to structured silicon-on-insulator layersNazarov A., Colinge J.P., Balestra F., Raskin J.P., Gamiz F., Lysenko V.S. Semiconductor-on-insulator materials for nanoelectronics applications, Springer Berlin Heidelberg, pp.Part 1, 67-89, 2011, Collection : Chemistry and materials science, Series : Engineering materials, ⟨10.1007/978-3-642-15868-1_4⟩
Chapitre d'ouvrage
hal-00591734v1
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Introduction to Schottky-barrier MOS architectures : concept, challenges, material engineering and device integrationBalestra F. Nanoscale CMOS : innovative materials, modeling and characterization, ISTE-WILEY, Chapitre 5, 157-204, 2010
Chapitre d'ouvrage
hal-00575852v1
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Les nanotechnologiesEncyclopédie KLEIO, Larousse-Havas, pp.CD-ROM, 2001
Chapitre d'ouvrage
hal-00132071v1
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Contributions à la modélisation et à la fabrication de dispositifs silicium avancée2005
Autre publication scientifique
hal-00138412v1
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Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing2021
Pré-publication, Document de travail
hal-03350081v1
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Présentation de synthèse sur 20 ans d'activité du Laboratoire Commun ST-IEMNInstitut d'Electronique de Microélectronique et de Nanotechnologie - IEMN UMR 8520; STMicroelectronics. 2024
Rapport
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