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Commutateur RF fabriqué à partir de matériau 2D

 S. Skrzypczak , Myungsoo Kim , Guillaume Ducournau , Dominique Vignaud , Remy Gassilloud , et al.
XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France
Communication dans un congrès hal-03702712v1

[Invited] High frequency electronic devices : impact of beyond graphene materials

 Henri Happy , D. Mele , Ivy Colambo , Mohamed Salah Khenissa , Mohamed Moez Belhaj , et al.
62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WFK - Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications, 2014, Tampa, FL, United States
Communication dans un congrès hal-01044773v1

Key parameters of CVD-grown graphene on copper foil and its transfer for radio-frequency applications

 Wei Wei , Geetanjali Deokar , Mohamed Moez Belhaj , D. Mele , Emiliano Pallecchi , et al.
17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, May 2014, Villeneuve d'Ascq, France. 4 p
Communication dans un congrès hal-01018384v1

High frequency and noise performance of GFETs

 W. Wei , D. Fadil , Marina Deng , S. Fregonese , T. Zimmer , et al.
2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. ⟨10.1109/ICNF.2017.7985969⟩
Communication dans un congrès hal-01695812v1

[Invited] Graphene for radio frequency electronics

 Wei Wei , Fadil Dalal , Sebastien Fregonese , Wlodek Strupinski , Emiliano Pallecchi , et al.
2020 IEEE Latin America Electron Devices Conference (LAEDC), Feb 2020, San Jose, Costa Rica. pp.1-5, ⟨10.1109/LAEDC49063.2020.9073546⟩
Communication dans un congrès hal-02920359v1

Author Correction: Optoelectronic mixing with high-frequency graphene transistors (Nature Communications, (2021), 12, 1, (2728), 10.1038/s41467-021-22943-1)

 A. Montanaro , W. Wei , D. de Fazio , U. Sassi , G. Soavi , et al.
2021, pp.3507. ⟨10.1038/s41467-021-23916-0⟩
Autre publication scientifique hal-03542160v1
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A broadband active microwave monolithically integrated circuit balun in graphene technology

 Dalal Fadil , Vikram Passi , Wei Wei , Soukaina Ben Salk , Di Zhou , et al.
Applied Sciences, 2020, 10 (6), pp.2183. ⟨10.3390/app10062183⟩
Article dans une revue hal-02884085v1

Noise conductance of carbon nanotube transistors

 Emiliano Pallecchi , Bernard Plaçais , Julien Chaste , Pascal Morfin , Gwendal Fève , et al.
APS March meeting, Mar 2010, Portland, United States
Communication dans un congrès hal-00528725v1

Diffusive charge relaxation in a graphene capacitor

 Andreas Betz , Emiliano Pallecchi , Julien Chaste , Gwendal Fève , Benjamin Huard , et al.
Journées de la matière condensée de la société française de physique, JMC12., Aug 2010, Troyes, France
Communication dans un congrès hal-00519803v1

Straightforward bias- and frequency-dependent small-signal model extraction for single-layer graphene FETs

 Nikolaos Mavredakis , Anibal Pacheco-Sanchez , Wei Wei , Emiliano Pallecchi , Henri Happy , et al.
Microelectronics Journal, 2023, 133, pp.105715. ⟨10.1016/j.mejo.2023.105715⟩
Article dans une revue hal-03981909v1

Contact resistance study of “edge-contacted” metal-graphene interfaces

 V. Passi , A. Gahoi , J. Ruhkopf , S. Kataria , Francois Vaurette , et al.
46th European Solid-State Device Conference, ESSDERC 2016, Sep 2016, Lausanne, Switzerland. pp.236-239, ⟨10.1109/ESSDERC.2016.7599629⟩
Communication dans un congrès hal-03335829v1

Towards 500GHz Non-Volatile Monolayer 6G Switches

 Myungsoo Kim , Guillaume Ducournau , Simon Skrzypczak , P. Szriftgiser , Sung Jin Yang , et al.
2022 IEEE/MTT-S International Microwave Symposium, IMS 2022, Jun 2022, Denver, United States. pp.902-905, ⟨10.1109/IMS37962.2022.9865419⟩
Communication dans un congrès hal-03698147v1

Back-gated microwave field-effect transistors based on transferred CVD-grown graphene

 Wei Wei , Mohamed Moez Belhaj , Geetanjali Deokar , D. Mele , Emiliano Pallecchi , et al.
4th Graphene Conference, Graphene 2014, May 2014, Toulouse, France. 2 p
Communication dans un congrès hal-00962381v1

2D-Graphene Epitaxy on SiC for RF Application: Fabrication, Electrical Characterization and Noise Performance

 Dalal Fadil , Wei Wei , Marina Deng , Sebastien Fregonese , Wlodek Stuprinski , et al.
2018 IEEE/MTT-S International Microwave Symposium - IMS 2018, Jun 2018, Philadelphia, United States. pp.228-231, ⟨10.1109/MWSYM.2018.8439655⟩
Communication dans un congrès hal-02372682v1

Transport mechanisms in a puckered graphene-on-lattice

 T. Xu , A. Díaz Álvarez , W. Wei , D. Eschimese , Sophie Eliet , et al.
Nanoscale, 2018, 10 (16), pp.7519-7525. ⟨10.1039/C8NR00678D⟩
Article dans une revue hal-02304358v1

Thermal shot noise in top-gated single carbon nanotubes field effect transistors

 Julien Chaste , Emiliano Pallecchi , Pascal Morfin , Takis Kontos , Gwendal Fève , et al.
Electronic properties of two-dimensional systems (EP2DS 19), Jul 2011, Tallahassee, United States
Communication dans un congrès hal-00657406v1
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Initiation aux matériaux 2D: fabrication, caractérisation, manipulation

 Soukaina Ben Salk , Emiliano Pallecchi , Virginie Hoel , Henri Happy
13ème Colloque Enseignement des Technologies et des Sciences de l'Information et des Systèmes, CETSIS 2018, Oct 2018, Fès, Maroc. pp.47-50
Communication dans un congrès hal-03340623v1

[Invited] 2D RF Electronics: from devices to circuits - challenges and applications

 Dalal Fadil , Wei Wei , Emiliano Pallecchi , M Anderson , Jan Stake , et al.
2018 76th Device Research Conference (DRC), Jun 2018, Santa Barbara, United States. pp.1-2, ⟨10.1109/DRC.2018.8442190⟩
Communication dans un congrès hal-02372652v1

Graphene field effect transistors with optimized contact resistance for current gain

 W. Wei , D. D. Fazio , U. Sassi , A. C. Ferrari , E. Pallecchi , et al.
75th Annual Device Research Conference, DRC 2017, Jun 2017, South Bend, IN, USA, United States. pp.1-2, ⟨10.1109/DRC.2017.7999420⟩
Communication dans un congrès hal-03335834v1

Graphene field effect transistors on flexible substrate : stable process and high RF performance

 Wei Wei , Emiliano Pallecchi , Mohamed Moez Belhaj , Alba Centeno , Amaia Zurutuza , et al.
11th European Microwave Integrated Circuits Conference, EuMIC 2016, Oct 2016, London, United Kingdom. pp.165-168, ⟨10.1109/EuMIC.2016.7777516⟩
Communication dans un congrès hal-03335833v1
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Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors

 Anibal Pacheco-Sanchez , Nikolaos Mavredakis , Pedro C. Feijoo , Wei Wei , Emiliano Pallecchi , et al.
IEEE Transactions on Electron Devices, 2020, 67 (12), pp.5790-5796. ⟨10.1109/TED.2020.3029542⟩
Article dans une revue hal-03321544v1

High Frequency Characterization and Compact Electrical Modelling of Graphene Field Effect Transistors

 Poornakarthik Nakkala , Audrey Martin , Michel Campovecchio , Henri Happy , Mohamed Salah Khenissa , et al.
44th European Microwave Conference, Oct 2014, Rome, Italy. pp.1452-1455, ⟨10.1109/EuMC.2014.6986720⟩
Communication dans un congrès hal-01136463v1
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Velocity saturation effect on low frequency noise in short channel single layer graphene field effect transistors (FETs)

 Nikolaos Mavredakis , Wei Wei , Emiliano Pallecchi , Dominique Vignaud , Henri Happy , et al.
ACS Applied Electronic Materials, 2019, 1 (12), pp.2626-2636. ⟨10.1021/acsaelm.9b00604⟩
Article dans une revue hal-03133324v1
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High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

 Marina Deng , Dalal Fadil , Wei Wei , Emiliano Pallecchi , Henri Happy , et al.
IEEE Transactions on Microwave Theory and Techniques, 2020, 68 (6), pp.2116-2123. ⟨10.1109/TMTT.2020.2982396⟩
Article dans une revue hal-02540064v1

Flower-Shaped Domains and Wrinkles in Trilayer Epitaxial Graphene on Silicon Carbide

 B. Lalmi , J.C. Girard , E. Pallecchi , M. Silly , C. David , et al.
Scientific Reports, 2014, 4, ⟨10.1038/srep04066⟩
Article dans une revue cea-01410559v1

Hot electron cooling by acoustic phonons in graphene

 Andreas Betz , Fabien Vialla , David Brunel , Christophe Voisin , Matthieu Picher , et al.
Physical Review Letters, 2012, 109, pp.056805
Article dans une revue hal-00904264v1
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Disorder-perturbed Landau levels in high-electron-mobility epitaxial graphene

 Simon Maëro , Abderrezak Torche , Thanyanan Phuphachong , Emiliano Pallecchi , Abdelkarim Ouerghi , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90, pp.195433
Article dans une revue hal-01156613v1

Gigahertz frequency graphene transistor, high yield process and good stability under strain

 Wei Wei , S. Mhedhbi , S. Salk , T. Levert , O. Txoperena , et al.
14th European Microwave Integrated Circuits Conference, EuMIC 2019, Sep 2019, Paris, France. pp.208-211, ⟨10.23919/EuMIC.2019.8909548⟩
Communication dans un congrès hal-03259628v1

Non-linearity of RF switch based on 2D materials

 S. Skrzypczak , K. Myungsoo , Guillaume Ducournau , Dominique Vignaud , R. Gassilloud , et al.
Graphene2021, Oct 2021, Grenoble, France
Communication dans un congrès hal-03584529v1

Monolayer molybdenum disulfide switches for 6G communication systems

 Myungsoo Kim , Guillaume Ducournau , Simon Skrzypczak , Sung Jin Yang , Pascal Szriftgiser , et al.
Nature Electronics, 2022, ⟨10.1038/s41928-022-00766-2⟩
Article dans une revue hal-03689339v1
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