Nombre de documents

38

CV de Etienne Janod


Article dans une revue37 documents

  • Madec Querré, Etienne Janod, Laurent Cario, Julien Tranchant, Benoît Corraze, et al.. Metal–insulator transitions in (V1-xCrx)2O3 thin films deposited by reactive direct current magnetron co-sputtering. Thin Solid Films, Elsevier, 2016, <10.1016/j.tsf.2015.12.043>. <hal-01254794>
  • Pablo Stoliar, Pascale Diener, Julien Tranchant, Benoît Corraze, Benjamin Briè, et al.. Resistive Switching Induced by Electric Pulses in a Single-Component Molecular Mott Insulator. Journal of Physical Chemistry C, American Chemical Society, 2015, 119, pp.2983-2988. <American Chemical Society>. <10.1021/jp512810e>. <hal-01122400>
  • Etienne Janod, Julien Tranchant, Benoît Corraze, Madec Querré, Pablo Stoliar, et al.. Resistive Switching in Mott Insulators and Correlated Systems. Advanced Functional Materials, Wiley, 2015, 25 (40), pp.6287--6305. <10.1002/adfm.201500823>. <hal-01233571>
  • Gerbold C. Ménard, Sébastien Guissart, Christophe Brun, Stéphane Pons, Vasily Stolyarov, et al.. Coherent long-range magnetic bound states in a superconductor. Nature Physics, Nature Publishing Group, 2015, 11, pp.1013 - 1016. <10.1038/nphys3508>. <hal-01387239>
  • J. Tranchant, A. Pellaroque, Etienne Janod, Benoit Angleraud, Benoît Corraze, et al.. Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications. Journal of Physics D: Applied Physics, IOP Publishing, 2014, 47 (6), pp.65309. <10.1088/0022-3727/47/6/065309>. <hal-00982778>
  • Madec Querré, Benoît Corraze, Etienne Janod, Marie-Paule Besland, Julien Tranchant, et al.. Electric Pulse Induced Resistive Switching in the Narrow Gap Mott Insulator GaMo4S8. Key Engineering Materials, 2014, 617, pp.135-140. <10.4028/www.scientific.net/KEM.617.135>. <hal-01082726>
  • Kiran Singh, Charles Simon, Elena Cannuccia, Marie-Bernadette Lepetit, Benoit Corraze, et al.. Orbital-Ordering-Driven Multiferroicity and Magnetoelectric Coupling in GeV4S8. Physical Review Letters, American Physical Society, 2014, 113 (13), pp.137602. <10.1103/PhysRevLett.113.137602>. <hal-01369148>
  • Benoît Corraze, Etienne Janod, Laurent Cario, P. Moreau, L. Lajaunie, et al.. Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott insulators AM4Q8. European Physical Journal - Special Topics, EDP Sciences, 2013, 222, pp.1046-1056. <10.1140/epjst/e2013-01905-1>. <hal-00872035>
  • J. Tranchant, Etienne Janod, Laurent Cario, Benoît Corraze, E. Souchier, et al.. Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers. Thin Solid Films, Elsevier, 2013, 533, pp.61. <10.1016/j.tsf.2012.10.104>. <hal-00968793>
  • Vincent Guiot, Laurent Cario, Etienne Janod, Benoît Corraze, Vinh Ta Phuoc, et al.. Resistive switching induced by electronic avalanche breakdown in GaTa$_4$Se$_{8-x}$Te$_x$ narrow gap Mott Insulators. Nature Communications, Nature Publishing Group, 2013, 4, pp.1722. <10.1038/ncomms2735>. <hal-00814337>
  • Pablo Stoliar, Laurent Cario, Etienne Janod, Benoît Corraze, Catherine Guillot-Deudon, et al.. Universal electric-field-driven resistive transition in narrow-gap Mott insulators. Advanced Materials, Wiley-VCH Verlag, 2013, 25 (23), pp.3222-3226. <10.1002/adma.201301113>. <hal-00863729>
  • Emeline Souchier, Marie-Paule Besland, Julien Tranchant, Benoît Corraze, Philippe Moreau, et al.. Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application. Thin Solid Films, Elsevier, 2013, vol. 533, pp. 54-60. <10.1016/j.tsf.2012.11.051>. <hal-00865622>
  • V. Ta Phuoc, C. Vaju, Benoît Corraze, R. Sopracase, A. Perucchi, et al.. Optical Conductivity Measurements of GaTa4Se8 Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition. Physical Review Letters, American Physical Society, 2013, 110 (3), pp.037401. <10.1103/PhysRevLett.110.037401>. <hal-00980489>
  • V Brouet, J Mauchain, E Papalazarou, Jérôme Faure, M Marsi, et al.. Ultrafast filling of an electronic pseudogap in photoexcited (LaS) 1.196 VS 2. Physical Review B : Condensed matter and materials physics, American Physical Society, 2013, 87, pp.041106(R). <hal-01159053>
  • V. Brouet, J. Mauchain, E. Papalazarou, Jérôme Faure, M. Marsi, et al.. Ultrafast filling of an electronic pseudogap in an incommensurate crystal. Physical Review B : Condensed matter and materials physics, American Physical Society, 2013, 87 (4), pp.041106. <10.1103/PhysRevB.87.041106>. <hal-00982111>
  • Vincent Dubost, Tristan Cren, Cristian Vaju, Laurent Cario, Benoît Corraze, et al.. Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8. Nano Letters, American Chemical Society, 2013, 13 (8), pp.3648. <10.1021/nl401510p>. <hal-00980721>
  • V. Guiot, Etienne Janod, Benoît Corraze, Laurent Cario. Control of the Electronic Properties and Resistive Switching in the New Series of Mott Insulators GaTa(4)Se(8-y)Te(y) (0 <= y <= 6.5). Chemistry of Materials, American Chemical Society, 2011, 23 (10), pp.2611. <10.1021/cm200266n>. <hal-00849442>
  • Emeline Souchier, Laurent Cario, Benoît Corraze, Philippe Moreau, Pascale Mazoyer, et al.. First evidence of resistive switching in polycrystalline GaV(4)S(8) thin layers. physica status solidi (RRL) - Rapid Research Letters, Wiley-VCH Verlag, 2011, 5 (2), pp.53. <10.1002/pssr.201004392>. <hal-00849496>
  • J. Laverock, A. R. H. Preston, B. Chen, J. Mcnulty, K. E. Smith, et al.. Orbital anisotropy and low-energy excitations of the quasi-one-dimensional conductor beta-Sr(0.17)V(2)O(5). Physical Review B : Condensed matter and materials physics, American Physical Society, 2011, 84 (15), pp.155103. <10.1103/PhysRevB.84.155103>. <hal-00849614>
  • E. Dorolti, Laurent Cario, Benoît Corraze, Etienne Janod, C. Vaju, et al.. Half-Metallic Ferromagnetism and Large Negative Magnetoresistance in the New Lacunar Spinel GaTi3VS8. Journal of the American Chemical Society, American Chemical Society, 2010, 132 (16), pp.5704. <10.1021/ja908128b>. <hal-00481312>
  • Laurent Cario, C. Vaju, Benoît Corraze, V. Guiot, Etienne Janod. Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories.. Advanced Materials, Wiley-VCH Verlag, 2010, 22 (45), pp.5193. <10.1002/adma.201002521>. <hal-00848977>
  • Laurent Cario, Cristian Vaju, Benoît Corraze, Vincent Guiot, Etienne Janod. Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories. Advanced Materials, Wiley-VCH Verlag, 2010, 22 (45), pp.5193. <10.1002/adma.201002521>. <hal-00815184>
  • V.T. Phuoc, C. Sellier, Benoît Corraze, Etienne Janod, C. Marin. Charge dynamics in quasi-one dimensional beta-Sr1/6V2O5. European Physical Journal B : Condensed Matter Physics, EDP Sciences, 2009, 69 (2), pp.181. <10.1140/epjb/e2009-00148-9>. <hal-00432072>
  • Vincent Dubost, Tristan Cren, C. Vaju, Laurent Cario, Benoît Corraze, et al.. Electric field Assisted Nanostucturing of a Mott Insulator. Advanced Functional Materials, Wiley, 2009, 19, pp.2800. <10.1002/adfm.200900208>. <hal-00399238>
  • O. Mentre, Etienne Janod, P. Rabu, M. Hennion, F. Leclercq-Hugeux, et al.. Incommensurate spin correlation driven by frustration in BiCu2PO6. Physical Review B : Condensed matter and materials physics, American Physical Society, 2009, 80 (18), pp.180413-1. <10.1103/PhysRevB.80.180413>. <hal-00476042>
  • H. Kabbour, Etienne Janod, Benoît Corraze, M. Danot, C. Lee, et al.. Structure and magnetic properties of oxychalcogenides A(2)F(2)Fe(2)OQ(2) (A = sr, ba; Q = s, se) with Fe2O square planar layers representing an antiferromagnetic checkerboard spin lattice. Journal of the American Chemical Society, American Chemical Society, 2008, 130 (26), pp.8261. <10.1021/ja711139g>. <hal-00396532>
  • C. Vaju, J. Martial, Etienne Janod, Benoît Corraze, V. Fernandez, et al.. Metal-metal bonding and correlated metallic behavior in the new deficient spinel Ga0.87Ti4S8. Chemistry of Materials, American Chemical Society, 2008, 20 (6), pp.2382. <10.1021/cm703490t>. <hal-00396571>
  • C. Vaju, Laurent Cario, Benoît Corraze, Etienne Janod, Vincent Dubost, et al.. Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator. Advanced Materials, Wiley-VCH Verlag, 2008, 20, pp.2760-2765. <10.1002/adma.200702967>. <hal-00414696>
  • C. Vaju, Laurent Cario, Benoît Corraze, Etienne Janod, Vincent Dubost, et al.. Electric pulse induced resistive switching and possible superconductvity in the Mott insulator GaTa4 Se8. Microelectronic Engineering, Elsevier, 2008, 85 (12), pp.2430. <10.1016/j.mee.2008.09.026>. <hal-00396712>
  • V.T. Phuoc, C. Sellier, Etienne Janod, C. Marin. Polarized reflectivity of beta-Sr0.17V2O5. Physical Review B : Condensed matter and materials physics, American Physical Society, 2008, 77 (7), <10.1103/PhysRevB.77.075123>. <hal-00396572>
  • C. Doussier, G. Andre, P. Leone, Etienne Janod, Y. Moelo. Magnetic study of two isotypic manganese chloro-sulfides: MnSbS2Cl and the new compound MnBiS2Cl. Journal of Solid State Chemistry, Elsevier, 2006, 179, pp.486. <10.1016/j.jssc.2005.10.045>. <hal-00379516>
  • V. Ta Phuoc, C. Sellier, Etienne Janod. Optical transitions in the two-leg ladder compounds AxV6O15 (A =Sr,Na). Physical Review B : Condensed matter and materials physics, American Physical Society, 2005, 72, pp.035120. <10.1103/PhysRevB.72.035120>. <hal-00022280>
  • François-Xavier Lannuzel, Etienne Janod, Christophe Payen, Benoît Corraze, Daniel Braithwaite, et al.. Magnetoelastic polarons in the hole-doped quasi-one dimensional model system Y2-xCaxBaNiO5. Physical Review B : Condensed matter and materials physics, American Physical Society, 2004, 70, pp.155111. <hal-00003219>
  • Claire Sellier, Florent Boucher, Etienne Janod. Crystal structure and charge order below the metal-insulator transition in the vanadium bronze $\beta$-SrV$_6$O$_{15}$. Solid State Sciences, Elsevier, 2003, 5, pp.591-599. <hal-00116484>
  • V. Villar, Régis Mélin, C. Paulsen, J. Souletie, Etienne Janod, et al.. Unconventional antiferromagnetic correlations of the doped Haldane gap system Y$_2$BaNi$_{1-x}$Zn$_x$O$_5$. European Physical Journal B : Condensed Matter Physics, EDP Sciences, 2002, 25, pp.39-51. <hal-00020498>
  • Christophe Payen, Etienne Janod, K. Schoumacker, C. D. Batista, K. Hallberg, et al.. Evidence of quantum criticality in the doped Haldane system Y2BaNiO5. Physical Review B : Condensed matter and materials physics, American Physical Society, 2000, 62, pp.2998-3001. <hal-00129468>
  • G. Triscone, A.F. Khoder, Christine Opagiste, J. Y. Genoud, Thomas Graf, et al.. Reversible magnetization below Tc in high-quality superconducting ceramics. Physica C: Superconductivity and its Applications, Elsevier, 1994, 224, pp.263 - 274. <hal-00585258>

Pré-publication, Document de travail1 document

  • Vincent Dubost, Tristan Cren, François Debontridder, Dimitri Roditchev, C. Vaju, et al.. Electric pulse induced electronic patchwork in the Mott insulator GaTa4Se8. 2012. <hal-00698631>