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98 résultats
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Superior long term stability of SiC nanowires over Si nanowires under physiological conditionsMaterials Research Express, 2019, 6 (1), pp.015013. ⟨10.1088/2053-1591/aae32a⟩
Article dans une revue
hal-02006133v1
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Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential MethodIEEE Transactions on Electron Devices, 2020, 67 (11), pp.4649-4653. ⟨10.1109/TED.2020.3015466⟩
Article dans une revue
cea-02972351v1
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Electrical characterization of metal/a-SiC:H/Si MIS capacitors for DNA sensor applicationMicro & NanoEngineering (MNE) 2018, Sep 2018, Copenhague, Denmark
Communication dans un congrès
hal-02072177v1
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Detection of DNA using Silicon carbide nanowire based Field effect transistor9èmes Journées Maghreb-Europe sur les Matériaux et leurs Applications aux Dispositifs et aux Capteurs (MADICA 2014), Nov 2014, Madhia, Morocco
Communication dans un congrès
hal-02008608v1
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Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETsIEEE Transactions on Electron Devices, 2012, 59 (8), pp.2085-2092
Article dans une revue
hal-02006109v1
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Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique2015 International Conference on Microelectronic Test Structures (ICMTS), Mar 2015, Tempe, United States. pp.163-168, ⟨10.1109/ICMTS.2015.7106134⟩
Communication dans un congrès
hal-02009889v1
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Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etchingPhysica Status Solidi, 2005, a, pp.1-5
Article dans une revue
hal-00145183v1
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Caractérisation de diodes pin à base de carbure de silicium de polytype 4H par spectroscopie Raman et photoémissionColloque du Groupement Français de Spectroscopie Vibrationnelle (GFSV), thème 2005: Imagerie et Cartographie en Spectroscopie Vibrationnelle, Ecole de Physique des Houches, 2005, France. pp.XX
Communication dans un congrès
hal-00148225v1
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Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etchingEuropean Conf. on SiC and Related Materials, ECSCRM'04, 2005, 483-485, pp.773-776
Article dans une revue
hal-00146143v1
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Carburization of Si Microwires by Chemical Vapour DepositionJournal of Nanoscience and Nanotechnology, 2011, 11 (9), pp.8412-8415. ⟨10.1166/jnn.2011.5094⟩
Article dans une revue
hal-00629247v1
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SiC-based nanowires and nanotubes for harsh and biological environmentsInternational Conference on One-dimensional Nanomaterials, Sep 2013, Annecy, France
Communication dans un congrès
hal-00950044v1
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Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effectMicroelectronic Engineering, 2017, 178, pp.128-131. ⟨10.1016/j.mee.2017.05.009⟩
Article dans une revue
hal-01948003v1
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Integration of SiC-1D nanostructures into nano-Field Effect Transistors, Mater. Sci. Semicond. Process.Materials Science in Semiconductor Processing, 2015, 29, pp.218-222. ⟨10.1016/j.mssp.2014.03.020⟩
Article dans une revue
hal-01302249v1
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High temperature investigation of electron transport properties in 2DEG AlGaN/AlN/GaN MIS-HEMT wafer adapted from four-point probe technique20th Conference of Insulating Films on Semiconductors (INFOS 2017), Jun 2017, Potsdam, Germany
Communication dans un congrès
hal-02009848v1
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Functionalisation of SiC NanoWire Field Effect Transistors (NWFETs) for advanced biosensor applications11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece
Communication dans un congrès
hal-02008537v1
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Development of SOI FETs based on core–shell Si/SiC nanowires for sensing in liquid environments12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2018, Birmingham, United Kingdom
Communication dans un congrès
hal-02008564v1
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Field effect transistors based on catalyst-free grown 3C-SiC nanowires. Materials Science Forum 2010, 645-648, 1235-12382010
Ouvrages
hal-01710866v1
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SiC Nanowire Field-Effect-Transistors13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Oct 2016, Rome, Italy
Communication dans un congrès
hal-01698953v1
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New semiconductive nanostructures for electrical biosensingJournée Thématique Minalogic : Technologies du numérique pour la médecine personnalisée, Nov 2016, La Tronche, France
Communication dans un congrès
hal-02049764v1
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First functionalization experimental results of SiC nanopillars for biosensing applicationsECSCRM (European Conference on Silicon Carbide and Related Materials), Sep 2012, Saint Petersbourg, Russia
Communication dans un congrès
hal-00778027v1
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Si-SiC core-shell nanowires.Journal of Crystal Growth, 2012, 363, ⟨10.1016/j.jcrysgro.2012.10.039⟩
Article dans une revue
istex
hal-00794231v1
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SiC-based 1D nanostructures for bio-nano sensorsEMRS 2013, 2013, Strasbourg, France
Communication dans un congrès
hal-00955735v1
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SiC Nanowire-Based Transistors for Electrical DNA DetectionEd. by S. E. Saddow. Silicon Carbide Biotechnology (Second Edition): A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications, Elsevier, pp.1-25, 2016, 978-0-12-802993-0
Chapitre d'ouvrage
hal-02006095v1
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Elaboration of core Si/shell SiC nanowiresMaterials Science Forum, 2013, 740-742, pp.306-310. ⟨10.4028/www.scientific.net/MSF.740-742.306⟩
Article dans une revue
hal-00850239v1
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Comparative study on dry ICP etching of α- and β-SiC nano-pillarsMaterials Science Forum, 2013, 740-742, pp.817-820
Article dans une revue
hal-00944252v1
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Sheet resistance measurement on AlGaN/GaN wafers and dispersion studyINFOS 2013, Jun 2013, Cracow, Poland. pp.P.14
Communication dans un congrès
hal-01074271v1
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Conversion of Si nanowires into SiC nanotubesInternational Conference on Silicon Carbide and Related Materials, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00650067v1
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Electrical transport properties of catalyst-free grown 3C-SiC nanowiresInternational workshop on 3C-SiC hetero-epitaxy (Hetero-SiC '09), May 2009, Catania, Italy
Communication dans un congrès
hal-00603791v1
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Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodesApplied Physics Letters, 2012, 101 (22), 222111, 4 p. ⟨10.1063/1.4768440⟩
Article dans une revue
hal-00769905v1
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Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimesNanotechnology, 2007, 18, pp.475715-475720. ⟨10.1088/0957-4484/18/47/475715⟩
Article dans une revue
istex
hal-00353870v1
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