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Number of documents

229

CV français


M. Dominique Planson

Téléphone : 04 72 43 87 24

Ingénieur INSA-GE, option Micro-électronique (91), DEA-DEI (91), Docteur INSA (1994)


Journal articles102 documents

  • Besar Asllani, Pascal Bevilacqua, Hervé Morel, Dominique Planson, Luong Viet Phung, et al.. Static and switching characteristics of 10 kV-class Silicon Carbide Transistors and Darlingtons. Materials Science Forum, Trans Tech Publications Inc., 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩. ⟨hal-02931290⟩
  • Camille Sonneville, Dominique Planson, Luong Viêt Phung, Pascal Bevilacqua, Besar Asllani. Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC). Materials Science Forum, Trans Tech Publications Inc., 2020, 1004, pp.290. ⟨10.4028/www.scientific.net/MSF.1004.290⟩. ⟨hal-02925178⟩
  • Teng Zhang, Christophe Raynaud, Dominique Planson. Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode. Materials Science Forum, Trans Tech Publications Inc., 2019, 963, pp.576-579. ⟨10.4028/www.scientific.net/MSF.963.576⟩. ⟨hal-02436812⟩
  • Besar Asllani, Hervé Morel, Luong Viêt Phung, Dominique Planson. 10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization. Energies, MDPI, 2019, ⟨10.3390/en12234566⟩. ⟨hal-02398585⟩
  • Besar Asllani, Alberto Castellazzi, Dominique Planson, Hervé Morel. Subthreshold Drain current hysteresis of planar SiC MOSFETs. Materials Science Forum, Trans Tech Publications Inc., 2019, 963, pp.184-188. ⟨10.4028/www.scientific.net/MSF.963.184⟩. ⟨hal-02060341⟩
  • Teng Zhang, Christophe Raynaud, Dominique Planson. Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts. European Physical Journal: Applied Physics, EDP Sciences, 2019, 85 (1), pp.10102. ⟨10.1051/epjap/2018180282⟩. ⟨hal-02047099⟩
  • Besar Asllani, Dominique Planson, Pascal Bevilacqua, Jean-Baptiste Fonder, Beverley Choucoutou, et al.. Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes. Materials Science Forum, Trans Tech Publications Inc., 2019, 963, pp.567-571. ⟨10.4028/www.scientific.net/MSF.963.567⟩. ⟨hal-02060334⟩
  • Dominique Planson, Besar Asllani, Luong-Viet Phung, Pascal Bevilacqua, Hassan Hamad, et al.. Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors. Materials Science in Semiconductor Processing, Elsevier, 2019, 94, pp.116-127. ⟨10.1016/j.mssp.2019.01.042⟩. ⟨hal-02053053⟩
  • Besar Asllani, Pascal Bevilacqua, Abderrahime Zaoui, Gregory Grosset, Dominique Planson, et al.. High-Voltage SiC-JFET Fabrication and Full Characterization. Materials Science Forum, Trans Tech Publications Inc., 2019, 963, pp.688-692. ⟨10.4028/www.scientific.net/MSF.963.688⟩. ⟨hal-02060228⟩
  • Dominique Planson, Besar Asllani, Hassan Hamad, Marie-Laure Locatelli, R Arvinte, et al.. Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode. Materials Science Forum, Trans Tech Publications Inc., 2018, Silicon Carbide and Related Materials 2017, 924, pp.577-580. ⟨10.4028/www.scientific.net/MSF.924.577⟩. ⟨hal-01818806⟩
  • Besar Asllani, Jean Baptiste Fonder, Pascal Bevilacqua, Dominique Planson, Luong Viet Phung, et al.. Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes. Materials Science Forum, Trans Tech Publications Inc., 2018, 924, pp.593 - 596. ⟨10.4028/www.scientific.net/MSF.924.593⟩. ⟨hal-01857352⟩
  • Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson. VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, Elsevier, 2018, 88-90, pp.604 - 609. ⟨10.1016/j.microrel.2018.06.047⟩. ⟨hal-01889461⟩
  • Jean-François Mogniotte, Dominique Tournier, Christophe Raynaud, Mihai Lazar, Dominique Planson, et al.. Silicon Carbide Technology of MESFET-Based Power Integrated Circuits. IEEE Journal of Emerging and Selected Topics in Power Electronics, Institute of Electrical and Electronics Engineers, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩. ⟨hal-01864533⟩
  • Junichi Hasegawa, Loris Pace, Luong Viet Phung, Mutsuko Hatano, Dominique Planson. Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (3), pp.1203-1208. ⟨10.1109/TED.2017.2657223⟩. ⟨hal-01636430⟩
  • Gabriel Ferro, Selsabil Sejil, Mihai Lazar, D. Carole, C. Brylinski, et al.. Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions. physica status solidi (a), Wiley, 2017, 214 (4), ⟨10.1002/pssa.201600454⟩. ⟨hal-01615190⟩
  • Hassan Hamad, Dominique Planson, Christophe Raynaud, Pascal Bevilacqua. OBIC Technique Applied to Wide Bandgap Semiconductors from 100 K up to 450 K. Semiconductor Science and Technology, IOP Publishing, 2017, 32 (5), ⟨10.1088/1361-6641/aa641d/meta⟩. ⟨hal-01865068⟩
  • Julien Pezard, Véronique Soulière, Mihai Lazar, Naoufel Haddour, François Buret, et al.. Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections. Materials Science Forum, Trans Tech Publications Inc., 2017, 897, pp.739 - 742. ⟨10.4028/www.scientific.net/MSF.897.739⟩. ⟨hal-01644735⟩
  • Selsabil Sejil, Loïc Lalouat, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters. Materials Science Forum, Trans Tech Publications Inc., 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩. ⟨hal-01648360⟩
  • Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Christophe Raynaud, et al.. A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩. ⟨hal-01387992⟩
  • Selsabil Sejil, Mihai Lazar, Frédéric Cayrel, Davy Carole, Christian Brylinski, et al.. Optimization of VLS Growth Process for 4H-SiC P/N Junctions. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩. ⟨hal-01388031⟩
  • Thi Thanh Huyen Nguyen, Mihai Lazar, Jean-Louis Augé, Hervé Morel, Luong Viet Phung, et al.. Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩. ⟨hal-01391838⟩
  • Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Sigo Scharnholz, Bertrand Vergne, et al.. Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.245 - 248. ⟨10.4028/www.scientific.net/MSF.858.245⟩. ⟨hal-01388035⟩
  • Amira Souguir-Aouani, Nicolas Thierry-Jebali, Dominique Tournier, Arnaud Yvon, Emmanuel Collard, et al.. Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.1190 - 1193. ⟨10.4028/www.scientific.net/MSF.858.1190⟩. ⟨hal-01857348⟩
  • Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Christophe Raynaud, et al.. Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti3SiC2 Phase. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩. ⟨hal-01388027⟩
  • Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Berangère Toury, et al.. A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩. ⟨hal-01391858⟩
  • Tony Abi-Tannous, Maher Soueidan, G. Ferro, Mihai Lazar, B. Toury, et al.. Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing. Applied Surface Science, Elsevier, 2015, 347, pp.186 - 192. ⟨10.1016/j.apsusc.2015.04.077⟩. ⟨hal-01391845⟩
  • Thibaut Chailloux, Cyril Calvez, Dominique Tournier, Dominique Planson. Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.814-817. ⟨10.4028/www.scientific.net/MSF.821-823.814⟩. ⟨hal-02116809⟩
  • Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantin Vamvoukakis, et al.. 4H-SiC VJFETs with Self-Aligned Contacts. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩. ⟨hal-01391852⟩
  • Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Sigo Scharnholz, Dominique Planson. Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.223 - 228. ⟨10.4028/www.scientific.net/MSF.821-823.223⟩. ⟨hal-01387987⟩
  • Selsabil Sejil, Farah Laariedh, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩. ⟨hal-01387983⟩
  • Mihai Lazar, Selsabil Sejil, L. Lalouat, Christophe Raynaud, D. Carole, et al.. P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices. Romanian Journal of Information Science and Technology, Romanian Academy, 2015, 18 (4), pp.329-342. ⟨hal-01626119⟩
  • Pierre Brosselard, Florian Chevalier, Benjamin Proux, Nicolas Thierry-Jebali, Pascal Bevilacqua, et al.. Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode. Materials Science Forum, Trans Tech Publications Inc., 2015, 806, pp.117-120. ⟨10.4028/www.scientific.net/MSF.806.117⟩. ⟨hal-02133670⟩
  • Maxime Berthou, Dominique Planson, Dominique Tournier. Short-Circuit Capability Exploration of Silicon Carbide Devices. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.810-813. ⟨10.4028/www.scientific.net/MSF.821-823.810⟩. ⟨hal-02133674⟩
  • Mihai Lazar, Farah Laariedh, Pierre Cremillieu, Dominique Planson, Jean-Louis Leclercq. The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2015, 365, pp.256 - 259. ⟨10.1016/j.nimb.2015.07.033⟩. ⟨hal-01391844⟩
  • Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. 2D Electric field imagery in 4H-SiC power diodes using OBIC technique. European Physical Journal: Applied Physics, EDP Sciences, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩. ⟨hal-01387989⟩
  • Houssam Arbess, Karine Isoird, Moustafa Zerarka, Henri Schneider, Marie-Laure Locatelli, et al.. High termination efficiency using polyimide trench for high voltage diamond Schottky diode. Diamond and Related Materials, Elsevier, 2015, 58, pp.149-154. ⟨10.1016/j.diamond.2015.07.006⟩. ⟨hal-01218796⟩
  • Houssam Arbess, Karine Isoird, Saleem Hamady, Moustafa Zerarka, Dominique Planson. Original Field Plate to Decrease the Maximum Electric Field Peak for High-Voltage Diamond Schottky Diode. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (9), pp. 2945-2951. ⟨10.1109/TED.2015.2456073⟩. ⟨hal-01218835⟩
  • Thibaut Chailloux, Cyril Calvez, Nicolas Thierry-Jebali, Dominique Planson, Dominique Tournier. SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices. Materials Science Forum, Trans Tech Publications Inc., 2014, 778-780, pp.1122 - 1125. ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩. ⟨hal-01628242⟩
  • Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Dominique Tournier, Bertrand Vergne, et al.. Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes. Applied Physics Letters, American Institute of Physics, 2014, 104 (8), ⟨10.1063/1.4866581⟩. ⟨hal-01387924⟩
  • Nicolas Thierry-Jebali, Mihai Lazar, A. Vo-Ha, D. Carole, V. Soulière, et al.. Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts. Materials Science Forum, Trans Tech Publications Inc., 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩. ⟨hal-01987147⟩
  • Florian Chevalier, Pierre Brosselard, Dominique Tournier, G. Grosset, L. Dupuy, et al.. Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.938-941. ⟨10.4028/www.scientific.net/MSF.740-742.938⟩. ⟨hal-00803057⟩
  • Davy Carole, Arthur Vo-Ha, Anthony Thomas, Mihai Lazar, Nicolas Thierry-Jebali, et al.. Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩. ⟨hal-00803058⟩
  • Luong Viet Phung, Dominique Planson, Pierre Brosselard, Dominique Tournier, C. Brylinski. 3D TCAD Simulations for More Efficient SiC Power Devices Design. ECS Transactions, Electrochemical Society, Inc., 2013, 58 (4), pp.331 - 339. ⟨10.1149/05804.0331ecst⟩. ⟨hal-01636483⟩
  • Amandine Masson, Wissam Sabbah, Raphaël Riva, Cyril Buttay, Stephane Azzopardi, et al.. Die attach using silver sintering. Practical implementation and analysis. European Journal of Electrical Engineering, Lavoisier, 2013, 16 (3-4), pp.293-305. ⟨10.3166/ejee.16.293-305⟩. ⟨hal-00874465⟩
  • Nicolas Dheilly, Dominique Planson, Gontran Pâques, Sigo Scharnholz. Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE. Solid-State Electronics, Elsevier, 2012, 73, pp.32-36. ⟨10.1016/j.sse.2012.02.007⟩. ⟨hal-00747348⟩
  • Stanislas Hascoët, Cyril Buttay, Dominique Planson, Rodica Chiriac, Amandine Masson. Pressureless Silver Sintering Die-Attach for SiC Power Devices. Materials Science Forum, Trans Tech Publications Inc., 2012, 740 - 742, pp.851-854. ⟨10.4028/www.scientific.net/MSF.740-742.851⟩. ⟨hal-00799893⟩
  • Duy Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, et al.. OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩. ⟨hal-00803059⟩
  • Nicolas Dheilly, Gontran Pâques, Sigo Scharnholz, Dominique Planson. Pulse Characterization of Optically Triggered SiC Thyristors. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.1179-1182. ⟨10.4028/www.scientific.net/MSF.717-720.1179⟩. ⟨hal-02166420⟩
  • Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, et al.. 600 V PiN diodes fabricated using on-axis 4H silicon carbide. Materials Science Forum, Trans Tech Publications Inc., 2012. ⟨hal-02126341⟩
  • Nicolas Dheilly, Gontran Pâques, Sigo Scharnholz, Dominique Planson. Parallel and serial association of SiC light triggered thyristors. Materials Science Forum, Trans Tech Publications Inc., 2012, 711, pp.129-133. ⟨10.4028/www.scientific.net/MSF.711.129⟩. ⟨hal-00661512⟩
  • Stéphane Biondo, Mihai Lazar, Laurent Ottaviani, Wilfried Vervisch, Vincent Le Borgne, et al.. 4H-silicon carbide thin junction based ultraviolet photodetectors. Thin Solid Films, Elsevier, 2012, in press. ⟨10.1016/j.tsf.2011.12.079⟩. ⟨hal-00747356⟩
  • Stéphane Biondo, Laurent Ottaviani, Mihai Lazar, Dominique Planson, Julian Duchaine, et al.. 4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩. ⟨hal-02275699⟩
  • Mihai Lazar, François Jomard, Duy Minh Nguyen, Christophe Raynaud, Gontran Pâques, et al.. SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩. ⟨hal-02166414⟩
  • Fabien Thion, Karine Isoird, Dominique Planson, Marie-Laure Locatelli, Hui Ding. Simulation and design of junction termination structures for diamond Schottky diodes. Diamond and Related Materials, Elsevier, 2011, 20 (5-6), pp.729-732. ⟨10.1016/j.diamond.2011.03.011⟩. ⟨hal-00661491⟩
  • Duy Minh Nguyen, Christophe Raynaud, Nicolas Dheilly, Mihai Lazar, Dominique Tournier, et al.. Experimental determination of impact ionization coefficients in 4H-SiC. Diamond and Related Materials, Elsevier, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩. ⟨hal-00661429⟩
  • Rami Mousa, Dominique Planson, Hervé Morel. Characterization and VHDL-AMS modeling of SiC-JFET transistor. European Journal of Electrical Engineering, Lavoisier, 2011, 14 (1), pp.7-27. ⟨10.3166/EJEE.14.7-27⟩. ⟨hal-00747438⟩
  • Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of high temperature power electronics. Materials Science and Engineering: B, Elsevier, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩. ⟨hal-00597432⟩
  • Gontran Pâques, Sigo Scharnholz, Nicolas Dheilly, Dominique Planson, Rik de Doncker. High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2011, 32 (10), pp.1421 - 1423. ⟨10.1109/LED.2011.2163055⟩. ⟨hal-00661495⟩
  • Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. Advanced Materials Research, Trans Tech Publications, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩. ⟨hal-00799902⟩
  • Duy Minh Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, et al.. Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection. Materials Science Forum, Trans Tech Publications Inc., 2011, 679-680, pp.567-570. ⟨10.4028/www.scientific.net/MSF.679-680.567⟩. ⟨hal-02168909⟩
  • Maxime Berthou, Philippe Godignon, Josep Montserrat, José Millán, Dominique Planson. Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier. Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2011, 40 (12), pp.2355 - 2362. ⟨10.1007/s11664-011-1774-y⟩. ⟨hal-01627572⟩
  • Nicolas Dheilly, Gontran Pâques, Sigo Scharnholz, Pascal Bevilacqua, Christophe Raynaud, et al.. Optical triggering of SiC thyristors using UV LEDs. Electronics Letters, IET, 2011, 47 (7), pp.459 - 460. ⟨10.1049/el.2010.7041⟩. ⟨hal-00661435⟩
  • Nicolas Dheilly, Gontran Pâques, Dominique Planson, Pascal Bevilacqua, Sigo Scharnholz. Optical triggering of 4H-SiC thyristors with a 365 nm UV LED. Materials Science Forum, Trans Tech Publications Inc., 2011, 679-680, pp.690-693. ⟨10.4028/www.scientific.net/MSF.679-680.690⟩. ⟨hal-00661458⟩
  • Gontran Pâques, Sigo Scharnholz, Jens-Peter Konrath, Nicolas Dheilly, Dominique Planson, et al.. Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height. Materials Science Forum, Trans Tech Publications Inc., 2011, 679-680, pp.473-476. ⟨10.4028/www.scientific.net/MSF.679-680.473⟩. ⟨hal-00661475⟩
  • Gontran Pâques, Nicolas Dheilly, Dominique Planson, Rik de Doncker, Sigo Scharnholz. Graded Etched Junction Termination for SiC Thyristors. Materials Science Forum, Trans Tech Publications Inc., 2011, 679-680, pp.457-460. ⟨10.4028/www.scientific.net/MSF.679-680.457⟩. ⟨hal-00661479⟩
  • Pierre-Nicolas Volpe, Pierre Muret, Julien Pernot, Franck Omnès, Tokuyuki Teraji, et al.. High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer. physica status solidi (a), Wiley, 2010, 207 (9), pp.2088-2092. ⟨10.1002/pssa.201000055⟩. ⟨hal-00739492⟩
  • Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson. A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT. Materials Science Forum, Trans Tech Publications Inc., 2010, 645-648, pp.1155-1158. ⟨10.4028/WWW.scientific.net/MSF.645-648.1155⟩. ⟨hal-02168907⟩
  • Christophe Raynaud, Dominique Tournier, Hervé Morel, Dominique Planson. Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices. Diamond and Related Materials, Elsevier, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩. ⟨hal-02186368⟩
  • Pierre-Nicolas Volpe, Pierre Muret, Julien Pernot, Franck Omnès, Tokuyuki Teraji, et al.. Extreme dielectric strength in boron doped homoepitaxial diamond. Applied Physics Letters, American Institute of Physics, 2010, 97 (22), pp.223501. ⟨10.1063/1.3520140⟩. ⟨hal-00734714⟩
  • Pierre Lefranc, Dominique Planson, Hervé Morel, Dominique Bergogne. Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT). Solid-State Electronics, Elsevier, 2009, 53 (9), pp.944-954. ⟨10.1016/j.sse.2009.06.009⟩. ⟨hal-00476201⟩
  • Christophe Raynaud, Duy Minh Nguyen, Pierre Brosselard, Amador Pérez-Tomás, Dominique Planson, et al.. Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses. Materials Science Forum, Trans Tech Publications Inc., 2009, 615-617, pp.671-674. ⟨10.4028/www.scientific.net/MSF.615-617.671⟩. ⟨hal-00391462⟩
  • Christophe Raynaud, Duy Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, et al.. Optical beam induced current measurements: principles and applications to SiC device characterization. physica status solidi (a), Wiley, 2009, 206 (10), pp.2273-2283. ⟨10.1002/pssa.200825183⟩. ⟨hal-00398971⟩
  • Heu Vang, Mihai Lazar, Pierre Brosselard, Christophe Raynaud, Pierre Cremilleu, et al.. Ni-Al ohmic contact to p-type 4H-SiC. Superlattices and Microstructures, Elsevier, 2006, 40 (4-6), pp.626-631. ⟨hal-00141426⟩
  • Mihai Lazar, Heu Vang, Pierre Brosselard, Christophe Raynaud, Pierre Cremilleu, et al.. Deep SiC etching with RIE. Superlattices and Microstructures, Elsevier, 2006, 40 (4-6), pp.388-392. ⟨10.1016/j.spmi.2006.06.015⟩. ⟨hal-00179458⟩
  • Bruno Allard, Gérard Coquery, Laurent Dupont, Zoubir Khatir, Mihai Lazar, et al.. Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement. J3eA, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩. ⟨hal-01702019⟩
  • Christophe Raynaud, S. Wang, Dominique Planson, Mihai Lazar, Jean-Pierre Chante. OBIC analysis for 1.3 kV 6H-SiC p(+)n planar bipolar diodes protected by Junction Termination Extension. Diamond and Related Materials, Elsevier, 2004, 13 (9), pp.1697-1703. ⟨hal-00140107⟩
  • Dominique Tournier, Phillippe Godignon, José Millan, Dominique Planson, Jean-Pierre Chante, et al.. On-Chip Temperature Monitoring of a SiC Current Limiter. Materials Science Forum, Trans Tech Publications Inc., 2004, 457-460, pp.1021-1024. ⟨10.4028/www.scientific.net/MSF.457-460.1021⟩. ⟨hal-02966528⟩
  • Dominique Tournier, Xavier Jordà, Philippe Godignon, Dominique Planson, Jean-Pierre Chante, et al.. Optimal layout for 6H-SiC VJFET controlled current limiting device. Diamond and Related Materials, Elsevier, 2003, 12 (3-7), pp.1220-1223. ⟨hal-00140113⟩
  • Mihai Lazar, Christophe Raynaud, Dominique Planson, Jean-Pierre Chante, Marie-Laure Locatelli, et al.. Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers. Journal of Applied Physics, American Institute of Physics, 2003, 94 (5), pp.2992-2998. ⟨hal-00140110⟩
  • Dominique Tournier, Philippe Godignon, Josep Montserrat, Dominique Planson, Christophe Raynaud, et al.. A 4H-SiC high-power-density VJFET as controlled current limiter. IEEE Transactions on Industry Applications, Institute of Electrical and Electronics Engineers, 2003, 39 (5), pp.1508-1513. ⟨hal-00140109⟩
  • Volker Zorngiebel, Sigo Scharnholz, Emil Spahn, Pierre Brosselard, N. Arssi, et al.. Fabrication and Characterisation of High Voltage SiC-Thyristors. Materials Science Forum, Trans Tech Publications Inc., 2003, 433-436, pp.883-886. ⟨10.4028/www.scientific.net/MSF.433-436.883⟩. ⟨hal-02489305⟩
  • Dominique Tournier, Phillippe Godignon, Josep Montserrat, Dominique Planson, Christophe Raynaud, et al.. Characterization of a 4H-SiC High Power Density Controlled Current Limiter. Materials Science Forum, Trans Tech Publications Inc., 2003, 433-436, pp.871-874. ⟨10.4028/www.scientific.net/MSF.433-436.871⟩. ⟨hal-02458100⟩
  • K. Isoird, Mihai Lazar, Marie-Laure Locatelli, Christophe Raynaud, Dominique Planson, et al.. Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization. Materials Science Forum, Trans Tech Publications Inc., 2002, 389-393, pp.1289-1292. ⟨10.4028/www.scientific.net/MSF.389-393.1289⟩. ⟨hal-02151720⟩
  • Laurent Ottaviani, Mihai Lazar, Marie-Laure Locatelli, Dominique Planson, Jean-Pierre Chante, et al.. Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments. Materials Science and Engineering: B, Elsevier, 2002, 90 (3), pp.301-308. ⟨10.1016/S0921-5107(02)00002-8⟩. ⟨hal-00140116⟩
  • Dominique Tournier, Phillippe Godignon, Josep Montserrat, Dominique Planson, Jean-Pierre Chante, et al.. Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter. Materials Science Forum, Trans Tech Publications Inc., 2002, 389-393, pp.1243-1246. ⟨10.4028/www.scientific.net/MSF.389-393.1243⟩. ⟨hal-02151713⟩
  • F. Nallet, Phillippe Godignon, Dominique Planson, Christophe Raynaud, Jean-Pierre Chante. Realization of a High-Current and Low RON 600V Current-Limiting Device. Materials Science Forum, Trans Tech Publications Inc., 2002, 389-393, pp.1247-1250. ⟨10.4028/www.scientific.net/MSF.389-393.1247⟩. ⟨hal-02151717⟩
  • Dominique Tournier, Phillippe Godignon, Josep Montserrat, Dominique Planson, Jean-Pierre Chante, et al.. Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET. Materials Science Forum, Trans Tech Publications Inc., 2002, 389-393, pp.1403-1406. ⟨10.4028/www.scientific.net/MSF.389-393.1403⟩. ⟨hal-02151712⟩
  • Mihai Lazar, Christophe Raynaud, Dominique Planson, Marie-Laure Locatelli, K. Isoird, et al.. A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects. Materials Science Forum, Trans Tech Publications Inc., 2002, 389-393, pp.827-830. ⟨10.4028/www.scientific.net/MSF.389-393.827⟩. ⟨hal-02151714⟩
  • Karine Isoird, Mihai Lazar, Laurent Ottaviani, Marie-Laure Locatelli, Christophe Raynaud, et al.. Study of 6H-SiC high voltage bipolar diodes under reverse biases. Applied Surface Science, Elsevier, 2001, 184 (1-4), pp.477-482. ⟨10.1016/S0169-4332(01)00537-2⟩. ⟨hal-00140118⟩
  • F. Nallet, Dominique Planson, Philippe Godignon, Marie-Laure Locatelli, Mihai Lazar, et al.. Experimental characterization of a 4H-SiC high voltage current limiting device. Applied Surface Science, Elsevier, 2001, 184 (1-4), pp.404-407. ⟨hal-00140117⟩
  • Mihai Lazar, Laurent Ottaviani, Marie-Laure Locatelli, Christophe Raynaud, Dominique Planson, et al.. High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing. Materials Science Forum, Trans Tech Publications Inc., 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩. ⟨hal-02151710⟩
  • N. Savkina, A. Lebedev, D. Davydov, A. Strel'Chuk, A. Tregubova, et al.. Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy. Materials Science and Engineering: B, Elsevier, 2000, 77 (1), pp.50-54. ⟨hal-00140585⟩
  • Mihai Lazar, Laurent Ottaviani, Marie-Laure Locatelli, Dominique Planson, Bruno Canut, et al.. Improved Annealing Process for 6H-SiC p+-n Junction Creation by Al Implantation. Materials Science Forum, Trans Tech Publications Inc., 2000, 338-342, pp.921-924. ⟨10.4028/www.scientific.net/MSF.338-342.921⟩. ⟨hal-02275720⟩
  • Karine Isoird, Laurent Ottaviani, Marie-Laure Locatelli, Dominique Planson, Christophe Raynaud, et al.. Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation. Materials Science Forum, Trans Tech Publications Inc., 2000, 338-342, pp.1363-1366. ⟨10.4028/www.scientific.net/MSF.338-342.1363⟩. ⟨hal-02281030⟩
  • Laurent Ottaviani, Marie-Laure Locatelli, Dominique Planson, Karine Isoird, Jean-Pierre Chante, et al.. P-N Junction creation in 6H-SiC by aluminum implantation. Materials Science and Engineering: B, Elsevier, 1999, 61 (2), pp.424-428. ⟨hal-00141527⟩
  • Dominique Planson, Marie-Laure Locatelli, F. Lanois, Jean-Pierre Chante. Design of a 600 V silicon carbide vertical power MOSFET. Materials Science and Engineering: B, Elsevier, 1999, 61 (2), pp.497-501. ⟨hal-00141536⟩
  • S. Berberich, Philippe Godignon, José Millán, Dominique Planson, H. Hartnagel, et al.. Electrical characterisation of MNOS devices on p-type 6H-SiC. Diamond and Related Materials, Elsevier, 1999, 8 (2-5), pp.305-308. ⟨hal-00141547⟩
  • Laurent Ottaviani, Dominique Planson, Marie-Laure Locatelli, Jean-Pierre Chante, B. Canut, et al.. Post-Implantation Annealing of Aluminium in 6H-SiC. Materials Science Forum, Trans Tech Publications Inc., 1998, 264-268, pp.709-712. ⟨10.4028/www.scientific.net/MSF.264-268.709⟩. ⟨hal-02281029⟩
  • A. Lebedev, S. Ortolland, Christophe Raynaud, Marie-Laure Locatelli, Dominique Planson, et al.. Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures. Semiconductors, 1997, 31 (7), pp.735-737. ⟨hal-00141601⟩
  • Dominique Planson, Marie-Laure Locatelli, S. Ortolland, Jean-Pierre Chante, H. Mitlehner, et al.. Periphery protection for silicon carbide devices: State of the art and simulation. Materials Science and Engineering: B, Elsevier, 1997, 46 (1-3), pp.210-217. ⟨hal-00141603⟩
  • B. Canut, S. Ramos, J. Roger, Jean-Pierre Chante, Marie-Laure Locatelli, et al.. Damage annealing and dopant activation in Al ion implanted alpha-SiC. Materials Science and Engineering: B, Elsevier, 1997, 46 (1-3), pp.267-270. ⟨10.1016/S0921-5107(96)01986-1⟩. ⟨hal-00141605⟩
  • F. Lanois, P. Lassagne, Dominique Planson, Marie-Laure Locatelli. Angle etch control for silicon carbide power devices. Applied Physics Letters, American Institute of Physics, 1996, 69 (2), pp.236-238. ⟨hal-00141623⟩

Conference papers125 documents

  • Joao Oliveira, Ali Alhoussen, Florent Loiselay, Hervé Morel, Dominique Planson. Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications. EPE 2021 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨hal-03260519⟩
  • Besar Asllani, Hervé Morel, Pascal Bevilacqua, Dominique Planson. Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor. EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩. ⟨hal-02945919⟩
  • Joao Oliveira, Hervé Morel, Dominique Planson, Florent Loiselay. Analysis of Parasitic Elements in Power Modules Based on GaN Components. PCIM Europe 2020, Jul 2020, Nuremberg, Germany. ⟨hal-02945892⟩
  • Joao Oliveira, Florent Loiselay, Hervé Morel, Dominique Planson. Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs. EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩. ⟨hal-02945913⟩
  • Besar Asllani, Alberto Castellazzi, Oriol Salvado, Asad Fayyaz, Hervé Morel, et al.. V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate. IRPS, Mar 2019, Monterey, CA, United States. ⟨hal-02099781⟩
  • Besar Asllani, Dominique Planson, Hervé Morel, T Lagier. Static characteristics of 5 kV SiC BJTs and Darlington’s. International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan. ⟨hal-02428513⟩
  • Camille Sonneville, Dominique Planson, Luong Viêt Phung, Besar Asllani, Pascal Bevilacqua. Effects of the laser beam size on the Optical Beam Induced Current (OBIC) for the study of Wide Band Gap (WBG) Semi-Conductor Devices. Workshop on Compound Semiconductor Devices and Integrated Circuits 2019 (WOCSDICE 2019), Jun 2019, Cabourg, France. ⟨hal-02164000⟩
  • Camille Sonneville, Dominique Planson, Luong Viêt Phung, Pascal Bevilacqua, Besar Asllani. Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC). International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan. pp.Mo-P-23. ⟨hal-02428502⟩
  • Besar Asllani, A Castellazzi, Dominique Planson, Hervé Morel. Subthreshold Drain current hysteresis of planar SiC MOSFETs. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04. ⟨hal-02428531⟩
  • Ralf Hassdorf, Sigo Scharnholz, Dirk Bauersfeld, Bertrand Vergne, Luong Viêt Phung, et al.. Towards SiC thyristors with amplifying gate design. Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France. ⟨hal-02983373⟩
  • Besar Asllani, Dominique Planson, Pascal Bevilacqua, J Fonder, B Choucoutou, et al.. Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2. ⟨hal-01985994⟩
  • Teng Zhang, Christophe Raynaud, Dominique Planson. Mesure et analyse de la hauteur de barrière des contacts Schottky Mo sur SiC-4H. Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France. ⟨hal-02983328⟩
  • Dominique Planson, Luong-Viet Phung, Besar Asllani, Pascal Bevilacqua, Hassan Hamad, et al.. Experimental and simulation results of OBIC Technique Applied to Wide Bandgap Semiconductors. e-MRS Fall Meeting, Sep 2018, Varsovie, Poland. ⟨hal-02116919⟩
  • B Choucoutou, Besar Asllani, L Phung, J Fonder, Dominnique Tournier, et al.. Conception and high temperature characterization of 10 kV 50 A 4H-SiC PiN diodes. European Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom. ⟨hal-02004841⟩
  • Besar Asllani, Hervé Morel, Dominique Planson, Asad Fayyaz, Alberto Castellazzi. SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation. ESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩. ⟨hal-01984359⟩
  • Jean-François Mogniotte, Christophe Raynaud, Mihai Lazar, Bruno Allard, Dominique Planson. SiC lateral Schottky diode technology for integrated smart power converter. 2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩. ⟨hal-01864545⟩
  • Teng Zhang, Christophe Raynaud, Dominique Planson. Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. ⟨hal-02004837⟩
  • Besar Asllani, Pascal Bevilacqua, A. Zaoui, G Grosset, Dominique Planson, et al.. High-Voltage SiC-JFET Fabrication and Full Characterization. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5. ⟨hal-02428523⟩
  • S Scharnholz, R Hassdorf, D Bauersfeld, B Vergne, L Phung, et al.. Technology Route towards SiC Thyristor Devices with Amplifying Gate Design. Compound Semiconductor Week 2017, May 2017, Berlin, Germany. ⟨hal-03103484⟩
  • Ralf Hassdorf, Sigo Scharnholz, Dirk Bauersfeld, Bertrand Vergne, Viêt Luong, et al.. Emergence of SiC Thyristors Featuring Amplifying Gate Design. International Conference on Silicon Carbide and Related Materials, Sep 2017, Washington DC, United States. ⟨hal-02004843⟩
  • Besar Asllani, J Fonder, Pascal Bevilacqua, Dominique Planson, L. Phung, et al.. Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodes. International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington DC, United States. ⟨hal-02132576⟩
  • Dominique Planson, Besar Asllani, Hassan Hamad, Marie-Laure Locatelli, Lumei Wei, et al.. Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode. International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4. ⟨hal-02138767⟩
  • Selsabil Sejil, Loïc Lalouat, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy. ECSCRM'16, Sep 2016, Halkidiki, Greece. ⟨hal-02138729⟩
  • Dominique Planson, Hassan Hamad. OBIC Technique Applied to Wide Bandgap Semiconductors. 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC ‐ Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2016, Aveiro, Portugal. ⟨hal-01388036⟩
  • Beverley Choucoutou, Luong Viet Phung, Pierre Brosselard, Michel Mermet-Guyennet, Dominique Planson. Étude en simulation et conception d'un transistor bipolaire (BJT) 10 kV en 4H-SiC. Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France. ⟨hal-01361668⟩
  • Julien Pezard, V. Souliere, Mihai Lazar, Naoufel Haddour, François Buret, et al.. Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections. ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52. ⟨hal-02138738⟩
  • Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Dominique Planson. Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method. CAS, Oct 2015, Sinaia, Romania. ⟨10.1109/SMICND.2015.7355226⟩. ⟨hal-01388024⟩
  • Bertrand Vergne, Sigo Scharnholz, Dominique Planson, Dominique Tournier, Pierre Brosselard. Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductors. International Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic. ⟨hal-02428642⟩
  • Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, S Sharnholz, Bertrand Vergne, et al.. Determination of 4H-SiC ionization rates using OBIC based on two-photon absorption. International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy. ⟨hal-02138523⟩
  • Selsabil Sejil, Mihai Lazar, Davy Carole, Christian Brylinski, Dominique Planson, et al.. Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions. Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States. ⟨hal-02428659⟩
  • Mihai Lazar, Davy Carole, Christophe Raynaud, Gabriel Ferro, Selsabil Sejil, et al.. Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices. CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩. ⟨hal-01388019⟩
  • Tony Abi-Tannous, Maher Soueidan, G. Ferro, Mihai Lazar, Christophe Raynaud, et al.. Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase. ICSCRM, Oct 2015, Giardini Naxos, Italy. ⟨hal-02138520⟩
  • T. Nguyen-Bui, Mihai Lazar, Jean-Louis Augé, Hervé Morel, L. Phung, et al.. Vertical termination filled with adequate dielectric for SiC devices in HVDC applications. International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy. ⟨hal-02138529⟩
  • A Souguir-Aouani, N. Thierry-Jebali, D Tournier, A Yvon, E Collard, et al.. Study and optimization of a 600V Pseudo-vertical GaN-on-silicon rectifier by finite elements simulation. ICSCRM 2015, Oct 2015, Giardini Naxos, Italy. pp.Mo-P-44. ⟨hal-02138522⟩
  • Houssam Arbess, Karine Isoird, Dominique Planson, Luong Viet Phung. Optimisation de la terminaison d'une diode Schottky diamant haute tension. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065274⟩
  • Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065307⟩
  • Thibaut Chailloux, Cyril Calvez, Dominique Tournier, Dominique Planson. Characterization and comparison of 1.2 kV SiC power devices from cryogenic to high temperature. ECSCRM'14, Sep 2014, Grenoble, France. ⟨hal-02132486⟩
  • Tony Abi Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Bérangère Toury, et al.. On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealing. ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63. ⟨hal-02428741⟩
  • Tony Abi Tannous, Maher Soueidan, Gabriel Ferro, Berangere Toury-Pierre, Mihai Lazar, et al.. Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAX. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065327⟩
  • Marc Petit, Seddik Bacha, Xavier Guillaud, Hervé Morel, Dominique Planson, et al.. Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065154⟩
  • Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Sigo Scharnholz, Dominique Planson. Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current. ECSCRM'14, Sep 2014, Grenoble, France. pp.MO2-IP-08. ⟨hal-02133683⟩
  • Selsabil Sejil, Farah Laariedh, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. 4H-SiC P-N junctions realized by VLS for JFET lateral structures. ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61. ⟨hal-02133686⟩
  • Hassan Hamad, Pascal Bevilacqua, Christophe Raynaud, Dominique Planson. Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes. 2014 IEEE PRIME, Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872761⟩. ⟨hal-01388043⟩
  • Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantinos Vamvoukakis, et al.. 4H-SiC VJFETs with Self-Aligned Contacts. ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75. ⟨hal-02133681⟩
  • Thibaut Chailloux, Cyril Calvez, Dominique Tournier, Dominique Planson. Etude de différents transistors de puissance SiC 1.2kV des températures cryogéniques aux hautes températures. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065281⟩
  • Sigo Scharnholz, Luong Viêt Phung, Dominique Tournier, Bertrand Vergne, Ralf Hassdorf, et al.. Conception de thyristors SiC permettant l'étude de l'amplification interne de l'allumage. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065352⟩
  • Dominique Planson, Pierre Brosselard, Karine Isoird, Mihai Lazar, Luong Viêt Phung, et al.. Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects. CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩. ⟨hal-01388002⟩
  • Thibault Chailloux, Cyril Calvez, Pascal Bevilacqua, Dominique Planson, Dominique Tournier. Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical Characteristics. HiTEN'13, Jul 2013, Oxford, United Kingdom. ⟨hal-03326669⟩
  • Khalil El Falahi, Stanislas Hascoët, Cyril Buttay, Pascal Bevilacqua, Luong Viet Phung, et al.. High temperature, Smart Power Module for aircraft actuators. HiTEN'13, Jul 2013, Oxford, United Kingdom. ⟨hal-00874666⟩
  • Wissam Sabbah, Raphaël Riva, Stanislas Hascoët, Cyril Buttay, Stephane Azzopardi, et al.. Evaluation of silver-sintering die attach. 7th CIPS, Mar 2012, Nuremberg, Germany. pp.237-243. ⟨hal-00707733⟩
  • Amandine Masson, Wissam Sabbah, Raphaël Riva, Cyril Buttay, Stephane Azzopardi, et al.. Report de puce par frittage d'argent - mise en oeuvre et analyse. 14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61). ⟨hal-00729156⟩
  • Dominique Planson, Pierre Brosselard, Dominique Tournier, L Phung, C. Brylinski. Towards Very High Voltage SiC Power Devices. PRiME 2012-ECS, Oct 2012, Honolulu-Hawaii, United States. ⟨10.1149/05003.0425ecst⟩. ⟨hal-02116906⟩
  • Jean-François Mogniotte, Dominique Tournier, Pascal Bevilacqua, Philippe Godignon, Dominique Planson. Design of an integrated power converter in Wide Band Gap for harsh environments. Conference on Integrated Power Electronics systems, Mar 2012, Nuremberg, Germany. ⟨hal-02124203⟩
  • F Chevalier, G Grosset, L Dupuy, Dominique Tournier, Dominique Planson, et al.. A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET. HETECH, Nov 2012, Barcelone, France. ⟨hal-01113179⟩
  • Stanislas Hascoët, Cyril Buttay, Dominique Planson, Rodica Chiriac, Amandine Masson. Pressureless Silver Sintering Die-Attach for SiC Power Devices. CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p. ⟨hal-00759987v2⟩
  • D Nguyen, R Huang, L Phung, Maxime Berthou, P Godignon, et al.. Edge termination design improvements for 10 kV 4H-SiC bipolar diodes. European Conference on Silicon Carbide and Related Materials 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p, ⟨10.4028/www.scientific.net/MSF.740-742.609⟩. ⟨hal-03316271⟩
  • Bertrand Vergne, Gontran Pâques, Claudia Maurer, Sigo Scharnholz, Pierre Brosselard, et al.. PASChAC, système automatisé de caractérisation de composants sur wafer. Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France. ⟨hal-02282734⟩
  • Fabien Thion, Karine Isoird, Dominique Planson, Marie-Laure Locatelli, Henri Schneider, et al.. Réalisation et caractérisation de diodes Schottky en diamant monocristallin protégées par plaque de champ sur Si3N4. 14ème EPF, Jul 2012, Bordeaux, France. 4 p. ⟨hal-01005917⟩
  • Mihai Lazar, François Jomard, Duy Minh Nguyen, Christophe Raynaud, Gontran Pâques, et al.. SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements. ICSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747300⟩
  • Farah Laariedh, Mihai Lazar, Pierre Cremilleu, Jean-Louis Leclercq, Dominique Planson. Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.169-173, ⟨10.4028/www.scientific.net/MSF.711.169⟩. ⟨hal-00661507⟩
  • Nicolas Dheilly, Gontran Pâques, Sigo Scharnholz, Dominique Planson. Pulse characterization of optically triggered SiC thyristors. International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM'2011), Philipp Neudeck, Sep 2011, Cleveland, United States. pp.FR-1A-3. ⟨hal-00747341⟩
  • Duy Minh Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, et al.. OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747298⟩
  • Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, et al.. 600 V PiN diodes fabricated using on-axis 4H silicon carbide. International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩. ⟨hal-00747295⟩
  • Christian Brylinski, Dominique Planson. Perspectives on SiC and III-N Based Devices for Power Electronics. 220th ECS Meeting, The Electrochemical Society, Oct 2011, Boston, United States. pp.139-152, ⟨10.1149/1.3631492⟩. ⟨hal-02865456⟩
  • Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD. ⟨hal-00661500⟩
  • Nicolas Dheilly, Gontran Pâques, Sigo Scharnholz, Dominique Planson. Parallel and serial association of SiC light triggered thyristors. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. ⟨hal-00661520⟩
  • Stéphane Biondo, Mihai Lazar, Laurent Ottaviani, Wilfried Vervisch, Olivier Palais, et al.. Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩. ⟨hal-00661511⟩
  • Laurent Ottaviani, Stéphane Biondo, Mihai Lazar, Wilfried Vervisch, Julian Duchaine, et al.. Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics. WOCSDICE, May 2011, Catania, Italy. pp.181. ⟨hal-00661522⟩
  • Stéphane Biondo, Laurent Ottaviani, Mihai Lazar, Dominique Planson, Julian Duchaine, et al.. 4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747301⟩
  • Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson, Bruno Allard. SiC BJT driver applied to a 2 kW inverter: Performances and limitations. 6th CIPS, Mar 2010, Nuremberg, Germany. ⟨hal-00579223⟩
  • Duy Minh Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, et al.. Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection. CSCRM, Aug 2010, Oslo, Norway. ⟨hal-00661470⟩
  • Mihai Lazar, Fabrice Enoch, Farah Laariedh, Dominique Planson, Pierre Brosselard. Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State. CSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩. ⟨hal-00661443⟩
  • Gontran Pâques, Sigo Scharnholz, Jens-Peter Konrath, Bertrand Vergne, Nicolas Dheilly, et al.. Réalisation de Diodes SiC Simples pour l'Etude de Passivations. 13ème EPF, Jun 2010, Saint-Nazaire, France. ⟨hal-00618701⟩
  • Nicolas Dheilly, Dominique Planson, Gontran Pâques, Sigo Scharnholz. Conception d'une protection périphérique originale pour composants bipolaires en carbure de silicium (SiC). 13ème EPF, Jun 2010, Saint-Nazaire, France. ⟨hal-00618709⟩
  • Bertrand Vergne, Gontran Pâques, Jens-Peter Konrath, Sigo Scharnholz, Nicolas Dheilly, et al.. Chambre à Vide de Caractérisation Haute Tension de Composants Semiconducteurs Nus. 13ème EPF, Jun 2010, Saint-Nazaire, France. ⟨hal-00618684⟩
  • Fabien Thion, Karine Isoird, Dominique Planson, Marie-Laure Locatelli. Protection périphérique pour composants de puissance en diamant. 13ème EPF, Jun 2010, Saint-Nazaire, France. 4p. ⟨hal-00618708⟩
  • Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson. A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT. CSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩. ⟨hal-00496976⟩
  • Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of High Temperature Power Electronics. Microtherm, Jun 2009, Lodz, Poland. pp.8-17. ⟨hal-00413349⟩
  • Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Nicolas Dheilly, Hervé Morel, et al.. SiC Power Semiconductor Devices for new Applications in Power Electronics. 13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩. ⟨hal-00373016⟩
  • Dominique Bergogne, Hervé Morel, Dominique Tournier, Bruno Allard, Dominique Planson, et al.. Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2. ⟨hal-00372982⟩
  • Rami Mousa, Dominique Planson, Hervé Morel, Bruno Allard, Christophe Raynaud. Modeling and high temperature characterization of SiC-JFET. IEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩. ⟨hal-00369420⟩
  • Dominique Bergogne, Dominique Tournier, Rami Mousa, Mohsen Shafiee Khoor, Dominique Planson, et al.. SiC JFET for high temperature power switches. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4. ⟨hal-00373058⟩
  • Dominique Tournier, Dominique Bergogne, Asif Hamoud, Dominique Planson, Rami Mousa, et al.. Current limiting with SiC JFET structures. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5. ⟨hal-00373046⟩
  • Christophe Raynaud, D Nguyen, P Brosselard, A Pérez-Tomás, Dominique Planson, et al.. Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analyses. European Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain. ⟨hal-03331775⟩
  • Tarek Salah, Damien Risaletto, Christophe Raynaud, Kamel Besbes, Dominique Bergogne, et al.. Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies. ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩. ⟨hal-02958620⟩
  • Hervé Morel, Dominique Bergogne, Dominique Planson, Bruno Allard, Régis Meuret. New Applications in Power Electronics Based on SiC Power Devices. ICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩. ⟨hal-02958610⟩
  • D Nguyen, Christophe Raynaud, M Lazar, H Vang, Dominique Planson. Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC. ICSCRM'2007, Oct 2007, Otsu, Japan. ⟨hal-02961607⟩
  • Mihai Lazar, Heu Vang, Pierre Brosselard, Christophe Raynaud, Pierre Cremilleu, et al.. Deep SiC etching with RIE. 2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. pp.3886392, ⟨10.1016/j.spmi.2006.06.015⟩. ⟨hal-03305997⟩
  • Heu Vang, Mihai Lazar, Pierre Brosselard, Christophe Raynaud, Pierre Cremilleu, et al.. Ni-Al Ohmic contact to p-type 4H-SiC. 2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩. ⟨hal-03316263⟩
  • Erwan Oliviero, Mihai Lazar, Heu Vang, Christiane Dubois, Pierre Cremilleu, et al.. Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC. CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.611-614, ⟨10.4028/www.scientific.net/MSF.556-557.611⟩. ⟨hal-00368931⟩
  • Dominique Bergogne, Pascal Bevilacqua, Sabrine M'Rad, Dominique Planson, Hervé Morel, et al.. 300 °C operating junction temperature inverter leg investigations. EPE, Sep 2005, Dresden, Germany. ⟨hal-00413402⟩
  • Dominique Tournier, Miquel Vellvehi, Philippe Godignon, Josep Montserrat, Dominique Planson, et al.. Current sensing for SiC Power Devices. CSCRM, Sep 2005, Pittsburgh, PA, United States. pp.1215-1218, ⟨10.4028/www.scientific.net/MSF.527-529.1215⟩. ⟨hal-00391433⟩
  • Dominique Planson, Dominique Tournier, Jean-Pierre Chante, Pascal Bevilacqua, Christophe Raynaud, et al.. Silicon Carbide Controlled Current Limiter, Current Limitation Strategies, Foreseen Applications and Benefits. International Power Electronics and Motion Control (IPEMC'04), Aug 2004, Xi'an, China. ⟨hal-02468376⟩
  • Mihai Lazar, C Jacquier, Ch Dubois, Christophe Raynaud, G Ferro, et al.. P-type SiC layers formed by VLS induced selective epitaxial growth. European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy. ⟨hal-02953086⟩
  • Pierre Brosselard, Thierry Bouchet, Dominique Planson, Sigo Scharnholz, Gontran Pâques, et al.. A 3.5 kV thyristor in 4H-SiC with a JTE periphery. European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy. ⟨hal-02953080⟩
  • Dominique Tournier, Philippe Godignon, José Millán, Jean-Pierre Chante, Dominique Planson, et al.. On chip temperature monitoring of a SiC current limiter. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. ⟨hal-02949618⟩
  • M Lazar, G Cardinali, C Raynaud, A Poggi, Dominique Planson, et al.. The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study.. International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France. ⟨hal-02941715⟩
  • Pierre Brosselard, Volker Zorngiebel, Dominique Planson, Sigo Scharnholz, J.-P Chante, et al.. Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. ⟨hal-02503456⟩
  • Christophe Raynaud, M. Lazar, Dominique Planson, J.-P Chante, Z. Sassi. Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. ⟨hal-02498145⟩
  • Pierre Brosselard, Dominique Planson, Sigo Scharnholz, V. Zorngiebel, Mihai Lazar, et al.. Design and simulation of a planar anode GTO thyristor on SiC. CAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩. ⟨hal-00410085⟩
  • Pierre Lefranc, Dominique Bergogne, Dominique Planson, Bruno Allard, Hervé Morel, et al.. Active clamping of IGBT: capacitor replaces TRANSIL diodes. 10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France. ⟨hal-02497603⟩
  • Marie-Laure Locatelli, Karine Isoird, Sorin Dinculescu, Vincent Bley, Thierry Lebey, et al.. Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment. 10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France. ⟨hal-02492270⟩
  • Dominique Planson, J.P. Chante, M. Lazar, P. Brosselard, Christophe Raynaud, et al.. Electrothermal simulations of silicon carbide current limiting devices. 2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩. ⟨hal-02498210⟩
  • J.-P Chante, Dominique Planson, Christophe Raynaud, Marie-Laure Locatelli, M. Lazar, et al.. Silicon Carbide specific components for power electronics system protection. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. ⟨hal-02503449⟩
  • D Tournier, P. Godignon, Dominique Planson, F. Nallet, J. Millán, et al.. Current limitation with SiC devices. 10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France. ⟨hal-02497590⟩
  • N. Daval, F Templier, F. Letertre, Dominique Planson, Léa Cioccio, et al.. SiC On Insulator as substrate for power Schottky diodes. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden. ⟨hal-02464356⟩
  • F. Nallet, P. Godignon, Dominique Planson, Christophe Raynaud, J.P. Chante. Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device. 14th International Symposium on Power Semiconductor Devices and ICs, Jun 2002, Sante Fe, United States. pp.209-212, ⟨10.1109/ISPSD.2002.1016208⟩. ⟨hal-02471269⟩
  • François Templier, Nicolas Daval, Léa Di Cioccio, Daniel Bourgeat, Fabrice Letertre, et al.. A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates. 2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K7.9⟩. ⟨hal-02298409⟩
  • S.R. Wang, Christophe Raynaud, Dominique Planson, Mihai Lazar, Jean-Pierre Chante. OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden. ⟨hal-02464381⟩
  • Volker Zorngiebel, S. Scharnholz, E. Spahn, P Brosselard, Jean-Pierre Chante, et al.. Fabrication and Characterisation of High Voltage SiC-Thyristors. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden. ⟨hal-02485104⟩
  • Dominique Tournier, Philippe Godignon, Josep Montserrat, Dominique Planson, Christophe Raynaud, et al.. A 4H-SiC high-power-density VJFET as controlled current limiter. Industry Applications Society (IAS'02), Oct 2002, Pittsburgh (Pennsylvania), United States. pp.2248-2251. ⟨hal-02477074⟩
  • Roberta Nipoti, Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Gian Cardinali, et al.. Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC. 2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩. ⟨hal-02485106⟩
  • Dominique Tournier, Xavier Jorda, Josep Montserrat, Dominique Planson, Christophe Raynaud, et al.. Characterization of a 4H-SiC High Power Density Controlled Current Limiter. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden. ⟨hal-02458130⟩
  • M. Lazar, Dominique Planson, K. Isoird, Marie-Laure Locatelli, Christophe Raynaud, et al.. 4H-SiC bipolar power diodes realized by ion implantation. CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352. ⟨hal-02145397⟩
  • N. Arssi, Marie-Laure Locatelli, Dominique Planson, J.P. Chante, V. Zorngiebel, et al.. Study based on the numerical simulation of a 5 kV asymmetrical 4H-SiC thyristor for high power pulses application. CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.341-344. ⟨hal-02145398⟩
  • Mihai Lazar, Karine Isoird, Laurent Ottaviani, Marie-Laure Locatelli, Christophe Raynaud, et al.. Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing. 43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States. ⟨hal-02275712⟩
  • Dominique Tournier, Phillippe Godignon, Josep Montserrat, Dominique Planson, Jean-Pierre Chante, et al.. Simulation study of a new current limiting device : a vertical alpha-SiC etched JFET - Controlled Current Limiter. ICSCRM, Oct 2001, Tsukuba, Japan. ⟨hal-02476207⟩
  • F Nallet, P Godignon, Dominique Planson, Christophe Raynaud, Jean-Pierre Chante. Realization of a High Current and Low RON 600V Current Limiting Device. International Conference on Silicon Carbide and Related Materials, Oct 2001, Tsukuba, Japan. ⟨hal-02975963⟩
  • Dominique Tournier, Phillippe Godignon, Josep Montserrat, Dominique Planson, Jean-Pierre Chante, et al.. Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET. ICSCRM, Oct 2001, Tsukuba, Japan. ⟨hal-02471274⟩
  • M. Lazar, Christophe Raynaud, Dominique Planson, Marie-Laure Locatelli, K. Isoird, et al.. A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects. ICSCRM, Oct 2001, Tsukuba, Japan. ⟨hal-02476227⟩
  • K Isoird, M Lazar, Marie-Laure Locatelli, Christophe Raynaud, Dominique Planson, et al.. Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization. ICSCRM, Oct 2001, Tsukuba, Japan. ⟨hal-02975956⟩
  • Mihai Lazar, Laurent Ottaviani, Marie-Laure Locatelli, Christophe Raynaud, Dominique Planson, et al.. High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing. European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72. ⟨hal-02151711⟩
  • F. Nallet, A. Senes, Dominique Planson, Marie-Laure Locatelli, J.P. Chante, et al.. Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications. 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings, May 2000, Toulouse, France. pp.287-290, ⟨10.1109/ISPSD.2000.856827⟩. ⟨hal-02972084⟩
  • Shan-Qi Zhao, Dominique Planson, Jean-Pierre Chante. A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS. 7th European Simulation Symposium (ESS-1995), Oct 1995, Erlangen-Nuremberg, Germany. ⟨hal-02968512⟩
  • Marie-Laure Locatelli, Sylvie Ortolland, Frédéric Lanois, Dominique Planson, Thierry Billon, et al.. Study of Silicon Carbide high voltage ability: experimental results on expitaxial-emitter and implanted-emitter diodes. International Seminar on Silicon Carbide Semiconductor and SiC-based devices, Sep 1995, Novgorod, Russia. ⟨hal-02972067⟩

Book sections2 documents

  • Christophe Raynaud, Duy Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, et al.. Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation. Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009. ⟨hal-00661529⟩
  • Marie-Laure Locatelli, Dominique Planson. Silicon carbide applications in power electronics. Robert Perret. Power Electronics Semiconductor Devices, Wiley-ISTE, pp.185-265, 2009. ⟨hal-00661525⟩