Dominique Planson

347

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Publications

	Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs Tamiris Grossl Bade , Hassan Hamad , Adrien Lambert , Hervé Morel , Dominique Planson Electronics, 2023, 12 (11), pp.2529. ⟨10.3390/electronics12112529⟩ Article dans une revue hal-04121028v1
	Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩ Article dans une revue hal-04276812v1
	Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes P. Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Hervé Morel , Dominique Planson Journal of Materials Science: Materials in Electronics, 2023, 34 (17), pp.1383. ⟨10.1007/s10854-023-10813-z⟩ Article dans une revue hal-04199489v1
	First results on 1.2 kV SiC MOSFET body diode robustness tests Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , David Trémouilles Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩ Article dans une revue hal-04282544v1
	Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy Maroun Dagher , Camille Sonneville , Georges Bremond , Dominique Planson , Eric Frayssinet physica status solidi (a), 2023, ⟨10.1002/pssa.202200841⟩ Article dans une revue hal-04111725v1
	Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , Philippe de Mierry Crystals, 2023, 13 (5), pp.713. ⟨10.3390/cryst13050713⟩ Article dans une revue hal-04099071v1
	4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Luong Viêt V Phung , Besar Asllani Materials Science Forum, 2022, 1062, pp.341-345. ⟨10.4028/p-2ch22f⟩ Article dans une revue hal-03689424v1
	Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis Alina Muravitskaya , Anna Rumyantseva , Atse Julien Eric N’dohi , Camille Sonneville , Dominique Planson Materials Science Forum, 2022, 1062, pp.293-297. ⟨10.4028/p-5p0qg2⟩ Article dans une revue hal-03702821v1
	Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Atse Julien Eric N’dohi , Hervé Morel Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩ Article dans une revue hal-03826217v1
	Capacitance temperature dependence analysis of GaN-on-Si power transistors Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Matthew Charles , Marie-Anne Jaud Energies, 2022, 15 (19), pp.7062. ⟨10.3390/en15197062⟩ Article dans une revue cea-03874112v1
	Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Hervé Morel , Luong Viet Phung Micro and Nanostructures, 2022, 172, pp.207433. ⟨10.1016/j.micrna.2022.207433⟩ Article dans une revue hal-04032160v1
	Investigation of SiC thyristors with varying amplifying gate design Sigo Scharnholz , Ralf Hassdorf , Dirk Bauersfeld , Bertrand Vergne , Luong Viêt Phung Materials Science Forum, 2022, 1062, pp.493-497. ⟨10.4028/p-ztr5d7⟩ Article dans une revue hal-03702384v1
	Edge terminations for 4H-SiC power devices: a critical issue Philippe Godignon , Josep Montserrat , José Rebollo , Dominique Planson Materials Science Forum, 2022, 1062, pp.570-575. ⟨10.4028/p-lom714⟩ Article dans une revue hal-03694757v1
	Static and switching characteristics of 10 kV-class Silicon Carbide Bipolar Junction Transistors and Darlingtons Besar Asllani , Pascal Bevilacqua , Hervé Morel , Dominique Planson , Luong Viet Phung Materials Science Forum, 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩ Article dans une revue hal-02931290v1
	Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC) Camille Sonneville , Dominique Planson , Luong Viêt Phung , Pascal Bevilacqua , Besar Asllani Materials Science Forum, 2020, 1004, pp.290. ⟨10.4028/www.scientific.net/MSF.1004.290⟩ Article dans une revue hal-02925178v1
	Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts Teng Zhang , Christophe Raynaud , Dominique Planson European Physical Journal: Applied Physics, 2019, 85 (1), pp.10102. ⟨10.1051/epjap/2018180282⟩ Article dans une revue hal-02047099v1
	High-Voltage SiC-JFET Fabrication and Full Characterization Besar Asllani , Pascal Bevilacqua , Abderrahime Zaoui , Gregory Grosset , Dominique Planson Materials Science Forum, 2019, 963, pp.688-692. ⟨10.4028/www.scientific.net/MSF.963.688⟩ Article dans une revue hal-02060228v1
	10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization Besar Asllani , Hervé Morel , Luong Viêt Phung , Dominique Planson Energies, 2019, ⟨10.3390/en12234566⟩ Article dans une revue hal-02398585v1
	Subthreshold Drain current hysteresis of planar SiC MOSFETs Besar Asllani , Alberto Castellazzi , Dominique Planson , Hervé Morel Materials Science Forum, 2019, 963, pp.184-188. ⟨10.4028/www.scientific.net/MSF.963.184⟩ Article dans une revue hal-02060341v1
	Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors Dominique Planson , Besar Asllani , Luong-Viet Phung , Pascal Bevilacqua , Hassan Hamad Materials Science in Semiconductor Processing, 2019, 94, pp.116-127. ⟨10.1016/j.mssp.2019.01.042⟩ Article dans une revue hal-02053053v1
	Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode Teng Zhang , Christophe Raynaud , Dominique Planson Materials Science Forum, 2019, 963, pp.576-579. ⟨10.4028/www.scientific.net/MSF.963.576⟩ Article dans une revue hal-02436812v1
	Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes Besar Asllani , Dominique Planson , Pascal Bevilacqua , Jean-Baptiste Fonder , Beverley Choucoutou Materials Science Forum, 2019, 963, pp.567-571. ⟨10.4028/www.scientific.net/MSF.963.567⟩ Article dans une revue hal-02060334v1
	Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode Dominique Planson , Besar Asllani , Hassan Hamad , Marie-Laure Locatelli , R Arvinte Materials Science Forum, 2018, Silicon Carbide and Related Materials 2017, 924, pp.577-580. ⟨10.4028/www.scientific.net/MSF.924.577⟩ Article dans une revue hal-01818806v1
	Silicon Carbide Technology of MESFET-Based Power Integrated Circuits Jean-François Mogniotte , Dominique Tournier , Christophe Raynaud , Mihai Lazar , Dominique Planson IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩ Article dans une revue hal-01864533v1
	Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes Besar Asllani , Jean Baptiste Fonder , Pascal Bevilacqua , Dominique Planson , Luong Viet Phung Materials Science Forum, 2018, 924, pp.593 - 596. ⟨10.4028/www.scientific.net/MSF.924.593⟩ Article dans une revue hal-01857352v1
	VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs Besar Asllani , Asad Fayyaz , Alberto Castellazzi , Hervé Morel , Dominique Planson Microelectronics Reliability, 2018, 88-90, pp.604 - 609. ⟨10.1016/j.microrel.2018.06.047⟩ Article dans une revue hal-01889461v1
	Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions Gabriel Ferro , Selsabil Sejil , Mihai Lazar , D. Carole , C. Brylinski physica status solidi (a), 2017, 214 (4), ⟨10.1002/pssa.201600454⟩ Article dans une revue hal-01615190v1
	OBIC Technique Applied to Wide Bandgap Semiconductors from 100 K up to 450 K Hassan Hamad , Dominique Planson , Christophe Raynaud , Pascal Bevilacqua Semiconductor Science and Technology, 2017, 32 (5), ⟨10.1088/1361-6641/aa641d/meta⟩ Article dans une revue hal-01865068v1
	Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation Junichi Hasegawa , Loris Pace , Luong Viet Phung , Mutsuko Hatano , Dominique Planson IEEE Transactions on Electron Devices, 2017, 64 (3), pp.1203-1208. ⟨10.1109/TED.2017.2657223⟩ Article dans une revue hal-01636430v1
	SiC integrated circuits for smart power converter J F Mogniotte , Mihai Lazar , Christophe Raynaud , Dominique Planson , B Allard Romanian Journal of Information Science and Technology, 2017, 20 (4), pp.385-399 Article dans une revue hal-04277111v1
	Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections Julien Pezard , Véronique Soulière , Mihai Lazar , Naoufel Haddour , François Buret Materials Science Forum, 2017, 897, pp.739 - 742. ⟨10.4028/www.scientific.net/MSF.897.739⟩ Article dans une revue hal-01644735v1
	Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p⁺⁺ Emitters Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski Materials Science Forum, 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩ Article dans une revue hal-01648360v1
	Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations Amira Souguir-Aouani , Nicolas Thierry-Jebali , Dominique Tournier , Arnaud Yvon , Emmanuel Collard Materials Science Forum, 2016, 858, pp.1190 - 1193. ⟨10.4028/www.scientific.net/MSF.858.1190⟩ Article dans une revue hal-01857348v1
	Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Bertrand Vergne Materials Science Forum, 2016, 858, pp.245 - 248. ⟨10.4028/www.scientific.net/MSF.858.245⟩ Article dans une revue hal-01388035v1
	Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud Materials Science Forum, 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩ Article dans une revue hal-01388027v1
	Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications Thi Thanh Huyen Nguyen , Mihai Lazar , Jean-Louis Augé , Hervé Morel , Luong Viet Phung Materials Science Forum, 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩ Article dans une revue hal-01391838v1
	A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud IEEE Transactions on Electron Devices, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩ Article dans une revue hal-01387992v1
	Optimization of VLS Growth Process for 4H-SiC P/N Junctions Selsabil Sejil , Mihai Lazar , Frédéric Cayrel , Davy Carole , Christian Brylinski Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩ Article dans une revue hal-01388031v1
	Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode Pierre Brosselard , Florian Chevalier , Benjamin Proux , Nicolas Thierry-Jebali , Pascal Bevilacqua Materials Science Forum, 2015, 806, pp.117-120. ⟨10.4028/www.scientific.net/MSF.806.117⟩ Article dans une revue hal-02133670v1
	The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing Mihai Lazar , Farah Laariedh , Pierre Cremillieu , Dominique Planson , Jean-Louis Leclercq Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.256 - 259. ⟨10.1016/j.nimb.2015.07.033⟩ Article dans une revue hal-01391844v1
	P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices Mihai Lazar , Selsabil Sejil , L. Lalouat , Christophe Raynaud , D. Carole Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342 Article dans une revue hal-01626119v1
	A Study on the Chemistry of Epitaxial Ti₃SiC₂ Formation on 4H-SiC Using Al-Ti Annealing Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Berangère Toury Materials Science Forum, 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩ Article dans une revue hal-01391858v1
	4H-SiC VJFETs with Self-Aligned Contacts Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantin Vamvoukakis Materials Science Forum, 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩ Article dans une revue hal-01391852v1
	Original Field Plate to Decrease the Maximum Electric Field Peak for High-Voltage Diamond Schottky Diode Houssam Arbess , Karine Isoird , Saleem Hamady , Moustafa Zerarka , Dominique Planson IEEE Transactions on Electron Devices, 2015, 62 (9), pp. 2945-2951. ⟨10.1109/TED.2015.2456073⟩ Article dans une revue hal-01218835v1
	Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature Thibaut Chailloux , Cyril Calvez , Dominique Tournier , Dominique Planson Materials Science Forum, 2015, 821-823, pp.814-817. ⟨10.4028/www.scientific.net/MSF.821-823.814⟩ Article dans une revue hal-02116809v1
	Short-Circuit Capability Exploration of Silicon Carbide Devices Maxime Berthou , Dominique Planson , Dominique Tournier Materials Science Forum, 2015, 821-823, pp.810-813. ⟨10.4028/www.scientific.net/MSF.821-823.810⟩ Article dans une revue hal-02133674v1
	VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩ Article dans une revue hal-01387983v1
	High termination efficiency using polyimide trench for high voltage diamond Schottky diode Houssam Arbess , Karine Isoird , Moustafa Zerarka , Henri Schneider , Marie-Laure Locatelli Diamond and Related Materials, 2015, 58, pp.149-154. ⟨10.1016/j.diamond.2015.07.006⟩ Article dans une revue hal-01218796v1
	Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing Tony Abi-Tannous , Maher Soueidan , G. Ferro , Mihai Lazar , B. Toury Applied Surface Science, 2015, 347, pp.186 - 192. ⟨10.1016/j.apsusc.2015.04.077⟩ Article dans une revue hal-01391845v1
	2D Electric field imagery in 4H-SiC power diodes using OBIC technique Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier European Physical Journal: Applied Physics, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩ Article dans une revue hal-01387989v1
	Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Dominique Planson Materials Science Forum, 2015, 821-823, pp.223 - 228. ⟨10.4028/www.scientific.net/MSF.821-823.223⟩ Article dans une revue hal-01387987v1
	SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices Thibaut Chailloux , Cyril Calvez , Nicolas Thierry Thierry-Jebali , Dominique Planson , Dominique Tournier Materials Science Forum, 2014, 778-780, pp.1122 - 1125. ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩ Article dans une revue hal-01628242v1
	Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts Nicolas Thierry-Jebali , Mihai Lazar , A. Vo-Ha , D. Carole , V. Soulière Materials Science Forum, 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩ Article dans une revue hal-01987147v1
	Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Dominique Tournier , Bertrand Vergne Applied Physics Letters, 2014, 104 (8), ⟨10.1063/1.4866581⟩ Article dans une revue hal-01387924v1
	Die attach using silver sintering. Practical implementation and analysis Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi European Journal of Electrical Engineering, 2013, 16 (3-4), pp.293-305. ⟨10.3166/ejee.16.293-305⟩ Article dans une revue hal-00874465v1
	Pulse Current Characterization of SiC GTO Thyristors with Etched JTE Sigo Scharnholz , Ralf Hassdorf , Gontran Pâques , Bertrand Vergne , Dominique Planson Materials Science Forum, 2013, 740-742, pp.986 - 989. ⟨10.4028/www.scientific.net/MSF.740-742.986⟩ Article dans une revue hal-01627784v1
	Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport A. Vo-Ha , D. Carole , Mihai Lazar , Dominique Tournier , F. Cauwet Thin Solid Films, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩ Article dans une revue hal-01627830v1
	Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET Florian Chevalier , Pierre Brosselard , Dominique Tournier , G. Grosset , L. Dupuy Materials Science Forum, 2013, 740-742, pp.938-941. ⟨10.4028/www.scientific.net/MSF.740-742.938⟩ Article dans une revue hal-00803057v1
	Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport N. Thierry-Jebali , A. Vo-Ha , D. Carole , Mihai Lazar , Gabriel Ferro Applied Physics Letters, 2013, 102 (21), ⟨10.1063/1.4809570⟩ Article dans une revue hal-01627796v1
	3D TCAD Simulations for More Efficient SiC Power Devices Design Luong Viet Phung , Dominique Planson , Pierre Brosselard , Dominique Tournier , C. Brylinski ECS Transactions, 2013, 58 (4), pp.331 - 339. ⟨10.1149/05804.0331ecst⟩ Article dans une revue hal-01636483v1
	Towards Very High Voltage SiC Power Devices Dominique Planson , Pierre Brosselard , Dominique Tournier , Luong Viet Phung , Christian Brykinski ECS Transactions, 2013, 50 (3), pp.425-436. ⟨10.1149/05003.0425ecst⟩ Article dans une revue hal-04240149v1
	Electrical Characterization of PiN Diodes with p⁺ Layer Selectively Grown by VLS Transport Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo Ha , Davy Carole , Véronique Soulière Materials Science Forum, 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩ Article dans une revue hal-01627792v1
	p-Doped SiC Growth on Diamond Substrate by VLS Transport Arthur Vo Ha , Davy Carole , Mihai Lazar , Dominique Tournier , François Cauwet Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩ Article dans une revue hal-01627777v1
	Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes Duy Minh Nguyen , Runhua Huang , Luong Viet Phung , Dominique Planson , Maxime Berthou Materials Science Forum, 2013, 740-742, pp.609 - 612. ⟨10.4028/www.scientific.net/MSF.740-742.609⟩ Article dans une revue hal-01627801v1
	Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry-Jebali Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩ Article dans une revue hal-00803058v1
	Parallel and serial association of SiC light triggered thyristors Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson Materials Science Forum, 2012, 711, pp.129-133. ⟨10.4028/www.scientific.net/MSF.711.129⟩ Article dans une revue hal-00661512v1
	Comparison of SiC Thyristors with Differently Etched JTEs Gontran Pâques , Sigo Scharnholz , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker Materials Science Forum, 2012, 717-720, pp.1167 - 1170. ⟨10.4028/www.scientific.net/MSF.717-720.1167⟩ Article dans une revue hal-01627763v1
	Pulse Characterization of Optically Triggered SiC Thyristors Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson Materials Science Forum, 2012, 717-720, pp.1179-1182. ⟨10.4028/www.scientific.net/MSF.717-720.1179⟩ Article dans une revue hal-02166420v1
	OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz Materials Science Forum, 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩ Article dans une revue hal-00803059v1
	4H-SiC P⁺N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine Materials Science Forum, 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩ Article dans une revue hal-02275699v1
	SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements Mihai Lazar , François Jomard , Duy Minh M Nguyen , Christophe Raynaud , Gontran Pâques Materials Science Forum, 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩ Article dans une revue hal-02166414v1
	4H-silicon carbide thin junction based ultraviolet photodetectors Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Vincent Le Borgne Thin Solid Films, 2012, in press. ⟨10.1016/j.tsf.2011.12.079⟩ Article dans une revue hal-00747356v1
	Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE Nicolas Dheilly , Dominique Planson , Gontran Pâques , Sigo Scharnholz Solid-State Electronics, 2012, 73, pp.32-36. ⟨10.1016/j.sse.2012.02.007⟩ Article dans une revue hal-00747348v1
	Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC Farah Laariedh , Mihai Lazar , Pierre Cremillieu , Jean -Louis Leclercq , Dominique Planson Materials Science Forum, 2012, 711, pp.169-173. ⟨10.4028/www.scientific.net/MSF.711.169⟩ Article dans une revue hal-04050541v1
	600 V PiN diodes fabricated using on-axis 4H silicon carbide Gabriel Civrac , Farah Laariedh , Nicolas Thierry-Jebali , Mihai Lazar , Dominique Planson Materials Science Forum, 2012 Article dans une revue hal-02126341v1
	Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Olivier Palais Materials Science Forum, 2012, 711, pp.114-117. ⟨10.4028/www.scientific.net/MSF.711.114⟩ Article dans une revue hal-04050522v1
	Pressureless Silver Sintering Die-Attach for SiC Power Devices Stanislas Hascoët , Cyril Buttay , Dominique Planson , Rodica Chiriac , Amandine Masson Materials Science Forum, 2012, 740 - 742, pp.851-854. ⟨10.4028/www.scientific.net/MSF.740-742.851⟩ Article dans une revue hal-00799893v1
	Graded Etched Junction Termination for SiC Thyristors Gontran Pâques , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker , Sigo Scharnholz Materials Science Forum, 2011, 679-680, pp.457-460. ⟨10.4028/www.scientific.net/MSF.679-680.457⟩ Article dans une revue hal-00661479v1
	Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩ Article dans une revue hal-00799902v1
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	Diode Schottky sur diamant CVD. Simulation, réalisation technologique et étude de protection périphérique Sojan Koné , Hui Ding , Fabien Thion , Henri Schneider , Karine Isoird European Journal of Electrical Engineering, 2011, 14 (5), pp.553 - 567. ⟨10.3166/ejee.14.553-567⟩ Article dans une revue hal-01627761v1
	Optical triggering of SiC thyristors using UV LEDs Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Pascal Bevilacqua , Christophe Raynaud Electronics Letters, 2011, 47 (7), pp.459 - 460. ⟨10.1049/el.2010.7041⟩ Article dans une revue hal-00661435v1
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	Characterization and VHDL-AMS modeling of SiC-JFET transistor Rami Mousa , Dominique Planson , Hervé Morel European Journal of Electrical Engineering, 2011, 14 (1), pp.7-27. ⟨10.3166/EJEE.14.7-27⟩ Article dans une revue hal-00747438v1
	Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices Christophe Raynaud , Dominique Tournier , Hervé Morel , Dominique Planson Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩ Article dans une revue hal-02186368v1
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	Extreme dielectric strength in boron doped homoepitaxial diamond Pierre-Nicolas Volpe , Pierre Muret , Julien Pernot , Franck Omnès , Tokuyuki Teraji Applied Physics Letters, 2010, 97 (22), pp.223501. ⟨10.1063/1.3520140⟩ Article dans une revue hal-00734714v1
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	Process Optimization for High Temperature SiC Lateral Devices Maher Soueidan , Mihai Lazar , Duy Minh Nguyen , Dominique Tournier , Christophe Raynaud Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.585-588. ⟨10.4028/www.scientific.net/MSF.615-617.585⟩ Article dans une revue hal-04368215v1
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	Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT) Pierre Lefranc , Dominique Planson , Hervé Morel , Dominique Bergogne Solid-State Electronics, 2009, 53 (9), pp.944-954. ⟨10.1016/j.sse.2009.06.009⟩ Article dans une revue hal-00476201v1
	Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diode Heu Vang , Sigo Scharnholz , Christophe Raynaud , Mihai Lazar , Gontran Pâques Materials Science Forum, 2008, MATERIALS SCIENCE FORUM, 600-603, pp.1011-1014. ⟨10.4028/www.scientific.net/MSF.600-603.1011⟩ Article dans une revue hal-04368150v1
	Comparison of Electrical Properties of Ohmic Contact Realized on p-type 4H-SiC Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Heu Vang , Dominique Planson Materials Science Forum, 2008, Materials Science Forum, 600-603, pp.639-642. ⟨10.4028/www.scientific.net/MSF.600-603.639⟩ Article dans une revue hal-00391560v1
	Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne Materials Science Forum, 2008, Materials Science Forum, Volumes 600-603, pp.1031-1034. ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩ Article dans une revue hal-04452237v1
	Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC Erwan Oliviero , Mihai Lazar , Heu Vang , Christiane Dubois , Pierre Cremillieu Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.611-614. ⟨10.4028/www.scientific.net/MSF.556-557.611⟩ Article dans une revue hal-04369331v1
	OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes Christophe Raynaud , Daniel Loup , Phillippe Godignon , Raul Perez Rodriguez , Dominique Tournier Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.1007-1010. ⟨10.4028/www.scientific.net/MSF.556-557.1007⟩ Article dans une revue hal-04369314v1
	1.2 kV pin diodes with SiCrystal epiwafer Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremillieu Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.901-904. ⟨10.4028/www.scientific.net/MSF.556-557.901⟩ Article dans une revue hal-04369138v1
	Current sensing for SiC Power Devices D. Tournier , Miquel Vellvehi , Philippe Godignon , Josep Montserrat , Dominique Planson Materials Science Forum, 2006, MATERIALS SCIENCE FORUM, 527-529, pp.1215-1218. ⟨10.4028/www.scientific.net/MSF.527-529.1215⟩ Article dans une revue hal-04369348v1
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	Deep SiC etching with RIE Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu Superlattices and Microstructures, 2006, 40 (4-6), pp.388-392. ⟨10.1016/j.spmi.2006.06.015⟩ Article dans une revue hal-00179458v1
	Ni-Al ohmic contact to p-type 4H-SiC Heu Vang , Mihai Lazar , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu Superlattices and Microstructures, 2006, 40 (4-6), pp.626-631 Article dans une revue hal-00141426v1
	P-type SiC layers formed by VLS induced selective epitaxial growth Mihai Lazar , Christophe Jacquier , Christiane Dubois , Christophe Raynaud , Gabriel Ferro Materials Science Forum, 2005, 483-485, pp.633-636. ⟨10.4028/www.scientific.net/MSF.483-485.633⟩ Article dans une revue hal-04362494v1
	A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery Pierre Brosselard , Thierry Bouchet , Dominique Planson , Sigo Scharnholz , Gontran Pâques Materials Science Forum, 2005, 483-485, pp.1005-1008. ⟨10.4028/www.scientific.net/MSF.483-485.1005⟩ Article dans une revue hal-04345858v1
	Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement Bruno Allard , Gérard Coquery , Laurent Dupont , Zoubir Khatir , Mihai Lazar Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩ Article dans une revue hal-01702019v1
	The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study Mihai Lazar , G.C. Cardinali , Christophe Raynaud , Antonella Poggi , Dominique Planson Materials Science Forum, 2004, 457-460, pp.1025-1028. ⟨10.4028/www.scientific.net/MSF.457-460.1025⟩ Article dans une revue hal-04345830v1
	Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination Gheorghe Brezeanu , Phillippe Godignon , E. Dimitrova , Christophe Raynaud , Dominique Planson Materials Science Forum, 2004, 457-460, pp.1495-1498. ⟨10.4028/www.scientific.net/MSF.457-460.1495⟩ Article dans une revue hal-04093364v1
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	SiC Power Devices on QUASIC and SiCOI Smart-Cut^® Substrates: First Demonstrations Fabrice Letertre , N. Daval , Francois Templier , Edwige Bano , Dominique Planson Materials Science Forum, 2003, 433-436, pp.813-818. ⟨10.4028/www.scientific.net/MSF.433-436.813⟩ Article dans une revue hal-04091219v1
	Optimal layout for 6H-SiC VJFET controlled current limiting device Dominique Tournier , Xavier Jordà , Philippe Godignon , Dominique Planson , Jean-Pierre Chante Diamond and Related Materials, 2003, 12 (3-7), pp.1220-1223 Article dans une revue hal-00140113v1
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	Characterization of a 4H-SiC High Power Density Controlled Current Limiter Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud Materials Science Forum, 2003, 433-436, pp.871-874. ⟨10.4028/www.scientific.net/MSF.433-436.871⟩ Article dans une revue hal-02458100v1
	A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects Mihai Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird Materials Science Forum, 2002, 389-393, pp.827-830. ⟨10.4028/www.scientific.net/MSF.389-393.827⟩ Article dans une revue hal-02151714v1
	Realization of a High-Current and Low R_ON 600V Current-Limiting Device F. Nallet , Phillippe Godignon , Dominique Planson , Christophe Raynaud , Jean-Pierre P Chante Materials Science Forum, 2002, 389-393, pp.1247-1250. ⟨10.4028/www.scientific.net/MSF.389-393.1247⟩ Article dans une revue hal-02151717v1
	Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante Materials Science Forum, 2002, 389-393, pp.1243-1246. ⟨10.4028/www.scientific.net/MSF.389-393.1243⟩ Article dans une revue hal-02151713v1
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	Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante Materials Science Forum, 2002, 389-393, pp.1403-1406. ⟨10.4028/www.scientific.net/MSF.389-393.1403⟩ Article dans une revue hal-02151712v1
	Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments Laurent Ottaviani , Mihai Lazar , Marie-Laure Locatelli , Dominique Planson , Jean-Pierre Chante Materials Science and Engineering: B, 2002, 90 (3), pp.301-308. ⟨10.1016/S0921-5107(02)00002-8⟩ Article dans une revue hal-00140116v1
	Experimental characterization of a 4H-SiC high voltage current limiting device F. Nallet , Dominique Planson , Philippe Godignon , Marie-Laure Locatelli , Mihai Lazar Applied Surface Science, 2001, 184 (1-4), pp.404-407 Article dans une revue hal-00140117v1
	Study of 6H-SiC high voltage bipolar diodes under reverse biases Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud Applied Surface Science, 2001, 184 (1-4), pp.477-482. ⟨10.1016/S0169-4332(01)00537-2⟩ Article dans une revue hal-00140118v1
	High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson Materials Science Forum, 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩ Article dans une revue hal-02151710v1
	Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy N. S. Savkina , A. A. Lebedev , D. V. Davydov , A. M. Strel'Chuk , A. S. Tregubova Materials Science and Engineering: B, 2000, 77 (1), pp.50-54 Article dans une revue hal-00140585v1
	Improved Annealing Process for 6H-SiC p⁺-n Junction Creation by Al Implantation Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Bruno Canut Materials Science Forum, 2000, 338-342, pp.921-924. ⟨10.4028/www.scientific.net/MSF.338-342.921⟩ Article dans une revue hal-02275720v1
	Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation Karine Isoird , Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Christophe Raynaud Materials Science Forum, 2000, 338-342, pp.1363-1366. ⟨10.4028/www.scientific.net/MSF.338-342.1363⟩ Article dans une revue hal-02281030v1
	P-N Junction creation in 6H-SiC by aluminum implantation Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Karine Isoird , Jean-Pierre Chante Materials Science and Engineering: B, 1999, 61 (2), pp.424-428 Article dans une revue hal-00141527v1
	Aluminum multiple implantations in 6H–SiC at 300 K Laurent Ottaviani , Erwan Morvan , Marie-Laure Locatelli , Dominique Planson , Philippe Godignon Solid-State Electronics, 1999, 43 (12), pp.2215-2223. ⟨10.1016/S0038-1101(99)00199-9⟩ Article dans une revue hal-03727987v1
	Design of a 600 V silicon carbide vertical power MOSFET Dominique Planson , Marie-Laure Locatelli , F. Lanois , Jean-Pierre Chante Materials Science and Engineering: B, 1999, 61 (2), pp.497-501 Article dans une revue hal-00141536v1
	Electrical characterisation of MNOS devices on p-type 6H-SiC S. Berberich , Philippe Godignon , José del R. Millán , Dominique Planson , H. Hartnagel Diamond and Related Materials, 1999, 8 (2-5), pp.305-308 Article dans une revue hal-00141547v1
	Les composants de puissance : état de l'art, les évolutions Jean-Pierre Chante , Bruno Allard , Dominique Bergogne , Francis Calmon , René Elhinger Revue Internationale de Génie Electrique, RIGE, 1998 Article dans une revue hal-02117240v1
	Post-Implantation Annealing of Aluminium in 6H-SiC Laurent Ottaviani , Dominique Planson , Marie-Laure Locatelli , Jean-Pierre Chante , B. Canut Materials Science Forum, 1998, 264-268, pp.709-712. ⟨10.4028/www.scientific.net/MSF.264-268.709⟩ Article dans une revue hal-02281029v1
	Metal-Nitride-Semiconductor Capacitors on 6H-SiC Stefan Berberich , Phillippe Godignon , José Millan , Dominique Planson , H.L. Hartnagel Materials Science Forum, 1998, 264-268, pp.881-884. ⟨10.4028/www.scientific.net/MSF.264-268.881⟩ Article dans une revue hal-03728071v1
	Periphery protection for silicon carbide devices: State of the art and simulation Dominique Planson , Marie-Laure Locatelli , S. Ortolland , Jean-Pierre Chante , H. Mitlehner Materials Science and Engineering: B, 1997, 46 (1-3), pp.210-217 Article dans une revue hal-00141603v1
	Damage annealing and dopant activation in Al ion implanted alpha-SiC B. Canut , S. Ramos , J. Roger , Jean-Pierre Chante , Marie-Laure Locatelli Materials Science and Engineering: B, 1997, 46 (1-3), pp.267-270. ⟨10.1016/S0921-5107(96)01986-1⟩ Article dans une revue hal-00141605v1
	Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures A. A. Lebedev , S. Ortolland , Christophe Raynaud , Marie-Laure Locatelli , Dominique Planson Semiconductors, 1997, 31 (7), pp.735-737 Article dans une revue hal-00141601v1
	The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC A A Lebedev , A M Strel'Chuk , S. Ortolland , C Raynaud , Marie-Laure Locatelli Institute of Physics Conference Series, 1996 Article dans une revue hal-02423361v1
	Angle etch control for silicon carbide power devices F. Lanois , P. Lassagne , Dominique Planson , Marie-Laure Locatelli Applied Physics Letters, 1996, 69 (2), pp.236-238 Article dans une revue hal-00141623v1

	Micro-Raman characterization of vertical GaN Schottky and PN diodes Camille Sonneville , Vishwajeet Maurya , Maroun Dagher , Adam Mohamed Kaywah , Eric Frayssinet 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), May 2023, Palerme, Italy Communication dans un congrès hal-04170420v1
	Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V Adrien Lambert , Hervé Morel , D. Tournier , Dominique Planson , Luong Viêt Phung 5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France Communication dans un congrès hal-04150168v1
	Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau 20th International Conference on Silicon Carbide and Related Materials (ICSCRM) - ICSCRM 2023, Naples University - Federico II, Sep 2023, Sorrento, Italy Communication dans un congrès hal-04221605v1
	Caractérisation dynamique de thyristors SiC avec gâchette amplificatrice Sigo Scharnholz , Kamil Kotra , Ralf Hassdorf , Luong Viêt Phung , Dominique Planson 5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France Communication dans un congrès hal-04401362v1
	Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viet Phung , M. Lazar 25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩ Communication dans un congrès hal-04203163v1
	Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration Ralph Makhoul , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau , Mihai Lazar IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩ Communication dans un congrès hal-04147862v1
	Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville , Pierre Brosselard ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy Communication dans un congrès hal-04218429v1
	Application of the Double Source Switching Test to GaN HEMTs Tamiris Grossl Bade , Maroun Alam , Hervé Morel , Dominique Planson 25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark Communication dans un congrès hal-04225311v1
	Impact of Wide Band-Gap Semiconductors on the Design in Power Electronics Hervé Morel , Maroun Alam , Pascal Bevilacqua , D. Tournier , Dominique Planson Symposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France Communication dans un congrès hal-04224402v1
	Vertical pin diodes on large freestanding (100) diamond film M.A. Pinault-Thaury , Mohamed Bouras , Rémi Gillet , Ingrid Stenger , François Jomard 2023 EUROPEAN MATERIALS RESEARCH SOCIETY Spring Meeting, EUROPEAN MATERIALS RESEARCH SOCIETY, May 2023, Strasbourg, France Communication dans un congrès hal-04219862v1
	Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Pierre Brosselard , Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy Communication dans un congrès hal-04222211v1
	First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , Régis Meuret 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France Communication dans un congrès hal-04240602v1
	Emerging trends in OBIC characterization technique for Wide Bandgap semiconductor devices Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Dominique Tournier International Semiconductor Conference (CAS-2023), IMT Bucharest, Oct 2023, Sinaia, Romania. pp.3-10, ⟨10.1109/CAS59036.2023.10303647⟩ Communication dans un congrès hal-04238355v1
	Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses Maroun Alam , Hervé Morel , Luong Viêt Phung , Dominique Planson , A. Yvon 2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198, ⟨10.1109/CAS56377.2022.9934143⟩ Communication dans un congrès hal-03887865v1
	Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung 2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩ Communication dans un congrès hal-03856578v1
	Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Stéphane Becu , Matthew Charles SSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan Communication dans un congrès cea-03875079v1
	Electrical behavior of vertical Schottky diodes on GaN homoepitaxy M Dagher , Camille Sonneville , Georges Bremond , Dominique Planson , Yvon Cordier IWN 2022 - International Workshop on Nitride Semiconductors, Oct 2022, Berlin, Germany Communication dans un congrès hal-03854620v1
	Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices Zahraa Zaidan , Nedal Al Taradeh , Christophe Rodriguez , Abdelatif Jaouad , Ali Soltani Conférence Euro-méditerranéenne Organisé par Matériaux, Composants et Systèmes (EMCMDS), Nov 2022, Fez, Morocco Communication dans un congrès hal-04303675v1
	Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices Zahraa Zaidan , Nedal Al Taradeh , Christophe Rodriguez , Abdelatif Jaouad , Ali Soltani Conférence Euro-méditerranéenne Matériaux, Composants et Systèmes EMCM-DS, Oct 2022, Fes, Morocco Communication dans un congrès hal-03946187v1
	Caractérisation par spectroscopie micro-Raman de diodes GaN Schottky Camille Sonneville , Atse Julien Eric N’dohi , S Saidi , T H Ngo , P. de Mierry Conférence Internationale Matériaux, Oct 2022, Lille, France Communication dans un congrès hal-03844887v1
	Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes P Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Herve Morel , Dominique Planson International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India Communication dans un congrès hal-03990840v1
	Design of a test package for high voltage SiC diodes Arthur Boutry , Bruno Lefebvre , Cyril Buttay , Eric Vagnon , Dominique Planson Proceedings of the International Workshop on Integrated Power Packaging (IWIPP 2022), Aug 2022, Grenoble, France. ⟨10.1109/IWIPP50752.2022.9894223⟩ Communication dans un congrès hal-03772006v1
	Trapping effects in High-Power 4H-Silicon Carbide (4H-SiC) Bipolar PiN Rectifiers P Vigneshwara Raja , Besar Asllani , Christophe Raynaud , Hervé Morel , Luong Viet Phung 6th IEEE International Conference on Emerging Electronics (ICEE 2022), IEEE, Dec 2022, Bangalore, India Communication dans un congrès hal-04011039v1
	Dynamic characterization of SiC thyristors with amplifying gate design K Kotra , S Scharnholz , R Hassdorf , L V Phung , Dominique Planson E-MRS 2022 Fall Meeting, Sep 2022, Varsovie, Poland Communication dans un congrès hal-04011099v1
	Multiphysics Characterizations of Vertical GaN Schottky Diodes Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry 2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩ Communication dans un congrès hal-03844585v1
	Investigation of SiC thyristors with varying amplifying gate design S Scharnholz , R Hassdorf , D Bauersfeld , B Vergne , Luong Viêt Phung European Conference on Silicon Carbide and Related Materials (ECSCRM2020) 2021, Oct 2021, Tours, France Communication dans un congrès hal-03410752v1
	Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysis Alina Muravitskaya , Anna Rumyantseva , Atse Julien Eric N’dohi , Camille Sonneville , Dominique Planson ECSCRM2020-2021, Oct 2021, Tours, France Communication dans un congrès hal-03410757v1
	Conception de diodes TMBS haute tension (6kV) en diamant Ralph Makhoul , Karine Isoird , Luong Viet Phung , Dominique Planson SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France Communication dans un congrès hal-03355128v1
	MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODES Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry POWER 2021 (IMAPS), Nov 2021, Tours, France Communication dans un congrès hal-03676940v1
	4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method Dominique Planson , C Sonneville , Pascal Bevilacqua , L V Phung , B Asllani ECSCRM 2020-2021, Oct 2021, Tours, France Communication dans un congrès hal-03410274v1
	High voltage (6kV) diamond TMBS diode design Ralph Makhoul , Karine Isoird , Luong Viet Phung , Dominique Planson 31st International Conference On Diamond and Carbon Materials, Sep 2021, Palma, Mallorca, Spain Communication dans un congrès hal-03715580v1
	Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications Joao Oliveira , Ali Alhoussen , Florent Loiselay , Hervé Morel , Dominique Planson EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570434⟩ Communication dans un congrès hal-03260519v1
	Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications Atse Julien Eric N’dohi , Camille Sonneville , Thi Huong Ngo , P. de Mierry , Éric Frayssinet EXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom Communication dans un congrès hal-03676503v1
	Edge terminations for 4H-SiC power devices: a critical issue P Godignon , J Montserrat , J Rebollo , Dominique Planson ECSCRM 2020-2021, Oct 2021, Tours, France Communication dans un congrès hal-03418183v1
	Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs Joao Oliveira , Florent Loiselay , Hervé Morel , Dominique Planson EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩ Communication dans un congrès hal-02945913v1
	Analysis of Parasitic Elements in Power Modules Based on GaN Components Joao Oliveira , Hervé Morel , Dominique Planson , Florent Loiselay PCIM Europe 2020, Jul 2020, Nuremberg, Germany Communication dans un congrès hal-02945892v1
	Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor Besar Asllani , Hervé Morel , Pascal Bevilacqua , Dominique Planson EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩ Communication dans un congrès hal-02945919v1
	Static characteristics of 5 kV SiC BJTs and Darlington’s Besar Asllani , Dominique Planson , Hervé Morel , T Lagier International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan Communication dans un congrès hal-02428513v1
	Effects of the laser beam size on the Optical Beam Induced Current (OBIC) for the study of Wide Band Gap (WBG) Semi-Conductor Devices Camille Sonneville , Dominique Planson , Luong Viêt Phung , Besar Asllani , Pascal Bevilacqua Workshop on Compound Semiconductor Devices and Integrated Circuits 2019 (WOCSDICE 2019), Jun 2019, Cabourg, France Communication dans un congrès hal-02164000v1
	V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate Besar Asllani , Alberto Castellazzi , Oriol Aviño Salvado , Asad Fayyaz , Hervé Morel IRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩ Communication dans un congrès hal-02099781v1
	Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC) Camille Sonneville , Dominique Planson , Luong Viêt Phung , Pascal Bevilacqua , Besar Asllani International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan. pp.Mo-P-23 Communication dans un congrès hal-02428502v1
	High-Voltage SiC-JFET Fabrication and Full Characterization Besar Asllani , Pascal Bevilacqua , A. Zaoui , G Grosset , Dominique Planson ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5 Communication dans un congrès hal-02428523v1
	SiC lateral Schottky diode technology for integrated smart power converter Jean-François Mogniotte , Christophe Raynaud , Mihai Lazar , Bruno Allard , Dominique Planson 2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩ Communication dans un congrès hal-01864545v1
	Towards SiC thyristors with amplifying gate design Ralf Hassdorf , Sigo Scharnholz , Dirk Bauersfeld , Bertrand Vergne , Luong Viêt Phung Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France Communication dans un congrès hal-02983373v1
	Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode Teng Zhang , Christophe Raynaud , Dominique Planson ECSCRM'18, Sep 2018, Birmingham, United Kingdom Communication dans un congrès hal-02004837v1
	Subthreshold Drain current hysteresis of planar SiC MOSFETs Besar Asllani , A Castellazzi , Dominique Planson , Hervé Morel ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04 Communication dans un congrès hal-02428531v1
	Experimental and simulation results of OBIC Technique Applied to Wide Bandgap Semiconductors Dominique Planson , Luong-Viet Phung , Besar Asllani , Pascal Bevilacqua , Hassan Hamad e-MRS Fall Meeting, Sep 2018, Varsovie, Poland Communication dans un congrès hal-02116919v1
	Conception and high temperature characterization of 10 kV 50 A 4H-SiC PiN diodes B Choucoutou , Besar Asllani , L V Phung , J B Fonder , Dominnique Tournier European Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom Communication dans un congrès hal-02004841v1
	Mesure et analyse de la hauteur de barrière des contacts Schottky Mo sur SiC-4H Teng Zhang , Christophe Raynaud , Dominique Planson Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France Communication dans un congrès hal-02983328v1
	Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes Besar Asllani , Dominique Planson , Pascal Bevilacqua , J B Fonder , B Choucoutou ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2 Communication dans un congrès hal-01985994v1
	SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation Besar Asllani , Hervé Morel , Dominique Planson , Asad Fayyaz , Alberto Castellazzi ESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩ Communication dans un congrès hal-01984359v1
	Technology Route towards SiC Thyristor Devices with Amplifying Gate Design S Scharnholz , R Hassdorf , D Bauersfeld , B Vergne , L V Phung Compound Semiconductor Week 2017, May 2017, Berlin, Germany Communication dans un congrès hal-03103484v1
	Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodes Besar Asllani , J B Fonder , Pascal Bevilacqua , Dominique Planson , L. Phung International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington DC, United States Communication dans un congrès hal-02132576v1
	Emergence of SiC Thyristors Featuring Amplifying Gate Design Ralf Hassdorf , Sigo Scharnholz , Dirk Bauersfeld , Bertrand Vergne , Luong Viêt Phung International Conference on Silicon Carbide and Related Materials, Sep 2017, Washington DC, United States Communication dans un congrès hal-02004843v1
	Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode Dominique Planson , Besar Asllani , Hassan Hamad , Marie-Laure Locatelli , Lumei Wei International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4 Communication dans un congrès hal-02138767v1
	Simulation-based Study on the Optical Beam Intensity Dependence of the Optically Triggered 4H-SiC Thyristors Turn-on Operation Junichi Hasegawa , Loris Pace , Luong Viêt Phung , Mutsuko Hatano , Dominique Planson International Conference on Solid State Devices and Materials 2016, Sep 2016, Tsukuba International Congress Center Tsukuba, Japan. ⟨10.7567/SSDM.2016.PS-14-17L⟩ Communication dans un congrès hal-04088082v1
	OBIC Technique Applied to Wide Bandgap Semiconductors Dominique Planson , Hassan Hamad 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC ‐ Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2016, Aveiro, Portugal Communication dans un congrès hal-01388036v1
	Étude en simulation et conception d'un transistor bipolaire (BJT) 10 kV en 4H-SiC Beverley Choucoutou , Luong Viet Phung , Pierre Brosselard , Michel Mermet-Guyennet , Dominique Planson Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France Communication dans un congrès hal-01361668v1
	Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski ECSCRM'16, Sep 2016, Halkidiki, Greece Communication dans un congrès hal-02138729v1
	Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections Julien Pezard , V. Souliere , Mihai Lazar , Naoufel Haddour , François Buret ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52 Communication dans un congrès hal-02138738v1
	Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions Selsabil Sejil , Mihai Lazar , Davy Carole , Christian Brylinski , Dominique Planson Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States Communication dans un congrès hal-02428659v1
	Determination of 4H-SiC ionization rates using OBIC based on two-photon absorption Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , S Sharnholz , Bertrand Vergne International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02138523v1
	Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices Mihai Lazar , Davy Carole , Christophe Raynaud , Gabriel Ferro , Selsabil Sejil CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩ Communication dans un congrès hal-01388019v1
	Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase Tony Abi-Tannous , Maher Soueidan , G. Ferro , Mihai Lazar , Christophe Raynaud ICSCRM, Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02138520v1
	Study and optimization of a 600V Pseudo-vertical GaN-on-silicon rectifier by finite elements simulation A Souguir-Aouani , N. Thierry-Jebali , Dominique Tournier , A Yvon , E Collard ICSCRM 2015, Oct 2015, Giardini Naxos, Italy. pp.Mo-P-44 Communication dans un congrès hal-02138522v1
	Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductors Bertrand Vergne , Sigo Scharnholz , Dominique Planson , Dominique Tournier , Pierre Brosselard International Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic Communication dans un congrès hal-02428642v1
	Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Dominique Planson CAS, Oct 2015, Sinaia, Romania. ⟨10.1109/SMICND.2015.7355226⟩ Communication dans un congrès hal-01388024v1
	Vertical termination filled with adequate dielectric for SiC devices in HVDC applications T. Nguyen-Bui , Mihai Lazar , Jean-Louis Augé , Hervé Morel , L. Phung International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02138529v1
	4H-SiC VJFETs with Self-Aligned Contacts Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantinos Vamvoukakis ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75 Communication dans un congrès hal-02133681v1
	4H-SiC P-N junctions realized by VLS for JFET lateral structures Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61 Communication dans un congrès hal-02133686v1
	Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAX Tony Abi Tannous , Maher Soueidan , Gabriel Ferro , Berangere Toury-Pierre , Mihai Lazar Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065327v1
	Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes Hassan Hamad , Pascal Bevilacqua , Christophe Raynaud , Dominique Planson 2014 IEEE PRIME, Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872761⟩ Communication dans un congrès hal-01388043v1
	Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Dominique Planson ECSCRM'14, Sep 2014, Grenoble, France. pp.MO2-IP-08 Communication dans un congrès hal-02133683v1
	Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects Dominique Planson , Pierre Brosselard , Karine Isoird , Mihai Lazar , Luong Viêt Phung CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩ Communication dans un congrès hal-01388002v1
	Optimisation de la terminaison d'une diode Schottky diamant haute tension Houssam Arbess , Karine Isoird , Dominique Planson , Luong Viet Phung Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065274v1
	Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065307v1
	Conception de thyristors SiC permettant l'étude de l'amplification interne de l'allumage Sigo Scharnholz , Luong Viêt Phung , Dominique Tournier , Bertrand Vergne , Ralf Hassdorf Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065352v1
	On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealing Tony Abi Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Bérangère Toury ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63 Communication dans un congrès hal-02428741v1
	Characterization and comparison of 1.2 kV SiC power devices from cryogenic to high temperature Thibaut Chailloux , Cyril Calvez , Dominique Tournier , Dominique Planson ECSCRM'14, Sep 2014, Grenoble, France Communication dans un congrès hal-02132486v1
	Etude de différents transistors de puissance SiC 1.2kV des températures cryogéniques aux hautes températures Thibaut Chailloux , Cyril Calvez , Dominique Tournier , Dominique Planson Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065281v1
	Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique Marc Petit , Seddik Bacha , Xavier Guillaud , Hervé Morel , Dominique Planson 1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France Communication dans un congrès hal-01065154v1
	3D TCAD Simulations for More Efficient SiC Power Devices Design Luong Viêt Phung , Dominique Planson , Pierre Brosselard , Dominique Tournier , Christian Brylinski Electro Chemical Society 224th meeting, Oct 2013, San Francisco, United States. ⟨10.1149/05804.0331ecst⟩ Communication dans un congrès hal-04240572v1
	Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical Characteristics Thibault Chailloux , Cyril Calvez , Pascal Bevilacqua , Dominique Planson , Dominique Tournier HiTEN'13, Jul 2013, Oxford, United Kingdom Communication dans un congrès hal-03326669v1
	SiC power devices operation from cryogenic to high temperature: investigation of various 1.2kV SiC power devices T Chailloux , C Calvez , N Thierry-Jebaly , D. Tournier , Dominique Planson International Conference on Silicon Carbide and Related Materials (ICSCRM) 2013, Sep 2013, Miyazaki, Japan. pp.1122-1125, ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩ Communication dans un congrès hal-04169013v1
	Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transport N Thierry-Jebali , Mihai Lazar , A Vo-Ha , D Carole , V Soulière International Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan Communication dans un congrès hal-04011693v1
	High temperature, Smart Power Module for aircraft actuators Khalil El Falahi , Stanislas Hascoët , Cyril Buttay , Pascal Bevilacqua , Luong Viet Phung HiTEN'13, Jul 2013, Oxford, United Kingdom Communication dans un congrès hal-00874666v1
	Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diode Pierre Brosselard , F Chevalier , B Proux , N Thierry-Jebali , Pascal Bevilacqua International Silicon Carbide Hetero-Epitaxy HeteroSiC and Workshop on Advanced Semiconductor Materials and devices for Power Electronics WASMPE, Jun 2013, Nice, France Communication dans un congrès hal-04022951v1
	Edge termination design improvements for 10 kV 4H-SiC bipolar diodes D M Nguyen , R Huang , L V Phung , Maxime Berthou , P Godignon European Conference on Silicon Carbide and Related Materials 2012, Sep 2012, Saint-Pétersbourg, Russia Communication dans un congrès hal-03316271v1
	Design and characterization of a novel 3.3 kV 4H-SiC JFET Florian Chevalier , Pierre Brosselard , D. Tournier , Grégory Grosset , Lionel Dupuy Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p Communication dans un congrès hal-04048180v1
	Réalisation et caractérisation de diodes Schottky en diamant monocristallin protégées par plaque de champ sur Si3N4 Fabien Thion , Karine Isoird , Dominique Planson , Marie-Laure Locatelli , Henri Schneider 14ème EPF, Jul 2012, Bordeaux, France. 4 p Communication dans un congrès hal-01005917v1
	PASChAC, système automatisé de caractérisation de composants sur wafer Bertrand Vergne , Gontran Pâques , Claudia Maurer , Sigo Scharnholz , Pierre Brosselard Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France Communication dans un congrès hal-02282734v1
	Report de puce par frittage d'argent - mise en oeuvre et analyse Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi 14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61) Communication dans un congrès hal-00729156v1
	Using a two step plasma etching process for diamond power devices F. Thion , K. Isoird , Dominique Planson , Marie-Laure Locatelli , Henri Schneider International Conference on Diamond and Carbon Materials Granada, SPAIN, 2012, Granada, Spain Communication dans un congrès hal-03966086v1
	p-type SiC growth on diamond substrate by VLS Transport Arthur Vo-Ha , Davy Carole , Mihai Lazar , D. Tournier , François Cauwet ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p Communication dans un congrès hal-04423301v1
	Electrical characteristics (I-V) of field plate protected vertical diamond Schottky diodes F. Thion , K. Isoird , Dominique Planson , Marie-Laure Locatelli , Henri Schneider International Conference on Diamond and Carbon Materials Granada, SPAIN, 2012, Granada, Spain Communication dans un congrès hal-03966084v1
	Design of an integrated power converter in Wide Band Gap for harsh environments Jean-François Mogniotte , Dominique Tournier , Pascal Bevilacqua , Philippe Godignon , Dominique Planson Conference on Integrated Power Electronics systems, Mar 2012, Nuremberg, Germany Communication dans un congrès hal-02124203v1
	Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transport Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo-Ha , Davy Carole , Véronique Soulière Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p Communication dans un congrès hal-04366810v1
	Pressureless Silver Sintering Die-Attach for SiC Power Devices Stanislas Hascoët , Cyril Buttay , Dominique Planson , Rodica Chiriac , Amandine Masson CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p Communication dans un congrès hal-00759987v2
	Evaluation of silver-sintering die attach Wissam Sabbah , Raphaël Riva , Stanislas Hascoët , Cyril Buttay , Stephane Azzopardi 7th CIPS, Mar 2012, Nuremberg, Germany. pp.237-243 Communication dans un congrès hal-00707733v1
	Towards Very High Voltage SiC Power Devices Dominique Planson , Pierre Brosselard , Dominique Tournier , L V Phung , C. Brylinski PRiME 2012-ECS, Oct 2012, Honolulu-Hawaii, United States. ⟨10.1149/05003.0425ecst⟩ Communication dans un congrès hal-02116906v1
	Pulse Current Characterization of SiC GTO Thyristors with Etched JTE Sigo Scharnholz , Ralf Hassdorf , Gontran Pâques , Bertrand Vergne , Dominique Planson European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Sep 2012, Saint-Petersbourg, Russia. pp.986-989, ⟨10.4028/www.scientific.net/MSF.740-742.986⟩ Communication dans un congrès hal-04423357v1
	Thyristors GTO haute tension en carbure de silicium avec terminaison JTE gravée Sigo Scharnholz , Gontran Pâques , Bertrand Vergne , Claudia Maurer , Dominique Planson Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France Communication dans un congrès hal-04423483v1
	Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry Thierry-Jebali ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p Communication dans un congrès hal-04362529v1
	A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET F Chevalier , G Grosset , L Dupuy , Dominique Tournier , Dominique Planson HETECH, Nov 2012, Barcelone, France Communication dans un congrès hal-01113179v1
	600 V PiN diodes fabricated using on-axis 4H silicon carbide Gabriel Civrac , Farah Laariedh , Nicolas Thierry-Jebali , Mihai Lazar , Dominique Planson International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩ Communication dans un congrès hal-00747295v1
	Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics Laurent Ottaviani , Stéphane Biondo , Mihai Lazar , Wilfried Vervisch , Julian Duchaine WOCSDICE, May 2011, Catania, Italy. pp.181 Communication dans un congrès hal-00661522v1
	Perspectives on SiC and III-N Based Devices for Power Electronics Christian Brylinski , Dominique Planson 220th ECS Meeting, The Electrochemical Society, Oct 2011, Boston, United States. pp.139-152, ⟨10.1149/1.3631492⟩ Communication dans un congrès hal-02865456v1
	SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements Mihai Lazar , François Jomard , Duy Minh Nguyen , Christophe Raynaud , Gontran Pâques ICSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747300v1
	Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD Communication dans un congrès hal-00661500v1
	OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz CSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747298v1
	Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Olivier Palais HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩ Communication dans un congrès hal-00661511v1
	Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC Farah Laariedh , Mihai Lazar , Pierre Cremilleu , Jean-Louis Leclercq , Dominique Planson HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.169-173, ⟨10.4028/www.scientific.net/MSF.711.169⟩ Communication dans un congrès hal-00661507v1
	Pulse characterization of optically triggered SiC thyristors Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM'2011), Philipp Neudeck, Sep 2011, Cleveland, United States. pp.FR-1A-3 Communication dans un congrès hal-00747341v1
	Parallel and serial association of SiC light triggered thyristors Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson HeteroSiC & WASMPE 2011, Jun 2011, Tours, France Communication dans un congrès hal-00661520v1
	4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine CSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747301v1
	Simulation and design of junction termination structures for diamond Schottky diodes Fabien Thion , Karine Isoird , Dominique Planson , M-L Locatelli , H Ding European Conference on Diamond Diamond-like Materials Carbon Nanotubes and Nitrides (DIAMOND 2010), Sep 2010, Budapest, Hungary Communication dans un congrès hal-03656932v1
	Conception d'une protection périphérique originale pour composants bipolaires en carbure de silicium (SiC) Nicolas Dheilly , Dominique Planson , Gontran Pâques , Sigo Scharnholz 13ème EPF, Jun 2010, Saint-Nazaire, France Communication dans un congrès hal-00618709v1
	Chambre à Vide de Caractérisation Haute Tension de Composants Semiconducteurs Nus Bertrand Vergne , Gontran Pâques , Jens-Peter Konrath , Sigo Scharnholz , Nicolas Dheilly 13ème EPF, Jun 2010, Saint-Nazaire, France Communication dans un congrès hal-00618684v1
	Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State Mihai Lazar , Fabrice Enoch , Farah Laariedh , Dominique Planson , Pierre Brosselard CSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩ Communication dans un congrès hal-00661443v1
	Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height Gontran Pâques , Nicolas Dheilly , Dominique Planson , Sigo Scharnholz , Rik W. de Doncker European Conference on Silicon Carbide and Related Materials ECSCRM-2010, Aug 2010, Oslo (Norway), Norway Communication dans un congrès hal-04349694v1
	Protection périphérique pour composants de puissance en diamant Fabien Thion , Karine Isoird , Dominique Planson , Marie-Laure Locatelli 13ème EPF, Jun 2010, Saint-Nazaire, France. 4p Communication dans un congrès hal-00618708v1
	Optical triggering of 4H-SiC thyristors with a 365 nm UV LED Nicolas Dheilly , Gontran Pâques , Dominique Planson , P Bevilacqua , S Scharnholz European Conference on Silicon Carbide and Related Materials ECSCRM-2010, Aug 2010, Oslo (Norway), Norway. ⟨10.4028/www.scientific.net/MSF.679-680.690⟩ Communication dans un congrès hal-03990671v1
	Réalisation de Diodes SiC Simples pour l'Etude de Passivations Gontran Pâques , Sigo Scharnholz , Jens-Peter Konrath , Bertrand Vergne , Nicolas Dheilly 13ème EPF, Jun 2010, Saint-Nazaire, France Communication dans un congrès hal-00618701v1
	SiC BJT driver applied to a 2 kW inverter: Performances and limitations Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson , Bruno Allard 6th CIPS, Mar 2010, Nuremberg, Germany Communication dans un congrès hal-00579223v1
	Graded Etched Junction Termination for SiC Thyristors Gontran Pâques , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker , Sigo Scharnholz European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), Aug 2010, Oslo, Norway Communication dans un congrès hal-04347104v1
	Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection Duy Minh Nguyen , Gontran Pâques , Nicolas Dheilly , Christophe Raynaud , Dominique Tournier CSCRM, Aug 2010, Oslo, Norway Communication dans un congrès hal-00661470v1
	State of the art of High Temperature Power Electronics Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua Microtherm, Jun 2009, Lodz, Poland. pp.8-17 Communication dans un congrès hal-00413349v1
	A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson CSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩ Communication dans un congrès hal-00496976v1
	SiC JFET for high temperature power switches Dominique Bergogne , Dominique Tournier , Rami Mousa , Mohsen Shafiee Khoor , Dominique Planson 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4 Communication dans un congrès hal-00373058v1
	Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters Dominique Bergogne , Hervé Morel , Dominique Tournier , Bruno Allard , Dominique Planson 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2 Communication dans un congrès hal-00372982v1
	Current limiting with SiC JFET structures Dominique Tournier , Dominique Bergogne , Asif Hamoud , Dominique Planson , Rami Mousa 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5 Communication dans un congrès hal-00373046v1
	Modeling and high temperature characterization of SiC-JFET Rami Mousa , Dominique Planson , Hervé Morel , Bruno Allard , Christophe Raynaud IEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩ Communication dans un congrès hal-00369420v1
	Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Hassan Jawad , Pascal Bevilacqua ECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩ Communication dans un congrès hal-00391369v1
	Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analyses Christophe Raynaud , D M Nguyen , Pierre Brosselard , A Pérez-Tomás , Dominique Planson European Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain Communication dans un congrès hal-03331775v1
	SiC Power Semiconductor Devices for new Applications in Power Electronics Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Nicolas Dheilly , Hervé Morel 13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩ Communication dans un congrès hal-00373016v1
	Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩ Communication dans un congrès hal-02958620v1
	New Applications in Power Electronics Based on SiC Power Devices Hervé Morel , Dominique Bergogne , Dominique Planson , Bruno Allard , Régis Meuret ICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩ Communication dans un congrès hal-02958610v1
	Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC D M Nguyen , Christophe Raynaud , Mihai Lazar , H Vang , Dominique Planson ICSCRM'2007, Oct 2007, Otsu, Japan Communication dans un congrès hal-02961607v1
	Ni-Al Ohmic contact to p-type 4H-SiC Heu Vang , Mihai Lazar , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu 2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩ Communication dans un congrès hal-03316263v1
	Deep SiC etching with RIE Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu E-MRS 2006, May 2006, Nice, France. pp.3886392 Communication dans un congrès hal-03305997v1
	Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC Erwan Oliviero , Mihai Lazar , Heu Vang , Christiane Dubois , Pierre Cremilleu CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.611-614, ⟨10.4028/www.scientific.net/MSF.556-557.611⟩ Communication dans un congrès hal-00368931v1
	High temperature operating converter Dominique Bergogne , Pascal Bevilacqua , Dominique Planson , Hervé Morel 4th CIPS, Jun 2006, Naples, Italy. pp.201-204 Communication dans un congrès hal-00413394v1
	Towards an integrated inverter based on lateral JFET SiC J. Gié , Mihai Lazar , Dominique Planson , Dominique Bergogne , Pascal Bevilacqua 4th CIPS, Jun 2006, Naples, Italy. pp.171-176 Communication dans un congrès hal-00413390v1
	Current sensing for SiC Power Devices Dominique Tournier , Miquel Vellvehi , Philippe Godignon , Josep Montserrat , Dominique Planson CSCRM, Sep 2005, Pittsburgh, PA, United States. pp.1215-1218 Communication dans un congrès hal-00391433v1
	300 °C operating junction temperature inverter leg investigations Dominique Bergogne , Pascal Bevilacqua , Sabrine M'Rad , Dominique Planson , Hervé Morel EPE, Sep 2005, Dresden, Germany Communication dans un congrès hal-00413402v1
	A 3.5 kV thyristor in 4H-SiC with a JTE periphery Pierre Brosselard , Thierry Bouchet , Dominique Planson , Sigo Scharnholz , Gontran Pâques European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy Communication dans un congrès hal-02953080v1
	Silicon Carbide Controlled Current Limiter, Current Limitation Strategies, Foreseen Applications and Benefits Dominique Planson , Dominique Tournier , Jean-Pierre Chante , Pascal Bevilacqua , Christophe Raynaud International Power Electronics and Motion Control (IPEMC'04), Aug 2004, Xi'an, China Communication dans un congrès hal-02468376v1
	P-type SiC layers formed by VLS induced selective epitaxial growth Mihai Lazar , C Jacquier , Ch Dubois , Christophe Raynaud , G Ferro European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy Communication dans un congrès hal-02953086v1
	Design and simulation of a planar anode GTO thyristor on SiC Pierre Brosselard , Dominique Planson , Sigo Scharnholz , V. Zorngiebel , Mihai Lazar CAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩ Communication dans un congrès hal-00410085v1
	Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination G Brezeanu , Philippe Godignon , E Dimitrova , C Raynaud , Dominique Planson International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France Communication dans un congrès hal-02937545v1
	Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment Marie-Laure Locatelli , Karine Isoird , Sorin Dinculescu , Vincent Bley , Thierry Lebey 10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France Communication dans un congrès hal-02492270v1
	Silicon Carbide specific components for power electronics system protection J.-P Chante , Dominique Planson , Christophe Raynaud , Marie-Laure Locatelli , M. Lazar International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02503449v1
	Current limitation with SiC devices D Tournier , P. Godignon , Dominique Planson , F. Nallet , J. Millán 10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France Communication dans un congrès hal-02497590v1
	Electrothermal simulations of silicon carbide current limiting devices Dominique Planson , J.P. Chante , M. Lazar , P. Brosselard , Christophe Raynaud 2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩ Communication dans un congrès hal-02498210v1
	SiC-based current limiter devices Jean-Pierre Chante , Dominique Tournier , Dominique Planson , Christophe Raynaud , Mihai Lazar International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩ Communication dans un congrès hal-04032970v1
	Active clamping of IGBT: capacitor replaces TRANSIL diodes Pierre Lefranc , Dominique Bergogne , Dominique Planson , Bruno Allard , Hervé Morel 10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France Communication dans un congrès hal-02497603v1
	Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension Christophe Raynaud , M. Lazar , Dominique Planson , J.-P Chante , Z. Sassi International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02498145v1
	The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study. M Lazar , G Cardinali , C Raynaud , A Poggi , Dominique Planson International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France Communication dans un congrès hal-02941715v1
	Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor Pierre Brosselard , Volker Zorngiebel , Dominique Planson , Sigo Scharnholz , J.-P Chante International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02503456v1
	On chip temperature monitoring of a SiC current limiter Dominique Tournier , Philippe Godignon , José Millán , Jean-Pierre Chante , Dominique Planson International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02949618v1
	SiC On Insulator as substrate for power Schottky diodes N. Daval , F Templier , F. Letertre , Dominique Planson , Léa Di Cioccio European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02464356v1
	Fabrication and Characterisation of High Voltage SiC-Thyristors Volker Zorngiebel , S. Scharnholz , E. Spahn , P Brosselard , Jean-Pierre Chante European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02485104v1
	Limiteur de courant à forte densité de puissance en carbure de silicium Dominique Tournier , Philippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud Electronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France Communication dans un congrès hal-04398450v1
	Characterization of a 4H-SiC High Power Density Controlled Current Limiter Dominique Tournier , Xavier Jorda , Josep Montserrat , Dominique Planson , Christophe Raynaud European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02458130v1
	COMPOSANT NνN POUR L'ETUDE DE LA ZCEM (ZONE DE CHARGE D'ESPACE MIXTE) DES TRANSISTORS MOS Guillaume Verneau , Laurent Aubard , Thierry Bouchet , Jacques Arnould , Pierre Brosselard Electronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France Communication dans un congrès hal-04390458v1
	OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension S.R. Wang , Christophe Raynaud , Dominique Planson , Mihai Lazar , Jean-Pierre Chante European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02464381v1
	Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device F. Nallet , P. Godignon , Dominique Planson , Christophe Raynaud , J.P. P Chante 14th International Symposium on Power Semiconductor Devices and ICs, Jun 2002, Sante Fe, United States. pp.209-212, ⟨10.1109/ISPSD.2002.1016208⟩ Communication dans un congrès hal-02471269v1
	Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC Roberta Nipoti , Francesco Moscatelli , Andrea Scorzoni , Antonella Poggi , Gian Carlo Cardinali 2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩ Communication dans un congrès hal-02485106v1
	Substrat SiCOI : Avancées vers les applications « System on Chip » Nicolas Daval , François Templier , Fabrice Letertre , Marie-Laure Locatelli , Dominique Planson EPF2002 - Colloque 2002, Electronique de Puissance du Futur, Nov 2002, Montpellier, France Communication dans un congrès hal-04400220v1
	A 4H-SiC high-power-density VJFET as controlled current limiter Dominique Tournier , Philippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud Industry Applications Society (IAS'02), Oct 2002, Pittsburgh (Pennsylvania), United States. pp.2248-2251 Communication dans un congrès hal-02477074v1
	A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates François Templier , Nicolas Daval , Léa Di Cioccio , Daniel Bourgeat , Fabrice Letertre 2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K7.9⟩ Communication dans un congrès hal-02298409v1
	Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization K Isoird , M Lazar , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02975956v1
	Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing Mihai Lazar , Karine Isoird , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud 43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States Communication dans un congrès hal-02275712v1
	Experimental characterization of a 4H-SiC high voltage current limiting device Franck Nallet , Dominique Planson , Philippe Godignon , Marie-Laure Locatelli , Mihai Lazar European Materials Society (E-MRS Spring Meeting) 2001, symposium F, Jun 2001, Strasbourg, France Communication dans un congrès hal-03714731v1
	Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02471274v1
	Study based on the numerical simulation of a 5 kV asymmetrical 4H-SiC thyristor for high power pulses application N. Arssi , M.L. Locatelli , Dominique Planson , J.P. Chante , V. Zorngiebel CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.341-344, ⟨10.1109/SMICND.2001.967479⟩ Communication dans un congrès hal-02145398v1
	4H-SiC bipolar power diodes realized by ion implantation M. Lazar , Dominique Planson , K. Isoird , Marie-Laure Locatelli , Christophe Raynaud CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩ Communication dans un congrès hal-02145397v1
	Realization of a High Current and Low RON 600V Current Limiting Device F Nallet , P Godignon , Dominique Planson , Christophe Raynaud , Jean-Pierre P Chante International Conference on Silicon Carbide and Related Materials, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02975963v1
	A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects M. Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02476227v1
	Simulation study of a new current limiting device : a vertical alpha-SiC etched JFET - Controlled Current Limiter Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02476207v1
	Study of 6H-SiC high voltage bipolar diodes under reverse biases Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France Communication dans un congrès hal-03712596v1
	High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72 Communication dans un congrès hal-02151711v1
	Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components Dominique Planson , S. Margenat , F. Nallet , Hervé Morel , Marie-Laure Locatelli 3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩ Communication dans un congrès hal-04386919v1
	Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications F. Nallet , A. Senes , Dominique Planson , Marie-Laure Locatelli , J.P. Chante 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings, May 2000, Toulouse, France. pp.287-290, ⟨10.1109/ISPSD.2000.856827⟩ Communication dans un congrès hal-02972084v1
	Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications F. Nallet , A Sénès , Dominique Planson , M.L. Locatelli , J.P. Chante 3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.396-401, ⟨10.1109/IPEMC.2000.885436⟩ Communication dans un congrès hal-04386905v1
	Silicon carbide power devices J.P. Chante , M.L. Locatelli , Dominique Planson , L. Ottaviani , E. Morvan 1998 International Semiconductor Conference. CAS'98 Proceedings, Oct 1998, Sinaia, Romania. pp.125-134, ⟨10.1109/SMICND.1998.732305⟩ Communication dans un congrès hal-04277218v1
	Study of Silicon Carbide high voltage ability: experimental results on expitaxial-emitter and implanted-emitter diodes Marie-Laure Locatelli , Sylvie Ortolland , Frédéric Lanois , Dominique Planson , Thierry Billon International Seminar on Silicon Carbide Semiconductor and SiC-based devices, Sep 1995, Novgorod, Russia Communication dans un congrès hal-02972067v1
	The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC A A Lebedev , A M Strel'Chuk , S. Ortolland , Christophe Raynaud , Marie-Laure Locatelli International Conference on Silicon Carbide and Related Materials ICSCRM'95, Sep 1995, Kyoto, Japan Communication dans un congrès hal-03712441v1
	A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS Shan-Qi Zhao , Dominique Planson , Jean-Pierre Chante 7th European Simulation Symposium (ESS-1995), Oct 1995, Erlangen-Nuremberg, Germany Communication dans un congrès hal-02968512v1

	Realization and characterization of vertical PIN diode on 100 diamond Florent Sevely , Josiane Tasselli , Karine Isoird , Luong Viêt Phung , Camille Sonneville 33rd International Conference on Diamond and Carbon Materials, Sep 2023, Palma, Spain. , 2023 Poster de conférence hal-04193251v1

	Silicon carbide applications in power electronics Marie-Laure Locatelli , Dominique Planson Robert Perret. Power Electronics Semiconductor Devices, Wiley-ISTE, pp.185-265, 2009 Chapitre d'ouvrage hal-00661525v1
	Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation Christophe Raynaud , Duy Minh Nguyen , Nicolas Dheilly , Dominique Tournier , Pierre Brosselard Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009 Chapitre d'ouvrage hal-00661529v1
	Applications du carbure de silicium en électronique de puissance Marie-Laure Locatelli , Dominique Planson Robert Perret. Mise en oeuvre des composants électroniques de puissance, HERMES, pp.243-324, 2003 Chapitre d'ouvrage hal-03925159v1

	FABRICATION D’UN COMPOSANT EMETTEUR DE RAYONNEMENT A PARTIR D’UN SUBSTRAT DE CARBURE DE SILICIUM Mihai Lazar , Dominique Planson , Hervé Morel , Christophe Couteau France, N° de brevet: FR2201064. 2022 Brevet hal-03702870v1
	CREATION D’UNE FENETRE DE SORTIE DE RAYONNEMENT POUR UN COMPOSANT PHOTOEMETTEUR Mihai Lazar , Dominique Planson , Hervé Morel , Gilles Lerondel , Komla Dunyo Nomenyo France, N° de brevet: FR2201067. 2022 Brevet hal-03702862v1

Dominique Planson

Présentation

Publications

Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs

Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes

First results on 1.2 kV SiC MOSFET body diode robustness tests

Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy

Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method

Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

Capacitance temperature dependence analysis of GaN-on-Si power transistors

Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes

Investigation of SiC thyristors with varying amplifying gate design

Edge terminations for 4H-SiC power devices: a critical issue

Static and switching characteristics of 10 kV-class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC)

Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts

High-Voltage SiC-JFET Fabrication and Full Characterization

10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization

Subthreshold Drain current hysteresis of planar SiC MOSFETs

Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors

Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode

Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode

Silicon Carbide Technology of MESFET-Based Power Integrated Circuits

Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

OBIC Technique Applied to Wide Bandgap Semiconductors from 100 K up to 450 K

Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation

SiC integrated circuits for smart power converter

Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections

Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption

Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti3SiC2 Phase

Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase

Optimization of VLS Growth Process for 4H-SiC P/N Junctions

Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode

The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices

A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing

4H-SiC VJFETs with Self-Aligned Contacts

Original Field Plate to Decrease the Maximum Electric Field Peak for High-Voltage Diamond Schottky Diode

Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

Short-Circuit Capability Exploration of Silicon Carbide Devices

VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

High termination efficiency using polyimide trench for high voltage diamond Schottky diode

Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

2D Electric field imagery in 4H-SiC power diodes using OBIC technique

Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices

Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts

Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

Die attach using silver sintering. Practical implementation and analysis

Pulse Current Characterization of SiC GTO Thyristors with Etched JTE

Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

3D TCAD Simulations for More Efficient SiC Power Devices Design

Towards Very High Voltage SiC Power Devices

Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport

p-Doped SiC Growth on Diamond Substrate by VLS Transport

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport

Parallel and serial association of SiC light triggered thyristors

Comparison of SiC Thyristors with Differently Etched JTEs

Pulse Characterization of Optically Triggered SiC Thyristors

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements

4H-silicon carbide thin junction based ultraviolet photodetectors

Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE

Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC

600 V PiN diodes fabricated using on-axis 4H silicon carbide

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Pressureless Silver Sintering Die-Attach for SiC Power Devices

Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p⁺⁺ Emitters

Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase

A Study on the Chemistry of Epitaxial Ti₃SiC₂ Formation on 4H-SiC Using Al-Ti Annealing

Electrical Characterization of PiN Diodes with p⁺ Layer Selectively Grown by VLS Transport

4H-SiC P⁺N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

SiC Power Devices on QUASIC and SiCOI Smart-Cut^® Substrates: First Demonstrations

Realization of a High-Current and Low R_ON 600V Current-Limiting Device

Improved Annealing Process for 6H-SiC p⁺-n Junction Creation by Al Implantation