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Theoretical and Experimental Evidences of Sequential Phase Formation during Sub-Nanometric-Thick Film Reactive Diffusion
Alain Portavoce
,
Guy Treglia
,
Boubekeur Lalmi
,
Christophe Girardeaux
,
Dominique Mangelinck
,
et al.
Article dans une revue
hal-02393995v1
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Evolution of early formed NiSi2 during the reaction between Ni(W, Pt) films and Si (001)
T. Luo
,
M. Bertoglio
,
Christophe Girardeaux
,
Dominique Mangelinck
Article dans une revue
hal-02044789v1
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Revealing hot tearing mechanism for an additively manufactured high-entropy alloy via selective laser melting
Z. Sun
,
X.P. Tan
,
M. Descoins
,
Dominique Mangelinck
,
S.B. Tor
,
et al.
Article dans une revue
hal-02403163v1
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Further Insight into Interfacial Interactions in Iron/Liquid Zn-Al System
David Zapico-Álvarez
,
Patrick Barges
,
Céline Musik
,
Florence Bertrand
,
Jean-Michel Mataigne
,
et al.
Article dans une revue
hal-03071195v1
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Atom probe tomography of nanoscale electronic materials
D. J. Larson
,
T. J. Prosa
,
D. E. Perea
,
K. Inoue
,
Dominique Mangelinck
Article dans une revue
hal-01435099v1
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Thermoelectric power factor of Ge1-xSnx thin films
A. Portavoce
,
H. Khelidj
,
N. Oueldna
,
S. Amhil
,
M. Bertoglio
,
et al.
Article dans une revue
hal-03046444v1
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Al–Cu intermetallic coatings processed by sequential metalorganic chemical vapour deposition and post-deposition annealing
Lyacine Aloui
,
Thomas Duguet
,
Fanta Haidara
,
Marie-Christine Record
,
Diane Samélor
,
et al.
Article dans une revue
hal-01756334v1
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On the influence of Ni(Pt)Si thin film formation on agglomeration threshold temperature and its impact on 3D imaging technology integration
M. Grégoire
,
F. Morris Anak
,
S. Verdier
,
K. Dabertrand
,
S. Guillemin
,
et al.
Article dans une revue
hal-04285798v1
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Formation of C49-TiSi2 in flash memories : a nucleation controlled phenomenon ?
Dominique Mangelinck
,
P. Gas
,
T. Badéche
,
E. Taing
,
F. Nemouchi
,
et al.
Article dans une revue
istex
hal-01951275v1
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Reaction and diffusion at interfaces of micro- and nanostructured materials
P. Gas
,
C Girardeaux
,
D. Mangelinck
,
A. Portavoce
Article dans une revue
istex
hal-02393446v1
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Dewetting of Ni silicide thin film on Si substrate: In-situ experimental study and phase-field modeling
Jianbao Gao
,
Annie Malchère
,
Shenglan Yang
,
Andrea Campos
,
Ting Luo
,
et al.
Article dans une revue
hal-03454993v1
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First stages of the formation of Ni silicide by atom probe tomography
K. Hoummada
,
E. Cadel
,
Dominique Mangelinck
,
C. Perrin-Pellegrino
,
D. Blavette
,
et al.
Article dans une revue
hal-01928898v1
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Formation of Ni silicide at room temperature studied by laser atom probe tomography: Nucleation and lateral growth
K. Hoummada
,
Dominique Mangelinck
,
E. Cadel
,
C. Perrin-Pellegrino
,
D. Blavette
,
et al.
Article dans une revue
istex
hal-01928891v1
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Redistribution of Alloy Elements during Nickel Silicide Formation: Benefit of Atom Probe Tomography
C. Perrin
,
K. Hoummada
,
I. Blum
,
A. Portavoce
,
M. Descoins
,
et al.
Article dans une revue
hal-02394008v1
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Impurity and defect interactions during laser thermal annealing in Ge
R. Milazzo
,
G. Impellizzeri
,
D. Piccinotti
,
A. La Magna
,
G. Fortunato
,
et al.
Article dans une revue
hal-02385285v1
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Effect of Pd on the Ni(2)Si stress relaxation during the Ni-silicide formation at low temperature
Magali Putero
,
Dominique Mangelinck
Article dans une revue
hal-01951267v1
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Subnanometric Si film reactive diffusion on Ni
A. Portavoce
,
B. Lalmi
,
G. Tréglia
,
C. Girardeaux
,
D. Mangelinck
,
et al.
Article dans une revue
hal-02386120v1
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A multi-scale study of the interaction of Sn solutes with dislocations during static recovery in α-Fe
N. Mavrikakis
,
C. Detlefs
,
P.K. Cook
,
M. Kutsal
,
A.P.C. Campos
,
et al.
Article dans une revue
hal-02403188v1
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Nucleation of boron clusters in implanted silicon
O. Cojocaru-Miŕdin
,
Dominique Mangelinck
,
D. Blavette
Article dans une revue
hal-01928877v1
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Progress in the understanding of Ni silicide formation for advanced MOS structures
Dominique Mangelinck
,
K. Hoummada
,
F. Panciera
,
M. El Kousseifi
,
I. Blum
,
et al.
Article dans une revue
istex
hal-01951259v1
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Methods for Gibbs triple junction excess determination: Ti segregation in CoSi2 thin film
Hannes Zschiesche
,
Ahmed Charai
,
Claude Alfonso
,
Dominique Mangelinck
Article dans une revue
hal-03060639v1
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Selection of the first Ni silicide phase by controlling the Pt incorporation in the intermixed layer
Mike El Kousseifi
,
Khalid Hoummada
,
Maxime Bertoglio
,
Dominique Mangelinck
Article dans une revue
hal-01435136v1
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GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium
Timothée Molière
,
Alexandre Jaffré
,
José Alvarez
,
Denis Mencaraglia
,
James P. Connolly
,
et al.
Article dans une revue
hal-01444245v1
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Self-diffusion in single crystalline silicon nanowires
T. Südkamp
,
G. Hamdana
,
M. Descoins
,
Dominique Mangelinck
,
H. Wasisto
,
et al.
Article dans une revue
hal-01728694v1
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Nitrogen enhanced thermal stability of nickel monosilicide
A. S. Zuruzi
,
D. Z. Chi
,
Dominique Mangelinck
Article dans une revue
hal-01694196v1
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The nitrogen effect on the oxidation behaviour of Ti6242S titanium-based alloy: contribution of atom probe tomography
Charlotte Dupressoire
,
M. Descoins
,
Aurélie Vande Put
,
Dominique Mangelinck
,
P. Emile
,
et al.
Article dans une revue
hal-03452341v1
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Diffusion and Redistribution of Boron in Nickel Silicides
Ivan Blum
,
Alain Portavoce
,
Lee Chow
,
Khalid Hoummada
,
Dominique Mangelinck
Article dans une revue
hal-02393983v1
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Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact
Khalid Hoummada
,
Gamra Tellouche
,
Ivan Blum
,
Alain Portavoce
,
Marion Descoins
,
et al.
Article dans une revue
istex
hal-02385371v1
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Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon
R. Simola
,
Dominique Mangelinck
,
A. Portavoce
,
J. Bernardini
,
P. Fornara
AIP Conference Proceedings, 2006, 866
Article dans une revue
hal-02406692v1
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Analysis of superconducting silicon epilayers by atom probe tomography: composition and evaporation field
Khalid Hoummada
,
Franck Dahlem
,
Federico Panciera
,
Etienne Bustarret
,
C. Marcenat
,
et al.
Article dans une revue
hal-04124377v1
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