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Theoretical and Experimental Evidences of Sequential Phase Formation during Sub-Nanometric-Thick Film Reactive Diffusion

Alain Portavoce , Guy Treglia , Boubekeur Lalmi , Christophe Girardeaux , Dominique Mangelinck , et al.
Solid State Phenomena, 2011, 172-174, pp.633-639. ⟨10.4028/www.scientific.net/SSP.172-174.633⟩
Article dans une revue hal-02393995v1

Evolution of early formed NiSi2 during the reaction between Ni(W, Pt) films and Si (001)

T. Luo , M. Bertoglio , Christophe Girardeaux , Dominique Mangelinck
Micro and Nano Engineering, 2018, 1, pp.49-55. ⟨10.1016/j.mne.2018.10.004⟩
Article dans une revue hal-02044789v1
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Revealing hot tearing mechanism for an additively manufactured high-entropy alloy via selective laser melting

Z. Sun , X.P. Tan , M. Descoins , Dominique Mangelinck , S.B. Tor , et al.
Scripta Materialia, 2019, 168, pp.129-133. ⟨10.1016/j.scriptamat.2019.04.036⟩
Article dans une revue hal-02403163v1
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Further Insight into Interfacial Interactions in Iron/Liquid Zn-Al System

David Zapico-Álvarez , Patrick Barges , Céline Musik , Florence Bertrand , Jean-Michel Mataigne , et al.
Metallurgical and Materials Transactions A, 2020, 51 (5), pp.2391-2403. ⟨10.1007/s11661-020-05669-5⟩
Article dans une revue hal-03071195v1

Atom probe tomography of nanoscale electronic materials

D. J. Larson , T. J. Prosa , D. E. Perea , K. Inoue , Dominique Mangelinck
MRS Bulletin, 2016, 41 (1), pp.30-34. ⟨10.1557/mrs.2015.308⟩
Article dans une revue hal-01435099v1

Thermoelectric power factor of Ge1-xSnx thin films

A. Portavoce , H. Khelidj , N. Oueldna , S. Amhil , M. Bertoglio , et al.
Materialia, 2020, 14, pp.100873. ⟨10.1016/j.mtla.2020.100873⟩
Article dans une revue hal-03046444v1
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Al–Cu intermetallic coatings processed by sequential metalorganic chemical vapour deposition and post-deposition annealing

Lyacine Aloui , Thomas Duguet , Fanta Haidara , Marie-Christine Record , Diane Samélor , et al.
Applied Surface Science, 2012, 258 (17), pp.6425-6430. ⟨10.1016/j.apsusc.2012.03.053⟩
Article dans une revue hal-01756334v1
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On the influence of Ni(Pt)Si thin film formation on agglomeration threshold temperature and its impact on 3D imaging technology integration

M. Grégoire , F. Morris Anak , S. Verdier , K. Dabertrand , S. Guillemin , et al.
Microelectronic Engineering, 2023, 271-272, pp.111937. ⟨10.1016/j.mee.2023.111937⟩
Article dans une revue hal-04285798v1

Formation of C49-TiSi2 in flash memories : a nucleation controlled phenomenon ?

Dominique Mangelinck , P. Gas , T. Badéche , E. Taing , F. Nemouchi , et al.
Microelectronic Engineering, 2003, 70, pp.220-225. ⟨10.1016/S0167-9317(03)00435-0⟩
Article dans une revue istex hal-01951275v1

Reaction and diffusion at interfaces of micro- and nanostructured materials

P. Gas , C Girardeaux , D. Mangelinck , A. Portavoce
Materials Science and Engineering: B, 2003, 101 (1-3), pp.43-48. ⟨10.1016/S0921-5107(02)00709-2⟩
Article dans une revue istex hal-02393446v1
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Dewetting of Ni silicide thin film on Si substrate: In-situ experimental study and phase-field modeling

Jianbao Gao , Annie Malchère , Shenglan Yang , Andrea Campos , Ting Luo , et al.
Acta Materialia, 2022, 223, pp.117491. ⟨10.1016/j.actamat.2021.117491⟩
Article dans une revue hal-03454993v1

First stages of the formation of Ni silicide by atom probe tomography

K. Hoummada , E. Cadel , Dominique Mangelinck , C. Perrin-Pellegrino , D. Blavette , et al.
Applied Physics Letters, 2006, 89 (18), ⟨10.1063/1.2370501⟩
Article dans une revue hal-01928898v1

Formation of Ni silicide at room temperature studied by laser atom probe tomography: Nucleation and lateral growth

K. Hoummada , Dominique Mangelinck , E. Cadel , C. Perrin-Pellegrino , D. Blavette , et al.
Microelectronic Engineering, 2007, 84 (11), pp.2517--2522. ⟨10.1016/j.mee.2007.05.051⟩
Article dans une revue istex hal-01928891v1

Redistribution of Alloy Elements during Nickel Silicide Formation: Benefit of Atom Probe Tomography

C. Perrin , K. Hoummada , I. Blum , A. Portavoce , M. Descoins , et al.
Defect and Diffusion Forum, 2011, 309-310, pp.161-166. ⟨10.4028/www.scientific.net/DDF.309-310.161⟩
Article dans une revue hal-02394008v1

Impurity and defect interactions during laser thermal annealing in Ge

R. Milazzo , G. Impellizzeri , D. Piccinotti , A. La Magna , G. Fortunato , et al.
Journal of Applied Physics, 2016, 119 (4), pp.045702. ⟨10.1063/1.4940737⟩
Article dans une revue hal-02385285v1

Effect of Pd on the Ni(2)Si stress relaxation during the Ni-silicide formation at low temperature

Magali Putero , Dominique Mangelinck
Applied Physics Letters, 2012, 101 (11), pp.11910. ⟨10.1063/1.4752716⟩
Article dans une revue hal-01951267v1

Subnanometric Si film reactive diffusion on Ni

A. Portavoce , B. Lalmi , G. Tréglia , C. Girardeaux , D. Mangelinck , et al.
Applied Physics Letters, 2009, 95 (2), pp.023111. ⟨10.1063/1.3177187⟩
Article dans une revue hal-02386120v1
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A multi-scale study of the interaction of Sn solutes with dislocations during static recovery in α-Fe

N. Mavrikakis , C. Detlefs , P.K. Cook , M. Kutsal , A.P.C. Campos , et al.
Acta Materialia, 2019, 174, pp.92-104. ⟨10.1016/j.actamat.2019.05.021⟩
Article dans une revue hal-02403188v1

Nucleation of boron clusters in implanted silicon

O. Cojocaru-Miŕdin , Dominique Mangelinck , D. Blavette
Journal of Applied Physics, 2009, 106 (11), ⟨10.1063/1.3265998⟩
Article dans une revue hal-01928877v1

Progress in the understanding of Ni silicide formation for advanced MOS structures

Dominique Mangelinck , K. Hoummada , F. Panciera , M. El Kousseifi , I. Blum , et al.
physica status solidi (a), 2014, 211 (1), pp.152-165. ⟨10.1002/pssa.201300167⟩
Article dans une revue istex hal-01951259v1
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Methods for Gibbs triple junction excess determination: Ti segregation in CoSi2 thin film

Hannes Zschiesche , Ahmed Charai , Claude Alfonso , Dominique Mangelinck
Journal of Materials Science, 2020, 55 (27), pp.13177-13192. ⟨10.1007/s10853-020-04856-4⟩
Article dans une revue hal-03060639v1

Selection of the first Ni silicide phase by controlling the Pt incorporation in the intermixed layer

Mike El Kousseifi , Khalid Hoummada , Maxime Bertoglio , Dominique Mangelinck
Acta Materialia, 2016, 106, pp.193-198. ⟨10.1016/j.actamat.2016.01.004⟩
Article dans une revue hal-01435136v1
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GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium

Timothée Molière , Alexandre Jaffré , José Alvarez , Denis Mencaraglia , James P. Connolly , et al.
Journal of Applied Physics, 2017, 121 (3), pp.035704. ⟨10.1063/1.4974538⟩
Article dans une revue hal-01444245v1

Self-diffusion in single crystalline silicon nanowires

T. Südkamp , G. Hamdana , M. Descoins , Dominique Mangelinck , H. Wasisto , et al.
Journal of Applied Physics, 2018, 123 (16), ⟨10.1063/1.4996987⟩
Article dans une revue hal-01728694v1

Nitrogen enhanced thermal stability of nickel monosilicide

A. S. Zuruzi , D. Z. Chi , Dominique Mangelinck
physica status solidi (a), 2017, 214 (5), ⟨10.1002/pssa.201600710⟩
Article dans une revue hal-01694196v1
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The nitrogen effect on the oxidation behaviour of Ti6242S titanium-based alloy: contribution of atom probe tomography

Charlotte Dupressoire , M. Descoins , Aurélie Vande Put , Dominique Mangelinck , P. Emile , et al.
MATEC Web of Conferences, 2020, 321, pp.06005. ⟨10.1051/matecconf/202032106005⟩
Article dans une revue hal-03452341v1

Diffusion and Redistribution of Boron in Nickel Silicides

Ivan Blum , Alain Portavoce , Lee Chow , Khalid Hoummada , Dominique Mangelinck
Defect and Diffusion Forum, 2012, 323-325, pp.415-420. ⟨10.4028/www.scientific.net/DDF.323-325.415⟩
Article dans une revue hal-02393983v1

Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact

Khalid Hoummada , Gamra Tellouche , Ivan Blum , Alain Portavoce , Marion Descoins , et al.
Microelectronic Engineering, 2013, 107, pp.184-189. ⟨10.1016/j.mee.2012.12.008⟩
Article dans une revue istex hal-02385371v1
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Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon

R. Simola , Dominique Mangelinck , A. Portavoce , J. Bernardini , P. Fornara
AIP Conference Proceedings, 2006, 866
Article dans une revue hal-02406692v1
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Analysis of superconducting silicon epilayers by atom probe tomography: composition and evaporation field

Khalid Hoummada , Franck Dahlem , Federico Panciera , Etienne Bustarret , C. Marcenat , et al.
European Physical Journal: Applied Physics, 2023, 98, pp.40. ⟨10.1051/epjap/2023230018⟩
Article dans une revue hal-04124377v1