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63 résultats
Edge and vertical surface emitting lasers around 2.0-2.5 m and their applicationsPhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2001, 359 (1780), pp.581 - 597. ⟨10.1098/rsta.2000.0744⟩
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istex
hal-01800009v1
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Development of a millimeter-long Travelling wave THz photomixerJournal of Lightwave Technology, 2021, 39 (14), pp.4700-4709. ⟨10.1109/JLT.2021.3078226⟩
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hal-03264678v1
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Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performanceEuropean Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, _, France
Communication dans un congrès
hal-00361543v1
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Dirac antidot superlattices for electrons in III-V semiconductors37th European Materials Research Society Spring Meeting, E-MRS Spring 2019, May 2019, Nice, France
Communication dans un congrès
hal-04485976v1
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Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti capJournal of Applied Physics, 2008, 104 (10), pp.103523. ⟨10.1063/1.3010305⟩
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hal-00356975v1
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InAs/AlSb quantum cascade lasers on GaSb and InAsIntersubband transistions in quantum wells, 2003, Evotene, Switzerland
Communication dans un congrès
hal-01804841v1
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Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealingApplied Physics Letters, 2009, 94 (19), pp.191913. ⟨10.1063/1.3136849⟩
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hal-00471985v1
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Dry etching at IEMNEuronanolab Dry Etch Expert meeting, Dec 2019, Saclay, France. 2019
Poster de conférence
hal-03635035v1
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New diode laser for room temperature TDLAS in the MID-IR3rd International Conference on Tunable Diode Laser Spectroscopy (TDLS), 2001, Zermatt, Switzerland
Communication dans un congrès
hal-01797372v1
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Towards III-V semiconductor-based artificial grapheneCompound Semiconductor Week2021, CSW 2021, May 2021, Stockholm, Suède., May 2021, Stockholm, Sweden
Communication dans un congrès
hal-04485771v1
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3D micro-supercapacitor based on MnO2 electrodes on silicon substrate226th Meeting of the Electrochemical Society and XXIX Congreso de la Sociedad Mexicana de Electroquímica, 2014 ECS and SMEQ Joint International Meeting, 2014, Cancun, Mexico
Communication dans un congrès
hal-01015285v1
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Trace gas detection with antimonide-based quantum-well diode lasersSpectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy [1994-..], 2002, 58 (11), pp.2405-2412. ⟨10.1016/S1386-1425(02)00055-0⟩
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istex
hal-00324037v1
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High temperature GaInAsSb/GaAlAsSb quantum well continuous wave lasersInternational Conference on Mid-Infrared Optoelectronics Materials and Devices (MIOMD), 2001, Montpellier, France
Communication dans un congrès
hal-01798934v1
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Development of an highly distributed photoconductor for CW THz generation2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018), Sep 2018, Nagoya, Japon, Japan. pp.1-2, ⟨10.1109/IRMMW-THz.2018.8509954⟩
Communication dans un congrès
hal-04441982v1
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Study of Various PhotoResist for Bosch ProcessEuronanolab Dry Etch Expert meeting, Dec 2019, Saclay, France
Communication dans un congrès
hal-03635045v1
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Progrès récents dans les lasers à base de GaSb et leurs applications8e Journées Nationales Microélectronique Optronique, 2001, Aussois, France
Communication dans un congrès
hal-01805182v1
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TEM characterization of polysilicon and silicide fin fabrication processes of FinFETsActa Physica Polonica A, 2009, 116, pp.89-91
Article dans une revue
hal-00472000v1
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Semiconductor mid-infrared lasers working at high temperature Application to gas analysis2nd International Workshop on Laser and Fiber-Optical Networks Modelling, 2000, Kharkov, Ukraine
Communication dans un congrès
hal-01797381v1
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Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III–V semiconductorsNanotechnology, 2019, 30 (15), pp.155301. ⟨10.1088/1361-6528/aafd3f⟩
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hal-02133316v1
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Giant oxidation relief of Al-rich layers on cleaved mirrors of GaSb/Ga0.1Al0.9SbAs/GaInSbAs laser structuresApplied Physics Letters, 2006, 89 (8), pp.081103.1-081103.3. ⟨10.1063/1.2338002⟩
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hal-00328215v1
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Tunable diode laser for gas analysis in the 2-3 µm window at room temperature3rd International Conference on Mid-infrared Optoelectronics Materials and Devices (MIOMD), 1999, Aachen, Germany
Communication dans un congrès
hal-01799429v1
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UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFETECS Transactions, 2009, 19, pp.339-344. ⟨10.1149/1.3118961⟩
Article dans une revue
hal-00471999v1
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Metallic source/drain for advanced MOS architectures : from material engineering to device integrationSINANO-NANOSIL Workshop, Silicon-based CMOS and Beyond-CMOS Nanodevices, 2009, Athens, Greece
Communication dans un congrès
hal-00575267v1
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Gas analysis using room temperature CW lasers in the 2.2-2.4µm windowMid-infrared Network Meeting, 2000, Malvern, United Kingdom
Communication dans un congrès
hal-01797392v1
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Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layerThin Solid Films, 2012, 520, pp.4501-4505. ⟨10.1016/j.tsf.2012.02.076⟩
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istex
hal-00787381v1
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Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOIIEEE Electron Device Letters, 2009, 30, pp.1266-1268. ⟨10.1109/LED.2009.2033085⟩
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hal-00471974v1
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Metallic source/drain architecture for advanced MOS technology : an overview of METAMOS results8th Symposium Diagnostics & Yield : Advanced Silicon Devices and Technologies for ULSI Era, 2009, Warsaw, Poland
Communication dans un congrès
hal-00575696v1
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Application of the cryogenic etching for mold fabrication in Si substratesJournée Nationales sur les Technologies Emergentes en micronanofabrication (JNTE 2017), Nov 2017, Orléan, France. 2017
Poster de conférence
hal-01647675v1
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MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applicationsJournal of Crystal Growth, 2007, 301-302, pp.217-220. ⟨10.1016/j.jcrysgro.2006.11.235⟩
Article dans une revue
istex
hal-00285630v1
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Sputtered thin films for lithium ion microbatteries: recent results on TiN lithium barrier diffusion layer, Au negative and C-LiFePO4 positive electrodes226th Meeting of the Electrochemical Society and XXIX Congreso de la Sociedad Mexicana de Electroquímica, 2014 ECS and SMEQ Joint International Meeting, 2014, Cancun, Mexico
Communication dans un congrès
hal-01015287v1
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