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162

Didier Chaussende


 

  • Physical-chemistry of high temperature advanced materials, through the exploration of innovative crystal growth processes.
  • Special expertise on nitrides and carbides, wide bandgap semiconductors, MAX phases, diamond, using various synthesis processes from both the vapour phase and the liquid phase (CVD, MPCVD, CVT, PVT, LPE, TSSG ...).


Journal articles102 documents

  • G. Deffrennes, B. Gardiola, M. Allam, Didier Chaussende, A. Pisch, et al.. Critical assessment and thermodynamic modeling of the Al–C system. Calphad, Elsevier, 2019, 66, pp.101648. ⟨10.1016/j.calphad.2019.101648⟩. ⟨hal-02366921⟩
  • Joseph Kioseoglou, Hoang‐long Le‐tran, Stefanos Giaremis, Isabelle Gelard, Thierry Ouisse, et al.. Structural, Electronic and Vibrational Properties of Al4C3. physica status solidi (b), Wiley, 2019, 256 (10), pp.1900037. ⟨10.1002/pssb.201900037⟩. ⟨hal-02366916⟩
  • Gabriel Ferro, Didier Chaussende, Nikolaos Tsavdaris. Understanding Al incorporation into 4H-SiC during epitaxy. Journal of Crystal Growth, Elsevier, 2019, 507, pp.338-343. ⟨10.1016/j.jcrysgro.2018.11.034⟩. ⟨hal-02121592⟩
  • Simon Forster, Didier Chaussende, Karol Kalna. Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al4SiC4. ACS Applied Energy Materials, ACS, 2018, 2 (1), pp.715-720. ⟨10.1021/acsaem.8b01767⟩. ⟨hal-02366910⟩
  • Sven Tengeler, Bernhard Kaiser, Gabriel Ferro, Didier Chaussende, Wolfram Jaegermann. The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS. Applied Surface Science, Elsevier, 2018, 427, pp.480 - 485. ⟨10.1016/j.apsusc.2017.08.220⟩. ⟨hal-01615027⟩
  • Sven Tengeler, Bernhard Kaiser, Didier Chaussende, Wolfram Jaegermann. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes. Applied Surface Science, Elsevier, 2017, 400, pp.6 - 13. ⟨10.1016/j.apsusc.2016.12.136⟩. ⟨hal-01620939⟩
  • Hoang-Long Le-Tran, Eirini Sarigiannidou, Isabelle Gelard, Didier Chaussende. Vaporization and condensation in the Al4C3-SiC system. Journal of the European Ceramic Society, Elsevier, 2017, 37 (15), pp.4475 - 4482. ⟨10.1016/j.jeurceramsoc.2017.05.038⟩. ⟨hal-01620934⟩
  • Gabriel Ferro, Didier Chaussende. A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy. Scientific Reports, Nature Publishing Group, 2017, 7, pp.43069. ⟨10.1038/srep43069⟩. ⟨hal-01615178⟩
  • Shiqui Zhang, Lu Shi, Florian Mercier, O. Chaix-Pluchery, D. Chaussende, et al.. Conversion of MAX phase single crystals in highly porous carbides by high temperature chlorination. Ceramics International, Elsevier, 2017, 43 (11), pp.8246-8254. ⟨10.1016/j.ceramint.2017.03.153⟩. ⟨hal-01762237⟩
  • L. Pedesseau, O. Chaix-Pluchery, M. Modreanu, D. Chaussende, E. Sarigiannidou, et al.. Al 4 SiC 4 vibrational properties: density functional theory calculations compared to Raman and infrared spectroscopy measurements. Journal of Raman Spectroscopy, Wiley, 2017, 48 (6), pp.891-896. ⟨10.1002/jrs.5128⟩. ⟨hal-01485456⟩
  • Kanaparin Ariyawong, Christian Chatillon, Elisabeth Blanquet, Jean-Marc Dedulle, Didier Chaussende. A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth. CrystEngComm, Royal Society of Chemistry, 2016, 18 (12), pp.2119-2124. ⟨10.1039/c5ce02480c⟩. ⟨hal-01366561⟩
  • M.G. Tsoutouva, T. Duffar, D. Chaussende, M. Kamguem. Undercooling measurement and nucleation study of silicon droplets on various substrates. Journal of Crystal Growth, Elsevier, 2016. ⟨hal-01464054⟩
  • Kanaparin Ariyawong, Yun Ji Shin, Jean-Marc Dedulle, Didier Chaussende. Analysis of Macrostep Formation during Top Seeded Solution Growth of 4H-SiC. Crystal Growth & Design, American Chemical Society, 2016, 16 (6), pp.3231-3236. ⟨10.1021/acs.cgd.6b00155⟩. ⟨hal-01456078⟩
  • Dimitrios Zevgitis, Odette Chaix-Pluchery, Béatrice Doisneau, Mircea Modreanu, Joseph La Manna, et al.. Synthesis and Characterization of Al4SiC4: A “New” Wide Band Gap Semiconductor Material. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.974-977. ⟨hal-02012987⟩
  • Laurent Pedesseau, Jacky Even, Mircea Modreanu, Didier Chaussende, Erini Sarigiannidou, et al.. Al4SiC4 wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties. APL Materials, AIP Publishing 2015, 3 (12), pp.121101. ⟨10.1063/1.4936667⟩. ⟨hal-01236491⟩
  • T. Ouisse, L. Shi, B. Piot, B. Hackens, V. Mauchamp, et al.. Magnetotransport properties of nearly-free electrons in two-dimensional hexagonal metals and application to the M n + 1 A X n phases. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2015, 92 (4). ⟨hal-01986020⟩
  • Gediminas Liaugaudas, Donatas Dargis, Kestutis Jarašiunas, Nikolaos Tsavdaris, Eirini Sarigiannidou, et al.. Photoelectrical Parameters of a PVT Grown Bulk 15R-SiC Crystal at Different Stages of Growth. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.253-256. ⟨hal-02012973⟩
  • Nikolaos Tsavdaris, Kanaparin Ariyawong, Eirini Sarigiannidou, Jean Marc Dedulle, Odette Chaix-Pluchery, et al.. Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC. Materials Science Forum, Trans Tech Publications Inc., 2014, 806, pp.61-64. ⟨10.4028/www.scientific.net/MSF.806.61⟩. ⟨hal-02012985⟩
  • Lu Shi, T. Ouisse, E. Sarigiannidou, O. Chaix-Pluchery, H. Roussel, et al.. Synthesis of single crystals of V2AlC phase by high-temperature solution growth and slow cooling technique. Acta Materialia, Elsevier, 2014, 83, pp.304-309. ⟨10.1016/j.actamat.2014.10.018⟩. ⟨hal-01226018⟩
  • K. Alassaad, M. Vivona, V. Soulière, B. Doisneau, F. Cauwet, et al.. Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate. ECS Journal of Solid State Science and Technology, IOP Science, 2014, 3 (8), pp.P285 - P292. ⟨10.1149/2.0121408jss⟩. ⟨hal-01615319⟩
  • Nikolaos Tsavdaris, Kanaparin Ariyawong, Odette Chaix-Pluchery, Jean Marc Dedulle, Eirini Sarigiannidou, et al.. Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation. Materials Science Forum, Trans Tech Publications Inc., 2014, 778-780, pp.13-16. ⟨10.4028/www.scientific.net/MSF.778-780.13⟩. ⟨hal-02012874⟩
  • Jean-Marc Dedulle, Didier Chaussende, Kanaparin Ariyawong, Nikolaos Tsavdaris, Martin Seiss, et al.. Open Issues in SiC Bulk Growth. Materials Science Forum, Trans Tech Publications Inc., 2014, 778-780 (6), pp.3-8. ⟨hal-02012866⟩
  • Martin Seiss, Thierry Ouisse, Didier Chaussende. Spiral step dissociation on PVT grown SiC crystals. Materials Science Forum, Trans Tech Publications Inc., 2014, Vols. 778-780, pp.39-42. ⟨10.4028/www.scientific.net/MSF.778-780.39⟩. ⟨hal-01067413⟩
  • Gediminas Liaugaudas, Kestutis Jarašiunas, Nikolaos Tsavdaris, Eirini Sarigiannidou, Didier Chaussende. On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates. Materials Science Forum, Trans Tech Publications Inc., 2014, 778-780, pp.305-308. ⟨hal-02012879⟩
  • Gediminas Liaugaudas, Kestutis Jarašiunas, Nikolaos Tsavdaris, Eirini Sarigiannidou, Didier Chaussende. Nondestructive Evaluation of Photoelectrical Properties of a PVT Grown Bulk 15R-SiC Crystal. Materials Science Forum, Trans Tech Publications Inc., 2014, 806, pp.65-69. ⟨hal-02012974⟩
  • Kanaparin Ariyawong, Elisabeth Blanquet, Jean Marc Dedulle, Thierry Ouisse, Didier Chaussende. Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT. Materials Science Forum, Trans Tech Publications Inc., 2014, 778-780, pp.778-780. ⟨10.4028/www.scientific.net/MSF.778-780.35⟩. ⟨hal-01122442⟩
  • L. T. M. Hoa, T. Ouisse, D. Chaussende, M. Naamoun, A. Tallaire, et al.. Birefringence Microscopy of Unit Dislocations in Diamond. Crystal Growth & Design, American Chemical Society, 2014, 14 (11), pp.5761-5766. ⟨10.1021/cg5010193⟩. ⟨hal-01226020⟩
  • Nikolaos Tsavdaris, Kanaparin Ariyawong, Jean-Marc Dedulle, Eirini Sarigiannidou, Didier Chaussende. Macroscopic Approach to the Nucleation and Propagation of Foreign Polytype Inclusions during Seeded Sublimation Growth of Silicon Carbide. Crystal Growth & Design, American Chemical Society, 2014, 15 (1), pp.156-163. ⟨hal-02012984⟩
  • Xiaojian Li, H. Jacobson, Alexandre Boulle, D. Chaussende, A. Henry. Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC. ECS Journal of Solid State Science and Technology, IOP Science, 2014, 3 (4), pp.P75-P81. ⟨10.1149/2.012404jss⟩. ⟨hal-01226019⟩
  • Ather Mahmood, Cécile Naud, Clément Bouvier, Fanny Hiebel, Pierre Mallet, et al.. Epitaxial graphene morphologies probed by weak (anti)-localization. Journal of Applied Physics, American Institute of Physics, 2013, 113 (8), pp.083715. ⟨10.1063/1.4793591⟩. ⟨hal-00705711v2⟩
  • Alexandre Boulle, D. Dompoint, I. Galben-Sandulache, D. Chaussende. Polytypic transformations in SiC : diuse X-ray scattering and Monte Carlo simulations. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2013, 88 (2), ⟨10.1103/PhysRevB.88.024103⟩. ⟨hal-02193723⟩
  • Alexandre Boulle, Deborah Dompoint, I. Galben-Sandulache, D. Chaussende. Polytypic transformations in SiC: Diffuse x-ray scattering and Monte Carlo simulations. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2013, 88, pp.024103-1-024103-10. ⟨10.1103/PhysRevB.88.024103⟩. ⟨hal-00907667⟩
  • T. Ouisse, E. Sarigiannidou, O. Chaix-Pluchery, Hervé Roussel, B. Doisneau, et al.. High temperature solution growth and characterization of Cr2AlC single crystals. Journal of Crystal Growth, Elsevier, 2013, 384, pp.88-95. ⟨10.1016/j.jcrysgro.2013.09.021⟩. ⟨hal-01067401⟩
  • Martin Seiss, T. Ouisse, D. Chaussende. Comparison of the spiral growth modes of silicon-face and carbon-face silicon carbide crystals. Journal of Crystal Growth, Elsevier, 2013, 384, pp.129-134. ⟨10.1016/j.jcrysgro.2013.09.022⟩. ⟨hal-01067412⟩
  • C. Coletti, S. Forti, A. Principi, K. V. Emtsev, A. A. Zakharov, et al.. Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2013, 88 (15), pp.155439. ⟨10.1103/PhysRevB.88.155439⟩. ⟨hal-01067356⟩
  • A. Henry, Xiaojian Li, H. Jacobson, S. Andersson, Alexandre Boulle, et al.. 3C-SiC heteroepitaxy on hexagonal SiC substrates. Materials Science Forum, Trans Tech Publications Inc., 2013, Volumes 740 - 742 (Chapter 4: Epitaxial Growth 3C SiC), pp.267-270. ⟨10.4028/www.scientific.net/MSF.740-742.267⟩. ⟨hal-00945824⟩
  • D. Dompoint, Alexandre Boulle, I.G. Galben-Sandulache, D. Chaussende. Diffuse X-ray scattering from partially transformed 3C-SiC single crystals. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 284, pp.19-22. ⟨10.1016/j.nimb.2011.09.008⟩. ⟨hal-02193739⟩
  • T. Ouisse, D. Chaussende. Application of an axial next-nearest-neighbor Ising model to the description of Mn+1AXn phases. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2012, 85 (10), pp.104110. ⟨10.1103/PhysRevB.85.104110⟩. ⟨hal-01067399⟩
  • A. Debelle, M. Backman, L. Thome, W. J. Weber, M. Toulemonde, et al.. Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2012, 86, pp.100102. ⟨10.1103/PhysRevB.86.100102⟩. ⟨in2p3-00742518⟩
  • A. Debelle, M. Backman, L. Thome, W. Weber, M. Toulemonde, et al.. Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2012, 86 (10), ⟨10.1103/PhysRevB.86.100102⟩. ⟨hal-02193726⟩
  • Deborah Dompoint, Irina Galben-Sandulache, Alexandre Boulle, Didier Chaussende, Dominique Eyidi, et al.. On the stability of 3C-SiC single crystals at high temperatures. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.493-496. ⟨10.4028/www.scientific.net/MSF.717-720.493⟩. ⟨hal-02193762⟩
  • Deborah Dompoint, Alexandre Boulle, I.G. Galben-Sandulache, D. Chaussende. Diffuse X-ray scattering from partially transformed 3C-SiC single crystals. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 284, pp.19-22. ⟨10.1016/j.nimb.2011.09.008⟩. ⟨hal-00758429⟩
  • L. T. M. Hoa, T. Ouisse, D. Chaussende. Critical assessment of birefringence imaging of dislocations in 6H silicon carbide. Journal of Crystal Growth, Elsevier, 2012, 354 (1), pp.202-207. ⟨10.1016/j.jcrysgro.2012.06.009⟩. ⟨hal-01067372⟩
  • J.H Choi., L. Latu-Romain., F. Dhalluin., T. Chevolleau., B. Salem., et al.. Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma.. Materials Science Forum, Trans Tech Publications Inc., 2012, 711, pp. 66-69. ⟨hal-00762143⟩
  • J. Lefebure, J. M. Dedulle, T. Ouisse, D. Chaussende. Modeling of the Growth Rate during Top Seeded Solution Growth of SiC Using Pure Silicon as a Solvent. Crystal Growth & Design, American Chemical Society, 2012, 12 (2), pp.909-913. ⟨10.1021/cg201343w⟩. ⟨hal-01067388⟩
  • D. Dompoint, Alexandre Boulle, I. Galben-Sandulache, D. Chaussende, L. Hoa, et al.. Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: a diuse X-ray scattering study. Journal of Applied Physics, American Institute of Physics, 2011, 110 (5), pp.053508. ⟨10.1063/1.3627371⟩. ⟨hal-02193765⟩
  • K. Seki, A. Alexander, S. Kozawa, T. Ujihara, Patrick Chaudouet, et al.. Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system. Journal of Crystal Growth, Elsevier, 2011, 335 (1), pp.94-99. ⟨10.1016/j.jcrysgro.2011.09.004⟩. ⟨hal-01067466⟩
  • Florian Mercier, O. Chaix-Pluchery, T. Ouisse, D. Chaussende. Raman scattering from Ti3SiC2 single crystals. Applied Physics Letters, American Institute of Physics, 2011, 98 (8), pp.081912. ⟨10.1063/1.3558919⟩. ⟨hal-01067392⟩
  • A. Claudel, E. Blanquet, D. Chaussende, R. Boichot, Roland Martin, et al.. Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD. Journal of The Electrochemical Society, Electrochemical Society, 2011, 158 (3), pp.H328-H332. ⟨10.1149/1.3536477⟩. ⟨hal-00640123⟩
  • Florian Mercier, T. Ouisse, D. Chaussende. Morphological instabilities induced by foreign particles and Ehrlich-Schwoebel effect during the two-dimensional growth of crystalline Ti3SiC2. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2011, 83 (7), pp.075411. ⟨10.1103/PhysRevB.83.075411⟩. ⟨hal-01067393⟩
  • C. Coletti, K. V. Emtsev, A. A. Zakharov, T. Ouisse, D. Chaussende, et al.. Large area quasi-free standing monolayer graphene on 3C-SiC(111). Applied Physics Letters, American Institute of Physics, 2011, 99 (8), pp.081904. ⟨10.1063/1.3618674⟩. ⟨hal-01067355⟩
  • L. Latu-Romain, M. Ollivier, A. Mantoux, G. Auvert, O. Chaix-Pluchery, et al.. From Si nanowire to SiC nanotube. Journal of Nanoparticle Research, Springer Verlag, 2011, 13 (10), pp.5425-5433. ⟨10.1007/s11051-011-0530-9⟩. ⟨hal-00629242⟩
  • A. Claudel, Y. Chowanek, E. Blanquet, D. Chaussende, R. Boichot, et al.. Aluminum nitride homoepitaxial growth on polar and non-polar AlN PVT substrates by high temperature CVD (HTCVD).. physica status solidi (c), Wiley, 2011, 8 (7-8), pp.2019-2021. ⟨hal-00692267⟩
  • A. Claudel, E. Blanquet, D. Chaussende, R. Boichot, B. Doisneau, et al.. Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process.. Journal of Crystal Growth, Elsevier, 2011, 335 (1), pp.17-24. ⟨10.1016/j.jcrysgro.2011.09.018⟩. ⟨hal-00664176⟩
  • T. Ouisse, D. Chaussende, L. Auvray. Micropipe-induced birefringence in 6H silicon carbide. Journal of Applied Crystallography, International Union of Crystallography, 2010, 43, pp.122-133. ⟨10.1107/s0021889809043957⟩. ⟨hal-01067400⟩
  • Alexandre Boulle, D. Dompoint, I. Galben-Sandulache, D. Chaussende. Quantitative analysis of diffuse X-ray scattering in partially transformed 3C-SiC single crystals. Journal of Applied Crystallography, International Union of Crystallography, 2010, 43 (4), pp.867-875. ⟨10.1107/S0021889810019412⟩. ⟨hal-02193826⟩
  • Alexandre Boulle, Deborah Dompoint, I.G. Galben-Sandulache, D. Chaussende. Quantitative analysis of diffuse X-ray scattering in partially transformed 3C-SiC single crystals. Journal of Applied Crystallography, International Union of Crystallography, 2010, 43, pp.867--875. ⟨10.1107/S0021889810019412⟩. ⟨hal-00573322⟩
  • O. Kim-Hak, G. Ferro, J. Lorenzzi, D. Carole, J. Dazord, et al.. Evolution of 3C-SiC islands nucleated from a liquid phase on Si face alpha-SiC substrates. Thin Solid Films, Elsevier, 2010, 518 (15), pp.4234-4241. ⟨10.1016/j.tsf.2009.12.086⟩. ⟨hal-01067377⟩
  • Olivier Kim-Hak, Jean Lorenzzi, Nikoletta Jegenyes, Gabriel Ferro, Davy Carole, et al.. Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase. Materials Science Forum, Trans Tech Publications Inc., 2010, 645-648, pp.163-166. ⟨10.4028/www.scientific.net/MSF.645-648.163⟩. ⟨hal-02735381⟩
  • Florian Mercier, J. M. Dedulle, D. Chaussende, M. Pons. Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth. Journal of Crystal Growth, Elsevier, 2010, 312 (2), pp.155-163. ⟨hal-00466813⟩
  • A. Debelle, L. Thome, D Dompoint, Alexandre Boulle, F. Garrido, et al.. Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals. Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (45), pp.455408. ⟨10.1088/0022-3727/43/45/455408⟩. ⟨hal-02193735⟩
  • A. Debelle, L. Thome, Deborah Dompoint, Alexandre Boulle, F. Garrido, et al.. Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals. Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43, pp.455408-1-455408-7. ⟨10.1088/0022-3727/43/45/455408⟩. ⟨hal-00573276⟩
  • Alexandre Boulle, J. Aube, I.G. Galben-Sandulache, D. Chaussende. The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering. Applied Physics Letters, American Institute of Physics, 2009, 94, 201904 (3 p.). ⟨10.1063/1.3141509⟩. ⟨hal-00418779⟩
  • Alexandre Boulle, J. Aubé, I. Galben-Sandulache, D. Chaussende. The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering. Applied Physics Letters, American Institute of Physics, 2009, 94 (20), pp.201904. ⟨10.1063/1.3141509⟩. ⟨hal-02190246⟩
  • O. Kim-Hak, G. Ferro, J. Dazord, M. Marinova, J. Lorenzzi, et al.. Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrate. Journal of Crystal Growth, Elsevier, 2009, 311 (8), pp.2385-2390. ⟨10.1016/j.jcrysgro.2009.01.132⟩. ⟨hal-01067376⟩
  • M. Marinoya, Florian Mercier, A. Mantzari, I. Galben, D. Chaussende, et al.. A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates. Physica B: Condensed Matter, Elsevier, 2009, 404 (23-24), pp.4749-4751. ⟨10.1016/j.physb.2009.08.190⟩. ⟨hal-01067391⟩
  • M. Pons, S.I. Nishizawa, P. Wellmann, E. Blanquet, D. Chaussende, et al.. Silicon Carbide growth : C/Si ratio Evaluation and Modeling. Materials Science Forum, Trans Tech Publications Inc., 2009, 600-603, pp.83-88. ⟨hal-00389369⟩
  • A. Claudel, E. Blanquet, D. Chaussende, Roland Martin, D. Pique, et al.. High-speed growth and characterization of polycrystalline AlN layers by High temperature Chemical Vapor Deposition (HTCVD).. ECS Transactions, Electrochemical Society, Inc., 2009, 25 (8), pp.323-326. ⟨hal-00457445⟩
  • A. Claudel, E. Blanquet, D. Chaussende, M. Audier, D. Pique, et al.. Growth of thick AIN layers by high temperature CVD ('HTCVD). Materials Science Forum, Trans Tech Publications Inc., 2009, 600-603, pp.1269-1272. ⟨hal-00389378⟩
  • A. Claudel, E. Blanquet, D. Chaussende, M. Audier, D. Pique, et al.. Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD. Journal of Crystal Growth, Elsevier, 2009, 311 (13), pp.3371-3379. ⟨10.1016/j.jcrysgro.2009.03.053⟩. ⟨hal-00408487⟩
  • E. Blanquet, D. Chaussende, A. Claudel, D. Pique, M. Pons. Influence of total pressure and precursors flow rates on the growth of aluminum nitride by high temperature chemical vapor deposition (HTCVD). physica status solidi (c), Wiley, 2009, 6, pp.S348-S351. ⟨hal-00432756⟩
  • D. Chaussende, Florian Mercier, R. Madar, M. Pons. Comparative study of differently grown 3C-SiC single crystals with birefringence microscopy. Materials Science Forum, Trans Tech Publications Inc., 2009, 600-603, pp.71-74. ⟨hal-00374734⟩
  • Alexandre Boulle, D. Chaussende, Florine Conchon, G. Ferro, Olivier Masson. Characterization of stacking faults in thick 3C-SiC crystals using high-resolution diffuse X-ray scattering. Journal of Crystal Growth, Elsevier, 2008, 310, pp.982-987. ⟨10.1016/j.jcrysgro.2007.11.149⟩. ⟨hal-00291594⟩
  • Alexandre Boulle, D. Chaussende, F. Conchon, G. Ferro, O. Masson. Characterization of stacking faults in thick 3C-SiC crystals using high-resolution diffuse X-ray scattering. Journal of Crystal Growth, Elsevier, 2008, 310 (5), pp.982-987. ⟨10.1016/j.jcrysgro.2007.11.149⟩. ⟨hal-02193853⟩
  • Didier Chaussende, Frédéric Mercier, Alexandre Boulle, Florine Conchon, Maher Soueidan, et al.. Prospects for 3C-SiC bulk crystal growth. Journal of Crystal Growth, Elsevier, 2008, 310, pp.976-981. ⟨10.1016/j.jcrysgro.2007.11.140⟩. ⟨hal-00174181⟩
  • Alexandre Boulle, D. Chaussende, F. Pecqueux, Florine Conchon, L. Latu-Romain, et al.. Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scattering. physica status solidi (a), Wiley, 2007, 204 (8), pp.2528-2534. ⟨10.1002/pssa.200675652⟩. ⟨hal-00176514⟩
  • D. Chaussende, M. Pons, P. Wellmann. Status of SiC bulk growth process. Journal of Physics D: Applied Physics, IOP Publishing, 2007, 20, pp.6150-6158. ⟨hal-00114194⟩
  • Didier Chaussende, Elisabeth Blanquet, Francis Baillet, Magali Ucar, Guy Chichignoud. Thermodynamic aspects of the growth of SiC single crystals using the CF-PVT process. Chemical Vapor Deposition, Wiley-VCH Verlag, 2006, 12 (8-9), pp.541-548. ⟨10.1002/cvde.200606471⟩. ⟨hal-00118819⟩
  • Alexandre Boulle, D. Chaussende, L. Latu-Romain, Florine Conchon, Olivier Masson, et al.. X-ray diffused scattering from stacking faults in thick 3C-SiC single crystals. Applied Physics Letters, American Institute of Physics, 2006, 89, pp.091902-1-091902-3. ⟨10.1063/1.2338787⟩. ⟨hal-00095108⟩
  • L. Latu-Romain, D. Chaussende, C. Balloud, S. Juillaguet, L. Rapenne, et al.. Characterization of bulk <111> 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method. Silicon carbide and related materials, 2006, pp.527-529 / 99-102. ⟨hal-00394389⟩
  • Alexandre Boulle, D. Chaussende, L. Latu-Romain, Florine Conchon, Olivier Masson, et al.. X-ray diffuse scattering from stacking faults in thick 3C-SiC single crystals. Applied Physics Letters, American Institute of Physics, 2006, pp.89(9), (2006) 091902-1-091902-3. ⟨hal-00394392⟩
  • D. Chaussende, E. Blanquet, Francis Baillet, M. Ucar, G. Chichignoud. Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF-PVT Process. Chemical Vapor Deposition, Wiley-VCH Verlag, 2006, 12 (8-9), pp.541-548. ⟨hal-00141044⟩
  • G. Chichignoud, M. Pons, E. Blanquet, D. Chaussende, M. Anikin, et al.. High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding. Surface and Coatings Technology, Elsevier, 2006, 201 (7), pp.4014-4020. ⟨hal-00141052⟩
  • Alexandre Boulle, D. Chaussende, L. Latu-Romain, F. Conchon, O. Masson, et al.. X-ray diffuse scattering from stacking faults in thick 3C-SiC single crystals. Applied Physics Letters, American Institute of Physics, 2006, 89 (9), pp.091902. ⟨10.1063/1.2338787⟩. ⟨hal-02193856⟩
  • Maher Soueidan, Gabriel Ferro, B. Nsouli, Mohamad Roumie, Efsthatios Polychroniadis, et al.. Characterization of a 3C-SiC single domain grown on 6H-SiC(0001) by a vapor-liquid-solid mechanism. Crystal Growth & Design, American Chemical Society, 2006, 6 (11), pp.2598-2602. ⟨10.1021/cg0603523⟩. ⟨hal-00389882⟩
  • L. Latu-Romain, D. Chaussende, M. Pons. High temperature nucleation of cubic silicon carbide on (0001) hexagonal-SiC nominal surfaces. Crystal Growth & Design, American Chemical Society, 2006, pp.6, 12 (2006) 2788-2794. ⟨hal-00394391⟩
  • D. Chaussende, L. Latu-Romain, M. Pons. High temperature nucleation of cubic silicon carbide on (0001) hexagonal SiC nominal surfaces. Crystal Growth & Design, American Chemical Society, 2006, 6 (12), pp.2788-2794. ⟨hal-00141565⟩
  • Laurence Latu-Romain, Didier Chaussende, Michel Pons. High-Temperature Nucleation of Cubic Silicon Carbide on (0001) Hexagonal-SiC Nominal Surfaces. Crystal Growth & Design, American Chemical Society, 2006, 6 (12), pp.2788-2794. ⟨10.1021/cg060420l⟩. ⟨hal-00133832⟩
  • Laurence Latu-Romain, Didier Chaussende, Patrick Chaudouët, Florence Robaut, Gregory Berthomé, et al.. Study of 3C-SiC nucleation on (0 0 0 1) 6H-SiC nominal surfaces by the CF-PVT method. Journal of Crystal Growth, Elsevier, 2005, 275, pp.e609-e613. ⟨10.1016/j.jcrysgro.2004.11.005⟩. ⟨hal-00188007⟩
  • Didier Chaussende, Magali Ucar, Laurent Auvray, Francis Baillet, Michel Pons, et al.. Control of the Supersaturation in the CF-PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications. Crystal Growth & Design, American Chemical Society, 2005, 5 (4), pp.1539-1544. ⟨10.1021/cg050009i⟩. ⟨hal-00118809⟩
  • Didier Chaussende, Carole Balloud, Laurent Auvray, Francis Baillet, Marcin Zielinski, et al.. Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method. Materials Science Forum, Trans Tech Publications Inc., 2004, 457-460, pp. 91-94. ⟨10.4028/0-87849-943-1.91⟩. ⟨hal-00417942⟩
  • Michel Pons, Francis Baillet, Elisabeth Blanquet, Etienne Pernot, Roland Madar, et al.. Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization. Applied Surface Science, Elsevier, 2003, 212-213, pp.177-183. ⟨10.1016/S0169-4332(03)00064-3⟩. ⟨hal-00187935⟩
  • Etienne Pernot, I. El Harrouni, Michel Mermoux, Jean-Marie Bluet, Mikhail Anikin, et al.. Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman spectroscopy Imaging and Photoluminescence Spectroscopy Imaging. Materials Science Forum, Trans Tech Publications Inc., 2003, 433-436, pp. 265-268. ⟨10.4028/www.scientific.net/MSF.433-436.265⟩. ⟨hal-00418043⟩
  • Didier Chaussende, Francis Baillet, Ludovic Charpentier, Etienne Pernot, Michel Pons, et al.. Continuous Feed Physical Vapor Transport : Toward High Purity and Long Boule Growth of SiC. Journal of The Electrochemical Society, Electrochemical Society, 2003, 150 (10), pp.G653-G657. ⟨10.1149/1.1606689⟩. ⟨hal-00187159⟩
  • Christophe Jacquier, Gabriel Ferro, François Cauwet, Didier Chaussende, Yves Monteil. SiC Homoepitaxial Growth at Low Temperature by Vapor-Liquid-Solid Mechanism in Al-Si Melt. Crystal Growth & Design, American Chemical Society, 2003, 3 (3), pp.285-287. ⟨10.1021/cg0256069⟩. ⟨hal-00187892⟩
  • Patrice Vicente, Didier Chaussende. Single atomic steps on SiC polished surfaces. III-Vs Review, Elsevier, 2002, 15 (4), pp.46-47. ⟨hal-00187897⟩
  • Christophe Jacquier, Didier Chaussende, Gabriel Ferro, Jean-Claude Viala, François Cauwet, et al.. Study of the interaction between graphite and Al-Si melts for the growth of crystalline silicon carbide. Journal of Materials Science, Springer Verlag, 2002, 37, pp.3299-3306. ⟨hal-00187149⟩
  • Thierry Chassagne, Gabriel Ferro, Didier Chaussende, François Cauwet, Yves Monteil, et al.. A comprehensive study of SiC growth processes in a VPE reactor. Thin Solid Films, Elsevier, 2002, 402, pp.83-89. ⟨hal-00187126⟩
  • Didier Chaussende, Gabriel Ferro, Yves Monteil. Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE. Journal of Crystal Growth, Elsevier, 2002, 234, pp.63-69. ⟨hal-00187136⟩
  • Didier Chaussende, Gabriel Ferro, Yves Monteil, Christian Brylinski, Jean Bouix. Thermochemistry of silicon carbide growth by chemical transport reactions. Journal of Materials Science, Springer Verlag, 2001, 36, pp.335-342. ⟨hal-00186942⟩
  • Didier Chaussende, Yves Monteil, Patrick Aboughe-Nze, Christian Brylinski, Jean Bouix. Thermodynamical calculations on the chemical vapor transport of silicon carbide. Materials Science and Engineering: B, Elsevier, 1999, 61-62, pp.98-101. ⟨hal-00186935⟩
  • Gabriel Ferro, Nicolas Planes, Victoria Papaioannou, Didier Chaussende, Yves Monteil, et al.. Role of SIMOX defects on the structural properties of b-SiC:SIMOX. Materials Science and Engineering: B, Elsevier, 1999, 61-62, pp.586-592. ⟨hal-00186941⟩

Conference papers56 documents

  • Gabriel Ferro, Didier Chaussende. Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al. 18th International Conference on Silicon Carbide and Related Materials (ICSCRM 2019), Sep 2019, Kyoto, Japan. pp.96-101, ⟨10.4028/www.scientific.net/MSF.1004.96⟩. ⟨hal-02990885⟩
  • Hoang-Long Le Tran, Eirini Sarigiannidou, Odette Chaix-Pluchery, Isabelle Gélard, Thierry Ouisse, et al.. Sublimation growth of a new promising semiconductor Al4SiC4. E- MRS Spring, May 2017, Strasbourg, France. ⟨hal-02112233⟩
  • Ji-Young Yoon, Byeong Geun Kim, Ji-Eun Lee, Myung -Hyun Lee, Won- Seon Seo, et al.. Top seeded solution growth of 4H - SiC single crystal using graphite block with rough surface. International Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy. ⟨hal-02016964⟩
  • Laurent Pedesseau, Jacky Even, Olivier Durand, Mircea Modreanu, Didier Chaussende, et al.. Wide optical band gap Al4SiC4. European Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland. ⟨hal-01203372⟩
  • Laurent Pedesseau, Jacky Even, Olivier Durand, Mircea Modreanu, D. Chaussende, et al.. Optical properties of wide band gap Al4SiC4: experimental and theoretical approaches. European Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France. ⟨hal-01162159⟩
  • D. Chaussende, L. Parent-Bert, Y.J. Shin, T. Ouisse, T. Yoshikawa. Effect of aluminum during the high temperature solution growth of Si-face 4H-SiC. 16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Giardinin Naxos, Italy. ⟨hal-02016972⟩
  • Didier Chaussende, L. Parent-Bert, Yj Shin, Thierry Ouisse, T. Yoshikawa. Effect of aluminum during the high temperature solution growth of Si-face 4H-SiC. 16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Giardini Naxos, Italy. ⟨hal-02016977⟩
  • Yun Ji Shin, Beatrice Doisneau, Kanaparin Ariyawong, Pierre Brosselard, Didier Chaussende. Experimental investigation of the seeding stage during SiC solution growth using Si and Si - Al solvents. International conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy. ⟨10.4028/www.scientific.net/MSF.858.81⟩. ⟨hal-02016968⟩
  • Nikolaos Tsavdaris, Pawel Kwasnicki, Kanaparin Ariyawong, Nathalie Valle, Herve Peyre, et al.. Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC. ECSCRM, Sep 2014, Grenoble, France. pp.60 - 63, ⟨10.4028/www.scientific.net/MSF.821-823.60⟩. ⟨hal-01936649⟩
  • Kassem Alassaad, Véronique Soulière, Beatrice Doisneau, François Cauwet, Hervé Peyre, et al.. Ge assisted SiC epitaxial growth by CVD on SiC substrate. 15th International Conference on Silicon Carbide and Related Materials, Sep 2013, Miyasaki, Japan. pp.187-192, ⟨10.4028/www.scientific.net/MSF.778-780.187⟩. ⟨hal-02025422⟩
  • Alexandre Boulle, Deborah Dompoint, I. Galben Sandulache, D. Chaussende. Diffuse X-Ray scattering and Monte Carlo studies of spatially correlated stacking faults in SiC. 2012 MRS Fall Meeting & Exhibit, Nov 2012, Boston, United States. ⟨hal-00952309⟩
  • Didier Chaussende, Thierry Ouisse. Growth of Ti3SiC2 single crystals. 36th International Conference and Expo on Advanced Ceramics and Composites, Jan 2012, Daytona Beach (Floride), United States. ⟨hal-00672082⟩
  • J.L. Demenet, A. Madyan, J. Rabier, C. Tromas, D. Eyidi, et al.. Etude structurale des dislocations dans les polytypes 4H et 3C de SiC. Journées Plénières du GnR Matinex 2011, Feb 2012, Lyon, France. ⟨hal-00952203⟩
  • A. Debelle, Alexandre Boulle, L. Thome, F. Garrido, M. Backman, et al.. Experimental study of defect recovery induced by swift heavy ions in 6H-SiC and 3C-SiC. MRS 2012 Spring Meeting, Apr 2012, San Francisco, United States. ⟨hal-00952235⟩
  • A. Henry, Xiaojian Li, H. Jacobson, S. Andersson, Alexandre Boulle, et al.. 3C-SiC heteroepitaxy on hexagonal SiC substrates. European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2012, Saint Petersburg, Russia. ⟨hal-00944202⟩
  • Didier Chaussende. SiC bulk growth processes: achievements and next challenges. 2nd Annual Meeting of the SiC Research Community in Korea, Nov 2011, Seoul, South Korea. ⟨hal-00672069⟩
  • Didier Chaussende. Initiation d'une " filière nitrures à grand gap " : croissance et caractérisation de cristaux massifs d'AlN pour les applications optoélectroniques. Journée Recherche de Grenoble INP, Feb 2011, Grenoble, France. ⟨hal-00672062⟩
  • Didier Chaussende. Recent advances on SiC bulk growth processes. Confidential, Nov 2011, Pohang, South Korea. ⟨hal-00672078⟩
  • M. Pons, D. Chaussende, J.M. Dedulle, R. Boichot, E. Blanquet. SiC and AlN growth processing : experiments and simulation.. International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India. ⟨hal-00692283⟩
  • E. Blanquet (invitée), A. Claudel, V. Brizé, R. Boichot, D. Chaussende, et al.. Vapor phase processes: From HTCVD processes for high rate epitaxial growth to ALD processes for conformal ultra thin film fabrication.. International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India. ⟨hal-00692280⟩
  • M. Pons, S. Nishizawa, E. Blanquet, R. Boichot, D. Chaussende. Numerical Simulation of SiC Growth processes: a characterization tool for the design of epitaxial structures in electronics. Renewable Energy 2010, Jun 2010, Yokohama, Japan. ⟨hal-00502036⟩
  • D. Chaussende. Vapor Phase vs. Liquid Phase: What is the Best Choice for the Growth of Bulk 3C-SiC Crystals?. European Materials Research Society (E-MRS) Spring meeting, Jun 2010, Strasbourg, France. ⟨hal-00672043⟩
  • Alexandre Boulle, D. Dompoint, I. Galben-Sandulache, D. Chaussende. Defects and Polytypism in SiC: The Role of Diffuse X-Ray Scattering. 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES:, Oct 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩. ⟨hal-02193824⟩
  • Alexandre Boulle, Deborah Dompoint, I. Galben-Sandulache, D. Chaussende. Defects and polytypism in SiC : the role of diffuse X-ray scattering. E-MRS Symposium F, Jun 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩. ⟨hal-00686902⟩
  • Deborah Dompoint, Alexandre Boulle, I.G. Galben-Sandulache, D. Chaussende. Study of the stability of 3C-SiC single crystals using high resolution diffuse X-ray scattering. E-MRS, Jun 2010, Strasbourg, France. pp.71-74, ⟨10.1063/1.3518314⟩. ⟨hal-00686913⟩
  • Didier Chaussende. SiC bulk growth technologies. Winter School on Growth and epitaxy, Jan 2010, Linköping, Sweden. ⟨hal-00671985⟩
  • D. Chaussende. Overview of SiC bulk growth processes. Confidential, Dec 2010, Amagasaki, Japan. ⟨hal-00672047⟩
  • D. Chaussende. Cristallogenèse des semi-conducteurs à grand gap : contexte et enjeux. Les Midis MINATEC, Jun 2009, Grenoble, France. ⟨hal-00671980⟩
  • Maya Marinova, Georgios Zoulis, Teddy Robert, Frederic Mercier, Alkioni Mantzari, et al.. Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC. 25th International Conference on Defects in Semiconductors, Jul 2009, St Petersburg (RUSSIA), France. pp.4727-4730. ⟨hal-00543681⟩
  • I.G. Galben-Sandulache, G.L. Sun, J.M. Dedulle, T. Ouisse, R. Madar, et al.. Study of the spontaneous nucleation of 3C-SiC single crystals using CF-PVT technique. 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.55-58, ⟨10.4028/www.scientific.net/MSF.645-648.55⟩. ⟨hal-00517395⟩
  • G.L. Sun, I.G. Galben-Sandulache, T. Ouisse, J.M. Dedulle, M. Pons, et al.. Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the seeded growth of 3C-SiC Crystals. 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.63-66, ⟨10.4028/www.scientific.net/MSF.645-648.63⟩. ⟨hal-00517405⟩
  • D. Chaussende, J. Eid, Florian Mercier, R. Madar, M. Pons. Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.31-36. ⟨hal-00389062⟩
  • J. Eid, I.-G. Galben, G. Zoulis, Teddy Robert, D. Chaussende, et al.. Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48. ⟨hal-00390466⟩
  • Thierry Ouisse, Didier Chaussende, Laurent Auvray, Etienne Pernot, Roland Madar. Dislocation-Induced Birefringence in Silicon Carbide. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.271-274, ⟨10.4028/www.scientific.net/MSF.615-617.271⟩. ⟨hal-02890909⟩
  • Alexandre Boulle, D. Chaussende, Florine Conchon, Florian Mercier, G. Ferro, et al.. Characterization of stacking faults in thick 3C-SiC crystals using high resolution diffuse X-ray scattering. E-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2008, Strasbourg, France. ⟨hal-00285929⟩
  • A. Claudel, D. Chaussende, E. Blanquet, D. Pique, M. Pons. Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD). 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.987-990. ⟨hal-00426590⟩
  • Florian Mercier, D. Chaussende, J.M. Dedulle, R. Madar, M. Pons. Top Seeded Solution Growth of 3C-SiC single crystals. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.41-44. ⟨hal-00426587⟩
  • D. Chaussende, Florian Mercier, Alexandre Boulle, Florine Conchon, M. Soueidan, et al.. Prospects for 3C-SiC bulk crystal growth. E-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2007, Starsbourg, France. ⟨hal-00285924⟩
  • Alexandre Boulle, D. Chaussende, Florine Conchon, G. Ferro, Olivier Masson. Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scattering. International Workshop on 3C-SiC Heteroepitaxy (HeteroSiC 07), Jun 2007, Grenoble, France. ⟨hal-00286549⟩
  • A. Claudel, E. Blanquet, D. Chaussende, M. Audier, D. Pique, et al.. Growth of thick AlN layers by High Temperature CVD. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Otsu, Japan. pp.1269-1272. ⟨hal-00337372⟩
  • Florian Mercier, D. Chaussende, R. Madar, M. Pons. Comparative study of differently grown 3C-SiC single crystals with birefringence microscopy. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.71-74. ⟨hal-00337375⟩
  • M. Pons, S. Nishizawa, P. Wellmann, E. Blanquet, D. Chaussende, et al.. Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.83-88. ⟨hal-00173481⟩
  • J.M. Dedulle, D. Chaussende, R. Madar, M. Pons, E. Blanquet, et al.. Croissance de semi-conducteurs à grand gap. CFM'07, 2007, France. pp.8. ⟨hal-00196661⟩
  • J.M. Dedulle, Florian Mercier, D. Chaussende, M. Pons. Modeling of 3C-SiC Single Crystal Growth. Conférence européenne COMSOL, 2007, France. pp.8. ⟨hal-00196662⟩
  • Florian Mercier, D. Chaussende, J.M. Dedulle, M. Pons. Preliminary study of 3C-SiC growth from high temperature solution. Hetero'SiC'07, 2007, France. pp.2. ⟨hal-00196665⟩
  • Didier Chaussende, Roland Madar, Michel Pons. Gas fed top-seeded solution growth of silicon carbide. 2006, pp.111-114. ⟨hal-00133834⟩
  • Didier Chaussende, Peter Wellmann, Magali Ucar, Michel Pons, Roland Madar. In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging. 2006, pp.63-66. ⟨hal-00140007⟩
  • E. Blanquet, D. Chaussende, S. Nishizawa, M. Pons. High Temperature Silicon Carbide Chemical Vapor deposition processes: from pure thermodynamic to Mass transport modeling. European conference on Computational Dynamics, Symposium, Sep 2006, Egmondaan Zee, Netherlands. pp.1-20. ⟨hal-00141097⟩
  • M. Pons, S. Nishizawa, P. Wellmann, E. Blanquet, J. M. Dedulle, et al.. SiC growth : evaluation and modeling. MRS Spring Meeting "B- Silicon Carbide – Materials, Processing and Devices", Apr 2006, San Francisco, United States. pp.64-77. ⟨hal-00141104⟩
  • J.M. Dedulle, D. Chaussende, M. Pons, R. Madar. Modèle de champ de phase pour la croissance cristalline. MATERIAUX 2006, 2006, France. pp.10. ⟨hal-00196658⟩
  • G. Chichignoud, M. Pons, E. Blanquet, D. Chaussende, M. Anikin, et al.. High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding. International Conference on Metallurgical cCoating and Thin Films, ICMCTF, 2006, San Diego, United States. ⟨hal-00149073⟩
  • L. Latu-Romain, D. Chaussende, L. Rapenne, M. Pons, R. Madar. Mechanism Of Orientation Selection For The Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals On Hexagonal Basis. European Conference on Silicon Carbide and Related Materials, 2006, Newcastle, United Kingdom. pp.199-202. ⟨hal-00149093⟩
  • L. Latu-Romain, D. Chaussende, Carole Balloud, Sandrine Juillaguet, L. Rapenne, et al.. Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method. International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh, United States. pp.99-102, ⟨10.4028/www.scientific.net/MSF.527-529.99⟩. ⟨hal-00541637⟩
  • M. Soueidan, G. Ferro, J. Stoemenos, E. K. Polychroniadis, D. Chaussende, et al.. Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism. International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.287-290. ⟨hal-00140124⟩
  • L. Latu-Romain, D. Chaussende, C. Balloud, J. Camassel, Etienne Pernot, et al.. In-situ observation by X-ray imaging of mass transfer in the CF-PVT growth process. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.99-102. ⟨hal-00173466⟩
  • M. Anikin, D. Chaussende, Etienne Pernot, Hervé Roussel, O. Chaix, et al.. Growth of AlN and AlN-SiC solid solution by sublimation method. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.1501-1504. ⟨hal-00173468⟩

Book sections2 documents

  • Didier Chaussende, Noboru Ohtani. Silicon carbide. Single Crystals of Electronic Materials, Elsevier, pp.129-179, 2019, ⟨10.1016/B978-0-08-102096-8.00005-7⟩. ⟨hal-02366922⟩
  • Gabriel Ferro, Didier Chaussende, Christophe Jacquier. VLS growth of SiC epilayers. M. Syväjârvi and R. Yakimova. Wide band gap materials and new developments, Research signpost, pp.91-116, 2006. ⟨hal-00140374⟩

Patents2 documents

  • R. Madar, M. Pons, Francis Baillet, L. Charpentier, D. Chaussende, et al.. FORMATION OF SINGLE-CRYSTAL SILICON CARBIDE. Patent n° : US2005257734. TOP. 2005. ⟨hal-00386316⟩
  • R. Madar, M. Pons, Francis Baillet, L. Charpentier, Etienne Pernot, et al.. FORMATION OF SINGLE-CRYSTAL SILICON CARBIDE. Patent n° : EP1511884. TOP. 2005. ⟨hal-00386315⟩