Denis Mencaraglia
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GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgalliumJournal of Applied Physics, 2017, 121 (3), pp.035704. ⟨10.1063/1.4974538⟩
Article dans une revue
hal-01444245v1
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High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seedScientific Reports, 2016, 6, pp.25328. ⟨10.1038/srep25328⟩
Article dans une revue
hal-01316731v1
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Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areasApplied Physics Letters, 2013, 102 (19), pp.191915 - 191915-4. ⟨10.1063/1.4807386⟩
Article dans une revue
hal-00931275v1
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Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cellsEuropean Materials Research Society, May 2017, Strasbourg, France
Poster de conférence
hal-01629676v1
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Multilayer photoreceptor device, layers of which have different lattice parametersÉtats-Unis, N° de brevet: US20190115488. 2019
Brevet
hal-04558166v1
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