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David Trémouilles

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Publications

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Study of GaN HEMTs Robustness to Application-Like, Software-Controlled Overshoots Emulating Different Gate Routings in Original 50 Ohms Environment

Ludovic Roche , David Trémouilles , Emmanuel Marcault , Corinne Alonso
Workshop on Wide Bandgap Power Devices & Applications (WiPDA) 2023, Dec 2023, Charlotte (North Carolina), United States. ⟨10.1109/WiPDA58524.2023.10382216⟩
Communication dans un congrès hal-04239100v1
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Méthode de préconditionnement du HEMT GaN pour une mesure reproductible de Vth

Lucien Ghizzo , David Trémouilles , Frédéric Richardeau
SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France. https://sge2023.sciencesconf.org/resource/page/id/35
Communication dans un congrès hal-04157673v1
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Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes

L. Ghizzo , G. Guibaud , C. de Nardi , F. Jamin , V. Chazal
49th International Symposium for Testing and Failure Analysis ISTFA 2023), Nov 2023, Phoenix, United States. pp.491-499, ⟨10.31399/asm.cp.istfa2023p0491⟩
Communication dans un congrès hal-04307540v1
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Dynamic RDS-on degradation analysis on power GaN HEMT by means of TCAD simulations and experimental measurement

Gaëtan Toulon , Cristina Miccoli , David Trémouilles , Frédéric Morancho , Maria-Eloisa Castagna
WOCSDICE - EXMATEC 2023 6th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, May 2023, Palerme, Italy
Communication dans un congrès hal-04128305v1
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Over-Voltage and Cross-Conduction Hard Switching Stress on Schottky Gate-Type p-GaN HEMT in Half-Bridge Operation Experimental and Physical Approaches [ESREF'23]

Lucien Ghizzo , David Trémouilles , Frédéric Richardeau , Sébastien Vinnac , François Jamin
34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115172⟩
Communication dans un congrès hal-04252379v1
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Transmission Line Approach for the PCB Gate Interconnection Design in GaN-Based High-Frequency Power Converters

Alonso Gutierrez Galeano , Emmanuel Marcault , Corinne Alonso , David Trémouilles
PCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2021, on line, France
Communication dans un congrès hal-03370453v1
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Experimental Comparison of Discrete Cascode GaN-GaN and Single e-GaN in High-Frequency Power Converter

A Gutierrez , E Marcault , Corinne Alonso , David Trémouilles
PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Jul 2020, Nuremberg (Virtual), Germany
Communication dans un congrès hal-02998007v1
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Performance Analysis of RL Damper in GaN-Based High-Frequency Boost Converter

A Gutierrez , E Marcault , Corinne Alonso , David Trémouilles
22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon (virtuel), France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215645⟩
Communication dans un congrès hal-02987332v1
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Développement technologique d'un HEMT normally-off avec une grille à barrière P-GaN

Chaymaa Haloui , Josiane Tasselli , Karine Isoird , David Trémouilles , Patrick Austin
Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France
Communication dans un congrès hal-02278808v1
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Variation de la résistance de contact métal/semi-conducteur dans une structure HEMT GaN sous illumination UV

Dany Hachem , David Trémouilles , Frédéric Morancho , Gaëtan Toulon
Symposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. 4p
Communication dans un congrès hal-02981923v2
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Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée

Audrey Chapelle , Éric Frayssinet , Yvon Cordier , Yohann Spiegel , Leïla Benmosfeta
Symposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5
Communication dans un congrès hal-02981903v2

Investigation on damaged planar-oxide of 1200V SiC Power Mosfets in non-destructive short-circuit operation

François Boige , Frédéric Richardeau , D. Trémouilles , S. Lefebvre , G. Guibaud
28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sept. 25-28, 2017, Bordeaux (FRANCE), 2017, Bordeaux, France
Communication dans un congrès hal-03937651v1
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Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading

Emmanuel Marcault , David Trémouilles , Karine Isoird , Frédéric Morancho , Mathieu Gavelle
18th European Conference on Power Electronics and Applications (EPE'2016), Sep 2016, Karlsruhe, Germany. ⟨10.1109/EPE.2016.7695492⟩
Communication dans un congrès hal-01556254v1
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Mesure de résistance dynamique de HEMT en GaN à l'échelle de la centaine de nanosecondes

Emmanuel Marcault , David Trémouilles , Karine Isoird , Gaëtan Toulon , Frédéric Morancho
Symposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès hal-01361669v1
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Robustesse de MESFET SiC face aux décharges électrostatiques

Tanguy Phulpin , David Trémouilles , Karine Isoird , Patrick Austin , M Vellvehi
SGE Symposium de Génie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès hal-01310299v1
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Fiabilité de MESFET SiC face aux décharges électrostatiques

Tanguy Phulpin , Karine Isoird , David Trémouilles , Patrick Austin , Javier Leon
Symposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès hal-01361658v1
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Analyse du mécanisme d'un défaut ESD sur un MESFET en SiC

Tanguy Phulpin , David Trémouilles , Karine Isoird , Dominique Tournier , Philippe Godignon
Journées Nationales du Réseau de Doctorants en Microélectronique, Jun 2015, Bordeaux, France
Communication dans un congrès hal-01339803v1
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An Electrostatic-Discharge-Protection Solution for Silicon-Carbide MESFET

Tanguy Phulpin , David Trémouilles , Karine Isoird , Dominique Tournier , Philippe Godignon
EOS/ESD Symposium, Sep 2015, Reno, United States
Communication dans un congrès hal-01178266v1
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Tackling the challenges of System level ESD: from efficient ICs ESD protection to system level predictive modeling

Marise Bafleur , Fabrice Caignet , Nicolas Nolhier , David Trémouilles
Taiwan ESD and Reliability Conference, Nov 2013, Hsinchu, Taiwan
Communication dans un congrès hal-00957728v1
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Transient-TLP (T-TLP): a simple method for accurate ESD protection transient behavior measurement

David Trémouilles , Antoine Delmas , Nicolas Mauran , Nicolas Nolhier , Houssam Arbess
EOS/ESD Symposium, Sep 2013, LAS VEGAS, United States. pp.258-267
Communication dans un congrès hal-01056511v1

Life Cycle Assessment on a 765 kV Venezuelan Transmission System

Wenlu Wang , David Trémouilles , Abderrahmane Beroual , Jean-Luc Bessède
iREED, Mar 2011, Lille, France. pp.CD
Communication dans un congrès hal-00765489v1
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Behavioral-Modeling Methodology to Predict Electrostatic-Discharge Susceptibility Failures at System Level : an IBIS Improvement

Nicolas Monnereau , Fabrice Caignet , Nicolas Nolhier , David Trémouilles , Marise Bafleur
Int. Symposium on Electromagnetic Compatibility (EMC Europe 2011), Sep 2011, YORK, United Kingdom. pp.457-463
Communication dans un congrès hal-00722643v1
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High-temperature operation MOS-IGBT power clamp for improved ESD protection in smart power technology

Houssam Arbess , David Trémouilles , Marise Bafleur
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD 2011), Sep 2011, ANAHEIM, United States. pp.1B.2-1B.8
Communication dans un congrès hal-00722642v1
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Advanced ESD power clamp design for SOI FinFET CMOS technology

Steven Thijs , David Trémouilles , Dimitri Linten , Natarajan Mahadeva Iyer , Alessio Griffoni
International Conference on IC Design and Technology (ICICDT 2010), Jun 2010, Grenoble, France. pp.43-46, ⟨10.1109/ICICDT.2010.5510299⟩
Communication dans un congrès hal-00677458v1
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Accurate Transient Behavior Measurement of High- Voltage ESD Protections Based on a Very Fast Transmission-Line Pulse System

Antoine Delmas , Nicolas Nolhier , David Trémouilles , Marise Bafleur , Nicolas Mauran
31st Electrical Overstress/Electrostatic Discharge Symposium, 2009. EOS/ESD Symposium, Aug 2009, ANAHEIM, United States. pp.165-172
Communication dans un congrès hal-00445676v1
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Pushing away the silicon limits of ESD protection structures: exploration of crystallographic orientation

David Trémouilles , Yuan Gao , Marise Bafleur
BIPOLAR/BiCMOS Circuits and Technology Meeting (BCTM), Oct 2008, Monterey, United States. pp.200-203
Communication dans un congrès hal-00383353v1

Different failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure

Nicolas Guitard , Fabien Essely , David Trémouilles , Marise Bafleur , Nicolas Nolhier
European Symposium on Reliability of Electron Devices, Failure Physics and analysis (ESREF), 2005, arcachon, France. pp.1415-1420
Communication dans un congrès hal-00401483v1
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ESD Induced Latent Defects In CMOS ICs And Reliability Impact

Nicolas Guitard , David Trémouilles , Stéphane Alves , Marise Bafleur , Félix Beaudoin
Electrical Overstress and Electrostatic Discharge (EOS/ESD) Symposium, Sep 2004, Dallas, United States. pp.174-181
Communication dans un congrès hal-00385694v1
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Design Guidelines to Achieve a Very High ESD Robustness in a Self-Biased NPN

David Trémouilles , Géraldine Bertrand , Marise Bafleur , Nicolas Nolhier , Lionel Lescouzères
Electrical Overstress and Electrostatic Discharge Symposium, Oct 2002, Charlotte, United States. pp.281-288
Communication dans un congrès hal-00383352v1
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Preconditioning of Ohmic p-GaN power HEMT for reproducible Vth measurements

L. Ghizzo , David Trémouilles , Frédéric Richardeau , G. Guibaud
Solid-State Electronics, 2024, 214, pp.108868. ⟨10.1016/j.sse.2024.108868⟩
Article dans une revue hal-04446838v1
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Preconditioning of p-GaN power HEMT for reproducible V measurements

L. Ghizzo , David Trémouilles , Frédéric Richardeau , S. Vinnac , Lucas Moreau
Microelectronics Reliability, 2023, 144, pp.114955. ⟨10.1016/j.microrel.2023.114955⟩
Article dans une revue hal-04049626v1
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First results on 1.2 kV SiC MOSFET body diode robustness tests

Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , David Trémouilles
Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩
Article dans une revue hal-04282544v1
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Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches

L. Ghizzo , David Trémouilles , Frédéric Richardeau , S. Vinnac , F. Jamin
Microelectronics Reliability, 2023, 150, pp.115172. ⟨10.1016/j.microrel.2023.115172⟩
Article dans une revue hal-04242294v1
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Physical origin of the gate current surge during short-circuit operation of SiC MOSFET

François Boige , David Trémouilles , Frédéric Richardeau
IEEE Electron Device Letters, 2019, 40 (5), pp.666-669. ⟨10.1109/led.2019.2896939⟩
Article dans une revue hal-02020275v1
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Contribution to Silicon-Carbide-MESFET ESD robustness analysis

Tanguy Phulpin , Karine Isoird , David Trémouilles , Patrick Austin , X. Perpinya
IEEE Transactions on Device and Materials Reliability, 2018, 18 (2), pp.214-223. ⟨10.1109/TDMR.2018.2817255⟩
Article dans une revue hal-01740513v1
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Characteristics of zirconium and niobium contacts on boron-doped diamond

M. Davydova , A. Taylor , P. Hubík , L. Fekete , L. Klimša
Diamond and Related Materials, 2018, 83, pp.184-189. ⟨10.1016/j.diamond.2018.02.009⟩
Article dans une revue hal-01956850v1
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Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond

Vincent Mortet , A. Taylor , M. Davydova , L. Fekete , Z. Vlčková Živcová
MRS Advances, 2018, 3 (33), pp.1931-1935. ⟨10.1557/adv.2018.39⟩
Article dans une revue hal-01956851v1
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Analysis of heavily boron-doped diamond Raman spectrum

V. Mortet , A. Taylor , Z. Vlčková Živcová , D. Machon , O. Frank
Diamond and Related Materials, 2018, 88, pp.163-166. ⟨10.1016/j.diamond.2018.07.013⟩
Article dans une revue hal-01956849v1
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A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance

Dany Hachem , David Trémouilles , Frédéric Morancho , Gaëtan Toulon
Microelectronics Reliability, 2018, 88-90, pp.406-410. ⟨10.1016/j.microrel.2018.07.119⟩
Article dans une revue hal-01893190v1
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New triggering-speed-characterization method for diode-triggered SCR using TLP

Mouna Mahane , David Trémouilles , Marise Bafleur , Benjamin Thon , Marianne Diatta
Microelectronics Reliability, 2017, 76-77, pp.692 - 697. ⟨10.1016/j.microrel.2017.07.063⟩
Article dans une revue hal-01643028v1
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Insight into boron-doped diamond Raman spectra characteristic features

Vincent Mortet , Z. Vlčková Živcová , A. Taylor , O. Frank , P. Hubík
Carbon, 2017, 115, pp.279 - 284. ⟨10.1016/j.carbon.2017.01.022⟩
Article dans une revue hal-01643027v1
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Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

François Boige , Frédéric Richardeau , David Trémouilles , Stéphane Lefebvre , G. Guibaud
Microelectronics Reliability, 2017, 76-77, pp.500 - 506. ⟨10.1016/j.microrel.2017.06.085⟩
Article dans une revue hal-01643030v1
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Peculiarities of high electric field conduction in p-type diamond

V. Mortet , David Trémouilles , J. Bulíř , P. Hubík , L. Heller
Applied Physics Letters, 2016, 108 (15), pp.152106. ⟨10.1063/1.4946853⟩
Article dans une revue hal-01411427v1
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Failure Analysis of ESD-stressed SiC MESFET

Tanguy Phulpin , David Trémouilles , Karine Isoird , Dominique Tournier , Philippe Godignon
Microelectronics Reliability, 2015, 55 (9-10), pp.1542-1548. ⟨10.1016/j.microrel.2015.06.121⟩
Article dans une revue hal-01176674v1
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Optimization of a MOS–IGBT–SCR ESD protection component in smart power SOI technology

Houssam Arbess , Marise Bafleur , David Trémouilles , Moustafa Zerarka
Microelectronics Reliability, 2015, 55 (9-10), pp.1476-1480. ⟨10.1016/j.microrel.2015.06.138⟩
Article dans une revue hal-01238569v1
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Analysis of an ESD failure mechanism on a SiC MESFET

Tanguy Phulpin , David Trémouilles , Karine Isoird , Dominique Tournier , Philippe Godignon
Microelectronics Reliability, 2014, pp.MR11331. ⟨10.1016/j.microrel.2014.07.134⟩
Article dans une revue hal-01059962v1
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Combined MOS-IGBT-SCR structure for a compact high-robustness ESD power clamp in smart power SOI technology

Houssam Arbess , Marise Bafleur , David Trémouilles , Moustafa Zerarka
IEEE Transactions on Device and Materials Reliability, 2013, 14 (1), pp. 432-440. ⟨10.1109/TDMR.2013.2281726⟩
Article dans une revue hal-00941891v1
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A System-Level Electrostatic-Discharge-Protection Modeling Methodology for Time-Domain Analysis

Nicolas Monnereau , Fabrice Caignet , David Trémouilles , Nicolas Nolhier , Marise Bafleur
IEEE Transactions on Electromagnetic Compatibility, 2013, 55 (1), pp.45-57. ⟨10.1109/TEMC.2012.2208973⟩
Article dans une revue hal-00941876v1
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An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices

Jinyu Jason Ruan , Nicolas Monnereau , David Trémouilles , Nicolas Mauran , Fabio Coccetti
IEEE Transactions on Instrumentation and Measurement, 2012, pp.456-461. ⟨10.1109/TIM.2011.2161937⟩
Article dans une revue hal-00668827v1
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Understanding the Failure Mechanisms of Protection Diodes During System Level ESD: Toward Repetitive Stresses Robustness

Marianne Diatta , David Trémouilles , Emilien Bouyssou , Raphaël Perdreau , Christine Anceau
IEEE Transactions on Electron Devices, 2012, 59 (1), pp.108 - 113. ⟨10.1109/TED.2011.2173576⟩
Article dans une revue hal-00668818v1
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Investigation on statistical tools to analyze repetitive-electrostatic-discharge endurance of system-level protections

Marianne Diatta , David Trémouilles , Emilien Bouyssou , Marise Bafleur
IEEE Transactions on Device and Materials Reliability, 2012, 12 (4), pp.607--614. ⟨10.1109/TDMR.2012.2230093⟩
Article dans une revue hal-00787197v1
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Investigation of Modeling System ESD Failure and Probability Using IBIS ESD Models

Nicolas Monnereau , Fabrice Caignet , Nicolas Nolhier , Marise Bafleur , David Trémouilles
IEEE Transactions on Device and Materials Reliability, 2012, 12 (4), pp.599-606. ⟨10.1109/TDMR.2012.2218605⟩
Article dans une revue hal-00941823v1
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Size effects on varistor properties made from zinc oxide nanoparticles by low temperature spark plasma sintering

Lena Saint Macary , Myrtil L. Kahn , Claude Estournès , Pierre Fau , David Trémouilles
Advanced Functional Materials, 2009, 19 (11), p.1775-1783
Article dans une revue hal-00383348v2
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Failure Mechanisms of Discrete Protection Device subjected to Repetitive ElectroStatic Discharges

Marianne Diatta , Emilien Bouyssou , David Trémouilles , P. Martinez , F. Roqueta
Microelectronics Reliability, 2009, 49 (9-11), pp.1103-1106. ⟨10.1016/j.microrel.2009.06.010⟩
Article dans une revue hal-00941812v1

Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure

Nicolas Guitard , Fabien Essely , David Trémouilles , Marise Bafleur , Nicolas Nolhier
Microelectronics Reliability, 2005, 45 (9), pp.1415-1420
Article dans une revue hal-00397706v1

Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization

T. Beauchêne , D. Lewis , F. Beaudoin , V. Pouget , R. Desplats
Microelectronics Reliability, 2003, 43 (3), pp.439 - 444. ⟨10.1016/S0026-2714(02)00339-6⟩
Article dans une revue hal-01887647v1
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Analysis and Compact Modeling of a Vertical Grounded-Base NPN Bipolar Transistor used as ESD Protection in a Smart Power Technology

Géraldine Bertrand , Christelle Delage , Marise Bafleur , Nicolas Nolhier , Jean-Marie Dorkel
IEEE Journal of Solid-State Circuits, 2001, 36 (9), pp.1373-1381
Article dans une revue hal-00143927v1
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Protection ESD pour MESFET SiC

Tanguy Phulpin , Karine Isoird , David Trémouilles , Patrick Austin
Journées Intégration et Systèmes de Puissance 3D (ISP3D), Mar 2015, Tours, France. 2015
Poster de conférence hal-01339804v1