Nombre de documents

53

CV de Daniela Munteanu


Article dans une revue42 documents

  • Jean-Luc Autran, Daniela Munteanu, S. Moindjie, T. Saad Saoud, G. Gasiot, et al.. Real-time soft error rate measurements on bulk 40nm SRAM memories: a five-year dual-site experiment. Semiconductor Science and Technology, IOP Publishing, 2016, 31 (11), <10.1088/0268-1242/31/11/114003>. <hal-01430070>
  • Daniela Munteanu, Jean-Luc Autran. 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs. Microelectronics Reliability, Elsevier, 2015, 55 (9-10), pp.1522-1526. <10.1016/j.microrel.2015.07.022>. <hal-01430073>
  • Jean-Luc Autran, Daniela Munteanu, S. Moindjie, T. Saad Saoud, S. Sauze, et al.. ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure. Microelectronics Reliability, Elsevier, 2015, 55 (9-10), pp.1506-1511. <10.1016/j.microrel.2015.06.101>. <hal-01430074>
  • Jean-Luc Autran, Daniela Munteanu. Radiation and COTS at ground level. Microelectronics Reliability, Elsevier, 2015, 55 (9-10), pp.2147-2153. <10.1016/j.microrel.2015.06.030>. <hal-01430071>
  • Jean-Luc Autran, Daniela Munteanu, P. Roche, G. Gasiot. Real-time soft-error rate measurements: A review. Microelectronics Reliability, Elsevier, 2014, 54 (8), pp.1455-1476. <10.1016/j.microrel.2014.02.031>. <hal-01430077>
  • Daniela Munteanu, Jean-Luc Autran. Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation. Microelectronics Reliability, Elsevier, 2014, 54 (9-10, SI), pp.2284-2288. <10.1016/j.microrel.2014.07.079>. <hal-01430078>
  • Jean-Luc Autran, M. Glorieux, Daniela Munteanu, S. Clerc, G. Gasiot, et al.. Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits. Microelectronics Reliability, Elsevier, 2014, 54 (9-10, SI), pp.2278-2283. <10.1016/j.microrel.2014.07.088>. <hal-01430080>
  • S. Martinie, T. Saad-Saoud, S. Moindjie, Daniela Munteanu, Jean-Luc Autran. Behavioral modeling of SRIM tables for numerical simulation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2014, 322, pp.2-6. <10.1016/j.nimb.2013.12.023>. <hal-01430076>
  • M. Glorieux, Jean-Luc Autran, Daniela Munteanu, S. Clerc, G. Gasiot, et al.. Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (6, 1), pp.3527-3534. <10.1109/TNS.2014.2362073>. <hal-01430079>
  • P. Roche, G. Gasiot, Jean-Luc Autran, Daniela Munteanu, R. A. Reed, et al.. Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (3, 2), pp.1498-1500. <10.1109/TNS.2014.2318778>. <hal-01430075>
  • Tarek Saad Saoud, Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Frédéric Wrobel, et al.. Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (6), pp.3380-3388. <http://ieeexplore.ieee.org/Xplore/home.jsp>. <10.1109/TNS.2014.2365038>. <lirmm-01234464>
  • J. Dura, F. Triozon, S. Barraud, Daniela Munteanu, S. Martinie, et al.. Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering-Comparison with experiment. Journal of Applied Physics, American Institute of Physics, 2012, 111 (10), <10.1063/1.4719081>. <hal-01430085>
  • Daniela Munteanu, Jean-Luc Autran. 3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs Under Heavy-Ion Irradiation. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (4, 1), pp.773-780. <10.1109/TNS.2012.2184139>. <hal-01430092>
  • S. Serre, S. Semikh, S. Uznanski, Jean-Luc Autran, Daniela Munteanu, et al.. Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (4, 1), pp.714-722. <10.1109/TNS.2012.2189018>. <hal-01430091>
  • Daniela Munteanu, Jean-Luc Autran. Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (6, 2), pp.3249-3257. <10.1109/TNS.2012.2221740>. <hal-01430090>
  • Jean-Luc Autran, S. Serre, S. Semikh, Daniela Munteanu, G. Gasiot, et al.. Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (6, 1), pp.2658-2665. <10.1109/TNS.2012.2222438>. <hal-01430089>
  • Sébastien Martinie, Jean-Luc Autran, Sebastien Sauze, Daniela Munteanu, Slawosz Uznanski, et al.. Underground Experiment and Modeling of Alpha Emitters Induced Soft-Error Rate in CMOS 65 nm SRAM. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (4, 1), pp.1048-1053. <10.1109/TNS.2012.2189246>. <hal-01430088>
  • S. Semikh, S. Serre, Jean-Luc Autran, Daniela Munteanu, S. Sauze, et al.. The Plateau de Bure Neutron Monitor: Design, Operation and Monte Carlo Simulation. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (2), pp.303-313. <10.1109/TNS.2011.2179945>. <hal-01430083>
  • Daniela Munteanu, Jean-Luc Autran. Modeling of energy bands in ultra-thin layer quantum nanostructures for solar cell applications. Journal of Non-Crystalline Solids, Elsevier, 2011, 357 (8-9, SI), pp.1884-1887. <10.1016/j.jnoncrysol.2010.11.112>. <hal-01430095>
  • Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran. Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials. Microelectronic Engineering, Elsevier, 2011, 88 (4), pp.366-369. <10.1016/j.mee.2010.08.026>. <hal-01430097>
  • Daniela Munteanu, Mathieu Moreau, Jean-Luc Autran. Effects of localized gate stack parasitic charge on current-voltage characteristics of double-gate MOSFETs with high-permittivity dielectrics and Ge-channel. Journal of Non-Crystalline Solids, Elsevier, 2011, 357 (8-9, SI), pp.1879-1883. <10.1016/j.jnoncrysol.2010.12.046>. <hal-01430098>
  • Daniela Di Martino, Daniela Munteanu, Alberto Paleari, Anna Vedda. SiO2, Advanced Dielectrics and Related Devices Varenna, Italy Preface. Journal of Non-Crystalline Solids, Elsevier, 2011, 357 (8-9, SI), pp.1835. <10.1016/j.jnoncrysol.2011.02.001>. <hal-01430101>
  • Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau. Quantum Compact Model of Drain Current in Independent Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2011, 50 (2), <10.1143/JJAP.50.024301>. <hal-01430093>
  • Sébastien Martinie, Daniela Munteanu, Gilles Le Carval, Julien Dura, Marie-Anne Jaud, et al.. Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal-Oxide-Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2011, 50 (1, 1), <10.1143/JJAP.50.014103>. <hal-01430094>
  • Sébastien Martinie, Jean-Luc Autran, Daniela Munteanu, Frédéric Wrobel, Michael Gedion, et al.. Analytical Modeling of Alpha-Particle Emission Rate at Wafer-Level. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (6, 1), pp.2798-2803. <10.1109/TNS.2011.2170851>. <hal-01430100>
  • S. Martinie, Jean-Luc Autran, S. Uznanski, P. Roche, G. Gasiot, et al.. Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (3, 2), pp.1086-1092. <10.1109/TNS.2010.2102363>. <hal-01430099>
  • Jean-Luc Autran, Daniela Munteanu, P. Roche, G. Gasiot, S. Martinie, et al.. Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level. Microelectronics Reliability, Elsevier, 2010, 50 (9-11, SI), pp.1822-1831. <10.1016/j.microrel.2010.07.033>. <hal-01430102>
  • Sebastien Martinie, Daniela Munteanu, Gilles Le Carval, Jean-Luc Autran. Analytical modelling and performance analysis of Double-Gate MOSFET-based circuit including ballistic/quasi-ballistic effects. Molecular Simulation, Taylor & Francis, 2009, 35 (08), pp.631-637. <10.1080/08927020902769836>. <hal-00515076>
  • Daniela Munteanu, Mathieu Moreau, Jean-Luc Autran. A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs. Molecular Simulation, Taylor & Francis, 2009, 35 (06), pp.491-497. <10.1080/08927020902801548>. <hal-00515080>
  • Daniela Munteanu, Jean Luc Autran, Xavier Loussier, Samuel Harrison, Robin Cerutti. Compact Modeling of Symmetrical Double-Gate MOSFETs Including Carrier Confinement and Short-Channel Effects. Molecular Simulation, Taylor & Francis, 2009, 33 (07), pp.605-611. <10.1080/08927020600930524>. <hal-00526208>
  • X. Loussier, Daniela Munteanu, Jean-Luc Autran. Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics. Journal of Non-Crystalline Solids, Elsevier, 2009, 355 (18-21), pp.1185-1188. <10.1016/j.jnoncrysol.2009.02.011>. <hal-01430115>
  • Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau, M. Houssa. Electron transport through high-kappa dielectric barriers: A non-equilibrium Green's function (NEGF) study. Journal of Non-Crystalline Solids, Elsevier, 2009, 355 (18-21), pp.1180-1184. <10.1016/j.jnoncrysol.2009.03.006>. <hal-01430113>
  • Mathieu Moreau, Daniela Munteanu, J-L Autran, F. Bellenger, J. Mitard, et al.. Investigation of capacitance-voltage characteristics in Ge/high-kappa MOS devices. Journal of Non-Crystalline Solids, Elsevier, 2009, 355 (18-21), pp.1171-1175. <10.1016/j.jnoncrysol.2009.01.056>. <hal-01430114>
  • Vincent Barral, Thierry Poiroux, Sylvain Barraud, François Andrieu, Olivier Faynot, et al.. Evidences on the Physical Origin of the Unexpected Transport Degradation in Ultimate n-FDSOI Devices. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2009, 8 (2), pp.167-173. <10.1109/TNANO.2008.2010128>. <hal-01430103>
  • Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran. Simulation of Gate Tunneling Current in Metal-Insulator-Metal Capacitor with Multi layer High-kappa Dielectric Stack Using the Non-equilibrium Green's Function Formalism. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2009, 48 (11), <10.1143/JJAP.48.111409>. <hal-01430110>
  • Vincent Barral, Thierry Poiroux, Daniela Munteanu, Jean-Luc Autran, Simon Deleonibus. Experimental Investigation on the Quasi-Ballistic Transport: Part II-Backscattering Coefficient Extraction and Link With the Mobility. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2009, 56 (3), pp.420-430. <10.1109/TED.2008.2011682>. <hal-01430104>
  • Sébastien Martinie, Daniela Munteanu, Gilles Le Carval, Jean-Luc Autran. Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2009, 56 (11, SI), pp.2692-2702. <10.1109/TED.2009.2030540>. <hal-01430108>
  • Daniela Munteanu, Jean-Luc Autran. Transient Response of 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation: a 3-D Simulation Study. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2009, 56 (4, 2), pp.2042-2049. <10.1109/TNS.2009.2016564>. <hal-01430109>
  • Daniela Munteanu, Jean-Luc Autran. 3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2009, 56 (4, 2), pp.2083-2090. <10.1109/TNS.2009.2016343>. <hal-01430111>
  • Jean-Luc Autran, P. Roche, S. Sauze, G. Gasiot, Daniela Munteanu, et al.. Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2009, 56 (4, 2), pp.2258-2266. <10.1109/TNS.2009.2012426>. <hal-01430112>
  • Vincent Barral, Thierry Poiroux, Jérôme Saint-Martin, Daniela Munteanu, Jean-Luc Autran, et al.. Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2009, 56 (3), pp.408-419. <10.1109/TED.2008.2011681>. <hal-01430106>
  • Jean-Luc Autran, Karim Nehari, Daniela Munteanu. Compact Modeling of the Threshold Voltage in Silicon Nanowire MOSFET including 2D-Quantum Confinement Effects. Molecular Simulation, Taylor & Francis, 2005, 31 (12), pp.839-843. <10.1080/08927020500314027>. <hal-00514965>

Direction d'ouvrage, Proceedings1 document

  • Sébastien Martinie, Sylvain Vedraine, Daniela Munteanu, Gilles Le Carval, V. Barral, et al.. Numerical simulation of quasi-ballistic transport in fully-depleted SOI and double-gate MOSFETs: application to the analysis of circuit performances. Sep 2008, Edinburg, United Kingdom. 2008, Proceedings of the 38th European Solid State Device Research Conference (ESSDERC’2008). <hal-01245391>

Communication dans un congrès8 documents

  • Tarek Saad Saoud, Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Frédéric Wrobel, et al.. Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude Vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation. NSREC: Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France. IEEE Nuclear & Space Radiation Effects Conference (NSREC 2014), 2014, <http://ieee-npss.org/wp-content/uploads/2014/03/2014-NSREC.pdf>. <lirmm-01237717>
  • G. Just, Jean-Luc Autran, S. Serre, Daniela Munteanu, S. Sauze, et al.. Soft Errors Induced by Natural Radiation at Ground Level in Floating Gate Flash Memories. 2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013, Unknown, Unknown or Invalid Region. 2013, International Reliability Physics Symposium. <10.1109/IRPS.2013.6531992>. <hal-01430082>
  • Philippe Roche, Jean-Luc Autran, Gilles Gasiot, Daniela Munteanu. Technology Downscaling Worsening Radiation Effects in Bulk: SOI to the Rescue. 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013, Unknown, Unknown or Invalid Region. 2013, <10.1109/IEDM.2013.6724728>. <hal-01430081>
  • Jean-Luc Autran, S. Serre, Daniela Munteanu, S. Martinie, S. Semikh, et al.. Real-Time Soft-Error Testing of 40nm SRAMs. 2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012, Unknown, Unknown or Invalid Region. 2012, <10.1109/IRPS.2012.6241814>. <hal-01430086>
  • J. Dura, F. Triozon, Daniela Munteanu, S. Barraud, S. Martinie, et al.. Electronic transport in GAA silicon nanowire MOSFETs: from Kubo-Greenwood mobility including screening remote coulomb scattering to analytical backscattering coefficient. 2012 15TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2012, Unknown, Unknown or Invalid Region. 2012. <hal-01430084>
  • Jean-Luc Autran, Daniela Munteanu, S. Serre, S. Sauze. A Review of Real-Time Soft-Error Rate Measurements in Electronic Circuits. 2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012, Unknown, Unknown or Invalid Region. 2012, <10.1109/IRPS.2012.6241843>. <hal-01430087>
  • Jean-Luc Autran, P. Roche, S. Sauze, G. Gasiot, Daniela Munteanu, et al.. Combined Altitude and Underground Real-Time SER Characterization of CMOS Technologies on the ASTEP-LSM Platform. 2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2009, Unknown, Unknown or Invalid Region. pp.113-120, 2009, <10.1109/ICICDT.2009.5166277>. <hal-01430105>
  • S. Martinie, E. Sarrazin, Daniela Munteanu, S. Barraud, G. Le Carval, et al.. Compact Modeling of Quasi-Ballistic Transport and Quantum Mechanical Confinement in Nanowire MOSFETs: Circuit Performances Analysis. 2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2009, Unknown, Unknown or Invalid Region. pp.139-142, 2009, International Conference on Simulation of Semiconductor Processes and Devices. <10.1109/SISPAD.2009.5290229>. <hal-01430107>

Chapitre d'ouvrage2 documents