Impact of technological parameters on non-stationary transport in realistic 50 nm MOSFET technology
Daniela Munteanu
,
G Le Carval
,
G Guegan
Article dans une revue
istex
hal-01759531v1
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A simulation analysis of FIBL in decananometer double-gate MOSFETs with high-Κ dielectrics
Daniela Munteanu
Journal of Non-Crystalline Solids , 2005, Vol.351, pp.1897
Article dans une revue
hal-00145186v1
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SEU Sensitivity of Junctionless SOI MOSFETs-based 6T SRAM Cells Investigated by 3D TCAD Simulation
Daniela Munteanu
,
Jean-Luc Autran
ESREF Conference , Oct 2015, Toulouse, France
Communication dans un congrès
hal-02100273v1
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The Plateau de Bure Neutron Monitor: Design, Operation and Monte Carlo Simulation
S. Semikh
,
S. Serre
,
Jean-Luc Autran
,
Daniela Munteanu
,
S. Sauze
,
et al.
Article dans une revue
hal-01430083v1
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Modeling of energy bands in ultra-thin layer quantum nanostructures for solar cell applications
Daniela Munteanu
,
Jean-Luc Autran
Article dans une revue
istex
hal-01430095v1
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3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates
Daniela Munteanu
,
Jean-Luc Autran
Article dans une revue
hal-01430111v1
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A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs
Daniela Munteanu
,
Mathieu Moreau
,
Jean-Luc Autran
Article dans une revue
hal-00515080v1
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Interactions between Terrestrial Cosmic-Ray Neutrons and III-V Compound Semiconductors
Daniela Munteanu
,
Jean-Luc Autran
Chapitre d'ouvrage
hal-02998364v1
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Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak during D-D Plasma Operation
Jean-Luc Autran
,
Soilihi Moindjie
,
Daniela Munteanu
,
Martin Dentan
,
Philippe Moreau
,
et al.
Article dans une revue
hal-03575419v1
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Multi-scale, multi-physics modeling and simulation of single-event effects at device and circuit levels
Jean-Luc Autran
,
Daniela Munteanu
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2022) , Jul 2022, Provo, United States
Communication dans un congrès
hal-03796081v1
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Modeling and Simulation of SEU in Bulk Si and Ge SRAM
Soilihi Moindjie
,
Daniela Munteanu
,
Jean-Luc Autran
30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019) , Sep 2019, Toulouse, France
Communication dans un congrès
hal-02263530v1
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Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices
Mathieu Moreau
,
Daniela Munteanu
,
Jean-Luc Autran
,
Florence Bellenger
,
Jérome Mitard
,
et al.
Article dans une revue
hal-01745840v1
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Electrical characterization and modelling of high-performance SON DG MOSFETs
S Harrison
,
Daniela Munteanu
,
Jean-Luc Autran
,
A Cros
,
R Cerutti
,
et al.
ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE , 2004, Unknown, Unknown Region. pp.373-376,
⟨10.1109/ESSDER.2004.1356567⟩
Communication dans un congrès
hal-01759468v1
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An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors
Jean-Luc Autran
,
Daniela Munteanu
,
O Tintori
,
E Decarre
,
Am Ionescu
Article dans une revue
hal-01759451v1
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Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation
Daniela Munteanu
,
Jean-Luc Autran
J. Awrejcewicz.
Computational and Numerical Simulations , INTECH, 2014,
⟨10.5772/57048⟩
Chapitre d'ouvrage
hal-02119405v1
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Nouveaux matériaux et architectures innovantes au-delà du transistor MOS sur silicium massif
Jean-Luc Autran
,
Daniela Munteanu
J.L. Leray, J.C. Boudenot, J. Gautier.
La Micro-Nanoélectronique. Enjeux et Mutations ,
CNRS Editions , pp.129, 2009, 978-2-271-06829-3
Chapitre d'ouvrage
hal-02121322v1
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Electrical characterization, modeling and simulation of high-κ based MOS devices
Jean-Luc Autran
,
Daniela Munteanu
,
Michel Houssa
M. Houssa. Fundamental and Technological Aspects of High-κ Gate Dielectrics , IOP Publishing, pp.251-289, 2004
Chapitre d'ouvrage
hal-02121367v1
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A water tank muon spectrometer for the characterization of low energy atmospheric muons
Daniela Munteanu
,
Soilihi Moindjie
,
Jean-Luc Autran
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 2019, 933, pp.12-17.
⟨10.1016/j.nima.2019.03.061⟩
Article dans une revue
hal-02087354v1
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A simple compact model to analyze the impact of ballistic and quasi-ballistic transport on ring oscillator performances
Sebastien Martinie
,
Daniela Munteanu
,
Gilles Le Carval
,
Jean-Luc Autran
A. Amara, T. Ea, M. Belleville.
Emerging technologies and Circuits ,
Springer , pp.37-51, 2010, 978-90-481-9378-3
Chapitre d'ouvrage
hal-02121249v1
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Compact modeling of Independent Double-Gate MOSFET: a physical approach
Daniela Munteanu
,
Jean-Luc Autran
A. Amara and O. Rozeau.
Planar Double-Gate transistor: from technology to circuit ,
Springer , pp.27-54, 2009, 978-1-4020-9327-2
Chapitre d'ouvrage
hal-02121344v1
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Compact Modeling of Symmetrical Double-Gate MOSFETs Including Carrier Confinement and Short-Channel Effects
Daniela Munteanu
,
Jean-Luc Autran
,
Xavier Loussier
,
Samuel Harrison
,
Robin Cerutti
Article dans une revue
hal-00526208v1
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Soft Errors Induced by Natural Radiation at Ground Level in Floating Gate Flash Memories
G. Just
,
Jean-Luc Autran
,
S. Serre
,
Daniela Munteanu
,
S. Sauze
,
et al.
Communication dans un congrès
hal-01430082v1
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Highly Performant Double Gate MOSFET realized with SON process
S Harrison
,
P Coronel
,
F Leverd
,
R Cerutti
,
R Palla
,
et al.
2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST , 2003, Unknown, Unknown Region. pp.449-452
Communication dans un congrès
hal-01759525v1
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Radiation and COTS at ground level
Jean-Luc Autran
,
Daniela Munteanu
Article dans une revue
hal-01430071v1
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Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials
Mathieu Moreau
,
Daniela Munteanu
,
Jean-Luc Autran
Article dans une revue
istex
hal-01430097v1
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Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors
Jean-Luc Autran
,
Daniela Munteanu
European Workshop on Radiation and its Effects on Components and Systems (RADECS 2019) , Sep 2019, Biarritz, France
Communication dans un congrès
hal-02263545v1
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Basic single-event mechanisms in Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons
Daniela Munteanu
,
Soilihi Moindjie
,
Jean-Luc Autran
Article dans une revue
hal-03358432v1
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Natural radiation events in CCD imagers at ground level
T Saad Saoud
,
S Moindjie
,
Daniela Munteanu
,
Jean-Luc Autran
Article dans une revue
hal-01427855v1
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Understanding evolving risks of single event effects
Daniela Munteanu
,
Jean-Luc Autran
14th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2013) , Sep 2013, Oxford, United Kingdom
Communication dans un congrès
hal-04372514v1
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Altitude and Underground Real-Time SER Testing of SRAMs Manufactured in CMOS Bulk 130, 65 and 40 nm
Jean-Luc Autran
,
Daniela Munteanu
,
Sébastien Sauze
,
Gilles Gasiot
,
Philippe Roche
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2014) , Jul 2014, Paris, France
Communication dans un congrès
hal-04373085v1
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