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A New Unified Compact Model for Quasi-Ballistic Transport: Application to the Analysis of Circuit Performances of a Double-Gate Architecture

 S. Martinie , Daniela Munteanu , G. Le Carval , Jean-Luc Autran
SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2008, Unknown, Unknown Region. pp.377+, ⟨10.1109/SISPAD.2008.4648316⟩
Communication dans un congrès hal-01759430v1

Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate, Double-Gate transistors

 Vincent Barral , T. Poiroux , M. Vinet , J. Widiez , B. Previtali , et al.
Solid-State Electronics, 2007, 51 (4), pp.537-542. ⟨10.1016/j.sse.2007.02.016⟩
Article dans une revue istex hal-01759440v1
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Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs

 Soilihi Moindje , Daniela Munteanu , Jean-Luc Autran , Victor Malherbe , Gilles Gasiot , et al.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023), Oct 2023, Toulouse, France
Communication dans un congrès hal-04177735v1
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Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

 Daniela Munteanu , Jean-Luc Autran
10th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2007), Sep 2007, Deauville, France
Communication dans un congrès hal-04388670v1

Modeling of energy bands in quantum dot superlattices for solar cell applications

 Daniela Munteanu , Jean-Luc Autran
8th Symposium SiO2, Advanced Dielectrics and Related Devices (2010), Jun 2010, Varenna, Italy
Communication dans un congrès hal-04393615v1

Particle Monte Carlo Modeling of Single-Event Transient Current and Charge Collection in Integrated Circuits

 Jean-Luc Autran , Maximilien Glorieux , Daniela Munteanu , Sylvain Clerc , Gilles Gasiot , et al.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2014), Sep 2014, Berlin, Germany
Communication dans un congrès hal-04373126v1
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SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation

 Daniela Munteanu , Jean-Luc Autran
Microelectronics Reliability, 2015, 55, pp.1501 - 1505. ⟨10.1016/j.microrel.2015.06.107⟩
Article dans une revue hal-01429427v1

Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxides

 Daniela Munteanu , Jean-Luc Autran , E Decarre , R Dinescu
Journal of Non-Crystalline Solids, 2003, 322 (1-3), pp.206-212. ⟨10.1016/S0022-3093(03)00203-5⟩
Article dans une revue istex hal-01759475v1

A 2-D/3-D Schrödinger-Poisson Drift-Diffusion Numerical Simulation of Radially-Symmetric Nanowire MOSFETs

 Daniela Munteanu , Jean-Luc Autran
X. Peng. Nanowires - Recent Advances, INTECH, pp.341-370, 2012, 978-953-51-0898-6. ⟨10.5772/52587⟩
Chapitre d'ouvrage hal-02120891v1

3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation

 Daniela Munteanu , Jean-Luc Autran
L. Angermann. Numerical Simulations, Applications, Examples and Theory, INTECH, pp.67-88, 2011, 978-953-307-440-5. ⟨10.5772/13231⟩
Chapitre d'ouvrage hal-02121229v1
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Terrestrial Neutron-Induced Single Events in GaN

 Daniela Munteanu , Jean-Luc Autran
Microelectronics Reliability, 2019, 100-101, pp.113357. ⟨10.1016/j.microrel.2019.06.049⟩
Article dans une revue hal-02263526v1
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Multi-scale, Multi-physics Modeling and Simulation of Single Event Effects in Digital Electronics: from Particles to Systems

 Jean-Luc Autran , Daniela Munteanu
IEEE Transactions on Nuclear Science, 2024, 71 (1), pp.31-66. ⟨10.1109/TNS.2023.3337288⟩
Article dans une revue hal-04333942v1

Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits

 M. Glorieux , Jean-Luc Autran , Daniela Munteanu , S. Clerc , G. Gasiot , et al.
IEEE Transactions on Nuclear Science, 2014, 61 (6, 1), pp.3527-3534. ⟨10.1109/TNS.2014.2362073⟩
Article dans une revue hal-01430079v1

Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits

 Jean-Luc Autran , M. Glorieux , Daniela Munteanu , S. Clerc , G. Gasiot , et al.
Microelectronics Reliability, 2014, 54 (9-10, SI), pp.2278-2283. ⟨10.1016/j.microrel.2014.07.088⟩
Article dans une revue hal-01430080v1

Altitude SEE test European platform (ASTEP) and first results in CMOS 130 nm SRAM

 Jean-Luc Autran , Philippe Roche , Joseph Borel , Christophe Sudre , Karine Castellani-Coulie , et al.
IEEE Transactions on Nuclear Science, 2007, 54 (4, 2), pp.1002-1009. ⟨10.1109/TNS.2007.891398⟩
Article dans une revue hal-01759445v1

Quantum short-channel compact modelling of drain-current in double-gate MOSFET

 Daniela Munteanu , Jean-Luc Autran , Xavier Loussier , Samuel Harrison , Robin Cerutti , et al.
Solid-State Electronics, 2006, 50 (4), pp.680-686. ⟨10.1016/j.sse.2006.03.038⟩
Article dans une revue istex hal-01759446v1

Performance degradation induced by fringing field-induced barrier lowering and parasitic charge in double-gate metal-oxide-semiconductor field-effect transistors with high-kappa dielectrics

 Jean-Luc Autran , Daniela Munteanu , M Houssa , K Castellani-Coulie , A Said
Japanese Journal of Applied Physics, 2005, 44 (12), pp.8362-8366. ⟨10.1143/JJAP.44.8362⟩
Article dans une revue hal-01759458v1

Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET

 Daniela Munteanu , Jean-Luc Autran , S Harrison , K Nehari , O Tintori , et al.
Molecular Simulation, 2005, 31 (12), pp.831-837. ⟨10.1080/08927020500313995⟩
Article dans une revue hal-01759460v1

3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

 M Bescond , K Nehari , Jean-Luc Autran , N Cavassilas , Daniela Munteanu , et al.
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, Unknown, Unknown Region. pp.617-620, ⟨10.1109/IEDM.2004.1419237⟩
Communication dans un congrès hal-01759466v1

Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation

 Sébastien Martinie , Daniela Munteanu , Gilles Le Carval , Jean-Luc Autran
IEEE Transactions on Electron Devices, 2009, 56 (11, SI), pp.2692-2702. ⟨10.1109/TED.2009.2030540⟩
Article dans une revue hal-01430108v1

The Plateau de Bure Neutron Monitor: Design, Operation and Monte Carlo Simulation

 S. Semikh , S. Serre , Jean-Luc Autran , Daniela Munteanu , S. Sauze , et al.
IEEE Transactions on Nuclear Science, 2012, 59 (2), pp.303-313. ⟨10.1109/TNS.2011.2179945⟩
Article dans une revue hal-01430083v1

Modeling of energy bands in ultra-thin layer quantum nanostructures for solar cell applications

 Daniela Munteanu , Jean-Luc Autran
Journal of Non-Crystalline Solids, 2011, 357 (8-9, SI), pp.1884-1887. ⟨10.1016/j.jnoncrysol.2010.11.112⟩
Article dans une revue istex hal-01430095v1

3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates

 Daniela Munteanu , Jean-Luc Autran
IEEE Transactions on Nuclear Science, 2009, 56 (4, 2), pp.2083-2090. ⟨10.1109/TNS.2009.2016343⟩
Article dans une revue hal-01430111v1
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A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs

 Daniela Munteanu , Mathieu Moreau , Jean-Luc Autran
Molecular Simulation, 2009, 35 (06), pp.491-497. ⟨10.1080/08927020902801548⟩
Article dans une revue hal-00515080v1
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Interactions between Terrestrial Cosmic-Ray Neutrons and III-V Compound Semiconductors

 Daniela Munteanu , Jean-Luc Autran
Modeling and Simulation in Engineering, 2020, 978-953-51-0012-6. ⟨10.5772/intechopen.92774⟩
Chapitre d'ouvrage hal-02998364v1
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Multi-scale, multi-physics modeling and simulation of single-event effects at device and circuit levels

 Jean-Luc Autran , Daniela Munteanu
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2022), Jul 2022, Provo, United States
Communication dans un congrès hal-03796081v1
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Modeling and Simulation of SEU in Bulk Si and Ge SRAM

 Soilihi Moindjie , Daniela Munteanu , Jean-Luc Autran
30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), Sep 2019, Toulouse, France
Communication dans un congrès hal-02263530v1
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Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices

 Mathieu Moreau , Daniela Munteanu , Jean-Luc Autran , Florence Bellenger , Jérome Mitard , et al.
MRS Online Proceedings Library, 2009, 1194, pp.1194-A02-02. ⟨10.1557/PROC-1194-A02-02⟩
Article dans une revue hal-01745840v1

Electrical characterization and modelling of high-performance SON DG MOSFETs

 S Harrison , Daniela Munteanu , Jean-Luc Autran , A Cros , R Cerutti , et al.
ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, Unknown, Unknown Region. pp.373-376, ⟨10.1109/ESSDER.2004.1356567⟩
Communication dans un congrès hal-01759468v1

An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors

 Jean-Luc Autran , Daniela Munteanu , O Tintori , E Decarre , Am Ionescu
Molecular Simulation, 2005, 31 (2-3), pp.179-183. ⟨10.1080/0892702051233132⟩
Article dans une revue hal-01759451v1
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