Recherche - Archive ouverte HAL Accéder directement au contenu

Filtrer vos résultats

35 résultats
Page :
triés par

Defects study in IR SWIR HgCdTe photodetectors using DLTS

 A. Brunner , L. Rubaldo , J. Berthoz , D. Bauza , G. Reimbold
2014 11th International Workshop on Low Temperature Electronics (WOLTE), Jul 2014, Grenoble, France. pp.9-11, ⟨10.1109/WOLTE.2014.6881013⟩
Communication dans un congrès hal-02017248v1

A General and Reliable Model for Charge Pumping -- Part I: Model and Basic Charge-Pumping Mechanisms

 D. Bauza
IEEE Transactions on Electron Devices, 2009, 56 (1), pp.70-77
Article dans une revue hal-00596082v1

DLTS study of extended defects in HgCdTe photodiodes

 P. Guinedor , T. Broult , A. Brunner , L. Rubaldo , D. Bauza , et al.
19th International Conference on Extended Defects in Semiconductors (EDS), eds2016.sciencesconf.org, Jun 2018, Thessaloniki, Greece
Communication dans un congrès hal-02016057v1

Comparison between Equilibrium Voltage Step and Charge Pumping Techniques for Characterizing near Si-SiO2 Interface Traps

 N. Guenifi , D. Bauza
ECS Transactions, 2014, 61 (2), pp.195-202. ⟨10.1149/06102.0195ecst⟩
Article dans une revue hal-02015157v1

(Invited) On the Modeling of the Charge Pumping Curves

 D. Bauza
ECS Transactions, 2016, 72 (2), pp.207-222. ⟨10.1149/07202.0207ecst⟩
Article dans une revue hal-02015172v1

Study of Metal Contamination in CMOS Image Sensors by Dark Current and Deep Level Transient Spectroscopies

 F. Domengie , J.L. Regolini , D. Bauza
13th International Conference on Defects, Jun 2009, United States
Communication dans un congrès hal-00603675v1

A rigorous analysis of the parameters which govern the SILC in n-channel MOSFET's with oxide thickness in the 1-2 nm range

 D. Bauza
in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5). in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5), 2008
Ouvrages hal-00391851v1

Proceedings of the Dielectrics for Nanosystems 6: Materials Science, Processing, Reliablity and Manufacturing Symposium

 D Misra , D. Bauza , Z. Chen , Y. Obeng , T. Chikyow , et al.
225th ECS Meeting, May 2014, Orlando, United States. ECS Transactions, 61 (2), 2014, ECS Transactions, 978-1-62332-161-1, 978-1-60768-517-3
N°spécial de revue/special issue hal-02060579v1

Proceedings of the Dielectrics for Nanosystems 8: Materials Science, Processing, Reliablity and Manufacturing

 D Misra , Z. Chen , D.-K. Ko , Y. Obeng , D. Bauza , et al.
237th ECS Meeting, ECS Transactions, 97 (1), 2020, ECS Transactions, 978-1-60768-889-1
N°spécial de revue/special issue hal-03015942v1

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature and oxide charge

 A. Negara , K. Cherkaoui , Hurley Hurley , C.D Young , P. Majhi , et al.
Journ. Appl. Phys., 2009, 105 (2), pp.024510:1-8
Article dans une revue hal-00596109v1

A new step in the electrical characterisation of Silicon-Insulator interfaces

 O. Ghobar D. Bauza
Conference on Optoelectronics and Microelectronic Materials and Devices, 2006, pp.XX
Communication dans un congrès hal-00146600v1

Advanced analysis of silicon interface traps in MOSFET's with SiO2 and HfO2 as gate dielectrics

 D. Bauza , O. Ghobar , N. Guenifi , S. Bayon
ECS Spring Meeting, May 2009, San Francisco, United States. pp.19-54
Communication dans un congrès hal-00603697v1

Modeling the dark current histogram induced by gold contamination in complementary-metal-oxide-semiconductor image sensors

 F. Domengie , P. Morin , D. Bauza
Journal of Applied Physics, 2015, 118 (2), pp.024501. ⟨10.1063/1.4922969⟩
Article dans une revue hal-02014334v1
Image document

Study of Si(100)-SiO2 Interface Trap Time Constant Distributions in Large Area Conventional MOSFETs-Comparison with Submicron Devices

 D. Bauza , Naima Guenifi
ECS Transactions, 2020, 97 (1), pp.83-90. ⟨10.1149/09701.0083ecst⟩
Article dans une revue hal-03015901v1

Low frequency noises and DLTS studies in HgCdTe MWIR photodiodes

 P. Guinedor , A. Brunner , L. Rubaldo , D. Bauza , G. Reimbold , et al.
Journal of Electronic Materials, 2019, 48 (10), pp.6113-6117. ⟨10.1007/s11664-019-07213-7⟩
Article dans une revue hal-02372377v1

Characterizing slow state near Si-SiO 2 in MOS structure

 N. Guenifi , D. Bauza , R. Mahamdi
Phosphorus, Sulfur, and Silicon and the Related Elements, 2018, 193 (2), pp.88-91. ⟨10.1080/10426507.2017.1417303⟩
Article dans une revue hal-02015369v1

Improvement of RTS Noise in HgCdTe MWIR Detectors

 Alexandre Brunner , Laurent Rubaldo , V. Destefanis , F. Chabuel , A. Kerlain , et al.
Journal of Electronic Materials, 2014, 43 (8), pp.3060-3064. ⟨10.1007/s11664-014-3217-z⟩
Article dans une revue hal-02013558v1

The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs

 M. Negara , K. Cherkaoui , P. Majhi , C. Young , W. Tsai , et al.
Microelectronic Engineering, 2007, 84 (9-10), pp.1874-1877
Article dans une revue hal-00393091v1

On the Meaning of Charge Pumping Curve Edges

 D. Bauza
IRPS 2013, Apr 2013, Monterey, CA, United States. pp.2.1-2.4, ⟨10.1109/IRPS.2013.6532086⟩
Communication dans un congrès hal-01078333v1

Proceedings of the Dielectrics for Nanosystems 7: Materials Science, Processing, Reliablity and Manufacturing Symposium

 D Misra , D. Bauza , Z. Chen , K. Sundaram , Y. Obeng , et al.
229th ECS Meeting, May 2016, San Diego, United States. ECS Transactions, 72 (2), 2016, ECS Transactions, 978-1-62332-354-7
N°spécial de revue/special issue hal-02060571v1

Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies

 F. Domengie , Regolini J.L. , D. Bauza
Journal of Electronic Materials, 2010, 39 (6), pp.625-629
Article dans une revue hal-00596321v1

Analysis of Electron Mobility in HfO2/TiN MOSFETs: The influence of HfO2 thickness, Temperature and oxide charge

 M.A. Negara , K. Cherkaoui , C.D. Young , P. Majhi , W. Tsai , et al.
39th IEEE Semiconductor Interface Specialists Conference, San Diego, Dec 2008, USA, France
Communication dans un congrès hal-00391866v1

Further evidences that Pb0 centers dominates Si-SiO2 interface traps in fully processed MOSFET's

 O. Ghobar , N. Guénifi , D. Bauza
15th Workshop on Dielectrics in Microelectronics, Jun 2008, BERLIN, France
Communication dans un congrès hal-00391868v1
Image document

LARGE DIFFUSION OXYGEN SENSOR IN MICROELECTRONIC TECHNOLOGY

 M. Gogé , D. Bauza , G. Velasco
Journal de Physique Colloques, 1986, 47 (C1), pp.C1-795-C1-799. ⟨10.1051/jphyscol:19861121⟩
Article dans une revue jpa-00225518v1

Charge pumping and Si-SiO2 interface traps electrical characterisation

 D. Bauza
Reliability, and Manufacturing,, Apr 2009, Canada. pp.251-261
Communication dans un congrès hal-00604273v1

A General and Reliable Model for Charge Pumping -- Part II: Application to the Study of Traps in SiO2 or in High- Gate Stacks

 D. Bauza
IEEE Transactions on Electron Devices, 2009, 56 (1), pp.78-84
Article dans une revue hal-00596083v1

Defects study in IR photodetectors by DLTS

 L. Rubaldo , A. Brunner , N. Péré-Laperne , D. Bauza , Philippe Christol , et al.
II-VI workshop, 2013, Chicago, United States
Communication dans un congrès hal-01875555v1

DLTS study of extended defects in HgCdTe photodiodes

 P. Guinedor , T. Broult , A Brunner , L. Rubaldo , D. Bauza , et al.
Journal of Physics: Conference Series, 2019, 1190, pp.012012. ⟨10.1088/1742-6596/1190/1/012012⟩
Article dans une revue hal-02372403v1

Defects Study in Hg x Cd1−x Te Infrared Photodetectors by Deep Level Transient Spectroscopy

 Laurent Rubaldo , Alexandre Brunner , Jocelyn Berthoz , N. Péré-Laperne , A. Kerlain , et al.
Journal of Electronic Materials, 2014, 43 (8), pp.3065-3069. ⟨10.1007/s11664-014-3226-y⟩
Article dans une revue hal-02014609v1

Investigation of interface defects and bulk charges in metal gate HfO_2 MOSFETs

 M.A. Negara , K. Cherkauoi , G. Ghibaudo , D. Bauza , W. Tsaii , et al.
European Materials Research Science Spring Meeting, 2006, STRASBOURG, France. pp.XX
Communication dans un congrès hal-00147150v1
Page :