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Co-authors

Number of documents

46

Damien Deleruyelle


Journal articles20 documents

  • P.V. Guenery, E.A. León Pérez, K. Ayadi, N. Baboux, D. Deleruyelle, et al.. Indium oxide nanoparticles for Resistive RAM integration using a compatible industrial technology. Solid-State Electronics, Elsevier, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩. ⟨hal-03116248⟩
  • Charles Rebora, Ruomeng Huang, Gabriela P. Kissling, Marc Bocquet, C H (kees) Groot, et al.. Conductive-bridge memory cells based on a nano-porous electrodeposited GeSbTe alloy. Nanotechnology, Institute of Physics, 2018, ⟨10.1088/1361-6528/aae6db⟩. ⟨hal-01951256⟩
  • Jean-Michel Portal, Marc Bocquet, Santhosh Onkaraiah, Mathieu Moreau, Hassen Aziza, et al.. Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO$_2$ )/28 nm FDSOI CMOS Technology. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2017, 16, pp.677 - 686. ⟨10.1109/TNANO.2017.2703985⟩. ⟨hal-01745418⟩
  • Francesco Maria Puglisi, Damien Deleruyelle, Jean-Michel Portal, Paolo Pavan, Luca Larcher. A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology. physica status solidi (a), Wiley, 2016, 213 (2), pp.289-301. ⟨10.1002/pssa.201532828⟩. ⟨hal-01435201⟩
  • A. Prakash, D. Deleruyelle, J. Song, Marc Bocquet, H. Hwang. Resistance controllability and variability improvement in a TaO x -based resistive memory for multilevel storage application. Applied Physics Letters, American Institute of Physics, 2015, 106 (23), pp.233104. ⟨10.1063/1.4922446⟩. ⟨hal-01737306⟩
  • W. Zhao, M. Portal, W. Kang, Mathieu Moreau, Y. Zhang, et al.. Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells. Journal of Parallel and Distributed Computing, Elsevier, 2014, 74 (6), pp.2484 - 2496. ⟨10.1016/j.jpdc.2013.08.004⟩. ⟨hal-01744000⟩
  • Weisheng Zhao, Mathieu Moreau, Erya Deng, Yue Zhang, Jean-Michel Portal, et al.. Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories. IEEE Transactions on Circuits and Systems I: Regular Papers, IEEE, 2014, 61 (2), pp.443 - 454. ⟨10.1109/TCSI.2013.2278332⟩. ⟨hal-01743999⟩
  • Jean-Michel Portal, Marc Bocquet, Mathieu Moreau, Hassen Aziza, Damien Deleruyelle, et al.. An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies. Journal of Electronic Science and Technology, 2014, 12 (2), pp.173 - 181. ⟨10.3969/j.issn.1674-862X.2014.02.007⟩. ⟨hal-01745646⟩
  • Marc Bocquet, Damien Deleruyelle, Hassen Aziza, Christophe Muller, Jean-Michel Portal, et al.. Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61 (3), pp.674 - 681. ⟨10.1109/TED.2013.2296793⟩. ⟨hal-01737291⟩
  • Dao Le, Livie Liénafa, Trang N. T. Phan, Damien Deleruyelle, Renaud Bouchet, et al.. Photo-Cross-Linked Diblock Copolymer Micelles: Quantitative Study of Photochemical Efficiency, Micelles Morphologies and their Thermal Behavior. Macromolecules, American Chemical Society, 2014, 47 (7), pp.2420--2429. ⟨10.1021/ma5000656⟩. ⟨hal-01460517⟩
  • Marc Bocquet, Hassen Aziza, Weisheng Zhao, Yue Zhang, Santhosh Onkaraiah, et al.. Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM). Journal of Low Power Electronics and Applications, MDPI, 2014, 4 (1), pp.1-14. ⟨10.3390/jlpea4010001⟩. ⟨hal-01737320⟩
  • H. Hraziia, Adam Makosiej, Giorgio Palma, Jean-Michel Portal, Marc Bocquet, et al.. Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up. Solid-State Electronics, Elsevier, 2013, 90, pp.99-106. ⟨10.1016/j.sse.2013.02.045⟩. ⟨hal-01744003⟩
  • Jean-Michel Portal, Marc Bocquet, Damien Deleruyelle, Christophe Muller. Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down Applications. Journal of Low Power Electronics, American Scientific Publishers, 2012, 8 (1), pp.1 - 10. ⟨10.1166/jolpe.2012.1172⟩. ⟨hal-01745507⟩
  • D. Deleruyelle, Magali Putero, T. Ouled-Khachroum, Marc Bocquet, M.V. Coulet, et al.. Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate. Solid-State Electronics, Elsevier, 2012, ⟨10.1016/j.sse.2012.06.010⟩. ⟨emse-00767177⟩
  • Ch. Muller, D. Deleruyelle, R. Müller, M. Thomas, A. Demolliens, et al.. Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer. Solid-State Electronics, Elsevier, 2011, 56 (1), pp.168-174. ⟨10.1016/j.sse.2010.10.006⟩. ⟨hal-02266382⟩
  • Marc Bocquet, Damien Deleruyelle, Christophe Muller, Jean-Michel Portal. Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories. Applied Physics Letters, American Institute of Physics, 2011, 98 (26), ⟨10.1063/1.3605591⟩. ⟨hal-01779321⟩
  • J. Amouroux, V. Della Marca, E. Petit, D. Deleruyelle, Magali Putero, et al.. Growth and In-line Characterization of Silicon Nanodots Integrated in Discrete Charge Trapping Non-volatile Memories. MRS Proceedings, 2011, 1337, ⟨10.1557/opl.2011.975⟩. ⟨hal-01760606⟩
  • Magali Putero, Toufik Ouled-Khachroum, Marie-Vanessa Coulet, Damien Deleruyelle, Eric Ziegler, et al.. Evidence for correlated structural and electrical changes in a Ge2Sb2Te5 thin film from combined synchrotron X-ray techniques and sheet resistance measurements during in situ thermal annealing. Journal of Applied Crystallography, International Union of Crystallography, 2011, 44, pp.858-864. ⟨10.1107/S0021889811024095⟩. ⟨hal-01951268⟩
  • A. Demolliens, Ch. Muller, R. Müller, C. Turquat, L. Goux, et al.. Solution growth of metal-organic complex CuTCNQ in small dimension interconnect structures. Journal of Crystal Growth, Elsevier, 2010, 312 (22), pp.3267-3275. ⟨10.1016/j.jcrysgro.2010.08.008⟩. ⟨hal-02271976⟩
  • A. Demolliens, R. Müller, L. Goux, D. Deleruyelle, D. Wouters, et al.. Study of Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 Thin Films Deposited by Sol-Gel Method. Ferroelectrics, Taylor & Francis: STM, Behavioural Science and Public Health Titles, 2010, 397 (1), pp.112-121. ⟨10.1080/00150193.2010.484748⟩. ⟨hal-02271962⟩

Conference papers25 documents

  • Bertrand Vilquin, Greta Segantini, Benoit Manchon, Ingrid Cañero Infante, Pedro Rojo Romeo, et al.. Effect of bottom electrodes on HZO thin film properties. International Symposium on Applications of Ferroelectrics (ISAF) 2021, https://isaf-isif-pfm2021.org/, May 2021, Sydney, Australia. ⟨hal-03274229⟩
  • Greta Segantini, Benoit Manchon, Pedro Rojo Romeo, Rabei Barhoumi, Nicolas Baboux, et al.. Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions. EMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland. ⟨hal-03368741⟩
  • Greta Segantini, Pedro Rojo Romeo, Benoit Manchon, Rabei Barhoumi, Damien Deleruyelle, et al.. Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications. Journées de la matière condensée (JMC17), Société française de physique (SFP), Aug 2021, Rennes, France. ⟨hal-03372588⟩
  • Benoit Manchon, Greta Segantini, Pedro Rojo Romeo, Nicolas Baboux, Rabei Barhoumi, et al.. Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application. EMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland. ⟨hal-03354311⟩
  • J. Minguet Lopez, D. Alfaro Robayo, L. Grenouillet, C. Carabasse, G. Navarro, et al.. Optimization of RRAM and OTS selector for advanced low voltage CMOS compatibility. 2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108126⟩. ⟨hal-03029496⟩
  • G. Molas, D. Alfaro Robayo, J. Minguet Lopez, L. Grenouillet, C. Carabasse, et al.. Crosspoint Memory Arrays: Principle, Strengths and Challenges. 2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108143⟩. ⟨hal-03029495⟩
  • D. Alfaro Robayo, D. Deleruyelle, E. Vianello, N. Castellani, L. Ciampolini, et al.. Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration. 2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.35.3.1-35.3.4, ⟨10.1109/IEDM19573.2019.8993439⟩. ⟨hal-03029486⟩
  • Abdelkader Souifi, Pierre-Vincent Guenery, D. Deleruyelle, Liviu Militaru, J. Moeyaert, et al.. Optimization of resistive memories using In2O3 nanostructures integration with a CMOS Back-End-Off-Line process. Annual Conference on Nanotechnology and Advanced Materials, Nov 2019, San Francisco, United States. ⟨hal-03029510⟩
  • Prabir Mahato, Etienne Puyoo, Damien Deleruyelle, Sébastien Pruvost. CBRAM devices with a water casted solid polymer electrolyte for flexible electronic applications. 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Oct 2019, Stockholm, France. pp.1-5, ⟨10.1109/NMDC47361.2019.9083996⟩. ⟨hal-03029533⟩
  • P.-V. Guenery, E. Leon Perez, K. Ayadi, J. Moeyaert, S. Labau, et al.. Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL. 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Jul 2018, Cork, Ireland. pp.1-2, ⟨10.1109/NANO.2018.8626323⟩. ⟨hal-02330674⟩
  • Jean-Jacques Fagot, Philippe Boivin, V. Della Marca, Jeremie Postel-Pellerin, Damien Deleruyelle, et al.. Low Cost Diode as Selector Device for Embedded Phase Change Memory in Advanced FD-SOI Technology. IEEE International Memory Workshop (IMW 2018), May 2018, Kyoto, Japan. ⟨10.1109/IMW.2018.8388839⟩. ⟨hal-01900758⟩
  • Prabir Mahato, Etienne Puyoo, Sébastien Pruvost, D. Deleruyelle. Conductive Bridge Random Access Memory Devices Based on an Ecofriendly Solid Polymer Electrolyte. 8th Advanced Functional Materials and Devices, Aug 2018, Leuven, Belgium. ⟨hal-03029542⟩
  • Prabir Mahato, Etienne Puyoo, Sébastien Pruvost, Damien Deleruyelle. Conductive Bridge Random Access Memory devices with Ecofriendly Solid Polymer Electrolyte for flexible electronics applications. 11th International Symposium on Organic Flexible Electronics (ISFOE), Jul 2018, Thessaloniki, Greece. ⟨hal-03029545⟩
  • A. Krakovinsky, Marc Bocquet, R. Wacquez, J. Coignus, D. Deleruyelle, et al.. Impact of a Laser Pulse On HfO$_2$-based RRAM Cells Reliability and Integrity. 2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, Unknown, Unknown Region. pp.152-156. ⟨hal-01435097⟩
  • G. Piccolboni, G. Molas, M. Portal, R. Coquand, Marc Bocquet, et al.. Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications. 2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩. ⟨hal-01804658⟩
  • Charles Rebora, Marc Bocquet, T. Ouled-Khachroum, Magali Putero, Damien Deleruyelle. Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte. 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872754⟩. ⟨hal-01804660⟩
  • Jean-Michel Portal, M. Moreau, Marc Bocquet, Hassen Aziza, D. Deleruyelle, et al.. Analytical study of complementary memristive synchronous logic gates. 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, France. ⟨10.1109/NanoArch.2013.6623047⟩. ⟨hal-01827052⟩
  • Jean-Michel Portal, Mathieu Moreau, Marc Bocquet, Hassen Aziza, Damien Deleruyelle, et al.. Analytical study of complementary memristive synchronous logic gates. 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, United States. ⟨10.1109/NanoArch.2013.6623047⟩. ⟨hal-01745759⟩
  • Y Zhang, Erya Deng, Jacques-Olivier Klein, Damien Querlioz, DafinÉ Ravelosona, et al.. Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells. 11th International New Circuits and Systems Conference (NEWCAS), Jun 2013, Paris, France. ⟨10.1109/NEWCAS.2013.6573578⟩. ⟨hal-01840795⟩
  • Weisheng Zhao, Y Zhang, Jacques-Olivier Klein, Damien Querlioz, Dafine Ravelosona, et al.. Crossbar architecture based on 2R complementary resistive switching memory cell. 2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩. ⟨hal-01745351⟩
  • S Tirano, Marc Bocquet, Christophe Muller, D. Deleruyelle, L. Perniola, et al.. On the electrical variability of resistive-switching memory devices based on NiO oxide. 2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), Dec 2011, Arlington, United States. ⟨hal-01745633⟩
  • Christophe Muller, D. Deleruyelle, O. Ginez, Jean-Michel Portal, Marc Bocquet. Design challenges for prototypical and emerging memory concepts relying on resistance switching. 2011 IEEE Custom Integrated Circuits Conference (CICC 2011), Sep 2011, San Jose, CA, United States. ⟨10.1109/CICC.2011.6055316⟩. ⟨hal-01745644⟩
  • L. Courtade, C. Turquat, J.G. Lisoni, L. Goux, D.J. Wouters, et al.. Integration of resistive switching NiO in small via structures from localized oxidation of nickel metallic layer. ESSDERC 2008 - 38th European Solid-State Device Research Conference, Sep 2008, Edinburgh, United Kingdom. pp.218-221. ⟨hal-02271988⟩
  • D. Deleruyelle, D. Fraboulet, B. de Salvo, N. Buffet, D. Mariolle, et al.. Electrical characterization of memory cell structures using multiple tunnels junctions with embedded Si nanocrystals. Silicon Nano-electronics Workshop 2002, 2002, Honolulu, United States. ⟨hal-00484534⟩
  • D. Deleruyelle, C. Leroyer, B. de Salvo, G. Lecarval, M. Gely, et al.. A new memory concept: the Nano-Multiple-Tunnel-Junction memory with embedded Si nano-crystals. Silicon Nanoelectronics Workshop, 2002, Honolulu, United States. pp.Volume 72, Issues 1-4, Pages 399-404. ⟨hal-00485182⟩

Poster communications1 document

  • Pedro Rojo Romeo, Infante Ingrid C., Greta Segantini, Pedro Romeo, Benoit Manchon, et al.. Influence of bottom electrodes on HZO thin film features. Material Challenge for Memory Applications 2021, Apr 2021, New York, United States. ⟨hal-03274227⟩