Damien Deleruyelle
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Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layerphysica status solidi (RRL) - Rapid Research Letters, 2022, 2100583, pp.2100583. ⟨10.1002/pssr.202100583⟩
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hal-03759538v1
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Insertion of an Ultra‐thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.physica status solidi (RRL) - Rapid Research Letters, 2022, 16 (10), pp.2100585. ⟨10.1002/pssr.202100585⟩
Article dans une revue
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Indium oxide nanoparticles for Resistive RAM integration using a compatible industrial technologySolid-State Electronics, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩
Article dans une revue
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Engineering the nano and micro structures of sputtered HfZrO2 thin films15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel
Communication dans un congrès
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How ALD deposition analysis can help PVD deposition process!9ème Workshop RAFALD, GDR RAFALD, Nov 2023, Lille (France), France
Communication dans un congrès
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Elaboration and imprint consideration in HfZrO2 ferroelectric capacitorsHigh k Workshop 2023, NamLab, May 2023, Dresden, Germany
Communication dans un congrès
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Influence of the electrode interface on the properties of ferroelectric HfZrO2High k Workshop 2022, NamLab, Sep 2022, Dresden, Germany
Communication dans un congrès
hal-03775873v1
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Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced FerroelectricityISAF-PFM-ECAPD 2022, Jun 2022, Tours, France
Communication dans un congrès
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A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switchingISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès
hal-03719104v1
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How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical propertiesEMRS 2022 Spring Meeting - Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films VIII and 6th E-MRS & MRS-J bilateral symposium, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès
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Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced propertiesEMRS 2022 Spring Meeting - Symposium E : Adaptive materials and devices for brain-inspired electronics, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès
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Study of Polarisation and Conduction Mechanisms in Ferroelectric Hf0.5Zr0.5O2 Down to Deep Cryogenic Temperature 4.2 KISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès
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Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctionsEMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Communication dans un congrès
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Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic ApplicationEMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Communication dans un congrès
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Effect of bottom electrodes on HZO thin film propertiesInternational Symposium on Applications of Ferroelectrics (ISAF) 2021, https://isaf-isif-pfm2021.org/, May 2021, Sydney, Australia
Communication dans un congrès
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Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Jul 2018, Cork, Ireland. pp.1-2, ⟨10.1109/NANO.2018.8626323⟩
Communication dans un congrès
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