Damien Deleruyelle
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Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrateSolid-State Electronics, 2012, ⟨10.1016/j.sse.2012.06.010⟩
Article dans une revue
emse-00767177v1
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Evidence for correlated structural and electrical changes in a Ge2Sb2Te5 thin film from combined synchrotron X-ray techniques and sheet resistance measurements during in situ thermal annealingJournal of Applied Crystallography, 2011, 44, pp.858-864. ⟨10.1107/S0021889811024095⟩
Article dans une revue
hal-01951268v1
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