Damien Deleruyelle
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Degradation of floating gate memory reliability by few electron phenomenaIEEE Transactions on Electron Devices, 2006, 53, pp.2610
Article dans une revue
hal-00145101v1
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Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.35.3.1-35.3.4, ⟨10.1109/IEDM19573.2019.8993439⟩
Communication dans un congrès
hal-03029486v1
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Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩
Communication dans un congrès
hal-01804658v1
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