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Damien Deleruyelle

22

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	OxRAM+OTS optimization for Binarized Neural Network hardware implementation Joel Minguet Lopez , Tifenn Hirtzlin , Manon Dampfhoffer , Laurent Grenouillet , Lucas Reganaz Semiconductor Science and Technology, 2021, 37 (1), pp.014001. ⟨10.1088/1361-6641/ac31e2⟩ Article dans une revue hal-03418653v1
	Conductive-bridge memory cells based on a nano-porous electrodeposited GeSbTe alloy Charles Rebora , Ruomeng Huang , Gabriela P. Kissling , Marc Bocquet , C H (kees) De Groot Nanotechnology, 2018, ⟨10.1088/1361-6528/aae6db⟩ Article dans une revue hal-01951256v1
	Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO$_2$ )/28 nm FDSOI CMOS Technology Jean-Michel Portal , Marc Bocquet , Santhosh Onkaraiah , Mathieu Moreau , Hassen Aziza IEEE Transactions on Nanotechnology, 2017, 16, pp.677 - 686. ⟨10.1109/TNANO.2017.2703985⟩ Article dans une revue hal-01745418v1
	Resistance controllability and variability improvement in a TaO x -based resistive memory for multilevel storage application A. Prakash , D. Deleruyelle , J. Song , Marc Bocquet , H. Hwang Applied Physics Letters, 2015, 106 (23), pp.233104. ⟨10.1063/1.4922446⟩ Article dans une revue hal-01737306v1
	Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories Weisheng Zhao , Mathieu Moreau , Erya Deng , Yue Zhang , Jean-Michel Portal IEEE Transactions on Circuits and Systems I: Regular Papers, 2014, 61 (2), pp.443 - 454. ⟨10.1109/TCSI.2013.2278332⟩ Article dans une revue hal-01743999v1
	Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories Marc Bocquet , Damien Deleruyelle , Hassen Aziza , Christophe Muller , Jean-Michel Portal IEEE Transactions on Electron Devices, 2014, 61 (3), pp.674 - 681. ⟨10.1109/TED.2013.2296793⟩ Article dans une revue hal-01737291v1
	Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM) Marc Bocquet , Hassen Aziza , Weisheng Zhao , Yue Zhang , Santhosh Onkaraiah Journal of Low Power Electronics and Applications, 2014, 4 (1), pp.1-14. ⟨10.3390/jlpea4010001⟩ Article dans une revue hal-01737320v1
	Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells W. Zhao , M. Portal , W. Kang , Mathieu Moreau , Y. Zhang Journal of Parallel and Distributed Computing, 2014, 74 (6), pp.2484 - 2496. ⟨10.1016/j.jpdc.2013.08.004⟩ Article dans une revue hal-01744000v1
	An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies Jean-Michel Portal , Marc Bocquet , Mathieu Moreau , Hassen Aziza , Damien Deleruyelle Journal of Electronic Science and Technology, 2014, 12 (2), pp.173 - 181. ⟨10.3969/j.issn.1674-862X.2014.02.007⟩ Article dans une revue hal-01745646v1
	Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up H. Hraziia , Adam Makosiej , Giorgio Palma , Jean-Michel Portal , Marc Bocquet Solid-State Electronics, 2013, 90, pp.99-106. ⟨10.1016/j.sse.2013.02.045⟩ Article dans une revue hal-01744003v1
	Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down Applications Jean-Michel Portal , Marc Bocquet , Damien Deleruyelle , Christophe Muller Journal of Low Power Electronics, 2012, 8 (1), pp.1 - 10. ⟨10.1166/jolpe.2012.1172⟩ Article dans une revue hal-01745507v1
	Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate D. Deleruyelle , Magali Putero , T. Ouled-Khachroum , Marc Bocquet , M.V. Coulet Solid-State Electronics, 2012, ⟨10.1016/j.sse.2012.06.010⟩ Article dans une revue emse-00767177v1
	Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories Marc Bocquet , Damien Deleruyelle , Christophe Muller , Jean-Michel Portal Applied Physics Letters, 2011, 98 (26), ⟨10.1063/1.3605591⟩ Article dans une revue hal-01779321v1

	Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1S1R crossbar arrays J. Minguet Lopez , N. Castellani , L. Grenouillet , L. Reganaz , G. Navarro 2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), May 2021, Dresde, Germany. pp.107-110, ⟨10.1109/IMW51353.2021.9439606⟩ Communication dans un congrès hal-03622145v1
	Impact of a Laser Pulse On HfO$_2$-based RRAM Cells Reliability and Integrity A. Krakovinsky , Marc Bocquet , R. Wacquez , J. Coignus , D. Deleruyelle 2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, Unknown, Unknown Region. pp.152-156 Communication dans un congrès hal-01435097v1
	Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications G. Piccolboni , G. Molas , M. Portal , R. Coquand , Marc Bocquet 2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩ Communication dans un congrès hal-01804658v1
	Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte Charles Rebora , Marc Bocquet , T. Ouled-Khachroum , Magali Putero , Damien Deleruyelle 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872754⟩ Communication dans un congrès hal-01804660v1
	Analytical study of complementary memristive synchronous logic gates Jean-Michel Portal , Mathieu Moreau , Marc Bocquet , Hassen Aziza , Damien Deleruyelle 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, United States. ⟨10.1109/NanoArch.2013.6623047⟩ Communication dans un congrès hal-01745759v1
	Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells Y Zhang , Erya y Deng , Jacques-Olivier O Klein , Damien Querlioz , Dafiné Ravelosona 11th International New Circuits and Systems Conference (NEWCAS), Jun 2013, Paris, France. ⟨10.1109/NEWCAS.2013.6573578⟩ Communication dans un congrès hal-01840795v1
	Crossbar architecture based on 2R complementary resistive switching memory cell Weisheng Zhao , Y Zhang , Jacques-Olivier Klein , Damien S Querlioz , Dafine Ravelosona 2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩ Communication dans un congrès hal-01745351v1
	Design challenges for prototypical and emerging memory concepts relying on resistance switching Christophe Muller , D. Deleruyelle , O. Ginez , Jean-Michel Portal , Marc Bocquet 2011 IEEE Custom Integrated Circuits Conference (CICC 2011), Sep 2011, San Jose, CA, United States. ⟨10.1109/CICC.2011.6055316⟩ Communication dans un congrès hal-01745644v1
	On the electrical variability of resistive-switching memory devices based on NiO oxide S Tirano , Marc Bocquet , Christophe Muller , D. Deleruyelle , L. Perniola 2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), Dec 2011, Arlington, United States Communication dans un congrès hal-01745633v1