Damien Deleruyelle
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Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric CapacitorsAdvanced Electronic Materials, 2023, pp.2300171. ⟨10.1002/aelm.202300171⟩
Article dans une revue
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Insertion of an Ultra‐thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.physica status solidi (RRL) - Rapid Research Letters, 2022, 16 (10), pp.2100585. ⟨10.1002/pssr.202100585⟩
Article dans une revue
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Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr 0.2 Ti 0.8 O 3 Films Assisted by NanocavitiesAdvanced Electronic Materials, 2022, pp.2200077. ⟨10.1002/aelm.202200077⟩
Article dans une revue
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Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layerphysica status solidi (RRL) - Rapid Research Letters, 2022, 2100583, pp.2100583. ⟨10.1002/pssr.202100583⟩
Article dans une revue
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Engineering the nano and micro structures of sputtered HfZrO2 thin films15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel
Communication dans un congrès
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Interfaces engineering to enhance ferroelectricity in ultra-thin HZO CMOS compatible FTJEMRS 2023 Fall Meeting, European Materials Research Society, Sep 2023, Warsaw (Poland), Poland
Communication dans un congrès
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Elaboration and imprint consideration in HfZrO2 ferroelectric capacitorsHigh k Workshop 2023, NamLab, May 2023, Dresden, Germany
Communication dans un congrès
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Study of Imprint Dynamics in HZO Ferroelectric CapacitorsInternational Symposium on Applications of Ferroelectrics 2023, IEEE; UFFC, Jul 2023, Cleveland, United States
Communication dans un congrès
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Influence of Interfaces on the Enhanced Ferroelectricity of Ultra-Thin HZO-Based Tunnel JunctionsISAF-ISIF-PFM 2023 SYMPOSIUM, IEEE; UFFC, Jul 2023, Cleveland, United States
Communication dans un congrès
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How ALD deposition analysis can help PVD deposition process!9ème Workshop RAFALD, GDR RAFALD, Nov 2023, Lille (France), France
Communication dans un congrès
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Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel
Communication dans un congrès
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Study of Imprint dynamics in CMOS compatible HZO ferroelectric capacitorsEMRS 2023 Fall Meeting, European Materials Research Society (E-MRS), Sep 2023, Warsaw, Poland
Communication dans un congrès
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Influence of the electrode interface on the properties of ferroelectric HfZrO2High k Workshop 2022, NamLab, Sep 2022, Dresden, Germany
Communication dans un congrès
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Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced FerroelectricityISAF-PFM-ECAPD 2022, Jun 2022, Tours, France
Communication dans un congrès
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A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switchingISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès
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Study of Polarisation and Conduction Mechanisms in Ferroelectric Hf0.5Zr0.5O2 Down to Deep Cryogenic Temperature 4.2 KISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès
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How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical propertiesEMRS 2022 Spring Meeting - Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films VIII and 6th E-MRS & MRS-J bilateral symposium, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès
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Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced propertiesEMRS 2022 Spring Meeting - Symposium E : Adaptive materials and devices for brain-inspired electronics, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès
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Effect of bottom electrodes on HZO thin film propertiesInternational Symposium on Applications of Ferroelectrics (ISAF) 2021, https://isaf-isif-pfm2021.org/, May 2021, Sydney, Australia
Communication dans un congrès
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Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctionsEMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Communication dans un congrès
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Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applicationsJournées de la matière condensée (JMC17), Société française de physique (SFP), Aug 2021, Rennes, France
Communication dans un congrès
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Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic ApplicationEMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Communication dans un congrès
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Influence of bottom electrodes on HZO thin film featuresMaterial Challenge for Memory Applications 2021, Apr 2021, New York, United States
Poster de conférence
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Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctionsPoster de conférence hal-03275569v1 |