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131 résultats
Spectral Hole Burning Spectroscopy on Quantum Dashes and Quantum Dots for Dual-Frequency Laser EngineeringCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, France. pp.1-2
Communication dans un congrès
hal-02290557v1
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Lasers à îlots quantiques InAs/InP émettant à 1.55 µm pompés électriquement10èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2004), Jun 2004, La Grande Motte, France
Communication dans un congrès
hal-00149423v1
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A 34 nm monolithic continuously tunable VCSEL at 1.55 µmEuropean Semiconductor Laser Workshop 2011, Sep 2011, Lausanne, Switzerland
Communication dans un congrès
hal-00662811v1
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Polarization control of 1.6 µm vertical-cavity surface-emitting lasers using InAs quantum dashes on InP(001)Applied Physics Letters, 2009, 95, pp.011117. ⟨10.1063/1.3176437⟩
Article dans une revue
hal-00485689v1
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Fonctionnement Classe A faible bruit d'un laser VECSEL injecté électriquement et émettant à 1,5 µmJournée du Club Optique et Micro-ondes (JCOM 2021), Jun 2021, Paris, France
Communication dans un congrès
hal-03386462v1
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Lasers devices based on nanostructures grown on InP substrate for 1.55 μm emissionWorkshop Frontier 2010, Dec 2010, Albi, France
Communication dans un congrès
hal-00589343v1
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Enhancement of VCSEL performances with a new bonding processPoster de conférence hal-01328013v1 |
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Mode Coupling Measurement in Dual-Frequency Quantum Well-based VECSELCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, Japan. pp.1-2
Communication dans un congrès
hal-02290594v1
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Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.141, ⟨10.1051/jp4:2006135031⟩
Communication dans un congrès
hal-00491480v1
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GaSb VCSEL with III-As metamorphic confinement layer grown by molecular beam epitaxyeuro-MBE conference, Mar 2013, Levi, Finland. pp.240-241
Communication dans un congrès
hal-00955685v1
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Enhancement of the polarization stability of a 1.55 µm emitting vertical-cavity surface-emitting laser under modulation using quantum dashesOptics Express, 2012, 20 (15), pp.16832-16837. ⟨10.1364/OE.20.016832⟩
Article dans une revue
hal-00717931v1
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1.55 μm VCSEL based on InAs quantum-dashes with an emission covering 105 nm wavelength rangeEuro VCSEL-DAY 2013, May 2013, Lausanne, Switzerland
Communication dans un congrès
hal-00920834v1
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20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate24th International Conference on Indium Phosphide and Related Materials (IPRM 2012), Aug 2012, Santa Barbara, United States. pp.181-184, ⟨10.1109/ICIPRM.2012.6403352⟩
Communication dans un congrès
hal-00726881v1
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High Frequency Quantum Dots Mode Locked Laser for Telecommunication ApplicationsEuropean Semiconductor Laser Workshop (ESLW 2012), Sep 2012, Brussels, Belgium
Communication dans un congrès
hal-00806320v1
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Etude de l'Emission Laser par Pompage Optique de Guides Semiconducteurs à Îlots Quantiques InAs/InP Emettant à 1,52 µm21èmes Journées Nationales d'Optique Guidée (JNOG 2002), Sep 2002, Dijon, France. pp.116-118
Communication dans un congrès
hal-00151071v1
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Lasers à base d'îlots quantiques InAs/Inp(100) et (311)B9èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2002), Oct 2002, Saint-Aygulf, France
Communication dans un congrès
hal-00148526v1
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Liquid-Crystal alignment by a nanoimprinted grating for wafer-scale fabrication of tunable devicesIEEE Photonics Technology Letters, 2018, 30 (15), pp.1388-1391. ⟨10.1109/LPT.2018.2849641⟩
Article dans une revue
hal-01839878v1
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Tunable VCSEL with intracavity liquid crystal layer3rd Scientific EOS Annual Meeting (EOSAM 2010), Oct 2010, Paris, France
Communication dans un congrès
hal-00565932v1
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Demonstration of a 34 nm monolithic continuously tunable VCSEL at 1.55 µm combined with liquid crystalCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany
Communication dans un congrès
hal-00609330v1
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InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrateCompound Semiconductor Week 2013 - 25th International Conference on Indium Phosphide and Related Materials (IPRM 2013), May 2013, Kobe, Japan. IEEE (ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562595⟩
Poster de conférence
hal-01167841v1
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1540 to 1645 nm continuous VCSEL emission based on quantum dashes25th International Conference on Indium Phosphide and Related Materials (IPRM), May 2013, Kobe, Japan. pp.1-2, ⟨10.1109/ICIPRM.2013.6562594⟩
Communication dans un congrès
hal-00874600v1
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A quantum dot-based semiconductor membrane external-cavity surface-emitting laser (MECSEL) emitting around 1.5 μmEuropean Semiconductor Laser Workshop (ESLW 2020), Dec 2020, Eindhoven, Netherlands
Communication dans un congrès
hal-03060098v1
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Investigation of a Quantum Dot Vertical External-Cavity Surface-Emitting Laser: Towards THz Frequency Generation37è Journées Nationales d'Optique Guidée (JNOG 2017), Jul 2017, Limoges, France. 2017
Poster de conférence
hal-01693879v1
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1.5 µm Quantum Dots Spectral Hole Burning experiments for dual frequency laser engineering34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
Communication dans un congrès
hal-01859151v1
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Carrier dynamics and saturation effect in (311)B InAs/InP quantum dot lasersPHASE 2005, international workshop on physics and applications of semiconductors lasers, 2005, Metz, France. pp.1
Communication dans un congrès
hal-00504411v1
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Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layersCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States
Communication dans un congrès
hal-01147506v1
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Low threshold 1550 nm emitting QD optically pumped VCSELIEEE Photonics Technology Letters, 2021, 33 (2), pp.69-72. ⟨10.1109/LPT.2020.3044457⟩
Article dans une revue
hal-03101472v1
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Enhancement of VCSEL Performances Using Localized Copper Bonding Through Silicon ViasIEEE Photonics Technology Letters, 2017, 29 (13), pp.1105 - 1108. ⟨10.1109/LPT.2017.2703599⟩
Article dans une revue
hal-01582538v1
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Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrateMaterials Science and Engineering: B, 2012, 177 (11), pp.882-886. ⟨10.1016/j.mseb.2012.03.053⟩
Article dans une revue
hal-00698574v1
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Carrier diffusion in low-dimensional semiconductors: A comparison of quantum wells, disordered quantum wells, and quantum dotsPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70, pp.205311. ⟨10.1103/PhysRevB.70.205311⟩
Article dans une revue
hal-00485772v1
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