Identifiants chercheur

  • IdHAL : corentin-durand

Réseaux sociaux

Nombre de documents

22

Corentin Durand


Article dans une revue10 documents

Communication dans un congrès11 documents

  • Corentin Durand. Au(111) characterization, single atom manipulation and Si(100):H surface imaging by LT-UHV-4P-STM. . AVS 63rd International Symposium & Exhibition , Nov 2016, Nashville TN United States. 〈hal-01745411〉
  • Corentin Durand, Pierre Capiod, M. Berthe, Tao Xu, Jean-Philippe Nys, et al.. Electrical characterization of semiconductor nanowires by scanning tunneling microscopy. SPIE Photonics West, OPTO, Conference 8996 - Quantum Dots and Nanostructures : Synthesis, Characterization, and Modeling XI, 2014, San Francisco, CA, United States. 8996, 89960E, 10 p., 2014, 〈10.1117/12.2042767〉. 〈hal-00974539〉
  • M. Berthe, C. Durand, R. Leturcq, B. Grandidier. Nanoscale transport measurements with multiple probe scanning tunneling microscopy. 16th International Congress of Metrology, 2013, Paris, France. S20 Nanotechnology, 13001, 4 p., 2013, 〈10.1051/metrology/201313001〉. 〈hal-00877775〉
  • C. Durand, P. Capiod, M. Berthe, J.P. Nys, B. Grandidier. Ionisation par impact dans les jonctions p-n de silicium. 16ème Forum des Microscopies à Sondes Locales, 2013, Spa, Belgique. 〈hal-00956271〉
  • C. Durand, M. Berthe, Y. Makoudi, T.H. Nguyen, P. Caroff, et al.. Electrical transport measurements of individual III-V semiconductor nanowires with reconstructed sidewalls. International Conference on Nanoscience and Technology, ICN+T 2012, 2012, Paris, France. 〈hal-00798122〉
  • C. Durand, M. Berthe, Y. Makoudi, T.H. Nguyen, P. Caroff, et al.. Electrical transport measurements and topography of III-V semiconductor nanowires by four probe and low temperature scanning tunneling microscopy. Materials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Semiconductor nanowires for photovoltaics, 2011, Boston, MA, United States. 〈hal-00807581〉
  • C. Durand, M. Berthe, T.H. Nguyen, P. Caroff, J.P. Nys, et al.. Étude des propriétés électroniques de nanofils semiconducteurs d'InAs par microscopie à effet tunnel basse température et quatre pointes. 14ème Forum des Microscopies à Sonde Locale, 2011, Ecully, France. 〈hal-00807239〉
  • M. Berthe, C. Durand, B. Grandidier. Four-point probe measurements at the nanoscale. Herodot Summer School, 2011, Cargese, France. 〈hal-00807585〉
  • C. Durand, M. Berthe, T.H. Nguyen, P. Caroff, J.P. Nys, et al.. Electrical transport measurements and topography of semiconductor nanowires by four probe and low temperature scanning tunneling microscopy. Herodot Summer School, 2011, Cargese, France. 〈hal-00807584〉
  • C. Durand, M. Berthe, Y. Makoudi, T.H. Nguyen, P. Caroff, et al.. Electrical transport measurements and topography of III-V semiconductor nanowires by four probe and low temperature scanning tunneling microscopy. 4th Plenary Workshop of GdR Nanofils Semiconducteurs, 2011, Porquerolles, France. 〈hal-00807242〉
  • M. Berthe, C. Durand, T. Xu, J.P. Nys, P. Caroff, et al.. Combined STM and four-probe resistivity measurements on single semiconductor nanowires. 1st AtMol International Workshop on Atomic Scale Interconnection Machine, 2011, Singapore, Singapore. pp.107-118, 2011, 〈10.1007/978-3-642-28172-3_8〉. 〈hal-00800076〉

Autre publication1 document

  • Corentin Durand. Phénomènes de transport dans les nanostructures semi-conductrices étudiés par microscopie à effet tunnel à pointes multiples. 10885. Thèse de doctorat en Micro et Nano Technologies, Acoustique et Télécommunications, Université.. 2012. 〈hal-00799310〉