Number of documents

61

CV de Christophe Raynaud


Journal articles39 documents

  • Dominique Planson, Besar Asllani, Luong-Viet Phung, Pascal Bevilacqua, Hassan Hamad, et al.. Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors. Materials Science in Semiconductor Processing, Elsevier, 2019, 94, pp.116-127. ⟨10.1016/j.mssp.2019.01.042⟩. ⟨hal-02053053⟩
  • Teng Zhang, Christophe Raynaud, Dominique Planson. Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts. European Physical Journal: Applied Physics, EDP Sciences, 2019, 85 (1), pp.10102. ⟨10.1051/epjap/2018180282⟩. ⟨hal-02047099⟩
  • Jean-François Mogniotte, Dominique Tournier, Christophe Raynaud, Mihai Lazar, Dominique Planson, et al.. Silicon Carbide Technology of MESFET-Based Power Integrated Circuits. IEEE Journal of Emerging and Selected Topics in Power Electronics, Institute of Electrical and Electronics Engineers, 2018, 6 (2), pp.539 - 548. 〈10.1109/JESTPE.2017.2778002〉. 〈hal-01864533〉
  • Dominique Planson, Besar Asllani, Hassan Hamad, M.-L Locatelli, R Arvinte, et al.. Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode. Materials Science Forum, Trans Tech Publications Inc., 2018, Silicon Carbide and Related Materials 2017, 924, pp.577-580. ⟨https://www.mrs.org/icscrm-2017⟩. ⟨10.4028/www.scientific.net/MSF.924.577⟩. ⟨hal-01818806⟩
  • Gabriel Ferro, Selsabil Sejil, Mihai Lazar, D. Carole, C. Brylinski, et al.. Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions. physica status solidi (a), Wiley, 2017, 214 (4), ⟨10.1002/pssa.201600454⟩. ⟨hal-01615190⟩
  • Hassan Hamad, Dominique Planson, Christophe Raynaud, Pascal Bevilacqua. OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K. Semiconductor Science and Technology, IOP Publishing, 2017, 32 (5), pp.4001. ⟨10.1088/1361-6641/aa641d⟩. ⟨hal-01626154⟩
  • Hassan Hamad, Dominique Planson, Christophe Raynaud, Pascal Bevilacqua. OBIC Technique Applied to Wide Bandgap Semiconductors. Semiconductor Science and Technology, IOP Publishing, 2017, 32 (5), ⟨10.1088/1361-6641/aa641d/meta⟩. ⟨hal-01865068⟩
  • Selsabil Sejil, Loïc Lalouat, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters. Materials Science Forum, Trans Tech Publications Inc., 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩. ⟨hal-01648360⟩
  • Julien Pezard, Véronique Soulière, Mihai Lazar, Naoufel Haddour, François Buret, et al.. Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections. Materials Science Forum, Trans Tech Publications Inc., 2017, 897, pp.739 - 742. ⟨10.4028/www.scientific.net/MSF.897.739⟩. ⟨hal-01644735⟩
  • Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Christophe Raynaud, et al.. A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2016, 63 (6), pp.2462 - 2468. ⟨10.1109/TED.2016.2556725⟩. ⟨hal-01387992⟩
  • Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Christophe Raynaud, et al.. Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti3SiC2 Phase. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.553 - 556. ⟨10.4028/www.scientific.net/MSF.858.553⟩. ⟨hal-01388027⟩
  • Selsabil Sejil, Mihai Lazar, Frédéric Cayrel, Davy Carole, Christian Brylinski, et al.. Optimization of VLS Growth Process for 4H-SiC P/N Junctions. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.205 - 208. ⟨10.4028/www.scientific.net/MSF.858.205⟩. ⟨hal-01388031⟩
  • Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Sigo Scharnholz, Bertrand Vergne, et al.. Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption . Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.245 - 248. ⟨10.4028/www.scientific.net/MSF.858.245⟩. ⟨hal-01388035⟩
  • Mihai Lazar, Selsabil Sejil, L. Lalouat, Christophe Raynaud, D. Carole, et al.. P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices. Romanian Journal of Information Science and Technology (ROMJIST) (ISSN: 1453-8245), 2015, 18 (4), pp.329-342. 〈http://www.romjist.ro/content/pdf/03-lazar.pdf〉. 〈hal-01626119〉
  • Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. 2D Electric field imagery in 4H-SiC power diodes using OBIC technique. European Physical Journal: Applied Physics, EDP Sciences, 2015, 72 (2), ⟨10.1051/epjap/2015150054⟩. ⟨hal-01387989⟩
  • Selsabil Sejil, Farah Laariedh, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩. ⟨hal-01387983⟩
  • Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Sigo Scharnholz, Dominique Planson. Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.223 - 228. ⟨10.4028/www.scientific.net/MSF.821-823.223⟩. ⟨hal-01387987⟩
  • Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Dominique Tournier, Bertrand Vergne, et al.. Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes. Applied Physics Letters, American Institute of Physics, 2014, 104 (8), ⟨10.1063/1.4866581⟩. ⟨hal-01387924⟩
  • Cyril Buttay, Rémy Ouaida, Hervé Morel, Dominique Bergogne, Christophe Raynaud, et al.. Thermal Stability of Silicon Carbide Power JFETs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (12), pp.4191 - 4198. ⟨10.1109/TED.2013.2287714⟩. ⟨hal-00881667⟩
  • Rémy Ouaida, Cyril Buttay, Anh Dung Hoang, Raphaël Riva, Dominique Bergogne, et al.. Thermal Runaway Robustness of SiC VJFETs. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.929-933. ⟨10.4028/www.scientific.net/MSF.740-742.929⟩. ⟨hal-00799884⟩
  • Cyril Buttay, Christophe Raynaud, Hervé Morel, Gabriel Civrac, Marie-Laure Locatelli, et al.. Thermal stability of silicon-carbide power diodes. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59 (3), pp.761-769. ⟨10.1109/TED.2011.2181390⟩. ⟨hal-00672440⟩
  • Duy Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, et al.. OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩. ⟨hal-00803059⟩
  • Duy Minh Nguyen, Christophe Raynaud, Nicolas Dheilly, Mihai Lazar, Dominique Tournier, et al.. Experimental determination of impact ionization coefficients in 4H-SiC. Diamond and Related Materials, Elsevier, 2011, 20 (3), pp.395-397. 〈10.1016/j.diamond.2011.01.039〉. 〈hal-00661429〉
  • Nicolas Dheilly, Gontran Pâques, Sigo Scharnholz, Pascal Bevilacqua, Christophe Raynaud, et al.. Optical triggering of SiC thyristors using UV LEDs. Electronics Letters, IET, 2011, 47 (7), pp.459 - 460. ⟨10.1049/el.2010.7041⟩. ⟨hal-00661435⟩
  • Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. Advanced Materials Research, Trans Tech Publications, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩. ⟨hal-00799902⟩
  • Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of high temperature power electronics. Materials Science and Engineering: B, Elsevier, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩. ⟨hal-00597432⟩
  • Christophe Raynaud, Dominique Tournier, Hervé Morel, Dominique Planson. Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices. Diamond and Related Materials, Elsevier, 2010, 19 (1), pp.1-6. 〈10.1016/j.diamond.2009.09.015〉. 〈hal-00476195〉
  • Christophe Raynaud, Duy Minh Nguyen, Pierre Brosselard, Amador Pérez-Tomás, Dominique Planson, et al.. Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses. Materials Science Forum, Trans Tech Publications Inc., 2009, 615-617, pp.671-674. ⟨10.4028/www.scientific.net/MSF.615-617.671⟩. ⟨hal-00391462⟩
  • Tarek Ben Salah, Damien Risaletto, Christophe Raynaud, Kamel Besbes, Dominique Bergogne, et al.. Determination of ambipolar lifetime and epilayer thickness of 5kV SiC bipolar devices by transient switching studies. Materials Science Forum, Trans Tech Publications Inc., 2008, 600-603, pp.1031-1034. ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩. ⟨hal-00391482⟩
  • Christophe Raynaud, Karine Isoird, Mihai Lazar, Cm Johnson, N. Wright. Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements. Journal of Applied Physics, American Institute of Physics, 2002, 91 (12), pp.9841-9847. ⟨hal-00141477⟩
  • Christophe Raynaud. Silica films on silicon carbide: a review of electrical properties and device applications. Journal of Non-Crystalline Solids, Elsevier, 2001, 280 (1-3), pp.1-31. ⟨hal-00141505⟩
  • S. Croci, C. Plossu, B. Balland, Christophe Raynaud, Pierre Boivin. Effect of some technological parameters on Fowler-Nordheim injection through tunnel oxides for non-volatile memories. Journal of Non-Crystalline Solids, Elsevier, 2001, 280 (1-3), pp.202-210. ⟨hal-00141506⟩
  • Christophe Raynaud. Calculation of theoretical capacitance-voltage characteristics of 6H-SiC metal-oxide-semiconductor structures. Journal of Applied Physics, American Institute of Physics, 2000, 88 (1), pp.424-428. ⟨hal-00141518⟩
  • J. Autran, P. Masson, N. Freud, Christophe Raynaud, C. Riekel. Micro-irradiation experiments in MOS transistors using synchrotron radiation. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2000, 47 (3 Part 1), pp.574-579. ⟨hal-00141515⟩
  • K. Ghaffour, V. Lauer, A. Souifi, G. Guillot, Christophe Raynaud, et al.. Characterisation of deep level trap centres in 6H-SiC p-n junction diodes. Materials Science and Engineering: B, Elsevier, 1999, 66 (1-3), pp.106-110. ⟨hal-00141523⟩
  • Christophe Raynaud, K. Ghaffour, S. Ortolland, Marie-Laure Locatelli, K. Souifi, et al.. Electrical characterization of silicon carbide n(+)pp(+) diodes with an N-implanted n(+) emitter. Journal of Applied Physics, American Institute of Physics, 1998, 84 (6), pp.3073-3077. ⟨hal-00141570⟩
  • S. Ortolland, Christophe Raynaud, Marie-Laure Locatelli, Jean-Pierre Chante, A. Senes. Surface effects on current mechanisms in 6H-SiC n(+)pp(+) structures passivated with a deposited oxide. Journal of Applied Physics, American Institute of Physics, 1998, 84 (3), pp.1688-1692. ⟨hal-00141583⟩
  • A. Lebedev, S. Ortolland, Christophe Raynaud, Marie-Laure Locatelli, Dominique Planson, et al.. Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures. Semiconductors, 1997, 31 (7), pp.735-737. 〈hal-00141601〉
  • S. Ortolland, Christophe Raynaud, Jean-Pierre Chante, A. Lebedev, A. Andreev, et al.. Effect of boron diffusion on the high-voltage behavior of 6H-SiC p(+)nn(+) structures. Journal of Applied Physics, American Institute of Physics, 1996, 80 (9), pp.5464-5468. ⟨hal-00141621⟩

Conference papers21 documents

  • Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel. Robustness study of 1700 V 45 mΩ SiC MOSFETs. 2018 IEEE ICIT, Feb 2018, Lyon, France. Proceedings of the 2018 IEEE International Conference on Industrial Technology, 〈http://icit2018.org/fr〉. 〈10.1109/ICIT.2018.8352285〉. 〈hal-01942728〉
  • Jean-François Mogniotte, Christophe Raynaud, Mihai Lazar, Bruno Allard, Dominique Planson. SiC lateral Schottky diode technology for integrated smart power converter. 2018 IEEE ICIT, Feb 2018, Lyon, France. IEEE, Proceedings of the 2018 IEEE International Conference on Industrial Technology, 2018, 〈10.1109/ICIT.2018.8352287〉. 〈hal-01864545〉
  • Teng Zhang, Christophe Raynaud, Dominique Planson. Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode. CSCRM, Sep 2018, Birmingham, United Kingdom. Proceedings of the 2018 European Conference on Silicon Carbide and Related Materials. 〈hal-02004837〉
  • Jean-François Mogniotte, Mihai Lazar, Christophe Raynaud, Bruno Allard. First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments. CAS, Oct 2017, Sinaia, Romania. Proceedings of the IEEE International Semiconductor Conference (Conferinta Anuala de Semiconductoare), 〈10.1109/SMICND.2017.8101191〉. 〈hal-01646319〉
  • Quentin Molin, Christophe Raynaud, Mehdi Kanoun, Hervé Morel. Repetitive short-circuit measurement on SiC MOSFET. CSCRM, Oct 2015, Giardini Naxos, Italy. Proceedings of the 2015 European Conference on Silicon Carbide and Related Materials, 858, pp.812-816, MATERIALS SCIENCE FORUM. 〈10.4028/www.scientific.net/MSF.858.812〉. 〈hal-01980834〉
  • Mihai Lazar, Davy Carole, Christophe Raynaud, Selsabil Sejil, Farah Laariedh, et al.. Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices. CAS, Oct 2015, Sinaia, Romania. Proceedings of the IEEE International Semiconductor Conference (Conferinta Anuala de Semiconductoare), pp.145 - 148, 2015, 〈http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6966365〉. 〈10.1109/SMICND.2015.7355190 〉. 〈hal-01388019〉
  • Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Dominique Planson. Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method. CAS, Oct 2015, Sinaia, Romania. Proceedings of the IEEE International Semiconductor Conference (Conferinta Anuala de Semiconductoare), 2015, 〈http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6966365〉. 〈10.1109/SMICND.2015.7355226〉. 〈hal-01388024〉
  • Dominique Planson, Pierre Brosselard, Karine Isoird, Mihai Lazar, Luong Viêt Phung, et al.. Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects. CAS, Oct 2014, Sinaia, Romania. IEEE, Proceedings of the IEEE International Semiconductor Conference (Conferinta Anuala de Semiconductoare), pp.35 - 40, 2014, 〈http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6966365〉. 〈10.1109/SMICND.2014.6966383〉. 〈hal-01388002〉
  • Hassan Hamad, Pascal Bevilacqua, Christophe Raynaud, Dominique Planson. Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes. 2014 IEEE PRIME, Jun 2014, Grenoble, France. Proceedings of the 2014 10th IEEE Conference on Ph.D. Research in Microelectronics and Electronics, 〈10.1109/PRIME.2014.6872761〉. 〈hal-01388043〉
  • Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. Actes. 〈hal-01065307〉
  • Rémy Ouaida, Cyril Buttay, Raphaël Riva, Dominique Bergogne, Christophe Raynaud, et al.. Thermal stability of SiC JFETs in conduction mode. EPE, Sep 2013, Lille, France. Proceedings of the IEEE 15th European Conference on Power Electronics and Applications, paper 223, 2013, 〈10.1109/EPE.2013.6631881〉. 〈hal-00874471〉
  • Rémy Ouaida, Cyril Buttay, Anh Dung Hoang, Raphaël Riva, Dominique Bergogne, et al.. Thermal Runaway Robustness of SiC VJFETs. CSCRM, Sep 2012, Saint-Pétersbourg, Russia. Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials, 2p, 2012. 〈hal-00759975v2〉
  • Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. CIMA, Mar 2011, Beyrouth, Lebanon. Proc. of the 1st Mediterranean Conference on Innovative Materials and Applications, Advances in Innovative Materials and Applications, pp.CD, 2011. 〈hal-00661500〉
  • Cyril Buttay, Amandine Masson, Jianfeng Li, Mark Johnson, Mihai Lazar, et al.. Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization. IMAPS. HiTEN 2011, Jul 2011, Oxford, United Kingdom. Proceedings of the High Temperature Electronics Network conference, pp.1-7, 2011. 〈hal-00672619〉
  • Cyril Buttay, Christophe Raynaud, Hervé Morel, Gabriel Civrac, Marie-Laure Locatelli, et al.. Thermal Requirements of SiC Power Devices. 6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France. 〈hal-00672631〉
  • Duy Minh Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, et al.. OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients. CSCRM, Sep 2011, Cleveland, United States. Proceedings of the 14th International Conference on Silicon Carbide and Related Materials, 2011. 〈hal-00747298〉
  • Mihai Lazar, François Jomard, Duy Minh Nguyen, Christophe Raynaud, Gontran Pâques, et al.. SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements. CSCRM, Sep 2011, Cleveland, United States. Trans Tech Publications Inc., Proceedings of the 14th International Conference on Silicon Carbide and Related Materials, 717-720, pp.885-888, 2012, MATERIALS SCIENCE FORUM. 〈10.4028/www.scientific.net/MSF.717-720.885〉. 〈hal-00747300〉
  • Duy Minh Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, et al.. Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection. CSCRM, Aug 2010, Oslo, Norway. Trans Tech Publications Inc., Proceedings of the 8th European Conference on Silicon Carbide and Related Materials, 679-680, pp.567-570, 2011, MATERIALS SCIENCE FORUM. 〈10.4028/www.scientific.net/MSF.679-680.567〉. 〈hal-00661470〉
  • Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Nicolas Dheilly, Hervé Morel, et al.. SiC Power Semiconductor Devices for new Applications in Power Electronics. 13th IEEE PEMC, Sep 2008, Poznan, Poland. Proceeding of the 13th IEEE International Power Electronics and Motion Control Conference, pp.2457 - 2463, 2008, 〈10.1109/EPEPEMC.2008.4635632〉. 〈hal-00373016〉
  • Dominique Bergogne, Hervé Morel, Dominique Tournier, Bruno Allard, Dominique Planson, et al.. Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters. 5th CIPS, Mar 2008, Nuremberg, Germany. Proceeding of the 5th International Conference on Integrated Power Electronics Systems, pp.08.2, 2008. 〈hal-00372982〉
  • Christophe Raynaud, Daniel Loup, Philippe Godignon, Raul Rodriguez, Dominique Tournier, et al.. OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes. CSCRM, Oct 2006, Newcastle upon Tyne, United Kingdom. Trans Tech Publications Inc., Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, 556-557, pp.1007-1010, 2007, MATERIALS SCIENCE FORUM. 〈10.4028/www.scientific.net/MSF.556-557.1007〉. 〈hal-00368922〉

Book sections1 document

  • Christophe Raynaud, Duy Minh Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, et al.. Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation. Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009. 〈hal-00661529〉