Nombre de documents

44

maître de conférences, INSA-Lyon


Article dans une revue24 documents

  • Gabriel Ferro, Selsabil Sejil, Mihai Lazar, D. Carole, C. Brylinski, et al.. Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions. physica status solidi (a), Wiley, 2017, 214 (4), 〈10.1002/pssa.201600454〉. 〈hal-01615190〉
  • Hassan Hamad, Dominique Planson, Christophe Raynaud, Pascal Bevilacqua. OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K. Semiconductor Science and Technology, IOP Publishing, 2017, 32 (5), pp.4001. 〈10.1088/1361-6641/aa641d〉. 〈hal-01626154〉
  • Hassan Hamad, Dominique Planson, Christophe Raynaud, Pascal Bevilacqua. OBIC Technique Applied to Wide Bandgap Semiconductors. Semiconductor Science and Technology, IOP Publishing, 2017, 32 (5), 〈10.1088/1361-6641/aa641d/meta〉. 〈hal-01865068〉
  • Cyril Buttay, Rémy Ouaida, Hervé Morel, Dominique Bergogne, Christophe Raynaud, et al.. Thermal Stability of Silicon Carbide Power JFETs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (12), pp.4191 - 4198. 〈10.1109/TED.2013.2287714〉. 〈hal-00881667〉
  • Rémy Ouaida, Cyril Buttay, Anh Dung Hoang, Raphaël Riva, Dominique Bergogne, et al.. Thermal Runaway Robustness of SiC VJFETs. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.929-933. 〈10.4028/www.scientific.net/MSF.740-742.929〉. 〈hal-00799884〉
  • Cyril Buttay, Christophe Raynaud, Hervé Morel, Gabriel Civrac, Marie-Laure Locatelli, et al.. Thermal stability of silicon-carbide power diodes. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59 (3), pp.761-769. 〈10.1109/TED.2011.2181390〉. 〈hal-00672440〉
  • Duy Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, et al.. OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.545-548. 〈10.4028/www.scientific.net/MSF.717-720.545〉. 〈hal-00803059〉
  • Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. Advanced Materials Research, Trans Tech Publications, 2011, Advances in Innovative Materials and Applications, pp.46-51. 〈10.4028/www.scientific.net/AMR.324.46〉. 〈hal-00799902〉
  • Duy Nguyen, Christophe Raynaud, Nicolas Dheilly, Mihai Lazar, Dominique Tournier, et al.. Experimental determination of impact ionization coefficients in 4H-SiC. Diamond and Related Materials, Elsevier, 2011, 20 (3), pp.395-397. 〈10.1016/j.diamond.2011.01.039〉. 〈hal-00661429〉
  • Nicolas Dheilly, Gontran Pâques, Sigo Scharnholz, Pascal Bevilacqua, Christophe Raynaud, et al.. Optical triggering of SiC thyristors using UV LEDs. Electronics Letters, IET, 2011, 47 (7), pp.459 - 460. 〈10.1049/el.2010.7041〉. 〈hal-00661435〉
  • Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of high temperature power electronics. Materials Science and Engineering: B, Elsevier, 2011, 176 (4), pp.283-288. 〈10.1016/j.mseb.2010.10.003〉. 〈hal-00597432〉
  • Christophe Raynaud, Dominique Tournier, Hervé Morel, Dominique Planson. Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices. Diamond and Related Materials, Elsevier, 2010, 19 (1), pp.1-6. 〈10.1016/j.diamond.2009.09.015〉. 〈hal-00476195〉
  • Christophe Raynaud, Duy Nguyen, Pierre Brosselard, Amador Pérez-Tomás, Dominique Planson, et al.. Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses. Materials Science Forum, Trans Tech Publications Inc., 2009, 615-617, pp.671-674. 〈10.4028/www.scientific.net/MSF.615-617.671〉. 〈hal-00391462〉
  • Tarek Ben Salah, Damien Risaletto, Christophe Raynaud, Kamel Besbes, Dominique Bergogne, et al.. Determination of ambipolar lifetime and epilayer thickness of 5kV SiC bipolar devices by transient switching studies. Materials Science Forum, Trans Tech Publications Inc., 2008, 600-603, pp.1031-1034. 〈10.4028/www.scientific.net/MSF.600-603.1031〉. 〈hal-00391482〉
  • Christophe Raynaud, Karine Isoird, Mihai Lazar, Cm Johnson, N. Wright. Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements. Journal of Applied Physics, American Institute of Physics, 2002, 91 (12), pp.9841-9847. 〈hal-00141477〉
  • S. Croci, C. Plossu, B. Balland, Christophe Raynaud, Pierre Boivin. Effect of some technological parameters on Fowler-Nordheim injection through tunnel oxides for non-volatile memories. Journal of Non-Crystalline Solids, Elsevier, 2001, 280 (1-3), pp.202-210. 〈hal-00141506〉
  • Christophe Raynaud. Silica films on silicon carbide: a review of electrical properties and device applications. Journal of Non-Crystalline Solids, Elsevier, 2001, 280 (1-3), pp.1-31. 〈hal-00141505〉
  • J. Autran, P. Masson, N. Freud, Christophe Raynaud, C. Riekel. Micro-irradiation experiments in MOS transistors using synchrotron radiation. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2000, 47 (3 Part 1), pp.574-579. 〈hal-00141515〉
  • Christophe Raynaud. Calculation of theoretical capacitance-voltage characteristics of 6H-SiC metal-oxide-semiconductor structures. Journal of Applied Physics, American Institute of Physics, 2000, 88 (1), pp.424-428. 〈hal-00141518〉
  • K. Ghaffour, V. Lauer, A. Souifi, G. Guillot, Christophe Raynaud, et al.. Characterisation of deep level trap centres in 6H-SiC p-n junction diodes. Materials Science and Engineering: B, Elsevier, 1999, 66 (1-3), pp.106-110. 〈hal-00141523〉
  • Christophe Raynaud, K. Ghaffour, S. Ortolland, Marie-Laure Locatelli, K. Souifi, et al.. Electrical characterization of silicon carbide n(+)pp(+) diodes with an N-implanted n(+) emitter. Journal of Applied Physics, American Institute of Physics, 1998, 84 (6), pp.3073-3077. 〈hal-00141570〉
  • S. Ortolland, Christophe Raynaud, Marie-Laure Locatelli, Jean-Pierre Chante, A. Senes. Surface effects on current mechanisms in 6H-SiC n(+)pp(+) structures passivated with a deposited oxide. Journal of Applied Physics, American Institute of Physics, 1998, 84 (3), pp.1688-1692. 〈hal-00141583〉
  • A. Lebedev, S. Ortolland, Christophe Raynaud, Marie-Laure Locatelli, Dominique Planson, et al.. Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures. Semiconductors, 1997, 31 (7), pp.735-737. 〈hal-00141601〉
  • S. Ortolland, Christophe Raynaud, Jean-Pierre Chante, A. Lebedev, A. Andreev, et al.. Effect of boron diffusion on the high-voltage behavior of 6H-SiC p(+)nn(+) structures. Journal of Applied Physics, American Institute of Physics, 1996, 80 (9), pp.5464-5468. 〈hal-00141621〉

Communication dans un congrès19 documents

  • Teng Zhang, Christophe Raynaud, Dominique Planson. Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode. ECSCRM, Sep 2018, Birmingham, United Kingdom. pp.MO.P.FP6, 2019, Silicon Carbide and Related Materials 2018. 〈https://warwick.ac.uk/fac/sci/eng/ecscrm2018/home/〉. 〈hal-01947814〉
  • Jean-François Mogniotte, Mihai Lazar, Christophe Raynaud, Bruno Allard. First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments. CAS, Oct 2017, Sinaia, Romania. Proc. of the IEEE International Semiconductor Conference. 〈10.1109/SMICND.2017.8101191〉. 〈hal-01646319〉
  • Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Dominique Planson. Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method. CAS, Oct 2015, Sinaia, Romania. Proc. of International Semiconductor Conference, 2015, 〈http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6966365〉. 〈10.1109/SMICND.2015.7355226〉. 〈hal-01388024〉
  • Mihai Lazar, Davy Carole, Christophe Raynaud, Selsabil Sejil, Farah Laariedh, et al.. Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices. CAS, Oct 2015, Sinaia, Romania. Proc. of International Semiconductor Conference, pp.145 - 148, 2015, 〈http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6966365〉. 〈10.1109/SMICND.2015.7355190 〉. 〈hal-01388019〉
  • Hassan Hamad, Pascal Bevilacqua, Christophe Raynaud, Dominique Planson. Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes. PRIME, Jun 2014, Grenoble, France. Proc. of the 10th Conference on Ph.D. Research in Microelectronics and Electronics 〈10.1109/PRIME.2014.6872761〉. 〈hal-01388043〉
  • Dominique Planson, Pierre Brosselard, Karine Isoird, Mihai Lazar, Luong Viêt Phung, et al.. Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects. CAS 2014 (semiconductor conference 2014), Oct 2014, Sinaia, Romania. IEEE, Semiconductor Conference (CAS), 2014 International, pp.35 - 40 2014, 〈http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6966365〉. 〈10.1109/SMICND.2014.6966383〉. 〈hal-01388002〉
  • Hassan Hamad, Pascal Bevilacqua, Dominique Planson, Christophe Raynaud, Dominique Tournier, et al.. Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC. Symposium de Génie Électrique 2014, Jul 2014, Cachan, France. 〈hal-01065307〉
  • Rémy Ouaida, Cyril Buttay, Raphaël Riva, Dominique Bergogne, Christophe Raynaud, et al.. Thermal stability of SiC JFETs in conduction mode. EPE'13-ECCE Europe, Sep 2013, Lille, France. Proceedings of the 15th European Conference on Power Electronics and Applications, paper 223, 2013. 〈hal-00874471〉
  • Rémy Ouaida, Cyril Buttay, Anh Dung Hoang, Raphaël Riva, Dominique Bergogne, et al.. Thermal Runaway Robustness of SiC VJFETs. ECSCRM, Sep 2012, St Petersburg, Russia. 2p, 2012. 〈hal-00759975v2〉
  • Mihai Lazar, François Jomard, Duy Nguyen, Christophe Raynaud, Gontran Pâques, et al.. SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements. ICSCRM, Sep 2011, Cleveland, United States. 717-720, pp.885-888, 2012, 〈10.4028/www.scientific.net/MSF.717-720.885〉. 〈hal-00803060〉
  • Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. CIMA, Mar 2011, Beirut, Lebanon. Advances in Innovative Materials and Applications, pp.CD, 2011. 〈hal-00661500〉
  • Cyril Buttay, Christophe Raynaud, Hervé Morel, Gabriel Civrac, Marie-Laure Locatelli, et al.. Thermal Requirements of SiC Power Devices. 6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France. 〈hal-00672631〉
  • Duy Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, et al.. OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients. ICSCRM, Sep 2011, Cleveland, United States. 717-720, pp.545-548, 2012, 〈10.4028/www.scientific.net/MSF.717-720.545〉. 〈hal-00747298〉
  • Cyril Buttay, Amandine Masson, Jianfeng Li, Mark Johnson, Mihai Lazar, et al.. Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization. IMAPS. High Temperature Electronics Network (HiTEN), Jul 2011, Oxford, United Kingdom. pp.1-7, 2011. 〈hal-00672619〉
  • Mihai Lazar, François Jomard, Duy Nguyen, Christophe Raynaud, Gontran Pâques, et al.. SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements. ICSCRM, Sep 2011, Cleveland, United States. 717-720, pp.885-888, 2012, 〈10.4028/www.scientific.net/MSF.717-720.885〉. 〈hal-00747300〉
  • Duy Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, et al.. Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection. ECSCRM, Aug 2010, Oslo, Norway. 679-680, pp.567-570, 2011, 〈10.4028/www.scientific.net/MSF.679-680.567〉. 〈hal-00661470〉
  • Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Nicolas Dheilly, Hervé Morel, et al.. SiC Power Semiconductor Devices for new Applications in Power Electronics. IEEE/EPE-PEMC, Sep 2008, Poznan, Poland. Proceeding of th 13th International Power Electronics and Motion Control Conference, pp.2457 - 2463, 2008, 〈10.1109/EPEPEMC.2008.4635632〉. 〈hal-00373016〉
  • Dominique Bergogne, Hervé Morel, Dominique Tournier, Bruno Allard, Dominique Planson, et al.. Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters. CIPS, Mar 2008, Nuremberg, Germany. Proceeding of the 5th International Conference on Integrated Power Electronics Systems, pp.08.2, 2008. 〈hal-00372982〉
  • Christophe Raynaud, Daniel Loup, Philippe Godignon, Raul Rodriguez, Dominique Tournier, et al.. OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes. ECSCRM, Oct 2006, Newcastle upon Tyne, United Kingdom. 556-557, pp.1007-1010, 2007, 〈10.4028/www.scientific.net/MSF.556-557.1007〉. 〈hal-00368922〉

Chapitre d'ouvrage1 document

  • Christophe Raynaud, Duy Nguyen, Nicolas Dheilly, Dominique Tournier, Pierre Brosselard, et al.. Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation. Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009. 〈hal-00661529〉