Nombre de documents

145

CV de christophe longeaud


Article dans une revue67 documents

  • Raphaël Lachaume, Christophe Longeaud, Jean-Paul Kleider. New insight into the modulated photocurrent technique using 2D full numerical simulations. physica status solidi (a), Wiley, 2016, 213 (7), pp.1848 - 1855. <10.1002/pssa.201532969>. <hal-01297095>
  • Christophe Longeaud, Amir Fath Allah, Javier Schmidt, Mustapha El Yaakoubi, Solenn Berson, et al.. Determination of diffusion lengths in organic semiconductors: Correlation with solar cell performances. Organic Electronics, Elsevier, 2016, 31, pp.253-257. <10.1016/j.orgel.2016.01.043>. <hal-01288220>
  • P. Genevee, A. Darga, C. Longeaud, D. Lincot, F. Donsanti. Atomic layer deposition of ZnInxSy buffer layers for Cu(In,Ga)Se2 solar cells. Journal of Renewable and Sustainable Energy, AIP Publishing, 2015, 7 (1), pp.013116. <http://scitation.aip.org/content/aip/journal/jrse>. <10.1063/1.4906912>. <hal-01253407>
  • Sofia Gaiaschi, Marie-Estelle Farret-Gueunier, Christophe Longeaud, Eric Johnson. Electrical properties of hydrogenated microcrystalline silicon carbon alloys: effect of deposition parameters and light soaking. Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48, pp.285101. <10.1088/0022-3727/48/28/285101>. <hal-01274543>
  • T. Mambrini, Anne Migan-Dubois, C. Longeaud, J. Badosa, M. Haeffelin, et al.. Photovoltaic yield correction method for mismatch of the solar spectrum and the reference ASTMG AM1.5G spectrum. EPJ Photovoltaics, EDP sciences, 2015, 6, pp.60701. <10.1051/epjpv/2014011>. <hal-01242745>
  • Thomas Mambrini, Anne Migan-Dubois, Christophe Longeaud, Mustapha Elyaakoubi. Outdoor characterization of amorphous silicon based photovoltaic modules with different structures. physica status solidi (c), Wiley, 2014, 11 (11-12), pp.1711-1713. <10.1002/pssc.201400048>. <hal-01099375>
  • Jennifer Luckas, A. Olk, P. Jost, J. Alvarez, A. Jaffré, et al.. Impact of Maxwell rigidity transitions on resistance drift phenomena in GexTe12x glasses. Applied Physics Letters, American Institute of Physics, 2014, 105, pp.092108. <10.1063/1.4893743>. <hal-01061812>
  • Jennifer Luckas, Christophe Longeaud, Susanne Siebentritt. Modulated photocurrent experiments-comparison of different data treatments. Journal of Applied Physics, American Institute of Physics, 2014, 116 (10), pp.103710. <10.1063/1.4894248>. <hal-01099564>
  • Jennifer Luckas, Christophe Longeaud, Tobias Bertram, Susanne Siebentritt. Metastable defect in CuInSe2 probed by modulated photo current experiments above 390 K. Japanese Journal of Applied Physics, part 2 : Letters, 2014, 104 (15), pp.153905. <10.1063/1.4871666>. <hal-01099568>
  • S. Gaiaschi, R. Ruggeri, E.V. Johnson, P. Bulkin, P. Chapon, et al.. Structural properties of hydrogenated microcrystalline silicon–carbon alloys deposited by Radio Frequency Plasma Enhanced Chemical Vapor Deposition: Effect of microcrystalline silicon seed layer and methane flow rate. Thin Solid Films, Elsevier, 2014, 550, pp.312-318. <10.1016/j.tsf.2013.11.081>. <hal-01099597>
  • Jennifer Luckas, Andrea Piarristeguy, G. Bruns, P. Jost, R.M. Schmidt, et al.. Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys. Journal of Applied Physics, American Institute of Physics, 2013, 113, pp.023704-7. <10.1063/1.4769871>. <hal-00775944>
  • Pratish Mahtani, Renaud Varache, Bastien Jovet, Christophe Longeaud, Jean-Paul Kleider, et al.. Light induced changes in the amorphous - crystalline silicon heterointerface. Journal of Applied Physics, American Institute of Physics, 2013, 114 (12), pp.124503 - 124503-10. <10.1063/1.4821235>. <hal-00931270>
  • Arouna Darga, Denis Mencaraglia, Christophe Longeaud, Tom Savenjije, Brian Oregan, et al.. On Charge Carrier Recombination in Sb2S3 and Its Implication for the Performance of Solar Cells. The Journal of Physical Chemistry C, ACS American Chemical Society - Publications, 2013, 117 (40), pp.20525-20530. <10.1021/jp4072394>. <hal-00931271>
  • Jennifer Luckas, Daniel Krebs, S. Grothe, J. Klomfass, R. Carius, et al.. Defect in amorphous phase change materials. Journal of Materials Research, Cambridge University Press (CUP), 2013, 28 (9), pp.1139-1147. <10.1557/jmr.2013.72>. <hal-00931273>
  • Christophe Longeaud. An automated steady state photocarrier grating experiment. Review of Scientific Instruments, American Institute of Physics, 2013, 84 (5), pp.055101. <10.1063/1.4803006>. <hal-00931272>
  • Christophe Longeaud, Jennifer Luckas, Daniel Krebs, R. Carius, J. Klomfass, et al.. On the density of states of germanium telluride. Journal of Applied Physics, American Institute of Physics, 2012, 112 (11), 113714 (8p.). <10.1063/1.4768725>. <hal-00778964>
  • Federico Ventosinos, Christophe Longeaud, J. A. Schmidt. Density of states evaluations from oscillating/moving grating techniques. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2031-2034. <10.1016/j.jnoncrysol.2011.12.046>. <hal-00778956>
  • Christophe Longeaud, Federico Ventosinos, J. A. Schmidt. Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques. Journal of Applied Physics, American Institute of Physics, 2012, 112 (2), 023709 (10p.). <10.1063/1.4737790>. <hal-00778957>
  • Christophe Longeaud, Jennifer Luckas, Matthias Wuttig. Some results on the Germanium telluride density of states. Journal of Physics: Conference Series, IOP Publishing, 2012, 398 (1), pp.012007. <10.1088/1742-6596/398/1/012007>. <hal-00778963>
  • K. Christova, S. Alexandrova, A. Abramov, E. Valcheva, B. Ranguelov, et al.. Stress characterization of thin microcrystalline silicon films. International Review of Physics, 2012, 6 (1), pp.106. <hal-00778965>
  • Christophe Longeaud, J. A. Schmidt. a-Si:H transport parameters from experiments based on photoconductivity. Journal of Non-Crystalline Solids, Elsevier, 2012, 358 (17), pp.2052-2056. <10.1016/j.jnoncrysol.2011.11.018>. <hal-00781747>
  • A.G. Benvenuto, R.H. Buitrago, Ayana Badhuri, Christophe Longeaud, J. A. Schmidt. Characterization of thin polycrystalline silicon films deposited on glass by CVD. Semiconductor Science and Technology, IOP Publishing, 2012, 27 (12), pp.125013. <10.1088/0268-1242/27/12/125013>. <hal-00778962>
  • Vanessa Gorge, Zakaria Djebbour, Anne Migan-Dubois, Christelle Pareige, Christophe Longeaud, et al.. Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films. Applied Physics Letters, American Institute of Physics, 2011, 99 (6), 062113 (3 p.). <10.1063/1.3624598>. <hal-00710730>
  • Federico Ventosinos, Nicolas Budini, Christophe Longeaud, Julien Schmidt. Analysis of the oscillating photocarrier grating technique. Journal of Physics D: Applied Physics, IOP Publishing, 2011, 44 (29), pp.295103. <10.1088/0022-3727/44/29/295103>. <hal-00710729>
  • Jennifer Luckas, Stephan Kremers, Daniel Krebs, Martin Salinga, Matthias Wuttig, et al.. The influence of a temperature dependent band gap on the energy scale of modulated photocurrent experiments. Journal of Applied Physics, American Institute of Physics, 2011, 110 (1), 013719 (11 p.). <10.1063/1.3605517>. <hal-00710739>
  • V. Gorge, Z. Djebbour, A. Mignan-Dubois, C. Pareige, C. Longeaud, et al.. Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1-xN thin films. Applied Physics Letters, American Institute of Physics, 2011, 99 (6), pp.062113. <hal-00648361>
  • Jaime Frejlich, Christophe Longeaud, Jesiel F Carvalho. Photoinduced Schottky Barrier in Photorefractive Materials. Physical Review Letters, American Physical Society, 2010, 104, pp.116601. <hal-00555236>
  • Julien Schmidt, Nicolas Budini, Federico Ventosinos, Christophe Longeaud. Theoretical analysis and experimental results on the modulated photocarrier grating technique. physica status solidi (a), Wiley, 2010, 207 (3), pp.556-560. <hal-00555234>
  • Jennifer Luckas, Daniel Krebs, Martin Salinga, Matthias Wuttig, Christophe Longeaud. Investigation of defect states in the amorphous phase of phase change alloys GeTe and Ge2Sb2Te5. physica status solidi (c), Wiley, 2010, 7 (3), pp.852-856. <hal-00555235>
  • Ayana Badhuri, P. Chaudhuri, S. Vignoli, Christophe Longeaud. Correlation of structural inhomogeneities with transport properties in amorphous silicon germanium alloy thin films. Solar Energy Materials and Solar Cells, Elsevier, 2010, 94 (9), pp.1492-1495. <hal-00555237>
  • Christophe Longeaud, S. Tobbeche. The influence of hopping on modulated photoconductivity. Journal of Physics: Condensed Matter, IOP Publishing, 2009, 21, p. 045508. <hal-00445956>
  • Christophe Longeaud, Jean-Paul Kleider, P. Kaminski, R. Kozlowski, M. Miczuga. Characterization of defect levels in semi−insulating 6H−SiC by means of photoinduced transient spectroscopyand modulated photocurrent technique. Journal of Physics: Condensed Matter, IOP Publishing, 2009, 21, pp. 045801-045815. <hal-00445958>
  • M. Suproniuk, P. Kaminski, M. Miczuga, M. Pawlowski, R. Kozlowski, et al.. An intelligent measurement system for diagnosing of semi-insulating materials by photoinduced transient spectroscopy. Przeglad Elektrotechniczny, 2009, pp.93-98. <hal-00763193>
  • Christophe Longeaud, Julien Schmidt, R.R. Koropecki, Jean-Paul Kleider. Determination of hydrogenated amorphous silicon density of states parameters from photoconductivity measurements. Journal of Optoelectronics and Advanced Materials, 2009, 11 (9), pp.1064-1071. <hal-00763198>
  • Christophe Longeaud, C. Main. Deconvolution of the transient photocurrent signals : application to the study of the density of states of a BTO crystal. Journal of Physics: Condensed Matter, IOP Publishing, 2008, 20, pp.135217. <hal-00350721>
  • Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Device grade hydrogenated polymorphous silicon deposited at high rates. Journal of Non-Crystalline Solids, Elsevier, 2008, 354, pp.2092. <hal-00350767>
  • A. Bhaduri, P. Chaudhuri, D.L. Williamson, S. Vignoli, P.P. Ray, et al.. Structural and optoelectronic properties of SiGe alloy thin films deposited by pulsed RF plasma CVD. Journal of Applied Physics, American Institute of Physics, 2008, 104, pp.063709. <hal-00350895>
  • P. Chaudhuri, A. Bhaduri, A. Bandyopadhyay, S. Vignoli, P.P. Ray, et al.. High diffusion length silicon germanium alloy thin films deposited by pulsed rf PECVD method. Journal of Non-Crystalline Solids, Elsevier, 2008, 354, pp.2105. <hal-00350868>
  • J.A. Schmidt, Christophe Longeaud, R.R. Koropecki, R. Arce, Jean-Paul Kleider. Modulated photoconductivity in the high and low frequency regimes. Journal of Non-Crystalline Solids, Elsevier, 2008, 354, pp.2914. <hal-00350791>
  • Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Polymorphous silicon thin films deposited at high rate: transport properties and density of states. Thin Solid Films, Elsevier, 2008, 516, pp.6888. <hal-00350886>
  • P. Leempoel, P. Descamps, T. Kervyn de Meerendré, J. Charliac, Pere Roca I Cabarrocas, et al.. Distributed Electron Cyclotron Resonance plasma: a technology for large area deposition of device quality a-Si:H at very high rate. Thin Solid Films, Elsevier, 2008, 516, pp.6853. <hal-00350890>
  • J. Frejlich, R. Montenegro, N.R. Inocente-Junior, P.V. Dos Santos, J.C. Launay, et al.. Phenomenological characterization of photoactive centers in Bi12TiO20 crystals. Journal of Applied Physics, American Institute of Physics, 2007, 101, pp.043101. <hal-00322084>
  • N. Dutta Gupta, Christophe Longeaud, Cyril Bazin, S. Vignoli, V. Paillard, et al.. Deposition of ultra violet photoconductive films of hydrogenated amorphous carbon. Journal of Applied Physics, American Institute of Physics, 2007, 101, pp.103703. <hal-00322089>
  • J.A. Schmidt, Christophe Longeaud, R.R. Koropecki, R. Arce. Low frequency modulated photoconductivity in semiconductors having multiple species of traps. Journal of Applied Physics, American Institute of Physics, 2007, 101, pp.103705. <hal-00322090>
  • Christophe Longeaud, H. Belgacem, C. Douay. Density of states in Bi12TiO20 from time of flight measurements. Journal of Physics: Condensed Matter, IOP Publishing, 2007, 19, pp.476202. <hal-00322093>
  • Jaime Frejlich, Renata Montenegro, Nilson R. Inocente-Junior, Pedro V. Dos Santos, Jean-Claude Launay, et al.. Phenomenological characterization of photoactive centers in Bi12TiO20 crystals. Journal of Applied Physics, American Institute of Physics, 2007, 101 (4), pp.043101. <10.1063/1.2434009>. <hal-00133018>
  • T.H. Dao, Marie-Estelle Gueunier-Farret, D. Daineka, P. Bulkin, Pere Roca I Cabarrocas, et al.. Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by ECR. Thin Solid Films, Elsevier, 2007, 515, pp.7650-7653. <hal-00322079>
  • Marie-Estelle Gueunier-Farret, Cyril Bazin, Jean-Paul Kleider, Christophe Longeaud, P. Bulkin, et al.. Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1913-1916. <hal-00321731>
  • J.A. Schmidt, Christophe Longeaud, R.R. Koropecki, Jean-Paul Kleider. Parameters of the density of states in the gap of defective semiconductors determined from photoconductivity measurements. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1024-1027. <hal-00321725>
  • Namita Dutta Gupta, Christophe Longeaud, P. Chaudhuri, A. Bhaduri, S. Vignoli. Some Properties of amorphous carbon films deposited on the grounded electrode of a RF-PECVD reactor from Ar-CH4 mixtures. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1307-1309. <hal-00321726>
  • S. Vignoli, P. Chaudhuri, A. Bhaduri, Namita Dutta Gupta, Christophe Longeaud. Hydrogenated amorphous silicon-carbon alloys obtained from Ar-SiH4 – CH4 gas mixtures : structural and transport properties. Journal of Non-Crystalline Solids, Elsevier, 2006, 352, pp.1384-1387. <hal-00321727>
  • Christophe Longeaud, J.A. Schmidt, R.R. Koropecki. Determination of semiconductors band gap states parameters from photoconductivity measurements: II- Experimental results. Physical Review B : Condensed matter and materials physics, American Physical Society, 2006, 73, pp.235317. <hal-00321724>
  • Christophe Longeaud, J.A. Schmidt, Jean-Paul Kleider. Determination of semiconductors band gap states parameters from photoconductivity measurements: I- Theoretical developments. Physical Review B : Condensed matter and materials physics, American Physical Society, 2006, 73, pp.235316. <hal-00321720>
  • S. Vignoli, P. Mélinon, B. Masenelli, Pere Roca I Cabarrocas, A.M. Flank, et al.. Over-coordination and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic properties. Journal of Physics: Condensed Matter, IOP Publishing, 2005, 17, pp.1279-1288. <hal-00321238>
  • P. Chaudhuri, Namita Dutta Gupta, A. Bhaduri, Christophe Longeaud, S. Vignoli, et al.. Study of powders formed at low power in a silane-argon discharge and their effect on the properties of hydrogenated amorphous silicon thin films. Journal of Applied Physics, American Institute of Physics, 2005, 98, pp.44913. <hal-00321244>
  • J.A. Schmidt, Christophe Longeaud, Jean-Paul Kleider. Light-intensity dependence of the steady state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors. Thin Solid Films, Elsevier, 2005, 493, pp.319-324. <hal-00321248>
  • J.A. Schmidt, Christophe Longeaud. Analysis of the steady states photocarrier grating method for the determination of the density of states in semiconductors. Physical Review B : Condensed matter and materials physics, American Physical Society, 2005, 71, pp.125208. <hal-00321240>
  • H. Belgacem, A. Merazga, Christophe Longeaud. Determination of defect levels parameters in semiinsulating GaAs:Cr from transient photocurrent experiment. Semiconductor Science and Technology, IOP Publishing, 2005, 20, pp.56-61. <hal-00321234>
  • J.A. Schmidt, Christophe Longeaud. Density of states determination from steady state photocarrier grating measurements. Applied Physics Letters, American Institute of Physics, 2004, 85, pp.4412. <hal-00320885>
  • Jean-Paul Kleider, Christophe Longeaud, Marie-Estelle Gueunier. The modulated photocurrent technique: a powerful tool to investigate band gap states in silicon based thin films. Phys. stat. sol., 2004, 1, pp.1208-1226. <hal-00321029>
  • Marie-Estelle Gueunier, Christophe Longeaud, Jean-Paul Kleider. Modulated photocurrent in the recombination regime. European Physical Journal: Applied Physics, EDP Sciences, 2004, 26, pp.75-85. <hal-00320883>
  • P. Chaudhuri, D. Das, P.P. Ray, Namita Dutta Gupta, Dhananjoy Roy, et al.. Correlation between plasma chemistry, microstructure and electronic properties of Si:H thin films prepared by hydrogen dilution. Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.236. <hal-00321015>
  • P. Chaudhuri, R. Meaudre, Christophe Longeaud. Argon dilution of silane as an alternative to hydrogen dilution for stable and high efficiency silicon thin film solar cells. Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.690. <hal-00321017>
  • Jean-Paul Kleider, Christophe Longeaud, Marie-Estelle Gueunier. Investigation of bandgap states using the modulated photocurrent technique in both low and high frequency regimes. Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.390-399. <hal-00320874>
  • David Verstraeten, Christophe Longeaud, A. Ben Mahmoud, H. J. Von Bardeleben, Jean-Claude Launay, et al.. A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride : the case of the tellurium antisite. Semiconductor Science and Technolgoy, 2003, 18 (11), pp.919-926. <10.1088/0268-1242/18/11/303>. <hal-00182645>
  • Pere Roca I Cabarrocas, Z. Djebbour, J. Kleider, C. Longeaud, D. Mencaraglia, et al.. Hydrogen, microstructure and defect density in hydrogenated amorphous silicon. Journal de Physique I, EDP Sciences, 1992, 2 (10), pp.1979-1998. <10.1051/jp1:1992260>. <jpa-00246677>
  • J. Peyre, J. Baixeras, D. Mencaraglia, P. Andro, C. Longeaud. ELECTRON DRIFT MOBILITY MEASUREMENT IN UNDOPED TRIODE DC SPUTTERED a-Si : H. Journal de Physique Colloques, 1981, 42 (C4), pp.C4-163-C4-166. <10.1051/jphyscol:1981433>. <jpa-00220889>

Poster8 documents

  • M. El Yaakoubi, J. Méot, E. Stephanos, C. Longeaud. Novel apparatus for electronic transport measurement of semiconductor thin films : minority carriers diffusion length and photoconductivity. Journées Nationales du Photovoltaïque 2015, Dec 2015, Dourdan, France. <hal-01245738>
  • N. Puspitosari, S. Gaiaschi, C. Longeaud, M.E. Gueunier, E. V. Johnson. Density of states measurements of RF-power, SiF4 and CH4 –tuned-hydrogenated microcrystalline silicon carbon alloy thin films using Fourier transform photocurrent spectroscopy (FTPS). Journées Nationales du Photovoltaïque 2015, Dec 2015, Dourdan, France. <hal-01245742>
  • Raphaël Lachaume, Christophe Longeaud, Jean-Paul Kleider. New insights into the modulated photocurrent technique using 2D full numerical simulations. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. <hal-01238538>
  • Thomas Mambrini, Anne Migan-Dubois, Christophe Longeaud, Jordi Badosa, Martial Haeffelin. Solar spectrum measurements during 6 month: spectral mismatch induced on crystalline silicon and amorphous silicon photovoltaic cells. European Photovoltaic Solar Energy Conference (Eu-PVSEC 2015), Sep 2015, Hamburg, Germany. 2015, <http://www.eupvsec-planner.com/index.html>. <hal-01239560>
  • A. Fath Allah, C. Longeaud, J. Schmidt, M. El Yaakoubi, S. Berson, et al.. Some transport properties of P3HT:PCBM thin films. 26th International conference on amorphous and nanocrystalline semiconductors (ICANS 26), Sep 2015, Aix la chapelle, Germany. <hal-01242772>
  • N. Puspitosari, S. Gaiaschi, C. Longeaud, M. E. Gueunier, E. V. Johnson. Density of states measurements of RF-power, SiF4 and CH4 –tuned-hydrogenated microcrystalline silicon carbon alloy thin films using Fourier transform photocurrent spectroscopy (FTPS). European Photovoltaïc Solar Energy Conference, Sep 2015, Hambourg, Germany. Proceedings of the European Photovoltaïc Solar Energy Conference. <hal-01242764>
  • Perrine Dutheil, Anne-Lise Thomann, Amaël Caillard, Julien Roussel, Mustapha Elyaakoubi, et al.. Performances Enhancement of Thin Film a-Si:H Photovoltaic Devices by incorporating Ag Nanoparticles (Ag NPs). 4th International Symposium on Energy Challenges and Mechanics-work on small scales 2015, Aug 2015, Aberdeen, United Kingdom. <hal-01290684>
  • Thomas Mambrini, Anne Migan-Dubois, Christophe Longeaud, L. Prieur, V. Radivoniuk. Étude du faible éclairement sur le productible de modules photovoltaïques de différentes technologies : modélisation versus caractérisation en extérieur. JNPV 2014, Dec 2014, Dourdan, France. Actes des Journées Nationales du PhotoVoltaïque. <hal-01099346>

Communication dans un congrès67 documents

  • Junkang Wang, Federico Ventosinos, Christophe Longeaud, Bastien Bruneau, D. Daineka, et al.. Study of Electronic Properties of Hydrogenated Amorphous Silicon Thin Film from SiH4/H2 using Tailored Voltage Waveforms. E-MRS 2016 Spring Meeting, May 2016, Lille, France. <hal-01363727>
  • Arouna Darga, Denis Mencaraglia, Christophe Longeaud. Investigation of recombination mechanisms in thin semiconductors films using complementary photocurrent techniques. Multiscale optoelectronics conference, Nov 2015, Valencia, Spain. <http://multiscale-valencia.eu/index.php>. <hal-01253401>
  • C. Longeaud, E. Coppola, M. El Yaakoubi. Système de mesure de réponse spectral grande surface. Journées Nationales du Photovoltaïque 2015, Dec 2015, Dourdan, France. <hal-01245728>
  • Raphaël Lachaume, Christophe Longeaud, Jean-Paul Kleider. New insights into the modulated photocurrent technique using 2D full numerical simulations. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. <hal-01232105>
  • Raphaël Lachaume, Christophe Longeaud, Jean-Paul Kleider. New insights into the modulated photocurrent technique using 2D full numerical simulations. COST Multiscale solar Workshop 2015, Nov 2015, Valencia, Spain. <hal-01238544>
  • Thomas Mambrini, Anne Migan-Dubois, Christophe Longeaud. Outdoor characterization of amorphous silicon based photovoltaic modules: comparison of five different module structure. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014. <hal-01099366>
  • Thomas Mambrini, Anne Migan-Dubois, Christophe Longeaud, L. Prieur, V. Radivoniuk. Outdoor characterization of PV modules for estimating PV producible. EU PVSEC 2014, Sep 2014, Amsterdam, Netherlands. Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition. <hal-01099368>
  • Thomas Mambrini, Anne Migan-Dubois, Christophe Longeaud, L. Prieur, V. Radivoniuk. Outdoor characterizations to evaluate the low-light effect on photovoltaic modules yield. IEEE PVSC 2014, Jun 2014, Denver, United States. Proceedings of the 40th IEEE Photovoltaic Specialists Conference, pp.1358 - 1361, <10.1109/PVSC.2014.6925170>. <hal-01099372>
  • Arouna Darga, F. Sorin, Christophe Longeaud, Y. Berdnikov, E. Sondergard, et al.. Electronic transport properties of Cu2ZnSn(S,Se)4 thin films obtained from Lift-off process. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014, 2014. <hal-01099377>
  • Amir Fath-Allah, Federico Ventosinos, Christophe Longeaud. An automated experiment for determination of thin film semiconductor transport parameters. 18th International School on Condensed Matter Physics, Sep 2014, Varna, Bulgaria. Journal of Physics: Conference Series, 558, pp.012011, 2014, <10.1088/1742-6596/558/1/012011>. <hal-01099562>
  • Sofia Gaiaschi, E.V. Johnson, Marie-Estelle Gueunier-Farret, Christophe Longeaud, P. Chapon, et al.. Low temperature hydrogenated microcrystalline silicon-carbon alloys deposited by RF-PECVD for photovoltaic application. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014. <hal-01099573>
  • Sofia Gaiaschi, Marie-Estelle Gueunier-Farret, Christophe Longeaud, E.V. Johnson, P. Chapon, et al.. Structural and electrical properties of hydrogenated microcrystalline silicon-carbon alloys deposited at low substrate temperature by RF-PECVD. E-MRS Spring Meeting 2014, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting 2014, 2014. <hal-01099579>
  • Pratish Mahtani, Bastien Jovet, Nazir P. Kherani, Renaud Varache, Christophe Longeaud, et al.. Metastability of the amorphous-crystalline silicon heterointerface. EU PVSEC 2014, Sep 2014, Amsterdam, Netherlands. Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, 2014. <hal-01099581>
  • Sofia Gaiaschi, R. Ruggeri, E.V. Johnson, Pavel Bulkin, Marie-Estelle Gueunier-Farret, et al.. Structural and electrical characterization of microcrystalline silicon-carbon alloys deposited by RF-PECVD. E-MRS Spring Meeting 2013, May 2013, Strasbourg, France. 2013. <hal-00931313>
  • Thomas Mambrini, Anne Migan-Dubois, Christophe Longeaud. Objectifs de la caractérisation de panneaux photovoltaïques en exterieur. Journées Junior FédEsol, Dec 2013, Dourdan, France. 2013. <hal-00931332>
  • Sofia Gaiaschi, E.V. Johnson, Marie-Estelle Gueunier-Farret, Christophe Longeaud, Pavel Bulkin, et al.. µc-Si1-xCx:H deposited by RF-PECVD: a novel material for PV applications. E-MRS Fall Meeting 2013, Sep 2013, Warsaw, Poland. 2013. <hal-00931311>
  • Sofia Gaiaschi, R. Ruggeri, E.V. Johnson, Marie-Estelle Gueunier-Farret, Christophe Longeaud, et al.. Tailored Voltage deposition of µc-Si1-xCx:H from H2 diluted SiH4 and CH4 gas mixtures. ICANS 25, Aug 2013, Toronto, Canada. 2013. <hal-00931312>
  • Federico Ventosinos, Christophe Longeaud, J. Schmidt. Improved modulated photocarrier grating technique and determination of the density of acceptor states in hydrogenated amorphous silicon. ICANS 25, Aug 2013, Toronto, Canada. 2013. <hal-00931319>
  • Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Christophe Longeaud, Sofia Gaiaschi. Caractérisation des défauts électriquement actifs de semiconducteurs en couches minces par la technique du photocourant modulé. JNPV 2013, Dec 2013, Dourdan, France. 2013. <hal-00931321>
  • Amir Fath-Allah, Federico Ventosinos, Christophe Longeaud. Regroupement de techniques de caractérisation de matériaux photovoltaïques. JNPV 2013, Dec 2013, Dourdan, France. 2013. <hal-00931325>
  • Sofia Gaiaschi, Marie-Estelle Gueunier-Farret, Christophe Longeaud, E.V. Johnson, Pavel Bulkin, et al.. RF power influence on structural and electrical properties of µc-Si1-xCx:H. EUPVSEC 2013, Sep 2013, Paris, France. 2013. <hal-00931310>
  • Thomas Mambrini, Anne Migan-Dubois, Christophe Longeaud, Laurent Prieur, V. Radivoniuk. Link between the clearness index, the solar spectrum and the efficiency of photovoltaic modules from different technologies. EUPVSEC 2013, Sep 2013, Paris, France. 2013. <hal-00931341>
  • Thomas Mambrini, Anne Migan-Dubois, Christophe Longeaud, Laurent Prieur, V. Radivoniuk. Etudes de la variabilité du spectre solaire et de son impact sur le courant de court-circuit de modules photovoltaïques de différentes technologies. JNPV 2013, Dec 2013, Dourdan, France. 2013. <hal-00931335>
  • Sofia Gaiaschi, R. Ruggeri, E.V. Johnson, Pavel Bulkin, Marie-Estelle Gueunier-Farret, et al.. Caracterisations structurales et electriques de μc-Si1−xCx :H deposes par RF-PECVD. JNPV 2012, Dec 2012, Chantilly, France. 2012. <hal-00781749>
  • Christophe Longeaud, Jennifer Luckas, Matthias Wuttig. Some results on the germanium telluride density of states. ISCMP 2012, Sep 2012, Varna, Bulgaria. 2012. <hal-00779000>
  • Christophe Longeaud. a-Si:H density of states parameters from photoconductivity measurements. Seminar of the Helmholtz Zentrum Berlin, Feb 2012, Berlin, Germany. 2012. <hal-00779001>
  • Arouna Darga, Amir Fathallah, Christophe Longeaud, P. Genevée, F. Donsanti, et al.. Study of the electronic transport properties of Zinc Indium Sulfide thin films deposited by Atomic Layer Deposition technique for solar cells applications. E-MRS Spring Meeting 2012, May 2012, Strasbourg, France. 2012. <hal-00779009>
  • Arouna Darga, José Alvarez, Christophe Longeaud, Jean-Paul Kleider, Fabien Sorin, et al.. Etude des propriétés du transport électroniques dans les cellules à base de Cu2ZnSn(S, Se)4 (CZTSSe). JNPV 2012, Dec 2012, Chantilly, France. 2012. <hal-00779016>
  • Thomas Mambrini, Anne Migan-Dubois, Arouna Darga, Aurore Brézard-Oudot, Christophe Longeaud. Plateforme de caractérisation de modules photovoltaïques en extérieur. JNPV 2012, Dec 2012, Chantilly, France. 2012. <hal-00779019>
  • Christophe Longeaud, Jennifer Luckas, Daniel Krebs, Martin Salinga, Matthias Wuttig. On the density of states of germanium telluride. ICANS24, Aug 2011, Nara, Japan. 2011. <hal-00710788>
  • Federico Ventosinos, Christophe Longeaud, J Schmidt. Comparison between the Oscillating Photocarrier Grating and the Moving Grating Techniques. ICANS24, Aug 2011, Nara, Japan. 2011. <hal-00710761>
  • Jennifer Luckas, Christophe Longeaud, Matthias Wuttig. GeSnTe alloys for application in electronic data storage. ICANS24, Aug 2011, Nara, Japan. 2011. <hal-00710762>
  • Jennifer Luckas, Matthias Wuttig, Christophe Longeaud. The influence of a temperature dependent band gap on the Energy scale of Modulated PhotoCurrent Experiments. E-MRS Spring Meeting, May 2011, Nice, France. 2011. <hal-00710763>
  • Christophe Longeaud. Caractérisation du transport dans les couches minces de a-Si:H par différentes techniques utilisant la photoconductivité. JNPV 2011, Dec 2011, Dourdan, France. 2011. <hal-00710786>
  • Christophe Longeaud. Electronic techniques for the characterization of silicon thin films. French-russian scientific seminar, Silicon and III-V compound semiconductor thin films for photovoltaics: new trends and perspectives, May 2011, Gif-sur-Yvette, France. 2011. <hal-00710799>
  • Jennifer Luckas, Martin Salinga, Christophe Longeaud, Matthias Wuttig. Towards a better understanding of resistance drift and threshold switching phenomena in amorphous phase change materials : study of GeTe versus Ge15Te85. ICANS24, Aug 2011, Nara, Japan. 2011. <hal-00710760>
  • Thomas Mambrini, Anne Migan-Dubois, Cédric Ors, Aurore Brézard, Arouna Darga, et al.. Caractérisation de panneaux solaires photovoltaïques en conditions réelles dímplantation et en fonction de différentes technologies. Journées Nationales PhotoVoltaïques 2011, Dec 2011, Dourdan, France. <hal-00710800>
  • Christophe Longeaud, J Schmidt. a-Si:H transport parameters from experiments based on photoconductivity. ICANS24, Aug 2011, Nara, Japan. 2011. <hal-00710765>
  • A. Bhaduri, P. Chaudhuri, S. Vignoli, Christophe Longeaud. Correlation of structural inhomogeneities with transport properties in amorphous silicon germanium thin films. 18th International photovoltaic science and engineering conference, 2010, Kolkata, Inde. pp.000, 2010. <hal-00555242>
  • A. Bhaduri, P. Chaudhuri, S. Vignoli, Christophe Longeaud. Correlation of structural inhomogeneities with transport properties in amorphous silicon germanium thin films. 18th International photovoltaic science and engineering conference, 2009, Kolbata, India. 2009. <hal-00448290>
  • Christophe Longeaud, P. Chaudhuri. Argon dilution as an alternative to hydrogen dilution for thin films deposition by rf-PECVD. 18th International photovoltaic science and engineering conference, 2009, Kolkata, India. pp.CD-Rom Proceedings, 2009. <hal-00446002>
  • P. Pratim Ray, Christophe Longeaud, D. Daineka. Development of large area single junction amorphous silicon solar cell from argon dilution of silane in a single chamber PECVD system. 18th International photovoltaic science and engineering conference, 2009, Kolkata, Inde. pp.CD-Rom Proceedings, 2009. <hal-00446005>
  • Christophe Longeaud, Jean-Paul Kleider, P. Kaminski, R. Kozlowski. Characterization of defects in semi-insulating SiC by means of Photoinduced current transient spectroscopy and modulated photocurrent technique. XI International Conference “Physics of dielectrics”, Jun 2008, St Petersbourg, Russia. pp.CD-ROM Proceedings, 2008. <hal-00351230>
  • Yrebegnan Moussa Soro, Marie-Estelle Gueunier-Farret, Christophe Longeaud, Jean-Paul Kleider. Device grade hydrogenated polymorphous silicon deposited at high rates. Journées annuelles de la SF2M 2008, Jun 2008, Paris, France. pp.CD-ROM, 2008. <hal-00351235>
  • Christophe Longeaud, J.A. Schmidt, R.R. Koropecki, Jean-Paul Kleider. Determination of hydrogenated amorphous silicon density of states parameters from photoconductivity measurements. 15th International School on Condensed Matter Physics, Sep 2008, Varna, Bulgaria. <hal-00351215>
  • P. Leempoel, P. Descamps, T. Kervyn de Meerenedre, J. Charliac, Pere Roca I Cabarrocas, et al.. Distributed Electron Cyclotron Resonance plasma: a technology for large area deposition of device quality a-Si:H at very high rate. E-MRS 2007 Spring Meeting, 2007, France. <hal-00322305>
  • Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Device grade hydrogenated polymorphous silicon deposited at high rates. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. <hal-00322281>
  • P. Chaudhuri, A. Bhaduri, A. Bandyopadhyay, S. Vignoli, P.P. Ray, et al.. High diffusion length silicon germanium alloys thin films deposited by pulsed rf PECVD method. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. <hal-00322282>
  • Yrebegnan Moussa Soro, A. Abramov, Marie-Estelle Gueunier-Farret, E.V. Johnson, Christophe Longeaud, et al.. Polymorphous silicon thin films deposited at high rate: transport properties and density of states. E-MRS 2007 Spring Meeting, 2007, France. <hal-00322303>
  • J.A. Schmidt, Christophe Longeaud, R.R. Koropecki, R. Arce, Jean-Paul Kleider. Modulated photoconductivity in the high and low frequency regimes. 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, 2007, United States. <hal-00322308>
  • P. Chaudhuri, A. Bhaduri, A. Bandyopadhyay, Christophe Longeaud, Namita Dutta Gupta, et al.. Structural, Mechanical and optoelectronic properties of amorphous carbon films deposited on the different electrodes in a plasma CVD system. 21st European Photovoltaic Solar Energy Conference and Exhibition, 2006, Germany. pp.69-75, 2006. <hal-00321876>
  • T.H. Dao, Marie-Estelle Gueunier-Farret, D. Daineka, P. Bulkin, Pere Roca I Cabarrocas, et al.. Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance. E-MRS 2006 Spring Meeting, 2006, France. <hal-00321911>
  • Namita Dutta Gupta, Christophe Longeaud, P. Chaudhuri, A. Bhaduri, S. Vignoli. Some Properties of amorphous carbon films deposited on the grounded electrode of a RF-PECVD reactor from Ar-CH4 mixtures. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. <hal-00321707>
  • J.A. Schmidt, Christophe Longeaud, R.R. Koropecki, Jean-Paul Kleider. Determination of the density of states of semiconductors from steady-state photoconductivity measurements. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. <hal-00321686>
  • Namita Dutta Gupta, Christophe Longeaud, A. Bhaduri, P. Chaudhuri, S. Vignoli, et al.. Effect of evolution of powders on a-Si:H samples in silane-argon plasma at low power density. 13th International Workshop on the Physics of Semiconductor Devices, 2005, India. <hal-00321712>
  • Marie-Estelle Gueunier-Farret, Cyril Bazin, Jean-Paul Kleider, Christophe Longeaud, P. Bulkin, et al.. Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. <hal-00321694>
  • S. Vignoli, P. Chaudhuri, A. Bhaduri, Namita Dutta Gupta, Christophe Longeaud. Hydrogenated amorphous silicon-carbon alloys obtained from Ar-SiH4 – CH4 gas mixtures : structural and transport properties. 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 2005, Portugal. <hal-00321701>
  • J. Frejlich, R. Montenegro, N.R. Inocente-Junior, P.V. Dos Santos, J.C. Launay, et al.. Phenomenological characterization of photoactive centers in Bi12TiO20 crystals using optical and electrical techniques. PR'05, 10th International Conference on Photorefractive Effects, Materials and Devices, 2005, China. 99, pp.221-227, 2005. <hal-00321270>
  • Christophe Longeaud. Determination of defect states in semiconductors by the modulated photocurrent technique. XXVIII Encontro Nacional de Fisica da Materia Condensada- Sociedad de Fisica do Brasil, 2005, Brazil. <hal-00321264>
  • J.A. Schmidt, Christophe Longeaud, R.R. Koropecki, R. Arce. Photoconductivity measurements used to determine the defect density within the gap of intrinsic semiconductors. Hyperfine Interaction at La Plata, 2005, Argentina. <hal-00321562>
  • Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Christophe Longeaud. The modulated photocurrent technique: comparison of the high and low frequency regimes for the characterisation of bandgap states in thin films semiconductors. a-SiNet Workshop, 2005, Netherlands. <hal-00321563>
  • Namita Dutta Gupta, Christophe Longeaud, A. Bhaduri, P. Chaudhuri. Study of a-C:H films deposited from methane-argon mixture on the grounded and rf powered electrodes of a rf-PECVD Unit. 13th International Workshop on the Physics of Semiconductor Devices, 2005, India. <hal-00321566>
  • Jean-Paul Kleider, Christophe Longeaud, Marie-Estelle Gueunier. Determination of bandgap states characteristics using the modulated photocurrent technique in both low and high frequency regimes. 4th AMS (international conference on Amorphous and Microcrystalline Semiconductors), 2004, Russia. <hal-00321032>
  • Ouafa Saadane, Christophe Longeaud, S. Lebib, Pere Roca I Cabarrocas. Microstructure of hydrogenated polymorphous silicon and its influence on the transport properties. 19th European Photovoltaic Solar Energy Conference, 2004, France. pp.1465-1468, 2004. <hal-00321094>
  • Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Christophe Longeaud. Technique du photocourant modulé pour la caractérisation des états localisés dans la bande interdite des semiconducteurs en couches minces. Séminaire RDT photovoltaïque CNRS-ADEME, Matériaux et procédés pour la conversion photovoltaïque de l'énergie solaire, 2004, France. 2004. <hal-00321088>
  • P. Chaudhuri, Namita Dutta Gupta, Christophe Longeaud. Influence of microstructure on transport properties of Si:H materials deposited from hydrogen or argon dilution of silane. 19th European Photovoltaic Solar Energy Conference, 2004, France. pp.1547, 2004. <hal-00321092>
  • J.A. Schmidt, Christophe Longeaud. Determinacion de la densidad de estados en semiconductores intrinsecos mediante mediciones de fotoconductividad espacialmente modulada. 89a Reunion Nacional de la Asociacion Fisica Argentina, 2004, Argentina. <hal-00321100>

Autre publication1 document

  • Christophe Longeaud. Probing defect states in semiconductors by the modulated photocurrent technique. Séminaire à Institut de physique, Rosario, Argentine. 2005. <hal-00321715>

Chapitre d'ouvrage1 document

  • D. Diouf, Jean-Paul Kleider, Christophe Longeaud. Two-dimensional simulations of interdigitated back contact silicon heterojunctions solar cells. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, Springer-Verlag, pp.483-519, 2011. <hal-00715294>

Brevet1 document

  • Christophe Longeaud. Dispositif de formation d'interférence sur un échantillon. France, N° de brevet: 11 00014. 2011. <hal-00715274>