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Christophe Labbé
172
Documents
Identifiants chercheurs
- christophe-labbe
- IdRef : 157874303
- 0000-0002-1353-7582
Présentation
Publications
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Nb (V, Nb/V)-Doped TiO2 Films as New Transparent Conducting Oxides Synthesized by a Novel ALD Process: Effect of Dopant Content and Growing Conditions244th ECS Meeting, ECS, Oct 2023, Göteborg, Sweden. ⟨10.1149/MA2023-02291487mtgabs⟩
Communication dans un congrès
hal-04384247v1
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Structural, Electrical and Optical Properties of Zn-Doped SrVO3 Thin Films Grown By Co-Sputtering244th ECS Meeting, ECS, Oct 2023, Göteborg, Sweden. ⟨10.1149/MA2023-02341669mtgabs⟩
Communication dans un congrès
hal-04384348v1
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Strontium Vanadate Deposited by ALD: Toward a New Synthesis Approach244th ECS Meeting, ECS, Oct 2023, Göteborg, Sweden. ⟨10.1149/MA2023-02291489mtgabs⟩
Communication dans un congrès
hal-04384320v1
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Toward an Insulator-to-Metal Transition (IMT) in VOx Deposited by ALD: Huge Effect on Large IR Transmission Range244th ECS meeting, ECS, Oct 2023, Göteborg, Sweden. ⟨10.1149/MA2023-02291486mtgabs⟩
Communication dans un congrès
hal-04384198v1
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Spectroscopic studies of new series of alkaline earth elements (Mg, Ca, Sr, Ba) correlated metallophosphonatesSPIE Photonics Europe, Organic Electronics and Photonics: Fundamentals and Devices III, Apr 2022, Strasbourg, France. pp.55, ⟨10.1117/12.2621565⟩
Communication dans un congrès
hal-04076101v1
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(Invited) Luminescence of Rare Earth Doped Si Based Nanofilms for LED and Photovoltaic Applications237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), May 2020, Montreal, Canada. pp.1064-1064, ⟨10.1149/ma2020-01161064mtgabs⟩
Communication dans un congrès
hal-03792557v1
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(Invited) Rare Earth Doped Layers Fabricated By Atomic Layer Deposition237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020) May 10, 2020 - May 14, 2020, May 2020, Montreal, Canada. pp.1066-1066, ⟨10.1149/MA2020-01161066mtgabs⟩
Communication dans un congrès
hal-04076739v1
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(Invited) Rare Earth Doped Layers Fabricated By Atomic Layer Deposition237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020) May 10, 2020 - May 14, May 2020, Montreal, Canada. pp.1066-1066, ⟨10.1149/ma2020-01161066mtgabs⟩
Communication dans un congrès
hal-03792533v1
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First rare earth ions doped Si based down converter layers integration in an industrial Si solar cell7th International Conference "Nanotechnologies and Nanomaterials" NANO-2019, Aug 2019, Lviv, Ukraine
Communication dans un congrès
hal-02405393v1
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Rare earth doped semiconducting nanofilms for Si-based light-emitting devices7th Int. Conf. on Nanotechnologies and Nanomaterials (Nano), Aug 2019, Lviv, Ukraine
Communication dans un congrès
hal-02409326v1
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Rare earth doped silicon based frequency conversion layers for Si solar cell efficiency improvementRéunion plénière du GDR NACRE, Nov 2018, Nov 2018, Paris, France
Communication dans un congrès
hal-02402866v1
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Simulation of dual-wavelength pumped 3.5 µm CW laser operation of Er:Ca$F_{2}$ in waveguide configurationCompact EUV & X-ray Light Sources, 2018, Strasbourg, France. ⟨10.1364/EUVXRAY.2018.JT5A.12⟩
Communication dans un congrès
hal-01873055v1
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(Invited) Naked Eye Blue Emission in Ce 3+ Codoped SiO x N y : Toward Si-Based Light-Emitting Devices233rd ECS Meeting May 13, 2018 - May 17, 2018, May 2018, Seattle, United States. pp.1156-1156, ⟨10.1149/MA2018-01/16/1156⟩
Communication dans un congrès
hal-04076744v1
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Nanostructured silicon and rare earth based gain media for compact infra-red light source: experimental and theoretical investigations7th International Conference on Materials for Advanced Technologies (ICMAT 2013), Jun 2013, Suntec, Singapore
Communication dans un congrès
hal-01141522v1
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ELECTRICAL CONDUCTION IN MOS DEVICES BASED ON SI NANOCRYSTAL-SIOX FILMSEMRS Spring Meeting 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-01152384v1
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Electrical conduction and electroluminescence in MOS devices based on Si nanocrystal embedded in SiOx-Si-Nd filmsMRS Spring Meeting, Apr 2012, San Francisco, United States
Communication dans un congrès
hal-00795796v1
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Rare earth doped Zinc oxide thin films for optoelectronic applicationsEuropean Workshop on nano Transparent Conductive Materials, Jun 2012, Grenoble, France
Communication dans un congrès
hal-00712577v1
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Rare earth doped Zinc oxide thin films for white LED3ème colloque nationale ZnO, Jun 2012, Paris, France
Communication dans un congrès
hal-00712571v1
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Optical and structural properties of SiO2 co-doped with Si-nc and Er3+SPIE NanoScience + Engineering, 2010, San Diego, United States. pp.77660Z, ⟨10.1117/12.865488⟩
Communication dans un congrès
hal-02415361v1
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Photocurrent study of InAs/GaInAsP(Q1.18) quantum dotsIndium Phosphide and Related Materials (IPRM), May 2008, Versailles, France. pp.309-11, ⟨10.1109/ICIPRM.2008.4702977⟩
Communication dans un congrès
hal-00501639v1
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Photoluminescence de nanostructures sur substrat GaP/SiJournées Nanosciences de Bretagne (JNB2), May 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00489402v1
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Light emitting diodes on silicon substrates: preliminary resultsTNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. pp.2212-16, ⟨10.1002/pssc.200881728⟩
Communication dans un congrès
hal-00491905v1
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Preliminary results for the realization of light emitters on silicon substrateSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00491914v1
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Highlighting excitonic optical properties of bundled carbon nanotubes to tailor novel saturable absorbers9th International Conference Trends in Nanotechnology (TNT 2008), Sep 2008, Oviedo, Spain. pp.2160, ⟨10.1002/pssc.200881708⟩
Communication dans un congrès
hal-00531462v1
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Evidence of lateral coupling on the carrier dynamics in InAs/InP(311)B quantum dotsIndium Phosphide and Related Materials, May 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702968⟩
Communication dans un congrès
hal-00487204v1
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Effect of lateral coupling on the carrier redistribution in InAs/InP(311)B high dots surface densityInternational Workshop on Semiconductor Quantum Dot Devices and Applications, Jul 2008, rennes, France. pp.1
Communication dans un congrès
hal-00491786v1
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Optical properties and morphology of the quantum dots InAs/InP (311)B characterized by photoluminescenceLWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. pp.1
Communication dans un congrès
hal-00491995v1
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Potentialités des lasers à fibre dans la génération de rayonnement cohérent UV8ième Colloque sur les sources cohérentes et incohérentes UV, VUV et X, 2006, Colleville sur mer, France
Communication dans un congrès
hal-00154717v1
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Theory and experiment of InAs/InP quantum dots : from calculations to laser emission28th International Conference on the Physics of Semiconductor, Jul 2006, Vienne, Austria. pp.779-780, ⟨10.1063/1.2730122⟩
Communication dans un congrès
hal-00491853v1
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Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under high resonant excitationICSSN (International Conference on SuperLattices, Nano-structures and Nano-Devices), Jul 2006, Istanbul, Turkey. pp.454, ⟨10.1002/pssc.200673214⟩
Communication dans un congrès
hal-00491873v1
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Dynamics spectroscopy in 1.55 µm InAs/InP quantum dots under high resonant excitationIWSQDA (International Workshop on Semiconductor quantum dot based devices and applications), Mar 2006, Paris, France. pp.1
Communication dans un congrès
hal-00491870v1
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Optical characterisation of InAs/InP self-assembled quantum dots for optimisation of lasing propertiesSandie Optics Task Force meeting, Technische Universitat Berlin, January 12-13 (2006), Jan 2006, Berlin, Germany. pp.1
Communication dans un congrès
hal-00504470v1
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Carrier relaxation dynamics of 1.55 µm InAs/InP quantum dots under high resonant excitation28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.991, ⟨10.1063/1.2730228⟩
Communication dans un congrès
hal-00491468v1
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Charge carrier redistribution in ordered Arrays of laterally coupled self-assembled quantum dotsUK Compound Semiconductors conference, Jul 2006, Sheffield, United Kingdom. pp.1
Communication dans un congrès
hal-00491858v1
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Design and Fabrication of GaInAsP-InP VCSEL with two a-Si/a-SiNx Bragg ReflectorsInternational Workshop on PHysics & Applications of SEmiconductor LASERS, Mar 2005, Metz, France. p1
Communication dans un congrès
hal-00491400v1
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Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.141, ⟨10.1051/jp4:2006135031⟩
Communication dans un congrès
hal-00491480v1
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Carrier dynamics and saturation effect in (311)B InAs/InP quantum dot lasersPHASE 2005, international workshop on physics and applications of semiconductors lasers, 2005, Metz, France. pp.1
Communication dans un congrès
hal-00504411v1
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Étude de dispositifs optiques à microcavité verticale pour une émission laser polarisée9ème Colloque sur les Lasers et l'Optique Quantique, Sep 2005, Dijon, France. p. 125-126, ⟨10.1051/jp4:2006135025⟩
Communication dans un congrès
hal-00491469v1
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Nanotechnologies: Etude des boites quantiques pour des applications télécoms, environnementales et médicalesjournées CIES : moniteurs du grand-ouest, 2005, Rennes, France
Communication dans un congrès
hal-00504413v1
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Properties of 1.55 microns quantum dots: Simulation, calculation and optical characterizationinvited seminar at the KU Leuven, 2005, Leuven, Belgium
Communication dans un congrès
hal-00504414v1
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Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniquesjournée des doctorants de Rennes, Dec 2004, Rennes, France. pp.1
Communication dans un congrès
hal-00504407v1
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Lasers à îlots quantiques InAs/InP émettant à 1.55 µm pompés électriquement10èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2004), Jun 2004, La Grande Motte, France
Communication dans un congrès
hal-00149423v1
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Theoretical Description Of The Electronic Coupling Between A Wetting Layer And A QD Superlattice PlaneInternational Conference on Physics of Semiconductors (ICPS 27), Jul 2004, Flagstaff, United States. pp.787, ⟨10.1063/1.1994342⟩
Communication dans un congrès
hal-00504383v1
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Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniquesJournées de la matière condensée, 2004, Nancy, France. pp.1
Communication dans un congrès
hal-00504395v1
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Reciprocal space description of the electronic coupling between a wetting layer and a QD superlattice planeCECAM workshop on "modeling of self-assembled semi-conductors nanostructures", Jun 2004, Lyon, France. pp.1
Communication dans un congrès
hal-00504404v1
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Fundamental emission of InAs/InP quantum dots laser at 1.52 µm26th International Conference on the Physics of Semiconductors (ICPS-26), Aug 2002, Edinburgh, United Kingdom
Communication dans un congrès
hal-00151203v1
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Caractérisations optiques des boites quantiques InAs/InP émettant à 1.55 µm9èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2002), Oct 2002, Saint-Aygulf, France
Communication dans un congrès
hal-00148534v1
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Lasers à îlots quantiques InAs/InP émettant à 1.53µm sur la transition fondamentale8èmes Journées de la Matière Condensée (JMC8), Sep 2002, Marseille, France
Communication dans un congrès
hal-00151208v1
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Lasers à base d'îlots quantiques InAs/Inp(100) et (311)B9èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2002), Oct 2002, Saint-Aygulf, France
Communication dans un congrès
hal-00148526v1
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Growth and Optical Characterizations of InAs Quantum Dots on InP Substrate: Towards a 1.55 µm Quantum Dot Laser12th international conference on Molecular Beam Epitaxy (MBE 2002), Sep 2002, San Francisco (CA), United States. pp.230-235, ⟨10.1016/S0022-0248(02)02473-9⟩
Communication dans un congrès
hal-00151117v1
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Study of Nb2O5 High-k Dielectric Material Deposited By Atomic Layer Deposition for Metal-Insulator-Metal Capacitor244th ECS meeting, Oct 2023, Gôteborg, Sweden. ⟨10.1149/MA2023-02301556mtgabs⟩
Poster de conférence
hal-04384421v1
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Amplificación de la luminiscencia de Eu$^{3+}$ presente en materiales tipo phosphors utilizando nanopartículas de Ag@SiO$_2$Poster de conférence hal-03828042v1 |
Improvement of TiN thin film properties deposited by Atomic Layer DepositionPoster de conférence hal-03860565v1 |
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Integration of rare earth ions doped Si based down converter layers in an industrial Si solar cellE-MRS fall meeting 2019, Sep 2019, Varsovie, Poland
Poster de conférence
hal-02301126v1
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Study of Tb3+-Yb3+ doped Silicon Nitride frequency conversion layers for Solar Cell ApplicationsE-MRS spring meeting, 2014, Lille, France. 2014
Poster de conférence
hal-02404445v1
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Frequency Conversion Layers for Si Solar Cell Efficiency ImprovementFrontiers in Electronic Technologies. , 433, Springer, 2017, Lecture Notes in Electrical Engineering, 978-981-10-4234-8. ⟨10.1007/978-981-10-4235-5_5⟩
Chapitre d'ouvrage
hal-01630978v1
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A material comprising an host matrix, rare earth ions and a metal atom cluster as sensitiserFrance, Patent n° : WO2014111434A1. 2014
Brevet
hal-03428251v1
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