Nombre de documents

24


Modélisation et simulation de procédés technologiques. Application à de nouveaux concepts de composants en nanoélectronique et au traitement de l'information.

Enseignement :

Professeur en traitement  numérique du signal, télécommunications.

 

Curriculum vitae :

2003:                    Chargé de recherche CNRS

                              Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN-CNRS, UMR 8520)

2001-:                  Enseignant-chercheur

                              Institut Supérieur d’Electronique et du Numérique (ISEN)

2001:                    Doctorat

                              Université de Lille 1, Sciences des matériaux


Article dans une revue24 documents

  • Guillaume Copie, Fabrizio Cleri, Younes Makoudi, Christophe Krzeminski, Maxime Berthe, et al.. Surface-Induced Optimal Packing of Two-Dimensional Molecular Networks. Physical Review Letters, American Physical Society, 2015, 114 (6), pp.066101. 〈10.1103/PhysRevLett.114.066101〉. 〈hal-01118764〉
  • Guillaume Copie, Y. Makoudi, Christophe Krzeminski, F. Cherioux, F. Palmino, et al.. Atomic scale modelling of two-dimensional molecular self-assembly on a passivated Si surface. Journal of Physical Chemistry C, American Chemical Society, 2014, 118, pp.12817-12825. 〈10.1021/jp501955v〉. 〈hal-01015193〉
  • Guillaume Copie, Younes Makoudi, Christophe Krzeminski, Frederic Cherioux, Frank Palmino, et al.. Atomic Scale Modelling of Two-Dimensional Molecular Self-Assembly on a Passivated Si Surface. The Journal of Physical Chemistry C, ACS American Chemical Society - Publications, 2014, 118, pp.12817. 〈10.1021/jp501955v〉. 〈hal-01015467〉
  • Corentin Durand, Pierre Capiod, Maxime Berthe, Jean-Philippe Nys, Christophe Krzeminski, et al.. Nanoscale carrier multiplication mapping in a Si diode. Nano Letters, American Chemical Society, 2014, pp 5636-5640. 〈10.1021/nl5022255〉. 〈hal-01070662〉
  • Christophe Krzeminski. Modelling of Silicon Oxynitridation by Nitrous Oxide using the Reaction Rate Approach. Journal of Applied Physics, American Institute of Physics, 2013, 114, pp.224501. 〈10.1063/1.4839675〉. 〈hal-00923920〉
  • Xiang-Lei Han, Guilhem Larrieu, Christophe Krzeminski. Modelling and engineering of stress based controlled oxidation effects for silicon nanostructures patterning. Nanotechnology, Institute of Physics, 2013, 24 (49), pp.495301. 〈hal-00905392〉
  • Christophe Krzeminski. Stress mapping in strain-engineered silicon p-type MOSFET device: A comparison between process simulation and experiments. Journal of vaccum Science and Technology B, 2012, 30 (2), pp.022203-1. 〈10.1116/1.3683079〉. 〈hal-00624131〉
  • Tao Xu, Yannick Lambert, Christophe Krzeminski, Bruno Grandidier, Didier Stiévenard, et al.. Optical absorption of silicon nanowires. Journal of Applied Physics, American Institute of Physics, 2012, 112, pp.033506. 〈10.1063/1.4739708〉. 〈hal-00732649〉
  • Christophe Krzeminski, Xiang-Lei Han, Guilhem Larrieu. Understanding of the Retarded Oxidation Effects in Silicon Nanostructures. Applied Physics Letters, American Institute of Physics, 2012, 100 (26), pp.263111. 〈10.1063/1.4729410〉. 〈hal-00643617v2〉
  • Vikram Passi, Ulf Sodervall, Bengt Nilsson, Goran Petersson, Mats Hagberg, et al.. Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release. Microelectronic Engineering, Elsevier, 2012, 95, pp.83-89. 〈10.1016/j.mee.2012.01.005〉. 〈hal-00643499〉
  • Christophe Krzeminski, Evelyne Lampin. Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation. European Journal of physics B, 2011, 81, pp.283. 〈10.1140/epjb/e2011-10958-7〉. 〈hal-00600162〉
  • D.H.K. Murthy, T. Xu, W. H. Chen, J. Houtepen A., T.J. Savenije, et al.. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient. Nanotechnology, Institute of Physics, 2011, 22 (31), pp.315710. 〈10.1088/0957-4484/22/31/315710〉. 〈hal-00603527〉
  • Xiaohui Tang, Christophe Krzeminski, Aurelien Lecavelier Des Etangs-Levallois, Zhenkun Chen, Emmanuel Dubois, et al.. Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories. Nano Letters, American Chemical Society, 2011, 11, pp.4520-4526. 〈10.1021/nl202434k〉. 〈hal-00640212〉
  • Evelyne Lampin, Catherine Priester, Christophe Krzeminski, Laurence Magaud. Graphene buffer layer on Si-terminated SiC studied with an empirical interatomic potential. Journal of Applied Physics, American Institute of Physics, 2010, 107 (10), pp.103514. 〈10.1063/1.3357297〉. 〈hal-00549078〉
  • Christophe Krzeminski, Xiaohui Tang, Nicolas Reckinger, Vincent Bayot, Emmanuel Dubois. Process Optimization and Downscaling of a Single Electron Single Dot Memory. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2009, 8 (9), pp.737-748. 〈10.1109/TNANO.2009.2021653〉. 〈hal-00601623〉
  • Vikram Passi, Aurélie Lecestre, Christophe Krzeminski, Guilhem Larrieu, Emmanuel Dubois, et al.. A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum. Microelectronic Engineering, Elsevier, 2009, 87 (10), pp.1872. 〈10.1016/j.mee.2009.11.022〉. 〈hal-00625915〉
  • Christophe Krzeminski, Quentin Brulin, V. Cuny, Emmanuel Lecat, Evelyne Lampin, et al.. Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential. Journal of Applied Physics, American Institute of Physics, 2007, 101 (12), pp.123506. 〈10.1063/1.2743089〉. 〈hal-00605238〉
  • Christophe Krzeminski, Guilhem Larrieu, Julien Penaud, Evelyne Lampin, Emmanuel Dubois. Silicon dry oxidation kinetics at low temperature in the nanometric range: Modeling and experiment. Journal of Applied Physics, American Institute of Physics, 2007, 101 (064908), pp.064908-1-8. 〈10.1063/1.2711764͔〉. 〈hal-00600436〉
  • Tang Xiaohui, Nicolas Reckinger, Vincent Bayot, Christophe Krzeminski, Emmanuel Dubois, et al.. Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2006, 5 (6), p. 649. 〈10.1109/TNANO.2006.883481〉. 〈hal-00623277〉
  • Gauthier Mahieu, Bruno Grandidier, Didier Stiévenard, Christophe Krzeminski, Christophe Delerue, et al.. Adsorption behavior of conjugated {C}3-oligomers on Si(100) and HOPG surfaces. Langmuir, American Chemical Society, 2003, 19 (8), pp.3350-3356. 〈10.1021/la026907n〉. 〈hal-00688536〉
  • Christophe Krzeminski, Christophe Delerue, Guy Allan. Tight binding description of the electronic response of a molecular device to an applied voltage. Journal of Physical Chemistry B, American Chemical Society, 2001, 105 (27), pp.6321. 〈10.1021/jp011263y〉. 〈hal-00604398〉
  • Bruno Grandidier, Jean-Philippe Nys, Didier Stiévenard, Christophe Krzeminski, Christophe Delerue, et al.. Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si (100) surface. Surface Science, Elsevier, 2001, 473 (1-2), pp.1-7. 〈10.1016/S0039-6028(00)00946-8〉. 〈hal-00688535〉
  • Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, R. Metzger. Theory of electrical rectification in a molecular monolayer. Physical Review B : Condensed matter and materials physics, American Physical Society, 2001, 64 (8), pp.085405. 〈10.1103/PhysRevB.64.085405〉. 〈hal-00604397〉
  • Christophe Krzeminski, Christophe Delerue, Guy Allan, Vincent Haguet, Didier Stiévenard, et al.. Theoretical characterization of the electronic properties of extended thienylenevinylene oligomers. Journal of Chemical Physics, American Institute of Physics, 1999, 111 (14), pp.6643-6649. 〈10.1063/1.480012〉. 〈hal-00633591〉