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Researcher identifiers

Number of documents

283

Curriculum vitae of Christophe Delerue

Christophe Delerue, born in 1963

Email: christophe.delerue@iemn.fr

Position: CNRS Research Director (DR1).

Laboratory: IEMN - Institute of Electronics, Microelectronics and Nanotechnology, Villeneuve d'Ascq (France). Website: http://www.iemn.fr

Training

1986: ISEN Engineering Degree.

1986: Master's Degree in Materials Science, University of Lille.

1989: PhD in Materials Science, University of Lille.

1998: Habilitation to Direct Research, University of Lille.

Professional experience

1989-2002: CNRS Research Fellow. 

2002-2011: Research Director 2nd class, CNRS.

2011-: Research Director 1st class, CNRS.

2012-2013: Debye Professor, University of Utrecht, Netherlands.

Responsibilities

1998-2012: Head of the Physics Group of the IEMN.

2002-2006: Coordinator of the European Network Nanospectra.

2006-2009: Director of the GDR DFT++ (Electronic Structure, DFT).

2020-: Deputy Director of the IEMN - Scientific Director.

Scientific fields

Theoretical physics and numerical simulation. Semiconductors, nanostructures (quantum boxes, nanocrystals, nanowires), ultimate transistors, quantum components, lasers, molecular electronics, topological insulators. Transport and quantum optics.

Publications & Impact

https://publons.com/researcher/1410631/christophe-delerue/ 

Monograph

C. Delerue & M. Lannoo, "Nanostructures: Theory and Modelling", Springer (2004).

Awards

2007: Ancel Prize of the French Physical Society.

2012: 3rd Bull Joseph Fourier Prize (with Y.M. Niquet and F. Triozon).

Editorial responsibility

2003-2008: Co-editor and then "advisory editor" of the magazine Europhysics Letters.

 

 

 

Journal articles146 documents

  • Nemanja Peric, Yannick Lambert, Shalini Singh, Ali Hossain Khan, Nathali Alexandra Franchina Vergel, et al.. Van Hove singularities and trap states in two-dimensional CdSe nanoplatelets. Nano Letters, American Chemical Society, 2021, 21 (4), pp.1702-1708. ⟨10.1021/acs.nanolett.0c04509⟩. ⟨hal-03152599⟩
  • Sang-Soo Chee, Charlie Gréboval, Debora Magalhaes, Tung Dang, Julien Ramade, et al.. Correlating Structure and Detection Properties in HgTe Nanocrystal Films. Nano Letters, American Chemical Society, 2021, 21, ⟨10.1021/acs.nanolett.0c04346⟩. ⟨hal-03220006⟩
  • Charlie Gréboval, Audrey Chu, Debora Magalhaes, Julien Ramade, Junling Qu, et al.. Ferroelectric Gating of Narrow Band-Gap Nanocrystal Arrays with Enhanced Light Matter Coupling. ACS photonics, American Chemical Society,, 2021, 8 (1), pp.259-268. ⟨10.1021/acsphotonics.0c01464⟩. ⟨hal-03102784⟩
  • Audrey Chu, Charlie Gréboval, Yoann Prado, Hicham Majjad, Christophe Delerue, et al.. Infrared photoconduction at the diffusion length limit in HgTe nanocrystal arrays. Nature Communications, Nature Publishing Group, 2021, 12, pp.1794. ⟨10.1038/s41467-021-21959-x⟩. ⟨hal-03174530⟩
  • Pierre Capiod, Maaike van der Sluijs, Jeroen de Boer, Christophe Delerue, Ingmar Swart, et al.. Electronic properties of atomically coherent square PbSe nanocrystal superlattice resolved by Scanning Tunneling Spectroscopy. Nanotechnology, Institute of Physics, 2021, ⟨10.1088/1361-6528/abfd57⟩. ⟨hal-03215129⟩
  • Yoann Prado, Junling Qu, Charlie Gréboval, Corentin Dabard, Prachi Rastogi, et al.. Seeded growth of HgTe nanocrystals for shape control and their use in narrow infrared electroluminescence. Chemistry of Materials, American Chemical Society, 2021, ⟨10.1021/acs.chemmater.0c04526⟩. ⟨hal-03168405⟩
  • Thomas Gardenier, Jette van den Broeke, Jesper Moes, Ingmar Swart, Christophe Delerue, et al.. p Orbital Flat Band and Dirac Cone in the Electronic Honeycomb Lattice Article. ACS Nano, American Chemical Society, 2020, 5, ⟨10.1021/acsnano.0c05747⟩. ⟨hal-02958370⟩
  • Nathali Franchina Vergel, L. Christiaan Post, Guillaume Fleury, Gilles Patriarche, Tao Xu, et al.. Engineering a Robust Flat Band in III–V Semiconductor Heterostructures. Nano Letters, American Chemical Society, 2020, 21, pp.680. ⟨10.1021/acs.nanolett.0c04268⟩. ⟨hal-03089743⟩
  • Moussa Biaye, Yorai Amit, Kamil Gradkowski, Natalia Turek, Sylvie Godey, et al.. Doped colloidal InAs nanocrystals in the single ionized dopant limit. Journal of Physical Chemistry C, American Chemical Society, 2019, 123 (23), pp.14803-14812. ⟨10.1021/acs.jpcc.9b02576⟩. ⟨hal-02162600⟩
  • Louis Biadala, Wenbing Peng, Yannick Lambert, Jin Kim, Damien Canneson, et al.. Trap-free heterostructure of PbS nanoplatelets on InP(001) by chemical epitaxy. ACS Nano, American Chemical Society, 2019, 13 (2), pp.1961-1967. ⟨10.1021/acsnano.8b08413⟩. ⟨hal-02054700⟩
  • Maryam Alimoradi Jazi, Aditya Kulkarni, Sophia Buhbut Sinai, Joep Peters, Eva Geschiere, et al.. Room-Temperature Electron Transport in Self-Assembled Sheets of PbSe Nanocrystals with a Honeycomb Nanogeometry. Journal of Physical Chemistry C, American Chemical Society, 2019, 123 (22), pp.14058-14066. ⟨10.1021/acs.jpcc.9b03549⟩. ⟨hal-02162601⟩
  • N. Franchina Vergel, A. Tadjine, V. Notot, M. Mohr, A. Kouassi N’guissan, et al.. Influence of doping level and surface states in tunneling spectroscopy of an In0.53Ga0.47As quantum well grown on p-type doped InP(001). Physical Review Materials, American Physical Society, 2019, 3 (9), ⟨10.1103/PhysRevMaterials.3.094604⟩. ⟨hal-02309916⟩
  • Marion Dufour, Eva Izquierdo, Clément Livache, Bertille Martinez, Mathieu Silly, et al.. Doping as a strategy to tune color of 2D colloidal nanoplatelets. ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2019, 11 (10), pp.10128-10134. ⟨10.1021/acsami.8b18650⟩. ⟨hal-02030568⟩
  • Jing Li, Christophe Delerue. Intrinsic transport properties of nanoporous graphene highly suitable for complementary field-effect transistors. 2D Materials, IOP Publishing, 2019, 6 (3), pp.035026. ⟨10.1088/2053-1583/ab1c25⟩. ⟨hal-02133315⟩
  • Willem Walravens, Eduardo Solano, Filip Geenen, Jolien Dendooven, Oleg Gorobtsov, et al.. Setting Carriers Free: Healing Faulty Interfaces Promotes Delocalization and Transport in Nanocrystal Solids. ACS Nano, American Chemical Society, 2019, 13 (11), pp.12774-12786. ⟨10.1021/acsnano.9b04757⟩. ⟨hal-02517025⟩
  • L Post, T Xu, N Franchina Vergel, T Tadjine, L Lambert, et al.. Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III–V semiconductors. Nanotechnology, Institute of Physics, 2019, 30 (15), pp.155301. ⟨10.1088/1361-6528/aafd3f⟩. ⟨hal-02133316⟩
  • Frank Spoor, Gianluca Grimaldi, Christophe Delerue, Wiel Evers, Ryan Crisp, et al.. Asymmetric Optical Transitions Determine the Onset of Carrier Multiplication in Lead Chalcogenide Quantum Confined and Bulk Crystals. ACS Nano, American Chemical Society, 2018, 12 (5), pp.4796-4802. ⟨10.1021/acsnano.8b01530⟩. ⟨hal-02133328⟩
  • Athmane Tadjine, Christophe Delerue. Colloidal nanocrystals as LEGO® bricks for building electronic band structure models. Physical Chemistry Chemical Physics, Royal Society of Chemistry, 2018, 20 (12), pp.8177-8184. ⟨10.1039/C7CP08400E⟩. ⟨hal-02133332⟩
  • Christophe Delerue. Electronic structure of Si nanocrystals codoped with boron and phosphorus. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (4), ⟨10.1103/physrevb.98.045434⟩. ⟨hal-02133333⟩
  • Pieter Geiregat, Arjan Houtepen, Laxmi Kishore Sagar, Ivan Infante, Felipe Zapata, et al.. Continuous-wave infrared optical gain and amplified spontaneous emission at ultralow threshold by colloidal HgTe quantum dots. Nature Materials, Nature Publishing Group, 2018, 17 (1), pp.35-42. ⟨10.1038/nmat5000⟩. ⟨hal-02133329⟩
  • Margaret Hudson, Menglu Chen, Vladislav Kamysbayev, Eric Janke, Xinzheng Lan, et al.. Conduction Band Fine Structure in Colloidal HgTe Quantum Dots. ACS Nano, American Chemical Society, 2018, 12 (9), pp.9397-9404. ⟨10.1021/acsnano.8b04539⟩. ⟨hal-02133327⟩
  • Athmane Tadjine, Christophe Delerue. Anderson localization induced by gauge-invariant bond-sign disorder in square PbSe nanocrystal lattices. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (12), ⟨10.1103/physrevb.98.125412⟩. ⟨hal-02133331⟩
  • Vincent Sallet, Corinne Sartel, Said Hassani, Christèle Vilar, Gaelle Amiri, et al.. Crystal facet engineering in Ga-doped ZnO nanowires for MIR plasmonics.. Crystal Growth & Design, American Chemical Society, 2018, 18 (8), pp.4287-4295. ⟨10.1021/acs.cgd.8b00048⟩. ⟨hal-01823481⟩
  • Tianzhen Zhang, Sergio Vlaic, Stéphane Pons, Alexandre Assouline, Alexandre Zimmers, et al.. Quantum confinement effects in Pb nanocrystals grown on InAs. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 97 (21), ⟨10.1103/physrevb.97.214514⟩. ⟨hal-01921229⟩
  • Jing Li, Yann-Michel Niquet, Christophe Delerue. Complexity of the hot carrier relaxation in Si nanowires compared to bulk. Physical Review B, American Physical Society, 2017, 95 (20), pp.205401. ⟨10.1103/PhysRevB.95.205401⟩. ⟨hal-02015399⟩
  • Athmane Tadjine, Yann-Michel Niquet, Christophe Delerue. Universal behavior of electron g -factors in semiconductor nanostructures. Physical Review B, American Physical Society, 2017, 95 (23), ⟨10.1103/PhysRevB.95.235437⟩. ⟨hal-02906812⟩
  • C. Kriso, F. Triozon, C. Delerue, L. Schneider, F. Abbate, et al.. Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements. Solid-State Electronics, Elsevier, 2017, 129, pp.93-96. ⟨10.1016/j.sse.2016.12.011⟩. ⟨hal-02906816⟩
  • Narjes Jomaa, Christophe Delerue, Moncef Said. Intrinsic strain effects on Ge/Si core/shell nanowires: Insights from atomistic simulations. Superlattices and Microstructures, Elsevier, 2017, 107, pp.83-90. ⟨10.1016/j.spmi.2017.04.011⟩. ⟨hal-02906811⟩
  • Athmane Tadjine, Christophe Delerue. Topological protection of electronic states against disorder probed by their magnetic moment. Physical Review B, American Physical Society, 2017, 95 (23), ⟨10.1103/PhysRevB.95.235426⟩. ⟨hal-02906814⟩
  • Athmane Tadjine, Christophe Delerue. Robustness of states at the interface between topological insulators of opposite spin Chern number. EPL - Europhysics Letters, European Physical Society/EDP Sciences/Società Italiana di Fisica/IOP Publishing, 2017, 118 (6), pp.67003. ⟨10.1209/0295-5075/118/67003⟩. ⟨hal-02906810⟩
  • M. Alimoradi Jazi, V. Janssen, W. Evers, A. Tadjine, C. Delerue, et al.. Transport Properties of a Two-Dimensional PbSe Square Superstructure in an Electrolyte-Gated Transistor. Nano Letters, American Chemical Society, 2017, 17 (9), pp.5238-5243. ⟨10.1021/acs.nanolett.7b01348⟩. ⟨hal-02906808⟩
  • Christophe Delerue. Minimum Line Width of Surface Plasmon Resonance in Doped ZnO Nanocrystals. Nano Letters, American Chemical Society, 2017, 17 (12), pp.7599-7605. ⟨10.1021/acs.nanolett.7b03605⟩. ⟨hal-02906807⟩
  • Jing Li, Yann-Michel Niquet, Christophe Delerue. Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons. Physical Review Letters, American Physical Society, 2016, 116 (23), pp.236602. ⟨10.1103/PhysRevLett.116.236602⟩. ⟨cea-01849844⟩
  • Jing Li, Evelyne Lampin, Christophe Delerue, Yann-Michel Niquet. Theoretical investigation of the phonon-limited carrier mobility in (001) Si films. Journal of Applied Physics, American Institute of Physics, 2016, 120 (17), pp.174301. ⟨10.1063/1.4966616⟩. ⟨cea-01849845⟩
  • Christophe Delerue. Order and progress. Nature Materials, Nature Publishing Group, 2016, 15 (5), pp.498-499. ⟨10.1038/nmat4597⟩. ⟨hal-02906818⟩
  • Pieter Geiregat, Guy Allan, Zeger Hens, Christophe Delerue. Single-exciton optical gain in semiconductor nanocrystals: Positive role of electron-phonon coupling. Physical Review B, American Physical Society, 2016, 93 (11), ⟨10.1103/PhysRevB.93.115416⟩. ⟨hal-02906819⟩
  • Wiel Evers, Juleon Schins, Michiel Aerts, Aditya Kulkarni, Pierre Capiod, et al.. High charge mobility in two-dimensional percolative networks of PbSe quantum dots connected by atomic bonds. Nature Communications, Nature Publishing Group, 2015, 6 (1), ⟨10.1038/ncomms9195⟩. ⟨hal-02906821⟩
  • W. Beugeling, E. Kalesaki, C. Delerue, Y.-M. Niquet, D. Vanmaekelbergh, et al.. (Invited) Topological States in Multi-Orbital Honeycomb Lattices of HgTe (CdTe) Quantum Dots. ECS Transactions, Electrochemical Society, Inc., 2015, 69 (5), pp.81-88. ⟨10.1149/06905.0081ecst⟩. ⟨hal-02906822⟩
  • W. Beugeling, E. Kalesaki, Christophe Delerue, Yann-Michel Niquet, D. Vanmaekelbergh, et al.. Topological states in multi-orbital HgTe honeycomb lattices. Nature Communications, Nature Publishing Group, 2015, 6, pp.6316. ⟨10.1038/ncomms7316⟩. ⟨hal-01587149⟩
  • Jing Li, Gabriel Mugny, Yann-Michel Niquet, Christophe Delerue. Drift velocity versus electric field in < 110 > Si nanowires: Strong confinement effects. Applied Physics Letters, American Institute of Physics, 2015, 107 (6), pp.063103. ⟨10.1063/1.4928525⟩. ⟨hal-01615208⟩
  • Jing Li, Henrique Pereira Coutada Miranda, Yann-Michel Niquet, Luigi Genovese, Ivan Duchemin, et al.. Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2015, 92 (7), pp.075414. ⟨10.1103/PhysRevB.92.075414⟩. ⟨hal-01615207⟩
  • Christophe Delerue, D. Vanmaekelbergh. Electronic band structure of zinc blende CdSe and rock salt PbSe semiconductors with silicene-type honeycomb geometry. 2D Materials, IOP Publishing, 2015, 2 (3), pp.034008. ⟨10.1088/2053-1583/2/3/034008⟩. ⟨hal-02906823⟩
  • Pieter Geiregat, Christophe Delerue, Yolanda Justo, Michiel Aerts, Frank Spoor, et al.. A Phonon Scattering Bottleneck for Carrier Cooling in Lead Chalcogenide Nanocrystals. ACS Nano, American Chemical Society, 2015, 9 (1), pp.778-788. ⟨10.1021/nn5062723⟩. ⟨hal-02906824⟩
  • Shu Zhou, Xiaodong Pi, Zhenyi Ni, Yi Ding, Yingying Jiang, et al.. Comparative Study on the Localized Surface Plasmon Resonance of Boron- and Phosphorus-Doped Silicon Nanocrystals. ACS Nano, American Chemical Society, 2015, 9 (1), pp.378-386. ⟨10.1021/nn505416r⟩. ⟨hal-02906826⟩
  • Flore Kunst, Christophe Delerue, Cristiane Morais Smith, Vladimir Juričić. Kekule versus hidden superconducting order in graphene-like systems: Competition and coexistence. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2015, 92 (16), ⟨10.1103/PhysRevB.92.165423⟩. ⟨hal-02906820⟩
  • Corentin Durand, Pierre Capiod, Maxime Berthe, Jean-Philippe Nys, Christophe Krzeminski, et al.. Nanoscale carrier multiplication mapping in a Si diode. Nano Letters, American Chemical Society, 2014, 14 (10), pp 5636-5640. ⟨10.1021/nl5022255⟩. ⟨hal-01070662⟩
  • Jing Li, Narjes Jomaa, Yann-Michel Niquet, Moncef Said, Christophe Delerue. Hole mobility in Ge/Si core/shell nanowires: What could be the optimum?. Applied Physics Letters, American Institute of Physics, 2014, 105 (23), pp.233104. ⟨10.1063/1.4903475⟩. ⟨hal-02137824⟩
  • B. Voisin, M. Cobian, X. Jehl, M. Vinet, Yann-Michel Niquet, et al.. Control of the ionization state of three single donor atoms in silicon. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2014, 89, 161404(R), 5 p. ⟨10.1103/PhysRevB.89.161404⟩. ⟨hal-00981141⟩
  • Sean E. Keuleyan, Philippe Guyot-Sionnest, Christophe Delerue, Guy Allan. Mercury telluride colloidal quantum dots : electronic structure, size-dependent spectra, and photocurrent detection up to 12 µm. ACS Nano, American Chemical Society, 2014, 8, pp.8676-8682. ⟨10.1021/nn503805h⟩. ⟨hal-01063878⟩
  • Christophe Delerue. Prediction of robust two-dimensional topological insulators based on Ge/Si nanotechnology. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2014, 90, 075424, 8 p. ⟨10.1103/PhysRevB.90.075424⟩. ⟨hal-01058153⟩
  • E. Kalesaki, C. Delerue, C. Morais Smith, W. Beugeling, G. Allan, et al.. Dirac cones, topological edge states, and nontrivial flat bands in two-dimensional semiconductors with a honeycomb nanogeometry. Physical Review X, American Physical Society, 2014, 4, 011010, 12 p. ⟨10.1103/PhysRevX.4.011010⟩. ⟨hal-00939871⟩
  • X.D. Pi, C. Delerue. Tight-binding calculations of the optical response of optimally P-doped Si nanocrystals : a model for localized surface plasmon resonance. Physical Review Letters, American Physical Society, 2013, 111, 177402, 5 p. ⟨10.1103/PhysRevLett.111.177402⟩. ⟨hal-00877649⟩
  • E. Kalesaki, W.H. Evers, G. Allan, D. Vanmaekelbergh, C. Delerue. Electronic structure of atomically coherent square semiconductor superlattices with dimensionality below two. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2013, 88, pp.115431-1-9. ⟨10.1103/PhysRevB.88.115431⟩. ⟨hal-00871971⟩
  • J. Li, T. Gu, C. Delerue, Y.M. Niquet. Electronic structure and transport properties of Si nanotubes. Journal of Applied Physics, American Institute of Physics, 2013, 114, pp.053706-1-4. ⟨10.1063/1.4817527⟩. ⟨hal-00871969⟩
  • A. Al-Otaify, S.V. Kershaw, S. Gupta, A.L. Rogach, G. Allan, et al.. Multiple exciton generation and ultrafast exciton dynamics in HgTe colloidal quantum dots. Physical Chemistry Chemical Physics, Royal Society of Chemistry, 2013, 15, pp.16864-16873. ⟨10.1039/C3CP52574K⟩. ⟨hal-00871970⟩
  • G. Allan, C. Delerue. Tight-binding calculations of the optical properties of HgTe nanocrystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2012, 86, pp.165437-1-6. ⟨10.1103/PhysRevB.86.165437⟩. ⟨hal-00787874⟩
  • R. Ulbricht, J.J.H. Pijpers, E. Groeneveld, R. Koole, C. de Mello Donega, et al.. Loosening quantum confinement : observation of real conductivity caused by hole polarons in semiconductor nanocrystals smaller than the Bohr radius. Nano Letters, American Chemical Society, 2012, 12, pp.4937-4942. ⟨10.1021/nl302517z⟩. ⟨hal-00787844⟩
  • M. Cadirci, S.K. Stubbs, S.J.O. Hardman, O. Masala, G. Allan, et al.. Ultrafast exciton dynamics in InAs/ZnSe nanocrystal quantum dots. Physical Chemistry Chemical Physics, Royal Society of Chemistry, 2012, 14, pp.15166-15172. ⟨10.1039/C2CP42125A⟩. ⟨hal-00787872⟩
  • Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau. Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59, pp.1480-1487. ⟨10.1109/TED.2012.2187788⟩. ⟨hal-00787798⟩
  • Y.M. Niquet, H. Mera, C. Delerue. Impurity-limited mobility and variability in gate-all-around silicon nanowires. Applied Physics Letters, American Institute of Physics, 2012, 100, pp.153119-1-4. ⟨10.1063/1.4704174⟩. ⟨hal-00787840⟩
  • Y.M. Niquet, C. Delerue, C. Krzeminski. Effects of strain on the carrier mobility in silicon nanowires. Nano Letters, American Chemical Society, 2012, 12, pp.3545-3550. ⟨10.1021/nl3010995⟩. ⟨hal-00787472⟩
  • E. Groeneveld, C. Delerue, G. Allan, Y.M. Niquet, C. de Mello Donega. Size-dependence of the exciton transitions in colloidal CdTe quantum dots. Journal of Physical Chemistry C, American Chemical Society, 2012, 116, pp.23160-23167. ⟨10.1021/jp3080942⟩. ⟨hal-00787845⟩
  • B. de Geyter, A.J. Houtepen, S. Carrillo, P. Geiregat, Y. Gao, et al.. Broadband and picosecond intraband absorption in lead based colloidal quantum dots. ACS Nano, American Chemical Society, 2012, 6, pp.6067-6074. ⟨10.1021/nn301149x⟩. ⟨hal-00787436⟩
  • Y.M. Niquet, C. Delerue. Carrier mobility in strained Ge nanowires. Journal of Applied Physics, American Institute of Physics, 2012, 112, pp.084301-1-4. ⟨10.1063/1.4759346⟩. ⟨hal-00787437⟩
  • Y.M. Niquet, C. Delerue. Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2011, 84, pp.075478-1-9. ⟨10.1103/PhysRevB.84.075478⟩. ⟨hal-00639883⟩
  • G. Allan, C. Delerue. Optimization of carrier multiplication for more efficient solar cells : the case of Sn quantum dots. ACS Nano, American Chemical Society, 2011, 5, pp.7318-7323. ⟨10.1021/nn202180u⟩. ⟨hal-00639886⟩
  • R. Stiufiuc, L.M.A. Perdigao, B. Grandidier, D. Deresmes, G. Allan, et al.. Above-barrier surface electron resonances induced by a molecular network. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 81, pp.045421-1-5. ⟨10.1103/PhysRevB.81.045421⟩. ⟨hal-00549037⟩
  • T.H. Nguyen, G. Mahieu, Maxime Berthe, B. Grandidier, C. Delerue, et al.. Coulomb energy determination of a single Si dangling bond. Physical Review Letters, American Physical Society, 2010, 105, pp.226404-1-4. ⟨10.1103/PhysRevLett.105.226404⟩. ⟨hal-00549059⟩
  • C. Delerue, G. Allan, J.J.H. Pijpers, M. Bonn. Carrier multiplication in bulk and nanocrystalline semiconductors : mechanism, efficiency, and interest for solar cells. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 81, pp.125306-1-6. ⟨10.1103/PhysRevB.81.125306⟩. ⟨hal-00549046⟩
  • I. Moreels, G. Allan, B. de Geyter, L. Wirtz, C. Delerue, et al.. Dielectric function of colloidal lead chalcogenide quantum dots obtained by a Kramers-Krönig analysis of the absorbance spectrum. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 81, pp.235319-1-7. ⟨10.1103/PhysRevB.81.235319⟩. ⟨hal-00549057⟩
  • M.P. Persson, H. Mera, Y.M. Niquet, C. Delerue, M. Diarra. Charged impurity scattering and mobility in gated silicon nanowires. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 82, pp.115318-1-8. ⟨10.1103/PhysRevB.82.115318⟩. ⟨hal-00549048⟩
  • Y.M. Niquet, L. Genovese, C. Delerue, T. Deutsch. Ab initio calculation of the binding energy of impurities in semiconductors : application to Si nanowires. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 81, pp.161301(R)-1-4. ⟨10.1103/PhysRevB.81.161301⟩. ⟨hal-00549021⟩
  • J.J.H. Pijpers, M.T.W. Milder, C. Delerue, M. Bonn. (Multi)exciton dynamics and exciton polarizability in colloidal InAs quantum dots. Journal of Physical Chemistry C, American Chemical Society, 2010, 114, pp.6318-6324. ⟨10.1021/jp911948z⟩. ⟨hal-00549022⟩
  • W. Zhang, C. Delerue, Y.M. Niquet, G. Allan, E. Wang. Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 82, pp.115319-1-7. ⟨10.1103/PhysRevB.82.115319⟩. ⟨hal-00549040⟩
  • K. Overgaag, D. Vanmaekelbergh, P. Liljeroth, G. Mahieu, B. Grandidier, et al.. Electron-phonon coupling and intervalley splitting determine the linewidth of single-electron transport through PbSe nanocrystals. Journal of Chemical Physics, American Institute of Physics, 2009, 131, pp.224510-1-5. ⟨10.1063/1.3272952⟩. ⟨hal-00473088⟩
  • J.J.H. Pijpers, R. Ulbricht, K.J. Tielrooij, A. Osherov, Y. Golan, et al.. Assessment of carrier-multiplication efficiency in bulk PbSe and PbS. Nature Physics, Nature Publishing Group, 2009, 5, pp.811-814. ⟨10.1038/nphys1393⟩. ⟨hal-00473076⟩
  • G. Allan, C. Delerue. Fast relaxation of hot carriers by impact ionization in semiconductor nanocrystals : role of defects. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2009, 79, pp.195324-1-5. ⟨10.1103/PhysRevB.79.195324⟩. ⟨hal-00473094⟩
  • I. Moreels, K. Lambert, D. Smeets, D. de Muynck, T. Nollet, et al.. Size-dependent optical properties of colloidal PbS quantum dots. ACS Nano, American Chemical Society, 2009, 3, pp.3023-3030. ⟨10.1021/nn900863a⟩. ⟨hal-00473363⟩
  • Z. Sun, I. Swart, C. Delerue, D. Vanmaekelbergh, P. Liljeroth. Orbital and charge-resolved polaron states in CdSe dots and rods probed by scanning tunneling spectroscopy. Physical Review Letters, American Physical Society, 2009, 102, pp.196401-1-4. ⟨10.1103/PhysRevLett.102.196401⟩. ⟨hal-00473341⟩
  • Maxime Berthe, R. Stiufiuc, B. Grandidier, D. Deresmes, C. Delerue, et al.. Probing the carrier capture rate of a single quantum level. Science, American Association for the Advancement of Science, 2008, 319, pp.436-438. ⟨10.1126/science.1151186⟩. ⟨hal-00357378⟩
  • G. Allan, S. Barbet, Y. Coffinier, C. Delerue, D. Deresmes, et al.. Fundamental studies in nanosciences at the Institute of Electronics, Microelectronics, and Nanotechnology (IEMN). International Journal of Nanotechnology, Inderscience, 2008, 5, 631-648, Special Issue on Nanotechnology in France. Part I : C'nano Nord-Ouest. ⟨10.1504/IJNT.2008.018686⟩. ⟨hal-00357348⟩
  • R. Koole, G. Allan, C. Delerue, D. Vanniaekelbergh, A.J. Houtepen, et al.. Response concerning ‘On the interpretation of colloidal quantum dot absorption spectra'. Small, Wiley-VCH Verlag, 2008, 4, pp.1869-1870. ⟨10.1002/smll.200800488⟩. ⟨hal-00357387⟩
  • R. Koole, G. Allan, C. Delerue, A. Meijerink, D. Vanmaekelbergh, et al.. Optical investigation of quantum confinement in PbSe nanocrystals at different points in the Brillouin zone. Small, Wiley-VCH Verlag, 2008, 4, pp.127-133. ⟨10.1002/smll.200700632⟩. ⟨hal-00357365⟩
  • G. Allan, C. Delerue. Influence of electronic structure and multiexciton spectral density on multiple-exciton generation in semiconductor nanocrystals : tight-binding calculations. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2008, 77, pp.125340-1-10. ⟨10.1103/PhysRevB.77.125340⟩. ⟨hal-00357366⟩
  • M. Diarra, C. Delerue, Y.M. Niquet, G. Allan. Screening and polaronic effects induced by a metallic gate and a surrounding oxide on donor and acceptor impurities in silicon nanowires. Journal of Applied Physics, American Institute of Physics, 2008, 103, pp.073703-1-5. ⟨10.1063/1.2901182⟩. ⟨hal-00357380⟩
  • L. Jdira, K. Overgaag, R. Stiufiuc, B. Grandidier, C. Delerue, et al.. Linewidth of resonances in scanning tunneling spectroscopy. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2008, 77, pp.205308-1-11. ⟨10.1103/PhysRevB.77.205308⟩. ⟨hal-00357367⟩
  • G. Allan, C. Delerue. Energy transfer between semiconductor nanocrystals : validity of Förster's theory. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2007, 75, pp.195311-1-8. ⟨10.1103/PhysRevB.75.195311⟩. ⟨hal-00283123⟩
  • J.J. Peterson, L. Huang, C. Delerue, G. Allan, T.D. Krauss. Uncovering forbidden optical transitions in PbSe nanocrystals. Nano Letters, American Chemical Society, 2007, 7, pp.3827-3831. ⟨10.1021/nl072487g⟩. ⟨hal-00283185⟩
  • M. Diarra, Y.M. Niquet, C. Delerue, G. Allan. Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2007, 75, pp.045301-1-4. ⟨10.1103/PhysRevB.75.045301⟩. ⟨hal-00283119⟩
  • M. Dubois, C. Delerue, A. Rubio. Adsorption and electronic excitation of biphenyl on Si(100): a theoretical STM analysis. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2007, 75, pp.041302-1-4. ⟨10.1103/PhysRevB.75.041302⟩. ⟨hal-00283120⟩
  • Maxime Berthe, A. Urbieta, L. Perdigão, B. Grandidier, D. Deresmes, et al.. Electron transport via local polarons at interface atoms. Physical Review Letters, American Physical Society, 2006, 97, pp.206801/1-4. ⟨hal-00127839⟩
  • C. Delerue, G. Allan, C. Reynaud, O. Guillois, G. Ledoux, et al.. Multiexponential photoluminescence decay in indirect-gap semiconductor nanocrystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2006, 73, pp.235318 1-4. ⟨10.1103/PhysRevB.73.235318⟩. ⟨hal-00092072⟩
  • C. Delerue, G. Allan. Effective dielectric constant of nanostructured Si layers. Applied Physics Letters, American Institute of Physics, 2006, 88, pp.173117-1-3. ⟨hal-00127832⟩
  • G. Allan, C. Delerue. Role of impact ionization in multiple exciton generation in PbSe nanocrystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2006, 73, pp.205423-1-5. ⟨hal-00127843⟩
  • C. Delerue, G. Allan, C. Reynaud, O. Guillois, O. Ledoux, et al.. Multiexponential photoluminescence decay in indirect-gap semiconductor nanocrystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2006, 73, pp.235318-1-4. ⟨hal-00127844⟩
  • F. Cleri, S. Letardi, C. Delerue. Screening and surface states in molecular monolayers adsorbed on silicon. Journal of Physical Chemistry B, American Chemical Society, 2006, 110, pp.11496-11503. ⟨hal-00127845⟩
  • Y.M. Niquet, A. Lherbier, N.H. Quang, M.V. Fernandez-Serra, X. Blase, et al.. Electronic structure of semiconductor nanowires. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2006, 73, pp.165319-1-13. ⟨hal-00127831⟩
  • D. Vuillaume, S. Lenfant, D. Guerin, C. Delerue, C. Petit, et al.. Electronic properties of organic monolayers and molecular devices. Pramana - Journal of Physics, Indian Academy of Sciences/Springer, 2006, 67, pp.17-32. ⟨hal-00127117⟩
  • M. Dubois, L. Perdigao, C. Delerue, G. Allan, B. Grandidier, et al.. Scanning tunneling microscopy and spectroscopy of reconstructed Si(100) surfaces. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2005, 71, pp.165322-1-10. ⟨hal-00126420⟩
  • C. Delerue, G. Allan, Y.M. Niquet. Collective excitations in charged nanocrystals and in close-packed arrays of charged nanocrystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2005, 72, pp.195316-1-6. ⟨hal-00126239⟩
  • A.F. van Driel, G. Allan, C. Delerue, P. Lodahl, W.L. Vos, et al.. Frequency-dependent spontaneous emission rate from CdSe and CdTe nanocrystals : influence of dark states. Physical Review Letters, American Physical Society, 2005, 95, pp.236804/1-4. ⟨hal-00126425⟩
  • M. Dubois, C. Delerue, G. Allan. Scanning tunneling microscopy and spectroscopy of conjugated oligomers weakly bonded on Si(100) surfaces : a theoretical study. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2005, 71, pp.165435-1-6. ⟨hal-00126419⟩
  • Z. Hens, B. Grandidier, D. Deresmes, G. Allan, C. Delerue, et al.. Evolution of the density of states from a two- to a zero-dimensional semiconductor. EPL - Europhysics Letters, European Physical Society/EDP Sciences/Società Italiana di Fisica/IOP Publishing, 2004, 65, pp.809-815. ⟨hal-00141246⟩
  • L. Perdigao, D. Deresmes, B. Grandidier, M. Dubois, C. Delerue, et al.. Semiconducting surface reconstruction of p-type Si(100) substrates at 5K. Physical Review Letters, American Physical Society, 2004, 92, pp.216101/1-4. ⟨hal-00141285⟩
  • G. Allan, C. Delerue. Confinement effects in PbSe quantum wells and nanocrystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2004, 70, pp.245321/1-9. ⟨hal-00141253⟩
  • Z. Hens, D. Vanmaekelbergh, E.S. Kooij, H. Wormeester, G. Allan, et al.. Effect of quantum confinement on the dielectric constant of PbSe. Physical Review Letters, American Physical Society, 2004, 92, pp.026808/1-4. ⟨hal-00141244⟩
  • Gauthier Mahieu, Bruno Grandidier, Didier Stiévenard, Christophe Krzeminski, Christophe Delerue, et al.. Adsorption behavior of conjugated {C}3-oligomers on Si(100) and HOPG surfaces. Langmuir, American Chemical Society, 2003, 19 (8), pp.3350-3356. ⟨10.1021/la026907n⟩. ⟨hal-00688536⟩
  • C. Delerue, G. Allan, M. Lannoo. Dimensionality-dependent self energy corrections and exchange-correlation potential in semiconductor nanostructures. Physical Review Letters, American Physical Society, 2003, 90, pp.076803/1-4. ⟨hal-00146609⟩
  • D. Vanmaekelbergh, A.L. Roest, A. Germeau, J.J. Kelly, E.A. Meulenkamp, et al.. Reply to. Physical Review Letters, American Physical Society, 2003, 91, pp.169704/1. ⟨hal-00146617⟩
  • S. Lenfant, C. Krzeminski, C. Delerue, G. Allan, D. Vuillaume. Molecular rectifying diodes from self-assembly on silicon. Nano Letters, American Chemical Society, 2003, 3, pp.741-746. ⟨hal-00146156⟩
  • A. Germeau, A.L. Roest, D. Vanmaekelbergh, G. Allan, C. Delerue, et al.. Optical transitions in few-electron artificial atoms strongly confined in ZnO nanocrystals. Physical Review Letters, American Physical Society, 2003, 90, pp.097401/1-4. ⟨hal-00146610⟩
  • C. Delerue, G. Allan, M. Lannoo. Concept of dielectric constant for nanosized systems. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2003, 68, pp.115411-1-4. ⟨hal-00146590⟩
  • V. Ranjan, G. Allan, C. Priester, C. Delerue. Self-consistent calculations of the optical properties of GaN quantum dots. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2003, 68, pp.115305/1-7. ⟨hal-00146611⟩
  • G. Mahieu, B. Grandidier, D. Stievenard, C. Krzeminski, C. Delerue, et al.. Adsorption behavior of conjugated (C)3-oligomers on Si(100) and HOPG surfaces. Langmuir, American Chemical Society, 2003, 19, pp.3350-3356. ⟨hal-00146588⟩
  • Y.M. Niquet, C. Delerue, G. Allan, M. Lannoo. Interpretation and theory of tunneling experiments on single nanostructures. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2002, 65, pp.165334/1-14. ⟨hal-00149663⟩
  • G. Allan, C. Delerue. Efficient intraband optical transitions in Si nanocrystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2002, 66, pp.233303/1-4. ⟨hal-00149664⟩
  • Y.M. Niquet, C. Delerue, M. Lannoo, G. Allan. Single-particle tunneling in semiconductor quantum dots. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2001, 64, pp.113305/1-4. ⟨hal-00152555⟩
  • G. Allan, C. Delerue, Y.M. Niquet. Luminescence polarization of silicon nanocrystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2001, 63, pp.205301/1-8. ⟨hal-00152554⟩
  • Bruno Grandidier, Jean-Philippe Nys, Didier Stiévenard, Christophe Krzeminski, Christophe Delerue, et al.. Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si (100) surface. Surface Science, Elsevier, 2001, 473 (1-2), pp.1-7. ⟨10.1016/S0039-6028(00)00946-8⟩. ⟨hal-00688535⟩
  • Y.M. Niquet, C. Delerue, M. Lannoo, G. Allan. Fermi-edge singularities in AlxGa1-xAs quantum wells: extrinsic versus many-body scattering processes. Physical Review Letters, American Physical Society, 2001, 87, 24, pp.249903. ⟨hal-00018594⟩
  • C. Krzeminski, C. Delerue, G. Allan. Tight-binding description of the electronic response of a molecular device to an applied voltage. Journal of Physical Chemistry B, American Chemical Society, 2001, 105, pp.6321-6323. ⟨hal-00152557⟩
  • B. Grandidier, J.P. Nys, D. Stievenard, C. Krzeminski, C. Delerue, et al.. Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(100) surface. Surface Science, Elsevier, 2001, 473, 1-2, pp.1-7. ⟨hal-00018576⟩
  • C. Delerue, M. Lannoo, G. Allan. Tight binding for complex semiconductor systems.. physica status solidi (b), Wiley, 2001, 227, 1, pp.115-149. ⟨hal-00018572⟩
  • C. Delerue, G. Allan, M. Lannoo. Electron-phonon coupling and optical transitions for indirect-gap semiconductor nanocrystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2001, 64, pp.193402/1-4. ⟨hal-00152538⟩
  • L. Tsybeskov, G.F. Grom, R. Krishnan, L. Montes, P.M. Fauchet, et al.. Frequency-resolvel tunnel spectroscopy in nanocrystalline silicon superlattices. EPL - Europhysics Letters, European Physical Society/EDP Sciences/Società Italiana di Fisica/IOP Publishing, 2001, 55, pp.552-558. ⟨hal-00152534⟩
  • C. Delerue, M. Lannoo, G. Allan. Electron-phonon coupling and optical transitions for indirect-gap semiconductor nanocrystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2001, 64, 19, pp.193402/1-4. ⟨hal-00018571⟩
  • C. Krzeminski, C. Delerue, G. Allan, D. Vuillaume, R. Metzger. Theory of electrical rectification in a molecular monolayer. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2001, 64, 8, pp.085405. ⟨hal-00018578⟩
  • G. Allan, C. Delerue, Y.M. Niquet. Luminescence polarization of silicon nanocrystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2001, 63, 20, pp.205301/1-8. ⟨hal-00018570⟩
  • C. Krzeminski, C. Delerue, G. Allan, D. Vuillaume, R. Metzger. Theory of electrical rectification in a molecular monolayer. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2001, 64, pp.085405/1-6. ⟨hal-00152558⟩
  • C. Delerue, M. Lannoo, G. Allan. Tight binding for complex semiconductor systems. physica status solidi (b), Wiley, 2001, 227, pp.115-149. ⟨hal-00152556⟩
  • B. Grandidier, J.P. Nys, D. Stievenard, C. Krzeminski, C. Delerue, et al.. Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(100) surface. Surface Science, Elsevier, 2001, 473, pp.1-7. ⟨hal-00152539⟩
  • L. Tsybeskov, G.F. Grom, R. Krishnan, L. Montes, P.M. Fauchet, et al.. Resonant tunneling in partially disordered silicon nanostructures. EPL - Europhysics Letters, European Physical Society/EDP Sciences/Società Italiana di Fisica/IOP Publishing, 2001, 55, pp.552-558. ⟨hal-00250423⟩
  • Christophe Krzeminski, Christophe Delerue, Guy Allan. Tight binding description of the electronic response of a molecular device to an applied voltage. Journal of Physical Chemistry B, American Chemical Society, 2001, 105 (27), pp.6321. ⟨10.1021/jp011263y⟩. ⟨hal-00604398⟩
  • Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, R. Metzger. Theory of electrical rectification in a molecular monolayer. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2001, 64 (8), pp.085405. ⟨10.1103/PhysRevB.64.085405⟩. ⟨hal-00604397⟩
  • Y.M. Niquet, G. Allan, C. Delerue, M. Lannoo. Quantum confinement in germanium nanocrystals. Applied Physics Letters, American Institute of Physics, 2000, 77, pp.1182-1184. ⟨hal-00158666⟩
  • C. Delerue, M. Lannoo, G. Allan. Excitonic and quasiparticle gaps on Si nanocrystals. Physical Review Letters, American Physical Society, 2000, 84, pp.2457-2460. ⟨hal-00158640⟩
  • G. Allan, Y.M. Niquet, C. Delerue. Quantum confinement energies in zinc-blende III-V and diamond IV semiconductors. Applied Physics Letters, American Institute of Physics, 2000, 77, pp.639-641. ⟨hal-00158665⟩
  • G. Allan, C. Delerue, M. Lannoo. Nature of impurity states in doped amorphous silicon. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2000, 61, pp.10206-10210. ⟨hal-00158663⟩
  • X. de la Broïse, C. Delerue, M. Lannoo, B. Grandidier, D. Stievenard. Theory of scanning tunneling microscopy of defects on semiconductors surfaces. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2000, 61, pp.2138-2145. ⟨hal-00158951⟩
  • B. Grandidier, J.P. Nys, C. Delerue, D. Stievenard, Y. Higo, et al.. Atomic-scale study of GaMnAs/GaAs. Applied Physics Letters, American Institute of Physics, 2000, 77, pp.4001-4003. ⟨hal-00158645⟩
  • B. Grandidier, X. de la Broïse, D. Stievenard, C. Delerue, M. Lannoo, et al.. Defect assisted tunneling current : a revised interpretation of scanning tunneling spectroscopy measurements. Applied Physics Letters, American Institute of Physics, 2000, 76, pp.3142-3144. ⟨hal-00158642⟩
  • Y.M. Niquet, C. Delerue, G. Allan, M. Lannoo. Method for tight binding parametrization : application to silicon nanostructures. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2000, 62, pp.5109-5116. ⟨hal-00158664⟩
  • Christophe Krzeminski, Christophe Delerue, Guy Allan, Vincent Haguet, Didier Stiévenard, et al.. Theoretical characterization of the electronic properties of extended thienylenevinylene oligomers. Journal of Chemical Physics, American Institute of Physics, 1999, 111 (14), pp.6643-6649. ⟨10.1063/1.480012⟩. ⟨hal-00633591⟩
  • Irina Mihalcescu, J.C. Vial, A. Bsiesy, F. Muller, R. Romestain, et al.. Saturation and voltage quenching of porous-silicon luminescence and the importance of the Auger effect. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1995, 51 (24), pp.17605 - 17613. ⟨10.1103/PhysRevB.51.17605⟩. ⟨hal-01628598⟩
  • C. Delerue, M. Lannoo, G. Allan, E. Martin, Irina Mihalcescu, et al.. Auger and Coulomb Charging Effects in Semiconductor Nanocrystallites. Physical Review Letters, American Physical Society, 1995, 75 (11), pp.2228 - 2231. ⟨10.1103/PhysRevLett.75.2228⟩. ⟨hal-01628592⟩
  • C. Delerue, E. Martin, J.-F. Lampin, G. Allan, M. Lannoo. Luminescence of silicon crystallites. Journal de Physique IV Proceedings, EDP Sciences, 1993, 03 (C5), pp.C5-359-C5-362. ⟨10.1051/jp4:1993575⟩. ⟨jpa-00251662⟩

Conference papers122 documents

  • N.A. Franchina Vergel, C. Post, Francois Vaurette, Y. Lambert, D. Yarekha, et al.. Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells: [Invited]. 5th IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2021, Apr 2021, Chengdu, China. pp.1-3, ⟨10.1109/EDTM50988.2021.9420884⟩. ⟨hal-03261329⟩
  • Christophe Delerue, P. Tim Prins, Daniel Vanmaekelbergh, Zeger Hens. Quantized optical absorption in quasi-2D semiconductors: Theory, comparison with experiments and open questions. nanoGe Fall Meeting 20, Oct 2020, Barcelone, Spain. ⟨hal-02977041⟩
  • Bruno Masenelli, M.K.H. Taha, Olivier Boisron, Patrice Mélinon, Christophe Delerue, et al.. Metallic ZnO nanocrystals for Mid IR plasmonics. EMN Barcelona Meeting on semiconductors-ICAS, Aug 2019, Barcelone, Spain. ⟨hal-02269801⟩
  • Bruno Masenelli, M.K.H. Taha, Olivier Boisron, Patrice Mélinon, Christophe Delerue, et al.. Metallic ZnO nanocrystals for Mid IR plasmonics: [Invited]. Nanomaterialstrends 2018, Univ. Cattolica del Sacro Cuore Brescia, Sep 2018, Brescia, Italy. ⟨hal-01875130⟩
  • Vincent Sallet, Corinne Sartel, Said Hassani, G. Amiri, Alain Lusson, et al.. Crystal facet engineering in Ga-doped ZnO nanowires for Mid-IR plasmonics. TCM2018, Oct 2018, Crete, Greece. ⟨hal-02010197⟩
  • Vincent Sallet, Corinne Sartel, Said Hassani, G. Amiri, Alain Lusson, et al.. ZnO nanowire facet transformation induced by Ga doping. IWZnO 2018, Sep 2018, varsovie, Poland. ⟨hal-02010195⟩
  • Bruno Masenelli, M.K.H. Taha, Olivier Boisron, B. Canut, Patrice Melinon, et al.. Ga and Al degeneratly doped ZnO Nanocrystals for Mid IR plasmonics. IWZnO2018, Sep 2018, Varsovie, Poland. ⟨hal-01875129⟩
  • G. Mugny, F.G. Pereira, D. Rideau, F. Triozon, Y.M. Niquet, et al.. A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. 2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.424-427, ⟨10.1109/ESSDERC.2016.7599676⟩. ⟨hal-02065220⟩
  • G. Mugny, G. Pereira, D. Rideau, F. Triozon, Y.M. Niquet, et al.. A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, France. pp.424-427. ⟨hal-02143431⟩
  • Jing Li, Yann-Michel Niquet, Christophe Delerue. Manipulating spin polarization and carrier mobility in zigzag graphene ribbons using an electric field. 2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, France. pp.36.3.1-36.3.4. ⟨hal-02143466⟩
  • G. Mugny, D. Rideau, F. Triozon, Y.-M. Niquet, C. Kriso, et al.. Full-zone k · p parametrization for III-As materials. 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, France. pp.28-31. ⟨hal-02138887⟩
  • Gabriel Mugny, D. Rideau, F. Triozon, Yann-Michel Niquet, F.G. Pereira, et al.. Image and many-body effects in ultra-thin gate insulator MOSFET with In0.53Ga0.47As channel material and their influence on gate leakage current. 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 5 p. ⟨hal-01020291⟩
  • Cristiane Morais Smith, Wouter Beugeling, Efterpi Kalesaki, Yann-Michel Niquet, Christophe Delerue, et al.. Room-temperature quantum spin Hall effect in HgTe honeycomb superlattices. American Physical Society March Meeting, APS March Meeting 2014, Session B31 - Focus Session : Computational Discovery and Design of New Materials II, 2014, Denver, CO, United States. ⟨hal-00922589⟩
  • J. Li, Christophe Delerue, Yann-Michel Niquet, F. Triozon, L. Genovese. A computational model for the investigation of phonon-limited charge transport in 2D systems. 17th International Workshop on Computational Electronics, IWCE 2014, 2014, Paris, France. paper P48, 227-228, to be published by IEEE. ⟨hal-01005699⟩
  • E. Kalesaki, C. Delerue, C. Morais Smith, W. Beugeling, G. Allan, et al.. Semiconductors with dimensionality between zero and two. Workshop "Designing Dirac carriers in semiconductor honeycomb superlattices", 2014, Utrecht, Netherlands. ⟨hal-01015322⟩
  • Guy Allan, Christophe Delerue, A. Al-Otaify, D.J. Binks, S.V. Kershaw, et al.. Optical properties of HgTe nanocrystals. European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium F - Established and emerging nanocolloids : from synthesis & characterization to applications, 2014, Lille, France. ⟨hal-01015327⟩
  • Pieter Geiregat, Arjan Houtepen, Michiel Aerts, Christophe Delerue, Zeger Hens, et al.. Hyperspectral analysis of ultrafast hot carrier dynamics in Pb-chalcogenide nanocrystals : a case for slow cooling. 8th International Conference on Quantum Dots, QD 2014, 2014, Pisa, Italy. ⟨hal-01015211⟩
  • E. Kalesaki, Christophe Delerue, C. Morais Smith, W. Beugeling, Guy Allan, et al.. From semiconductor nanocrystals to artificial graphene and topological insulator. European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium F - Established and emerging nanocolloids : from synthesis & characterization to applications, 2014, Lille, France. ⟨hal-00966143⟩
  • Christophe Delerue. [Invited] Phonon-limited transport in Si, Ge, Ge/Si nanowires. Nanowires 2014, 2014, Eindhoven, Netherlands. ⟨hal-01044673⟩
  • Pieter Geiregat, Arjan J. Houtepen, Laxmi Kishore Sagar, Christophe Delerue, Ferdinand C. Grozema, et al.. Near-thresholdless optical gain using colloidal HgTe quantum dots. 30 years of Colloidal Quantum Dots, 2014, Paris, France. ⟨hal-01015227⟩
  • E. Kalesaki, Christophe Delerue, C. Morais Smith, W. Beugeling, Guy Allan, et al.. [Invited] From semiconductor nanocrystals to artificial graphene and topological insulator. Colloidal Quantum Dots and Nanocrystals, CQDN 2014, 2014, Manchester, United Kingdom. ⟨hal-01044694⟩
  • X. Pi, Christophe Delerue. Phosphorus-hyperdoped Si nanocrystals : a model for localized surface plasmon resonance. European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961394⟩
  • E. Kalesaki, M.P. Boneschanscher, J.J. Geuchies, Christophe Delerue, C. Morais Smith, et al.. Preparation and study of 2-D semiconductors with Dirac type bands due to the honeycomb nanogeometry. SPIE Photonics West, OPTO 2014, Conference 8981 - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 2014, San Francisco, CA, United States. ⟨10.1117/12.2042882⟩. ⟨hal-00964400⟩
  • Pieter Geiregat, Arjan Houtepen, Laxmi Kishore Sagar, Christophe Delerue, Dries van Thourhout, et al.. Thresholdless optical gain using colloidal HgTe nanocrystals. Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. paper FTh4C.4, 2 p., ⟨10.1364/CLEO_QELS.2014.FTh4C.4⟩. ⟨hal-00974546⟩
  • W.H. Evers, D. Mitoraj, M. Dijkstra, C. Delerue, E. Kalesaki, et al.. [Invited] Nanocrystal self-assembly as a route to atomically coherent 2D semiconductor superlattices with Dirac-type charge carriers. Workshop Supranano : Self-Assemblies, 2013, Paris, France. ⟨hal-00878824⟩
  • Y.M. Niquet, M. Diarra, X. Pi, G. Allan, C. Delerue. [Invited] Electronic doping : from bulk semiconductors to nanocrystals. Workshop on Coupling between Nanocrystals and Dopants, GdR 3531 NACRE, 2013, Villiers-sur-Mer, France. ⟨hal-00878825⟩
  • Y.M. Niquet, J. Li, D. Rideau, B. Videau, C. Krzeminski, et al.. [Invited] Strain effects on carrier mobility in Si and Ge nanowires. 5ème Assemblée Générale du GdR Nanofils Semiconducteurs, 2013, Saint-Martin-de-Londres, France. ⟨hal-00811810⟩
  • E. Kalesaki, M.P. Boneschanscher, J.J. Geuchies, C. Delerue, C. Morais Smith, et al.. Graphène artificiel à fort couplage spin-orbite formé par auto-assemblage de nanocristaux de semiconducteurs. Journées Boîtes Quantiques 2013, JBQ 2013, 2013, Paris, France. ⟨hal-00922582⟩
  • E. Kalesaki, M.P. Boneschanscher, J.J. Geuchies, C. Delerue, C. Morais Smith, et al.. [Invited] Artificial graphene superlattices made of semiconductor nanocrystals. Graphene Day, 2013, Utrecht, Netherlands. ⟨hal-00823435⟩
  • E. Kalesaki, M.P. Boneschanscher, J.J. Geuchies, C. Delerue, C. Morais Smith, et al.. Graphène artificiel à fort couplage spin-orbite formé par auto-assemblage de nanocristaux de semiconducteurs. Réunion plénière du GDR 3325 CoDFT, 2013, Guidel-Plages, France. ⟨hal-00819693⟩
  • K. Smaali, S. Lenfant, S. Godey, D. Vuillaume, T.K. Tran, et al.. A crown-ether-derivatized oligothiophene doubly attached on gold surface as cation-binding electrical switchable molecular junction. 6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797674⟩
  • Y.M. Niquet, C. Delerue, V.H. Nguyen, C. Krzeminski, F. Triozon. Transport properties of strained silicon nanowires. 42nd European Solid-State Device Research Conference, ESSDERC 2012, 2012, Bordeaux, France. pp.session C3L-G, 290-293, ⟨10.1109/ESSDERC.2012.6343390⟩. ⟨hal-00801132⟩
  • Y.M. Niquet, J. Li, V.H. Nguyen, F. Triozon, W. Zhang, et al.. Atomistic calculations of the mobility in ultimate Si (Ge) nanowires and carbon nanotubes. 6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797753⟩
  • C. Delerue, G. Allan. [Invité] Multi-excitons dans les nanostructures de semiconducteurs. Deuxième édition des Journées Nationales du Photovoltaïque, JNPV 2012, 2012, Chantilly, France. ⟨hal-00797752⟩
  • Y.M. Niquet, C. Delerue. Band offsets, wells and barriers in nanowire heterostructures : is the simple ''square wells and barriers'' model always valid ?. Materials Research Society Spring Meeting, MRS Spring 2012, Symposium AA : Inorganic Nanowires and Nanotubes - Synthesis, Properties, and Device Applications, 2012, San Francisco, CA, United States. ⟨hal-00797756⟩
  • Y.M. Niquet, C. Delerue, D. Rideau. Electron-phonon scattering in silicon nanowires. Materials Research Society Spring Meeting, MRS Spring 2012, Symposium AA : Inorganic Nanowires and Nanotubes - Synthesis, Properties, and Device Applications, 2012, San Francisco, CA, United States. ⟨hal-00798125⟩
  • C. Delerue, G. Allan. [Invited] Carrier multiplication in quantum dots for more efficient solar cells. 4èmes Journées de Physique Théorique, 2012, Grenoble, France. ⟨hal-00797754⟩
  • A. Al-Otaify, D. Binks, S. Kershaw, G. Allan, C. Delerue. Ultrafast transient absorption spectroscopy of HgTe quantum dots. Optics & Photonics joint with Quantum Electronics & Photonics, Photon 12/QEP-20, 2012, Durham, United Kingdom. ⟨hal-00798255⟩
  • Y.M. Niquet, C. Delerue. Influence of strains on the electron and hole mobility in silicon nanowires. 15th International Workshop on Computational Electronics, IWCE-15, 2012, Madison, WI, United States. pp.203-204. ⟨hal-00801139⟩
  • Y.M. Niquet, C. Delerue. Band offsets : nano is not bulk. 15th International Workshop on Computational Electronics, IWCE-15, 2012, Madison, WI, United States. pp.3-4. ⟨hal-00801124⟩
  • Y.M. Niquet, C. Delerue, D. Rideau. Orientational and strain dependence of the mobility in silicon nanowires. 13th International Conference on Ultimate Integration on Silicon, ULIS 2012, 2012, Grenoble, France. pp.49-52, ⟨10.1109/ULIS.2012.6193354⟩. ⟨hal-00801131⟩
  • T.H. Nguyen, G. Mahieu, Maxime Berthe, B. Grandidier, C. Delerue, et al.. Coulomb energy determination of a single Si dangling bond. Herodot Summer School, 2011, Cargese, France. ⟨hal-00807579⟩
  • T.H. Nguyen, G. Mahieu, Maxime Berthe, B. Grandidier, C. Delerue, et al.. Mesure de l'énergie de Coulomb à l'échelle atomique. 14ème Forum des Microscopies à Sonde Locale, 2011, Ecully, France. ⟨hal-00807249⟩
  • T.H. Nguyen, G. Mahieu, Maxime Berthe, B. Grandidier, C. Delerue, et al.. Coulomb energy determination of a single Si dangling bond. Workshop on Statistical Physics and Low Dimensional Systems, SPLDS 2011, 2011, Nancy, France. ⟨hal-00807228⟩
  • Y.M. Niquet, C. Delerue. Improved Green's functions algorithms for the modeling of semiconductor nanostructures and devices. Materials Research Society Spring Meeting, MRS Spring 2011, Symposium YY : Computational semiconductor materials science, 2011, San Francisco, CA, United States. ⟨hal-00807250⟩
  • W. Zhang, M.P. Persson, H. Mera, C. Delerue, Y.M. Niquet, et al.. Impurity and phonon scattering in silicon nanowires. American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States. ⟨hal-00579042⟩
  • Y.M. Niquet, C. Delerue. Assessment of the notions of band offsets, wells, and barriers at nanoscale semiconductor heterojunctions. Materials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Functional Nanowires and Nanotubes, 2011, Boston, MA, United States. ⟨hal-00807232⟩
  • C. Delerue, G. Allan. Optimization of carrier multiplication in quantum dots for more efficient solar cells. Workshop on Semiconductor Nanostructures for Photovoltaics, 2011, Hangzhou, China. ⟨hal-00807253⟩
  • I. Moreels, L. Wirtz, C. Delerue, Z. Hens. A Kramers-Krönig analysis of the absorbance spectrum of colloidal quantum dots : calculation of the complex refractive index. European Materials Research Society Spring Meeting, E-MRS Spring 2011, Symposium G : Semiconductor nanostructures towards electronic and optoelectronic device applications, 2011, Nice, France. ⟨hal-00807230⟩
  • C. Delerue, G. Allan. Optimization of carrier-multiplication for more efficient solar cells : the case of α-Sn quantum dots. Materials Research Society Fall Meeting, MRS Fall 2011, Symposium I : Fundamental processes of solar harvesting in excitonic solar cells, 2011, Boston, MA, United States. ⟨hal-00807718⟩
  • C. Delerue, G. Allan. [Invited] Carrier-multiplication in semiconductor nanocrystals : a long controversy. 3rd Energy Research Initiative Symposium : Energy for the 21st Century, 2011, Rochester, NY, United States. ⟨hal-00807221⟩
  • W.X. Zhang, M.P. Persson, H. Mera, Y.M. Niquet, C. Delerue, et al.. Impurity and phonon scattering in silicon nanowires. Materials Research Society Spring Meeting, MRS Spring 2011, Symposium EE : Semiconductor nanowires - From fundamentals to applications, 2011, San Francisco, CA, United States. ⟨hal-00807586⟩
  • Y.M. Niquet, L. Genovese, C. Delerue, T. Deutsch. Ab initio calculation of the binding energy of impurities in semiconductors : application to silicon nanowires. Materials Research Society Spring Meeting, MRS Spring 2011, Symposium YY : Computational semiconductor materials science, 2011, San Francisco, CA, United States. ⟨hal-00807580⟩
  • D. Rideau, W. Zhang, Y.M. Niquet, C. Delerue, C. Tavernier, et al.. Electron-phonon scattering in Si and Ge : from bulk to nanodevices. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011, 2011, Osaka, Japan. pp.47-50, ⟨10.1109/SISPAD.2011.6035046⟩. ⟨hal-00800089⟩
  • I. Moreels, G. Allan, C. Delerue, Z. Hens. Experimental and theoretical comparison of the optical properties of colloidal lead salt quantum dots. Nanoscience with Nanocrystals International Conference, NaNaX4, 2010, Munich, Germany. ⟨hal-00574397⟩
  • C. Delerue. Quantamonde : QUANTum and Atomistic MOdeling of NanoDEvices. Journées du Réseau National en Nanosciences et en Nanotechnologies, J3N 2010, 2010, Lille, France. ⟨hal-00574415⟩
  • C. Delerue, G. Allan. Semiconductor nanostructures : recent theoretical results. Workshop on Nanostructures, Nano-optics and Nano-technologies, 3N Workshop, 2010, Porquerolles, France. ⟨hal-00574390⟩
  • W. Zhang, C. Delerue, Y.M. Niquet, G. Allan, E. Wang. Phonon scattering in silicon nanowires. Workshop of the GDR coDFT : Electron-phonon interaction in metals, superconductors and semiconducting nanostructures, 2010, Paris, France. ⟨hal-00574391⟩
  • C. Delerue, G. Allan. Fast exciton relaxation and multiple exciton generation (MEG) in semiconductor nanocrystals : the role of defects. American Physical Society March Meeting, 2009 APS March Meeting, Focus Session : Nanomaterials for Energy Applications I, 2009, Pittsburgh, PA, United States. ⟨hal-00575339⟩
  • C. Delerue, G. Allan. Multi-exciton generation in bulk and nanocrystalline semiconductors : mechanism, efficiency, and interest for solar cells ?. French & American Young Engineering Scientists Symposium 2009, YESS Nano 2009, 2009, Paris, France. ⟨hal-00575706⟩
  • K. Overgaag, G. Mahieu, B. Grandidier, C. Delerue, G. Allan, et al.. Contribution à l'élargissement des pics de résonance de boîtes quantiques PbSe étudiées par spectroscopie tunnel. Forum des Microscopies à Sonde Locale, 2009, Hardelot, France. ⟨hal-00575393⟩
  • C. Delerue. Quantum modelling of electronic properties of impurities in nanowires. AFSiD European Project Meeting (invited seminar), 2009, Delft, Netherlands. ⟨hal-00575358⟩
  • P. Liljeroth, Z. Sun, I. Swart, C. Delerue, D. Vanmaekelbergh. Orbital-resolved polaron states in CdSe dots and rods probed by scanning tunnelling spectroscopy. American Physical Society March Meeting, 2009 APS March Meeting, Focus session : Transport Properties of Nanostructures I : Surface Assemblies and Films, 2009, Pittsburgh, PA, United States. ⟨hal-00575359⟩
  • C. Delerue, G. Allan. Influence of the electronic structure and the multi-exciton spectral density on the multiple exciton generation in semiconductor nanocrystals. American Physical Society March Meeting, 2008, New Orleans, LA, United States. ⟨hal-00361973⟩
  • K. Overgaag, B. Grandidier, C. Delerue, D. Vanmaekelbergh. Tunneling spectroscopy of semiconductor nanocrystals in superlattices. American Chemical Society National Meeting, 2008, New Orleans, LA, United States. ⟨hal-00362015⟩
  • K. Overgaag, B. Grandidier, P. Liljeroth, C. Delerue, D. Vanmaekelbergh. Tunneling spectroscopy of semiconductor nanocrystals in superlattices. Ecole thématique du CNRS ‘Nanoobjects in living cell, from physics to physiology', 2008, Villeneuve d'Ascq, France. ⟨hal-00362018⟩
  • C. Delerue, M. Diarra, Y.M. Niquet, G. Allan. [Invité] Nanofils de semiconducteurs : effets de confinement quantique et diélectrique. 22èmes Journées Surfaces-Interfaces, JSI 2008, 2008, Grenoble, France. ⟨hal-00811725⟩
  • M. Diarra, C. Delerue, Y.M. Niquet, G. Allan. Electronic properties of doped semiconductor nanowires. CECAM-PsiK Workshop on Structural, Electronic and Transport Properties of Quantum Wires, 2008, Lyon, France. ⟨hal-00811726⟩
  • G. Mahieu, B. Grandidier, C. Delerue. Tunneling spectroscopy of semiconductor nanocrystals in superlattices. Workshop on Statistical Physics and Low Dimensional Systems, 2008, Nancy, France. ⟨hal-00362016⟩
  • G. Allan, C. Delerue. Influence of the electronic structure and the multi-exciton spectral density on the multiple exciton generation in semiconductor nanocrystals. CECAM Workshop on Critical Materials Issues in Photovoltaics : searching for solutions via theory and simulations, 2008, Lausanne, Switzerland. ⟨hal-00811727⟩
  • Y.M. Niquet, A. Lherbier, M. Persson, F. Triozon, S. Roche, et al.. Electronic and transport properties of semiconductor nanowires : theory and simulation. International Conference on One-dimensional Nanomaterials, 2007, Malmö/Lund, Sweden. ⟨hal-00367403⟩
  • Y.M. Niquet, A. Lherbier, M. Persson, F. Triozon, S. Roche, et al.. Electronic, optical and transport properties of semiconductor nanowires : theory and simulations. 397th Wilhelm and Else Heraeus Seminar on Semiconducting Nanowires : Physics, Materials and Devices, 2007, Bad Honnef, Germany. ⟨hal-00367404⟩
  • B. Grandidier, R. Stiufiuc, Maxime Berthe, C. Delerue, D. Deresmes, et al.. Réseau organique, atome artificiel et liaison pendante silicium : apport de la spectroscopie STM. 10èmes Journées de la Matière Condensée, JMC10, 2006, Toulouse, France. ⟨hal-00127920⟩
  • Maxime Berthe, A. Urbieta, R. Stiufiuc, B. Grandidier, D. Deresmes, et al.. Running current through a single non resonant quantum state in silicon. 4th International Conference on Scanning Probe Spectroscopy and 1st International Workshop on Spin-Polarized Scanning Tunneling Microscopy, SPS'06 SPSTM-1, 2006, Hamburg, Germany. ⟨hal-00127890⟩
  • Maxime Berthe, A. Urbieta, R. Stiufiuc, B. Grandidier, D. Deresmes, et al.. Running current through a single non resonant quantum state in silicon. European Conference on Surface Science, ECOSS 24, 2006, Paris, France. ⟨hal-00127916⟩
  • M. Diarra, Y.M. Niquet, C. Delerue, G. Allan. Electronic structure of donor and acceptor impurities in semiconductor nanowires. Material Research Society Fall Meeting, 2006, Boston, MA, United States. ⟨hal-00127892⟩
  • C. Delerue, G. Allan, C. Reynaud, O. Guillois, G. Ledoux, et al.. Theory of multi-exponential photoluminescence decay of indirect gap semiconductor nanocrystals. Material Research Society Fall Meeting, 2006, Boston, MA, United States. ⟨hal-00127919⟩
  • C. Delerue, G. Allan, Y.M. Niquet. Optical properties and collective effects in charged arrays of semiconductor nanocrystals. European Materials Research Society Spring Meeting, Symposium A : Current Trends in Nanoscience–from Materials to Applications, 2006, Nice, France. ⟨hal-00244033⟩
  • G. Allan, C. Delerue. Impact ionization quantum yield in PbSe nanocrystals. Materials Research Society 2005 Fall Meeting, 2005, Boston, MA, United States. ⟨hal-00126443⟩
  • G. Allan, C. Delerue. Optical properties of CdTe and CdSe nanocrystals. American Physical Society March Meeting, 2005, Los Angeles, CA, United States. ⟨hal-00126440⟩
  • G. Allan, C. Delerue. Forster energy transfer between semiconductor nanocrystals. Materials Research Society 2005 Fall Meeting, 2005, Boston, MA, United States. ⟨hal-00126434⟩
  • C. Delerue, G. Allan, Y.M. Niquet. Theoretical study of radiative and non radiative recombination in semiconductor nanocrystals. Psi-k Conference, 2005, Schwäbisch Gmünd, Germany. ⟨hal-00126455⟩
  • C. Delerue, G. Allan. Spectroscopie de nanocristaux de semiconducteurs : enjeux récents, études théoriques. Congrès général de la Société Française de Physique, 2005, Lille, France. ⟨hal-00126454⟩
  • G. Allan, C. Delerue. Unusual quantum confinement effects in IV-VI materials. 2005, pp.687-690. ⟨hal-00126432⟩
  • C. Delerue, Y.M. Niquet, G. Allan. Collective excitations in charged nanocrystals. Materials Research Society 2005 Fall Meeting, 2005, Boston, MA, United States. ⟨hal-00126435⟩
  • C. Delerue, G. Allan. Simulation of semiconductor nanoparticles. American Physical Society March Meeting, 2005, Los Angeles, CA, United States. ⟨hal-00126441⟩
  • M. Dubois, C. Delerue, A. Rubio. Combining ab initio and semiempirical approaches for scanning tunneling microscopy simulations. Trends in Nanotechnology, TNT 2005, 2005, Oviedo, Spain. ⟨hal-00126433⟩
  • G. Allan, C. Delerue. Unusual quantum confinement in IV-VI materials. European Materials Research Society Spring Meeting, 2004, Strasbourg, France. ⟨hal-00141286⟩
  • C. Delerue, M. Lannoo, G. Allan. Quasi-particle gap, dielectric properties and electronic correlations in semiconductor nanostructures. Workshop on Theory and Modeling of Electronic Excitations in Nanoscience, NANOEXC2004, 2004, Acquafredda di Maratea, Italy. ⟨hal-00141287⟩
  • C. Delerue, G. Allan, M. Lannoo. Potentiel d'échange et de corrélation dans des nanostructures de semiconducteurs. Réunion du GDR-DFT, 2004, La Londe Les Maures, France. ⟨hal-00141288⟩
  • S. Lenfant, D. Vuillaume, C. Krzeminski, G. Allan, C. Delerue. Self-assembled molecular rectifying diodes on silicon. European Materials Research Society Spring Meeting, 2004, Strasbourg, France. ⟨hal-00140752⟩
  • Z. Hens, B. Grandidier, D. Deresmes, G. Allan, C. Delerue, et al.. Unusual density of states in brick-shaped PbSe nanocrystals. American Physical Society March Meeting, 2003, Austin, TX, United States. ⟨hal-00146641⟩
  • S. Lenfant, D. Vuillaume, C. Krzeminski, C. Delerue. Self-assembled molecular rectifying diodes. Materials Research Society Spring Meeting, 2003, San Francisco, CA, United States. ⟨hal-00146173⟩
  • C. Delerue, G. Allan, S. Lenfant, D. Vuillaume, C. Krzeminski. Charge transport in self-assembled molecular rectifying diodes on silicon. Workshop France-USA on Molecular-Scale Electronics, 2003, Paris, France. ⟨hal-00146645⟩
  • D. Vuillaume, S. Lenfant, C. Krzeminski, G. Allan, C. Delerue. Self-assembled molecular rectifying diodes on silicon : synthesis, experimental and theoretical charge transport studies. 226th American Chemical Society National Meeting - Fall 2003, 2003, New York, NY, United States. ⟨hal-00146383⟩
  • C. Delerue, S. Lenfant, C. Krzeminski, G. Allan, D. Vuillaume. Experimental and theoretical charge transport studies in self-assembled molecular rectifying diodes on silicon. Materials Research Society Fall Meeting, 2003, Boston, MA, United States. ⟨hal-00146176⟩
  • C. Delerue, S. Lenfant, C. Krzeminski, G. Allan, D. Vuillaume. Experimental and theoretical charge transport studies in self-assembled molecular rectifying diodes on silicon. French-USA Conference on Molecular-scale Electronics, 2003, Paris, France. ⟨hal-00146177⟩
  • S. Lenfant, D. Vuillaume, C. Krzeminski, G. Allan, C. Delerue, et al.. Self-assembled molecular rectifying diodes on silicon : synthesis, experimental and theoretical charge transport studies. 7th European Conference on Molecular Electronics, ECME 2003, 2003, Avignon, France. ⟨hal-00146179⟩
  • V. Ranjan, C. Delerue, G. Allan, C. Priester. Self-consistent tight-binding electronic structure of GaN/AlN pyramidal quantum dots. American Physical Society March Meeting, 2003, Austin, TX, United States. ⟨hal-00146640⟩
  • C. Delerue, G. Allan. The effect of quantum confinement on the optical properties of semiconductor nanocrystals. Materials Research Society Fall Meeting, 2003, Boston, MA, United States. ⟨hal-00146644⟩
  • M. Lannoo, C. Delerue, G. Allan, Y.M. Niquet. Confinement effects and tunneling through quantum dots. Symposium of Royal Society, 2002, London, United Kingdom. ⟨hal-00149686⟩
  • S. Lenfant, C. Krzeminski, C. Delerue, D. Vuillaume. Current rectification from sigma-pi self-assembled monolayers on silicon. 5th International Conference on Functionalized n-electron Systems, 2002, Ulm, Germany. ⟨hal-00148709⟩
  • C. Delerue, G. Allan, M. Lannoo, C. Krzeminski, Y.M. Niquet. Outils théoriques pour la structure électronique. Ecole thématique sur les nitrures, 2002, La Plagne, France. ⟨hal-00149679⟩
  • C. Delerue, G. Allan, M. Lannoo. Theory of silicon nanocrystals. NATO Advanced Research Workshop : Towards the first silicon laser, 2002, Trento, Italy. ⟨hal-00149682⟩
  • S. Lenfant, C. Krzeminski, C. Delerue, D. Vuillaume. Rectifying molecular diodes from self-assembly on silicon. Electronic Materials Conference, 2002, Santa Barbara, CA, United States. ⟨hal-00148725⟩
  • C. Delerue, G. Allan. Efficient and unusual intraband optical transitions in silicon nanocrystals. Materials Research Society Fall Meeting, 2002, Boston, MA, United States. ⟨hal-00149680⟩
  • C. Delerue, G. Allan, M. Lannoo. Propriétés optiques des nanostructures de Si. VIII Journées de la Matière Condensée, 2002, Marseille, France. ⟨hal-00149681⟩
  • Y.M. Niquet, C. Delerue, G. Allan, M. Lannoo. Theory of electronic transport in semiconductor nanostructures. Proceedings of the 2002 Materials Research Society Fall Meeting, Symposium F : Nanocrystalline Semiconductor Materials and Devices, 2002, Boston, MA, United States. ⟨hal-00149954⟩
  • A. Letoublon, M. Proietti, C. Priester, Hubert Renevier, C. Delerue. Study of InAs/InP using grazing incidence diffraction anomalous fine structure. Ecole Prédoctorale sur la Physique Mésoscopique, 2001, Les Houches, France. ⟨hal-00152576⟩
  • C. Delerue, G. Allan, M. Lannoo. Physique des nanostructures. Ecole Prédoctorale sur la Physique Mésoscopique, 2001, Les Houches, France. ⟨hal-00152580⟩
  • C. Delerue, G. Allan, M. Lannoo. Tight binding methods. Tutorial Courses 'Interface atomic level and properties of advanced materials', 2001, San Feliu de Guixols, Spain. ⟨hal-00152575⟩
  • C. Krzeminski, C. Delerue, G. Allan, D. Vuillaume. C16H33-Q-3CNQ, a molecular diode ?. Electron Transport on the Molecular Scale, 2001, Dresde, Germany. ⟨hal-00152559⟩
  • C. Krzeminski, C. Delerue, G. Allan, D. Vuillaume. C16H33-Q-3CNQ, a molecular diode ?. Electron Transport on the Molecular Scale, 2001, Dresden, Germany. ⟨hal-00152155⟩
  • C. Delerue, M. Lannoo, G. Allan. Excitonic and quasiparticle gaps in Si nanocrystals. CECAM Workshop on Excited States and Electronic Spectra, 2000, Lyon, France. ⟨hal-00158952⟩
  • C. Delerue, Y.M. Niquet, G. Allan, M. Lannoo. Propriétés et applications des nanocristaux de silicium et de germanium. 7èmes Journées de la Matière Condensée, 2000, Poitiers, France. ⟨hal-00158967⟩
  • C. Krzeminski, C. Delerue, G. Allan, D. Vuillaume, R.M. Metzger. Electronic structure and rectification properties of a molecular diode. Asia-Pacific Surface and Interface Analysis Conference, APSIAC 2000, 2000, Beijing, China. ⟨hal-00158953⟩
  • G. Allan, C. Delerue, M. Lannoo. Nature of impurity states in amorphous silicon. CECAM Workshop on Electronic and Optical Properties of Semiconducting Glasses, 2000, Lyon, France. ⟨hal-00158966⟩
  • Y.M. Niquet, C. Delerue, G. Allan, M. Lannoo. Theory of electronic transport in silicon nanostructures. Material Research Society Fall Meeting, 2000, Boston, MA, United States. ⟨hal-00158970⟩
  • Y.M. Niquet, C. Delerue, G. Allan, M. Lannoo. Confinement quantique dans des nanocristaux de silicium et de germanium. 7èmes Journées de la Matière Condensée, 2000, Poitiers, France. ⟨hal-00158950⟩
  • B. Grandidier, J.P. Nys, D. Stievenard, C. Krzeminski, C. Delerue, et al.. Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si (100) surface. Proceedings of the 47th International Symposium of the American Vacuum Society, AVS 2000, 2000, Boston, MA, United States. ⟨hal-00158959⟩
  • C. Krzeminski, C. Delerue, D. Vuillaume, G. Allan. Théorie du transport électronique d'une diode moléculaire à base de quinolinium tricyanoquinodimethanide. 7èmes Journées de la Matière Condensée, 2000, Poitiers, France. ⟨hal-00158948⟩
  • G. Allan, C. Delerue, M. Lannoo. From porous silicon to semiconductor quantum dots. Zhong Guan Cun for Condensed Matter Physics, 2000, Beijing, China. ⟨hal-00158971⟩

Poster communications1 document

  • Vincent Sallet, Corinne Sartel, Said Hassani, Alain Lusson, G. Amiri, et al.. Crystal facet engineering in MIR ZnO nanow. 34th ICPS, Jul 2018, Montpellier, France. ⟨hal-02010183⟩

Books1 document

  • Christophe Delerue, Michel Lannoo. Nanostructures: Theory and Modeling. Springer-Verlag, 2004, NanoScience and Technology book series (NANO), 978-3-642-05847-9. ⟨hal-03059586⟩

Book sections8 documents

  • D. Vuillaume, C. Delerue. Transport électronique dans une molécule : une nouvelle diode. Images de la physique 2005, Spécial Année mondiale de la physique, Editions du CNRS, Paris, France, pp.186-191, 2005. ⟨hal-00131700⟩
  • Guy Allan, Christophe Delerue, Christophe Krzeminski, Michel Lannoo. Nanoelectronics. Nanostructured Materials, Springer US, p. 161-183, 2004, Electronic Materials: Science & Technology, 978-1-4020-7241-3 (Print) 978-0-306-47722-5 (Online). ⟨10.1007/0-306-47722-X_10⟩. ⟨hal-00710039v2⟩
  • C. Delerue, M. Lannoo. Nanostructures : theory and modelling. Nanoscience and technology, Springer, pp.1-297, 2004. ⟨hal-00131741⟩
  • G. Allan, C. Delerue, M. Lannoo. Theory of Si nanocrystals. PAVESI L., GAPONENKO S., and DAL NEGRO L. Towards the first silicon laser, Kluwer Academic Publishers, pp.243-260, 2003. ⟨hal-00131749⟩
  • G. Allan, C. Delerue, C. Krzeminski, M. Lannoo. Nanoelectronics. Nanostructured materials - Selected synthesis methods, properties and applications, Kluwers Academic Publishers, pp.161-183, 2002. ⟨hal-00132014⟩
  • C. Delerue, M. Lannoo, G. Allan. Porous silicon modelled as idealised quantum dots. CANHAM L. Properties of porous silicon, The Institution of Electrical Engineers, London, UK, pp.212, 1997. ⟨hal-00132027⟩
  • M. Lannoo, G. Allan, C. Delerue. Theory of optical properties and recombination processes in porous silicon. AMATO G., DELERUE C., VON BARDEBEN H.J. Structural and optical properties of porous silicon nanostructures, Gordon and Breach Science Publishers, pp.187, 1997. ⟨hal-00132029⟩
  • C. Delerue, G. Allan, M. Lannoo. Theory of the radiative and non radiative processes in silicon nanocrystallites. WILLARDSON R.K., WEBER E., LOCKWOOD D. Light emissions in silicon : from physics to devices, Academic Press, London, UK, pp.253, 1997. ⟨hal-00132030⟩

Directions of work or proceedings3 documents

  • M. Diarra, C. Delerue, Y.M. Niquet. Etude théorique de nanofils semi-conducteurs. Editions Universitaires Européennes, pp.144, 2010. ⟨hal-00575766⟩
  • L. Tsybeskov, D.J. Lockwood, C. Delerue, M. Ichikawa, A.W. van Buuren. Group-IV Semiconductor Nanostructures - Materials Research Society 2006 Fall Symposium Proceedings, volume 958. Materials Research Society, Warrendale, PA, USA, pp.L01-L11, 2007. ⟨hal-00362383⟩
  • L. Tsybeskov, D.J. Lockwood, C. Delerue, M. Ichikawa. Group-IV Semiconductor Nanostructures - Materials Research Society 2004 Fall Symposium Proceedings, volume 832. Materials Research Society, Warrendale, PA, USA, pp.F1.1 - F11.8, 2005. ⟨hal-00131730⟩

Patents1 document

  • D. Stievenard, C. Delerue, Bernard Legrand. Détecteur infrarouge semi-conducteur et son procédé de fabrication. N° de brevet: FR2791474 (A1). 2000. ⟨hal-00372676⟩

Preprints, Working Papers, ...1 document

  • Stéphane Lenfant, Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume. Molecular rectifying diodes from self-assembly on silicon. 2003. ⟨hal-00000385⟩