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Couplage direct d'un modèle physique analytique de Transistor à Effet de Champ sur Carbure de Silicium avec un simulateur de circuit en équilibrage harmonique

 Delphine Siriex , Raphaël Sommet , Olivier Noblanc , C Arnodo , Christian Brylinski , et al.
11ème Journées Nationales Microondes, 1999, Unknown, Unknown Region
Communication dans un congrès hal-01279782v1

3D TCAD Simulations for More Efficient SiC Power Devices Design

 Luong Viet Phung , Dominique Planson , Pierre Brosselard , Dominique Tournier , C. Brylinski
ECS Transactions, 2013, 58 (4), pp.331 - 339. ⟨10.1149/05804.0331ecst⟩
Article dans une revue hal-01636483v1

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport

 Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry-Jebali , et al.
Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩
Article dans une revue hal-00803058v1
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Optimization of VLS Growth Process for 4H-SiC P/N Junctions

 Selsabil Sejil , Mihai Lazar , Frédéric Cayrel , Davy Carole , Christian Brylinski , et al.
Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩
Article dans une revue hal-01388031v1

Advanced results on nitride-based HEMTs for microwave power amplification

 Jean-Claude de Jaeger , Brahim Benbakhti , S. Boulay , N. Defrance , Christophe Gaquière , et al.
11th International Symposium on Microwave and Optical Technology, ISMOT-2007, Dec 2007, Monte Porzio Catone, Italy
Communication dans un congrès hal-00367426v1

Investigations on the origin of the ohmic behavior for Ti/Al based contacts on n-type GaN

 Nicolas Thierry-Jebali , Olivier Ménard , Christiane Dubois , Dominique Tournier , Emmanuel Collard , et al.
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.208-212, ⟨10.4028/www.scientific.net/MSF.711.208⟩
Communication dans un congrès hal-00747672v1
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4H-SiC P-N junctions realized by VLS for JFET lateral structures

 Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski , et al.
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès hal-02133686v1

Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase

 A. Vo-Ha , D. Carole , Mihai Lazar , Dominique Tournier , F. Cauwet , et al.
Diamond and Related Materials, 2013, 35, pp.24-28. ⟨10.1016/j.diamond.2013.03.007⟩
Article dans une revue hal-02863887v1

Perspectives on SiC and III-N Based Devices for Power Electronics

 Christian Brylinski , Dominique Planson
220th ECS Meeting, The Electrochemical Society, Oct 2011, Boston, United States. pp.139-152, ⟨10.1149/1.3631492⟩
Communication dans un congrès hal-02865456v1

Gallium nitride activity at TIGER

 S. Delage , C. Brylinski , Jean-Claude de Jaeger
CEPA2 Microelectronics Workshop, 2003, Gothenburg, Sweden
Communication dans un congrès hal-00146713v1

Characterization and modeling of nonlinear trapping effects in power SiC MESFETs

 Delphine Siriex , Denis Barataud , Raphaël Sommet , O Noblanc , Zineb Ouarch , et al.
Microwave Symposium Digest., 2000 IEEE MTT-S International, 2000, Unknown, Unknown Region. pp.765--768 vol.2
Communication dans un congrès hal-01279780v1

Récents résultats et perspectives du laboratoire TIGER dans le domaine des composants HEMT AlGaN/GaN

 Sylvain Laurent Delage , Marie-Antoinette Di Forte-Poisson , M. Magis , J. Di Persio , Didier Theron , et al.
14èmes Journées Nationales Microondes, 2005, Nantes, France
Communication dans un congrès hal-00126466v1
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Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC)

 Jonathan Faugier-Tovar , Florica Lazar , Catherine Marichy , Christian Brylinski
Condensed Matter, 2017, 2 (1), pp.3. ⟨10.3390/condmat2010003⟩
Article dans une revue hal-02106457v1

Thermodynamical calculations on the chemical vapor transport of silicon carbide

 Didier Chaussende , Yves Monteil , Patrick Aboughe-Nze , Christian Brylinski , Jean Bouix
Materials Science and Engineering: B, 1999, 61-62, pp.98-101
Article dans une revue hal-00186935v1

Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride

 Nicolas Thierry-Jebali , Olivier Ménard , Arnaud Yvon , Emmanuel Collard , Miao Zhe , et al.
Materials Science Forum, 2011, 679-680, pp.812-815. ⟨10.4028/www.scientific.net/MSF.679-680.812⟩
Article dans une revue hal-02735359v1
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P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices

 Mihai Lazar , Selsabil Sejil , L. Lalouat , Christophe Raynaud , D. Carole , et al.
Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342
Article dans une revue hal-01626119v1

Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers

 Christian Brylinski , Olivier Ménard , Nicolas Thierry-Jebali , Frédéric Cayrel , Daniel Alquier
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nürnberg, Germany. pp.879-884, ⟨10.4028/www.scientific.net/MSF.645-648.879⟩
Communication dans un congrès hal-02864869v1

Characterisation of AlGaN/GaN HEMT epitaxy and devices on composite substrates

 G. Meneghesso , C. Ongaro , E. Zanoni , C. Brylinski , M.A. Di Forte-Poisson , et al.
IEEE International Electron Devices Meeting, IEDM 2007, 2007, United States. pp.401-404, ⟨10.1109/IEDM.2007.4418957⟩
Communication dans un congrès hal-00284405v1
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Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

 Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski , et al.
Materials Science Forum, 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩
Article dans une revue hal-01648360v1

Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport

 Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo Ha , Davy Carole , Véronique Soulière , et al.
Materials Science Forum, 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩
Article dans une revue hal-01627792v1

It’s a Long Way to “Superhard” Semiconductors

 Christian Brylinski
NANAOHARD 2009, Central Laboratory of Applied Physics, Bulgarian Academy of Sciences, May 2009, Sozopol, Bulgaria. pp.19-25, ⟨10.4028/www.scientific.net/SSP.159.19⟩
Communication dans un congrès hal-02865422v1

p-Doped SiC Growth on Diamond Substrate by VLS Transport

 Arthur Vo Ha , Davy Carole , Mihai Lazar , Dominique Tournier , François Cauwet , et al.
Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩
Article dans une revue hal-01627777v1
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Towards Very High Voltage SiC Power Devices

 Dominique Planson , Pierre Brosselard , Dominique Tournier , L V Phung , C. Brylinski
PRiME 2012-ECS, Oct 2012, Honolulu-Hawaii, United States. ⟨10.1149/05003.0425ecst⟩
Communication dans un congrès hal-02116906v1

GaN devices for high performance RF power amplifier

 Christophe Gaquière , Brahim Benbakhti , S. Boulay , N. Defrance , Damien Ducatteau , et al.
2nd European Microwave Integrated Circuits Conference, EuMIC 2007, Oct 2007, Munich, Germany
Communication dans un congrès hal-00367425v1

Characterization and kinetic monitoring of the reactions between TixAly phases in Ti-Al based ohmic contacts on n-type GaN by Differential Scanning Calorimetry (DSC)

 Nicolas Thierry-Jebali , Rodica Chiriac , Christian Brylinski
2013 19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Sep 2013, Berlin, Germany. pp.372-375, ⟨10.1109/THERMINIC.2013.6675181⟩
Communication dans un congrès hal-02865475v1
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Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport

 Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry Thierry-Jebali , et al.
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès hal-04362529v1

Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport

 Gabriel Ferro , Alexandre Jaud , Laurent Auvray , Abdelkarim Kahouli , Tony Abi-Tannous , et al.
Journal of Crystal Growth, 2017, 467, pp.18 - 28. ⟨10.1016/j.jcrysgro.2017.03.018⟩
Article dans une revue hal-01615173v1
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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy

 Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski , et al.
ECSCRM'16, Sep 2016, Halkidiki, Greece
Communication dans un congrès hal-02138729v1

Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase

 Olivier Kim-Hak , Jean Lorenzzi , Nikoletta Jegenyes , Gabriel Ferro , Davy Carole , et al.
Materials Science Forum, 2010, 645-648, pp.163-166. ⟨10.4028/www.scientific.net/MSF.645-648.163⟩
Article dans une revue hal-02735381v1

Buried selective growth of p-doped SiC by VLS epitaxy

 Davy Carole , Stéphane Berckmans , Arthur Vo-Ha , Mihai Lazar , Dominique Tournier , et al.
Materials Science Forum, 2012, 717-720, pp.169-172. ⟨10.4028/www.scientific.net/MSF.717-720.169⟩
Article dans une revue hal-00803061v1
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