- 68
- 27
- 15
- 5
- 4
- 2
- 2
- 1
- 1
Charles Cornet
Prof. Dr.,
Head of FOTON-OHM (Optoelectronics, Heteroepitaxy and Materials) research team
125
Documents
Identifiants chercheurs
charles-cornet-
0000-0002-1363-7401
- Google Scholar : https://scholar.google.fr/citations?user=6MVy6kAAAAAJ&hl=fr&oi=ao
- IdRef : 112108571
Présentation
### **Research projects**
\*2023-2027: PEPR Hydrogène décarboné - France 2030: “Robust, cost efficient aNd AUTonomous PhotoelectrochemIcaL cells with III-V thin films on Si for practical hydrogen prodUction. (NAUTILUS)”: coordinator.
\*2022-2026: PEPR Electronique - France 2030: “Optical Frequency Combs On a Chip (OFCOC)”: contributor, growth.
\*2021-2025: EU COST action: “European Network for Innovative and Advanced Epitaxy (OPERA)”: secondary proposer, Management committee member.
\*2021-2025: ANR PRC project “collaborative”: “PhysIcAl properties of hybrid semimetal/semicoNductor III-V/Si maTerials (PIANIST)”: coordinator, growth, simulation, optoelectronic properties.
\*2021-2025: ANR PRC project “collaborative”: “Nucleation and growth of III-V on Si explored in situ (NUAGES)”: local coordinator, growth, simulation.
\*2021-2025: PIA project Equipex NanoFutur: FOTON local scientific coordinator.
\*2021-2024: ANR PRC project “collaborative”: “Light COnveRsioN by photoinduced‐electrochemiluminescence (LICORN)”: contributor, growth.
\*2020-2023: ANR PRCE project “collaborative with a company”: “High-Efficiency Epitaxial CIGS-Silicon Tandem Solar Cell (EPCIS)”: contributor, growth.
\*2019-2022: ANR PRC project “collaborative”: “Improvement of photovoltaic Conversion Efficiency by acting on thermalization MecANisms (ICEMAN)”: contributor, growth.
\*2018-2021: ANR young researcher grant (projet jeune chercheur ANR): “secOnd oRder oPtical pHenomEna in galliUm phosphide microdisks on Silicon (ORPHEUS)”: contributor, growth and simulation.
\*2015-2018: ANR PRC project “collaborative”: “Advanced aNalysis of III-V/Si nucleaTIon for highly integrated PhOtonic Devices (ANTIPODE)”: coordinator, growth and simulation.
\*2014-2017: Labex Cominlabs project: “3D optical manycores”: contributor.
\*2012-2015: ANR “blanc” project: “Epitaxial integration of III-V optoelectronic devices on silicon (OPTOSI)”: project co-writer, contributor.
\*2012-2014: ANR young researcher grant (projet jeune chercheur ANR): “Silicon photonics with diluted nitride coherent integration (SINPHONIC)”: project main writer, coordinator, WP leader, contributor.
\*2011-2014: National (3) and international (1) beam time allocation at European Synchrotron Radiation Facility (ESRF) on CRG lines D2AM and BM-32.
\*2011-2014: ANR PROGELEC project: “Monolithic integration of high efficiency III-V solar cells on silicon (MENHIRS)”: project co-writer, contributor and member of the administrative and financial staff.
\*2011-2012: C’nano NANOTRANS project (C’nano Nord-ouest): “dilute nitride quantum dots: relationship between morphology, electronic structure and optical properties”: project co-writer, joint coordinator, contributor.
\*2004-2009: FP6 European network of excellence on Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE): contributor.
\*2004-2008: FP6 European Network of Excellence on Photonic Integrated Components and Circuits (EPIXNET): contributor.
### **Awards**
\*Vebleo Fellow (2021).
\* Innovation award of the “pôle de compétitivité Images et Réseaux”, for the SINPHONIC ANR project (2013).
\* Young researcher award of “Région Bretagne” (2007)
\* Best Ph. D. prize of the SANDiE European network of excellence (2006)
### **Short CV**
- 2020-present: INSA, Rennes, France
Position : Professor at INSA Rennes, Institut FOTON (CNRS), head of the “[Optoelectronics, Heteroepitaxy and Materials (OHM) research group](http://foton.cnrs.fr/v2016/spip.php?rubrique33)”. Personal Research field: Growth, structural, electronic and optical properties of III-V/Si-based light emitters/absorbers on silicon for photonics and energy materials applications. Solar hydrogen production with photo-electrochemical cells.
- 2007-2020: INSA, Rennes, France
Position : “Maître de Conférences” (Ass. Prof., HDR), at FOTON CNRS Laboratory. Co-head of the “photonics on silicon” research program. Since 2017, head of the “[Optoelectronics, Heteroepitaxy and Materials (OHM) research group](http://foton.cnrs.fr/v2016/spip.php?rubrique33)”. Personal Research field: Growth, structural, electronic and optical properties of GaP-based light emitters/absorbers on silicon for photonics and energy materials applications.
- 2006–2007: INSA Rennes, France
Position: Post-doctoral fellow with teaching activities at FOTON CNRS Laboratory. Research topic: Growth and characterization of InAs/GaP quantum dots.
- 2003–2006: INSA, Rennes (France), TU Berlin (Germany) and KU Leuven (Belgium)
Position: Physics PhD Thesis on “electronic, optical and dynamic properties of self-organized and coupled quantum dots on InP substrate” at INSA-Rennes (France) in collaboration with TU Berlin, KU Leuven and TU Eindhoven within European network of excellence SANDIE.PhD Thesis supervised by Pr. J. Even. Research topic: Electronic, optical and dynamic properties of self-organized and coupled quantum dots on InP substrate.
- 2003: “Diplôme d’Etudes Approfondies” (DEA = MSc2 degree) of Physics: light and matter interaction, at University of Rennes 1,France. Highest distinction, ranked first.
Position: Master 2 training period at LENS laboratory (“Laboratoire d’Etude des Nanostructures à Semiconducteurs”). Research topic: Absorption measurements and simulations of InAs/InP (113)B quantum dots.
- 2001-2002: “Agrégation de Physique” passed at Ecole Normale Supérieure (ENS – Paris, France).
- 2001: Center for Quantum Electronics, Hanoi (Vietnam)
Position: Master 1 training period at CQE laboratory. Research topic: Time-resolved spectroscopy of tunable dye lasers
- …-2000: Paris-Sud University, Orsay (France)
“Licence”, “Maîtrise” and “Magistère” (BSc and MSc1 degrees) of fundamental physics at Paris-Sud University (Université Paris XI – Orsay, France)
Position: BSc training period at “Laboratory of the linear accelerator” (particle physics). Research topic: Analysis of DIRC performances in the frame of the Babar experiment
### **Teaching Activities**
\* Energetics and environment: from nuclear to renewable energies.
\* Applied quantum mechanics (quantum mechanic for beginners).
\* Thermodynamics.
Compétences
-Materials for Photonics and Energy / Photovoltaics and Solar Hydrogen
-III-V semiconductors and Silicon
-Physics of semiconductors: modeling of nanostructures, bandstructures, bandlineups
-Optical and structural properties of semiconductors compounds and devices
-Epitaxy and Ultra-High Vacuum crystal growth techniques
-Atomic Force Microscopy (AFM) and related near-field techniques
-Surface and volume diffraction (RHEED, XRD)
Publications
- 1
- 5
- 6
- 9
- 4
- 7
- 8
- 3
- 3
- 6
- 11
- 23
- 16
- 8
- 2
- 1
- 1
- 3
- 6
- 2
- 5
- 4
- 4
- 3
- 3
- 2
- 2
- 2
- 2
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 125
- 85
- 82
- 70
- 60
- 45
- 45
- 44
- 38
- 37
- 36
- 36
- 35
- 28
- 25
- 25
- 24
- 22
- 22
- 20
- 19
- 19
- 19
- 18
- 18
- 18
- 17
- 17
- 16
- 16
- 15
- 14
- 13
- 13
- 13
- 13
- 13
- 13
- 12
- 12
- 12
- 12
- 12
- 11
- 11
- 11
- 10
- 9
- 9
- 8
- 8
- 8
- 7
- 7
- 7
- 7
- 6
- 6
- 6
- 6
- 6
- 6
- 6
- 5
- 5
- 5
- 5
- 4
- 4
- 4
- 4
- 4
- 4
- 4
- 4
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 43
- 82
- 14
- 14
- 9
- 8
- 6
- 6
- 5
- 5
- 2
- 1
- 1
- 1
- 1
- 1
EQUIPEX NANOFUTUR : IMPLANTATION D'UN CLUSTER DE CROISSANCE POUR LES MATÉRIAUX ET COMPOSANTS III-V EPITAXIES A L'INSTITUT FOTONMATEPI 2023, Jul 2023, Paris, France
Communication dans un congrès
hal-04225150v1
|
|
Hétéro-épitaxie III-V/Si : contrôle des propriétés des surfaces et interfaces pour la photo-électrochimie35èmes Journées Surfaces et Interfaces, Jan 2022, Dijon (virtual), France
Communication dans un congrès
hal-03588378v1
|
|
Transport in photoelectrochemical heterojunctions: Interface-controlled physics13th Meeting on NanoScience Advances (MNA 2022), Sep 2022, Porquerolles, France
Communication dans un congrès
hal-03841668v1
|
|
Tunable bandgap III-V alloys on a low-cost Si substrate for solar-assisted water splittingInternational Workshop on Emerging Solar Energy Materials and Applications (ESEMA 2022), May 2022, Porquerolles, France
Communication dans un congrès
hal-03968129v1
|
|
MBE-grown GaAs on a low-cost Si substrate for solar hydrogen productionEMRS Fall Meeting 2022, European Materials Research Society, Sep 2022, Warsaw, Poland
Communication dans un congrès
hal-03967984v1
|
|
Hybrid ambipolar 2D semimetal/semiconductor III-V/Si heterostructures: Promises for photonics, energy harvesting and electronicsWebinar on Materials science, engineering and technology - VEBLEO, VEBLEO international organization, Dec 2021, virtual, India
Communication dans un congrès
hal-03588366v1
|
|
III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production21st International Conference on Molecular Beam Epitaxy (IC-MBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès
hal-03392254v1
|
|
Is a substrate miscut really required for high quality III-V/Si monolithic integration?21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès
hal-03402689v1
|
|
Robust 2D semimetallic inclusions boost performances of III-V/Si heterostructures for water-splitting17è Journées de la Matière Condensée (JMC 17), Aug 2021, Rennes (virtual), France
Communication dans un congrès
hal-03402743v1
|
|
III-V/Si photoelectrodes with ambipolar properties5èmes Journées des Carburants Solaires, Sep 2021, Saint Jacut de la Mer, France
Communication dans un congrès
hal-03408282v1
|
|
GaPSb/Si tandem material with APBs for efficient overall water splittingJournées Nanomatériaux de Rennes, Jan 2020, Rennes, France
Communication dans un congrès
hal-03032905v1
|
|
Universal growth mechanism of III-V/Si: using antiphase boundaries for devices.Réunion plénière du GDR Pulse (PULSE 2019), Jul 2019, Clermont-Ferrand, France
Communication dans un congrès
hal-02189095v1
|
|
Solar Water Splitting: surface energy engineering of GaP Template on SiEuropean Materials Research Society - Spring Meeting 2019 (E-MRS 2019 Spring Meeting), Apr 2019, Phoenix, United States
Communication dans un congrès
hal-02114792v1
|
|
GaPSb/Si photoelectrode for Solar Fuel ProductionEuropean COST multsicaleSolar Final meeting, Apr 2019, Sofia, Bulgaria
Communication dans un congrès
hal-03102622v1
|
|
A universal mechanism to describe III-V epitaxy on Si20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
Communication dans un congrès
hal-02048639v1
|
|
III-V/Si photoelectrodes: a new route for solar hydrogen production11è Journées Scientifiques de Porquerolles (JSP2019), C'Nano-PACA, Sep 2019, Porquerolles, France
Communication dans un congrès
hal-02305423v1
|
|
(114) GaP surface texturation on Si for water splittingEMRS Spring meeting 2018, Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01708047v1
|
|
Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S)
Communication dans un congrès
hal-01910556v1
|
|
GaP Template on Si for Solar Water Splitting: surface energy engineeringnanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain
Communication dans un congrès
hal-01909068v1
|
|
A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
Communication dans un congrès
hal-01910554v1
|
|
A general III-V/Si growth process descriptionEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01910535v1
|
|
III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
Communication dans un congrès
hal-01910543v1
|
|
Optical properties of GaP/Si active microdisks containing InGaAs/GaP quantum dotsNanophotonics and Micro/Nano Optics International Conference 2017 (NANOP 2017), Prem C, Sep 2017, Barcelona, Spain
Communication dans un congrès
hal-01707877v1
|
|
Monolithic integration of GaAsPN dilute-nitride compounds on silicon substrates: toward the III-V/Si tandem solar cellSPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States
Communication dans un congrès
hal-01497194v1
|
|
Analyse quantitative des antiphases dans des nanocouches épitaxiales GaP/Si pour la photonique sur siliciumRayons X & Matière 2015, Dec 2015, Grenoble, France
Communication dans un congrès
hal-01497228v1
|
|
Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonicsEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Communication dans un congrès
hal-01497220v1
|
|
Low cristalline defect density in GaP/Si nanolayersEuropean Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France
Communication dans un congrès
hal-01115024v1
|
|
Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for III-V photonics platform on silicon12th Biennal Conference on High-Resolution X-Ray Diffraction and Imaging, Sep 2014, Villard de Lans, France
Communication dans un congrès
hal-01115004v1
|
|
Abrupt heterointerface and low defect density in GaP/Si nanolayersCompound Semiconductor Week 2014, May 2014, Montpellier, France
Communication dans un congrès
hal-01115278v1
|
|
Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/SiMatériaux 2014, Nov 2014, Montpellier, France
Communication dans un congrès
hal-01115312v1
|
|
Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon6th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2014, Bucharest, Romania
Communication dans un congrès
hal-01114912v1
|
|
Analyse quantitative par diffraction des rayons X des défauts plans dans GaP/SI pour la photonique sur SiRéunion plénière du GDR Pulse (PULSE 2014), Oct 2014, Toulouse, France
Communication dans un congrès
hal-01137337v1
|
|
Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Communication dans un congrès
hal-01114877v1
|
|
Intégration optique par croissance directe de nanostructures III-V sur silicium14èmes Journées Nano, Micro et Optoélectronique (JNMO), May 2013, Evian, France
Communication dans un congrès
hal-00918745v1
|
|
GaAsPN compounds for Si photonicsInternational Workshop "Silicon & Photonics", Jun 2013, Rennes, France
Communication dans un congrès
hal-00918743v1
|
|
Développement d'un cluster de croissance UHVCVD-MBE pour l'intégration pseudomorphique III-V/SiRéunion plénière du GDR Pulse (PULSE 2013), Jul 2013, Aix-en-Provence, France
Communication dans un congrès
hal-00918749v1
|
|
Enhanced incorporation of nitrogen on atomic step edges adsorption sites in diluted nitrides alloyseuro-MBE conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918668v1
|
|
Analyse quantitative de la perfection cristalline de nanocouches épitaxiales GaP/SiXème colloque rayons X et matière, Nov 2013, Nantes, France
Communication dans un congrès
hal-00918790v1
|
|
Growth of GaP on biatomic Si steps using a UHVCVD-MBE clustereuro-MBE conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918666v1
|
|
gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918730v1
|
|
Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates : toward the III-V/Si Concentrated PhotovoltaicsInternational Symposium on Inorganic and Environmental Materials, Oct 2013, Rennes, France
Communication dans un congrès
hal-00918754v1
|
|
UHVCVD-MBE growth cluster for III-N-V/Si solar cellsCompound semiconductors week, ISCS, 2013, May 2013, Kobe, Japan
Communication dans un congrès
hal-00918735v1
|
|
Etude par TEM et DRX des défauts cristallins dans des couches épitaxiées par MBE de GaP sur Silicium (001)Réunion plénière du GDR Pulse (PULSE 2013), Jul 2013, Aix-en-Provence, France
Communication dans un congrès
hal-00918748v1
|
|
Sb surface mediated growth of InAs on InP(100) and (311)B substratesEuro-mbe conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918667v1
|
|
Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporationCompound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan
Communication dans un congrès
hal-00918734v1
|
|
Γ-X competition in (In,Ga)As/GaP quantum dots (QDs) : effect of QD size and Indium compositioneuro-MBE conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918669v1
|
|
Analyse quantitative des micromacles dans des nanocouches épitaxiales GaP/Si pour la photonique sur siliciumXème colloque rayons X et matière, Nov 2013, Nantes, France
Communication dans un congrès
hal-00918791v1
|
|
UHVCVD-MBE growth for tandem solar cells4th PhotoVoltaic Technical Conference (PVTC 2013), May 2013, Aix-en-Provence, France
Communication dans un congrès
hal-00918732v1
|
|
Boîtes quantiques semi-conductrices : relation entre morphologie, structure électronique et propriétés optiquesJournées Nanosciences et Nanotechnologies du Nord Ouest 2013 (J2NO 2013), Nov 2013, Rennes, France
Communication dans un congrès
hal-00918787v1
|
|
Optimisation des propriétés structurale de l'interface GaP/Si et des propriétés électroniques de cellules solaires GaAsPN/GaP pour la fabrication de cellule tandemJournées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France
Communication dans un congrès
hal-00918758v1
|
|
|
|
Theoretical and experimental study of (In,Ga)As/GaP quantum dotsInternational Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩
Communication dans un congrès
hal-00726861v1
|
Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cellsJournées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France
Communication dans un congrès
hal-00788544v1
|
|
coherent integration of photonics on silicon through the growth of GaP/SiTechnical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
Communication dans un congrès
hal-00788526v1
|
|
Evaluation of InGaP(N) and GaAsP(N) materials lattice-matched to Si for multi-junction solar cellsinternational conference on MBE, 2012, Japan
Communication dans un congrès
hal-00726772v1
|
|
Optical and structural properties of (In,Ga)As/GaP quantum dots : C2 to C2v symmetry transition during the ripening processinternational conference on MBE, 2012, Nara, Japan
Communication dans un congrès
hal-00726776v1
|
|
Coherent integration of photonics on silicon through the growth of nanostructures on GaP/SiPhotonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩
Communication dans un congrès
hal-00654337v1
|
|
Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cellsJournées nationales du photovoltaïque (JNPV 2012), 2012, Chantilly, France
Communication dans un congrès
hal-00788478v1
|
|
Développement d'un laser sur silicium dans l'approche pseudomorphiqueJournées nationales de l'optique guidée, 2012, Lyon, France
Communication dans un congrès
hal-00788434v1
|
|
Growth of III-V GaP on biatomic Si steps using a UHVCVD-MBE clusterJournées nationales du photovoltaïque 2012, 2012, Chantilly, France
Communication dans un congrès
hal-00788460v1
|
|
(In,Ga)As/GaP quantum dots for monolithic integration on silicon31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland
Communication dans un congrès
hal-00726878v1
|
|
Unusual C2 symmetry properties of (In,Ga)As/GaP quantum dots morphologyinternational conference on superlattice, nanostructures and nanodevices (ICSNN), 2012, Dresden, Germany
Communication dans un congrès
hal-00726864v1
|
|
Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates17th International Conference on Molecular Beam Epitaxy (MBE 2012), Sep 2012, Nara, Japan. pp.25-28, ⟨10.1016/j.jcrysgro.2012.11.046⟩
Communication dans un congrès
hal-00788399v1
|
|
Single InAs quantum dots morphology and local electronic properties on (113)B InP substrateeuro-MBE, Mar 2011, Alpe d'Huez, France
Communication dans un congrès
hal-00654305v1
|
|
Room temperature photoluminescence if InxGa1-xAs quantum dots on GaP substrateJournées Boîtes Quantiques 2011 (JBQ 2011), Jun 2011, Toulouse, France
Communication dans un congrès
hal-00654317v1
|
|
Structural charaterisation of GaP/Si nanolayersCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1-4
Communication dans un congrès
hal-00654292v1
|
|
Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
Communication dans un congrès
hal-00654285v1
|
|
structural characterization of MBE grown GaP/Si nanolayerseuro-MBE, Mar 2011, Alpe d'Huez, France
Communication dans un congrès
hal-00654309v1
|
|
Structural characterisation of GaP/Si nanolayersEuropean Materials Research Society 2011, May 2011, Strasbourg, France
Communication dans un congrès
hal-00654330v1
|
|
caractérisation de semi-conducteurs III-V nanostructurés par microscopie à force atomiqueJournées de la microscopie champ proche Bretagne, Jun 2010, Rennes, France. pp.1
Communication dans un congrès
hal-00504500v1
|
|
|
|
Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11
Communication dans un congrès
hal-00504506v1
|
Self-organized growth of InAs quantum dots on InP substrate emitting at 1.55-μmSecond French Research Organizations - Tohoku University Joint Workshop on Frontier Materials, Nov 2009, Sendai, Japan. p-23
Communication dans un congrès
hal-00491459v1
|
|
Stransky-Krastanow Gas Source MBE growth and optical properties of InAs/GaP quantum dotseuro-MBE conference, Mar 2007, Sierra nevada, Granada, France. pp.1
Communication dans un congrès
hal-00491810v1
|
|
A theoretical and experimental study of lambda>2 µm luminescence of quantum dots on InP substrate28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.889, ⟨10.1063/1.2730177⟩
Communication dans un congrès
hal-00491466v1
|
|
InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 μm photoluminescence4th International Conference on Semiconductor Quantum Dots (QD 2006), May 2006, Chamonix, France. pp.3920, ⟨10.1002/pssc.200671622⟩
Communication dans un congrès
hal-00491729v1
|
|
Carrier dynamics and saturation effect in (311)B InAs/InP quantum dot lasersPHASE 2005, international workshop on physics and applications of semiconductors lasers, 2005, Metz, France. pp.1
Communication dans un congrès
hal-00504411v1
|
|
InAsSb/InP quantum dots for midwave infrared emitters : a theoretical studyMid Infrared Optoelectronics : Materials and Devices : MIOMD conference, 2005, Lancaster, United Kingdom. pp.1
Communication dans un congrès
hal-00504452v1
|
|
InAsSb/InGaAs quantum nanostructures on InP (100)substrate: observation of 2.35 μm photoluminescence32nd International Symposium on Compound Semiconductors, Sep 2005, Rust, Germany. pp.524, ⟨10.1002/pssc.200564132⟩
Communication dans un congrès
hal-00491737v1
|
|
First observation of wavelength greater than 2 microns photoluminescence of quantum dots on InP (100) substrate"Mid Infrared Optoelectronics : Materials and Devices" conference, Lancaster, UK, September (2005)., Sep 2005, Lancaster, United Kingdom. pp.1
Communication dans un congrès
hal-00504462v1
|
|
Structures à îlots quantiques sur substrat InP(100)pour l'émission dans le moyen infrarouge (2−5 µm)9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.283, ⟨10.1051/jp4:2006135090⟩
Communication dans un congrès
hal-00491724v1
|
|
Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniquesjournée des doctorants de Rennes, Dec 2004, Rennes, France. pp.1
Communication dans un congrès
hal-00504407v1
|
Using in-plane built-in electric fields and electrical shunts of antiphase boundaries for III-V/Si solar harvesting devices21st EuroMBE Workshop, Apr 2023, Madrid, Spain. 2023
Poster de conférence
hal-04225037v1
|
|
Performance of epitaxial GaAs/Si vs GaAs photocathodes for solar hydrogen production.74th Annual Meeting of the International Society of Electrochemistry, Sep 2023, Lyon, France. 2023
Poster de conférence
hal-04224954v1
|
|
High stability of a MBE grown GaAs/Si photocathode for solar H2 production.21st EuroMBE Workshop, Apr 2023, Madrid, Spain. 2023
Poster de conférence
hal-04225008v1
|
|
Bandgap engineering of III-V semiconductors on silicon for solar hydrogen production5èmes Journées des Carburants Solaires, Sep 2021, Saint Jacut de la Mer, France
Poster de conférence
hal-03408286v1
|
|
Performances of III-P/Si based photoelectrodes for solar hydrogen productionJournées Nationales du photovoltaïque 2020, Jan 2021, Dourdan, France. 2021
Poster de conférence
hal-03032889v1
|
|
MBE-grown GaAs(x)P(1-x)/Si photoelectrodes for solar hydrogen production21st International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2021, Mexico (virtual), Mexico
Poster de conférence
hal-03402702v1
|
|
|
|
Influence des paramètres de croissance de l'homoépitaxie silicium par UHV- CVD sur la reconstruction de surface du siliciumJournées Nanomatériaux, Jan 2020, Rennes, France
Poster de conférence
hal-02474736v1
|
Indium content impact on structural and optical properties of (In,Ga)As/GaP quantum dots31è colloque Journées Surfaces et Interfaces (JSI 2017), Jan 2017, Rennes, France
Poster de conférence
hal-01707905v1
|
|
Structural and optical properties investigation of (In,Ga)As/GaP quantum dots for direct bandgap emission19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Poster de conférence
hal-01497049v1
|
|
AlGaP-growth and doping by MBE19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Poster de conférence
hal-01497057v1
|
|
|
|
GaP/Si Antiphase domains annihilation at the early stages of growthSummer School of the French Epitaxy Network, Sep 2015, Porquerolles, France
Poster de conférence
hal-02497252v1
|
Lattice-matched GaAsPN/GaP single junction solar cell for high-efficiency tandem solar cells on siliconEuro-MBE 2015, Mar 2015, Canazei, Italy. 2015
Poster de conférence
hal-01147439v1
|
|
Impact of annealing on the performances of GaAsPN-based solar cellsCompound Semiconductor Week 2014, May 2014, Montpellier, France. 2014
Poster de conférence
hal-01115039v1
|
|
Development of GaAsPN alloy for its integration in III-V/Si tandem solar cellWorkshop on above 25% efficiency solar cells via low cost approaches, Jul 2014, Palaiseau, France
Poster de conférence
hal-01115014v1
|
|
Annealing effect on electrical properties of GaAsPN solar cells29th European PV Solar Energy Conference (EU PVSEC 2014), Sep 2014, Amsterdam, Netherlands. 2014
Poster de conférence
hal-01115032v1
|
|
Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562587⟩
Poster de conférence
hal-00918662v1
|