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Charles Cornet
Prof. Dr.,
Head of FOTON-OHM (Optoelectronics, Heteroepitaxy and Materials) research team
24
Documents
Identifiants chercheurs
- charles-cornet
- 0000-0002-1363-7401
- Google Scholar : https://scholar.google.fr/citations?user=6MVy6kAAAAAJ&hl=fr&oi=ao
- IdRef : 112108571
Présentation
### **Research projects**
\*2023-2027: PEPR Hydrogène décarboné - France 2030: “Robust, cost efficient aNd AUTonomous PhotoelectrochemIcaL cells with III-V thin films on Si for practical hydrogen prodUction. (NAUTILUS)”: coordinator.
\*2022-2026: PEPR Electronique - France 2030: “Optical Frequency Combs On a Chip (OFCOC)”: contributor, growth.
\*2021-2025: EU COST action: “European Network for Innovative and Advanced Epitaxy (OPERA)”: secondary proposer, Management committee member.
\*2021-2025: ANR PRC project “collaborative”: “PhysIcAl properties of hybrid semimetal/semicoNductor III-V/Si maTerials (PIANIST)”: coordinator, growth, simulation, optoelectronic properties.
\*2021-2025: ANR PRC project “collaborative”: “Nucleation and growth of III-V on Si explored in situ (NUAGES)”: local coordinator, growth, simulation.
\*2021-2025: PIA project Equipex NanoFutur: FOTON local scientific coordinator.
\*2021-2024: ANR PRC project “collaborative”: “Light COnveRsioN by photoinduced‐electrochemiluminescence (LICORN)”: contributor, growth.
\*2020-2023: ANR PRCE project “collaborative with a company”: “High-Efficiency Epitaxial CIGS-Silicon Tandem Solar Cell (EPCIS)”: contributor, growth.
\*2019-2022: ANR PRC project “collaborative”: “Improvement of photovoltaic Conversion Efficiency by acting on thermalization MecANisms (ICEMAN)”: contributor, growth.
\*2018-2021: ANR young researcher grant (projet jeune chercheur ANR): “secOnd oRder oPtical pHenomEna in galliUm phosphide microdisks on Silicon (ORPHEUS)”: contributor, growth and simulation.
\*2015-2018: ANR PRC project “collaborative”: “Advanced aNalysis of III-V/Si nucleaTIon for highly integrated PhOtonic Devices (ANTIPODE)”: coordinator, growth and simulation.
\*2014-2017: Labex Cominlabs project: “3D optical manycores”: contributor.
\*2012-2015: ANR “blanc” project: “Epitaxial integration of III-V optoelectronic devices on silicon (OPTOSI)”: project co-writer, contributor.
\*2012-2014: ANR young researcher grant (projet jeune chercheur ANR): “Silicon photonics with diluted nitride coherent integration (SINPHONIC)”: project main writer, coordinator, WP leader, contributor.
\*2011-2014: National (3) and international (1) beam time allocation at European Synchrotron Radiation Facility (ESRF) on CRG lines D2AM and BM-32.
\*2011-2014: ANR PROGELEC project: “Monolithic integration of high efficiency III-V solar cells on silicon (MENHIRS)”: project co-writer, contributor and member of the administrative and financial staff.
\*2011-2012: C’nano NANOTRANS project (C’nano Nord-ouest): “dilute nitride quantum dots: relationship between morphology, electronic structure and optical properties”: project co-writer, joint coordinator, contributor.
\*2004-2009: FP6 European network of excellence on Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE): contributor.
\*2004-2008: FP6 European Network of Excellence on Photonic Integrated Components and Circuits (EPIXNET): contributor.
### **Awards**
\*Vebleo Fellow (2021).
\* Innovation award of the “pôle de compétitivité Images et Réseaux”, for the SINPHONIC ANR project (2013).
\* Young researcher award of “Région Bretagne” (2007)
\* Best Ph. D. prize of the SANDiE European network of excellence (2006)
### **Short CV**
- 2020-present: INSA, Rennes, France
Position : Professor at INSA Rennes, Institut FOTON (CNRS), head of the “[Optoelectronics, Heteroepitaxy and Materials (OHM) research group](http://foton.cnrs.fr/v2016/spip.php?rubrique33)”. Personal Research field: Growth, structural, electronic and optical properties of III-V/Si-based light emitters/absorbers on silicon for photonics and energy materials applications. Solar hydrogen production with photo-electrochemical cells.
- 2007-2020: INSA, Rennes, France
Position : “Maître de Conférences” (Ass. Prof., HDR), at FOTON CNRS Laboratory. Co-head of the “photonics on silicon” research program. Since 2017, head of the “[Optoelectronics, Heteroepitaxy and Materials (OHM) research group](http://foton.cnrs.fr/v2016/spip.php?rubrique33)”. Personal Research field: Growth, structural, electronic and optical properties of GaP-based light emitters/absorbers on silicon for photonics and energy materials applications.
- 2006–2007: INSA Rennes, France
Position: Post-doctoral fellow with teaching activities at FOTON CNRS Laboratory. Research topic: Growth and characterization of InAs/GaP quantum dots.
- 2003–2006: INSA, Rennes (France), TU Berlin (Germany) and KU Leuven (Belgium)
Position: Physics PhD Thesis on “electronic, optical and dynamic properties of self-organized and coupled quantum dots on InP substrate” at INSA-Rennes (France) in collaboration with TU Berlin, KU Leuven and TU Eindhoven within European network of excellence SANDIE.PhD Thesis supervised by Pr. J. Even. Research topic: Electronic, optical and dynamic properties of self-organized and coupled quantum dots on InP substrate.
- 2003: “Diplôme d’Etudes Approfondies” (DEA = MSc2 degree) of Physics: light and matter interaction, at University of Rennes 1,France. Highest distinction, ranked first.
Position: Master 2 training period at LENS laboratory (“Laboratoire d’Etude des Nanostructures à Semiconducteurs”). Research topic: Absorption measurements and simulations of InAs/InP (113)B quantum dots.
- 2001-2002: “Agrégation de Physique” passed at Ecole Normale Supérieure (ENS – Paris, France).
- 2001: Center for Quantum Electronics, Hanoi (Vietnam)
Position: Master 1 training period at CQE laboratory. Research topic: Time-resolved spectroscopy of tunable dye lasers
- …-2000: Paris-Sud University, Orsay (France)
“Licence”, “Maîtrise” and “Magistère” (BSc and MSc1 degrees) of fundamental physics at Paris-Sud University (Université Paris XI – Orsay, France)
Position: BSc training period at “Laboratory of the linear accelerator” (particle physics). Research topic: Analysis of DIRC performances in the frame of the Babar experiment
### **Teaching Activities**
\* Energetics and environment: from nuclear to renewable energies.
\* Applied quantum mechanics (quantum mechanic for beginners).
\* Thermodynamics.
Compétences
-Materials for Photonics and Energy / Photovoltaics and Solar Hydrogen
-III-V semiconductors and Silicon
-Physics of semiconductors: modeling of nanostructures, bandstructures, bandlineups
-Optical and structural properties of semiconductors compounds and devices
-Epitaxy and Ultra-High Vacuum crystal growth techniques
-Atomic Force Microscopy (AFM) and related near-field techniques
-Surface and volume diffraction (RHEED, XRD)
Publications
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Structural, electronic properties and carrier dynamics in InGaAs(N)/GaP quantum dots18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy
Communication dans un congrès
hal-01147481v1
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Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Communication dans un congrès
hal-01114877v1
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gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918730v1
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Γ-X competition in (In,Ga)As/GaP quantum dots (QDs) : effect of QD size and Indium compositioneuro-MBE conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918669v1
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporationCompound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan
Communication dans un congrès
hal-00918734v1
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Intégration optique par croissance directe de nanostructures III-V sur silicium14èmes Journées Nano, Micro et Optoélectronique (JNMO), May 2013, Evian, France
Communication dans un congrès
hal-00918745v1
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GaAsPN compounds for Si photonicsInternational Workshop "Silicon & Photonics", Jun 2013, Rennes, France
Communication dans un congrès
hal-00918743v1
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Carrier lifetime and relaxation dynamics in (In)GaAs/GaP quantum dotsInternational Symposium on Physics and Applications of Laser Dynamics IS-PALD, Oct 2013, Paris, France
Communication dans un congrès
hal-00918752v1
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Optical and structural properties of (In,Ga)As/GaP quantum dots : C2 to C2v symmetry transition during the ripening processinternational conference on MBE, 2012, Nara, Japan
Communication dans un congrès
hal-00726776v1
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(In,Ga)As/GaP quantum dots for monolithic integration on silicon31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland
Communication dans un congrès
hal-00726878v1
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Développement d'un laser sur silicium dans l'approche pseudomorphiqueJournées nationales de l'optique guidée, 2012, Lyon, France
Communication dans un congrès
hal-00788434v1
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Theoretical and experimental study of (In,Ga)As/GaP quantum dotsInternational Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩
Communication dans un congrès
hal-00726861v1
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coherent integration of photonics on silicon through the growth of GaP/SiTechnical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
Communication dans un congrès
hal-00788526v1
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Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationEuropean Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.87-91, ⟨10.1016/j.tsf.2012.10.134⟩
Communication dans un congrès
hal-00918657v1
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Carrier injection in GaP-based laser waveguides and dilute nitrides gain medium18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy. 2015
Poster de conférence
hal-01147468v1
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Electrical injection in GaP-based laser waveguides and active areas26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), pp.P23, 2014, ⟨10.1109/ICIPRM.2014.6880545⟩
Poster de conférence
hal-01114889v1
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GaAsPN alloys for optoelectronics on SiliconCompound Semiconductor Week 2014, May 2014, Montpellier, France. 2014
Poster de conférence
hal-01115268v1
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Carrier capture and relaxation in GaAsPN/GaP quantum wells32nd International Conference on the Physics of Semiconductors (ICPS 2014), Aug 2014, Austin, United States. 2014
Poster de conférence
hal-01115282v1
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562587⟩
Poster de conférence
hal-00918662v1
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