Nombre de documents

189

CV de Charles Cornet


Article dans une revue39 documents

  • Laurent Pedesseau, M Kepenekian, Daniel Sapori, Y Huang, Alain Rolland, et al.. Dielectric properties of hybrid perovskites and drift-diffusion modeling of perovskite cells. SPIE Proceedings Series, 2016, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, 9743, pp.97430N. <http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2504393>. <10.1117/12.2214007>. <hal-01292186>
  • C. Robert, K. Pereira da Silva, M. O. Nestoklon, M. I. Alonso, P. Turban, et al.. Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots. Physical Review B : Condensed matter and materials physics, American Physical Society, 2016, 94 (7), pp.075445. <10.1103/PhysRevB.94.075445>. <hal-01362484>
  • Pierre Guillemé, M. Vallet, J. Stodolna, A. Ponchet, Charles Cornet, et al.. Antiphase domain tailoring for combination of modal and 4¯ -quasi-phase matching in gallium phosphide microdisks. Optics Express, Optical Society of America, 2016, 24 (13), pp.14608. <10.1364/OE.24.014608>. <hal-01396654>
  • Samy Almosni, P. Rale, C. Cornet, Mathieu Perrin, L. Lombez, et al.. Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells. Solar Energy Materials and Solar Cells, Elsevier, 2016, 147, pp.53-60. <10.1016/j.solmat.2015.11.036>. <hal-01272057>
  • S. Ilahi, Samy Almosni, Fares Chouchane, Mathieu Perrin, K. Zelazna, et al.. Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells. Solar Energy Materials and Solar Cells, Elsevier, 2015, 141, pp.291-298. <10.1016/j.solmat.2015.06.003>. <hal-01166475>
  • Yanping Wang, J. Stodolna, M. Bahri, J. Kuyyalil, Thanh Tra Nguyen, et al.. Abrupt GaP/Si hetero-interface using bistepped Si buffer. Applied Physics Letters, American Institute of Physics, 2015, 107 (19), pp.191603. <10.1063/1.4935494>. <hal-01228809>
  • Yanping Wang, Antoine Létoublon, Thanh Tra Nguyen, Mounib Bahri, Ludovic Largeau, et al.. Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setup. Journal of Applied Crystallography, International Union of Crystallography, 2015, 48 (3), pp.702-710. <10.1107/S1600576715009954>. <hal-01157811>
  • Olivier Durand, Samy Almosni, Charles Cornet, Antoine Létoublon, Christophe Levallois, et al.. Multijunction photovoltaics: integrating III–V semiconductor heterostructures on silicon. Spie Newsroom, Spie, 2015, Solar & Alternative Energy, pp.x113168. <10.1117/2.1201503.005793>. <hal-01166437>
  • Jacky Even, Laurent Pedesseau, Eric Tea, Samy Almosni, Alain Rolland, et al.. Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic-Inorganic Perovskites and III/V Heterostructures. International Journal of Photoenergy, Hindawi Publishing Corporation, 2014, 2014, pp.649408. <10.1155/2014/649408>. <hal-01004650>
  • Olivier Durand, Samy Almosni, Yanping Wang, C. Cornet, A. Létoublon, et al.. Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics. Energy Harvesting and Systems, DE GRUYTER, 2014, 1 (3-4), pp.147-156. <10.1515/ehs-2014-0008>. <hal-01166477>
  • Jean-Philippe Gauthier, Cédric Robert, Samy Almosni, Yoan Léger, Mathieu Perrin, et al.. Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots. Applied Physics Letters, American Institute of Physics, 2014, 105 (24), pp.243111. <http://scitation.aip.org/content/aip/journal/apl/105/24/10.1063/1.4904939>. <10.1063/1.4904939>. <hal-01114385>
  • Cédric Robert, Mikhail Nestoklon, Katiane Pereira da Silva, Laurent Pedesseau, Charles Cornet, et al.. Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots. Applied Physics Letters, American Institute of Physics, 2014, 104 (1), pp.011908. <10.1063/1.4861471>. <hal-00941161>
  • Eric Tea, J. Vidal, Laurent Pedesseau, Charles Cornet, Jean-Marc Jancu, et al.. Theoretical study of optical properties of anti phase domains in GaP. Journal of Applied Physics, American Institute of Physics, 2014, 115 (6), pp.063502. <10.1063/1.4864421>. <hal-00979596>
  • Samy Almosni, Cédric Robert, Thanh Tra Nguyen, Charles Cornet, Antoine Létoublon, et al.. Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells. Journal of Applied Physics, American Institute of Physics, 2013, 113 (12), pp.123509. <10.1063/1.4798363>. <hal-00918663>
  • Jithesh Kuyyalil, Thanh Tra Nguyen, Thomas Quinci, Samy Almosni, Antoine Létoublon, et al.. Nitrogen-phosphorus competition in the molecular beam epitaxy of GaPN. Journal of Crystal Growth, Elsevier, 2013, 377, pp.17-21. <10.1016/j.jcrysgro.2013.04.052>. <hal-00918658>
  • Thomas Quinci, Jithesh Kuyyalil, Thanh Tra Nguyen, Yanping Wang, Samy Almosni, et al.. Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster. Journal of Crystal Growth, Elsevier, 2013, 380, pp.157-162. <10.1016/j.jcrysgro.2013.05.022>. <hal-00918659>
  • Weiming Guo, Alexandre Bondi, Charles Cornet, Antoine Létoublon, Olivier Durand, et al.. Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering. Applied Surface Science, Elsevier, 2012, 258, pp.2808. <10.1016/j.apsusc.2011.10.139>. <hal-00654301>
  • Charles Cornet, Thanh Tra Nguyen, Thomas Quinci, Samy Almosni, Tony Rohel, et al.. Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys. Applied Physics Letters, American Institute of Physics, 2012, 101 (25), pp.251906. <10.1063/1.4772785>. <hal-00788403>
  • Cédric Robert, Mathieu Perrin, Charles Cornet, Jacky Even, Jean-Marc Jancu. Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain. Applied Physics Letters, American Institute of Physics, 2012, 100 (11), pp.111901. <10.1063/1.3694028>. <hal-00725676>
  • Cédric Robert, Charles Cornet, Pascal Turban, Thanh Tra Nguyen, Mikhail Nestoklon, et al.. Electronic, optical and structural properties of (In,Ga)As/GaP quantum dots. Physical Review B : Condensed matter and materials physics, American Physical Society, 2012, 86, pp.205316. <10.1103/PhysRevB.86.205316>. <hal-00726726>
  • Thanh Tra Nguyen, Cédric Robert, Weiming Guo, Antoine Létoublon, Charles Cornet, et al.. Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon. Journal of Applied Physics, American Institute of Physics, 2012, 112 (5), pp.053521. <10.1063/1.4751024>. <hal-00726722>
  • Thanh Tra Nguyen, Cédric Robert, Charles Cornet, Mathieu Perrin, Jean-Marc Jancu, et al.. Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots. Applied Physics Letters, American Institute of Physics, 2011, 99, pp.143123. <10.1063/1.3646911>. <hal-00654296>
  • Cédric Robert, Alexandre Bondi, Thanh Tra Nguyen, Jacky Even, Charles Cornet, et al.. Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen. Applied Physics Letters, American Institute of Physics, 2011, 98, pp.251110. <10.1063/1.3601857>. <hal-00654272>
  • Ahmad Shuaib, Christophe Levallois, Jean-Philippe Gauthier, Cyril Paranthoen, Olivier Durand, et al.. Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications. Thin Solid Films, Elsevier, 2011, 519 (18), pp.6178-6182. <10.1016/j.tsf.2011.04.111>. <hal-00600697>
  • A. Letoublon, Weiming Guo, C. Cornet, Alexandre Boulle, M. Veron, et al.. X-ray study of antiphase domains and their stability in MBE grown GaP on Si.. Journal of Crystal Growth, Elsevier, 2011, Proceedings of the 16th International Conference on Molecular Beam Epitaxy (ICMBE), 323 (1), pp.409-412. <10.1016/j.jcrysgro.2010.10.137>. <hal-00692315>
  • Alexandre Bondi, Weiming Guo, Laurent Pedesseau, Soline Boyer-Richard, Hervé Folliot, et al.. Light emitting diodes on silicon substrates: preliminary results. physica status solidi (c), Wiley, 2009, 6 (10), pp.2212-2216. <10.1002/PSSC.200881728>. <hal-00665750>
  • Laurent Pedesseau, Jacky Even, Alexandre Bondi, Weiming Guo, Soline Richard, et al.. Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD. Journal of Physics D: Applied Physics, IOP Publishing, 2008, 41, pp.165505. <10.1088/0022-3727/41/16/165505>. <hal-00491451>
  • Jacky Even, François Doré, Charles Cornet, Laurent Pedesseau. Semianalytical model for simulation of electronic properties of narrow-gap strained semiconductor quantum nanostructures. Physical Review B : Condensed matter and materials physics, American Physical Society, 2008, 77, pp.085305. <10.1103/PhysRevB.77.085305>. <hal-00492285>
  • Jacky Even, François Doré, Charles Cornet, Laurent Pedesseau, Andrei Schliwa, et al.. Semianalytical evaluation of linear and nonlinear piezoelectric potentials for quantum nanostructures with axial symmetry. Applied Physics Letters, American Institute of Physics, 2007, pp.122112. <10.1063/1.2787894>. <hal-00492292>
  • Jacky Even, Charles Cornet, François Doré. Anisotropic and inhomogeneous Coulomb screening in the Thomas-Fermi approximation: Application to quantum dot-wetting layer system and Auger relaxation. physica status solidi (b), Wiley, 2007, 244 (9), pp.3105. <10.1002/pssb.200642334>. <hal-00492297>
  • Charles Cornet, Christophe Labbé, Hervé Folliot, Philippe Caroff, Christophe Levallois, et al.. Time-resolved pump probe of 1.55 µm InAs/InP quantum dots under high resonant excitation. Applied Physics Letters, American Institute of Physics, 2006, 88, pp.171502. <10.1063/1.2199454>. <hal-00491485>
  • Charles Cornet, Manus Hayne, Philippe Caroff, Christophe Levallois, Laurent Joulaud, et al.. Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots. Physical Review B : Condensed matter and materials physics, American Physical Society, 2006, 74, pp.245315. <10.1103/PhysRevB.74.245315>. <hal-00491475>
  • Charles Cornet, Andrei Schliwa, Jacky Even, François Doré, C. Celebi, et al.. Electronic and optical properties of InAs/InP quantum dots on InP(100) and InP„311...B substrates: Theory and experiment. Physical Review B : Condensed matter and materials physics, American Physical Society, 2006, 74, pp.035312. <10.1103/PhysRevB.74.035312>. <hal-00491703>
  • Charles Cornet, Christophe Levallois, Philippe Caroff, Hervé Folliot, Christophe Labbé, et al.. Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 µm laser applications studied by magnetophotoluminescence. Applied Physics Letters, American Institute of Physics, 2005, 87, pp.233111. <10.1063/1.2132527>. <hal-00504390>
  • Charles Cornet, François Doré, A. Ballestar, Jacky Even, Nicolas Bertru, et al.. InAsSb/InP quantum dots for midwave infrared emitters: A theoretical study. Journal of Applied Physics, American Institute of Physics, 2005, 98, pp.126105. <10.1063/1.2143115>. <hal-00504387>
  • Charles Cornet, Charly Platz, Philippe Caroff, Jacky Even, Christophe Labbé, et al.. Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots. Physical Review B : Condensed matter and materials physics, American Physical Society, 2005, 72, pp.035342. <10.1103/PhysRevB.72.035342>. <hal-00504376>
  • Jacky Even, Charles Cornet, Slimane Loualiche. A theoretical model for quantum nanostructures electronic wave functions, magnetic field effects. Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2005, 28, pp.514. <10.1016/j.physe.2005.05.062>. <hal-00504385>
  • Charles Cornet, Jacky Even, Slimane Loualiche. Exciton and biexciton binding and vertical Stark effect in a model lens-shaped quantum box: Application to InAs/InP quantum dots. Physics Letters A, Elsevier, 2005, 344, pp.457. <10.1016/j.physleta.2005.05.103>. <hal-00504370>
  • Charles Cornet, Christophe Labbé, Hervé Folliot, Nicolas Bertru, Olivier Dehaese, et al.. Quantitative investigations of optical absorption in InAs/InP (311…)B quantum dots emitting at 1.55 µm wavelength. Applied Physics Letters, American Institute of Physics, 2004, 85 (23), pp.5685. <10.1063/1.1832750>. <hal-00504369>

Communication dans un congrès135 documents

  • Laurent Pedesseau, Mikael Kepenekian, Daniel Sapori, Alain Rolland, Alexandre Beck, et al.. Dielectric properties of hybrid perovskites and drift-diffusion modelling of perovskite/silicon tandem cells. SPIE Photonics West conference, Feb 2016, San Francisco, United States. <hal-01397746>
  • Mickael Da Silva, Samy Almosni, C. Cornet, Antoine Létoublon, Christophe Levallois, et al.. GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell. SPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States. SPIE, Proc. SPIE, 9358, pp.93580H, 2015, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV. <10.1117/12.2081376>. <hal-01166431>
  • Mickael Da Silva, Shijian Wang, Samy Almosni, Charles Cornet, Antoine Létoublon, et al.. Numerical and experimental ongoing on III-V/Si high-efficiency tandem solar cell. European Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland. <hal-01203374>
  • Pierre Guillemé, Yannick Dumeige, Julie Le Pouliquen, D. Gachet, Tony Rohel, et al.. MBE-grown GaP/Si micro-disks. Euro-MBE 2015, Mar 2015, Canazei, Italy. <hal-01147473>
  • K. Zelazna, M. Gladysiewicz, R. Kudrawiec, W. Walukiewicz, Samy Almosni, et al.. Electronic band structure and optical properties of GaNxPyAs1-x-y with y≥0.6 studied by electro-modulation spectroscopy and photoluminescence. Compound semiconductor week 2015, Jun 2015, Santa-Barbara, United States. 2015. <hal-01147488>
  • Pierre Guillemé, Mounib Bahri, Julie Le Pouliquen, D. Gachet, Tony Rohel, et al.. Investigation of the optical properties of GaP microdisks for optical functions integrated on silicon. Compound semiconductor week 2015, Jun 2015, Santa-Barbara, United States. 2015. <hal-01147496>
  • Charles Cornet, Jean-Philippe Gauthier, Cédric Robert, Samy Almosni, Yoan Léger, et al.. Structural, electronic properties and carrier dynamics in InGaAs(N)/GaP quantum dots. Euro-MBE 2015, Mar 2015, Canazei, Italy. <hal-01147481>
  • Ronan Tremblay, Yong Huang, Jean-Philippe Gauthier, Rozenn Piron, Alexandre Beck, et al.. Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layers. Compound semiconductor week 2015, Jun 2015, Santa-Barbara, United States. 2015. <hal-01147506>
  • O. Durand, Samy Almosni, Mickael Da Silva, Pierre Rale, Alain Le Corre, et al.. Towards the III-V/Si CPV on Si substrates. EMRS 2015 Spring Meeting, May 2015, lille, France. <hal-01403375>
  • Charles Cornet, Pierre Guillemé, Jean-Philippe Gauthier, Cédric Robert, Julien Stodolna, et al.. Intégration pseudomorphique dans la filière GaP/Si pour les applications lasers sur puce. journées thématiques du GDR Ondes GT2, Nov 2014, Orsay, France. <hal-01114901>
  • Cédric Robert, Charles Cornet, Thanh Tra Nguyen, M. Nestoklon, Katiane Pereira da Silva, et al.. Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots. 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, IEEE Xplore Digital Library, pp.Th-B1-2, 2014, Compound Semiconductor Week and 26th International Conference on Indium Phosphide and Related Materials (CSW/IPRM), 2014. <10.1109/ICIPRM.2014.6880555>. <hal-01114877>
  • Olivier Durand, Yanping Wang, Samy Almosni, Mounib Bahri, Julien Stodolna, et al.. Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon. 6th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2014, Bucharest, Romania. <hal-01114912>
  • Yanping Wang, Antoine Létoublon, Thanh Tra Nguyen, Julien Stodolna, Nicolas Bertru, et al.. Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for III-V photonics platform on silicon. 12th Biennal Conference on High-Resolution X-Ray Diffraction and Imaging, Sep 2014, Villard de Lans, France. 2014. <hal-01115004>
  • Alejandro Goñi, Cédric Robert, Katiane Pereira da Silva, M. Nestoklon, Laurent Pedesseau, et al.. Using high pressure to unravel the nature of optical transitions in (In,Ga)As/GaP quantum dots. 16th High Pressure in Semiconductor Physics conference (HPSP-16), Aug 2014, Mexico, Mexico. 2014. <hal-01114998>
  • Olivier Durand, Samy Almosni, Pierre Râle, J. Rodière, Yanping Wang, et al.. Advanced concepts of III-V-based Solar Cells heterostructures: towards III-V/Si CPV on Si substrates and hot-carrier solar cells on InP substrates. European Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France. 2014. <hal-01115019>
  • Yanping Wang, Julien Stodolna, Thanh Tra Nguyen, Antoine Létoublon, Jithesh Kuyyalil, et al.. Low cristalline defect density in GaP/Si nanolayers. European Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France. 2014. <hal-01115024>
  • Yanping Wang, Julien Stodolna, Thanh Tra Nguyen, Antoine Létoublon, Jithesh Kuyyalil, et al.. Abrupt heterointerface and low defect density in GaP/Si nanolayers. Compound Semiconductor Week 2014, May 2014, Montpellier, France. 2014. <hal-01115278>
  • Olivier Durand, Samy Almosni, Yanping Wang, Charles Cornet, Antoine Létoublon, et al.. Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/Si. Matériaux 2014, Nov 2014, Montpellier, France. 2014. <hal-01115312>
  • Yanping Wang, Thanh Tra Nguyen, Antoine Létoublon, Charles Cornet, Nicolas Bertru, et al.. Analyse quantitative par diffraction des rayons X des défauts plans dans GaP/SI pour la photonique sur Si. Colloque annuel du GDR CNRS Pulse, Oct 2014, Toulouse, France. 2014. <hal-01137337>
  • Olivier Durand, Cédric Robert, Thanh Tra Nguyen, Samy Almosni, Thomas Quinci, et al.. Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications. Manijeh Razeghi, Eric Tournié, Gail J. Brown. Photonics West 2013, Feb 2013, San Francisco (CA), United States. SPIE (ISBN: 9780819494009), 8631, pp.863126, 2013, <10.1117/12.2012670>. <hal-00842763>
  • Pierre Râle, Laurent Lombez, Samy Almosni, Charles Cornet, Olivier Durand, et al.. Investigation of GaAsPN Material towards III-V/Si Solar Cells”, session “New Materials and Concepts for Cells. 28th European Photovoltaic Solar Energy Conference (EU PVSEC 2013), Sep 2013, Paris, France. <hal-01166803>
  • Cédric Robert, Charles Cornet, Pascal Turban, S. Mauger, Thanh Tra Nguyen, et al.. Γ-X competition in (In,Ga)As/GaP quantum dots (QDs) : effect of QD size and Indium composition. euro-MBE conference, Mar 2013, Levi, Finland. <hal-00918669>
  • Eric Tea, Charles Cornet, Antoine Létoublon, J. Vidal, Laurent Pedesseau, et al.. Ab initio investigation of defect nucleation at III-V/Si heterointerface for tandem solar cells applications. European Materials Research Society meeting E-MRS 2013, May 2013, Strasbourg, France. <hal-00918729>
  • Cédric Robert, Charles Cornet, Olivier Durand, K. Pereira da Silva, Pascal Turban, et al.. gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs). European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France. <hal-00918730>
  • Cédric Robert, Charles Cornet, K. Pereira da Silva, Pascal Turban, S. Mauger, et al.. Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation. Compound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan. <hal-00918734>
  • Anne Ponchet, Julien Stodolna, Charles Cornet, Antoine Létoublon, Thanh Tra Nguyen, et al.. Origin and observations of extended defects in III-V epilayers on Si. International Workshop "Silicon & Photonics", Jun 2013, Rennes, France. <hal-00918738>
  • Charles Cornet, Cédric Robert, Samy Almosni, Thanh Tra Nguyen, Thomas Quinci, et al.. GaAsPN compounds for Si photonics. International Workshop "Silicon & Photonics", Jun 2013, Rennes, France. <hal-00918743>
  • Samy Almosni, Cédric Robert, Charles Cornet, Thanh Tra Nguyen, Yanping Wang, et al.. Optimisation des propriétés structurale de l'interface GaP/Si et des propriétés électroniques de cellules solaires GaAsPN/GaP pour la fabrication de cellule tandem. Journées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France. <hal-00918758>
  • Thomas Quinci, Renaud Varache, Yanping Wang, Charles Cornet, Antoine Létoublon, et al.. New concept of photovoltaic heterostructure GaP/c-Si : AFORS-HET simulation and first pseudomorphic approach. Journées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France. <hal-00918767>
  • Antoine Létoublon, Thanh Tra Nguyen, Yanping Wang, Samy Almosni, Charles Cornet, et al.. Analyse quantitative de la perfection cristalline de nanocouches épitaxiales GaP/Si. Xème colloque rayons X et matière, Nov 2013, Nantes, France. <hal-00918790>
  • Yanping Wang, Thanh Tra Nguyen, Antoine Létoublon, Charles Cornet, Nicolas Bertru, et al.. Analyse quantitative des micromacles dans des nanocouches épitaxiales GaP/Si pour la photonique sur silicium. Xème colloque rayons X et matière, Nov 2013, Nantes, France. <hal-00918791>
  • Jithesh Kuyyalil, Thanh Tra Nguyen, Thomas Quinci, Charles Cornet, Antoine Létoublon, et al.. Growth of GaP on biatomic Si steps using a UHVCVD-MBE cluster. euro-MBE conference, Mar 2013, Levi, Finland. <hal-00918666>
  • Charles Cornet, Cédric Robert, Thanh Tra Nguyen, Yanping Wang, Samy Almosni, et al.. Intégration optique par croissance directe de nanostructures III-V sur silicium. 14èmes Journées Nano, Micro et Optoélectronique (JNMO), May 2013, Evian, France. <hal-00918745>
  • Charles Cornet, Tony Rohel, Olivier Dehaese, Nicolas Chevalier, Antoine Létoublon, et al.. Développement d'un cluster de croissance UHVCVD-MBE pour l'intégration pseudomorphique III-V/Si. Colloque annuel du GDR CNRS Pulse, Jul 2013, Aix-en-Provence, France. <hal-00918749>
  • Cédric Robert, Mathieu Perrin, Charles Cornet, Philippe Barate, Andrea Balocchi, et al.. Carrier lifetime and relaxation dynamics in (In)GaAs/GaP quantum dots. International Symposium on Physics and Applications of Laser Dynamics IS-PALD, Oct 2013, Paris, France. <hal-00918752>
  • Catherine Bougerol, Joël Eymery, Charles Cornet, Antoine Létoublon, Christophe Durand. HR-TEM study of GaN-GaP type II interfaces. 18th Microscopy of Semiconducting Materials MSMXVIII, Apr 2013, Oxford, United Kingdom. <hal-00918664>
  • Julien Stodolna, F. Demangeot, Anne Ponchet, Thanh Tra Nguyen, Antoine Létoublon, et al.. Crystalline defects in GaP layers grown on Si (001). euro-MBE conference 2013, Mar 2013, Levi, Finland. <hal-00918665>
  • Yu Zhao, Nicolas Bertru, Hervé Folliot, Charles Cornet, S. Mauger, et al.. Sb surface mediated growth of InAs on InP(100) and (311)B substrates. Euro-mbe conference, Mar 2013, Levi, Finland. <hal-00918667>
  • Pierre Râle, Samy Almosni, Charles Cornet, L. Lombez, Sana Laribi, et al.. Toward a III-V/Si tandem solar cell : characterization and modeling. European materials research Society meeting E-MRS 2013, May 2013, Strasbourg, France. <hal-00918728>
  • Samy Almosni, Charles Cornet, Thomas Quinci, Thanh Tra Nguyen, Jithesh Kuyyalil, et al.. UHVCVD-MBE growth for tandem solar cells. 4th PhotoVoltaic Technical Conference (PVTC 2013), May 2013, Aix-en-Provence, France. <hal-00918732>
  • Samy Almosni, Charles Cornet, Thomas Quinci, Thanh Tra Nguyen, Jithesh Kuyyalil, et al.. UHVCVD-MBE growth cluster for III-N-V/Si solar cells. Compound semiconductors week, ISCS, 2013, May 2013, Kobe, Japan. <hal-00918735>
  • Olivier Durand, Samy Almosni, Cédric Robert, Thanh Tra Nguyen, Yanping Wang, et al.. Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates : toward the III-V/Si Concentrated Photovoltaics. International Symposium on Inorganic and Environmental Materials, Oct 2013, Rennes, France. <hal-00918754>
  • Charles Cornet, Pascal Turban, Cédric Robert, Sylvain Tricot, Mathieu Perrin, et al.. Boîtes quantiques semi-conductrices : relation entre morphologie, structure électronique et propriétés optiques. Journées Nanosciences et Nanotechnologies du Nord Ouest 2013 (J2NO 2013), Nov 2013, Rennes, France. <hal-00918787>
  • Olivier Durand, Thanh Tra Nguyen, Yanping Wang, Antoine Létoublon, Charles Cornet, et al.. Advanced X-ray analyses on epitaxially-grown thin films for optoelectronic applications. 15th International Conference of Physical Chemistry - ROMPHYSCHEM-15, Sep 2013, Bucharest, Romania. <hal-00918793>
  • Cédric Robert, M. Nestoklon, Charles Cornet, Olivier Durand, Jacky Even, et al.. Tight binding simulations in III-V structures on Si. International Workshop "Silicon & Photonics", Jun 2013, Rennes, France. <hal-00918742>
  • Julien Stodolna, F. Demangeot, Anne Ponchet, Nicolas Bertru, Olivier Durand, et al.. Etude par TEM et DRX des défauts cristallins dans des couches épitaxiées par MBE de GaP sur Silicium (001). Colloque annuel du GDR CNRS Pulse, Jul 2013, Aix-en-Provence, France. <hal-00918748>
  • Charles Cornet, Thanh Tra Nguyen, Thomas Quinci, Samy Almosni, Jithesh Kuyyalil, et al.. Enhanced incorporation of nitrogen on atomic step edges adsorption sites in diluted nitrides alloys. euro-MBE conference, Mar 2013, Levi, Finland. <hal-00918668>
  • Jacky Even, Laurent Pedesseau, Jean-Marc Jancu, Cédric Robert, Olivier Durand, et al.. Raccordements de bandes et profils de constantes diélectriques pour des hétérostructures 2D à semiconducteurs. GDR co-DFT, May 2013, guidel, France. <hal-00827732>
  • Alain Rolland, Laurent Pedesseau, Jacky Even, Samy Almosni, Cédric Robert, et al.. Design of a lattice-matched III-V-N/Si photovoltaic tandem cell monolithically integrated on silicon substrate. 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2013), Aug 2013, Vancouver, Canada. Springer Verlag (ISSN: 0306-8919), Optical and Quantum Electronics, 46 (10), pp.1397-1403, 2014, Special Issue: Numerical Simulation of Optoelectronic Devices NUSOD’13. <10.1007/s11082-014-9909-z>. <hal-00951949>
  • Thanh Tra Nguyen, Cédric Robert, Charles Cornet, Weiming Guo, Antoine Létoublon, et al.. Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si. Photonics west 2012, Jan 2012, San Fransisco, United States. SPIE, 8268, pp.82681H, 2012, <10.1117/12.910279>. <hal-00654337>
  • Cédric Robert, Thanh Tra Nguyen, Charles Cornet, Pascal Turban, Mathieu Perrin, et al.. (In,Ga)As/GaP quantum dots for monolithic integration on silicon. 31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland. AIP (ISBN: 978-0-7354-1194-4), 1566, 2012. <hal-00726878>
  • Cédric Robert, Mathieu Perrin, Charles Cornet, Jacky Even, Olivier Durand, et al.. atomistic modelling of GaNAsP/GaPN type I quantum well heterostructures. 31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland. AIP (ISBN: 978-0-7354-1194-4), 1566, 2013. <hal-00726874>
  • Cédric Robert, Thanh Tra Nguyen, Mathieu Perrin, Charles Cornet, Antoine Létoublon, et al.. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon application. European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. Elsevier (ISSN : 0040-6090, ESSN : 0040-6090), Thin Solid Films, 541, pp.87-91, 2013, Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III. <10.1016/j.tsf.2012.10.134>. <hal-00918657>
  • Samy Almosni, Cédric Robert, Thanh Tra Nguyen, Charles Cornet, Antoine Létoublon, et al.. InGaPN and GaAsPN layers for tandem solar cells on silicon. European materials research society international conference (EMRS), 2012, Strasbourg, France. <hal-00726850>
  • Cédric Robert, Charles Cornet, Pascal Turban, Thanh Tra Nguyen, Sylvain Tricot, et al.. Optical and structural properties of (In,Ga)As/GaP quantum dots : C2 to C2v symmetry transition during the ripening process. international conference on MBE, 2012, Nara, Japan. <hal-00726776>
  • Samy Almosni, Cédric Robert, Charles Cornet, Christophe Levallois, Thomas Quinci, et al.. Potentiality of GaAsPN and InGaPN for photovoltaic applications. 3rd PhotoVoltaic Technical Conference (PVTC 2012), Jun 2012, Aix-en-Provence, France. <hal-00726855>
  • Cédric Robert, Thanh Tra Nguyen, Charles Cornet, Pascal Turban, Mathieu Perrin, et al.. Theoretical and experimental study of (In,Ga)As/GaP quantum dots. International Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. Springer (ISSN : 1931-7573, ESSN : 1556-276X), Nanoscale Research Letters, 7, pp.643, 2012, International Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012). <10.1186/1556-276X-7-643>. <hal-00726861>
  • Laurent Pedesseau, Jacky Even, Jean-Marc Jancu, Eric Tea, Charles Cornet, et al.. Contribution of DFT code to photovoltaic applications. Journées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France. <hal-00788493>
  • Thomas Quinci, Jithesh Kuyyalil, Thanh Tra Nguyen, Charles Cornet, Antoine Létoublon, et al.. Growth of III-V GaP on biatomic Si steps using a UHVCVD-MBE cluster. Journées nationales du photovoltaïque 2012, 2012, Chantilly, France. <hal-00788460>
  • Samy Almosni, Pierre Râle, Cédric Robert, Thanh Tra Nguyen, Charles Cornet, et al.. Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells. Journées nationales du photovoltaïque (JNPV 2012), 2012, Chantilly, France. <hal-00788478>
  • Pierre Râle, Eric Tea, Samy Almosni, Charles Cornet, Laurent Lombez, et al.. Toward a III-V/Si tandem solar cell: characterization and modeling. Journées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France. <hal-00788485>
  • Olivier Durand, Samy Almosni, Cédric Robert, Thanh Tra Nguyen, Charles Cornet, et al.. Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cells. Journées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France. 2012. <hal-00788544>
  • Alexandre Bondi, Charles Cornet, Soline Richard, Thanh Tra Nguyen, Antoine Létoublon, et al.. Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy. European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. Elsevier (ISSN : 0040-6090, ESSN : 0040-6090), Thin Solid Films, 541, pp.72-75, 2013, Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III. <10.1016/j.tsf.2012.11.132>. <hal-00788308>
  • Thanh Tra Nguyen, Cédric Robert, Antoine Létoublon, Charles Cornet, Thomas Quinci, et al.. Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers. European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. Elsevier (ISSN : 0040-6090, ESSN : 0040-6090), Thin Solid Films, 541, pp.36-40, 2013, Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III. <10.1016/j.tsf.2012.11.116>. <hal-00788396>
  • Thanh Tra Nguyen, Cédric Robert, Emmanuel Giudicelli, Antoine Létoublon, Charles Cornet, et al.. Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates. 17th International Conference on Molecular Beam Epitaxy (MBE 2012), Sep 2012, Nara, Japan. Elsevier (ISSN : 0022-0248), Journal of Crystal Growth, 378, pp.25-28, 2013, The 17th International Conference on Molecular Beam Epitaxy. <10.1016/j.jcrysgro.2012.11.046>. <hal-00788399>
  • Cédric Robert, Charles Cornet, Thanh Tra Nguyen, Mathieu Perrin, Antoine Létoublon, et al.. Développement d'un laser sur silicium dans l'approche pseudomorphique. Journées nationales de l'optique guidée, 2012, Lyon, France. <hal-00788434>
  • Thanh Tra Nguyen, Cédric Robert, Charles Cornet, Weiming Guo, Antoine Létoublon, et al.. coherent integration of photonics on silicon through the growth of GaP/Si. technical meeting of Sandie european network of excellence, 2012, Berlin, Germany. <hal-00788526>
  • Cédric Robert, Thanh Tra Nguyen, Samy Almosni, Thomas Quinci, Mathieu Perrin, et al.. Dilute nitride GaNAsP for photonic applications on silicon. International Symposium on nitrides (ISNT), 2012, saint-Malo, France. <hal-00726885>
  • Charles Cornet, Pascal Turban, Cédric Robert, Thanh Tra Nguyen, Sylvain Tricot, et al.. Unusual C2 symmetry properties of (In,Ga)As/GaP quantum dots morphology. international conference on superlattice, nanostructures and nanodevices (ICSNN), 2012, Dresden, Germany. <hal-00726864>
  • Cédric Robert, Mathieu Perrin, Charles Cornet, Jacky Even, Olivier Durand, et al.. tight-binding calculations of Ga(NAsP)/GaP(N) quantum wells for photonic integration on silicon. international conference on superlattice, nanostructures and nanodevices, 2012, Dresden, Germany. <hal-00726868>
  • Abdallah Sakri, Cédric Robert, Laurent Pedesseau, Charles Cornet, Jacky Even, et al.. intrinsic optical confinement for ultrathin InAs/GaAs/GaP quantum well superlattices. international conference on superlattice, nanostructures and nanodevices, 2012, Dresden, Germany. <hal-00726871>
  • Abdallah Sakri, Cédric Robert, Charles Cornet, Laurent Pedesseau, Jacky Even, et al.. Intrinsic optical confinement for ultrathin InAsN quantum well superlattices. 31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland. AIP (ISBN: 978-0-7354-1194-4), 1566, pp.464, 2013, <10.1063/1.4848486>. <hal-00726876>
  • Samy Almosni, Cédric Robert, Thomas Quinci, Thanh Tra Nguyen, Charles Cornet, et al.. Evaluation of InGaP(N) and GaAsP(N) materials lattice-matched to Si for multi-junction solar cells. international conference on MBE, 2012, Japan. 2012. <hal-00726772>
  • Weiming Guo, Thanh Tra Nguyen, Antoine Létoublon, G. Elias, Charles Cornet, et al.. Structural characterisation of GaP/Si nanolayers. European Materials Research Society 2011, May 2011, Strasbourg, France. <hal-00654330>
  • Weiming Guo, Thanh Tra Nguyen, G. Elias, Antoine Létoublon, Charles Cornet, et al.. Structural charaterisation of GaP/Si nanolayers. Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. IEEE Xplore Digital Library, pp.1-4, 2011, Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials (CSW/IPRM), 2011. <http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5978357>. <hal-00654292>
  • Alexandre Bondi, Charles Cornet, Weiming Guo, Olivier Dehaese, Nicolas Chevalier, et al.. MBE growth of (GaAsPN/GaPN)/GaP quantum wells light emitting diode. euro-MBE 2011, Mar 2011, Alpe d'Huez, France. <hal-00654313>
  • Thanh Tra Nguyen, Cédric Robert, Charles Cornet, Pascal Turban, Sylvain Tricot, et al.. Single InAs/InP quantum dashes and dots morphology on (001) and (113)B substrates. Journées Boîtes Quantiques 2011 (JBQ 2011), Jun 2011, Toulouse, France. <hal-00654323>
  • Charles Cornet, Pascal Turban, Nicolas Bertru, Sylvain Tricot, Olivier Dehaese, et al.. Single InAs quantum dots morphology and local electronic properties on (113)B InP substrate. euro-MBE, Mar 2011, Alpe d'Huez, France. <hal-00654305>
  • Weiming Guo, G. Elias, Antoine Létoublon, Charles Cornet, A. Ponchet, et al.. structural characterization of MBE grown GaP/Si nanolayers. euro-MBE, Mar 2011, Alpe d'Huez, France. <hal-00654309>
  • Cédric Robert, Thanh Tra Nguyen, Charles Cornet, Nicolas Bertru, Nicolas Chevalier, et al.. Room temperature photoluminescence if InxGa1-xAs quantum dots on GaP substrate. Journées Boîtes Quantiques 2011 (JBQ 2011), Jun 2011, Toulouse, France. <hal-00654317>
  • Cédric Robert, Alexandre Bondi, Jacky Even, Charles Cornet. Développement de nanostructures sur silicium pour l'émission laser à grande longueur d'onde. Journées Nationales du Réseau Doctoral en Micro-nanoélectronique 2011, May 2011, Paris, France. <hal-00654315>
  • Olivier Durand, Antoine Létoublon, D. J. Rogers, F. Hosseini Teherani, Charles Cornet, et al.. Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-merit. Photonics West, Jan 2011, San Fransisco, United States. 7940, pp.79400L, 2011, <10.1117/12.877661>. <hal-00654279>
  • Charles Cornet, Cédric Robert, Thanh Tra Nguyen, Weiming Guo, Alexandre Bondi, et al.. Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon. Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. IEEE Xplore Digital Library, pp.1, 2011, Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials (CSW/IPRM), 2011. <http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5978352>. <hal-00654285>
  • Olivier Durand, Antoine Létoublon, D. J. Rogers, F. Hosseini Teherani, Charles Cornet, et al.. Interpretation of the two-components observed in high resolution X-ray diffraction omega-scan peaks from mosaic thin films: case of both PLD-grown ZnO on c-sapphire substrate and MBE-grown GaP on silicon substrate. 3rd International Workshop "Current trends and advanced ellipsometric and XRD techniques for the characterization of nanostructured materials", Sep 2011, Bucharest, Romania. <hal-00726686>
  • Antoine Létoublon, Weiming Guo, Charles Cornet, Alexandre Boulle, M. Veron, et al.. X-ray study of antiphase domains and their stability in MBE grown GaP on Si. 16th International Conference on Molecular Beam Epitaxy (ICMBE 2010), Aug 2010, Berlin, Germany. Elsevier (ISSN : 0022-0248), Journal of Crystal Growth, 323 (1), pp.409-412, 2011, Proceedings of the 16th International Conference on Molecular Beam Epitaxy (ICMBE). <10.1016/j.jcrysgro.2010.10.137>. <hal-00504596>
  • Charles Cornet, Antoine Létoublon, Weiming Guo, Alexandre Bondi, Soline Richard, et al.. Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur silicium. Séminaire PONANT 2010, Jul 2010, Rennes, France. ponant2010.foton.cnrs.fr, pp.9-11, 2010, Séminaire PONANT 2010 - recueil des communications. <http://ponant2010.foton.cnrs.fr/>. <hal-00504506>
  • Jacky Even, Soline Richard, Charles Cornet, Laurent Pedesseau, Andrei Schliwa, et al.. Semi-analytical evaluation of linear and non-linear piezoelectric potential for quantum nanostructures with axial symmetry. Workshop on Empirical Methods in Semiconductor Nano-Structures Design and Modelling, Jun 2010, Manchester, United Kingdom. <hal-00641220>
  • Jacky Even, Frederic Grillot, Kiril Veselinov, Rozenn Piron, Charles Cornet, et al.. Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasers. SPIE Photonics Europe 2010, Apr 2010, Bruxelles, Belgium. Proc. SPIE, 7720, pp.77202F, 2010, Semiconductor Lasers and Laser Dynamics IV. <10.1117/12.863580>. <hal-00492346>
  • Alexandre Bondi, Weiming Guo, Hervé Folliot, Charles Cornet, Nicolas Chevalier, et al.. Réalisation d'une DEL à puits quantiques de GaAsP sur substrat GaP. INNOV'INSA (Recherche, développement, innovation et transfert à l'INSA), May 2010, Rennes, France. pp.1, 2010. <hal-00504484>
  • Charles Cornet. Intégration cohérente de l'optique sur Silicium pour des applications à la télécommunication et au photovoltaïque. Journée Scientifique Jeunes Chercheurs MMS Mesure, Modélisation et Simulation, Jun 2010, Rennes, France. 2010. <hal-00504495>
  • Charles Cornet, Antoine Létoublon, Julien Lapeyre, Cyril Paranthoen, Christophe Levallois, et al.. caractérisation de semi-conducteurs III-V nanostructurés par microscopie à force atomique. Journées de la microscopie champ proche Bretagne, Jun 2010, Rennes, France. pp.1, 2010. <hal-00504500>
  • Weiming Guo, Antoine Letoublon, Charles Cornet, Tony Rohel, Nicolas Chevalier, et al.. Heterogeneous growth and characterisation of III-V material on Si (001) substrate for photonics applications. journées de la Société Française de métallurgie et matériaux (SF2M) 2009, Jun 2009, Rennes, France. pp.W. Guo, 2009. <hal-00486672>
  • Weiming Guo, Charles Cornet, Antoine Létoublon, Tony Rohel, Nicolas Chevalier, et al.. Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on Silicon. EMRS, Jun 2009, Strasbourg, France. pp.1, 2009. <hal-00491771>
  • Georges Elias, Charles Cornet, Philippe Caroff, Christophe Levallois, Antoine Létoublon, et al.. Self-organized growth of InAs quantum dots on InP substrate emitting at 1.55-μm. Second French Research Organizations - Tohoku University Joint Workshop on Frontier Materials, Nov 2009, Sendai, Japan. p-23, 2009. <hal-00491459>
  • Soline Richard, Jean-Philippe Burin, Christophe Labbe, Charles Cornet, Hervé Folliot, et al.. Photocurrent study of InAs/GaInAsP(Q1.18) quantum dots. Indium Phosphide and Related Materials (IPRM), May 2008, Versailles, France. pp.309-11, 2008, <10.1109/ICIPRM.2008.4702977>. <hal-00501639>
  • Weiming Guo, Antoine Létoublon, Alexandre Bondi, Charles Cornet, Jacky Even, et al.. Growth and characterization of single phase GaP on Si(001). Colloque de l'Association Française de Cristallographie 2008, Jul 2008, Rennes, France. pp.W. Guo, 2008. <hal-00486678>
  • Alexandre Bondi, Weiming Guo, Hervé Folliot, Charles Cornet, Christophe Labbe, et al.. Photoluminescence de nanostructures sur substrat GaP/Si. Journées Nanosciences de Bretagne (JNB2), May 2008, Rennes, France. pp.1, 2008. <hal-00489402>
  • Weiming Guo, Alexandre Bondi, Bassem Alsahwa, Charles Cornet, Antoine Létoublon, et al.. Toward a light-emitter on Si: Growth of InAs and InP nanostructure on GaP substrate. (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1, 2008. <hal-00491776>
  • Weiming Guo, Alexandre Bondi, Hervé Folliot, Charles Cornet, Antoine Létoublon, et al.. Croissance par MBE de Boites quantiques InP sur GaP/Si. journées nanoscience de Bretagne, Jun 2008, Nantes, France. pp.1, 2008. <hal-00491778>
  • Weiming Guo, Alexandre Bondi, Charles Cornet, Hervé Folliot, Antoine Létoublon, et al.. First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE. 9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. 6 (10), pp.2207, 2009, <10.1002/pssc.200881722>. <hal-00491426>
  • Alexandre Bondi, Weiming Guo, Laurent Pedesseau, Soline Richard, Hervé Folliot, et al.. Light emitting diodes on silicon substrates: preliminary results. TNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. 6 (10), pp.2212-16, 2009, <10.1002/pssc.200881728>. <hal-00491905>
  • Alexandre Bondi, Weiming Guo, Laurent Pedesseau, Soline Richard, Hervé Folliot, et al.. Preliminary results for the realization of light emitters on silicon substrate. SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1, 2008. <hal-00491914>
  • Soline Richard, Jean-Philippe Burin, Charles Cornet, Tony Rohel, Abdulhadi Nakkar, et al.. PHOTOCURENT SPECTROSCOPY OF InAs/GaInAsP(Q1.18) QUANTUM DOTS. LWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. <hal-00490465>
  • Abdulhadi Nakkar, Hervé Folliot, Alain Le Corre, Ibrahim Alghoraibi, Christophe Labbé, et al.. Optical properties and morphology of the quantum dots InAs/InP (311)B characterized by photoluminescence. LWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. pp.1, 2007. <hal-00491995>
  • Laurent Pedesseau, Charles Cornet, François Doré, P. -Y. Prodhomme, P. Blaise, et al.. Simulation of electronic properties of semiconductor nanostructures for optoelectronic applications. Journées de GDR-DFT, Mar 2007, Autrans, France. <hal-00491830>
  • Laurent Pedesseau, Charles Cornet, Jacky Even, P. -Y. Prodhomme, P. Blaise. Study of InAs/GaP interfaces from fisrt-principles modelling. International Workshop on Long Wavelength Quantum Dots : Growth and Applications, Jul 2007, Rennes, France. pp.1, 2007. <hal-00491834>
  • Charles Cornet, Olivier Dehaese, Laurent Pedesseau, Ibrahim Alghoraibi, Tony Rohel, et al.. Stransky-Krastanow Gas Source MBE growth and optical properties of InAs/GaP quantum dots. euro-MBE conference, Mar 2007, Sierra nevada, Granada, France. pp.1, 2007. <hal-00491810>
  • N. Chauvin, E. Dupuy, R. Djondang, M. Gendry, G. Bremond, et al.. Influence of shape and size of InAs/InP(001) quantum islands grown by SSMBE on the microphotoluminescence emission in the 1.5µm spectral range. International Workshop on Long Wavelength Quantum Dots : Growth and Applications (LWQD), Jul 2007, Rennes, France. pp.1, 2007. <hal-00491794>
  • Laurent Pedesseau, Charles Cornet, François Doré, Jacky Even, Andrei Schliwa, et al.. From k·p to atomic calculations applied to semiconductor heterostructures. Physics-based mathematical models of low-dimensional semiconductor nanostructures: analysis and computation, Nov 2007, Banff, Alberta, Canada. Journal of Physics Conference Series, 107, pp.012009, 2008, <10.1088/1742-6596/107/1/012009>. <hal-00491442>
  • Laurent Pedesseau, Jacky Even, François Doré, Charles Cornet. Atomic Calculations Applied to Semiconductor Hetero Structures. International Conference of Computational Methods in Sciences and Enginnering 2007 (ICCMSE 2007), Sep 2007, Corfou, Greece. 963, pp.1331, 2007, <10.1063/1.2835997>. <hal-00491472>
  • Christophe Labbé, Charles Cornet, Hervé Folliot, Philippe Caroff, Christophe Levallois, et al.. Dynamics spectroscopy in 1.55 µm InAs/InP quantum dots under high resonant excitation. IWSQDA (International Workshop on Semiconductor quantum dot based devices and applications), Mar 2006, Paris, France. pp.1, 2006. <hal-00491870>
  • Charles Cornet, Christophe Levallois, Philippe Caroff, Laurent Joulaud, Hervé Folliot, et al.. Optical characterisation of InAs/InP self-assembled quantum dots for optimisation of lasing properties. Sandie Optics Task Force meeting, Technische Universitat Berlin, January 12-13 (2006), Jan 2006, Berlin, Germany. pp.1, 2006. <hal-00504470>
  • Charles Cornet, Andrei Schliwa, Manus Hayne, Nicolas Chauvin, François Doré, et al.. InAs/InP quantum dots: from single to coupled dots applications. International Conference on Quantum Dots, May 2006, Chamonix, France. 3 (11), pp.4039, 2006, <10.1002/pssc.200671623>. <hal-00491717>
  • Charles Cornet, Manus Hayne, Andrei Schliwa, François Doré, Jacky Even, et al.. InAs/InP quantum dots (QDs) : from fundamental understanding to coupled QD 1.55 µm laser applications. International Conference on SuperLattices, Nano-structures and Nano-Devices, Jul 2006, Istanbul, Turkey. 4 (2), pp.458, 2006, <10.1002/pssc.200673215>. <hal-00491839>
  • Charles Cornet, Manus Hayne, Andrei Schliwa, François Doré, Christophe Labbé, et al.. Theory and experiment of InAs/InP quantum dots : from calculations to laser emission. 28th International Conference on the Physics of Semiconductor, Jul 2006, Vienne, Austria. 893, pp.779-780, 2006, <10.1063/1.2730122>. <hal-00491853>
  • François Doré, Charles Cornet, Philippe Caroff, A. Ballestar, Jacky Even, et al.. InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 μm photoluminescence. 4th International Conference on Semiconductor Quantum Dots (QD 2006), May 2006, Chamonix, France. 3 (11), pp.3920, 2006, <10.1002/pssc.200671622>. <hal-00491729>
  • Charles Cornet, Manus Hayne, Andrei Schliwa, François Doré, Jacky Even, et al.. InAs/InP quantum dots (QD) properties : How to improve QD laser performance. International Workshop on Semiconductor Quantum Dot Based Devices and Applications, Mar 2006, Paris, France. pp.1, 2006. <hal-00491848>
  • Manus Hayne, Charles Cornet, Jacky Even, Christophe Labbé, Hervé Folliot, et al.. Charge carrier redistribution in ordered Arrays of laterally coupled self-assembled quantum dots. UK Compound Semiconductors conference, Jul 2006, Sheffield, United Kingdom. pp.1, 2006. <hal-00491858>
  • Christophe Labbé, Charles Cornet, Hervé Folliot, Philippe Caroff, Christophe Levallois, et al.. Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under high resonant excitation. ICSSN (International Conference on SuperLattices, Nano-structures and Nano-Devices), Jul 2006, Istanbul, Turkey. 4 (2), pp.454, 2006, <10.1002/pssc.200673214>. <hal-00491873>
  • Christophe Labbé, Charles Cornet, Hervé Folliot, Jacky Even, Philippe Caroff, et al.. Carrier relaxation dynamics of 1.55 µm InAs/InP quantum dots under high resonant excitation. 28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. 893, pp.991, 2007, <10.1063/1.2730228>. <hal-00491468>
  • François Doré, Jacky Even, Charles Cornet, Andrei Schliwa, Nicolas Bertru, et al.. A theoretical and experimental study of lambda>2 µm luminescence of quantum dots on InP substrate. 28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. 893, pp.889, 2007, <10.1063/1.2730177>. <hal-00491466>
  • Charles Cornet, Christophe Labbé, Jacky Even, Slimane Loualiche. Nanotechnologies: Etude des boites quantiques pour des applications télécoms, environnementales et médicales. journées CIES : moniteurs du grand-ouest, 2005, Rennes, France. <hal-00504413>
  • Charles Cornet, Christophe Labbé, Hervé Folliot. Properties of 1.55 microns quantum dots: Simulation, calculation and optical characterization. invited seminar at the KU Leuven, 2005, Leuven, Belgium. <hal-00504414>
  • François Doré, Charles Cornet, Philippe Caroff, A. Ballestar, Jacky Even, et al.. First observation of wavelength greater than 2 microns photoluminescence of quantum dots on InP (100) substrate. "Mid Infrared Optoelectronics : Materials and Devices" conference, Lancaster, UK, September (2005)., Sep 2005, Lancaster, United Kingdom. pp.1, 2005. <hal-00504462>
  • Jacky Even, Charles Cornet, François Doré, Andrei Schliwa, A. Ballestar, et al.. InAsSb/InP quantum dots for midwave infrared emitters : a theoretical study. Mid Infrared Optoelectronics : Materials and Devices : MIOMD conference, 2005, Lancaster, United Kingdom. pp.1, 2005. <hal-00504452>
  • François Doré, Charles Cornet, A. Ballestar, Jacky Even, Olivier Dehaese, et al.. First observation of 2.4 microns photoluminescence of InAsSb/InP quantum dots on (100) InP substrate. Narrow Gap Semiconductors conference, Jul 2005, Toulouse, France. pp.1, 2005. <hal-00504441>
  • Patrice Miska, Kiril Veselinov, Frederic Grillot, Jacky Even, Charly Platz, et al.. Carrier dynamics and saturation effect in (311)B InAs/InP quantum dot lasers. PHASE 2005, international workshop on physics and applications of semiconductors lasers, 2005, Metz, France. pp.1, 2005. <hal-00504411>
  • François Doré, Charles Cornet, Andrei Schliwa, A. Ballestar, Jacky Even, et al.. InAsSb/InGaAs quantum nanostructures on InP (100)substrate: observation of 2.35 μm photoluminescence. 32nd International Symposium on Compound Semiconductors, Sep 2005, Rust, Germany. 3 (3), pp.524, 2006, <10.1002/pssc.200564132>. <hal-00491737>
  • François Doré, A. Ballestar, Charles Cornet, Nicolas Bertru, Ibrahim Alghoraibi, et al.. Structures à îlots quantiques sur substrat InP(100)pour l'émission dans le moyen infrarouge (2−5 µm). 9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. 135, pp.283, 2006, <10.1051/jp4:2006135090>. <hal-00491724>
  • Charles Cornet, Manus Hayne, Christophe Levallois, Philippe Caroff, Estelle Homeyer, et al.. Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement. 9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. 135, pp.141, 2006, <10.1051/jp4:2006135031>. <hal-00491480>
  • Charles Cornet, Charly Platz, Jacky Even, Patrice Miska, Christophe Labbé, et al.. Theoretical Description Of The Electronic Coupling Between A Wetting Layer And A QD Superlattice Plane. International Conference on Physics of Semiconductors (ICPS 27), Jul 2004, Flagstaff, United States. 772, pp.787, 2005, <10.1063/1.1994342>. <hal-00504383>
  • Charles Cornet, Christophe Labbé, Charly Platz, Jacky Even, Hervé Folliot, et al.. Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniques. journée des doctorants de Rennes, Dec 2004, Rennes, France. pp.1, 2004. <hal-00504407>
  • Charles Cornet, Charly Platz, Patrice Miska, Christophe Labbé, Hervé Folliot, et al.. Reciprocal space description of the electronic coupling between a wetting layer and a QD superlattice plane. CECAM workshop on "modeling of self-assembled semi-conductors nanostructures", Jun 2004, Lyon, France. pp.1, 2004. <hal-00504404>
  • Jacky Even, Charles Cornet, Slimane Loualiche. Exact solutions of the Schrödinger equation in disk-shaped quantum dots and rings, infinite and finite confinement potentials, Stark and excitonic effect. CECAM workshop on "modeling of self-assembled semi-conductors nanostructures", Jun 2004, Lyon, France. pp.1, 2004. <hal-00504401>
  • Charles Cornet, Christophe Labbé, Jacky Even, Charly Platz, Olivier Dehaese, et al.. Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniques. Journées de la matière condensée, 2004, Nancy, France. pp.1, 2004. <hal-00504395>

Pré-publication, Document de travail1 document

  • Alain Rolland, L. Pedesseau, Alexandre Beck, M. Kepenekian, Claudine Katan, et al.. Computational design of high performance hybrid perovskite on silicon tandem solar cells. 2016. <hal-01275497>

Poster10 documents

  • Samy Almosni, Charles Cornet, Antoine Létoublon, Nicolas Bertru, Alain Le Corre, et al.. Lattice-matched GaAsPN/GaP single junction solar cell for high-efficiency tandem solar cells on silicon. Euro-MBE 2015, Mar 2015, Canazei, Italy. 2015. <hal-01147439>
  • Jean-Philippe Gauthier, Cédric Robert, Samy Almosni, Charles Cornet, Yoan Léger, et al.. Carrier injection in GaP-based laser waveguides and dilute nitrides gain medium. Euro-MBE 2015, Mar 2015, Canazei, Italy. 2015. <hal-01147468>
  • Jean-Philippe Gauthier, Cédric Robert, Samy Almosni, Charles Cornet, Yoan Léger, et al.. Electrical injection in GaP-based laser waveguides and active areas. 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, Indium Phosphide and Related Materials (IPRM 2014), 26th International Conference on, pp.P23, 2014, <http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6880545>. <10.1109/ICIPRM.2014.6880545>. <hal-01114889>
  • Cédric Robert, Katiane Pereira da Silva, Alejandro Goñi, M. Nestoklon, Laurent Pedesseau, et al.. Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots. 32nd International Conference on the Physics of Semiconductors (ICPS 2014), Aug 2014, Austin, United States. 2014. <hal-01115307>
  • Hélène Carrère, Andrea Balocchi, Thierry Amand, Cédric Robert, Mathieu Perrin, et al.. GaAsPN alloys for optoelectronics on Silicon. Compound Semiconductor Week 2014, May 2014, Montpellier, France. 2014. <hal-01115268>
  • Cédric Robert, Mathieu Perrin, Laurent Pedesseau, Yoan Léger, Philippe Barate, et al.. Carrier capture and relaxation in GaAsPN/GaP quantum wells. 32nd International Conference on the Physics of Semiconductors (ICPS 2014), Aug 2014, Austin, United States. 2014. <hal-01115282>
  • Samy Almosni, Pierre Râle, Charles Cornet, Christophe Levallois, Laurent Lombez, et al.. Impact of annealing on the performances of GaAsPN-based solar cells. Compound Semiconductor Week 2014, May 2014, Montpellier, France. 2014. <hal-01115039>
  • Samy Almosni, Cédric Robert, Charles Cornet, Thanh Tra Nguyen, Yanping Wang, et al.. Development of GaAsPN alloy for its integration in III-V/Si tandem solar cell. Workshop on above 25% efficiency solar cells via low cost approaches, Jul 2014, Palaiseau, France. <hal-01115014>
  • Samy Almosni, Pierre Râle, Charles Cornet, Christophe Levallois, Laurent Lombez, et al.. Annealing effect on electrical properties of GaAsPN solar cells. 29th European PV Solar Energy Conference (EU PVSEC 2014), Sep 2014, Amsterdam, Netherlands. 2014. <hal-01115032>
  • Cédric Robert, Charles Cornet, K. Pereira da Silva, Pascal Turban, S. Mauger, et al.. Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation. 25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. <10.1109/ICIPRM.2013.6562587>. <hal-00918662>

Autre publication2 documents

  • Charles Cornet. Contribution to the study of monolithic integration of III-V semiconductors on silicon in the pseudomorphic approach for photonics and photovoltaics. "Habilitation à diriger les recherches” Thesis from Université Rennes 1 (2014). 2014. <hal-01114704>
  • Charles Cornet, Cédric Robert, Yoan Léger. Integration of III-V nanostructures on silicon in the pseudomorphic approach. EPFL internal seminar (Lausanne, Suisse). 2013. <hal-00918789>

Ouvrage (y compris édition critique et traduction)1 document

  • Yoan Léger, Charles Cornet, Cédric Robert. Integrated Lasers on Silicon. 2016, 9781785480621. <hal-01396646>

Thèse1 document

  • Charles Cornet. propriétés électroniques, optiques et dynamiques de boites quantiques auto-organisées et couplées sur substrat InP. Physique [physics]. INSA de Rennes, 2006. Français. <tel-00132644>