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77 résultats
Study of a tunable filter with collinear acoustooptical TE-TM mode conversion in GaAs/AlAs multilayer11th III-V Semiconductor Device Simulation Workshop, 1999, Lille, France
Communication dans un congrès
hal-01556259v1
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Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structuresSemiconductor Science and Technology, 2018, 33 (11), pp.114013. ⟨10.1088/1361-6641/aae354⟩
Article dans une revue
hal-01944345v1
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Growth and properties of GaAsBi thin layers by molecular beam epitaxyInternational Workshop on Bismuth-Containing Semiconductors, Jul 2016, Shanghai, China. 2016
Poster de conférence
hal-01947425v1
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In-situ magnification inferred curvature measurement applied to dilute bismide growth21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès
hal-03358732v1
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Influence of chemical process on structural and optical properties of as-grown and thermal annealed GaAsBi alloys8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany
Communication dans un congrès
hal-01947272v1
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Modelling of interband transitions in GaAs tunnel diodeSemiconductor Science and Technology, 2016, 31 (6), pp.06LT01. ⟨10.1088/0268-1242/31/6/06LT01⟩
Article dans une revue
hal-01857640v1
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Spin properties of dilute bismide alloysThe Physics of Optoelectronic Materials and Devices, In the memory of Prof. Naci Balkan, Mar 2017, Colchester, United Kingdom
Communication dans un congrès
hal-01947255v1
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Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.1-2
Communication dans un congrès
hal-02052796v1
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Dilute Bismides for Optoelectronic ApplicationsThe 8th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN2016), Dr Le Si Dang (IN, France); Prof. Kazuhito Hashimoto (NIMS, Japan); Prof. Nguyen Quang Liem (IMS, Vietnam), Nov 2016, Halong City, Vietnam
Communication dans un congrès
hal-01947444v1
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Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States
Communication dans un congrès
hal-01947411v1
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Fabrication, characterization and simulation of MBE-grown GaAs-based tunnel diodes with type I and type II heterojunctions for multijunction solar cells19th International Conference on Molecular Beam Epitaxy (MBE 2016), Sep 2016, Montpellier, France. 2p., 2016
Poster de conférence
hal-01857639v1
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Thermal annealing effects on optical and structural properties of GaBiAs epilayers: Origin of the thermal annealing-induced redshift in GaBiAsJournal of Alloys and Compounds, 2016, 686, pp.976-981. ⟨10.1016/j.jallcom.2016.05.326⟩
Article dans une revue
hal-01943084v1
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III-V Semiconductor Integrated (De)Modulators/Multiplexers for coherence multiplexed sensor networks10th international conference on solid-state sensors and actuators, 1999, Sendaï, Japan
Communication dans un congrès
hal-01556263v1
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Réalisation de guides d’onde enterrés avec un procédé quasi-planaireJournées Nationales de l'Optique Guidée (JNOG), Jul 2016, Bordeaux, France. 3p
Communication dans un congrès
hal-01768308v1
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III-V based Heterojunction Tunnel for Multijunction Solar CellsPULSE summer school : Epitaxy promises and updates, Sep 2015, Porquerolles, France
Communication dans un congrès
hal-01857568v1
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Transfer of AlGaAs/GaAs crystalline Bragg mirror from a GaAs substrate to a fused silica substrate by direct bondingSPIE Photonics Europe, Apr 2022, Strasbourg, France
Communication dans un congrès
cea-03735678v1
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Type II heterojunction tunnel diodes based on GaAs for multi-junction solar cells: Fabrication, characterization and simulation2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.7777108, ⟨10.1109/NMDC.2016.7777108⟩
Communication dans un congrès
hal-01436488v1
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Forte biréfringence de forme dans guides monomodes de type ruban sur super-réseaux GaAs/AlAsJournées Nationales de l’Optique Guidée, JNOG, 1997, St Etienne, France. pp.199-201
Communication dans un congrès
hal-01557038v1
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Electron spin dynamics in GaAsBi quantum wellsSPIE Photonics WEST, Jan 2017, San Francisco, United States
Communication dans un congrès
hal-01947450v1
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Electron spin dynamics and g-factor in GaAsBiApplied Physics Letters, 2013, 102 (25), pp.252107. ⟨10.1063/1.4812660⟩
Article dans une revue
hal-02050545v1
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Jonctions tunnels à base d'hétérostructures à semiconducteurs III-V pour les cellules solaires multi-jonctions à haut rendementJournées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France
Communication dans un congrès
hal-01857570v1
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Jonctions tunnel AlGaAsSb/AlGaInAs accordées et relaxées sur substrat GaAs pour les applications photovoltaïquesRéunion plénière du GDR PULSE 2017 ( Processus Ultimes d'épitaxie de Semiconducteurs 2017), Oct 2017, Paris, France
Communication dans un congrès
hal-01610933v1
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Self-aligned and stray-field-free electrodes for spintronics: An application to a spin field effect transistorJournal of Applied Physics, 2007, 101 (2), pp.024322. ⟨10.1063/1.2422710⟩
Article dans une revue
hal-02452598v1
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Optical properties of GaBiAs single quantum well structures grown by MBESemiconductor Science and Technology, 2015, 30 (9), pp.094016. ⟨10.1088/0268-1242/30/9/094016⟩
Article dans une revue
hal-01943068v1
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Links between bismuth incorporation and surface reconstruction for GaAsBi growth probed by in situ measurementsJournal of Applied Physics, 2019, Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices, 126 (9), pp.093106. ⟨10.1063/1.5111932⟩
Article dans une revue
hal-02281696v1
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Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs Quantum WellsPhilosophical Magazine, 2010, pp.1. ⟨10.1080/14786435.2010.525543⟩
Article dans une revue
hal-00639780v1
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Highly unbalanced GaAlAs–GaAs integrated Mach–Zehnder interferometer for coherence modulation at 1.3 μmOptics Communications, 1999, 167 (1-6), pp.67-76. ⟨10.1016/S0030-4018(99)00284-9⟩
Article dans une revue
istex
hal-01556258v1
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Technological solutions for embedded oxide-based confinement for new VCSELs architecturesColloque du GDR Oxyfun 2014, Jun 2014, Autrans, France
Communication dans un congrès
hal-01857531v1
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Selective oxidation of AlGaAs for confinement in III-V photonic devices16th NAMIS workshop ” Micro- and nanosystems, large area electronics and biofunctionalities towards novel integrated smart systems“, Jun 2018, Oulu, Finland. 36p
Communication dans un congrès
hal-01855298v1
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Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctionsJournal of Physics D: Applied Physics, 2017, 50 (38), pp.385109. ⟨10.1088/1361-6463/aa804e⟩
Article dans une revue
hal-01610949v1
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