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77 résultats
Growth and properties of GaAsBi thin layers by molecular beam epitaxyInternational Workshop on Bismuth-Containing Semiconductors, Jul 2016, Shanghai, China. 2016
Poster de conférence
hal-01947425v1
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Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structuresSemiconductor Science and Technology, 2018, 33 (11), pp.114013. ⟨10.1088/1361-6641/aae354⟩
Article dans une revue
hal-01944345v1
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Study of a tunable filter with collinear acoustooptical TE-TM mode conversion in GaAs/AlAs multilayer11th III-V Semiconductor Device Simulation Workshop, 1999, Lille, France
Communication dans un congrès
hal-01556259v1
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In-situ magnification inferred curvature measurement applied to dilute bismide growth21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès
hal-03358732v1
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Influence of chemical process on structural and optical properties of as-grown and thermal annealed GaAsBi alloys8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany
Communication dans un congrès
hal-01947272v1
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Spin properties of dilute bismide alloysThe Physics of Optoelectronic Materials and Devices, In the memory of Prof. Naci Balkan, Mar 2017, Colchester, United Kingdom
Communication dans un congrès
hal-01947255v1
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Dilute Bismides for Optoelectronic ApplicationsThe 8th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN2016), Dr Le Si Dang (IN, France); Prof. Kazuhito Hashimoto (NIMS, Japan); Prof. Nguyen Quang Liem (IMS, Vietnam), Nov 2016, Halong City, Vietnam
Communication dans un congrès
hal-01947444v1
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Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States
Communication dans un congrès
hal-01947411v1
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Modelling of interband transitions in GaAs tunnel diodeSemiconductor Science and Technology, 2016, 31 (6), pp.06LT01. ⟨10.1088/0268-1242/31/6/06LT01⟩
Article dans une revue
hal-01857640v1
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Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.1-2
Communication dans un congrès
hal-02052796v1
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Modélisation semiclassique du courant tunnel interbandes dans les jonctions tunnel GaAsJournées Nationales du Photovoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 1p., 2017
Poster de conférence
hal-01780605v1
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Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster)18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
Poster de conférence
hal-01947354v1
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Anisotropic electron g factor as a probe of the electronic structure of GaBi x As 1 − x / GaAs epilayersPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90 (19), ⟨10.1103/PhysRevB.90.195301⟩
Article dans une revue
hal-02050898v2
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Electron spin polarization in GaAsBi quantum wells: Temperature dependence8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany
Communication dans un congrès
hal-01947288v1
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Carrier dynamics in GaAsBi quantum wellsInternational Workshop on Bismuth-Containing Semiconductors, Prof. Shumin Wang, Jul 2016, Shanghai, China
Communication dans un congrès
hal-01947423v1
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Carrier dynamics in GaAsBi quantum wells11th IEEE Nanotechnology Materials and Devices Conference (NMDC), Dr. K. Makasheva; Dr. C. Bonafos, Oct 2016, Toulouse, France
Communication dans un congrès
hal-01947430v1
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Low-loss buried AlGaAs/AlOx waveguides using a quasi-planar processOptics Express, 2017, 25 (16), pp.19275 - 19275. ⟨10.1364/OE.25.019275⟩
Article dans une revue
hal-01611629v1
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Planar technological solutions for emmbedded oxide-based confinement for new VCSELs architecturesEuropean VCSEL Day, May 2014, Rennes, France. pp.1-2
Communication dans un congrès
hal-01857530v1
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Solutions technologiques planaires pour un confinement par oxyde enterré pour de nouvelles architectures VCSELColloque du GdR Nanofils et GdR Pulse, Oct 2014, Toulouse, France
Communication dans un congrès
hal-01857522v1
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Carrier localization and electron spin relaxation dynamics in GaAsBi5th International Workshop on Bismuth-Containing Semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland
Communication dans un congrès
hal-01947332v1
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Fabrication, caractérisation et simulation d’hétérojonctions tunnel et d’un absorbeur à 1eV à base de semiconducteurs III-V pour les cellules solaires multijonctions à haut rendement15eme Journees Nano, Micro et Optoelectronique (JNMO), May 2016, Les Issambres, France. 2016
Poster de conférence
hal-01857637v1
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Jonctions tunnel à très hautes performances à base d'hétérostructures de type II sur GaAs pour les cellules solaires multijonctionJounées Nationales du Photovoltaïque (JNPV 2018), Dec 2018, Dourdan, France. 2018
Poster de conférence
hal-01980237v1
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On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland
Communication dans un congrès
hal-01947318v1
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Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctionsJournal of Physics D: Applied Physics, 2018, 51 (14), pp.145107. ⟨10.1088/1361-6463/aab1de⟩
Article dans une revue
hal-01761772v1
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Thickness limitation of band to band tunneling process in InGaAs/GaAsSb type-II tunnel junctions designed for multijunction solar cellsACS Applied Energy Materials, 2019, 2 (2), pp.1149-1154. ⟨10.1021/acsaem.8b01700⟩
Article dans une revue
hal-01968187v1
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A highly sensitive microsystem based on nanomechanical biosensors for genomics applicationsSensors and Actuators B: Chemical, 2006, 118 (1-2), pp.2-10. ⟨10.1016/j.snb.2006.04.017⟩
Article dans une revue
hal-02565595v1
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In situ measurement of AlAs and GaAs refractive index dispersion at epitaxial growth temperatureApplied Physics Letters, 1995, 67 (2), pp.244-246. ⟨10.1063/1.114681⟩
Article dans une revue
hal-02565622v1
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Free engineering of buried oxide patterns in GaAs/AlAs epitaxial structuresElectronics Letters, 2007, 43 (13), pp.730-732. ⟨10.1049/el:20070974⟩
Article dans une revue
hal-03648414v1
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AlOx/GaAs high contrast grating mirrors for mid infrared VCSELsICTON 2012, Jul 2012, Coventry, United Kingdom. pp.1-3, ⟨10.1109/ICTON.2012.6254396⟩
Communication dans un congrès
hal-00772551v1
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A GaAlAs-GaAs integrated coherence modulatorJournal of Lightwave Technology, 1999, 17 (1), pp.103-107. ⟨10.1109/50.737428⟩
Article dans une revue
hal-01556253v1
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