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Frequency effect on voltage linearity of medium-k dielectrics based RF Metal-Insulator-Metal capacitors

 T. Bertaud , S. Blonkowski , C. Bermond , Corentin Vallée , M. Gros Jean , et al.
Frequency effect on voltage linearity of medium-k dielectrics based RF Metal-Insulator-Metal capacitors, Sep 2009, Athènes, Grèce., France
Communication dans un congrès hal-00602854v1

High Frequency Characterization and Modeling of High Density TSV in 3D Integrated Circuits

 C. Bermond , L. Cadix , A. Farcy , T. Lacrevaz , P. Leduc , et al.
High Frequency Characterization and Modeling of High Density TSV in 3D Integrated Circuits, May 2009, Strasbourg, France
Communication dans un congrès hal-00602841v1

DC to Radio-Frequency Characterization of ZrO2 Dielectric for "Metal-Insulator-Metal" Integrated Capacitors

 T. Bertaud , C. Bermond , S. Blonkowski , Corentin Vallée , T. Lacrevaz , et al.
IEEE Transactions on Components, Packaging and Manufacturing Technology, 2012, 2 (3), pp.502-509
Article dans une revue hal-01025008v1

Ferroelectric properties of PZT thin films until 40 GHz

 Defaÿ E. , Lacrevaz T. , Vo T.T. , Sbrugnera V. , Bermond C. , et al.
Applied Physics Letters, 2009, 94 (5), pp.052901-052901-3
Article dans une revue hal-01075060v1

Quality Factor and Frequency Bandwidth of 2D Self Inductors in 3D Integration Stack

 J. Roullard , S. Capraro , E. Eid , L. Cadix , C. Bermond , et al.
Microelectronic Engineering, 2011, 88 (5), pp.734-738
Article dans une revue hal-01068827v1

Design of a High-Speed Ethernet Connector for Harsh Environments

 Younes Boujmad , Cédric Bermond , Philippe Artillan , Olivier Gavard , Marie Prudhom , et al.
IEEE Transactions on Components, Packaging and Manufacturing Technology, 2020, 10 (10), pp.1684-1692. ⟨10.1109/TCPMT.2020.3022105⟩
Article dans une revue hal-03791928v1

Impact of direct CMP on porous ULK properties and interconnect propagation performance on a wide frequency bandwidth

 M. Gallitre , S. Gall , A. Farcy , B. Blampey , B. Icard , et al.
25th Advanced Metallization Conference, AMC 2008, Sep 2008, -, France
Communication dans un congrès hal-00397928v1

Rise Time Reduction of High Speed Digital Signals on Interconnects of the CMOS 45 nm Node by Optimizing Interconnect Inductance

 S. de Rivaz , T. Lacrevaz , C. Bermond , A. Farcy , B. Fléchet
"Rise Time Reduction of High Speed Digital Signals on Interconnects of the CMOS 45 nm Node by Optimizing Interconnect Inductance, Nov 2009, Belem, Brazil
Communication dans un congrès hal-00602870v1

High Frequency Characterization and Modeling of High Density TSV in 3D Integrated Circuits

 C. Bermond , L. Cadix , A. Farcy , T. Lacrevaz , P. Leduc , et al.
13th IEEE Signal Propagation on Interconnects, May 2009, Grenoble, France
Communication dans un congrès hal-00399076v1

Characterization and Modeling of RF Substrate Coupling Effects due to Vertical Interconnects in 3D Integrated Circuit Stacking

 E. Eid , T. Lacrevaz , C. Bermond , S. de Rivaz , S. Capraro , et al.
IEEE Signal Propagation on Interconnects,, May 2010, Hidelsheim, Germany
Communication dans un congrès hal-00604327v1

Electrical Model of Different Architectures of through Silicon Capacitors for High Frequency Power Distribution Network (PDN) Decoupling Operations

 Khadim Dieng , Cédric Bermond , Philippe Artillan , Olivier Guiller , Thierry Lacrevaz , et al.
2016 IEEE 66th Electronic Components and Technology Conference (ECTC), May 2016, Las Vegas, United States. pp.74-81, ⟨10.1109/ECTC.2016.335⟩
Communication dans un congrès hal-01992682v1
Image document

Méthode de caractérisation large bande de fréquence de matériaux isolants par contact direct « sonde de mesure / échantillon »

 Thierry Lacrevaz , David Auchère , Grégory Houzet , Philippe Artillan , Bernard Flechet , et al.
Journées de Caractérisation Microondes et Matériaux (JCMM), Mar 2018, Paris, France
Communication dans un congrès hal-01939115v1

Some strategic tracks to optimize routing of high speed signal transmission between memory and logic in 3D–IC stacks

 Julie Roullard , Alexis Farcy , Stéphane Capraro , Thierry Lacrevaz , Cédric Bermond , et al.
224th Electrochemical Society Meetings, Oct 2013, San Francisco, United States
Communication dans un congrès hal-01989975v1

Predictive High Frequency Effects of Substrate Coupling in 3D Integrated Circuits Stacking

 E. Eid , T. Lacrevaz , S. de Rivaz , C. Bermond , B. Fléchet , et al.
Predictive High Frequency Effects of Substrate Coupling in 3D Integrated Circuits Stacking, Sep 2009, San Francisco, United States
Communication dans un congrès hal-00602866v1

Wideband frequency and in-situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

 T. Bertaud , C. Bermond , T. Lacrevaz , Corentin Vallée , Y. Morand , et al.
18th Materials for Advanced Metallization Conference, Mar 2009, Grenoble, France
Communication dans un congrès hal-00602814v1

Caractérisation large bande et in-situ de couches minces de ZrO2 et HfO2 intégrées dans des capacités MIM

 T. Bertaud , C. Bermond , T. Lacrevaz , C. Vallee , Y. Morand , et al.
16èmes Journées Nationales Microondes,, May 2009, Grenoble, France
Communication dans un congrès hal-00399525v1

Méthode d'extraction de l'impédance caractéristique d'interconnexions de circuits intégrés avancés et application à la caractérisation des isolants poreux ULK

 J. Roullard , S. Capraro , T. Lacrevaz , M. Gallitre , C. Bermond , et al.
6e Journées Franco-Maghrébines des Microondes et leurs Applications, Mar 2009, Grenoble, France
Communication dans un congrès hal-00399531v1

MmW devices: from WLCSP to smart interposers

 Y. Lamy , O. El Bouayadi , C. Ferrandon , S. Joblot , A. Jouve , et al.
9th IMAPS International Conference and Exhibition on Device Packaging, Mar 2013, Scottsdale, United States. pp.1-4
Communication dans un congrès hal-01021029v1

Caractérisation très large bande des oxydes ZrO2 et TiTaO à permittivité élevée pour la réalisation de capacités MIM RF intégrées

 T. Bertaud , C. Bermond , S. Blonkowski , Antoine Goullet , Corentin Vallée , et al.
JNM'11, May 2011, Brest, France
Communication dans un congrès hal-01073531v1

Extraction entre 40 MHz et 67 GHz de la permittivité complexe du KTa0.65Nb0.3503 déposé en couche mince

 G. Houzet , T. Lacrevaz , C. Bermond , A. Le Febvrier , S. Deputier , et al.
12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S1, papier ID52, 1-4
Communication dans un congrès hal-00806607v1
Image document

Characteristic impedance extraction of embedded and integrated interconnects

 J. Roullard , S. Capraro , T. Lacrevaz , M. Gallitre , C. Bermond , et al.
European Physical Journal: Applied Physics, 2011, 53 (3), ⟨10.1051/epjap/2010100066⟩
Article dans une revue hal-00672782v1

Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm node

 B. Blampey , M. Gallitre , A. Farcy , T. Lacrevaz , S. de Rivaz , et al.
Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm node, Mar 2009, Grenoble, France
Communication dans un congrès hal-00602820v1

Optimization of a Miniaturized Ethernet 10 Gbits/s 8 Conductors Interconnect for Harsh Environments

 Younes Boujmad , Cédric Bermond , Philippe Artillan , B. Fléchet , Farsin Khalili , et al.
2019 IEEE 23rd Workshop on Signal and Power Integrity (SPI), Jun 2019, Chambery, France
Communication dans un congrès hal-02179019v1

High frequency modeling of Through Silicon Capacitors (TSC) architectures in silicon interposer

 Khadim Dieng , Cédric Bermond , Philippe Artillan , Olivier Guiller , Thierry Lacrevaz , et al.
2016 IEEE 20th Workshop on Signal and Power Integrity (SPI), May 2016, Turin, Italy. pp.1-4, ⟨10.1109/SaPIW.2016.7496285⟩
Communication dans un congrès hal-01992951v1

Wideband frequency and in-situ characterization of Aluminum Nitride (AlN) in a Metal/Insulator/Metal (MIM) configuration

 T. Bertaud , E. Defay , C. Bermond , T. Lacrevaz , J. Abergel , et al.
Materials for Advanced Metallization, Mar 2010, Mechelen, Belgium
Communication dans un congrès hal-00604324v1

Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm node

 B. Blampey , M. Gallitre , A. Farcy , T. Lacrevaz , S. de Rivaz , et al.
18th Materials for Advanced Metallization Conf.,, Mar 2009, Grenoble, France
Communication dans un congrès hal-00399048v1

Capacités MIM accordables pour circuits intégrés et caractérisation HF du SrTiO3

 T.T. Vo , C. Bermond , T. Lacrevaz , T. Bertaud , S. Capraro , et al.
10èmes Journées de Caractérisation Microondes et Matériaux, Apr 2008, France, France
Communication dans un congrès hal-00398487v1

RF characterization of substrate coupling between TSV and MOS transistors in 3D integrated circuits

 M. Brocard , C. Bermond , T. Lacrevaz , A. Farcy , P. Le Maître , et al.
IEEE Int. Conf. on 3D System Integration (3DIC), Oct 2013, San Francisco, United States. pp.1-8
Communication dans un congrès hal-01018442v1

Performance predictions of interconnect networks for advanced technology nodes

 M. Gallitre , A. Farcy , B. Blampey , C. Bermond , B. Fléchet , et al.
Microelectronic Engineering, 2010, 87 (issue 3), pp.321-323
Article dans une revue hal-01073576v1

Lateral Field Excitation of thickness shear modes in an AlN membrane

 M. Gorisse , T. Bertaud , A. Reinhardt , M. Borel , C. Billard , et al.
IEEE International Frequency Control Symposium and European Frequency and Time Forum (IFCS 2011),, May 2011, San Francisco, United States
Communication dans un congrès hal-01068868v1
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