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Journal articles65 documents

  • Mohamed Hadj Alouane, Olfa Nasr, Hammadi Khmissi, Bouraoui Ilahi, Gilles Patriarche, et al.. Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate. Journal of Luminescence, Elsevier, 2021, 231, pp.117814. ⟨10.1016/j.jlumin.2020.117814⟩. ⟨hal-03040324⟩
  • Maher Ezzedini, Tarek Hidouri, Mohamed Helmi Hadj Alouane, Amor Sayari, Elsayed Shalaan, et al.. Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency. Nanoscale Research Letters, SpringerOpen, 2017, 12 (1), ⟨10.1186/s11671-017-2218-2⟩. ⟨hal-01735294⟩
  • O. Nasr, Nicolas Chauvin, H. Hadj Alouane M, H. Maaref, C. Bru-Chevallier, et al.. Carrier dynamics of strain-engineered InAs quantum dots with (In)GaAs surrounding material. Journal of Optics, Institute of Physics (IOP), 2017, 19, pp.025401. ⟨10.1088/2040-8986/aa52d6⟩. ⟨hal-01701515⟩
  • Bouraoui Ilahi, Olfa Nasr, Bernard Paquette, H. Hadj Alouane, Nicolas Chauvin, et al.. Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing. Journal of Alloys and Compounds, Elsevier, 2016, 656, pp.132-137. ⟨10.1016/j.jallcom.2015.09.231⟩. ⟨hal-01918155⟩
  • Roman Anufriev, Jean-Baptiste Barakat, G. Patriarche, Xavier Letartre, C. Bru-Chevallier, et al.. Optical polarization properties of InAs/InP quantum dot and quantum rod nanowires. Nanotechnology, Institute of Physics, 2015, 26, pp.395701. ⟨10.1088/0957-4484/26/39/395701⟩. ⟨hal-01489428⟩
  • R. Khelifi, H. Mazari, S. Mansouri, Z. Benamara, M. Mostefaoui, et al.. Characterization and modeling of Schottky diodes based on bulk GaN unintentionally doped. Sensors & Transducers Journal, International Frequency Sensor Association (IFSA), 2014, 27, pp.217. ⟨hal-01149661⟩
  • Roman Anufriev, Nicolas Chauvin, Hammadi Khmissi, Khalid Naji, G. Patriarche, et al.. Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate.. Applied Physics Letters, American Institute of Physics, 2014, 104, pp.183101. ⟨10.1063/1.4875276⟩. ⟨hal-01489881⟩
  • N. Benyahya, H. Mazari, N. Benseddik, Z. Benamara, M. Mostefaoui, et al.. Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN. Optical and Quantum Electronics, Springer Verlag, 2014, 46 (1), pp.209 - 219. ⟨10.1007/s11082-013-9747-4⟩. ⟨hal-01901693⟩
  • M H Hadj Alouane, Nicolas Chauvin, H Khmissi, K Naji, B Ilahi, et al.. Excitonic properties of wurtzite InP nanowires grown on silicon substrate. Nanotechnology, Institute of Physics, 2013, 24 (3), ⟨10.1088/0957-4484/24/3/035704⟩. ⟨hal-01734647⟩
  • Maher Ezzdini, Bilel Azeza, Saoussen Rekaya, Mohamed Helmi Hadj Alouane, Larbi Sfaxi, et al.. Optimisation of the physical properties of InAs/InGaAs/GaAs QDs heterostructures embedded p-i-n GaAs solar cell. International Journal of Nanotechnology, Inderscience, 2013, 10 (5/6/7), ⟨10.1504/IJNT.2013.053514⟩. ⟨hal-01735303⟩
  • Roman Anufriev, Nicolas Chauvin, H. Khmissi, K. Naji, J.B. Barakat, et al.. Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths. Journal of Applied Physics, American Institute of Physics, 2013, 113 (19), ⟨10.1063/1.4804327⟩. ⟨hal-01735112⟩
  • Nicolas Chauvin, M. Hadj Alouane, R. Anufriev, H. Khmissi, K. Naji, et al.. Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates. Applied Physics Letters, American Institute of Physics, 2012, 100 (1), ⟨10.1063/1.3674985⟩. ⟨hal-01735186⟩
  • H. Khmissi, K. Naji, M. H. Hadj Alouane, Nicolas Chauvin, C. Bru-Chevallier, et al.. InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates. Journal of Crystal Growth, Elsevier, 2012, 344 (1), pp.45 - 50. ⟨10.1016/j.jcrysgro.2012.01.038⟩. ⟨hal-01735120⟩
  • Roman Anufriev, Nicolas Chauvin, Hammadi Khmissi, Khalid Naji, Michel Gendry, et al.. Impact of substrate-induced strain and surface effects on the optical properties of InP nanowires. Applied Physics Letters, American Institute of Physics, 2012, 101 (7), ⟨10.1063/1.4745608⟩. ⟨hal-01735117⟩
  • H. Chouaib, C. Bru-Chevallier. Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics. Applied Physics Letters, American Institute of Physics, 2012, 100 (17), ⟨10.1063/1.4705408⟩. ⟨hal-01901728⟩
  • C. Bru-Chevallier, A. El Akra, David Pelloux-Gervais, H. Dumont, B. Canut, et al.. InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates. Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2011, 11 (10), pp.9153-9159. ⟨10.1166/jnn.2011.4282⟩. ⟨hal-01735321⟩
  • C. Bru-Chevallier, L. Bouzaïene, L. Sfaxi, M. Baira, H. Maaref. Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots. Journal of Nanoparticle Research, Springer Verlag, 2011, 13 (1), pp.257 - 262. ⟨10.1007/s11051-010-0024-1⟩. ⟨hal-01731927⟩
  • M Hadj Alouane, R. Anufriev, Nicolas Chauvin, H Khmissi, K. Naji, et al.. Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate. Nanotechnology, Institute of Physics, 2011, 22 (40), ⟨10.1088/0957-4484/22/40/405702⟩. ⟨hal-01735193⟩
  • W. Chikhaoui, J.-M. Bluet, M.-A. Poisson, N. Sarazin, C. Dua, et al.. Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage. Applied Physics Letters, American Institute of Physics, 2010, 96 (7), ⟨10.1063/1.3326079⟩. ⟨hal-01901750⟩
  • H. Khmissi, L. Sfaxi, L. Bouzaïene, F. Saidi, H. Maaref, et al.. Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction. Journal of Applied Physics, American Institute of Physics, 2010, 107 (7), ⟨10.1063/1.3371356⟩. ⟨hal-01901770⟩
  • J Munguía, J-M Bluet, H Chouaib, G Bremond, Michel Mermoux, et al.. Strain dependence of the direct energy bandgap in thin silicon on insulator layers. Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (25), pp.255401. ⟨10.1088/0022-3727/43/25/255401⟩. ⟨hal-00569631⟩
  • J. Munguía, J.M. Bluet, H. Chouaib, G. Bremond, C. Bru-Chevallier. UV photoreflectance spectroscopy in strained silicon on insulator structures. physica status solidi (a), Wiley, 2009, 206, pp.821. ⟨hal-01902071⟩
  • M. Baira, L. Bouzaïene, L. Sfaxi, H. Maaref, O. Marty, et al.. Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots. Journal of Applied Physics, American Institute of Physics, 2009, 105 (9), ⟨10.1063/1.3122003⟩. ⟨hal-01902104⟩
  • H. Chouaib, C. Bru-Chevallier, A. Apostoluk, W. Rudno-Ruzinski, J. L. Pelouard, et al.. Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP. physica status solidi (a), Wiley, 2009, 206, pp.786. ⟨hal-01902088⟩
  • W. Chikhaoui, J.M. Bluet, Pascal Girard, G. Bremond, C. Bru-Chevallier, et al.. Deep levels investigation of AlGaN/GaN heterostructure transistors. Physica B: Condensed Matter, Elsevier, 2009, 404 (23-24), pp.4877 - 4879. ⟨10.1016/j.physb.2009.08.231⟩. ⟨hal-01901823⟩
  • J. Cheng, T. Aviles, A. El Akra, C. Bru-Chevallier, L. Largeau, et al.. Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001). Applied Physics Letters, American Institute of Physics, 2009, 95 (23), ⟨10.1063/1.3273850⟩. ⟨hal-01901801⟩
  • N. Malbert, A. Curutchet, C. Sury, V. Hoel, J.C. de Jaeger, et al.. Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. Microelectronics Reliability, Elsevier, 2009. ⟨hal-00401267⟩
  • N. Malbert, N. Labat, A. Curutchet, C. Sury, V. Hoel, et al.. Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. Microelectronics Reliability, Elsevier, 2009, 49, pp.1216-1221. ⟨10.1016/j.microrel.2009.07.015⟩. ⟨hal-00473638⟩
  • M. Baira, L. Sfaxi, L. Bouzaïene, H. Maaref, Nicolas Chauvin, et al.. Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule. Journal of Applied Physics, American Institute of Physics, 2008, 104 (6), ⟨10.1063/1.2968238⟩. ⟨hal-01902111⟩
  • V. Lysenko, V. Onyskevych, O. Marty, V. Skryshevsky, Y. Chevolot, et al.. Extraction of ultraviolet emitting silicon species from strongly hydrogenated nanoporous silicon. Applied Physics Letters, American Institute of Physics, 2008, 92 (25), ⟨10.1063/1.2948955⟩. ⟨hal-01902208⟩
  • S. Rekaya, L. Sfaxi, L. Bouzaïene, H. Maaref, C. Bru-Chevallier. Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates. Materials Science and Engineering: C, Elsevier, 2008, 38, pp.906-909. ⟨hal-01902217⟩
  • Houssam Chouaib, C. Bru-Chevallier, Aleksandra Apostoluk, Wojciech Rudno-Rudzinski, Melania Lijadi, et al.. Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates. Applied Physics Letters, American Institute of Physics, 2008, 93 (4), ⟨10.1063/1.2959829⟩. ⟨hal-01902121⟩
  • Houssam Chouaib, C. Bru-Chevallier. Microphotoreflectance spectroscopy of heterojunction bipolar transistors under biasing voltage: Measurement of the net doping concentration. Applied Physics Letters, American Institute of Physics, 2007, 90 (26), ⟨10.1063/1.2751591⟩. ⟨hal-01902222⟩
  • Nicolas Chauvin, G. Bremond, C. Bru-Chevallier, E. Dupuy, P. Regreny, et al.. Shape and size effects on multi-exciton complexes in single InAs quantum dots grown on InP(001) substrate. physica status solidi (c), Wiley, 2006, 3 (11), pp.3912 - 3915. ⟨10.1002/pssc.200671615⟩. ⟨hal-01902472⟩
  • E. Dupuy, P. Regreny, Y. Robach, M. Gendry, Nicolas Chauvin, et al.. Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001). Applied Physics Letters, American Institute of Physics, 2006, 89 (12), ⟨10.1063/1.2354010⟩. ⟨hal-01902435⟩
  • H. Chouaib, Nicolas Chauvin, C. Bru-Chevallier, C. Monat, P. Regreny, et al.. Photoreflectance spectroscopy of self-organized InAs/InP(001) quantum sticks emitting at 1.55μm. Applied Surface Science, Elsevier, 2006, 253 (1), pp.90 - 94. ⟨10.1016/j.apsusc.2006.05.081⟩. ⟨hal-01902530⟩
  • G. Saint-Girons, Nicolas Chauvin, A. Michon, G. Patriarche, G. Beaudoin, et al.. Microphotoluminescence of exciton and biexciton around 1.5μm from a single InAs∕InP(001) quantum dot. Applied Physics Letters, American Institute of Physics, 2006, 88 (13), ⟨10.1063/1.2185008⟩. ⟨hal-01902486⟩
  • Nicolas Chauvin, E. Tranvouez, G. Bremond, G. Guillot, C. Bru-Chevallier, et al.. Neutral and charged multi-exciton complexes in single InAs quantum dots grown on InP(001). Nanotechnology, Institute of Physics, 2006, 17 (8), pp.1831-1834. ⟨10.1088/0957-4484/17/8/004⟩. ⟨hal-01902515⟩
  • Nicolas Chauvin, B. Salem, G. Bremond, G. Guillot, C. Bru-Chevallier, et al.. Size and shape effects on excitons and biexcitons in single InAs∕InP quantum dots. Journal of Applied Physics, American Institute of Physics, 2006, 100 (7), ⟨10.1063/1.2353896⟩. ⟨hal-01902442⟩
  • B. Ilahi, L. Sfaxi, E. Tranvouez, G. Bremond, M. Baira, et al.. Toward long wavelength low density InAs/GaAs quantum dots. Physics Letters A, Elsevier, 2006, 357, pp.360. ⟨hal-01902366⟩
  • Nicolas Chauvin, M. Baira, C. Bru-Chevallier, B. Ilahi, L. Sfaxi, et al.. Optical characterisation of single InAs quantum dots on GaAs substrate emitting at 1.3 μm. physica status solidi (c), Wiley, 2006, 3 (11), pp.3672 - 3675. ⟨10.1002/pssc.200671614⟩. ⟨hal-01902477⟩
  • C. Bru-Chevallier, H. Chouaib, A. Bakouboula, Taha Benyattou. Photoreflectance study at the micrometer scale. Applied Surface Science, Elsevier, 2006, 253 (1), pp.194 - 199. ⟨10.1016/j.apsusc.2006.05.085⟩. ⟨hal-01902537⟩
  • J. Munguía, H. Chouaib, J. de La Torre, G. Bremond, C. Bru-Chevallier, et al.. Optical strain measurement in ultrathin sSOI wafers.. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253, pp.18. ⟨10.1016/j.nimb.2006.10.007⟩. ⟨hal-01902421⟩
  • Charles Cornet, Andrei Schliwa, Manus Hayne, Nicolas Chauvin, François Doré, et al.. InAs/InP quantum dots: from single to coupled dots applications. physica status solidi (c), Wiley, 2006, 3 (11), pp.4039. ⟨10.1002/pssc.200671623⟩. ⟨hal-00491717⟩
  • Nicolas Chauvin, B. Salem, G. Bremond, C. Bru-Chevallier, G. Guillot, et al.. Photoluminescence studies of stacked InAs/InP quantum sticks. Journal of Crystal Growth, Elsevier, 2005, 275 (1-2), pp.e2327-e2331. ⟨10.1016/j.jcrysgro.2004.11.372⟩. ⟨hal-01976042⟩
  • Nicolas Chauvin, Bassem Salem, C. Bru-Chevallier, T. Benyatou, Gérard Guillot, et al.. Micro-photoluminescence study of single self-organized InAs/InP quantum sticks. Materials Science and Engineering: C, Elsevier, 2005, 25, pp.650-653. ⟨10.1016/j.msec.2005.06.023⟩. ⟨hal-01975987⟩
  • V. Celibert, Erwan Tranvouez, G. Guillot, C. Bru-Chevallier, L. Grenouillet, et al.. MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3μm in single and stacked layers. Journal of Crystal Growth, Elsevier, 2005, 275 (1-2), pp.e2313-e2319. ⟨10.1016/j.jcrysgro.2004.11.370⟩. ⟨hal-01976052⟩
  • C. Bru-Chevallier, S. Fanget, A. Philippe. Photoreflectance on wide bandgap nitride semiconductors. physica status solidi (a), Wiley, 2005, 202 (7), pp.1292-1299. ⟨hal-01975909⟩
  • Houssam Chouaib, C. Bru-Chevallier, G. Guillot, H. Lahreche, P. Bove. Photoreflectance study of GaAsSb∕InP heterostructures. Journal of Applied Physics, American Institute of Physics, 2005, 98 (12), pp.123524. ⟨hal-01975903⟩
  • Michel Gendry, Christelle Monat, J. Brault, P. Regreny, G. Hollinger, et al.. From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001). Journal of Applied Physics, American Institute of Physics, 2004, 95 (9), pp.4761-4766. ⟨hal-01976064⟩
  • C. Bru-Chevallier, Houssam Chouaib, J. Arcamone, Taha Benyattou, H. Lahreche, et al.. Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors. Thin Solid Films, Elsevier, 2004, 450 (1), pp.151-154. ⟨hal-01976075⟩
  • P. Miska, J. Even, C. Platz, B. Salem, T. Benyattou, et al.. Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001). Journal of Applied Physics, American Institute of Physics, 2004, 95 (3), pp.1074-1080. ⟨10.1063/1.1638890⟩. ⟨hal-01976127⟩
  • B. Salem, G. Bremond, T. Benyattou, C. Bru-Chevallier, G. Guillot, et al.. Evidence of excited levels in self-organized InAs/InP(001) islands with low size dispersion. Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2003, 17, pp.124-126. ⟨10.1016/S1386-9477(02)00742-7⟩. ⟨hal-02090522⟩
  • C. Adelmann, E. Sarigiannidou, D. Jalabert, Y. Hori, J.-L. Rouvière, et al.. Growth and optical properties of GaN/AlN quantum wells. Applied Physics Letters, American Institute of Physics, 2003, 82 (23), pp.4154-4156. ⟨10.1063/1.1581386⟩. ⟨hal-01975920⟩
  • B. Salem, T. Benyattou, G. Guillot, C. Bru-Chevallier, G. Bremond, et al.. Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001). Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2002, 66 (19), ⟨10.1103/PhysRevB.66.193305⟩. ⟨hal-02165341⟩
  • Laurent Auvray, H. Dumont, J. Dazord, Y. Monteil, Jean Bouix, et al.. AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE. Journal of Crystal Growth, Elsevier, 2000, 221, pp.475-480. ⟨hal-01118274⟩
  • Laurent Auvray, H. Dumont, J. Dazord, Y. Monteil, Jean Bouix, et al.. MOVPE growth of GaAsN : surface study by AFM and optical properties. Materials Science in Semiconductor Processing, Elsevier, 2000, 3, pp.505-509. ⟨hal-01118272⟩
  • L. Grenouillet, C. Bru-Chevallier, G. Guillot, P. Gilet, P. Duvaut, et al.. Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well. Applied Physics Letters, American Institute of Physics, 2000, 76 (16), pp.2241 - 2243. ⟨10.1063/1.126308⟩. ⟨hal-01928830⟩
  • P. Dollfus, C. Bru, P. Hesto. Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length. Journal of Applied Physics, American Institute of Physics, 1993, 73 (2), pp.804-812. ⟨hal-01977076⟩
  • Stéphane Monéger, Americo Tabata, C. Bru-Chevallier, G. Guillot, A. Georgakilas, et al.. Room‐temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates. Applied Physics Letters, American Institute of Physics, 1993, 63 (12), pp.1654-1656. ⟨hal-01977121⟩
  • Pierre Dansas, Daniel Pascal, C. Bru-Chevallier, S. Laval, L. Giraudet, et al.. Interfacial traps in Ga 0.47 In 0.53 As/InP heterostructures. Journal of Applied Physics, American Institute of Physics, 1990, 67 (3), pp.1384-1388. ⟨hal-01977062⟩
  • Daniel Pascal, Pierre Dansas, C. Bru-Chevallier, Suzanne Laval. Accurate analytical determination of the resistance of a semiconducting layer between two coplanar electrodes. Semiconductor Science and Technology, IOP Publishing, 1989, 4, pp.633-638. ⟨hal-01977042⟩
  • P. Dansas, M. Bouchemat, C. Bru-Chevallier, Daniel Pascal, Suzanne Laval. Evidence for acceptor surface states in GaAs planar-type devices. Solid-State Electronics, Elsevier, 1988, 31, pp.1327-1333. ⟨hal-01977025⟩
  • D. Pascal, P. Dansas, C. Bru, S. Laval. MESFET GaAs à grille interrompue. Analyse du fonctionnement pour la photo-détection. Revue de Physique Appliquee, 1987, 22 (8), pp.931-934. ⟨10.1051/rphysap:01987002208093100⟩. ⟨jpa-00245634⟩
  • C. Bru-Chevallier, Patrice de Carné, P. Dansas, Daniel Pascal, Michel Rousseau, et al.. Surface space charge effects in planar submicrometer GaAs and InP devices. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 1987, ED34 (8), pp.1611-1616. ⟨hal-01977000⟩

Conference papers13 documents

  • Roman Anufriev, Jean-Baptiste Barakat, G. Patriarche, Xavier Letartre, Philippe Regreny, et al.. Optical anisotropy in single InAs/InP quantum dot and quantum rod nanowires. Nanowires 2015, 2015, Barcelone, Spain. ⟨hal-01489572⟩
  • Nicolas Chauvin, Roman Anufriev, H. Hadj Alouane M, Jean-Baptiste Barakat, Hammadi Khmissi, et al.. Photoluminescence properties of Inas/InP quantum rod-nanowires grown on silicon substrate. 5th International Conference on Nanostructures SElf-Assembly, 2014, Marseille, France. ⟨hal-01490315⟩
  • O. Nasr, H. Hadj Alouane M, Nicolas Chauvin, H. Maaref, F. Hassen, et al.. Optical characterization of wavelength tunable InAs QDs with (In)GaAs surrounding material. 5th International Conference on Nanostructures SElf-Assembly, 2014, Marseille, France. ⟨hal-01489844⟩
  • Nicolas Chauvin, Roman Anufriev, Jean-Baptiste Barakat, G. Patriarche, Michel Gendry, et al.. Impact of the 1D nature of InP based nanowires on their optical properties. 4th Korean-German-French workshops on Nanophotonics,, 2014, Gangneung, South Korea. ⟨hal-01490276⟩
  • Hervé Dumont, Jean-Baptiste Barakat, Djawhar Ferrah, Geneviève Grenet, Philippe Regreny, et al.. Control of In droplets for self-catalyzed growth of InP nanowires by VLS-MBE on silicon substrates. CSW 2014, 2014, Montpellier, France. ⟨hal-01489939⟩
  • N. Malbert, C. Sury, A. Curutchet, N. Labat, C. Dua, et al.. Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs. 5th Space Agency-MOD Round Table Workshop on GaN Component Technologies, 2010, Netherlands. pp.84-87. ⟨hal-00549998⟩
  • Y. Douvry, V. Hoel, J.C. de Jaeger, N. Defrance, Nathalie Malbert, et al.. Degradations during pulsed measurements in temperature of AlGaN/GaN HEMTs. European Solid-State Device Research Conference 2010, Sep 2010, Séville, Spain. pp.1. ⟨hal-00585101⟩
  • Y. Douvry, V. Hoel, J.C. de Jaeger, N. Defrance, N. Malbert, et al.. Temperature dependent degradation modes in AlGaN/GaN HEMTs. 5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.114-117. ⟨hal-00550022⟩
  • N. Malbert, N. Labat, A. Curutchet, C. Sury, V. Hoel, et al.. Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs. IEEE International Reliability Physics Symposium, IRPS 2010, 2010, United States. pp.139-145, ⟨10.1109/IRPS.2010.5488839⟩. ⟨hal-00550009⟩
  • N. Malbert, A. Curutchet, N. Labat, C. Sury, C. Dua, et al.. Characterisation and modeling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. ESA/MOD Workshop on GaN Microwave Component Technologies, 2009, Germany. pp.139-153. ⟨hal-00474460⟩
  • Houssam Chouaib, C. Bru-Chevallier, Aleksandra Apostoluk, Wojciech Rudno-Rudzinski, Jean-Luc Pelouard, et al.. Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast Heterojunction Bipolar Transistors on InP. 3rd International Workshop on Modulation Spectroscopy of Semiconductor Structures, Jul 2008, Wroclaw, Poland. ⟨hal-01997321⟩
  • Nicolas Chauvin, E. Dupuy, R. Djondang, M. Gendry, G. Bremond, et al.. Influence of shape and size of InAs/InP(001) quantum islands grown by SSMBE on the microphotoluminescence emission in the 1.5µm spectral range. International Workshop on Long Wavelength Quantum Dots : Growth and Applications (LWQD), Jul 2007, Rennes, France. pp.1. ⟨hal-00491794⟩
  • C. Bru-Chevallier, S. Fanget, G. Guillot, Sandra Ruffenach, Olivier Briot. UV photoreflectance for wide band gap nitride characterization. Symposium on Optical and X-Ray Metrology for Advanced Device Materials Characterization, Jun 2003, Strasbourg (FRANCE), France. pp.75-78. ⟨hal-00540433⟩

Poster communications6 documents

  • R. Anufriev, J.-B Barakat, G. Patriarche, X. Letartre, P. Regreny, et al.. Optical anisotropy in single InAs/InP quantum dot and quantum rod nanowires. Journées Boîtes Quantiques, Jun 2015, Grenoble, France. ⟨hal-02071858⟩
  • Jean-Baptiste Barakat, R. Anufriev, H. Dumont, P. Regreny, Nicolas Chauvin, et al.. Self-catalyzed InP nanowires grown by VLS-MBE on silicon for photonics. MRS Spring Meeting, Apr 2014, San-Francisco, United States. ⟨hal-02071838⟩
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  • Aleksandra Apostoluk, C. Bru-Chevallier, Houssam Chouaib, Melania Lijadi, Philippe Bove. Spectroscopic studies for the characterisation of the heterojunction bipolar transitors. 12th meeting of the Nano-, Micro- and Optoelectronics, (12ièmes Journées Nano-, Micro- et Optoélectronique, JNMO), Jun 2008, Ile d'Oléron, France. ⟨hal-01997349⟩
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